Neste trabalho iniciou-se os estudos com transistores de tunelamento por efeito de campo (TFET) de silício (Si) em estruturas de nanofios (NW-TFET), analisando o efeito da redução do diâmetro dos nanofios, de 167 nm até 15 nm, através de analises baseadas em medidas experimentais e simulações numéricas. Para diâmetros maiores que 30 nm, os dispositivos são pouco influenciados pela redução do diâmetro. Para diâmetros menores que 30 nm, ao diminui-los, o tunelamento entre bandas (BTBT) passa a ser o mecanismo dominante, aumentando a corrente de dreno normalizada. Reduzindo o diâmetro em baixa condução, a maior parte da junção passa a ser dominada por BTBT, aumentando a eficiência devido ao melhor acoplamento eletrostático, reduzindo a inclinação de sublimiar (SS). A análise em diferentes temperaturas (de 10 K a 423 K) destes TFETs de estruturas de nanofios mostrou que o aumento da temperatura aumentou tanto a corrente de estado ligado (ION) quanto a de estado desligado (IOFF), sendo que o aumento de IOFF é responsável pela degradação da eficiência em baixa condução. Para melhorar o desempenho dos dispositivos TFET de Si, que possuem baixa corrente, foram utilizados dispositivos experimentais com fontes de Germânio (Ge) e de uma liga de Si e Ge (Si0,73Ge0,27). O aumento da concentração de Ge na fonte reduz a largura da banda proibida (EG), resultando em um aumento da corrente de BTBT nos dispositivos. Esse aumento da corrente de BTBT também aumenta a transcondutância (gm) e o ganho intrínseco de tensão (AV). Para melhorar ainda mais o desempenho dos TFETs, foram estudados novos dispositivos fabricado com Arseneto de Indio-Galio (InXGa1-XAs), com leiaute em anel, com comprimento de canal de 5 µm e largura de canal de 400 µm, utilizando dispositivos experimentais e simulados. O uso desse material gera um grande aumento de ION devido ao aumento considerável de BTBT, alcançando valores de SS próximos a 60mV/dec, valor muito menor que 200mV/dec obtido nos dispositivos de Si. Os dispositivos com InXGa1-XAs apresentaram alto AV (~50 dB) mesmo em baixas polarizações, sendo promissores em aplicações de baixa tensão e baixa potência. Aumento da concentração de In (In0,7Ga0,3As) reduz EG, aumentando BTBT. O aumento de BTBT aumenta gm, porém, aumenta também a condutância de saída (gD), aumentando AV para alto VGS e reduzindo para baixos VGS. A redução da espessura de HfO2, de 3nm para 2nm, resultou em melhoria em todos os dispositivos devido ao melhor acoplamento eletrostático, onde o dispositivo de In0,53Ga0,47As apresentou um SS de 56mV/dec. A temperatura influencia mais gD que gm, aumentando AV em baixas temperaturas. O uso de fonte gasosa na difusão de Zinco (Zn), no lugar de fonte sólida, resultou em uma junção mais abrupta, aumentando ION e melhorando SS. Pode-se obter um dispositivo otimizado utilizando In0,7Ga0,3As utilizando difusão de Zn na fonte por fase gasosa, para dispositivos que vão atuar em aplicações digitais, ou utilizando difusão de Zn na fonte por fonte sólida, para dispositivos que vão atuar em aplicações analógicas, ambos à 520ºC por 1 minuto, utilizando 2 nm de HfO2 na porta. / In this work, initially it was studied Silicon (Si) n type tunnel field effects transistors (TFET) in nanowire structures (NW-TFET), analyzing the diameter reduction effect of the nanowires, from 167 nm to 15 nm, using experimental measurements and numerical simulations. For diameters higher than 30 nm, the devices are less influenced by the diameter reduction. For diameters lower than 30 nm, decreasing the diameter, band-to-band tunneling (BTBT) start to become the dominant mechanism, increasing the normalized drain current. Reducing the diameter, in low conduction, the most of the junction becomes dominated by BTBT, increasing the transistor efficiency due to the better electrostatic coupling, reducing the subthreshold swing (SS). The analysis of this nTFETs at different temperatures (from 10 K to 423 K) showed that at high temperatures both the on and the off state current (ION and IOFF) of these NW-TFETs have raised, degrading SS, and consequently the efficiency at low conduction. In order to improve ION, which is very low in pure Si nTFETs, experimental devices using source made by Ge and Si0.73Ge0.27 was studied. The increase of the Ge concentration in the source reduces the bandgap results in higher BTBT current. This high BTBT current also lead the transconductance (gm) and the intrinsic voltage gain (AV) to increase. To further improve the TFETs performance, new devices made of InGaAs with ring layout, with channel length of 5 µm and channel width of 400 µm was studied, using experimental and simulated data. The use of InGaAs generates a large increase of ION due to its low bandgap, enabling to reach values of SS near 60 mV/dec, much steeper than the 200mV/dec obtained on Si nTFETs. These InGaAs nTFETs have presented high AV (~50 dB), even at low bias, being promising devices in low power low voltage applications. When increasing the In concentration in the InXGa1-XAs TFET the bandgap is reduced, improving the BTBT current. The BTBT raise leads both gm and the output conductance (gD) to increase, improving AV for high VGS bias and degrading it at low VGS bias. The reduction of the HfO2 thickness, from 3 nm to 2 nm, have resulted in improvement all devices due to the better electrostatic coupling, where the In0.53Ga0.47As device have presented SS of 56mV/dec. As the temperature have more influence in gD than gm, AV is improved at low temperatures. The use of gas phase Zn diffusion at the source doping, instead of solid source Zn diffusion, have increased ION and improved SS. The possibly reason to this behavior is the higher abruptness of the source/channel junction when using gas phase Zn diffusion. An optimized device can be obtained using a device with In0,7Ga0,3As with the source diffusion made by gas phase, for devices to be used in digital applications, or with the source diffusion made by solid source, for devices to be used in analog applications. Both diffusion process made at 520 ºC, using 2 nm of HfO2 in the gate stack.

Neste trabalho iniciou-se os estudos com transistores de tunelamento por efeito de campo (TFET) de silício (Si) em estruturas de nanofios (NW-TFET), analisando o efeito da redução do diâmetro dos nanofios, de 167 nm até 15 nm, através de analises baseadas em medidas experimentais e simulações numéricas. Para diâmetros maiores que 30 nm, os dispositivos são pouco influenciados pela redução do diâmetro. Para diâmetros menores que 30 nm, ao diminui-los, o tunelamento entre bandas (BTBT) passa a ser o mecanismo dominante, aumentando a corrente de dreno normalizada. Reduzindo o diâmetro em baixa condução, a maior parte da junção passa a ser dominada por BTBT, aumentando a eficiência devido ao melhor acoplamento eletrostático, reduzindo a inclinação de sublimiar (SS). A análise em diferentes temperaturas (de 10 K a 423 K) destes TFETs de estruturas de nanofios mostrou que o aumento da temperatura aumentou tanto a corrente de estado ligado (ION) quanto a de estado desligado (IOFF), sendo que o aumento de IOFF é responsável pela degradação da eficiência em baixa condução. Para melhorar o desempenho dos dispositivos TFET de Si, que possuem baixa corrente, foram utilizados dispositivos experimentais com fontes de Germânio (Ge) e de uma liga de Si e Ge (Si0,73Ge0,27). O aumento da concentração de Ge na fonte reduz a largura da banda proibida (EG), resultando em um aumento da corrente de BTBT nos dispositivos. Esse aumento da corrente de BTBT também aumenta a transcondutância (gm) e o ganho intrínseco de tensão (AV). Para melhorar ainda mais o desempenho dos TFETs, foram estudados novos dispositivos fabricado com Arseneto de Indio-Galio (InXGa1-XAs), com leiaute em anel, com comprimento de canal de 5 µm e largura de canal de 400 µm, utilizando dispositivos experimentais e simulados. O uso desse material gera um grande aumento de ION devido ao aumento considerável de BTBT, alcançando valores de SS próximos a 60mV/dec, valor muito menor que 200mV/dec obtido nos dispositivos de Si. Os dispositivos com InXGa1-XAs apresentaram alto AV (~50 dB) mesmo em baixas polarizações, sendo promissores em aplicações de baixa tensão e baixa potência. Aumento da concentração de In (In0,7Ga0,3As) reduz EG, aumentando BTBT. O aumento de BTBT aumenta gm, porém, aumenta também a condutância de saída (gD), aumentando AV para alto VGS e reduzindo para baixos VGS. A redução da espessura de HfO2, de 3nm para 2nm, resultou em melhoria em todos os dispositivos devido ao melhor acoplamento eletrostático, onde o dispositivo de In0,53Ga0,47As apresentou um SS de 56mV/dec. A temperatura influencia mais gD que gm, aumentando AV em baixas temperaturas. O uso de fonte gasosa na difusão de Zinco (Zn), no lugar de fonte sólida, resultou em uma junção mais abrupta, aumentando ION e melhorando SS. Pode-se obter um dispositivo otimizado utilizando In0,7Ga0,3As utilizando difusão de Zn na fonte por fase gasosa, para dispositivos que vão atuar em aplicações digitais, ou utilizando difusão de Zn na fonte por fonte sólida, para dispositivos que vão atuar em aplicações analógicas, ambos à 520ºC por 1 minuto, utilizando 2 nm de HfO2 na porta. / In this work, initially it was studied Silicon (Si) n type tunnel field effects transistors (TFET) in nanowire structures (NW-TFET), analyzing the diameter reduction effect of the nanowires, from 167 nm to 15 nm, using experimental measurements and numerical simulations. For diameters higher than 30 nm, the devices are less influenced by the diameter reduction. For diameters lower than 30 nm, decreasing the diameter, band-to-band tunneling (BTBT) start to become the dominant mechanism, increasing the normalized drain current. Reducing the diameter, in low conduction, the most of the junction becomes dominated by BTBT, increasing the transistor efficiency due to the better electrostatic coupling, reducing the subthreshold swing (SS). The analysis of this nTFETs at different temperatures (from 10 K to 423 K) showed that at high temperatures both the on and the off state current (ION and IOFF) of these NW-TFETs have raised, degrading SS, and consequently the efficiency at low conduction. In order to improve ION, which is very low in pure Si nTFETs, experimental devices using source made by Ge and Si0.73Ge0.27 was studied. The increase of the Ge concentration in the source reduces the bandgap results in higher BTBT current. This high BTBT current also lead the transconductance (gm) and the intrinsic voltage gain (AV) to increase. To further improve the TFETs performance, new devices made of InGaAs with ring layout, with channel length of 5 µm and channel width of 400 µm was studied, using experimental and simulated data. The use of InGaAs generates a large increase of ION due to its low bandgap, enabling to reach values of SS near 60 mV/dec, much steeper than the 200mV/dec obtained on Si nTFETs. These InGaAs nTFETs have presented high AV (~50 dB), even at low bias, being promising devices in low power low voltage applications. When increasing the In concentration in the InXGa1-XAs TFET the bandgap is reduced, improving the BTBT current. The BTBT raise leads both gm and the output conductance (gD) to increase, improving AV for high VGS bias and degrading it at low VGS bias. The reduction of the HfO2 thickness, from 3 nm to 2 nm, have resulted in improvement all devices due to the better electrostatic coupling, where the In0.53Ga0.47As device have presented SS of 56mV/dec. As the temperature have more influence in gD than gm, AV is improved at low temperatures. The use of gas phase Zn diffusion at the source doping, instead of solid source Zn diffusion, have increased ION and improved SS. The possibly reason to this behavior is the higher abruptness of the source/channel junction when using gas phase Zn diffusion. An optimized device can be obtained using a device with In0,7Ga0,3As with the source diffusion made by gas phase, for devices to be used in digital applications, or with the source diffusion made by solid source, for devices to be used in analog applications. Both diffusion process made at 520 ºC, using 2 nm of HfO2 in the gate stack.

O presente trabalho foi conduzido com o objetivo de avaliar a nutrição da Urochloa brizantha (Syn. Brachiaria brizantha) cv. Marandu para P, Mg e S através do desenvolvimento das plantas, sintomas visuais e índices espectrais das bandas do visível. Os experimentos foram conduzidos em casa de vegetação localizada no campus da FZEA/USP. As plantas foram cultivadas em solução nutritiva, onde foram fornecidas as seguintes doses de P, Mg e S: 6%, 20%, 100% e 200% do recomendado, em blocos casualizados. As imagens digitais de scanner das folhas diagnósticas foram processadas e classificadas utilizando MATLAB® R2012b com pacote de ferramentas para processamento de imagens. Foram utilizados vetores de características baseados nas bandas do visível, sendo calculados os seguintes índices: excesso de verde; vermelho normalizado; verde normalizado; e razão verde-vermelho. Na classificação foi utilizado classificador bayesiano. As doses de P, Mg e S causaram aumento significativo (P<0,05) no acúmulo de massa seca da parte aérea (MSPA) e nos teores foliares dos nutrientes dosados. As doses de P, S e Mg promoveram manifestações dos sintomas de deficiência característicos que se traduzem em modificações no perfil de coloração das folhas. A Porcentagem de Acerto Global (PAG) e o índice Kappa atingiram valores acima de 80% e 0,81, respectivamente, sendo consideradas classificações excelentes. As melhores classificações foram obtidas quando se utilizou mais de um índice como vetor de característica. Índices espectrais do verde e do vermelho são bons descritores do status da nutrição do P, Mg e S no capim-marandu. / The present study was conducted to assess the nutrition of Urochloa brizantha (SYN. Brachiaria brizantha) CV. Marandu to P, Mg and S through the development of plants, Visual symptoms and spectral indices of the visible bands. The experiments were conducted in a greenhouse located on the campus of the FZEA/USP. The plants were grown in nutrient solution, where they were provided the following doses of P, Mg, and S: 6%, 20%, 100% and 200% of the recommended, in randomized blocks. The digital images from scanner diagnostic sheets were processed and classified using MATLAB ® R2012b with package of tools for processing images. Characteristic vectors were used based on bands of the visible, being calculated the following indexes: excess Green; standard red; standardised Green; Red-Green ratio. The classification has been used Bayesian classifier. The doses of P, Mg, and S have caused significant increase (P < 0.05) in acúmul shoot dry mass (MSPA) and foliar nutrient levels dosed. The doses of P, S and Mg promoted demonstrations of characteristic deficiency symptoms that result in changes in the profile of colouring of leaves. The Global hit Percentage (PAG) and the Kappa index reached values above 80%, and 0.81, respectively, being considered excellent ratings. The best ratings were obtained when using more than one index as a feature vector. Spectral indices of green and Red are good descriptors of the nutrition status of P, Mg and S marandu grass.

O presente trabalho foi conduzido com o objetivo de avaliar a nutrição da Urochloa brizantha (Syn. Brachiaria brizantha) cv. Marandu para P, Mg e S através do desenvolvimento das plantas, sintomas visuais e índices espectrais das bandas do visível. Os experimentos foram conduzidos em casa de vegetação localizada no campus da FZEA/USP. As plantas foram cultivadas em solução nutritiva, onde foram fornecidas as seguintes doses de P, Mg e S: 6%, 20%, 100% e 200% do recomendado, em blocos casualizados. As imagens digitais de scanner das folhas diagnósticas foram processadas e classificadas utilizando MATLAB® R2012b com pacote de ferramentas para processamento de imagens. Foram utilizados vetores de características baseados nas bandas do visível, sendo calculados os seguintes índices: excesso de verde; vermelho normalizado; verde normalizado; e razão verde-vermelho. Na classificação foi utilizado classificador bayesiano. As doses de P, Mg e S causaram aumento significativo (P<0,05) no acúmulo de massa seca da parte aérea (MSPA) e nos teores foliares dos nutrientes dosados. As doses de P, S e Mg promoveram manifestações dos sintomas de deficiência característicos que se traduzem em modificações no perfil de coloração das folhas. A Porcentagem de Acerto Global (PAG) e o índice Kappa atingiram valores acima de 80% e 0,81, respectivamente, sendo consideradas classificações excelentes. As melhores classificações foram obtidas quando se utilizou mais de um índice como vetor de característica. Índices espectrais do verde e do vermelho são bons descritores do status da nutrição do P, Mg e S no capim-marandu. / The present study was conducted to assess the nutrition of Urochloa brizantha (SYN. Brachiaria brizantha) CV. Marandu to P, Mg and S through the development of plants, Visual symptoms and spectral indices of the visible bands. The experiments were conducted in a greenhouse located on the campus of the FZEA/USP. The plants were grown in nutrient solution, where they were provided the following doses of P, Mg, and S: 6%, 20%, 100% and 200% of the recommended, in randomized blocks. The digital images from scanner diagnostic sheets were processed and classified using MATLAB ® R2012b with package of tools for processing images. Characteristic vectors were used based on bands of the visible, being calculated the following indexes: excess Green; standard red; standardised Green; Red-Green ratio. The classification has been used Bayesian classifier. The doses of P, Mg, and S have caused significant increase (P < 0.05) in acúmul shoot dry mass (MSPA) and foliar nutrient levels dosed. The doses of P, S and Mg promoted demonstrations of characteristic deficiency symptoms that result in changes in the profile of colouring of leaves. The Global hit Percentage (PAG) and the Kappa index reached values above 80%, and 0.81, respectively, being considered excellent ratings. The best ratings were obtained when using more than one index as a feature vector. Spectral indices of green and Red are good descriptors of the nutrition status of P, Mg and S marandu grass.

Lake Pleasant, a work for wind ensemble, receives its title from the composer’s memories of visiting a cottage on a small lake that straddles the border of Indiana and Michigan. The primary influence of the piece derives from the howling sound produced by the echoes of traffic noise one hears while standing on the opposite side of the lake in the quiet of night. The recollection of this soundscape takes the musical form of nine clarinets spread throughout the audience accompanied by pairs of flutes, oboes, saxophones, trumpets, and a single piccolo. While the placement of performers in the audience allows for the music to emulate the atmosphere evoked by the work’s influence through the use of physical space and timbral similarities, the spacial relationships explored through the music also serve as primary structural elements.

This thesis provides a historical account of the career of Miles “Mity” Johnson. Johnson taught music for thirty-seven years at St. Olaf College in Northfield, Minnesota. During those years, he led the St. Olaf Band to national and international prominence. Johnson’s professional influences traverse his work as a collegiate band director, and horn recitalist and teacher, as well as his contributions to professional development for conductors and the adult community band movement. This research draws heavily on archival materials from the Shaw-Olson Center for College History at St. Olaf College along with several personal collections, including Johnson’s own private collection. Oral interviews with family members, colleagues, and former students supplemented archival materials. Johnson’s career spanned the second half of the twentieth century, a period that witnessed important growth in repertoire, professional development, and other areas in the concert band field, and this thesis highlights his reactions and contributions to those changes. Chapters explore Johnson’s family, education, and military background; followed by details of his public school and St. Olaf College teaching career. Examining the areas of domestic and international touring, concert programming, and horn teaching during Johnson’s tenure at St. Olaf reveals significant contributions to the band field. Also included are Johnson’s numerous guest conducting engagements at All-State band performances and the Vestfold Summer music camp in Norway. Research on Johnson’s establishment of the Minnesota Instrumental Conducting Symposium (MICS) and the Minnesota Symphonic Winds (MSW) adult community band, give further insight into Johnson’s broader contributions to the wind band profession.

John Mackey’s Wine-Dark Sea: Symphony for Band(2014) is a work of epic proportions and was the winner of the William D. Revelli Composition Contest of the National Band Association in 2015. Wine-Dark Sea: Symphony for Bandhas received much acclaim and many performances including a recording by the University of Texas Wind Ensemble in 2016. The purposes of this dissertation are 1) to provide historical information on the genesis of the work through interviews with its composer, John Mackey, and commissioning director, Jerry Junkin; 2) to provide an analysis of how the programmatic elements of Homer’s Odysseyinteract with the musical aspects of the work. The first chapter discusses biographical information essential to the understanding of John Mackey’s music. Chapter two includes information specific to the creation of Wine-Dark Sea: Symphony for Band. Chapters three through five provide analytical information alongside programmatic information to provide a clear understanding of how the music and programmatic elements combine to create the work. Chapter six concludes the document with some performance suggestions for the conductor. An appendix of information including graphs of how dynamic range corresponds to programmatic elements and interviews with the composer, John Mackey, and the commissioner, Jerry Junkin, are also provided.

This dissertation addresses the design of monolithically integrated phase shifters at S- and L- frequency bands using a commercially available GaAs process from Triquint. The focus of the design is to operate over a wide bandwidth with full 360° phase shift capability, 50 Ω input/output impedance match and low RMS phase and gain errors. The first version of the design is based on passive all-pass phase shifters integrated with wideband amplifiers to compensate for insertion loss. This design uses a 4-bit system to achieve the required phase shift and each bit consists of 3 sections of all-pass filters designed at separate frequencies within the 0.8 – 3 GHz band. Simulation results show a complete 360° phase shift with RMS gain error of less than 0.6 dB and RMS phase error of less than 2.5°. The system is also shown to achieve good input and output impedance matching characteristics. However, the fabricated prototype fails to perform with full functionality due to the excessive number of passive inductors in the design and the resulting mutual coupling. The mutual coupling issue could be solved by spacing out the layout to allow more separation among the inductors. Unfortunately, in the S- and L-bands, this is not an option for this research work as the fabricated design already uses the maximum allowed chip size as determined by the foundry. In addition, larger chip sizes considerably increase the cost in practical applications. To address the challenging needs of small size, wide bandwidth and low frequency applicability, the second design introduced in this dissertation proposes a novel phase shifter implementation that utilizes tunable active differential inductors within all-pass networks. The inductor tuning is used to achieve phase shifts up to 180⁰. A switchable active balanced to unbalanced transition circuit (balun) is included in front of the all-pass network to complement its phase shift capability by another 180°. In addition, the all-pass network is followed by a variable gain amplifier (VGA) to correct for gain variations among the phase shifting states and act as an output buffer. Although active inductors have been previously used in the design of various components, to the best of our knowledge, this is the first time that they have been used in an all-pass phase shifter. The approach is demonstrated with an on-chip design and implementation exhibiting wideband performance for S and L band applications by utilizing the 0.5 µm TriQuint pHEMT GaAs MMIC process. Specifically, the presented phase shifter exhibits 1 × 3.95 mm2 die area and operates within the 1.5 GHz to 3 GHz band (i.e. 2:1 bandwidth) with 10 dB gain, less than 1.5 dB RMS gain error and less than 9° RMS phase error. Comparison with the state-of-the-art MMIC phase shifters operating in S and L bands demonstrates that the presented phase shifter exhibits a remarkable bandwidth performance from a very compact footprint with low power consumption. Consequently, it presents an important alternative for implementation of wideband phase shifters where all-passive implementations will consume expensive die real estate.

This dissertation presents a new technique for miniaturization of printed RF circuits and antennas. The technique is based on lumped circuit elements and volumetric reactive pin loadings. The vertical arrangement of the pins is shown to provide a meandered current path within the device volume enhancing the miniaturization achieved with sole application of lumped circuit components. The technique is applied for antenna and filter size reduction. In antenna applications, it is shown that due to the presence of the reactive pin loading the overall size of a printed antenna can be miniaturized without affecting the radiation efficiency performance. One of the major advantages of this approach over the existing miniaturization techniques is that it allows reducing the overall size of the antenna (i.e. the substrate size) in addition to its metallization footprint area. Specifically, three antenna designs are presented for GPS and ISM applications. Firstly, a miniaturized wide-band CDL antenna has been introduced. The antenna consists of two loops which are loaded with lumped inductors and coupling capacitors. The design is shown to exhibits 49% smaller footprint size as compared to a traditional patch antenna without degrading the bandwidth performance. Secondly, a circular polarized compact dual-band CDL GPS antenna loaded with lumped capacitors and vertical pins is shown. The antenna operates with >50% lesser area as compared to a traditional L2 patch antenna without degrading its radiation performance. Thirdly, a patch antenna with its cavity loaded with CSRRs is presented. The novelty of the design is that it provides circularly symmetric arrangement of CSRRs thereby enabling the antenna to exhibit circular polarization (CP). Apart from CSRR, further size reduction is obtained by simultaneously reducing the substrate size and ground plane metallization around the CSRRs and loading it with pins. The antenna is 44% smaller than a traditional patch antenna without causing degradation in the antenna's radiation efficiency performance. To extend the volumetric loading to filter applications, the last chapter of the dissertation presents a detailed analysis to understand how geometrical factors (e.g. periodicity, radius, width of the host transmission line, etc) affect the miniaturization performance and quality factor. As a design example, a 2GHz pin loaded hairline filter with 17% -3dB |S21| bandwidth and 1.5dB insertion loss is demonstrated. The footprint size of the filter is ~λ0/16×λ0/9 @ 2GHz and is 45% smaller than its traditional counterpart.

Wireless networks increasingly utilize diverse spectral bands, which exhibit vast differences in transmission range, bandwidth and available airtime. While tremendous efforts have been devoted to enable efficient mobile access of single-band networks and increase their throughput, e.g., via network coding, such single-band solutions are unfortunately oblivious to the diversity and abundance of the available spectral bands. In this thesis, I present and evaluate novel schemes for mobile access and for throughput increase using network coding, schemes that are designed for diverse-band wireless networks, i.e., networks operating in multiple diverse bands. Specifically, I introduce the first scheme designed for mobile clients to evaluate and select both APs and spectral bands in diverse-band networks. The fundamental problem is that the potentially vast number of spectrum and AP options may render scanning prohibitive. Thus, my key technique is for clients to infer the critical metrics of channel quality and available airtime for their current location and bands using limited measurements collected in other bands and at other locations. I evaluate my scheme via experiments and emulations, which are enabled by a four-band testbed that I deploy. A key finding is that under a diverse set of operating conditions, mobile clients can accurately predict their performance without a direct measurement at their current location and spectral bands. Moreover, I introduce the first band selection schemes designed for diverse-band networks exploiting overheard packets to enable network coding. The main problem is that band selections in such networks are challenged by conflicting factors affecting throughput: while the number of overhearing nodes generally increases with decreasing frequency, channel width and spatial reuse unfortunately decrease. Thus, the key technique of the proposed schemes is to jointly incorporate coding gains, channel width and spatial reuse in band selections. I evaluate these schemes via simulations employing a physical-layer model driven by measurements collected using the deployed four-band testbed. An important finding is that the proposed schemes can outperform coding-oblivious spectrum access in terms of throughput, as their band selection enables more coding opportunities. My work has two key implications. First, it can significantly improve throughput performance in networks enabled by today’s unlicensed spectrum and by the billion-dollar industry of white-space networking. Second, I anticipate that this thesis will highly impact future research, as I open new research areas in a domain that has attracted such tremendous commercial and research interest.