yes / A compact dual U-shaped slot PIFA antenna with Electromagnetic Bandgap (EBG) material on a relatively low dielectric constant substrate is presented. Periodic structures have found to reduce mutual coupling and decrease the separation of antenna and ground plane. A design with EGB material suitable for a small terminal mobile handset operating at 2.4 GHz was studied. Simulated and measured scattering parameters are compared for U-shaped slot PIFA antenna with and without EBG structures. An evaluation of MIMO antennas is presented, with analysis of the mutual coupling, correlation coefficient, total active reflection coefficient (TARC), channel capacity and capacity loss. The proposed antenna meets the requirements for practical application within a mobile handset. / Electronics and Telecommunications

In the application of power inverters, power density has become a key design specification where it has stringent requirements on system size and weight. Achieving high power density need to combine lasted wide bandgap (WBG) device technology and high switching frequency to reduce passive filter size thus further shrink overall space. While still maintaining decent power conversion efficiency and low electromagnetic interference (EMI) with higher switching frequency, soft-switching needs to be implemented. A novel auxiliary resonant snubber is introduced. The design and operation are carried out, in which this snubber circuitry enables main Gallium Nitride (GaN) switches operating under zero voltage switching (ZVS) condition, and auxiliary Silicon Carbide (SiC) diodes switching under zero current switching (ZCS) condition. Besides, the auxiliary snubber circuitry gating algorithm is also optimized which allows reduction of the switching and conduction loss in auxiliary GaN switches to obtain higher system efficiency and better thermal performance. Here, this novel auxiliary resonant snubber circuitry is applied to a traditional full bridge inverter with flexible modulation suitability. This proposed inverter can be applied to a wide range of potential applications, such as string solar inverter, renewable energy combined distributed generation, dc-ac part of bi-directional electrical vehicle (EV) on-board charger, and uninterruptible power supply (UPS), etc. / Master of Science

Le but de ce travail est d'étudier et de développer des voies pour améliorer l'efficacité des cellules solaires à base de Kesterite. La première partie de ce manuscrit traite du développement d’un procédé de base : le mécanisme de formation de l’absorbeur est étudié en fonction des conditions de croissance du composé Cu2ZnSnS4 (CZTS à base de soufre pur) et Cu2ZnSnSe4 (CZTSe à base de sélénium pur). Un procédé séquentiel en deux étapes a été utilisé pour synthétiser l’absorbeur en Kesterite. La première étape est un dépôt par pulvérisation cathodique des précurseurs métalliques (Cu, Zn et Sn élémentaires) et la deuxième étape consiste en un recuit des précurseurs sous atmosphère de sélénium (pour le CZTSe dans un réacteur semi-ouvert) ou de soufre (pour le CZTS dans un réacteur ouvert). Différentes optimisations du procédé sont réalisées pour améliorer la microstructure et les performances des dispositifs. Dans le cas du dispositif à base de CZTSe, le meilleur rendement de conversion photovoltaïque obtenu est de 7,6% en utilisant un profil de température en deux étapes et un suscepteur fermé. Pour les cellules solaires à base de CZTS, la meilleure performance obtenue est de 5,9% grâce à l’optimisation de la température et de la pression partielle ensoufre : Les performances des dispositifs augmentent avec la pression partielle en soufre.L’incorporation de Na (Sodium) et de Sb (Antimoine) dans les absorbeurs Kesterite en pur soufre a été testée comme la première stratégie pour améliorer les performances des dispositifs à base de CZTS. L'incorporation de Sb n‘entraîne pas d'amélioration en termes de propriétés des matériaux ou des dispositifs, tandis que le co-dopage avec Na et Sb a montré une morphologie améliorée des absorbeurs. Cependant, cette amélioration n’est suivie d’aucun effet sur les propriétés photovoltaïques du dispositif. L’incorporation de Sb n’est donc pas bénéfique pour la cellule solaire à base de CZTS. D'autre part, la contamination intentionnelle avec du Na s'est avérée bénéfique pour les cellules solaires, particulièrement pour la tension en circuit ouvert. Par conséquent, l’efficacité des dispositifs avec une teneur en Na optimisée est doublée (> 4,5 %) par rapport à celle des échantillons de référence sans Na.La seconde étude pour améliorer les performances des cellules solaires à base de Kesterite concerne l’introduction de gradients de chalcogènes (S/Se) dans l’épaisseur de l’absorbeur. Le but est d’obtenir des gradients de bande interdite afin d’augmenter la longueur de collection des porteurs et de diminuer les phénomènes de recombinaison. Dans ce but, deux procédés sont développés pour réaliser des gradients simples (en face avant ou en face arrière de l’absorbeur). Ces procédés consistent en des recuits successifs (sulfurisation/sélénisation) d’empilements de précurseurs. Pour obtenir un gradient en face avant, un recuit de sulfurisation à différentes températures et durées est appliqué après un recuit de sélénisation standard. Une température plus importante entraîne un gradient plus marqué. Une couche de défaut à base de soufre pur est également formée au cours de ce processus, qui peut être éliminée à l'aide d'une gravure au HCl. Le rendement de conversion photovoltaïque le plus élevé obtenu à l’aide de ce procédé est de 3,5%. Pour obtenir un gradient en face arrière, un recuit de sulfurisation à différentes températures avant un recuit de sélénisation standard a été utilisé. A faible température de sulfurisation, des absorbeurs avec une bonne morphologie ont été obtenus mais sans gradient de composition en chalcogène tandis que l’utilisation de températures de sulfurisation plus importantes ont entraîné l’apparition de gradients de composition mais ont détérioré la morphologie des absorbeurs. Ainsi, les voies et limites pour réaliser des absorbeurs de Kesterite à gradient de bande interdite sont proposées. / The goal of this work is to study and to develop routes toward efficiency improvement of Kesterite based solar cells. The first part of the manuscript deals with the development of a baseline process: formation mechanism of the absorber is studied according to the growth condition for both Cu2ZnSnS4 (pure sulfur absorber CZTS) and Cu2ZnSnSe4 (pure selenium absorber CZTSe) compounds. Two-step sequential process is used for synthesizing Kesterite material. The first step consists in the sputtering deposition of pure metallic precursors (elemental Cu, Zn, and Sn) and the second step consists in the annealing of precursors under selenium (for CZTSe in a semi-open reactor) or sulfur (for CZTS in an open reactor). In the case of CZTSe based solar cell, a maximum power conversion efficiency of 7.6% has been obtained using a two-step temperature profile and a closed susceptor. The best performance for a CZTS based device is 5.9%, this result has been obtained by optimizing the process temperature and sulfur vapor pressure: the higher sulfur vapor pressure the better device performance.Incorporation of Na (Sodium) and Sb (Antimony) in the pure sulfur Kesterite absorber has been tested as a first strategy to enhance performances of CZTS devices. Incorporation of Sb does not show any improvement in terms of material or device properties, whereas improved morphology is obtained by co-doping with Na and Sb. However, this improvement is not related to any effect on device properties. Thus, using Sb proved to be not beneficial for the CZTS-based solar cell. On the other hand, intentional contamination with Na is found to be beneficial particularly in terms of open circuit voltage. As a result, the device power conversion efficiency with optimized Na content is doubled (> 4.5%) compared to the reference sample without Na.The second study to increase efficiencies in Kesterite solar cells deals with the introduction of chalcogen (S/Se) gradients as the function of depth in the absorber. The aim is to obtain bandgap gradients in order to increase carrier collection length as well as decrease carrier recombination. For this purpose, two processes are developed to realize only simple grading (front or back surface gradients) which consist of sequential annealing stages (sulfurization/selenization) of precursor stacks. To obtain a front surface gradient, a sulfurization step at various temperatures and for different duration has been tested after a standard selenization process. A higher sulfurization temperature shows a higher degree of grading. A pure sulfur-based defect layer is also formed during this process, which can be removed using an HCl etching. A maximum efficiency of 3.5% is achieved with a CZTS-based device using this synthesis process. To realize back grading, variable temperature sulfurization annealing prior to a standard selenization process has been used. At a low temperature of sulfurization, good absorber morphologies are obtained but without the evidence of chalcogen gradient while using higher sulfurization temperature leads to graded absorbers but with poor morphology. Thus, the routes and limitations to realize kesterite absorber with gradient are proposed.

<p>Ubrzan razvoj bežičnih komunikacionih sistema postavlja zahtev za razvojem novih kompaktnih kola visokih performansi, na visokim učestanostima u mikrotalasnom i milimetarskom opsegu, koja će zadovoljiti potrebu za većim brzinama za prenos velike količine podataka. U okviru ove disertacije su predstavljena pasivna kola projektovana u tehnologiji mikrostrip talasovoda na bazi procepa, koja mogu da zadovolje zahteve postavljene od komunikacionih sistema.Predstavljeno je šest filtarskih topologija i jedan sprežnik. Prve četiri filtarske topologije zasnovane su na novim minijaturnim rezonantnim šupljinama u tehnologiji mikrostrip grebenastog talasovoda na bazi procepa. Filtri su projektovani na centralnim učestanostima u okolini 13,5 GHz i pokazali su odlične performanse u poređenju sa filtrima predstavljenim u literaturi. Druge dve filtarske topologije zasnovane su na dual-mod rezonatorima projektovanim za rad na milimetarskom opsegu učestanosti. Predloženim rezonatorima projektovan je filtar sa jednim i sa dva pola, na učestanostima većim od 30 GHz, realizovan u tehnologiji mikrostrip grebenastog talasovoda na bazi procepa. Sve filtarske topologije su fabrikovane u standardnoj tehnologiji štampanih ploča. Takođe, u disertaciji je predložen direkcioni sprežnik sa 0-dB odlaznim talasom realizovan u tehnologiji mikrostrip grebenastog talasovoda na bazi procepa. Sprežnik se odlikuje dobrim osobinama i postavio je osnove za dalja istraživanja.</p> / <p>The rapid changes in wireless communications systems establish the need for devices that operate at high frequencies in microwave and mm-wave region, provide higher performances and utilize higher frequency bands to deliver higher data rates. Within this thesis six bandpass filters have been developed and one forward-wave 0dB coupler has been designed. Firstly, bandpass filters have been designed based on novel cavity resonators with mushroom inclusions in microstrip-ridge gap waveguide technology (MS-RGW). Filters have been designed to operate at the frequencies around 13.5 GHz and have shown excellent performances. Next two bandpass filters have been designed to operate at frequencies above 30 GHz, based on dual-mode resonators designed in MS-RGW technology. The filters have been designed with two and four poles. All filter topologies have been fabricated in standard circuit board technology (PCB). Also, forward-wave 0-dB directional coupler has been designed with good performances.</p>

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No. of bitstreams: 1 silva_ea_dr_bauru.pdf: 5038032 bytes, checksum: 096e39873786dd29f13d8faedd460bb8 (MD5) Previous issue date: 2018-07-05 / Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Les cellules solaires polymériques attirent un grand intérêt dans ce domaine de recherche, en raison du faible coût, du procédé de fabrication de grandes surfaces, des matériaux de manutention légers et de la possibilité de leur fabrication par diverses techniques. Pour une bonne efficacité des dispositifs photovoltaïques, la couche active doit contenir une bonne absorption de la lumière du soleil. En termes de bandgap,cela signifie que plus le bandgap est petit, plus le flux de photons absorbés est grand. Une manière d'accomplir ceci avec les matériaux polymères est la synthèse d'un copolymère alterné dans lequel le bandgap optique est diminué, ce que l'on appelle des polymères low-bandgap. L'organisation structurelle de la couche active joue un rôle important dans la performance des dispositifs, y compris les dispositifs photovoltaïques, et la technique Langmuir-Schaefer (LS) permet de fabriquer des films nanostructurés avec contrôle de l'épaisseur, qui peuvent servir de base pour construire de meilleurs dispositifs. Dans ce contexte, l'objectif de ce travail était de synthétiser des polymères low-bandgap et ensuite de fabriquer et caractériser des films LS de ces polymères et leurs mélanges avec un dérivé de fullerène, le PCBM, pour leur application en tant que couche active de cellules solaires. Les films LS des polymères et leurs mélanges avec PCBM ont été fabriqués et des mesures de caractérisation ont été effectuées. Ces films ont été caractérisés par des mesures électriques (courant vs tension, spectroscopie d'impédance et voltampérométrie cyclique), morphologiques (microscopie à force atomique) et optiques (UV-visible, diffusion Raman et transmission infrarouge). Par les films de Langmuir et les mesures morphologiques, il a été possible d'observer les caractéristiques spécifiques concernant la conformation de chaque polymère sous forme de film. Des mesures optiques confirment l'absorption aux longueurs d'onde élevées attendues pour ces polymères. Dans les mesures électriques, les résultats ont montré des conductivités différentes pour les mêmes matériaux lorsque les types d'électrodes ont été changés. Les dispositifs photovoltaïques des films LS fabriqués n'ont pas atteint de bonnes valeurs d'efficicacité. Les films spincoating de ces polymères testés en tant que couche active des dispositifs, sous atmosphère contrôlée, ont montré un’efficacité allant jusqu'à 0,6%. / Células solares poliméricas atraem grande interesse nessa área de pesquisa, devido ao baixo custo, processo de fabricação de grandes áreas, materiais de manuseio leves e a possibilidade de sua fabricação por diversas técnicas. Para uma boa eficiência dos dispositivos fotovoltaicos, a camada ativa deve conter uma boa absorção da luz solar. Em termos de bandgap, isto quer dizer que quanto menor o bandgap maior o fluxo de fótons absorvidos. Uma maneira de realizar isto com os materiais poliméricos é a síntese de um polímero no qual o bandgap óptico tem a capacidade de aumentar a captura da luz solar, os chamados polímeros low-bandgap. A organização estrutural da camada ativa possui um papel importante na performance de dispositivos, inclusive dos fotovoltaicos, e a técnica Langmuir-Schaefer (LS) proporciona a capacidade de fabricar filmes nanoestruturados e com controle de espessura, podendo servir de base para construção de melhores dispositivos. Dentro deste contexto, o objetivo deste trabalho foi sintetizar polímeros low-bandgap e, posteriormente fabricar e caracterizar filmes LS destes polímeros e de suas blendas com um derivado de fulereno, o PCBM, para a aplicação dos mesmos como camada ativa de células solares. Foram fabricados filmes LS dos polímeros e de suas misturas com PCBM e realizadas medidas de caracterização. Estes filmes foram caracterizados por meio de medidas elétricas (corrente vs. Tensão, espectroscopia de impedância e voltametria cíclica), morfológica (microscopia de força atômica) e óptica (Ultravioleta-Visível, Espalhamento Raman e transmissão no infravermelho). Com os filmes de Langmuir e as medidas morfológicas foi possível observar as características específicas de como é a conformação de cada polímero na forma de filme. As medidas ópticas confirmam a absorção em altos comprimentos de onda esperados para estes polímeros. Nas medidas elétricas os resultados mostraram diferentes condutividades para os mesmos materiais quando mudado os tipos de eletrodos. Os dispositivos fotovoltaicos dos filmes LS fabricados não alcançaram bons valores de eficiência. Filmes spin-coating destes polímeros testados como camada ativa dos dispositivos, em atmosfera controlada, revelaram eficiência de até 0.6%. / Polymeric solar cells attract great interest in this area of research due to the potential low cost, large area fabrication process, lightweight physical feature and the possibility of fabricating these cells by several techniques. To achieve good efficiency in the photovoltaic devices the active layer must have an efficient absorption of sunlight. In terms of bandgap, this means that the smaller the bandgap the greater the flux of photons absorbed. One way to accomplish this, with the polymeric materials, is the synthesis of a polymer in which the optical bandgap has the ability to increase the capture of sunlight, the so-called low-bandgap polymers. The structural organization of the active layer plays an important role in the performance of devices, including in photovoltaic devices, and the Langmuir-Schaefer (LS) technique provides the ability to manufacture nanostructured films with thickness control, which can serve as a basis for building better devices. In this context, the aim of this work was to synthesize low-bandgap polymers for later manufacturing and characterization of LS films of these polymers and their blends with a fullerene derivative, PCBM, and test them as active layer of solar cells. LS films of such polymers and their blends with PCBM were made and characterization measurements were performed. These films were characterized by electrical (current vs. voltage, impedance spectroscopy and cyclic voltammetry), morphology (atomic force microscopy) and optical (ultraviolet-visible, Raman scattering and infrared) measurements. Through the Langmuir films and the morphological measurements, it was possible to observe the specific characteristics of how it is the conformation of each polymer in film form. Optical measurements confirmed the absorption at high wavelengths expected for these polymers. In the electrical measurements, the results showed different conductivities for the same materials when the types of electrodes were changed. The photovoltaic devices manufactured from LS technique have not reached good efficiency values. When spin-coated active layers were tested as OPV devices in a controlled atmosphere the efficiency achieved up to 0.6% / CAPES DS / CNPq SWE 205489/2014-1

Master of Science / Department of Electrical and Computer Engineering / Behrooz Mirafzal / Wide bandgap devices have gained increasing attention in the market of power electronics for their ability to perform even in harsh environments. The high voltage blocking and high temperature withstanding capabilities make them outperform existing Silicon devices. They are expected to find places in future traction systems, electric vehicles, LED lightning and renewable energy engineering systems. In spite of several other advantages later mentioned in this paper, WBG devices also face a few challenges which need to be addressed before they can be applied in large scale in industries. Electromagnetic interference and new requirements in packaging methods are some of the challenges being faced by WBG devices. After the commercialization of these devices, many experiments are being carried out to understand and validate their abilities and drawbacks. This paper summarizes the experimental results of various applications of mainly Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices and also includes a section explaining the current challenges for their employment and improvements being made to overcome them.

Orientador: Nobuo Oki / Banca: Cláudio Kitano / Banca: Márcio Barbosa Lucks / Resumo: Referências de tensão integradas com baixa sensibilidade à temperatura, tensão de a- limentação e eventos transitórios são componentes críticos na maioria dos circuitos integra- dos. Neste trabalho, além das restrições costumeiras, foi adicionada a preocupação com a in- terferência eletromagnética a qual vem ganhando muita importância devido a crescente polui- ção eletromagnética no ambiente. Assim, neste trabalho, propõe-se o projeto de uma referên- cia de tensão tipo bandgap com baixa susceptibilidade a interferência eletromagnética (EMI). O projeto deste circuito baseia-se na soma de duas correntes (referência de tensão baseada em corrente), uma com coeficiente complementar a temperatura absoluta (CTAT) e outra com coeficiente proporcional à temperatura absoluta (PTAT), aplicada sobre um resistor. Neste projeto, a susceptibilidade a interferência eletromagnética de uma referência de tensão band- gap é estudada por meio de simulação. Projetada para ser fabricada com a tecnologia CMOS 0,35 μm da AMS (Autriamicrosystems), a referência forneceu uma tensão de referência está- vel de 1,354 V em sua saída operando normalmente na faixa de temperatura de -40 a 150oC. Quando submetido à EMI, o circuito exibiu apenas 24,7 mV (quando filtros capacitivos são incluído) de offset induzido, para um sinal de interferência variando de 150 kHz a 1 GHz / Abstract: Integrated voltage references with low sensitivity to temperature, supply voltage and transient events are critical requirements in the most of integrated circuits. In this work, be- sides the usual restrictions, was added to concern with electromagnetic interference which is gaining much importance due to increasing electromagnetic pollution on the environment. So, in this work, proposes the design of a bandgap voltage reference with low susceptibility to electromagnetic interference (EMI) is proposed. The design of the circuit is based on the sum of two currents (current-based voltage reference), one with coefficient complementary to ab- solute temperature (CTAT) and the other with coefficient proportional to absolute temperature (PTAT) into a resistor. In this work, the susceptibility to electromagnetic interference in a bandgap voltage reference is evaluated by simulations. Designed to be implemented in AMS (Autriamicrosystems) 0,35 μm CMOS process, the reference provides a stable voltage refer- ence equal to 1,354 V in the output working properly in the temperature range of -40 to 150oC. When EMI is injected, the circuit exhibits only 24,7 mV (when capacitive filters are included) of induced offset, for an interference signal varying in the frequency range of 150 kHz to 1 GHz / Mestre

abstract: Space exploration is a large field that requires high performing circuitry due to the harsh environment. Within a space environment one of the biggest factors leading to circuit failure is radiation. Circuits must be robust enough to continue operation after being exposed to the high doses of radiation. Bandgap reference (BGR) circuits are designed to be voltage references that stay stable across a wide range of supply voltages and temperatures. A bandgap reference is a piece of a large circuit that supplies critical elements of the large circuit with a constant voltage. When used in a space environment with large amounts of radiation a BGR needs to maintain its output voltage to enable the rest of the circuit to operate under proper conditions. Since a BGR is not a standalone circuit it is difficult and expensive to test if a BGR is maintaining its reference voltage. This thesis describes a methodology of isolating and simulating bandgap references. Both NPN and PNP bandgap references are simulated over a variety of radiation doses and dose rates. This methodology will allow the degradation due to radiation of a BGR to be modeled easily and affordably. It can be observed that many circuits experience enhanced low dose rate sensitivity (ELDRS) which can lead to failure at low total ionizing doses (TID) of radiation. A compact model library demonstrating degradation of transistors at both high and low dose rates (HDR and LDR) will be used to show bandgap references reliability. Specifically, two bandgap references being utilized in commercial off the shelf low dropout regulators (LDO) will be evaluated. The LDOs are reverse engineered in a simulation program with integrated circuit emphasis (SPICE). Within the two LDOs the bandgaps will be the points of interest. Of the LDOs one has a positive regulated voltage and one has a negative regulated voltage. This requires an NPN and a PNP based BGR respectively. This simulation methodology will draw conclusions about the above bandgap references, and how they operate under radiation at different doses and dose rates. / Dissertation/Thesis / Masters Thesis Electrical Engineering 2019

The question of whether the small bandgaps of semiconductors play a significant role in their secondary electron emission properties is investigated by studying evaporated graphitic amorphous carbon, which has a roughly 0.5 eV bandgap, in comparison with microcrystalline graphite, which has zero bandgap. The graphitic amorphous carbon is found to have a 30% increase in its maximum secondary electron yield over that of two microcrystalline graphite samples with comparable secondary electron yields: highly oriented pyrolytic graphite and colloidal graphite. The potentially confounding influence of the vacuum level has been isolated through the measurement of the photoelectron onset energy of the materials. Other less significant materials parameters are also isolated and discussed. Based on these measurements, it is concluded the magnitude of bandgap may have an appreciable effect on the magnitude of the secondary electron yield and further studies of this effect with annealed graphitic amorphous carbon are warranted. In support of this work, a hemispherical two-grid, retarding field electron energy analyzer has been designed, constructed, and characterized for the present work. The advantages and disadvantages of the analyzer are discussed in comparison to other methods of measuring secondary electron emission. The analyzer has a resolution of ±(1.5 eV + 4% of the incident electron energy). A novel effort to derive theoretical, absolute correction factors that compensate for electron losses within the analyzer, mainly due to the grid transmission, is presented. The corrected secondary electron yield of polycrystalline gold is found to be 30% above comparable experimental studies. The corrected backscattered electron yield of polycrystalline gold is found to be 14% above comparable experimental studies. Corrected secondary yields for the microcrystalline graphite samples are found to range from 35-70% above those found in five experimental studies in the literature. The theoretical correction factors are estimated to have a 4-6% uncertainty. Reasons for the large discrepancy in yield measurements with the analyzer are discussed and thought to be due mainly to the lack of similar corrective factors in the previous studies. The supporting instrumentation is fully characterized, including a detailed error analysis.

<p>This thesis investigates the possibility of realizing bandgap reference crcuits for processes having sub-1V supply voltage. With the scaling of gate oxide thickness supply voltage is getting reduced. But the threshold voltage of transistors is not getting scaled at the same rate as that of the supply voltage. This makes it difficult to incorporate conventional designs of bandgap reference circuits to processeshaving near to 1V supply voltage. In the first part of the thesis a comprehensive study on existing low voltage bandgap reference circuits is done. Using these ideas a low-power, low-voltage bandgap reference circuit is designed in the second part of the thesis work. </p><p>The proposed bandgap reference circuit is capable of generating a reference voltage of 0.730V. The circuit is implemented in 0.18µm standard CMOS technology and operates with 0.9V supply voltage, consuming 5µA current. The circuit achieves 7 ppm/K of temperature coefficient with supply voltage range from 0.9 to 1.5V and temperature range from 0 to 60C.</p>