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The discovery of highly efficient organic light-emitting diodes (OLEDs) in the 1980s has stimulated extensive research on organic semiconductors and devices. Underlying this breakthrough is the realization of the organic heterojunction (OH). Besides OLEDs, the implementation of the OH also significantly improves the power conversion efficiency in organic photovoltaic cells (OPVs). The continued technological advancements in organic electronic devices depend on the accumulation of knowledge of the intrinsic properties of organic materials and related interfaces. Among them, charge-carrier transport and carrier injection are two key factors that govern the performance of a device. This thesis mainly focuses on the charge carrier injection and transport at organic heterojunctions. The carrier transport properties of different organic materials used in this study are characterized by time-of-flight (TOF) and admittance spectroscopy (AS). An injection model is formulated by considering the carrier distribution at both sides of the interface. Using a steady-state simulation approach, the effect of accumulated charges on energy level alignment at OH is revealed. Instead of a constant injection barrier, it is found that the barrier varies with applied voltage. Moreover, an escape probability function in the injection model is modified by taking into account the total hopping rate and available hopping sites at the interface. The model predicts that the injection current at low temperature can be dramatically modified by an extremely small density of deep trap states. More importantly, the temperature dependence of the injection current is found to decrease with increasing barrier height. This suggests that extracting the barrier height from the J vs 1/T plot, as commonly employed in the literature, is problematic. These theoretical predictions are confirmed by a series of experiments on heterojunction devices with various barrier heights. In addition, the presence of deep trap states is also consistent with carrier mobility measurements at low temperature. From the point of view of application, an interface chemical doping method is proposed to engineer the carrier injection at an organic heterojunction. It is found that the the injection current can be effectively increased or suppressed by introducing a thin (2 nm) doped organic layer at the interface. This technique is further extended to study the impact of an injection barrier at the OH. in OLEDs, on device performance. It is shown that a 0.3 eV injection barrier at the OH, that is normally negligible at metal/organic interface, can reduce the device efficiency by 25 %. This is explained by the carrier distribution in the density-of-states at the OH. Furthermore, the carrier transport properties in a bulk heterojunction system are investigated. The bulk heterojunction consists of an interpenetrating network of a polymeric electron donor and a molecular electron acceptor. This material system has been studied in the last few years as an attractive power conversion efficiency (5% under AM 1.5) of OPV cells has been demonstrated. It is found that the electron mobility is greatly dependent on the thermal treatment of the film. Interfacial dipole effect at the heterojunction between the donor and the acceptor is proposed to be the determining factor that alters the carrier mobility in different nano-scale structures.

The discovery of highly efficient organic light-emitting diodes (OLEDs) in the 1980s has stimulated extensive research on organic semiconductors and devices. Underlying this breakthrough is the realization of the organic heterojunction (OH). Besides OLEDs, the implementation of the OH also significantly improves the power conversion efficiency in organic photovoltaic cells (OPVs). The continued technological advancements in organic electronic devices depend on the accumulation of knowledge of the intrinsic properties of organic materials and related interfaces. Among them, charge-carrier transport and carrier injection are two key factors that govern the performance of a device. This thesis mainly focuses on the charge carrier injection and transport at organic heterojunctions. The carrier transport properties of different organic materials used in this study are characterized by time-of-flight (TOF) and admittance spectroscopy (AS). An injection model is formulated by considering the carrier distribution at both sides of the interface. Using a steady-state simulation approach, the effect of accumulated charges on energy level alignment at OH is revealed. Instead of a constant injection barrier, it is found that the barrier varies with applied voltage. Moreover, an escape probability function in the injection model is modified by taking into account the total hopping rate and available hopping sites at the interface. The model predicts that the injection current at low temperature can be dramatically modified by an extremely small density of deep trap states. More importantly, the temperature dependence of the injection current is found to decrease with increasing barrier height. This suggests that extracting the barrier height from the J vs 1/T plot, as commonly employed in the literature, is problematic. These theoretical predictions are confirmed by a series of experiments on heterojunction devices with various barrier heights. In addition, the presence of deep trap states is also consistent with carrier mobility measurements at low temperature. From the point of view of application, an interface chemical doping method is proposed to engineer the carrier injection at an organic heterojunction. It is found that the the injection current can be effectively increased or suppressed by introducing a thin (2 nm) doped organic layer at the interface. This technique is further extended to study the impact of an injection barrier at the OH. in OLEDs, on device performance. It is shown that a 0.3 eV injection barrier at the OH, that is normally negligible at metal/organic interface, can reduce the device efficiency by 25 %. This is explained by the carrier distribution in the density-of-states at the OH. Furthermore, the carrier transport properties in a bulk heterojunction system are investigated. The bulk heterojunction consists of an interpenetrating network of a polymeric electron donor and a molecular electron acceptor. This material system has been studied in the last few years as an attractive power conversion efficiency (5% under AM 1.5) of OPV cells has been demonstrated. It is found that the electron mobility is greatly dependent on the thermal treatment of the film. Interfacial dipole effect at the heterojunction between the donor and the acceptor is proposed to be the determining factor that alters the carrier mobility in different nano-scale structures.

The goal of this thesis is to grow InGaN at different temperatures in the form of GaN/InGaN double-heterojunction nanorods. XRD is used to analyze the In composition of film. PL, £g-PL, and CL are used to study the luminescence of InGaN and GaN, and calculation of In composition. For nanorods, the TEM and EDS are the tools to study the In composition and InGaN thickness. SEM is used to study the sample morphology. The work of EL has also been done in this thesis.

<p>Nanoporous dye-sensitized solar cells (DSSC) are promising devices for solar to electric energy conversion. In this thesis photoelectron spectroscopy (PES), x-ray absorption spectroscopy (XAS) and photovoltaic measurements are used for studies of the key interfaces in the DSSC. </p><p>Photovoltaic properties of new combinations of TiO₂/dye/hole-conductor heterojunctions were demonstrated and their interfacial structures were studied. Three different types of hole-conductor materials were investigated: Triarylamine derivatives, a conducting polymer and CuI. The difference in photocurrent and photovoltage properties of the heterojunction due to small changes in the hole-conductor material was followed. Also a series of dye molecules were used to measure the influence of the dye on the photovoltaic properties. Differences in both the energy-level matching and the geometric structure of the interfaces in the different heterojunctions were studied by PES. This combination of photovoltaic and PES measurements shows the possibility to link the interfacial electronic and molecular structure to the functional properties of the device. </p><p>Three effective dyes used in the DSSC, Ru(dcbpy)₂(NCS)₂, Ru(tcterpy)(NCS)₃ and an organic dye were studied in detail using PES and XAS and resonant core hole decay spectroscopy. The results gave information of the frontier electronic structure of the dyes and how the dyes are bonded to the TiO₂ surface. </p><p>Finally, the hole-conductor mechanism in a conducting polymer was investigated theoretically using semi-empirical and ab-initio methods. </p>

Nanoporous dye-sensitized solar cells (DSSC) are promising devices for solar to electric energy conversion. In this thesis photoelectron spectroscopy (PES), x-ray absorption spectroscopy (XAS) and photovoltaic measurements are used for studies of the key interfaces in the DSSC. Photovoltaic properties of new combinations of TiO2/dye/hole-conductor heterojunctions were demonstrated and their interfacial structures were studied. Three different types of hole-conductor materials were investigated: Triarylamine derivatives, a conducting polymer and CuI. The difference in photocurrent and photovoltage properties of the heterojunction due to small changes in the hole-conductor material was followed. Also a series of dye molecules were used to measure the influence of the dye on the photovoltaic properties. Differences in both the energy-level matching and the geometric structure of the interfaces in the different heterojunctions were studied by PES. This combination of photovoltaic and PES measurements shows the possibility to link the interfacial electronic and molecular structure to the functional properties of the device. Three effective dyes used in the DSSC, Ru(dcbpy)2(NCS)2, Ru(tcterpy)(NCS)3 and an organic dye were studied in detail using PES and XAS and resonant core hole decay spectroscopy. The results gave information of the frontier electronic structure of the dyes and how the dyes are bonded to the TiO2 surface. Finally, the hole-conductor mechanism in a conducting polymer was investigated theoretically using semi-empirical and ab-initio methods.

The length of ZnO nanotip can be controlled by the deposition time, and the crystal of ZnO nanotip can be enhanced by a thermal annealing at 300oC in this study.The thickness of TiO2 on ITO/glass also can be controlled by the deposition time in this investigate. There are three major parts in this study : 1. (1). The control of thickness of TiO2 film and length of ZnO nanotip and (2). the difference of their photocatalytic activities are two major parts. 2. The relationship between the surface area and the photocatalytic activities of TiO2 powder (P25) and film. 3. The improvement of photocatalytic activity was utilized by the hetrojunction of ZnO nanotip/TiO2 and TiO2/ZnO nanotip, and the P25 is used as a reference for all measurements.

abstract: Silicon photovoltaics (PV) is approaching its theoretical efficiency limit as a single-junction technology. To break this limit and further lower the PV-generated levelized cost of electricity, it is necessary to engineer a silicon-based “tandem” technology in which a solar cell of another material is stacked on top of silicon to make more efficient use of the full solar spectrum. This dissertation understands and develops four aspects of silicon-based tandem PV technology. First, a new “spectral efficiency” concept is proposed to understand how tandem cells should be designed and to identify the best tandem partners for silicon cells. Using spectral efficiency, a top-cell-design guide is constructed for silicon-based tandems that sets efficiency targets for top cells with various bandgaps to achieve targeted tandem efficiencies. Second, silicon heterojunction solar cells are tuned to the near-infrared spectrum to enable world-record perovskite/silicon tandems both in two- and four-terminal configurations. In particular, for the 23.6%-efficient two-terminal tandem, a single-side textured silicon bottom cell is fabricated with a low-refractive-index silicon nanoparticle layer as a rear reflector. This design boosts the current density to 18.5 mA/cm2; this value exceeds that of any other silicon bottom cell and matches that of the top cell. Third, “PVMirrors” are proposed as a novel tandem architecture to integrate silicon cells with various top cells. A strength of the design is that the PVMirror collects diffuse light as a concentrating technology. With this concept, a gallium-arsenide/silicon PVMirror tandem is demonstrated with an outdoor efficiency of 29.6%, with respect to the global irradiance. Finally, a simple and versatile analytical model is constructed to evaluate the cost competitiveness of an arbitrary tandem against its sub-cell alternatives. It indicates that tandems will become increasingly attractive in the market, as the ratio of sub-cell module cost to area-related balance-of-system cost—the key metric that will determine the market success or failure of tandems—is decreasing. As an evolution of silicon technology, silicon-based tandems are the future of PV. They will allow more people to have access to clean energy at ultra-low cost. This thesis defines both the technological and economic landscape of silicon-based tandems, and makes important contributions to this tandem future. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2018

Photocatalysis is a growing area of study for a clean and renewable energy source, particularly for the purification of water and air. Researchers have studied the combination of various semiconductors to create photocatalysts with improved activities, but little has been reported in selecting semiconductors based on their extrinsic type – namely n-type or p-type. In this study, a BiOBr (p-type)-Bi2WO6 (n-type) heterojunction semiconductor was synthesized by the facile hydrothermal method. The new materials were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM) and diffuse-reflection spectroscopy (DRS). Degradation of Rhodamine B was employed to measure the photocatalytic activity of the as-prepared photocatalysts. On the basis of these techniques, the influence of the synthesis conditions (namely, hydrothermal reaction time and temperature) and the degradation conditions (namely, initial concentration, pH of the initial dye water and amount of catalysts dosage) have been explored and discussed. Furthermore, effect of concentrations of the dopants (the atomic ratio of BiOBr and Bi2WO6 were 1:4， 1:1， 4:1) was examined by measuring the degradation rate of Rhodamine B. Finally, the mechanism of the degradation process and the enhancement effect of heterojunction were also interpreted by analyzing the quenching effect of the scavengers and the band structure. Conclusively, this study shed light on the benefits of using heterojunction photocatalysts, and also on the importance of considering the semiconductor type when forming composite photocatalysts.