Thesis (Ph.D.)--University of Western Australia, 2005.

Thesis (Ph. D.)--University of North Texas, Dec., 2007. / Title from title page display. Includes bibliographical references.

Mercury cadmium telluride is important in the detection of electromagnetic radiation in the eight to twelve micron atmospheric window for infrared imaging systems. High resolution infrared imaging systems use either large (256x256 element to 1024x1024 element) staring arrays or much smaller (1-6 element) scanned arrays in which the image is optically scanned across the detectors. In scanned arrays, high resolution and sensitivity may result in the scan direction not being parallel to the detector bias current. The response of an infrared detector to uniform illumination is investigated. It is found that variations in the detector thickness result in significant changes in output voltage. Scanned detectors are modeled in five different orientations; scan parallel to bias, scan opposite to bias, scan perpendicular to bias, and two orientations of the scan diagonal to the bias. The response is analyzed for two cases: 1) the size of the scanned radiation equal to the size of the detector and 2) when the pixel width is half of the width of the detector, but of equal length. Results of the simulation show that the fastest response occurs when the scan and bias are parallel. The largest response occurs when the scan direction is diagonal to the bias, but the response time is much slower than when the bias is parallel to the scan. Therefore, a tradeoff must be made between maximum signal and speed of response. Test detectors are being fabricated and will be tested at FLIR Systems Inc., Portland, Oregon, to confirm the model predictions. / Graduation date: 1992

[Truncated abstract] Infrared radiation detectors find application in a wide range of military and civilian applications: for example, target identification, astronomy, atmospheric sensing and medical imaging. The greatest sensitivity, response speed, and wavelength range is offered by infrared detectors based on HgCdTe semiconductor material, the growth and characterisation of which is the subject of this thesis. Molecular Beam Epitaxy (MBE) is a versatile method of depositing layers of semiconductor material on a suitable crystalline substrate. In particular, MBE facilitates the growth of multilayer structures, thus allowing bandgap engineered devices to be realised. By modulating the bandgap within the device structure it is possible to improve the sensitivity or increase the operating temperature of photodetectors when compared to devices fabricated on single layer material. Furthermore, dual-band detectors may be fabricated using multi-layered HgCdTe material. The bulk of this thesis is concerned with the development of the MBE process for multilayer growth, from modelling of the growth process to characterisation of the material produced, and measurement of photoconductive devices fabricated on these wafers. In this thesis a previously published model of HgCdTe growth by MBE is reviewed in detail, and is applied to the growth of double layer heterostructures in order to determine the optimum method of changing the mole fraction between layers. The model has been used to predict the change in the temperature of the phase limit when the mole fraction and growth rate change suddenly as is the case during growth of an abrupt heterostructure. Two options for growth of an abrupt heterostructure were examined (a) modulating the CdTe flux and (b) modulating the Te flux. The change in the phase limit temperature between the layers was calculated as being 4:1±C for option (a) and 5:2±C for option (b) when growing a Hg(0:7)Cd(0:3)Te/Hg(0:56)Cd(0:44)Te heterostructure

Thesis (Ph.D.)--University of Western Australia, 2005.

Thesis (Ph.D)--University of Western Australia, 2007.

Thesis (M.S.)--West Virginia University, 2000. / Title from document title page. Document formatted into pages; contains x, 72 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 69-72).

Orientador: Jaime Frejlich / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-14T11:06:50Z (GMT). No. of bitstreams: 1 Santos_TatianeOliveirados_D.pdf: 7708751 bytes, checksum: 103a28dbd9feff06d3555a0fc88ad4b7 (MD5) Previous issue date: 2009 / Resumo: Foi realizado o estudo de novos materiais fotorrefrativos através das técnicas Fotocon-dutividade Resolvida por Comprimento de Onda e Speckle-foto-fem. Dentre esses materiais encontram-se titanosillenitas com diferentes dopantes e os materiais fotorrefrativos do grupo II-VI como o telureto de c'admio (CdTe) e telureto de zinco (ZnTe), também dopados, e cujo interesse está no fato de terem uma banda proibida menor que as sillenitas, e serem bem mais rápidos que as sillenitas. O modelo matemático que descreve o efeito foto-fem com um padrão de "speckle" oscilante e de grande amplitude foi desenvolvido, tornando-se o modelo mais completo até hoje existente. O novo modelo prêve o aparecimento de um máximo no sinal de speckle-foto-fem para um determinado valor da amplitude normalizada sobre o tamanho do speckle d , em conformidade com os resultados experimentais. Verificou-se também, que a posição deste máximo depende fortemente da relação entre a condutividade no escuro e fo-tocondutividade (Rd). Através da técnica Fotocondutividade Resolvida por Comprimento de Onda foi estudado as amostras de BTO puro e dopado, CdTe e ZnTe dopados, onde foi possível identificar alguns estados localizados dentro da banda proibida destes materiais. A partir disto, alguns cristais, como o BTO, Cdte:V e CdTe:Ge foram selecionados para os experimentos de medidas de vibrações transversais utilizando a técnica speckle-foto-fem. Os experimentos de speckle-foto-fem foram, pela primeira vez, utilizados para caracterizar materiais fotorrefrativos, a partir da determinação do tempo de resposta e da estimativa da condutividade no escuro. / Abstract: A study of new photorefractive materials was performed through the techniques of wa-velength resolved photoconductivity and Speckle-photo-fem. Among this materials are the titanosillenites with different dopants and the group II-IV Photorefractive materials like the Cadmium telluride (CdTe) and the Zinc telluride (ZnTe), also doped, which are interesting for having a band gap smaller than that of the sillenites, and for being a lot faster than the sillenites. The mathematical model that describes the Photo-emf effect with an oscillating and high amplitude speckle pattern was developed, becoming the most complete model in existence. The new model predicts the presence of a maximum in the signal of speckle-photo-emf for a determined value of the amplitude normalized over the size of the speckle d , in conformity with the experimental results. Was also verified that the position of this maximum is strongly depen-dent on the relation between the dark conductivity and photoconductivity (Rd). Through the technique of wavelength resolved photoconductivity the samples of pure and doped BTO, CdTe and ZnTe were studied and it was possible to identify some localized states inside the band gap of those materials. From that, some crystals like the BTO, CdTe:V and CdTe:Ge were se-lected for the experiments on transversal vibration measurement using the Speckle-photo-emf technique. The speckle-photo-emf experiments were, for the first time, used to characterize photorefractive materials, from the determination of the response time and the estimate of their dark conductivity. / Doutorado / Ótica / Doutora em Ciências

Thesis. 1977. M.S.--Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. / MICROFICHE COPY AVAILABLE IN ARCHIVES AND ENGINEERING. / Includes bibliographical references. / M.S.

This work concerns the microstructure of CSS-grown CdTe layers used for CdTe/CdS solar cells. Particular attention is given to how the development of microstructure on annealing with CdCl(_2) may correlate with increases in efficiency. By annealing pressed pellets of bulk CdTe powder, it is shown that microstructural change does occur on heating the material, enhanced by the inclusion of CdCl(_2) flux. However, the temperature required to cause significant effects is demonstrated to be higher than that at which heavy oxidation takes place. The dynamics of this oxidation are also examined. To investigate microstructural evolution in thin-films of CdTe, bi-layers of CdTe and CdS are examined by bevelling, thus revealing the microstructure to within ~1 µm of the interface. This allows optical microscopy and subsequent image analysis of grain structure. The work shows that the grain- size, which is well described by the Rayleigh distribution, varies linearly throughout the layer, but is invariant under CdCl(_2) treatment. Electrical measurements on these bi-layers, however, showed increased efficiency, as is widely reported. This demonstrates that the efficiency of these devices is not dictated by the bulk microstructure. Further, the region within 1 µm of the interface, of similar bi-layers to above, is examined by plan-view TEM. This reveals five-fold grain-growth on CdCl(_2) treatment. Moreover, these grains show a considerably smaller grain size than expected from extrapolating the linear trend in the bulk. These observations are explained in terms of the pinning of the CdTe grain size to the underlying CdS, and the small grain size this causes. A simple model was proposed for a link between the grain-growth to the efficiency improvement. The study also examines the behaviour of defects within grains upon CdCl(_2) treatment provided the first direct evidence of recovery on CdCl(_2) treatment in this system. Finally, a computer model is presented to describe the evolution of microstructure during growth. This is shown to be capable of reproducing the observed variation in grain size, but its strict physical accuracy is questioned.