Aplicações em ambientes expostos a elevados níveis de radiação ionizante impõem uma série de desafios ao desenvolvimento de projetos de circuitos integrados na tecnologia Complementary Metal–Oxide–Semiconductor (CMOS), uma vez que circuitos CMOS estão sujeitos às falhas transientes oriundas de radiação externa. Num circuito do tipo CMOS, as áreas sensíveis aos efeitos da incidência de partículas ionizantes são as regiões dreno-substrato reversamente polarizadas, existentes nos transistores em regime de corte (VARGAS; NICOLAIDIS, 1994). Com o avanço tecnológico e consequente diminuição das dimensões dos dispositivos semicondutores, estes efeitos degradantes tornam-se uma preocupação constante devido às menores características físicas dos transistores (WANG et al., 2007). Os circuitos integrados apresentam, durante a sua vida útil, um processo de degradação das suas características iniciais. Assim, a esse processo de degradação também chamamos de envelhecimento (aging). É um processo lento e cumulativo provocado por todos os mecanismos que acabam por alterar os parâmetros físicos e eléctricos dos circuitos, diminuindo o seu tempo de vida útil (FU; LI; FORTES, 2008). Dentre os efeitos de variabilidade temporal, os que mais têm causado interesse da comunidade científica são o Randon Telegraph Noise (RTN) com sua origem na atividade de traps (armadilhas) de interface e Single Event Transients (SET) com sua origem na radiação ionizante ao qual o circuito é exposto. Em relação aos efeitos de degradação destaca-se o efeito Bias Temperature Instability (BTI) (VALDUGA, 2012), que da mesma forma que o RTS, tem sua origem vinculada aos efeitos das traps.Modelos padrão para simulação elétrica de circuitos não levam em consideração os efeitos causados por armadilhas de cargas tais como Bias Temperature Instability (BTI) e Random Telegraph Noise (RTN). Tais variabilidades em nível de dispositivo podem causar perda de confiabilidade, como por exemplo, o surgimento de Propagation-Induced Pulse Broadening (PIPB). Conforme o escalonamento (scaling) tecnológico, a velocidade das portas lógicas aumenta e os SETs podem ser propagados através de circuito combinacional e, inclusive, sofrer alargamento, caso a largura do pulso transiente supere um valor mínimo crítico que depende da tecnologia (DODD et al., 2004), caracterizando assim um PIPB. Com base nisso, técnicas de injeção de falhas usadas em circuitos complexos não se mostram eficientemente previsíveis, levando a uma subestimativa da sensibilidade de circuitos à propagação de SETs. Com a utilização de um simulador elétrico que agrega a análise de BTI, temos melhores estimativas dos efeitos de PIPB na degradação de um circuito, que pode provocar violações de temporização em sistemas síncronos. Dessa forma, pode-se então trabalhar em uma projeção do circuito de forma a torná-lo mais robusto em relação aos efeitos de envelhecimento e na proteção às falhas transientes. Com base no que foi anteriormente apresentado, este trabalho analisa o comportamento de circuitos através de simulações elétricas de radiação ionizante, permitindo avaliações da suscetibilidade e confiabilidade de circuitos integrados aos efeitos de falhas transientes. Para a realização destes experimentos, foram realizadas simulações elétricas considerando-se os efeitos de envelhecimento. Para uma cadeia lógica de 2000 inversores sequencialmente dispostos na tecnologia 32nm pode-se prever que o pulso transiente está sujeito a um alargamento de sete vezes sua largura inicial no momento da incidência, para transistores em suas dimensões mínimas. A partir da proposta apresentada, pode-se determinar a possibilidade de alargamento ou atenuação de um SET ao longo do circuito de maneira eficiente para que as devidas precauções possam ser tomadas. / Applications in environments exposed to high levels of ionizing radiation impose a number of challenges for the development of integrated circuit designs in CMOS technology. CMOS circuits are vulnerable to transient faults from external radiation. In a CMOS circuit, areas sensitive to the effects of ionizing particle incidence are as reverse polarized drain-substrate regions in the transistors at cut-off (VARGAS; NICOLAIDIS, 1994). The technological advance and consequent downscaling of semiconductor devices, these degrading factors become a constant concern due to the higher vulnerability to transient faults (WANG et al., 2007). The integrated circuits have during their useful life a process of degradation of their initial characteristics. Thus, this process of degradation is also called aging. It is a slow and cumulative process caused by all the mechanisms that end up changing the physical and electrical parameters of the circuits, decreasing their useful timing life (FU; LI; FORTES, 2008). Among the temporal variability effects, the Randon Telegraph Noise (RTN) with its origin in the activity of traps (interface traps) and Single Event Transients (SET) with their origin in the ionizing radiation circuit is exposed. In terms of the effects of degradation, the Bias Temperature Instability (BTI) effect (VALDUGA, 2012) stands out, which, like the RTS, has its origin linked to the effects of the traps. Standard electrical simulation models do not take into account the effects caused by charged traps such as Bias temperature instability (BTI) and random telegraph noise (RTN). Such device-level variability can cause reduced reliability, for example, the Propagation-Induced Pulse Broadening (PIPB). According to the technological scaling, the speed of the logic gates increases and the SETs can be propagated through a combinational circuit and even may suffer broadening if the transient pulse width exceeds a critical minimum value that depends on the technology (DODD et al., 2004 ), characterizing a PIPB. Based on this, fault injection techniques in complex circuits are not efficiently in predicting, leading to an underestimation of circuit sensitivity to propagation of Single Event Transients (SETs). Using an electrical simulator that aggregates a BTI analysis, we have better estimates of PIPB effects on circuit degradation, which may lead to timing violations in synchronous systems. Then we can put effort in circuit design in order to make it more robust regarding to aging effects and transient faults protection. Based on what has been previously presented, this thesis analyzes the behavior of circuits through electrical simulations of ionizing radiation, allowing susceptibility and reliability evaluations of integrated circuits to the effects of transient faults using electrical simulations. For the accomplishment of these experiments, electrical simulations were performance considering the effects of aging. For a logic chain of 2000 inverters sequentially arranged in the 32nm technology it can be predicted that the transient pulse is subjected to a broadening of seven times its initial width at the time of incidence for transistors with minimum dimensions. From the analysis presented, we can evaluate the possibility of broadening or shrinking of SETs thought the circuit in an efficient way to improve radiation-hardening techniques.

Um sistema de diagnóstico por espectroscopia no visível foi implantado no tokamak TBR-I. O diagnóstico consiste de um espectrógrafo (do tipo Czerny-Turner), um sistema de acoplamento óptico e um detetor multicanal (MCP). O diagnóstico foi usado para observar e identificar impurezas presentes no plasma do TBR-I. As principais impurezas observadas foram oxigênio (O-II) e nitrogênio (N-II). Foi feito um estudo no alargamento das linhas do hidrogênio e dos íons para se obter a temperatura a partir do efeito Doppler. As intensidades das linhas espectrais foram observadas de descarga em descarga. / A visible spectroscopic diagnostic was implemented on TBR-I tokamak. The diagnostic system consist of a 1,5 m spectrograph (Czerny-Turner type), an optical coupling system and a microchannel plate (MCP) detector. The diagnostic system was used to examine and document the impurity content of the plasma in TBR-I. The main impurities discovered were oxygen (O-II) and nitrogen (N-II). Line broadening experiments were performed on hydrogen and ions to obtain the temperatures using Doppler broadening effects. The intensities of the spectral lines were measured on a shot to shot basis.

This project aims to determine the solar Mg abundance with two infrared spectral lines: MgI λ10811 and λ10965. Downloaded line data from VALD are updated with modern values for the oscillator strengths and van der Waals damping parameters, the latter obtained through ABO theory. Utilizing SME, the Mg abundances of synthetic spectra are fitted with respect to a solar atlas. The derived abundance for varied turbulence configurations is found to be between logAMg+12 = 7.40–7.52, which is slightly lower than meteoric and 3D-modeled values. Suggested improvements would be to consider the effects of NLTE and line blending.

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No description available.

Diversifying the engineering workforce has been a national imperative for several decades. The increased participation of Black students in engineering is commonly identified as a crucial area for improvement. Yet, the rates of engineering degree completion are slowing for Black women in particular. In 2015, less than one percent of all U.S. engineering bachelor's degrees were awarded to Black women. To support broadening participation efforts, I use an anti-deficit approach to examine the career orientations and mobility patterns of Black women working in computing and engineering roles in the tech industry. By characterizing the different career motivations, strategies, and points of transition in the careers of a diverse sample of Black women, I sought to disaggregate the Black women's engineering and computing career experiences—particularly as it relates to how and why they move into, around and out of roles in the tech industry. Using a qualitative multi-case study, I conducted a multi-level career mobility analysis on secondary data and user-generated social media artifacts to extend theory on career orientations and talent management to help normalize "non-traditional" career trajectories. The study findings are useful to inform the next generation of Black women interested in tech on the different ways to approach and achieve subjective career success and satisfaction in engineering and computing fields. In this dissertation work, I discuss how the varied insights of Black women's career experiences in tech can be leveraged for practitioners and industry leaders to broaden the participation (e.g., to attract, retain and better support) of students and employees by identifying their career orientations and then using that to inform career preparation and development that aligns with different engineering and computing career outlooks. / Doctor of Philosophy / The lack of role models is a hindrance for aspiring Black women engineers and their decisions to continue choosing engineering. The lack of representation of Black women in industry similarly presents obstacles for their career advancement. Because neither role models or representation can be increased in retrospect, it is imperative to study and highlight the visibility of the Black women engineers currently practicing engineering and bring awareness to their career experiences in industry to better inform recruitment and retention efforts. The purpose of this qualitative multi-case study is to describe the varied career orientations of Black women working as engineers in Tech and to link their career orientations to their career outcomes. To support broadening participation efforts, this research uses an anti-deficit approach to examine the career mobility patterns of Black women working in computing and engineering roles in the Tech industry. Using a curated secondary data set based on social media artifacts and user generated data, this study characterizes the different career motivations, strategies, and points of transition in the careers of a diverse sample of Black women. In efforts to disaggregate Black women's engineering and computing career experiences, ten perspectives on how and why Black women move into, around and out of roles in the tech industry were examined. The analysis revealed that participants' career orientations were differentially motivated by needs, talents and or values which influenced how participants made career related decisions. Additionally, both physical and psychological mobility of participants was examined and then compared in the cross-case analysis to derive six unique career archetypes that were useful in characterizing the career challenges and aspirations in participants' lived career experience. This study aims to normalize "non-traditional" career trajectories and inform the next generation of Black women interested in Tech on the different way(s) to approach and achieve career success and satisfaction in engineering and computing fields. In addition, study findings can be leveraged by human resource personnel and career managers to anticipate common career challenges based on individual employee career orientations, and align better reward structures and policies to support a wider range of employee career outlooks. The study emphasizes the strategies and outlooks critical for Black women's success and satisfaction to support their continued participation in the engineering and computing workforce.

Many universities across the United States have been experiencing an increased demand for computer science majors. Adjusting curriculum to meet increased demand runs the risk of damaging ongoing efforts to broaden participation in computer science. To manage growth, and increase the representation of women and underrepresented minorities in the field, we must first understand current patterns for participation, and factors that may impact access and persistence. Universities with common first-year engineering programs present an opportunity for addressing some of the barriers that have traditionally limited access to computer science to certain groups. In particular, common first-year programs could provide early positive experiences with computer programming which encourage more students to consider computer science as a viable major. To better understand how a common first-year engineering program may impact matriculation and persistence in computer science, I conducted studies to identify high-level patterns of participation in computer science, as well as how students experience programming instruction in an introductory engineering course. All studies share the same context: a large public research institution with a common first-year engineering program. Results indicate that women are leaving computer science at all points of the curriculum, contributing to a reduced representation of women earning CS degrees. In contrast, URM and first-generation students have higher representation at graduation than when declaring major interest before the start of their first year. / Doctor of Philosophy / Many universities across the United States have been experiencing an increased demand for computer science majors. Adjusting curriculum to meet demand runs the risk of damaging efforts to increase the diversity of the computer science workforce. To manage growth and increase the representation of women and underrepresented minorities (students who are not white or East Asian) in the field, we must first understand who currently studies computer science, and factors that lead to their success in the major. Universities with general first-year engineering programs present an opportunity for addressing some of the barriers that have traditionally discouraged women and underrepresented minorities from pursuing computer science. In particular, these programs could provide early positive experiences with computer programming which encourage more students to consider computer science as a possible major. To better understand how experiences during students’ first-year transition to college may impact decisions to major in computer science, I conducted studies to explore who enters computer science, and how they succeed in the major, as well as how students experience programming instruction in an introductory engineering course. All studies share the same context: a large public research institution with a general first-year engineering program. Results indicate that women are leaving computer science at all points of the curriculum, contributing to a reduced representation of women earning CS degrees. In contrast, underrepresented minority students and students with parents who did not receive a college degree, make up a higher percentage in the group graduating with a CS degree than in the group who declare CS as their first major.

Neste trabalho foi medido o alargamento Doppler de uma aniquilação elétron pósitron com o uso de um filtro angular. O Filtro angular reduz, substancialmente, a detecção de fótons provenientes de aniquilações de elétrons com baixo momento, enfatizando, desta forma, a contribuição de aniquilações com elétrons fortemente ligados. Foram medidos os espectros de coincidência para os ângulos de corte de 0,28°, 0,42° e 1.2°. Os resultados obtidos mostram que, conforme se aumenta o ângulo de corte, há uma redução das aniquilações com elétrons de valência em proporção muito maior do que para elétrons fortemente ligados. Foi determinada a transmissibilidade do filtro em função do ângulo entre as direções de emissão dos gamas, levando em conta todos os elementos do arranjo experimental para cada ângulo crítico, assim como a distribuição espacial da atividade da fonte radioativa. Um modelo simples foi utilizado para estimar teoricamente a dependência da dispersão da energia em função do ângulo de corte. Este modelo permitiu calcular o alargamento Doppler da radiação de aniquilação elétron pósitron. Os resultados obtidos mostram um bom acordo com os dados experimentais. Geralmente, estudos de aniquilação de pósitrons com elétrons fortemente ligados dependem de uma modelagem detalhada do espectro de coincidência, ou da medida dos fótons provenientes da aniquilação em coincidência com elétrons Auger. O filtro angular, desenvolvido neste trabalho se coloca como uma boa alternativa a estes métodos. / This work reports the measurement of the Doppler broadening of the electron-positron annihilation radiation using an angular filter. The angular filter substantially reduces the number of detected gamma-rays from positron annihilation with low momentum electrons, therefore emphasizing the contribution of bound electron. Four coincidence measurements of the emitted gamma-rays were done with arrangements corresponding to critical angles of 0.28°, 0.42°, 1.2°. The obtained results show that the relative intensity of annihilation with valence electrons decreases as the critical angle increases. The filter transmissibility as a function of the angle between the two gamma-rays emission directions was determined taking into account all the elements of the experimental arrangement for every critical angle as well as the spatial distribution of the source activity. A simple model was used to theoretically estimate the dependence of the energy dispersion on the critical angle. The model allows us to calculate the Doppler broadening of the electron-positron annihilation radiation, and the obtained results show good agreement with the experimental data. Usually, the study of positrons annihilation with inner electrons requires good detectors\' energy resolution and depends on either sophisticated modeling and statistical analysis of the coincidence spectra or the measurement of the annihilation gamma-rays in coincidence with Auger electrons. The use of the angular filter developed in this work is a good alternative to those procedures.

Aborda-se, nesse trabalho, o fenômeno de envelhecimento de transistores MOS por bias temperature instability (BTI), relevante fator de degradação da confiabilidade e de redução do tempo de vida de circuitos integrados CMOS. Uma nova modelagem matemática determinística para BTI é introduzida, proporcionando, rapidamente, informação acerca do desvio na tensão de limiar de um transistor em decorrência da ação de BTI. O modelo é, então, implementado em uma ferramenta comercial SPICE, com o intuito de se verificarem, através de simulações transientes, os efeitos de BTI em circuitos CMOS; nesse sentido, a abordagem determinística representa um enorme avanço em relação à modelagem estocástica tradicional, que, muitas vezes, não pode ser aplicada em simulações transientes de circuitos complexos, devido ao seu vultoso custo computacional. O fenômeno de alargamento de pulso induzido pela propagação (PIPB) de single event transients (SETs), verificado experimentalmente na literatura, é estudado e tido como resultado da ação de BTI nas bordas de subida e descida do pulso transiente. À vista disso, simula-se a propagação de um pulso SET injetado na entrada de uma cadeia de 10000 inversores lógicos de tecnologia PTM bulk 90nm, verificando a dependência do alargamento de pulso com a tensão de alimentação, com o tempo de estresse DC anterior à aplicação do pulso e com a frequência do sinal de entrada. O aumento do atraso de portas lógicas em decorrência da ação de bias temperature instability é abordado, também, através da simulação da aplicação de um pulso nas entradas de uma porta NAND, medindo-se a variação do tempo de atraso de propagação devido à inserção da modelagem matemática para BTI. Utiliza-se novamente o modelo de transistores PTM bulk 90nm, e apuram-se os efeitos da variação da tensão de alimentação e do tempo de estresse DC no tempo de atraso de propagação. Por fim, as disparidades na variação do atraso para as bordas de subida e descida de pulsos lógicos de nível alto-baixo-alto (“101”) e baixo-alto-baixo (“010”) são verificadas, sendo explicadas em termos do diferente impacto de BTI para os períodos de estresse e de relaxação e, também, para transistores PMOS e NMOS. / This work addresses the aging of MOS transistors by bias temperature instability (BTI), which is a key factor to the degradation of the reliability and of the lifetime of CMOS integrated circuits. A novel deterministic mathematical model is presented, providing fast information about the impact of BTI in the transistors threshold voltage shifts. The model is implemented in a commercial SPICE tool, in order to verify the effects of BTI in CMOS circuits through transient simulations; in this sense, the deterministic approach represents a great advance compared to the traditional stochastic modelling, that may result in prohibitively long transient simulations for complex circuits, due to its huge computation cost. The phenomenon of propagation induced pulse broadening (PIPB) of single event transients (SETs), verified experimentally in the literature, is studied and understood as the result of the BTI effect on the rising and falling edges of the transient pulse. Therefore, the propagation of a SET injected in the input of a 10,000-inverters chain is simulated, using the PTM bulk 90nm technology model, verifying the dependence of the pulse broadening on the supply voltage, on the DC stress time previous to the application of the pulse and on the input signal frequency. The increase of the propagation delay of logic gates due the action of bias temperature instability is also studied through the simulation of the injection of a pulse in the inputs of a NAND gate, and the variation of the propagation delay time due to the BTI effect is evaluated. The PTM bulk 90nm model is used once again, and the outcome of variations on the supply voltage and on the DC stress time on the propagation delay is measured. Finally, the disparities on the delay variation for the rising and falling edges of high-low-high (“101”) and low-high-low (“010”) input logic pulses are verified, and they are explained as the result of the different impact of BTI for the stress and recovery periods and also for PMOS and NMOS transistors.

Résumé : Ce travail avait pour but de contribuer à la détermination précise des paramètres de raies du disulfure de carbone en vue d'applications atmosphériques. Il s'agissait de déterminer théoriquement et expérimentalement les coefficients d'élargissement collisionnel de raies de la bande gamma 3 du disulfure de carbone perturbé par l'air atmosphérique ainsi que leur dépendance en température. Pour cela, nous avons déterminé les coefficients d'élargissement collisionnel du disulfure de carbone perturbé par l'azote, l'oxygène et enfin par l'argon, principaux composants de l'air atmosphérique, aussi bien que leur dépendance en température. En outre, nous avons déterminé théoriquement et expérimentalement les coefficients d'auto élargissement collisionnel de raies de la bande gamma 3 - gamma 1 du disulfure de carbone, à température ambiante. La dépendance vibrationnelle des largeurs collisionnelles étant négligeable, les résultats sont valables quel que soit le niveau supérieur de la transition. Enfin, nous avons déterminé les intensités absolues de quelques raies de la bande gamma 3 - gamma 1 du disulfure de carbone qui nous ont permis de mettre en exergue une des applications atmosphériques des paramètres de raie mesurés en laboratoire. Pour la partie expérimentale, un spectromètre diode-laser haute résolution (5x10-4cm-1) a été utilisé pour enregistrer les différents spectres. De ces derniers, nous avons déterminé les différents paramètres de raie d'absorption en ajustant aux profils expérimentaux des modèles de profils théoriques. Du point de vue théorique, les différents coefficients d'élargissement collisionnel ont été calculés sur base du formalisme semi-classique d'Anderson-Tsao-Curnutte amélioré par J. Bonamy et D. Robert, moyennant quelques modifications pour accorder les valeurs à celles mesurées en laboratoire. Ceci a permis de valider les différents potentiels d'interaction pour les différents systèmes moléculaires considérés. Abstract The purpose of this thesis was to contribute to the accurate determination of line parameters of carbon disulfide for atmospheric applications. We have determined experimentally as well as theoretically the collisional broadening coefficients of lines in the gamma 3 band of carbon disulfide perturbed by the atmospheric air and their temperature dependence. To this end, we determined collisional broadening coefficients, as well as their temperature dependence, of carbon disulfide diluted in nitrogen, oxygen and argon; the main components of the atmospheric air. In addition, we determined the self broadening coefficients of lines in the gamma 3 - gamma 1 band of carbon disulfide at room temperature. As the vibrational dependence of collisional widths is negligible, our results are valid whatever the higher level of transition. Finally, we determined the absolute intensities of a few lines in the gamma 3 - gamma 1 band of carbon disulfide, which have enabled us to highlight one of the atmospheric applications of line parameters measured in the laboratory. For the experimental part, a high resolution diode-laser spectrometer (5x10-4cm-1) was used to record the different spectra. Of these, we determined the parameters of absorption line by adjusting theoretical lineshape models to experimental profiles. From a theoretical point of view, different collisional broadening coefficients were calculated on the basis of semi classical formalism of Anderson-Tsao-Curnutte improved by J. Bonamy and D. Robert, with some modifications to make the calculated values more consistent with those measured. This enabled us to validate the different potentials of interactions for the different molecular systems considered.