The demands of consumer electronic products to support multi-functionality such as computing, communication and multimedia applications with reduced form factor and low cost is the driving force behind packaging technologies such as System on Package (SOP). SOP aims to enhance the functionality of the package while providing form factor reduction by the integration of active and passive components. However, embedding components within mixed signal packages causes unwanted interferences across the digital and analog-radio frequency (RF) sections of the package, which is a major challenge yet to be addressed. This dissertation focused on the chip-last method of embedding chips within cavities in organic packages and addressed the challenges for preserving power integrity in such packages. The challenges associated with electromagnetic coupling in packages when chips are embedded within the substrate layers are identified, analyzed and demonstrated. The presence of the chip embedded within the package introduces new interaction mechanisms between the chip and package that have not been encountered in conventional packages with surface mounted chips. It is of significant importance to understand the chip-package interaction mechanisms, for ensuring satisfactory design of systems with embedded actives. The influence of the electromagnetic coupling from the package on the bulk substrate and bond-pads of the embedded chip are demonstrated. Solutions that remedy the noise coupling using Electromagnetic Band-Gap structures (EBGs) along with design methodologies for their efficient implementation in multilayer packages are proposed. This dissertation presents guidelines for designing efficient power distribution networks in multilayer packages with embedded chips.

This thesis is centred around the study materials with novel electronic properties, including transition metals interacting with semiconductors and unique molecular systems. The idea of advancing modern computing is the basis for motivating the work in that the projects all have potential to be used in novel applications that would impact the efficiency and/or execution of current technology. We have studied two variations of transition metals as they appear in materials and two molecular systems. As for the transition metals interacting with semiconductors, we first discuss transition metal atoms introduced as impurities to a semiconductor lattice, and second, we discuss transition metal oxides that are naturally semiconducting. We have used a number of experimental and theoretical techniques to better understand these groups of materials. Materials prepared through high quality synthesis techniques were studied using x-ray spectroscopy made possible by synchrotron light sources. Computational software then allowed for the experiments to be interpreted by comparing them to the simulations. In the study of transition metals as impurities, we chose the Co:MoS2 system because MoS2 has had promising results with other transition metal dopants. We examined the electronic structure for two purposes: (1) to determine the local bonding environment and locations of the cobalt atoms in order to better understand the behaviour of Co as an impurity; and (2) the overall band gap of the system so that we could evaluate the system’s potential for use in applications. Experimental results combined with our theoretical simulations led us to conclude that the samples available were all metallic, and at low concentrations cobalt atoms were able to substitute directly into the MoS2 lattice. An examination of copper (II) oxide allowed us to investigate the ability to tune the band gap of a known semiconductor through a synthesis process that applied axial pressure to the sample. For a collection of samples prepared at different pressures, x-ray spectroscopy methods showed an increasing band gap with increasing synthesis pressure, a result that is most encouraging for the field of band gap engineering. Using soft x-ray spectroscopy to examine the conduction and valence bands of the two molecular systems, the potassium-doped hydrocarbons and Li2RuO3, was important for drawing conclusions about the materials’ composition and behaviour. Results showed the introduction of new states at the lower edge of the conduction band of K:phenanthrene, a possible reason for its low-temperature superconductivity. Li2RuO3’s electronic structure was examined and compared to calculations performed by collaborators.

The main objective of this research is to design, model and implement several antenna geometries using electromagnetic band gap (EBG) material and a defected ground plane. Several antenna applications are addressed with the aim of improving performance, particularly the mutual coupling between the elements. The EBG structures have the unique capability to prevent or assist the propagation of electromagnetic waves in a specific band of frequencies, and have been incorporated here in antenna structures to improve patterns and reduce mutual coupling in multielement arrays. A neutralization technique and defected ground plane structures have also been investigated as alternative approaches, and may be more practical in real applications. A new Uni-planar Compact EBG (UC-EBG) formed from a compact unit cell was presented, giving a stop band in the 2.4 GHz WLAN range. Dual band forms of the neutralization and defected ground plane techniques have also been developed and measured. The recorded results for all antenna configurations show good improvement in terms of the mutual coupling effect. The MIMO antenna performance with EBG, neutralization and defected ground of several wireless communication applications were analysed and evaluated. The correlation coefficient, total active reflection coefficient (TARC), channel capacity and capacity loss of the array antenna were computed and the results compared to measurements with good agreement. In addition, a computational method combining Genetic Algorithm (GA) with surface meshing code for the analysis of a 2×2 antenna arrays on EBG was developed. Here the impedance matrix resulting from the meshing analysis is manipulated by the GA process in order to find the optimal antenna and EBG operated at 2.4 GHz with the goal of targeting a specific fitness function. Furthermore, an investigation of GA on 2×2 printed slot on DGS was also done.

This thesis introduces efficient numerical techniques for the analysis of novel electromagnetic metamaterials. The modelling is based on a Method of Moments modal analysis in conjunction with an interpolation scheme, which significantly accelerates the computations. Triangular basis functions are used that allow for modelling of arbitrary shaped metallic elements. Unlike the conventional methods, impedance interpolation is applied to derive the dispersion characteristics of planar periodic structures. With these techniques, the plane wave and the surface wave responses of fractal structures have been studied by means of transmission coefficients and dispersion diagrams. The multiband properties and the compactness of the proposed structures are presented. Based on this method, novel planar left-handed metamaterials are also proposed. Verifications of the left-handedness are presented by means of full wave simulation of finite planar arrays using commercial software and lab measurement. The structures are simple, readily scalable to higher frequencies and compatible with low-cost fabrication techniques.

With increase in frequency and convergence toward mixed signal systems, supplying stable voltages to integrated circuits and blocking noise coupling in the systems are major problems. Electromagnetic band gap (EBG) structures have been in the limelight for power/ground noise isolation in mixed signal applications due to their capability to suppress unwanted electromagnetic mode transmission in certain frequency bands. The EBG structures have proven effective in isolating the power/ground noise in systems that use a common power supply. However, while the EBG structures have the potential to present many advantages in noise suppression applications, there is no method in the prior art that enables reliable and efficient synthesis of these EBG structures. Therefore, in this research, a novel EBG synthesis method for mixed signal applications is presented. For one-dimensional periodic structures, three new approaches such as current path approximation method, border to border radius, power loss method have been introduced and combined for synthesis. For two-dimensional EBG structures, a novel EBG synthesis method using genetic algorithm (GA) has been presented. In this method, genetic algorithm (GA) is utilized as a solution-searching technique. Synthesis procedure has been automated by combining GA with multilayer finite-difference method and dispersion diagram analysis method. As a real application for EBG structures, EBG structures have been applied to a GHz ADC load board design for power/ground noise suppression.

The recent application of semiconductor materials, such as GaN, to power electronics has led to the development of a new generation of devices, which promise lower losses, higher operating frequencies and reductions in equipment size. The aim of this research is to study the capabilities of emerging GaN power devices, to understand their advantages, drawbacks, the challenges of their implementation and their potential impact on the performance of power converters. The thesis starts by presenting the development of a simple model for the switching transients of a GaN cascode device under inductive load conditions. The model enables accurate predictions to be made of the switching losses and provides an understanding of the switching process and associated energy flows within the device. The model predictions are validated through experimental measurements. The model reveals the suitability of the cascode device to soft-switching converter topologies. Two GaN cascode transistors are characterised through experimental measurement of their switching parameters (switching speed and switching loss). The study confirms the limited effect of the driver voltage and gate resistance on the turn-off switching process of a cascode device. The performance of the GaN cascode devices is compared against state-of-the-art super junction Si transistors. The results confirm the feasibility of applying the GaN cascode devices in half and full-bridge circuits. Finally, GaN cascode transistors are used to implement a 270V - 28V, 1.5kW, 1 MHz phase-shifted full-bridge isolated converter demonstrating the use of the devices in soft-switching converters. Compared with a 100 kHz silicon counterpart, the magnetic component weight is reduced by 69% whilst achieving a similar efficiency of 91%.

Un-doped, Er3+ doped (TiO2:Er3+) as well as Er3+/Yb3+ co-doped (TiO2:Er3+/Yb3+) nanocrystals with different concentrations of RE3+ (Er3+, Yb3+) were successfully synthesized using the sol-gel method. The powder X-ray diffraction (XRD) spectra revealed that all undoped and doped samples remained in anatase after annealing at 400°C. The presence of RE3+ ions in the TiO2 host lattice was confirmed by conducting elemental mapping on the samples using Scanning electron microscope (SEM) equipped with energy dispersive X-ray spectrometer (EDX), which was in agreement with X-ray photoelectron spectroscopy (XPS) results. Transmission electron microscope (TEM) images approximated particle sizes of the samples to be between 1.5 – 3.5 nm in diameter and this compares well with XRD analyses. Phonon quantification in TiO2 was achieved using Fourier transform infrared (FT-IR) spectroscopy. Optical bandgap from Ultraviolet/Visible/Near-Infrared was extrapolated from Kubelka-Munk relation and the narrowing of the bandgap for the doped samples as compared to the undoped sample was observed. The photoluminescence PL study of the samples revealed two emission peaks attributed to direct band-gap and defect-related emissions. A laser beam with 980 nm wavelength was used to irradiate the samples, and the displayed emission lines of the TiO2: Er3+ in the visible region of the electromagnetic spectrum confirmed up-conversion luminescence. Enhancement of up-conversion luminescence intensity due to Yb3+ co-doping was observed, indicating an efficient energy transfer process from the sensitizer Yb3+ to the activator Er3+. / Physics / M. Sc. (Physics)

Les convertisseurs à base de Si atteignent leurs limites. Face à ces besoins, le GaN, avec sa vitesse de saturation des électrons et le champ électrique de claquage élevés est candidat idéal pour réaliser des redresseurs, surtout s’il est épitaxié sur substrat à bas cout. Ce travail est dédié au développement des diodes Schottky sur AlGaN/GaN. Une couche de SiNx en faible traction a été obtenue. Un contact ohmique de Ti/Al avec une gravure partiel a donné une Rc de 2.8 Ω.mm avec une résistance Rsh de 480 Ω/□. Des diodes Schottky avec les étapes issues de ces études ont été fabriqué. La diode recuite à 400 °C avec 30 nm de profondeur de gravure a montré une hauteur de barrière de 0,82 eV et un facteur d'idéalité de 1,49. La diode a présenté une très faible densité de courant de fuite de 8.45x10-8 A.mm-1 à -400 V avec une tension de claquage entre 480 V et 750 V. / Si-based devices for power conversion applications are reaching their limits. Wide band gap GaN is particularly interesting due to the high electron saturation velocity and high breakdown electric field, especially when epitaxied on low cost substrates such as Si. This work was dedicated to the development and fabrication of the Schottky diode on AlGaN/GaN on Si. SiNx passivation in very low tensile strain is used. Ti (70 nm)/Al (180 nm) partially recessed ohmic contacts annealed at 800 ºC exhibited a 2.8 Ω.mm Rc with a sheet resistance of 480 Ω/sq. Schottky diodes with the previously cited passivation and ohmic contact were fabricated with a fully recessed Schottky contact annealed at 400 ºC. A Schottky barrier height of 0.82 eV and an ideality factor of 1.49 were obtained. These diodes also exhibited a very low leakage current density (up to -400 V) of 8.45x10-8 A.mm-1. The breakdown voltage varied between 480 V and 750 V.

Le nitrure de gallium (GaN) et ses alliages ternaires et quaternaires suscitent de plus en plus d’intérêt dans les communautés scientifiques et industrielles pour leur potentiel d’utilisation dans des dispositifs électroniques haute fréquence, dans les transistors à forte mobilité électroniques, dans la photo-détection UV et les cellules solaires de nouvelles générations. L’aboutissement de ces nouveaux composants reste entravé à l’heure actuelle, entre autre, par la non maîtrise des techniques d’établissement de contacts électriques. C’est dans ce cadre général que s’inscrivent les travaux de cette thèse. Même si l’objectif principal de cette thèse concerne l’étude des défauts électriquement actifs dans les alliages de semiconducteurs à grand gap B(AlGa)N et de leur rôle dans les propriétés de transport, la réalisation des contacts ohmiques et des contacts Schottky constitue une étape essentielle dans la réalisation des dispositifs à étudier. Pour les contacts ohmiques, nous avons déposé des couches de type Ti/Al/Ti/Au (15/200/15/200) par évaporation thermique. Des résistances spécifiques des contacts de l’ordre de 3x10-4Wcm2 ont été déterminées par les méthodes des TLM linéaires et confirmées par les TLM circulaires. Une modélisation théorique a été entreprise dans ce sens pour analyser les mesures expérimentales. Ensuite on a réalisé des diodes Schottky en déposant des contacts métalliques de Platine (Pt) d’épaisseur 150 nm. Des facteurs d’idéalité de 1.3 et une hauteur de barrière de 0.76 eV ont été obtenus et d’une manière reproductible. Une fois ces dispositifs réalisés, une étude des mécanismes de transport a été entreprise et nous a permis de mettre en évidence l’existence des effets tunnel direct et assisté par le champ, en plus de l’effet thermoïonique classique. Ceci a été mis en évidence par des mesures de courant et de capacité en fonction de la température. Pour les photodétecteurs, nous avons réalisés les mêmes mesures de courant et de capacité à l’obscurité et sous illumination à des longueurs d’ondes adaptées. Ces mesures nous ont permis de comprendre les phénomènes de gain qu’on a observés sur ces échantillons et aussi de mettre en évidence des mécanismes thermiquement actifs, dont les énergies d’activation ont été déterminées par la technique de l’Arrhenius. L’étude des défauts électriquement actifs a été menée par la technique transitoire de capacité de niveaux profonds, la (DLTS). Cette technique a été récemment mise en oeuvre au laboratoire et nous a permis d’effectuer des mesures sous différentes conditions incluant diverses polarisations de repos, différentes fréquences, et différentes hauteurs et largeurs d’impulsion de polarisation. Un des résultats importants est la possibilité de caractérisation à la fois des pièges à majoritaires et des pièges à minoritaire en changeant simplement les conditions de polarisation et contrairement aux procédures habituelles où une excitation optique supplémentaire est souvent nécessaire pour augmenter la concentration des porteurs minoritaires. Il a ainsi été mis en évidence, en accord avec la plupart des résultats de la littérature, l’existence de 6 pièges à électrons, tous situés en dessous de 0.9 eV de la bande de conduction, de trois pièges à trous dans l’intervalle 0.6 - 0 .7 eV au dessus de la bande de valence et un piège à trous distribué à l’interface. Une procédure rigoureuse de fit a été mise au point et a permis de confirmer nos résultats obtenus par la procédure classique de l’Arrhenius / Gallium nitride (GaN) and its ternary and quaternary alloys are attracting more and more interest in the scientific and industrial communities for their potential for use in high frequency electronic devices, for transistors with high electronic mobility, for UV photo-detection and new-generation solar cells. The outcome of these new components is still be seen to be limited in many areas, mainly due to the lack of control of electrical contacts implementation techniques. It is in this context that this thesis takes place.Although the main objective of this thesis deals with the study of the electrically active defects in high band gap B(AlGa)N semiconductor alloys and their role in the transport properties, the production of ohmic and Schottky contacts is an essential step in the realization of the devices under study. For the Ohmic contacts, we have deposited Ti/Al/Ti/Au (15/200/15/200) layers by thermal evaporation. Using the Transfer Length Method (TLM), we obtained specific contact resistances in the order of 3x10-4Wcm2. The Circular TLM has also confirmed this result. Besides, a theoretical modelling has been carried out to analyse the experimental measurements. Schottky diodes were then produced by depositing 150 nm platinum (Pt) metal contacts. An ideality factor of 1.3 and a barrier height of 0.76 eV were obtained. On the other hand, a study of transport mechanisms has been performed. It allowed us to demonstrate the existence of the direct tunnelling and the Thermionic Field Emission, in addition to the conventional thermionic effect. This result was underpinned by current and capacity measurements as a function of temperature. For photo detectors, we performed the same measurements of current and capacity in darkness and under illumination at suitable wavelengths. These measurements allowed understanding the internal gain that was observed on the samples. Furthermore, they show the effect of the thermally active mechanisms whose activation energies were determined by the Arrhenius technique. Using the Deep-Level Transient Spectroscopy (DLTS) technique followed up the study of the electrically active defects. This technique has recently been implemented in the laboratory. It allowed us to perform measurements under different conditions including various reverse bias, different frequencies, and different voltage pulse amplitudes and durations. One of the important results is the possibility of characterizing both majority and minority traps by simply changing the polarization conditions, as opposed to the usual procedures where an additional optical excitation is often necessary to increase the concentration of the minority carriers. In accordance with most of the encountered literature results, we found 6 electron traps all located below 0.9 eV of the conduction band, 3 hole traps in the 0.6-0.7 eV range above the valence band and one hole trap distributed at the interface. A rigorous procedure was developed and confirmed our results obtained by the standard Arrhenius technique

Dans cette thèse, nous nous sommes intéressés aux propriétés semi-conductrices des oxydes formés sur les alliages base nickel en milieu primaire des REP. L'objectif étant de mettre en évidence les effets de la pression partielle en hydrogène, de la nature de l'alliage et de l'état de surface sur les types de semi-conductions et les énergies de bandes interdites. La technique photoélectrochimique a été employée pour caractériser ces propriétés semi-conductrices. D'autres techniques de caractérisation complémentaires ont été également utilisées telles que le MEB-FEG, la diffraction des rayons X, la spectroscopie Raman et l'XPS. Les essais de corrosion ont été effectués en milieu primaire simulé (autoclave en titane, température 325°C, durée 500 heures). Des échantillons d'alliages 600 et 690 de polissage 1 µm diamant, ont été oxydés aux P(H2) < 0,01 ; 0,3 et 6,5 bar. L'état de surface ne concernait que l'alliage 600 oxydé à P(H2) = 0,3 bar. Nous avons utilisé une nouvelle méthode d'ajustement numérique pour la détermination des gaps. Les résultats obtenus montrent que seule la pression d'hydrogène affecte le type de semi-conduction des oxydes présentés par les hautes énergies, il passe du type-n (P(H2) < 0,01) en type proche de l'isolant (P(H2) = 0,3 et 6,5 bar). Un comportement du type-n a été enregistré à basse énergie quels que soit les paramètres d'étude. Les énergies de bande interdites des oxydes NiO, Cr2O3 et NiFe2O4 ont été révélées. / In this thesis, we are interested in semiconducting properties of oxides formed on nickel base alloys. The aim is to demonstrate the effects of hydrogen partial pressure, the nature of the alloy and the surface conditions on the semi-conduction type and the band gap energies. Photoelectrochemical technique was used to characterize the semiconducting properties. Other complementary techniques were also used such as FEG-SEM, X-ray diffraction, Raman spectroscopy and XPS. Corrosion tests were performed in simulated primary medium (titanium autoclave, temperature 325°C, duration 500 hours). Samples of alloys 600 and 690 of 1 µm diamond polishing were oxidized at P(H2) < 0,01 ; 0,3 et 6,5 bar. The surface conditions concerned only the alloy 600 oxidized at P(H2) = 0,3 bar. We used a new method for fitting energy spectra to obtain the band gap energies. The obtained results show that only the hydrogen pressure affects the semiconducting type of oxides presented by the high energies, it shift from n-type (P(H2) < 0,01 bar) to insulating type (P(H2) = 0,3 and 6,5 bar). An n-type behavior was recorded at low energy whatever the study parameters. Band gaps energies of NiO, Cr2O3 and NiFe2O4 were revealed.