This thesis primarily deals with the concept of designing an antenna based device to harvest energy from Radio Frequency (RF) and using the harvested energy to sense the available Long Term Evolution (LTE) network in order for the Internet of Things (IoT) devices to connect to the network for the purpose of transmitting and receiving data. Secondarily the importance of this project is targeting how to conserve battery power in an IoT device and extend it’s lifetime. Research in the field of energy harvesting has been going on for a long time. Most of the researches concentrate on harvesting significant amount of energy to power up an entire device and so no one has ever thought of using the harvested RF energy to sense the availability of LTE network. This method of using antenna to sense network requires only a small amount of harvested energy. Due to this reason the proposed design works for a very low input received signal strength indicator (RSSI) as well, unlike higer RSSI required for other applications. The proposed design has three major sub-parts such as the (i) Antenna for the purpose of receiving the available ambient radio frequency. (ii) Matching circuit for the purpose of maximum power transfer between the antenna and the rectifier circuit. Finally (iii) rectifier which is used to convert the AC voltage into DC voltage. The device then measures the obtained voltage through the Analog to Digital Converter (ADC) pin in the Micro-Controlling Unit (MCU) available with the attached IoT device. The MCU then maps the harvested voltage into the corresponding analog voltage.Depending on the set threshold voltage the MCU can then advice whether or not to connect to the LTE network. The design implements matching circuit for the two LTE bands that are primarily in use in the European region i.e., band 3, 8 that work in 915, 1800 MHz frequency region respectively. In this way we can identify in which band the device is harvesting energy. The matching circuit also acts as a bandpass filter. For the design and production of the entire harvester device one needs adequate knowledge in the field of RF and Antennas and a high level knowledge in the field of electronics in order to run Simulations and to design Printed Circuit Boards (PCBs). Advanced Design Software (ADS) has been used to run all the simulations and Altium software for the design of PCBs. The final prototype is presented along with the casing and tested on the field in practical scenario. Antenna test chambers were used to test the performance of the antennas being used for the design. The prototype harvests RF energy and indicates whether or not to connect to the LTE network with the help of light emitting diode (LED). The uniqueness of the device is that it can detect signals as low as -110 dBm, this has been set as the threshold for the purpose of sensing LTE networks. / Denna avhandling behandlar primärt konceptet att använda antenner för att hämta energi från RF och att använda den insamlade energin för att känna av det tillgängliga LTE-nätverket för att IoT-enheterna ska kunna ansluta till nätverket för syftet med att överföra och ta emot data. Sekundärt Målet med av detta projekt är att spara batteri i en IoT-enhet och förlänga dess livslängd. Forskning inom området energiskörd har pågått under lång tid nu. De flesta av undersökningarna koncentrerar sig på att skörda betydande mängder energi för att driva en hel enhet och så ingen har någonsin tänkt på att använda den avkända RF-energin för att känna av tillgängligheten för LTE-nätverket. Denna metod för att använda antenn för att känna av nätverk kräver endast en liten mängd skördad energi. På grund av denna anledning fungerar den föreslagna designen även för en mycket låg ingång RSSI, till skillnad från högre RSSI som krävs för andra applikationer. Den föreslagna designen har tre huvuddelar, såsom (i) antennen för att ta emot den tillgängliga omgivande radiofrekvensen. (ii) Matchningskrets för maximal effektöverföring mellan antennen och likriktarkretsen. Slutligen (iii) likriktaren som används för att omvandla AC-spänningen till DC-spänning. Enheten mäter sedan den erhållna spänningen genom ADC-stiftet i MCU som finns tillgänglig med den anslutna IoT-enheten. MCU mappar sedan den genererade spänningen till motsvarande analoga spänning. Beroende på den inställda tröskelspänningen kan MCU sedan ge råd om att ansluta till LTE-nätverket eller inte. Konstruktionen implementerar matchningskrets för de två LTE-banden som primärt används i den europeiska regionen vilka är band 3, 7 som arbetar i 915 respektive 1800 MHz frekvensområdet. På så sätt kan vi identifiera i vilket band enheten hämtar energi i. Matchningskretsen fungerar också som ett bandpassfilter. För design och produktion av hela insamlingsenheten behöver man adekvat kunskap inom området RF och antenner och en hög nivå kunskap inom elektronikområdet för att kunna köra simuleringar och designa PCBs.ADS har använts för att köra alla simuleringar och Altium-mjukvara för design av PCBs. Den slutliga prototypen presenteras tillsammans med höljet och testas på fältet i praktiskt scenario. Antenntestkammare användes för att testa prestandan hos antennerna som användes för konstruktionen. Prototypen skördar RF-energi och indikerar om man ska ansluta till LTE-nätverket eller inte med hjälp av blinkande LED.Det unika med enheten är att den kan upptäcka signaler så låga som - 110 dBm, detta har satts som tröskel för avkänning LTE nätverk.

近年來，印刷電路板(printed circuit board, PCB)產業在台灣蓬勃發展，對台灣經濟表現有相當重要的影響；與此同時，產業內各廠商卻因內外環境變異等因素，而面臨日益激烈的競爭壓力。本研究針對產業前段的生產工廠(PCB manufacturing)從管理面探討問題來源，發現各廠商所導入的管理系統(MRP、ERP、SCM等)均缺乏現場排程(shop floor scheduling)功能，因此造成排程結果不具可行性，連帶導致管理系統的績效也未如預期理想。 　　為解決該產業所面臨的現場排程問題，本研究透過個案訪談方式，對產業特性深入了解，歸類此類問題為排程領域中的流程型工廠排程問題(flow shop scheduling)。 　　在求解過程中，本研究以總延遲時間(total tardiness)最小化為目標，並以禁忌搜尋法(tabu search)作為最佳化過程的演算法。於理論探討後，本研究亦實際建置一套排程系統，並以來自個案工廠的訂單資料實際求解，以評估此系統績效。

The topic of this dissertation is the derivation, development, and evaluation of novel hybrid algorithms for process control that use a limited number of measurements and that are suitable to operate in the presence of large amounts of process noise. As an initial step, affine and neural network statistical process models are developed in order to simulate the steady-state system behavior. Such models are vitally important in the evaluation, testing, and improvement of all other process controllers referred to in this work. Afterwards, fuzzy logic controller rules are assimilated into a mathematical characterization of a model that includes the modes and mode transition rules that define a hybrid hierarchical process control. The main processing entity in such framework is a closed-loop control algorithm that performs global and then local optimizations in order to asymptotically reach minimum bias error; this is done while requiring a minimum number of iterations in order to promptly reach a desired operational window. The results of this research are applied to surface mount technology manufacturing-lines yield optimization. This work achieves a practical degree of control over the solder-paste volume deposition in the Stencil Printing Process (SPP). Results show that it is possible to change the operating point of the process by modifying certain machine parameters and even compensate for the difference in height due to change in print direction.

Le projet industriel français MEGaN vise le développement de module de puissance à base de compostant HEMT en GaN. Une des application industrielle concerne l’aéronautique avec une forte contrainte en isolation galvanique (>100 kV/s) et en température ambiante (200°C). Le travail de thèse a été concentré sur une brique module de puissance (bras d’onduleur 650 V 30 A). L’objectif est d’atteindre un prototype de facteur de forme peu épais, 30 cm2 et embarquant l’ensemble des fonctions driver, alimentation de driver, la capacité de bus et capteur de courant phase. Cet objectif implique un fort rendement énergétique, et le respect de l’isolation galvanique alors que la contrainte en surface est forte. Le manuscrit, outre l’état de l’art relatif au module de puissance et notamment celui à base de transistor GaN HEMT, aborde une solution d’isolation de signaux de commande à base de micro-transformateur. Des prototypes de micro-transformateur ont été caractérisés et vieillis pendant 3000 H pour évaluer la robustesse de la solution. Les travaux ont contribué à la caractérisation de plusieurs composants GaN afin de mûrir des modèles pour la simulation circuit de topologie de convertisseur. Au sein du travail collaboratif MEGaN, notre contribution ne concernait pas la conception du circuit intégré (driver de grille), tout en ayant participé à la validation des spécifications, mais une stratégie d’alimentation du driver de grille. Une première proposition d’alimentation isolée pour le driver de grille a privilégié l’utilisation de composants GaN basse-tension. La topologie Flyback résonante avec clamp permet de tirer le meilleur parti de ces composants GaN mais pose la contrainte du transformateur de puissance. Plusieurs technologies pour la réalisation du transformateur ont été validées expérimentalement et notamment une proposition originale enfouissement du composant magnétique au sein d’un substrat polymère haute-température. En particulier, un procédé de fabrication peu onéreux permet d’obtenir un dispositif fiable (1000 H de cyclage entre - 55 ; + 200°C), avec un rendement intrinsèque de 88 % pour 2 W transférés. La capacité parasite d’isolation est réduite par rapport aux prototypes précédent. Deux prototypes d’alimentations à forte intégration utilisent soit les transistors GaN basse tension (2.4 MHz, 2 W, 74 %, 6 cm2), soit un circuit intégré dédié en technologie CMOS SOI, conçu pour l’application (1.2 MHz, 2 W, 77 %, 8.5 cm2). Le manuscrit propose par la suite une solution intégrable de mesure de courant de phase du bras de pont, basé sur une magnétorésistance. La comparaison expérimentale vis à vis d’une solution à résistance de shunt. Enfin, deux prototypes de convertisseur sont décrits, dont une a pu faire l’objet d’une validation expérimentale démontrant des pertes en commutation réduites. / The french industrial project MEGaN targets the development of power module based on GaN HEMT transistors. One of the industrial applications is the aeronautics field with a high-constraint on the galvanic isolation (>100 kV/s) and ambient temperature (200°C). The intent of this work is the power module block (3 phases inverter 650 V 30 A). The goal is to obtain a small footprint module, 30 cm2, with necessary functions such as gate driver, gate driver power supply, bulk capacitor and current phase sensor. This goal implies high efficiency as well as respect of the constraint of galvanic isolation with an optimized volume. This dissertation, besides the state of the art of power modules and especially the GaN HEMT ones, addressed a control signal isolation solution based on coreless transformers. Different prototypes based on coreless transformers were characterized and verified over 3000 hours in order to evaluate their robustness. The different studies realized the characterization of the different market available GaN HEMTs in order to mature a circuit simulation model for various converter topologies. In the collaborative work of the project, our contribution did not focus on the gate driver chip design even if experimental evaluation work was made, but a gate driver power supply strategy. The first gate driver isolated power supply design proposition focused on the low-voltage GaN HEMT conversion. The active-clamp Flyback topology allows to have the best trade-off between the GaN transistors and the isolation constraint of the transformer. Different transformer topolgies were experimentally performed and a novel PCB embedded transformer process was proposed with high-temperature capability. A lamination process was proposed for its cost-efficiency and for the reliability of the prototype (1000 H cycling test between - 55; + 200°C), with 88 % intrinsic efficiency. However, the transformer isolation capacitance was drastically reduced compared to the previous prototypes. 2 high-integrated gate driver power supply prototypes were designed with: GaN transistors (2.4 MHz, 2 W, 74 %, 6 cm2), and with a CMOS SOI dedicated chip (1.2 MHz, 2 W, 77 %, 8.5 cm2). In the last chapter, this dissertation presents an easily integrated solution for a phase current sensor based on the magnetoresistance component. The comparison between shunt resistor and magnetoresistance is experimentally performed. Finally, two inverter prototypes are presented, with one multi-level gate driver dedicated for GaN HEMT showing small switching loss performance.

This thesis deals with concept of universal frequency filter by application of a switched-capacitor functional block. The concept is based on the theory of switched-capacitor circuits and the theory of a design of classical frequency filters. The printed circuit board was designed based on the filter connection developed by using a software Eagle. The filter was implemented as a laboratory product. This product has been revitalized and the frequency response of all types of filters has been measured. The measured parameters were compared with the parameters set out in the technical documentation of functional block.

The Silicon Carbide Bipolar Transistor is a device that is barely brought into real application so far. It features very low conduction losses and a high power density. The application is in some points different and unusual in comparison to the mainstream power semiconductors as IGBTs or MOSFETs. The Silicon Carbide Bipolar Transistor, the SiC-BJT, is a current driven device and the effort in driving is uncommonly high. As an outcome of the present work it can be said that it is more like a shift of requirements from the power semiconductor power unit to the driver stage. With consideration of all system losses, including driving losses, the final unoptimized COSIVU prototype inverter system gained an increase of efficiency of 40-60% in comparison to the IGBT-based reference system dependent on the applied load points. In terms of reliability and possible failure modes, the SiC-BJT behaves differently from the mainstream devices. One result of the project is that the chips itself are quite robust but the packaging needs some improvements. Thermal impedance spectroscopy is a method for detecting possible deterioration in the cooling path of a device. A method for temperature estimation of the SiC-BJT during on-state will be presented in this work. The electronic hardware for thermal impedance spectroscopy has been developed to do the measurements in a non-laboratory setup in the inverter in real application. Furthermore, the hardware implementation was realized on a very small space for integration into an in-wheel motor inverter system. / Der Siliciumkarbid Bipolartransistor ist ein leistungselektronisches Bauelement, was bis heute kaum über Labor- und Forschungsprojekte hinaus anwendungsnah zum Einsatz kam. Er verfügt über sehr geringe Durchlassverluste und eine hohe Leistungsdichte. Seine Verwendung und Anwendung ist in mancher Hinsicht anders und unüblich im Vergleich zu den etablierten leistungselektronischen Bauelementen wie IGBT und MOSFET. Der Siliciumkarbid Bipolartransistor, also der SiC-BJT, ist ein stromgesteuertes Bauteil, weswegen der Aufwand für die Treiber sehr hoch ist. Die praktische Arbeit im Rahmen des Forschungsprojektes „COSIVU“ mit den SiC-BJTs in Verbindung mit dem fertigen integrierten Invertersystem hat unter anderem gezeigt, dass es mehr eine Verschiebung der Anforderungen von der Leistungselektronik hin zu den Treibern für die Leistungselektronik ist. Unter Betrachtung der Verluste des gesamten Systems, einschließlich der Motor-, Treiber- und Steuerverluste, hat das fertige Prototyp-Invertersystem, welches durchaus noch Potential zur Optimierung besaß, eine deutliche Verbesserung des Wirkungsgrades erreicht. Gegenüber dem auf IGBT basierenden Referenz-Invertersystem, hat das COSIVU Invertersystem eine Verbesserung des Wirkungsgrades um 40-60 % erreicht. Eine Erkenntnis aus dem Forschungsprojekt in Bezug auf Zuverlässigkeit und mögliche Fehler und Defekte ist, dass der Chip selbst zwar ziemlich robust ist, aber dass die Gehäuse-, Aufbau- und Verbindungstechnik angepasst und verbessert werden sollte. Thermische Impedanzspektroskopie ist eine Methode um Verschlechterungen im Kühlpfad eines leistungselektronischen Halbleiters zu erkennen, was ein Kriterium für die Alterung des Bauteils ist. Eine Methode zur Bestimmung der Sperrschichttemperatur von SiC-BJTs während des normalen Durchlassbetriebes wird in dieser Arbeit vorgestellt. Die Platine für die thermische Impedanzspektroskopie wurde entwickelt, um die Messung in einem laborfernen Aufbau in einer echten Inverteranwendung durchzuführen. Zudem wurden die Platinenaufbauten auf sehr kleiner Fläche realisiert. Die Integration musste nämlich sehr kompakt gestaltet werden, da es sich um ein „in-wheel“ Motor-Inverter-System handelt, was zum größten Teil innerhalb eines Fahrzeugrades untergebracht ist.

The diploma thesis deals with the design and implementation of the system that will control the water supply for the family house and its garden. The system aslo allows you to store a history that can be viewed via the web interface. The web interface also allows you to set system parameters and monitor the current status.