The advancement of quantum dot sensitized solar cell (QDSSC) technology depends on optimizing directional charge transfer between light absorbing quantum dots, TiO2, and a redox mediator. Kinetically, reduction of oxidized quantum dots by the redox mediator should be rapid and faster than the back electron transfer between TiO2 and oxidized quantum dots to maintain photocurrent. Thermodynamically, the reduction potential of the redox mediator should be sufficiently positive to provide high photovoltages. To satisfy both criteria and enhance power conversion efficiencies, we introduced charge transfer spin-crossover MnII/III complexes as promising redox mediator alternatives in QDSSCs. High photovoltages ~ 1 V were achieved by a series of Mn poly(pyrazolyl)borates, with reduction potentials ~0.51 V vs Ag/AgCl. Back electron transfer rates were slower than Co(bpy)3, where bpy = 2,2'-bipyridine. This is indicative of a large barrier to recombination imposed by spin-crossover in these complexes. By capitalizing on these characteristics, efficient MnII/III-based QDSSCs can be achieved with more soluble Mn-complexes. In hybrid bulk heterojunction solar cells (HBHJs), light-absorbing conjugated polymers are interfaced with films of nanostructured TiO2. Photovoltaic action requires photoelectrons in the polymer to transfer into the TiO2, and therefore, polymers are designed with lowest unoccupied molecular orbital levels higher in energy than the conduction band of TiO2 for thermodynamically favorable electron transfer. Currently, the energy level values used to guide solar cell design are referenced from the separated materials, neglecting the fact that upon heterojunction formation material energetics are altered. With spectroelectrochemistry, we discovered that spontaneous charge transfer occurs upon heterojunction formation between poly(3-hexylthiophene) (P3HT) and TiO2. It was determined that deep trap states in TiO2 accept electrons from P3HT and form hole polarons in the polymer. This equilibrium charge separation alters energetics through the formation of interfacial dipoles and results in band bending that inhibits desired photoelectron injection into TiO2, limiting HBHJ solar cell performance. New guidelines for improved photocurrent are proposed by tuning the energetics of the heterojunction to reverse the direction of the interfacial dipole, enhancing photoelectron injection. / Master of Science

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Philosophiae Doctor - PhD / The continuous increase in energy consumption and decrease in fossil fuels reserves are a primary concern worldwide; especially for South Africa. Therefore, there is an urgent need for alternative energy resources that will be sustainable, and environmentally friendly in order to tackle the ecological degradation generated by the use of fossil fuels. Among many energy ‘niches’, solar energy appears to be one of the most promising and reliable for the African continent because of the constant availability of sun light. Organic conjugated polymers have been identified as suitable materials to ensure proper design and fabrication of flexible, easy to process and cost-effective solar cells. Their tendency to exhibit good semiconducting properties and their capability to absorb photons from the sunlight and convert it into electrical energy are important features that justify their use in organic photovoltaic cells. Many different polymers have been investigated as either electron donating or electron accepting materials. Among them, poly(3-hexylthiophene) is one of the best electron donor materials that have been used in organic photovoltaic cells. It is a good light absorber and its Highest Occupied Molecular Orbital (HOMO) energy level is suitable to allow electron transfer into an appropriate electron acceptor. On the other hand, the molecular ordering found in dendrimers attracted some interest in the field of photovoltaics as this feature can ensure a constant flow of charges. In this work, I hereby report for the first time, the chemical synthesis of a highly crystalline dendritic star copolymer generation 1 poly(propylene thiophenoimine)-co-poly(3-hexylthiophene) (G1PPT-co-P3HT) with high molecular weight and investigate its application as donating material in bulk heterojunction organic photovoltaics.

Back Amorphous-Crystalline silicon Heterojunction (BACH) solar cells which combine the benefits of back contact and heterojunction silicon solar cells have been fabricated at the University of Toronto. p- and n-type amorphous silicon deposited at low temperature (~<200 oC) by DC Saddle-Field PECVD system forms interdigitated hetero-emitter and base contacts on the rear-side. A photolithography approach using thermal oxide for electrical isolation demonstrates the proof-of-concept. Three methods for fabricating simplified and advanced BACH cells were explored. The best performing 1 cm2 cell showed an AM1.5G conversion efficiency of 8.11%, VOC = 0.536 V, JSC = 20.1 mA/cm2 and FF = 75.5%. The BACH cell performance is limited by poor surface passivation and un-optimized cell design. With completely low temperature processing, highly passivated front and rear surfaces, and independent optimization of front-side optical antireflective features and rear-side electrical junctions and contacts, the BACH cell has the potential of becoming highly cost competitive.

Back Amorphous-Crystalline silicon Heterojunction (BACH) solar cells which combine the benefits of back contact and heterojunction silicon solar cells have been fabricated at the University of Toronto. p- and n-type amorphous silicon deposited at low temperature (~<200 oC) by DC Saddle-Field PECVD system forms interdigitated hetero-emitter and base contacts on the rear-side. A photolithography approach using thermal oxide for electrical isolation demonstrates the proof-of-concept. Three methods for fabricating simplified and advanced BACH cells were explored. The best performing 1 cm2 cell showed an AM1.5G conversion efficiency of 8.11%, VOC = 0.536 V, JSC = 20.1 mA/cm2 and FF = 75.5%. The BACH cell performance is limited by poor surface passivation and un-optimized cell design. With completely low temperature processing, highly passivated front and rear surfaces, and independent optimization of front-side optical antireflective features and rear-side electrical junctions and contacts, the BACH cell has the potential of becoming highly cost competitive.

In this thesis, we propose a new structure of GaP/a-Si:H/BulkSi solar cell in which the additional a-Si:H layer due to the concept of energy bandgap is used to improve the open-circuit voltage. As the a-Si:H doping concentration is increased, the upward bandgap bending is expected to be observed; hence, a high open-circuit voltage is obtained. But in this situation, the upward bandgap bending also hinders the carrier transport, leading a low short-circuit current density. It is worth noting that the proposed solar cell can have a high open-circuit voltage of 0.758 V. In addition, we carefully investigate the characteristics of wide-bandgap gallium phosphide (GaP) material used for silicon-based solar cells. According to the simulated results, the absorption of GaP is better than silicon with a wavelength below 450 nm. Also, the GaP/BulkSi solar cell is shown to have a lower reflectivity value than the conventional PN_BulkSi solar cell. Hence we can prove that the internal quantum efficiency and external quantum efficiency are improved accordingly. As a result, the short-circuit current density is increased about 10 %. In addition, the optimized parameters of a GaP/BulkSi solar cell are as follows: the short-circuit current density is 21.264 mA/cm2, the open-circuit voltage is 0.624 V, the fill factor is 82.4 %, the conversion efficiency is 11.236 %, respectively.

Silicon heterojunction solar cells, a-Si:H/c-Si, are promising technology for future photovoltaic systems. An a-Si:H/c-Si heterojunction solar cell combines the advantages of single crystalline silicon photovoltaic with thin-film technologies. This thesis reports a detailed survey of heterojunction silicon solar cells with p-type wafer fabricated by magnetron sputtering and Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques at low processing temperature. In the first part of this study, magnetron sputtering method was employed to fabricate a-Si:H thin films and then a-Si:H/c-Si solar cells. Amorphous silicon (a-Si:H) films were grown on glass in order to perform electrical and optical characterizations. The J-V characteristics of the silicon heterojunction solar cells were analyzed as a function of a-Si:H properties. It was shown that a-Si thin films with well-behaved chemical and electronic properties could be fabricated by the magnetron sputtering. Hydrogenation of the grown film could be achieved by H2 introduction into the chamber during the sputtering. In spite of the good film properties, fabricated solar cells had poor photovoltaic parameters with a low rectification characteristic. This low device performance was caused by high resistivity and low doping concentration in the sputtered film. The second part of the thesis is dedicated to heterojunction solar cells fabricated by PECVD. In this part a systematic study of various PECVD processing parameters were carried out to optimize the a-Si:H(n) emitter properties for the a-Si:H(n)/c-Si(p) solar cell applications. In the next stage, a thin optimized a-Si:H(i) buffer layer was included on the emitter side and on the rear side of the c-Si(p) to improve the surface passivation. Insertion of an a-Si:H(i) buffer layer yielded higher high open circuit voltage (Voc) with lower fill factor. It was shown that high Voc is due to the efficient surface passivation by the front/rear intrinsic layer which was also confirmed by the measurement of high effective lifetime for photo-generated carriers. Low fill factor on the other hand is caused by increasing resistivity of the solar cells by inserting low conductivity a-Si:H(i) layers.

Using GaAs HBT provided by AWSC to construct Gummel Poon static model.then using the GaAs HBT processing of GCS to design MMIC power amplifier for the 1.9~2.0 GHz PCS system. This power amplifier exhibits an output power of 27dBm and a power added efficiency as high as 32% at an operation voltage of 3.4V.

ABSTRACT Organic light emitting diode (OLED) has significant scientific implication and technological potential. Using organic materials for tailored emitting color, threshold voltage reduction, and emission efficiency gain are the key points for the commercialization of OLED. An UV-Vis spectrophotometer was applied to obtain the absorption spectra of PVK, C6, and PRL, as well as their respective band gap (Eg) values of 3.49 eV, 2.32 eV, and 2.55 eV. The turn-on oxidation potential of cyclic voltammograms was reduced for HOMO energy at 5.64 eV, 5.21 eV, and 5.16 eV, respectively. The Eg subtracted from HOMO energy yielded the respective LUMO values of 2.15 eV, 2.89 eV and 2.61 eV. Excitation at 457 nm or 325 nm was applied to the freestanding films of PVK, PVK doped with C6 (10/1), and PVK doped with PRL (10/1). From the UV-Vis absorption spectra and Egs, we knew that 457 nm excitation did not generate photoluminescence (PL) of PVK. The PL spectra of the doped freestanding films were mostly attributed to the dye molecules of C6 or PRL. The PL spectra of doped freestanding films were insensitive to the excitation sources at 325 nm and 457 nm. There was a blue shift at the PL emission peak indicative of energy transfer from PVK to C6 or PRL for the doped films. Using spin-coating or vacuum deposition to fabricate PVK, C6, and PRL films onto an ITO substrate followed by evaporating Al (Ag) as the electron injector to form OLED devices. Because of the energy transfer between PVK and C6 or PRL, ITO/PVK:C6/Al homojunction OLED showed a smaller threshold voltage than that of ITO/C6/Al, from 9 V to 3.5 V. Likewise, ITO/PVK:PRL/Al homojunction OLED had a smaller threshold voltage than that of ITO/PRL/Al, from 8 V to 4.5 V. PVK was also used as the hole blocking layer to construct heterojunction OLED to balance electron-hole numbers in the emitting layer. The threshold voltage of ITO/C6/Al reduced from 9 V to 7 V with a heterojunction of ITO/PVK/C6/Al. A device of ITO/PRL/Al having a threshold voltage of 8V reduced to 6V with an ITO/PVK/PRL/Al heterojunction OLED. Coating a protective layer (Ag) on the metallic electron injector, or packaging the device in N2 could both decrease the decay and increase the life time of OLED.

The fabrication processes development for on III-nitride (III-N) heterojunction bipolar transistors (HBTs), heterojunction field-effect transistors (HFETs) and metal-insulator-semiconductor field-effect transistors (MISFETs) were performed. D.c, microwave and quasi-static I-V and C-V measurements were carried out to characterize the fabricated III-N transistors and diodes. The GaN/InGaN direct-growth HBTs (DG-HBTs) grown on free-standing GaN (FS-GaN) substrates demonstrated a high current gain (hfe) > 110, high current density (JC) > 141 kA/cm2, and high power density (Pdc) > 3 MW/cm2. The first III-N DG-HBT showing fT > 8 GHz and fmax > 1.3 GHz were also demonstrated on sapphire substrates. Recessed-gate AlGaN/AlN/GaN HFETs demonstrated Vth = 0 V with 0.17 V deviation across the sample. Baliga's figure of merit is 240 MW/cm2 was achieved. Current collapse was eliminated and the dynamic on-resistance was reduced by 67% after using a remote-oxygen-plasma treatment. Normally-off recessed-gate AlGaN/AlN/GaN MISFETs with Vth = 0.9 V were also fabricated with the remote-oxygen-plasma treatment. Low leakage current (< 1 pA/mm), high on-off ratio (> 2.2E11) are achieved. These achievements suggest that high-performance III-N transistors are very promising for high-power switching and microwave amplification. Findings concerning remaining process issues and implications for future research are also discussed.