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At the heart of all power electronic systems lies the semiconductor, responsible for passing large amounts of current at negligible power losses in the on-state, while instantaneously switching to withstand high voltages in the off-state. For decades silicon (Si) has dominated nearly all aspects of electronic systems including power. As importunity for efficiency at higher power and fast switching speeds grows, the environments with which these systems are being tasked to operate in has also increased in rigor. This has placed semiconductors at the forefront of innovation as novel materials are being explored in hopes of meeting the demands for the future of power electronics. This exploration of novel materials for power electronics has come to fruition as the performance limits of narrow bandgap (EG) materials such as Si (1.1 eV) have been reached. The EG is a key measure of a materials ability to operate at high voltages and within high temperature environments. This is due to the direct relationship of the EG to the critical field strength which enables increased performance beyond that of narrow band gap materials such as Si and gallium arsenide. Wide bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) with EG 3.3 eV and 3.4 eV, respectively, have emerged within the power electronics field to offer increased breakdown voltages (VBR) at lower on-resistances. However, ultrawide bandgap (UWBG) devices possess greater potential with superior performance limits in comparison to SiC and GaN. Ga2O3 (4.8 eV) is the only UWBG semiconductor with melt-growth capabilities that has already demonstrated research grade wafers up to 6" in diameter. Ga2O3 is also advantaged by the ability to grow thick, lowly-doped homoepitaxial drift regions from methods such as halide vapor phase epitaxy (HVPE) and metal organic chemical vapor deposition (MOCVD). This makes Ga2O3 a prime candidate for vertical power rectifiers as thick, high quality drift regions are a necessity for high voltage devices such as the PN diode, junction barrier Schottky (JBS) diode, merged-PiN-Schottky (MPS) diode, and Schottky barrier diode (SBD). However, Ga2O3 exhibits a lack of p-type conductive that arises from an absence of dispersion within the valence band maximum. This has caused researchers to abandon the idea of homojunction devices that Si, SiC, and GaN devices benefit from; shifting to a heterojunction approach where NiO (3.7 eV) provides the source of p-type conductivity. This complicates fabrication and device characterization particularly for the Ga2O3 JBS diode where an etched Ga2O3-NiO heterojunction has thus far been unreported throughout the literature. This work investigates the numerous individual aspects that comprise an etched Ga2O3 heterojunction device which include the etching method, post etch damage removal and its impact on electrical performance, and ohmic and Schottky contacts critical for a JBS diode; all culminating in the demonstration of a JBS and MPS diodes. We also report our investigations into co-doping of Ga2O3 that yield degenerately doped epitaxial layers with record mobility (μ) values. While not directly correlated with Ga2O3-NiO heterojunction devices, this study lays the ground work for semi-insulating Ga2O3 depletion into unintentionally doped (UID) n-type Ga2O3. / Doctor of Philosophy / Power semiconductor devices reside at the center of many critical infrastructures that power modern society. These systems include but are not limited to; telecommunications, power supplies, motor drives, and electric trains. The semiconductors embedded within these systems are tasked with passing large amounts of current at negligible power losses in the on-state, while simultaneously withstanding high voltages in the off-state. For decades, the ground breaking discoveries and engineering feats produced by scientist and engineers have propelled the field of power electronics forward. As importunity for efficiency at higher power and fast switching speeds grows, the environments with which these systems are being tasked to operate in has also increased in rigour. These demands cannot be met with traditional silicon (Si) based devices as the material properties have been pushed to their performance limits. This has led to emerging and novel wide and ultrawide bandgap semiconductors such as silicon carbide (SiC), gallium nitride (GaN), and gallium oxide (Ga2O3) becoming a greater presence within the field of high power electronics. Ga2O3 in particular has seen a recent surge in interest within the power electronics communities due to the prospect of meeting the aforementioned demands, aided by a number of advantageous material and electrical properties. Ga2O3 is unlike any other wide or ultrawide bandgap material in that high quality Ga2O3 films known as epitaxial layers can be deposited atop native meltgrown Ga2O3 substrates. This reduces any mismatch or undesirable boundaries between the substrate and epitaxial layers that could otherwise impact device performance. This makes Ga2O3 a prime candidate for vertical power rectifiers, or switches such as a PN diode, junction barrier Schottky (JBS) diode or Schottky barrier diode (SBD). However, there has been no realization of p-type conductivity, or positively charged mobile carriers, within Ga2O3. This makes devices such as the PN and JBS diode difficult, as they rely on both n- and p-type conductivity. Without a source of p-type conductivity, Ga2O3 will be limited to unipolar devices that lack superior breakdown voltages and robustness. This work explores Ga2O3 heterojunction diodes, specifically the JBS diode, where nickel oxide (NiO) is used as the source of p-type conductivity. The need for a heterojunction introduces a host of issues that are otherwise not seen within bipolar semiconductors such as Si, SiC, and GaN. Our work details the analysis of the individual aspects that comprise a Ga2O3 heterojunction barrier Schottky diode including the etching process, etch damage removal, NiO sputtering, and contact formation. Our efforts have provided insight into unexplored areas within the Ga2O3 literature, leading to the first demonstration of a Ga2O3 merged- PiN-Schottky (MPS) diode; a more robust JBS diode capable of handling surge current. This work serves to further Ga2O3 as a viable semiconductor for the future of high power vertical rectifiers.

Because of the increasing emphasis on environmental concerns, there has been a growing demand for lower fuel consumption in modern transportation applications. To reduce fuel comsumption, higher efficiency, higher power density power converters are desired. The new generation of wide bandgap (WBG) power semiconductor devices pushs the switching frequency and output power of the electric system in transportation to a higher level thanks to their higher blocking voltage, higher operating frequency, and smaller parasitic elements. With benefits such as size reudcetion, costs saving, and reliability improvement, integration technologies have been widely adopted in power electronic systems, especially with the emergence of WBG semiconductor devices. These improvements will futher translate into reduced fuel consumption, extended operating range, and increased passenger compartment. Transportation applications pose a challenging environment for converter integration. The fast switching speed and the high blocking voltage of WBG semiconductor devices also put forward higher requirements for converter integration. First, the power converters used in transportation applications are often powered from the batteries that support multiple loads. During load changes, crank, or jump-start, undesired transients exist, which requires the power converters to be capable of operating under a wide-input-voltage range. This requirement results in a very limited design region of acceptance, making the converter hard to handle uncertainties. However, the integration process might bring large uncertainties, such as material property changes. This phenomenon can degrade converter performance or even cause design failures. Besides, the power converters for transporation applications often work in harsh environment, such as high ambient temperature or low air density. The former can lead to overheated and the latter degrades insulation strength, both of which hinder high power density design. Moreover, with the advent of all kinds of portable devices, converters are required to deliver more power. The introduction of universal serial bus (USB) power delivery (PD) extends the delivered power. To meet the specification, the power converters should provide a wide-output-voltage range, which brings challenges to the converter design. Furthermore, the charger is usually fed by an ac voltage of more than 100 V, which is then stepped down to 5 V – 20 V. The high step-down ratio increases the converter loss. To address the wide-input-voltage and high-temperature challenges, a dual-output, PCB-embedded transformer based active-clamp Flyback (ACF) gate-drive power supply (GDPS) for automotive applications is proposed. It has been demonstrated that the PCB-embedding technique effectively improves converter power density. The final prototype achieves a power density of 53.2 W/in3, a peak efficiency of 89.7 %, a transformer input-output capacitance of 9.7 pF, an input-voltage range of 9.9 V – 28 V, and a maximum operating temperature at low-line (LL) voltage of 105 °C and 115 °C at high-line (HL) voltage. Yet the above unit failed to meet all of the design targets due to the material property degradation in transformer. This degradation is caused by the mechanical stress induced in the integration process. To investigate its impact on wide-input-voltage converter design, several PCB-embedded magnetic boards are fabricated with different core materials and stress levels. Based on the analysis, experimentally derived correction factors are proposed and applied to the models used in the multi-objective optimization (MDO) process. The improved design successfully achieves the targeted wide-input-votlage range. When aircrafts climb during flight, air density reduces and the breakdown voltage decreases correspondingly. The insulation design becomes a challenge for the gate driver for SiC-based airborne applications. To provide sufficient insulation strength and achieve high power density simultaneously, a Paschen curve based insulation co-ordination is proposed. Electric-field control methodology is applied to the layout design. By properly designing the field control plates, the peak electric field has been shifted from the air to fr4 material that features much higher dielectric strength. The proposed gate driver attains a small size of 128.7 mm × 61.2 mm × 23.8 mm. Partial discharging tests are conducted in an altitude chamber. The experimental result shows that the proposed gate driver provides sufficient insulation strength at 50, 000 ft. To tackle the wide-output-voltage range and high-step-down ratio challenges in the USB-C PD charger in airborne applications, a LLC converter with PCB-winding based transformer with built-in leakage inductance is presented. A flying-capacitor based voltage divider (FCVD) switching bridge is proposed to replace the conventional half-bridge or full-bridge switching bridge. The propsed FCVD shows a current reduction of over 50 % than the conventional half-bridge with the same circuit elements. The prototype achieves a high efficiency of 90.3 % to 93.2 % over 5 V to 20 V outputs, and a high power density of 73.2 W/ in³, which is almost two time larger than the state-of-the-art power density. Partial discharging tests are also conducted in an altitude chamber. A partial discharing inspection voltage of 800 V is found at 10, 000 ft, which is much higher than the requirement. / Doctor of Philosophy / Because of the increasing emphasis on environmental concerns, there has been a growing demand for lower fuel consumption in modern transportation applications. The new generation of wide bandgap (WBG) power semiconductor devices and various integration technologies enable electronic systems in transportation to achieve higher efficiency and higher power density. These improvement will futher translate into reduced fuel consumption, extended operating range, and increased passenger compartment. However, transportation applications put more requirements on power converter designs. This dissertation, therefore, focusing on addressing the integration challenges in high power density WBG-based circuits for transportation applications from the aspects of wide-input-voltage range, material properties degradation, harsh environment, and wide-output-voltage range together with high step-down ratio. To meet the wide-input-voltage and high temperature requirements in automotive applications, a dual-output, PCB-embedded transformer based active-clamp Flyback (ACF) dc-dc converter is proposed. The final prototype achieves a power density of 53.2 W/in3, a peak efficiency of 89.7 %, a transformer input-output capacitance of 9.7 pF, an input-voltage range of 9.7 V â€" 28 V, and a maximum operating temperature at low-line (LL) voltage of 105 °C and 115 °C at high-line (HL) voltage. Yet the above unit failed to meet all of the design targets due to the material property degration in PCB-embedded transformer. This degradation is caused by the mechanical stress during integration process. To investigate its impact on automotive converter, several PCB-embedded magnetic boards are fabricated with different core materials and stress levels. Based on the analysis, experimentally derived correction factors are proposed and applied to the models used in the multiobjective optimization process. The improved design successfully achieves the targeted wide-input-votlage range. When aircrafts climb during flight, air density reduces and thus insulation strength decreases correspondingly. Instead of using oversized altitude correction factors provided by IEC standards, a Paschen curve based insulation co-ordination is proposed. Electric-field control methodology is applied to the gate driver layout. The proposed gate driver attains a small size of 128.7 mm × 61.2 mm × 23.8 mm. Partial discharging test is conducted in an altitude chamber. The experimental result shows that the proposed gate driver provide sufficient insulation strength at 50, 000 ft. To tackle the wide-output-voltage range and high-step-down ratio challenges in the USB-C PD charger in airborne applications, a LLC converter with PCB-winding based transformer with built-in leakage inductance is presented. A flying-capacitor-based voltage divider (FCVD) switching bridge is proposed to replace the conventional half-bridge or full-bridge switching bridge. The propsed FCVD shows a current reduction of over 50 % than the conventional half-bridge with the same circuit design. The prototype achieves a high efficiency of 90.3 % to 93.2 % over 5 V to 20 V outputs, and a high power density of 73.2 W/ in3, which is more than two time larger than the state-of-the-art power density. Partial discharging tests are also conducted in an altitude chamber. A partial discharing inspection voltage (PDIV) of 800 V is found at 10, 000 ft, which is much higher than the requirement.

Current AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) make use of multiple sources, drains, and gates in parallel to maximize transconductance and effective gain while minimizing the current density through each channel. To connect the sources to a common ground, current practice prescribes the fabrication of air bridges above the gates and drains. This practice has the advantage of a low dielectric constant and low parasitic capacitance, but it is at the expense of manufacturability and robust device operation. In the study described below, the air bridges in AlGaN/GaN HFETs were replaced by a polymer supported metallization bridge with the intention of improving ease of fabrication and reliability. The DC, high frequency, and power performance for several polymer step heights were investigated. The resultant structures were functional and robust; however, their electrical performance was degraded due to high source resistance. The cause of the high source resistance was found to be thinning of the metallization at the polymer step. The effect was more pronounced for higher step heights. / Master of Science

The purpose of this thesis is to investigate a novel method to develop broadband microstrip (patch) antennas using substrates containing photonic crystals. Photonic crystals are a class of periodic dielectric, metallic, or composite structures that when introduced to an electromagnetic signal can exhibit a forbidden band of frequencies (or bandgap) in which the incident signal destructively interferes and thus is unable to propagate. It is proposed that such photonic crystals will reduce surface waves and prohibit the formation of substrate modes, which are commonly known inhibitors of patch antenna designs. By reducing or eliminating the effects of these electromagnetic inhibitors with photonic crystals, a broadband response can be obtained from inherently narrowband antennas. In addition, it is also proposed that the behavior of the photonic crystals will lead to a reduction in pattern sidelobes resulting in improvements in radiation pattern front-to-back ratio and overall antenna efficiency. This research is verified through analytical simulations and experimental investigations in the Virginia Tech anaechoic chamber. / Master of Science

Esta dissertação de mestrado apresenta um estudo da aplicação de estruturas Electromagnetic Bandgap (EBG) em circuitos planares de micro-ondas, com a proposição de topologias originais de filtros rejeita-faixa de banda ultra-larga e dupla-banda e de uma metodologia de síntese desses filtros. Foi proposta uma metodologia de projeto de filtros EBG, que foi aplicada a um filtro em microlinha de transmissão utilizando duas estruturas EBG simultâneas, com a finalidade de se obter um filtro com banda de rejeição ultra-larga. Esse filtro foi construído em tecnologia planar, tendo demonstrado uma banda de rejeição ultra-larga de 11 GHz centrada em 11,5 GHz, com nível de rejeição superior a 34 dB, apresentando excelente concordância com os resultados de simulação computacional. Paralelamente, foi desenvolvida uma metodologia de síntese que permite a geração automática de novas topologias de filtros rejeita-faixa empregando estruturas EBG que resultem em uma banda larga de rejeição ou com duplas bandas de rejeição. A metodologia de síntese proposta envolve procedimentos computacionais de otimização da geometria das estruturas EBG aplicadas em microlinha de transmissão, visando a obtenção da resposta em frequência de um filtro definida por meio de uma Função Objetivo. Para esse fim empregou-se a ferramenta computacional MATLAB com o toolbox de algoritmos genéticos para desenvolver um programa de otimização, que interage com o simulador eletromagnético tridimensional EM-3D Microwave Suite da CST. O procedimento de síntese desenvolvido foi aplicado ao projeto de um filtro com dupla-banda de rejeição centradas em 3,3 GHz e 7,8 GHz e de três filtros com característica de rejeição em banda ultra-larga, capazes de rejeitar até uma banda de 9 GHz a 20 GHz com rejeição maior que 10 dB. Os filtros projetados foram construídos em tecnologia planar e caracterizados em frequências de micro-ondas. Os resultados experimentais comprovaram a eficácia e flexibilidade da metodologia de síntese proposta, que possibilitou contribuições originais na área de filtros rejeita-faixa usando estruturas EBG, com topologias inéditas. / This dissertation for a Master degree in Engineering, presents a survey of the application of Electromagnetic Bandgap (EBG) structures on microwave planar circuits, with the conception of original topologies for wide stopband and dual stopband filters, and the proposition of a synthesis methodology for these filters. A filter design methodology was proposed and applied to the design of a transmission line filter using two simultaneous EBG structures, aiming at the achievement of a filter with a wide stop-band. This filter was built in planar circuit technology, with the demonstration of an 11 GHz ultra-wide stopband centered in 11.5 GHz, with high degree of rejection superior than 34 dB, presenting excellent agreement with the computational simulation. In parallel, a synthesis methodology was developed to automatically generate new topologies of stopband filters using EBG structures, that results in filters with wide stopband or dual stop-bands. The proposed synthesis methodology involves computational processes for the optimization of the EBG structure geometry applied to microwave transmission line, aiming at achieving the filter response defined by an objective function. For that, the software MATLAB with the genetic algorithm toolbox was used to develop an optimization program, which interacts with the tridimensional electromagnetic simulator EM-3D Microwave Suite from CST. The synthesis procedure was applied to the project of one filter with dual stopband centered in 3.3 GHz and 7.8 GHz and to the project of three filters with an wide stopband feature capable of rejecting a frequency band from 9 GHz to 20 GHz with magnitude of rejection greater than 10 dB. The designed filters were built in planar technology and measured at microwave frequencies. The experimental results demonstrated the effectiveness and the flexibility of the proposed synthesis methodology, which allowed original contributions in the field of stopband filters using EBG structures, with novel topologies.

Nesta dissertação é apresentada a aplicação da programação geométrica no projeto de uma fonte de tensão de referência de baixa tensão de alimentação que pode ser integrada em tecnologias padrões CMOS. Também são apresentados os resultados experimentais de um projeto da fonte de bandgap feito por um método de projeto convencional, cuja experiência motivou e ajudou ao desenvolvimento da formulação do programa geométrico proposta neste trabalho. O programa geométrico desenvolvido nesta dissertação otimiza o desempenho da fonte de bandgap e agiliza seu tempo de projeto. As expressões matemáticas que descrevem o funcionamento e as principais especificações da fonte de bandgap foram geradas e adaptadas ao formato de um programa geométrico. A compensação da temperatura, o PSRR, o consumo de corrente, a área, a tensão de saída e a sua variação por causa da tensão de offset do OTA, e a estabilidade são as principais especificações deste tipo de fonte de tensão de referência e fazem parte do programa geométrico apresentado neste trabalho. Um exemplo do projeto usando o programa geométrico formulado neste trabalho, mostra a possibilidade de projetar a fonte de bandgap em alguns minutos com erros baixos entre os resultados do programa geométrico e de simulação. / This work presents the application of geometric programming in the design of a CMOS low-voltage bandgap voltage reference source. Test results of a bandgap voltage reference designed via a conventional method are showed, this design experience motivated and helped to formulate the geometric program developed in this work. The geometric program developed in this work optimizes the bandgap source performance and speeds up the design time. The mathematical expressions that describe the bandgap source functioning and specifications were developed and adapted in the geometric program format. The temperature compensation, the PSRR, the current consumption, the area, the output voltage and its variations under the operational tranconductance amplifier offset voltage, and the stability are the main specifications of this type of bandgap reference source and they are included into the geometric program presented in this work. An example of the design using the geometric program formulated in this work, shows the possibility of designing the bandgap source in a few minutes with low errors between the geometric program results and the simulation results.

Esta dissertação de mestrado apresenta um estudo da aplicação de estruturas Electromagnetic Bandgap (EBG) em circuitos planares de micro-ondas, com a proposição de topologias originais de filtros rejeita-faixa de banda ultra-larga e dupla-banda e de uma metodologia de síntese desses filtros. Foi proposta uma metodologia de projeto de filtros EBG, que foi aplicada a um filtro em microlinha de transmissão utilizando duas estruturas EBG simultâneas, com a finalidade de se obter um filtro com banda de rejeição ultra-larga. Esse filtro foi construído em tecnologia planar, tendo demonstrado uma banda de rejeição ultra-larga de 11 GHz centrada em 11,5 GHz, com nível de rejeição superior a 34 dB, apresentando excelente concordância com os resultados de simulação computacional. Paralelamente, foi desenvolvida uma metodologia de síntese que permite a geração automática de novas topologias de filtros rejeita-faixa empregando estruturas EBG que resultem em uma banda larga de rejeição ou com duplas bandas de rejeição. A metodologia de síntese proposta envolve procedimentos computacionais de otimização da geometria das estruturas EBG aplicadas em microlinha de transmissão, visando a obtenção da resposta em frequência de um filtro definida por meio de uma Função Objetivo. Para esse fim empregou-se a ferramenta computacional MATLAB com o toolbox de algoritmos genéticos para desenvolver um programa de otimização, que interage com o simulador eletromagnético tridimensional EM-3D Microwave Suite da CST. O procedimento de síntese desenvolvido foi aplicado ao projeto de um filtro com dupla-banda de rejeição centradas em 3,3 GHz e 7,8 GHz e de três filtros com característica de rejeição em banda ultra-larga, capazes de rejeitar até uma banda de 9 GHz a 20 GHz com rejeição maior que 10 dB. Os filtros projetados foram construídos em tecnologia planar e caracterizados em frequências de micro-ondas. Os resultados experimentais comprovaram a eficácia e flexibilidade da metodologia de síntese proposta, que possibilitou contribuições originais na área de filtros rejeita-faixa usando estruturas EBG, com topologias inéditas. / This dissertation for a Master degree in Engineering, presents a survey of the application of Electromagnetic Bandgap (EBG) structures on microwave planar circuits, with the conception of original topologies for wide stopband and dual stopband filters, and the proposition of a synthesis methodology for these filters. A filter design methodology was proposed and applied to the design of a transmission line filter using two simultaneous EBG structures, aiming at the achievement of a filter with a wide stop-band. This filter was built in planar circuit technology, with the demonstration of an 11 GHz ultra-wide stopband centered in 11.5 GHz, with high degree of rejection superior than 34 dB, presenting excellent agreement with the computational simulation. In parallel, a synthesis methodology was developed to automatically generate new topologies of stopband filters using EBG structures, that results in filters with wide stopband or dual stop-bands. The proposed synthesis methodology involves computational processes for the optimization of the EBG structure geometry applied to microwave transmission line, aiming at achieving the filter response defined by an objective function. For that, the software MATLAB with the genetic algorithm toolbox was used to develop an optimization program, which interacts with the tridimensional electromagnetic simulator EM-3D Microwave Suite from CST. The synthesis procedure was applied to the project of one filter with dual stopband centered in 3.3 GHz and 7.8 GHz and to the project of three filters with an wide stopband feature capable of rejecting a frequency band from 9 GHz to 20 GHz with magnitude of rejection greater than 10 dB. The designed filters were built in planar technology and measured at microwave frequencies. The experimental results demonstrated the effectiveness and the flexibility of the proposed synthesis methodology, which allowed original contributions in the field of stopband filters using EBG structures, with novel topologies.

Nesta dissertação é apresentada a aplicação da programação geométrica no projeto de uma fonte de tensão de referência de baixa tensão de alimentação que pode ser integrada em tecnologias padrões CMOS. Também são apresentados os resultados experimentais de um projeto da fonte de bandgap feito por um método de projeto convencional, cuja experiência motivou e ajudou ao desenvolvimento da formulação do programa geométrico proposta neste trabalho. O programa geométrico desenvolvido nesta dissertação otimiza o desempenho da fonte de bandgap e agiliza seu tempo de projeto. As expressões matemáticas que descrevem o funcionamento e as principais especificações da fonte de bandgap foram geradas e adaptadas ao formato de um programa geométrico. A compensação da temperatura, o PSRR, o consumo de corrente, a área, a tensão de saída e a sua variação por causa da tensão de offset do OTA, e a estabilidade são as principais especificações deste tipo de fonte de tensão de referência e fazem parte do programa geométrico apresentado neste trabalho. Um exemplo do projeto usando o programa geométrico formulado neste trabalho, mostra a possibilidade de projetar a fonte de bandgap em alguns minutos com erros baixos entre os resultados do programa geométrico e de simulação. / This work presents the application of geometric programming in the design of a CMOS low-voltage bandgap voltage reference source. Test results of a bandgap voltage reference designed via a conventional method are showed, this design experience motivated and helped to formulate the geometric program developed in this work. The geometric program developed in this work optimizes the bandgap source performance and speeds up the design time. The mathematical expressions that describe the bandgap source functioning and specifications were developed and adapted in the geometric program format. The temperature compensation, the PSRR, the current consumption, the area, the output voltage and its variations under the operational tranconductance amplifier offset voltage, and the stability are the main specifications of this type of bandgap reference source and they are included into the geometric program presented in this work. An example of the design using the geometric program formulated in this work, shows the possibility of designing the bandgap source in a few minutes with low errors between the geometric program results and the simulation results.

Magister Scientiae - MSc (Chemistry) / The increasing cost of fossil fuel energy production and its implication in environmental pollution and climate change created high demand for alternative and renewable sources of energy. This has led to great interest in research in the field of photovoltaic or solar cells Due to the abundance of sunlight, the technology is sustainable, non-polluting and can be implemented at places where power demand is needed, for example in rural areas. Solar cell devices that have been commercialized are currently based on silicon technology, involving the use of monocrystalline, polycrystalline and amorphous silicon. Although they produce highly efficient solar cells, the cost of Si solar cells is too high. Second generation solar cell materials such as cadmium telluride and third generation materials such as perovskites and organic polymers have been receiving much attention recently. However, they lack the efficiency of Si solar cells. This research proposes the development of high energy conservation photovoltaic cells from novel low-cost organosilicon polymers. The aim was to develop novel highly branched organosilane polymers such as poly(3-hexythiophene), polydi(thien-2-yl)dimethylsilane, poly(3-hexyl- [2,2'] bithiophenyl-5-yl)-dimethyl-thiophen-2yl-silane) as electron donors along with zinc oxide nanorod as the electron acceptor which were able to bring the efficiency of the resultant photovoltaic cell close to that of current Si solar cell. / 2021-08-31