Because of the anticipated high demand for Indium, ongoing growth of CIGS technology may be limited. Kesterite materials, which replace In with a Zn/Sn couple, are thought to be a solution to this issue. However, efficiencies are still below the 10% level, and these materials are proving to be complex. Even determination of the bandgap is not settled because of the occurrence of secondary phases. We use a film growth process, 2SSS, which we believe helps control the formation of secondary phases. Under the right growth conditions we find 1/1 Zn/Sn ratios and XRD signatures for Cu2ZnSnSe4 with no evidence of secondary phases. The optical absorption profile of our films is also a good match to the CIS profile even for films annealed at 500° C. We see no evidence of phase separation. The effect of intentional variation of the Zn/Sn ratio on material and device properties is also presented.

As hydrogen is increasingly used as an energy carrier, gas sensors that can operate at high temperatures and in harsh environments are needed for fuel cell, aerospace, and automotive applications. The high temperature Fischer-Tropsch process also uses mixtures of hydrogen and carbon monoxide to generate synthetic fuels from non-fossil precursors. As the Fischer-Tropsch process depends upon particular gas mixtures to generate various fuels, a sensor which can determine the proper ratio of reactants is needed. To this end, gallium nitride (GaN) has been used to fabricate a resistive gas sensor. GaN is a suitable semiconductor to be used in hydrogen because of a wide, direct bandgap and greater stability than many other semiconductors. Additionally, resistive sensors offer several advantages in design compared to other types of sensors. Response time of resistive sensors is faster than those of other semiconductor sensors because catalytic and diffusion steps are not part of the response mechanism. Instead, a thermal detection mechanism is employed in resistive sensors. In this work, sensor response to changes in hydrogen concentration in nitrogen was measured at 200°C and 300°C. Sensor response was measured as change in current from a reference response to pure nitrogen at each temperature under a constant 2.5 V bias. Isothermal operation was achieved by controlling sensor temperature and pre-heating gas mixtures. Sensitivity to concentration increased upon an increase in temperature. Additionally, sensor response to concentration changes of H2 in CO at 50 °C was demonstrated. Sensors show similar responses to nitrogen and carbon monoxide mixtures, which have similar thermal properties. Using the thermal detection mechanism of the sensors, a correlation was shown between sensor response and a gas mixture thermal conductivity.

<p>Mechanical oscillators form the primary structure of a wide variety of devices including energy harvesters and vibration absorbers, and also have parallel systems in electrical fields for signal processing. In the area of wave propagation, recent study in periodic chains have focused on active tuning methods to control bandgap regions, bands in the frequency response in which no propagating wave modes exist. In energy harvesting, several coupled systems have been proposed to enhance the peak power or bandwidth of a single harvester through arrays or dynamic magnification. Though there are applications in several fields, the work in this dissertation can all fit into the category of coupled non-linear oscillators. In each sub-field, this study demonstrates means to advance state of the art techniques by adding nonlinearity to a coupled system of linear oscillators, or by adding a coupled device to a nonlinear oscillator.</p><p>The first part of this dissertation develops the analytical methods for studying wave propagation in nonlinear systems. A framework for studying rotational systems is presented and used to design an testbed for wave propagation experiments using a chain of axially aligned pendulums. Standard analytical methods are also adapted to allow uncertainty analysis techniques to provide insight into the relative impact of variations in design parameters. Most analytical insight in these systems is derived from a linearlized model and assumes low amplitude oscillations. Additional study on the nonlinear system is performed to analyze the types of deviations from this behavior that would be expected as amplitudes increase and nonlinear effects become more prominent.</p><p>The second part of this dissertation describes and demonstrates the first means of passive control of bandgap regions in a periodic structure. By imposing an asymmetrical bistability to an oscillator in each unit cell, it is analytically shown that each potential well has different wave propagation behaviors. Experimental demonstrations are also provided to confirm the simulated results.</p><p>The final section performs analytical and numerical analysis of a new system design to improve the performance of a nonlinear energy harvester by adding an excited dynamic magnifier. It is shown that this addition results in higher peak power and wider bandwidth than the uncoupled harvester. Unlike standard dynamic magnifiers, this performance does not come at the expense of power efficiency, and unlike harvester arrays, does not require the added cost of multiple energy harvesters.</p> / Dissertation

Bandgap reference circuits are used in a host of analog, digital, and mixed-signal systems to establish an accurate voltage reference for the entire IC. The most used CMOS implementation for voltage references is the bandgap circuit due to its high predictability, and low dependence of the supply voltage and temperature of operation. This work studies a CMOS implementation of a resistor-less bandgap reference, which consumes low power. The most relevant and traditional approaches usually employed to implement bandgap voltage references are investigated. The impact of process, power-supply, load and temperature variations has been analyzed and simulated. The functionality of critical components of the circuit has been verified through chip implementation. / text

Modern communications systems are evolving rapidly to address the demand for data exchange, a fact which imposes stringent requirements on the design process of their RF and antenna front-ends. The most crucial pressure on the antenna front-end is the need for miniaturized design solutions while maintaining the desired radiation performance. To satisfy this need, this thesis presents innovative types of periodic antennas, including electromagnetic bandgap (EBG) antennas, which are distinguished in two respects. First, the periodic cells contain thick metal traces, contrary to the conventional thin-trace cells. Second, such thick traces contain very narrow gaps with very tall sidewalls, referred to as high aspect ratio (HAR) gaps. When such cells are used in the structure of the proposed periodic antennas, the high capacitance of HAR gaps decreases the resonance frequency, mitigates conduction loss, and thus, yields considerably small high efficiency antennas. For instance, one of the sample antenna designs with only two EBG cells offers a very small XYZ volume of 0.25λ×0.28λ×0.037λ with efficiency of 83%. Also, a circularly polarized HAR EBG antenna is presented which has a footprint as small as 0.26λ×0.29λ and efficiency as high as 94%. The main analysis method developed in this thesis is a combination of numerical and mathematical analyses and is referred to as HFSS/Bloch method. The numerical part of this method is conducted using a High Frequency Structure Simulator (HFSS), and the mathematical part is based on the classic Bloch theory. The HFSS/Bloch method acts as the mainstay of the thesis and all designs are built upon the insight provided by this method. A circuit model using transmission line (TL) theory is also developed for some of the unit cells and antennas. The HFSS/Bloch perspective results in a HAR EBG TL with radiation properties, a fragment of which (2 to 6 cells) is introduced as a novel antenna, the self-excited EBG resonator antenna (SE-EBG-RA). Open (OC) and short circuited (SC) versions of this antenna are studied and the inherently smaller size of the SC version is demonstrated. Moreover, the possibility of employing the SE-EBG-RA as the element of a series-fed array structure is investigated and some sample high-efficiency, flat array antennas are rendered. A microstrip antenna is also developed, the structure of which is composed of 3×3 unit cells and shows fast-wave behaviors. Most antenna designs are resonant in nature; however, in one case, a low-profile efficient leaky-wave antenna with scanning radiation pattern is proposed. Several antenna prototypes are fabricated and tested to validate the analyses and designs. As the structures are based on tall metal traces, two relevant fabrication methods are considered, including CNC machining and deep X-ray lithography (DXRL). Hands-on experiments provide an outlook of possible future DXRL fabricated SE-EBG-RAs.

As the technology advances, the feature size of the modern integrated circuits (ICs) has decreased dramatically to nanometer amplitude. On one hand, the shrink brings benefits, such as high speed and low power consumption per transistor. On the other hand, it poses a threat to the reliable operation of the ICs by the increased radiation sensitivity, such as single event effects (SEEs). For example, in 2010, a commercial-off-the-shelf (COTS) BiCMOS DC/DC pulse width modulator (PWM) IC was observed to be sensitive to neutrons on terrestrial real-time applications, where negative 6-μs glitches were induced by the single event transient (SET) effects. As a result, a project was set up to comprehensively study the failure mechanisms with various test methodologies and to develop SET-tolerant circuits to mitigate the SET sensitivity. First, the pulsed laser technique is adopted to perform the investigation on the SET response of the DC/DC PWM chip. A Ti:Sapphire single photon absorption (SPA) laser with different wavelengths and repetition rates is used as an irradiation source in this study. The sensitive devices in the chip are found to be the bandgap voltage reference circuit thanks to the well-controlled location information of the pulsed laser. The result is verified by comparing with the previous alpha particle and neutron testing data as well as circuit simulation using EDA tools. The root cause for the sensitivity is also acquired by analyzing the circuit. The temperature is also varied to study the effect of the temperature-induced quiescent point shift on the SET sensitivity of the chip. The experimental results show that the quiescent point shifts have different impacts on SET sensitivities due to the different structures and positions of the circuitries. After that, heavy ions, protons, and the pulsed X-ray are used as irradiation sources to further study the SET response of the DC/DC chip. The heavy ion and pulsed laser data are correlated to each other. And the equivalent LETs for laser with wavelengths of 750 nm, 800 nm, 850 nm and 920 nm are acquired. This conclusion can be used to obtain the equivalent heavy ion cross section of any area in a chip by using the pulsed laser technique, which will facilitate the SET testing procedure dramatically. The proton and heavy ion data are also correlated to each other based on a rectangular parallel piped (RPP) model, which gives convenience in Soft Error Rate (SER) estimation. The potential application of pulsed X-ray technique in SET field is also investigated. It is capable of generating similar results with those of heavy ion and pulsed laser testing. Both the advantages and disadvantages of this technique are explained. This provides an alternative choice for the SET testing in the future. Finally, the bandgap voltage reference circuit in the DC/DC PWM is redesigned and fabricated in bulk CMOS 130nm technology and a SET hardened bandgap circuit is proposed and investigated. The CMOS substrate PNP transistor is much less sensitive to SETs than the BiCMOS NPN transistor according to the pulsed laser test results. The reason is analyzed to be the different fabrication processes of the two technologies. The laser test results also indicate that the SET hardened bandgap circuit can mitigate the SET amplitude dramatically, which is consistent with the SPICE simulation results. These researches provide more understandings on the design of SET hardened bandgap voltage reference circuit.

The conventional mushroom-like Sievenpiper structure is re-visited in this thesis and a relationship is established between the dispersion and reflection phase characteristics of the structure. It is shown that the reflection phase frequency at which the structure behaves as a Perfect Magnetic Conductor (PMC) can be predicted for varying angles of incidence from the modal distribution in the dispersion diagrams and corresponds to the supported leaky modes within the light cone. A methodology to independently tune the location of the PMC frequency point with respect to the surface wave band-gap location is then presented. The influence of having said PMC frequency point located inside or outside the surface wave band-gap on a dipole radiation pattern is then studied numerically. It is demonstrated that the antenna exhibits a higher gain when the PMC frequency and band-gap coincide versus when they are separated. Two design cases are then presented for when the aforementioned properties coincide and are separated and a gain improvement of 1.2 dB is measured for the former case.

The conventional mushroom-like Sievenpiper structure is re-visited in this thesis and a relationship is established between the dispersion and reflection phase characteristics of the structure. It is shown that the reflection phase frequency at which the structure behaves as a Perfect Magnetic Conductor (PMC) can be predicted for varying angles of incidence from the modal distribution in the dispersion diagrams and corresponds to the supported leaky modes within the light cone. A methodology to independently tune the location of the PMC frequency point with respect to the surface wave band-gap location is then presented. The influence of having said PMC frequency point located inside or outside the surface wave band-gap on a dipole radiation pattern is then studied numerically. It is demonstrated that the antenna exhibits a higher gain when the PMC frequency and band-gap coincide versus when they are separated. Two design cases are then presented for when the aforementioned properties coincide and are separated and a gain improvement of 1.2 dB is measured for the former case.

付記する学位プログラム名: 京都大学卓越大学院プログラム「先端光・電子デバイス創成学」 / 京都大学 / 新制・課程博士 / 博士(工学) / 甲第23909号 / 工博第4996号 / 新制||工||1780(附属図書館) / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 木本 恒暢, 教授 川上 養一, 准教授 安藤 裕一郎 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

Neste trabalho, utilizamos o desenvolvimento recente do método DFT/LDA-1/2 para cálculos de estados excitados em materiais. Começamos com um resumo da teoria do funcional da densidade (DFT) e incluímos uma introdução ao método LDA-1/2 para cálculos de excitações em sólidos. Na compilação dos resultados esperamos ter demonstrado a utilidade do LDA-1/2 para cálculos de alinhamentos de bandas em junções semicondutor/semicondutor e semicondutor/isolante. A aplicação do método envolve o conhecimento da química básica dos sistemas. Para tanto, escolhemos sistemas importantes para diversas aplicações, e cujos modelos de simulação estão o limite ou fora do alcance de metodologias que envolvem alto custo computacional, mas que foram bem caracterizados experimentalmente. Concentramos nossas ações no estudo da capacidade preditiva do LDA-1/2 para alinhamentos de bandas, os chamados band offsets, particularmente importantes para a micro e optoeletrônica. Quando não foi possível compararmos nossos resultados com o experimento, procuramos a comparação com métodos estado-da-arte como GW. Bons resultados foram obtidos para band gaps e band offsets de interfaces A1As/GaAs, Si/SiO2, A1N/GaN e CdSe/CdTe, que representam os diferentes tipos de jun_c~oes poss__veis, com (e.g. A1As/GaAs, A1N/GaN) e sem (e.g. Si/SiO2, CdSe/CdTe) ^anions omuns, com (e.g. A1As/GaAs) e sem (e.g. CdSe/CdTe, Si/SiO2) casamento de parâmetros de rede e diferentes tipos de alinhamentos (\"straddling\", e.g. A1As/GaAs ou \"staggered\"e.g. CdSe/CdTe). Analisamos de maneira sistemática o comportamento do entorno do bandgap ao longo da interface, verificando plano a plano atômico o comportamento das bordas de valência e condução com LDA-1/2 em comparação com o LDA, ou comparando diferentes modelos dentro do LDA-1/2, como o caso do CdSe/CdTe e do Si/SiO2. Para o caso A1As/GaAs, aproveitamos o casamento de parâmetros de rede dos semicondutores constituintes e tentamos um modelo de interface de ligas A1xGa1-x As/GaAs para estudar a variação de valência, condução e bandgap em função da composição x. No AlN/GaN, estudamos também os offsets com as contribuições dos orbitais separadamente. Em todos os casos o LDA-1/2 levou-nos a resultados interessantes com modelos simples. A exploração de novas fronteiras de aplicação do método fez-se necessária com a diminuição da dimensionalidade dos sistemas, de 3D (bulk ) para 2D (interfaces) e depois para 1D, ou seja, _os quânticos (\"nanofios\"). Nosso material de estudo para os foi o ZnO que, além da motivação oriunda de conhecidas aplicações em optoeletrônica, apresenta desafios para simulações bulk com qualquer método, e que foi abordado com certo sucesso usando o LDA-1/2 anteriormente, sendo que para fios quânticos encontramos resultados interessantes em geometrias triangulares que facilitaram os modelos. Calculamos o bandgap ZnO bulk e de nanofios passivados e não passivados com hidrogênios usando LDA e LDA-1/2 sem polarização de spin. As estruturas de bandas e o bandgap como função do diâmetro do ano_o foram calculados e ajustes com funções de decaimento foram feitos para comparação, por extrapolação, dos bandgaps com valores experimentais. Foi possível comparar nossos resultados de fios com o bulk, e predizer uma faixa de variaação de bandgaps que os experimentais podem encontrar para nanofios triangulares de ZnO. Também foi feita análise de energias de confinamento em fios quânticos de ZnO, comparando o LDA com LDA-1/2. Finalmente, mostramos os resultados de uma oportunidade de aplicação do método a um material com defeitos, recentemente descoberto e promissor, e com enorme mercado potencial em fotocatálise, o Ti1-O4N. Nosso trabalho envolveu a aplicação do LDA-1/2 a um problema muito desafiador, e.g. a geração de energia limpa, especificamente a separação da molécula de água para produção de hidrogênio. O desafio maior vem da dificuldade de predição de bandgaps teoricamente, em particular para sistemas grandes como é o caso de modelos atomísticos com defeitos, devido aos altos custos computacionais envolvidos. Tais dificuldades forçam os pesquisadores a usarem parâmetros ajustáveis ou métodos semi-empíricos, ou modelos simplificados demais para descrever precisamente resultados experimentais. Isto dificulta o estudo dos sistemas fotocatalíticos potencialmente eficientes e que não foram ainda caracterizados ou otimizados. O LDA-1/2 é aqui validado para esta classe de materiais, abrindo assim a oportunidade para estudar sistemas mais realísticos e complexos para cálculos ainda mais precisos, particularmente para geração de energia limpa. Em particular, modelamos o TiO2 na estrutura rutile com nitrogênio substitucional, cuja estrutura eletrônica é ainda debatida. Foi a primeira aplicação do LDA-1/2 a sistemas com algum tipo de defeito, com ótimos resultados para o novo sistema Ti1- _O4N com vacâncias de Ti. / In this work, we used the recent development of DFT/LDA-1/2 method for calculations of excited states in materials. We begin with a summary of the density functional theory (DFT) and included an introduction to the method LDA-1/2 for calculations of excitations in solids. In compiling the results we hope to have demonstrated the usefulness of the LDA-1/2 for calculating alignments of bands at junctions semiconductor / semiconductor and semiconductor / insulator. The method involves the knowledge of basic chemical systems. To do this we chose systems important for several applications, and simulation models which are the limit or beyond the reach of methodologies involving high computational cost, but have been well characterized experimentally. We focus our actions in the study of the predictive capability of the LDA-1/2 for alignments of bands, the band called offsets, particularly important for micro and optoelectronics. When it was not possible to compare our results with experiment, we compared the methods with state of the art as GW. Good results were obtained for band gaps and band offsets of interfaces A1As/GaAs, Si/SiO2, A1N/GaN and CdSe / CdTe, which represent the different types of jun_c poss__veis-tions, with (eg A1As/GaAs, A1N/GaN) and without (eg Si/SiO2, CdSe / CdTe) ^ omuns anions with (eg A1As/GaAs) and without (eg CdSe / CdTe, Si/SiO2) matching network parameters and different types of alignments (\"straddling\" eg A1As/GaAs or \"staggered\" eg CdSe / CdTe). Systematically analyze the behavior of the environment along the interface bandgap, plane by plane scanning behavior of the edges atomic valence and conduction with LDA-half in comparison with LDA, or comparing templates within the LDA-1 / 2, as the case of CdSe / CdTe and Si/SiO2. For the case A1As/GaAs, we take the marriage of network parameters of semiconductor components and try an interface model alloys A1xGa1-x As / GaAs to study the variation of valence, conduction and bandgap as a function of composition x. In the AlN / GaN, we also studied the offsets with the contributions of the orbitals separately. In all cases the LDA-half led us to interesting results from simple models. The exploration of new frontiers of the method was necessary to decrease the dimensionality of the systems, the 3D (bulk) for 2D (interfaces) and then to 1D, ie, quantum _os (\"nanowires\"). Our study material for the ZnO was that, apart from the motivation coming from known applications in optoelectronics, presents challenges for bulk simulations with any method, and that was addressed with some success using the LDA-half earlier, and for wireless find interesting results in quantum triangular geometries that facilitated models. We calculate the bandgap and bulk ZnO nanowires passivated and not passivated with hydrogen using LDA and LDA-1/2 without spin polarization. The bandgap structures and strips as a function of the diameter of ano_o adjustments are calculated and decay functions for comparison were made by extrapolation of the bandgaps with experimental values. It was possible to compare our results with the bulk of wires, and predict a range of bandgaps that variaação can find experimental triangular ZnO nanowires. It was also made analysis of energy confinement in ZnO quantum wires, comparing LDA with LDA-1/2. Finally, we show the results of an opportunity to apply the method to a material with defects, newly discovered and promising, and with huge market potential in photocatalysis, the Ti1-O4N. Our work involved the application of LDA-1/2 to a very challenging problem, eg the generation of clean energy, specifically the separation of the water molecule for hydrogen production. The main challenge has been the difficulty of predicting bandgaps theoretically, in particular for large systems such as the model atomistic defects because of the high computational costs involved. These difficulties force the researchers to use adjustable parameters or semi-empirical methods, or other simplified models to accurately describe experimental results. This complicates the study of potentially efficient photocatalytic systems which have not yet been characterized or optimized. The LDA-1/2 is here validated for this class of materials, thus opening the opportunity to study more realistic and complex systems for more accurate calculations, particularly for clean energy generation. In particular, we modeled the structure of TiO2 in the rutile with substitutional nitrogen, whose electronic structure is still debated. It was the first application of the LDA-1/2 systems with some kind of defect, with excellent results for the new system Ti1-_O4N with Ti vacancies.