A afinidade eletrônica (AE) é uma importante propriedade de átomos e moléculas, sendo definida como a diferença de energia entre a espécie neutra e seu respectivo íon negativo. Uma vez que a AE é uma fração muito pequena da energia eletrônica total das espécies neutra e aniônica, é necessário que tais energias sejam determinadas com elevado grau de precisão. A receita utilizada para o cálculo teórico acurado da AE atômica e molecular baseia-se na escolha de um conjunto adequado de funções de base juntamente com o emprego de teorias com altos níveis de correlação eletrônica. Durante o cálculo, o mesmo conjunto de base é utilizado para descrever o elemento neutro e seu respectivo ânion. Geralmente, os conjuntos de base para descrever propriedades de ânions possuem seus expoentes otimizados em ambiente neutro, e sua difusibilidade é conferida pela adição de funções difusas para cada valor de momento angular, l. A ideia deste trabalho está no desenvolvimento de conjuntos de base otimizados exclusivamente em ambiente aniônico para cálculos precisos de afinidade eletrônica. Deste modo, foram escolhidos os átomos para serem estudados: B, C, O e F. Os conjuntos de base foram gerados pelo Método da Coordenada Geradora Hartree-Fock, empregando a técnica da Discretização Integral Polinomial para a solução das integrais do problema. Os conjuntos de base obtidos são compostos por (18s13p) primitivas que foram contraídos para [7s6p] via esquema de contração geral proposto por Raffenetti. Os conjuntos contraídos foram polarizados para 4d3f2g e 4d3f2g1h, sendo os expoentes otimizados em ambiente CISD através do método SIMPLEX. Avaliaram-se as funções de base no cálculo de afinidades eletrônicas, tendo seus resultados comparados aos obtidos utilizando as bases aug-cc-pVQZ e aug-cc-pV5Z. A análise dos resultados demonstrou que os conjuntos de base difusos, gerados neste trabalho, reproduzem de maneira satisfatória as afinidades eletrônicas em relação ao valor experimental. Os conjuntos difusos polarizados para 4d3f2g1h apresentaram eficiência superior aos conjuntos aug-cc-pVQZ e, em alguns casos, aos conjuntos aug-cc-pV5Z que são consideravelmente maiores. / The electron affinity (EA) is an important property of atoms and molecules defined as the energy difference between the neutral species and its negative ion. Since the EA is a very small fraction of the total electronic energy of anionic and neutral species, one must determine these energies with high accuracy. The recipe used to calculate accurate atomic and molecular EAs is based on the choice of an adequate basis set and the use of high level of electron correlation calculations. In the computation of EAs, the same basis set is used to describe both neutral and negatively charged species. In general, the basis sets designed to describe anionic properties have their exponents optimized in neutral environment, and its diffuseness is acquired through the addition of diffuse functions for each angular momentum. The main idea of this work is to develop basis sets optimized exclusively in anionic environment that would be applied in accurate calculations of electron affinity. Thus, here follows the chosen atoms to be studied: B, C, O and F. The basis sets were generated by the Generator Coordinate Hartree-Fock Method through the Polynomial Integral Discretization Method. Basis sets were obtained containing (18s13p) primitives that were contracted to [7s6p] via Raffenetti\'s general contraction scheme. The contracted basis sets were polarized to 4d3f2g and 4d3f2g1h, and the exponents of polarization were optimized in a CISD environment through the Simplex algorithm. The basis sets quality was evaluated through the calculation of the electron affinities. The results were compared to those obtained by using the aug-cc-pVQZ and aug-cc-pV5Z basis-sets. The calculation showed that our diffuse basis sets reproduce satisfactorily the electron affinities when compared to the experimental data. The diffuse basis sets polarized to 4d3f2g1h showed to be more efficient than the aug-cc-pVQZ basis sets and in some cases also better than the aug-cc-pV5Z basis sets that are considerably larger.

In this thesis, the implementation of the incremental scheme for open-shell systems with unrestricted Hartree-Fock reference wave functions is described. The implemented scheme is tested within robustness and performance with respect to the accuracy in the energy and the computation times. New approaches are discussed to implement a fully automated incremental scheme in combination with the domain-specific basis set approximation. The alpha Domain Partitioning and Template Equalization are presented to handle unrestricted wave functions for the local correlation treatment. Both orbital schemes are analyzed with a test set of structures and reactions. As a further goal, the DSBSenv orbital basis sets and auxiliary basis sets are optimized to be used as environmental basis in the domain-specific basis set approach. The performance with respect to the accuracy and computation times is analyzed with a test set of structures and reactions. In another project, a scheme for the optimization of auxiliary basis sets for uranium is presented. This scheme was used to optimize the MP2Fit auxiliary basis sets for uranium. These auxiliary basis enable density fitting in quantum chemical methods and the application of the incremental scheme for systems containing uranium. Another project was the systematical analysis of the binding energies of four water dodecamers. The incremental scheme in combination with the CCSD(T) and CCSD(T)(F12*) method were used to calculate benchmark energies for these large clusters.

The electronic structure of the zero-gap two-dimensional graphene has a charge neutrality point exactly at the Fermi level that limits the practical application of this material. There are several ways to modify the Fermi-level-region of graphene, e.g. adsorption of graphene on different substrates or different molecules on its surface. In all cases the so-called dispersion or van der Waals interactions can play a crucial role in the mechanism, which describes the modification of electronic structure of graphene. The adsorption of water on graphene is not very accurately reproduced in the standard density functional theory (DFT) calculations and highly-accurate quantum-chemical treatments are required. A possibility to apply wavefunction-based methods to extended systems is the use of local correlation schemes. The adsorption energies obtained in the present work by means of CCSD(T) are much higher in magnitude than the values calculated with standard DFT functional although they agree that physisorption is observed. The obtained results are compared with the values available in the literature for binding of water on the graphene-like substrates. / Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich.

Treatment of the diethyl ester of o-phenylenebis(oxamic acid) (opbaH2Et2, 1) with 5/6 equivalent of MeNH2 in abs. EtOH results in the exclusive formation of the ethyl ester of o-phenylene(N′-methyl oxamide)(oxamic acid) (opooH3EtMe, 2) in ca. 50% yield. Treatment of 2 with four equivalents of [Me4N]OH followed by the addition of Cu(ClO4)2·6H2O gave [Me4N]2[Cu(opooMe)]·H2O (3A) in ca. 80% yield. As 3A appears to be a hygroscopic solid, the related [nBu4N]+ salts [nBu4N]2[M(opooMe)]·H2O (M = Cu (3B), Ni (4)) have been synthesized. By addition of two equivalents of [Cu(pmdta)(NO3)2] to a MeCN solution of 3B the novel asymmetric trinuclear complex [Cu3(opooMe)(pmdta)2](NO3)2 (5) could be obtained in ca. 90% yield. Compounds 2, 3A, 3B, 4 and 5 have been characterized by elemental analysis and NMR/IR spectroscopy. Furthermore, the solid state structures of 3A in the form of [Me4N]2[Cu(opooMe)]·MeOH (3A′), 3B in the form of [nBu4N]2[Cu(opooMe)] (3B′), 4 in the form of [nBu4N]2[Ni(opooMe)]·1.25H2O (4′) and 5 in the form of [Cu3(opooMe)(pmdta)2] (NO3)2·3MeCN (5′), respectively, have been determined by single-crystal X-ray diffraction studies. By controlled cocrystallization, diamagnetically diluted 3B (1%) in the host lattice of 4 (99%) in the form of single crystals have been made available, allowing single crystal EPR studies to extract all components of the g-factor and the tensors of onsite CuA and transferred NA hyperfine interaction. Out of these studies the spin density distribution of the [Cu(opooMe)]2− complex fragment could be determined. The magnetic properties of 5 were studied by susceptibility measurements versus temperature. An intramolecular J parameter of −65 cm−1 has been obtained, unexpectedly, as 5 should possess two different J values due to its two different spacers between the adjacent CuII ions, namely an oxamate (C2NO3) and an oxamidate (C2N2O2) fragment. This unexpected result is explained by a summarizing discussion of the experimentally obtained EPR results (spin density distribution) of 3B, the geometries of the terminal [Cu(pmdta)]2+ fragments of 5 determined by X-ray crystallographic studies and accompanying quantum chemical calculations of the spin density distribution of the mononuclear [Cu(opooMe)]2− and of the magnetic exchange interactions of trinuclear [Cu3(opooMe)(pmdta)2]2+ complex fragments. / Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich.

The electronic structure of the zero-gap two-dimensional graphene has a charge neutrality point exactly at the Fermi level that limits the practical application of this material. There are several ways to modify the Fermi-level-region of graphene, e.g. adsorption of graphene on different substrates or different molecules on its surface. In all cases the so-called dispersion or van der Waals interactions can play a crucial role in the mechanism, which describes the modification of electronic structure of graphene. The adsorption of water on graphene is not very accurately reproduced in the standard density functional theory (DFT) calculations and highly-accurate quantum-chemical treatments are required. A possibility to apply wavefunction-based methods to extended systems is the use of local correlation schemes. The adsorption energies obtained in the present work by means of CCSD(T) are much higher in magnitude than the values calculated with standard DFT functional although they agree that physisorption is observed. The obtained results are compared with the values available in the literature for binding of water on the graphene-like substrates. / Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich.

Treatment of the diethyl ester of o-phenylenebis(oxamic acid) (opbaH2Et2, 1) with 5/6 equivalent of MeNH2 in abs. EtOH results in the exclusive formation of the ethyl ester of o-phenylene(N′-methyl oxamide)(oxamic acid) (opooH3EtMe, 2) in ca. 50% yield. Treatment of 2 with four equivalents of [Me4N]OH followed by the addition of Cu(ClO4)2·6H2O gave [Me4N]2[Cu(opooMe)]·H2O (3A) in ca. 80% yield. As 3A appears to be a hygroscopic solid, the related [nBu4N]+ salts [nBu4N]2[M(opooMe)]·H2O (M = Cu (3B), Ni (4)) have been synthesized. By addition of two equivalents of [Cu(pmdta)(NO3)2] to a MeCN solution of 3B the novel asymmetric trinuclear complex [Cu3(opooMe)(pmdta)2](NO3)2 (5) could be obtained in ca. 90% yield. Compounds 2, 3A, 3B, 4 and 5 have been characterized by elemental analysis and NMR/IR spectroscopy. Furthermore, the solid state structures of 3A in the form of [Me4N]2[Cu(opooMe)]·MeOH (3A′), 3B in the form of [nBu4N]2[Cu(opooMe)] (3B′), 4 in the form of [nBu4N]2[Ni(opooMe)]·1.25H2O (4′) and 5 in the form of [Cu3(opooMe)(pmdta)2] (NO3)2·3MeCN (5′), respectively, have been determined by single-crystal X-ray diffraction studies. By controlled cocrystallization, diamagnetically diluted 3B (1%) in the host lattice of 4 (99%) in the form of single crystals have been made available, allowing single crystal EPR studies to extract all components of the g-factor and the tensors of onsite CuA and transferred NA hyperfine interaction. Out of these studies the spin density distribution of the [Cu(opooMe)]2− complex fragment could be determined. The magnetic properties of 5 were studied by susceptibility measurements versus temperature. An intramolecular J parameter of −65 cm−1 has been obtained, unexpectedly, as 5 should possess two different J values due to its two different spacers between the adjacent CuII ions, namely an oxamate (C2NO3) and an oxamidate (C2N2O2) fragment. This unexpected result is explained by a summarizing discussion of the experimentally obtained EPR results (spin density distribution) of 3B, the geometries of the terminal [Cu(pmdta)]2+ fragments of 5 determined by X-ray crystallographic studies and accompanying quantum chemical calculations of the spin density distribution of the mononuclear [Cu(opooMe)]2− and of the magnetic exchange interactions of trinuclear [Cu3(opooMe)(pmdta)2]2+ complex fragments. / Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG-geförderten) Allianz- bzw. Nationallizenz frei zugänglich.

In this thesis, the implementation of the incremental scheme for open-shell systems with unrestricted Hartree-Fock reference wave functions is described. The implemented scheme is tested within robustness and performance with respect to the accuracy in the energy and the computation times. New approaches are discussed to implement a fully automated incremental scheme in combination with the domain-specific basis set approximation. The alpha Domain Partitioning and Template Equalization are presented to handle unrestricted wave functions for the local correlation treatment. Both orbital schemes are analyzed with a test set of structures and reactions. As a further goal, the DSBSenv orbital basis sets and auxiliary basis sets are optimized to be used as environmental basis in the domain-specific basis set approach. The performance with respect to the accuracy and computation times is analyzed with a test set of structures and reactions. In another project, a scheme for the optimization of auxiliary basis sets for uranium is presented. This scheme was used to optimize the MP2Fit auxiliary basis sets for uranium. These auxiliary basis enable density fitting in quantum chemical methods and the application of the incremental scheme for systems containing uranium. Another project was the systematical analysis of the binding energies of four water dodecamers. The incremental scheme in combination with the CCSD(T) and CCSD(T)(F12*) method were used to calculate benchmark energies for these large clusters.

Substitutional dopants in III-V semi-conductors, such as Si atoms in GaAs, are of great interest for the applications in transistors, Schottky diodes, and doping super-lattices which have been widely employed to control the electrical properties of semi-conductors. Although Si doped GaAs systems have been intensively investigated theoretically and experimentally in the last several decades, some properties are still debated. In order to give a further explanation of Si doped GaAs systems, we systematically studied DX center in bulk GaAs and in GaAs(110), as well as the relative stabilities of different charged systems for Si atom replacing Ga atom at the substitutional site near GaAs(110) surface from first principles ground state method. We show that DX centre is a metastable state in bulk GaAs and completely unstable in the top few layers of GaAs(110). When Si atom replaces Ga atom at the surface, Charge states have an important influence on the stability of the system, and the additional charge is mainly concentrated on the Si atom for charged system. In addition, we studied the STM images of clean GaAs(110) and charged Si:GaAs(110) by employing Tersoff-Hamann approximation. The calculated STM images are in good agreement with experimental results. We show that at the positive bias voltage the positively charged Si atom presents a bright feature while the negatively charged Si atom shows a dark feature. In a semi-conductor, all bands are either completely full or completely empty. It is well known that DFT underestimates the band gaps of semi-conductors, a simple rigid shift can be used to correct the band energies of semi-conductors. Unlike semi-conductor, the fermi energies of metals lie in some bands. Furthermore, it turned out that some noble metals such as Cu and Ag depend on the considered band and k point , therefore, the so-called scissors operator can not be used for the metallic systems. The most successful approach within theoretical method for these metals is the many body perturbation theory. On the other hand, an interesting study for metals is quasi-particle excitations, which play an important role in a rich variety of physical and chemical phenomena such as energy transfer in photochemical reaction, desorption and oxidation of molecules at surfaces, spin transport within bulk metals, across interfaces, and at surfaces. One of the crucial properties of quasi-particle excitation is their lifetimes which determine the duration of these excitations. We carried out the calculations of quasi-particle band-structures and lifetimes for noble metals Cu and Ag within the GW approximation. For Cu, both the calculated positions of the d bands and the width of the d bands is within 0.1 eV compared to the experimental results. For Ag, partial core correction should be included in the pseudo-potential to get reliable positions of the d bands. The calculated lifetime agree with the experiment in the energy region away from the Fermi level, but deviates from the experimental results near the Fermi level where short range interactions which GW approach fails to describe play an important role. For a better description of the lifetime near the Fermi level, higher terms beyond the GW approximation in the many body perturbation theory need to be considered. In addition, the image potential state lifetimes in Cu(100) have been calculated using GW approximation based on the localized Gaussian basis set, and the calculated n=1, 2 imagepotential state lifetimes are in good agreement with experimental results.

The ability of physics to provide an understanding of our Universe lies in the essential interrelation between experiment and theory. But physics does not provide us only reliable representations of the causes acting in nature. Its powerful experimental devices and theoretical methods are the underlying reason of the explosive technological development of our time. LiNbO3 and LiTaO3 represent only one example of the essential impact of both experimental and theoretical investigations on their technological applications. Particularly, LiNbO3 has been the subject of many experimental studies due to its applications in electro-optic and integrated optical devices. Also, the doped LiNbO3 with rare-earth and transition metals could be used, for instance, as a material for tunable lasers. The previous theoretical studies devoted to LiNbO3 and LiTaO3 focused on their electronic structure, being an attempt to understand the microscopic origin of the paraelectric-to-ferroelectric phase transition of these materials. The ab initio lattice dynamics investigations performed so far were mainly aimed to identify the role of the individual atoms vibrations in the energetic of the phase transition. The lack of a reliable model for the zone-center lattice dynamics in these compounds motivated us to investigate this issue by means of ab initio frozen-phonon calculations. On the background of the obtained phonon frequencies and eigenvectors, we unambiguously identified all zone-center modes for LiNbO3 and the A1 ones for LiTaO3. Due to the above mentioned enlargement of the technological applications of LiNbO3 by doping with various ions, we focused on the analysis of the ground-state properties of this material when doped with Fe and Cr. Even if the theoretical approach used in our calculations is not predictive with respect to the optical properties of the physical systems in study, a certain insight on this problem could be gained from the analysis of the effect of the atomic positions relaxation on the impurities energy levels localized in the optical band gap.

I present and discuss the results of calculations ofelectronic structures of perfect and defective CaF2 and BaF2 crystals. These are based on the ab initio Hartree-Fock method with electron correlation corrections and ondensity-functional theory calculations with different exchange-correlation functionals, including hybrid exchange techniques.The defective systems include F centers, M centers, O-V dipoles, Hydrogen impurities and H centers.