Due to continued transistor scaling, work function tuning of metal gates has become important for advanced CMOS applications. Specifically, this research has been undertaken to discover the tuning of the MoxSiyNz gate work function through the incorporation of nitrogen. Metal Oxide Semiconductor (MOS) capacitors were fabricated using thermal SiO2 as gate oxide on lightly doped p-type Si wafer. A molybdenum silicide (MoSi2) target was reactively sputtered at 10mTorr in presence of N2 and Ar. The gas flow ratio, RN = N2/ (N2+Ar), was adjusted to vary the nitrogen concentration in MoSiN films. The gate work function (Фm) was extracted from capacitance-voltage (CV) measurements using the VFB-tox method. Interfacial barrier heights were measured using internal photoemission (IPE) as an independent confirmation of the MoSiN gate work function. The work function was found to decrease linearly (from ~4.7eV to ~4.4eV) for increasing gas flow ratios (from 10% to 40%). Secondary ion mass spectrometry (SIMS) depth profiles suggested that the nitrogen concentration was relatively uniform throughout the film. X-Ray Photoelectron Spectroscopy (XPS) surface analysis showed a steady increase in the total nitrogen concentration (from ~20% to 32%) in these films as gas flow ratio was increased. These data suggests that the increase in nitrogen concentration in MoSiN films corresponds directly with the lowering of MoSiN work function. These results clearly demonstrate that the work function of MoxSiyNz can be varied ~0.3 eV by adjusting the nitrogen concentration.

Due to continued transistor scaling, work function tuning of metal gates has become important for advanced CMOS applications. Specifically, this research has been undertaken to discover the tuning of the MoxSiyNz gate work function through the incorporation of nitrogen. Metal Oxide Semiconductor (MOS) capacitors were fabricated using thermal SiO2 as gate oxide on lightly doped p-type Si wafer. A molybdenum silicide (MoSi2) target was reactively sputtered at 10mTorr in presence of N2 and Ar. The gas flow ratio, RN = N2/ (N2+Ar), was adjusted to vary the nitrogen concentration in MoSiN films. The gate work function (Фm) was extracted from capacitance-voltage (CV) measurements using the VFB-tox method. Interfacial barrier heights were measured using internal photoemission (IPE) as an independent confirmation of the MoSiN gate work function. The work function was found to decrease linearly (from ~4.7eV to ~4.4eV) for increasing gas flow ratios (from 10% to 40%). Secondary ion mass spectrometry (SIMS) depth profiles suggested that the nitrogen concentration was relatively uniform throughout the film. X-Ray Photoelectron Spectroscopy (XPS) surface analysis showed a steady increase in the total nitrogen concentration (from ~20% to 32%) in these films as gas flow ratio was increased. These data suggests that the increase in nitrogen concentration in MoSiN films corresponds directly with the lowering of MoSiN work function. These results clearly demonstrate that the work function of MoxSiyNz can be varied ~0.3 eV by adjusting the nitrogen concentration.

Electrochemical capacitors (ECs) have drawn much attention owing to their fast charging/discharging rate, and long lifetime up to millions of cycles. Applications of EC range from large scale transportation to miniaturized electronics. The research reported herein explores the development of an economical process for the synthesis of high performance electrode material for high power ECs. A two stage synthesis process which consists of electroplating of molybdenum oxide followed by thermal nitridation was developed. X-ray diffraction and X-ray photoelectron spectroscopy revealed the material to be Mo oxide with nitrogen substitution, Moz(O,N). In a three electrode system, the Moz(O,N) electrodes showed capacitance as high as 16 mF/cm2. Symmetric EC cells achieved state of the art time constant of 100 ms. Ultrahigh power ECs were demonstrated for the first time using Moδ(O,N) electrodes and SiWA-H3PO4-PVA electrolyte, achieving with 10 ms time constant one of the lowest time constants reported for EC.

Electrochemical capacitors (ECs) have drawn much attention owing to their fast charging/discharging rate, and long lifetime up to millions of cycles. Applications of EC range from large scale transportation to miniaturized electronics. The research reported herein explores the development of an economical process for the synthesis of high performance electrode material for high power ECs. A two stage synthesis process which consists of electroplating of molybdenum oxide followed by thermal nitridation was developed. X-ray diffraction and X-ray photoelectron spectroscopy revealed the material to be Mo oxide with nitrogen substitution, Moz(O,N). In a three electrode system, the Moz(O,N) electrodes showed capacitance as high as 16 mF/cm2. Symmetric EC cells achieved state of the art time constant of 100 ms. Ultrahigh power ECs were demonstrated for the first time using Moδ(O,N) electrodes and SiWA-H3PO4-PVA electrolyte, achieving with 10 ms time constant one of the lowest time constants reported for EC.

Thesis (M.S.)--Virginia Polytechnic Institute and State University, 1991. / Vita. Abstract. Includes bibliographical references (leaves 74-78). Also available via the Internet.

Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2002. / Includes bibliographical references (leaves 62-64). Also available in electronic version. Access restricted to campus users.

Thesis (M. Eng.)--Carleton University, 1988. / Also available in electronic format on the Internet.

Thesis (M. Eng.)--Carleton University, 1989. / Also available in electronic format on the Internet.

Thesis (Ph.D.)--Virginia Polytechnic Institute and State University, 1990. / Chairman: Fred C. Lee. Includes bibliographical references.

Thesis (M.Phil.)--Hong Kong University of Science and Technology, 2007. / Includes bibliographical references (leaves 146-149). Also available in electronic version.