Even though there had been extensive research in Switching Mode Power Amplifier design their applications at industry level are quite limited. This is because a Fully-Integrated Switching Mode Power Amplifier using conventional active devices such as Bipolar Junction Transistors (BJT) or Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is challenging due to the inherent design challenges in the Switching Power Amplifier design. A Fully-Integrated Differential Class-F2,3 Power Amplifier design is explored for this Thesis research. This Power Amplifier has a maximum theoretical efficiency of 90.7% but this value is reduced because of the switching nature of the active device, parasitic effects associated with layout and the quality factor of the passive components used. Waveform shaping required for a Class-F Power Amplifier is done using the stray inductances within a non-ideal transformer instead of individual inductors. This techniques effective reduces the foot prints of two inductors for the tuning network design and make a Fully-Integrated solution more practical.

Due to the rapid development of telecommunication devices, operating speeds are getting faster and more power is being consumed by those devices. Therefore, there is a big concern on how to prolong the battery life in order to fit consumers’ needs. Power amplifiers (PA) at the front end of wireless equipment have drawn a big concern from engineers because of their large power consumption in the system. There is a lot research conducted on PA solutions for improving power-added efficiency (PAE) of amplifiers. PAE is a figure of merit representing how efficient the PA converts DC power to RF power. With PAE increased, the device is able to output the same amount of power with less DC power consumed. Non-linear Class-F and Class-F-1 PAs have drawn the most attention among all different classes of PAs from engineers because of their capability of outputting high power and providing good PAE. Class-F boosts up PAE by controlling the harmonic content at the output. Advanced Design System (ADS) from Agilent is used for design and simulation based on the ADS model of Cree’s CGH40010 high electron mobility transistor (HEMT). A high efficiency power amplifier is fabricated on RT/duroid 5870 high frequency laminate board. In this design, the harmonics at the input are controlled as well as the harmonics at the output. An input wave-shaping network is designed to shape the waveforms at the gate. In this case, the PAE is boosted 30% higher than the PA with only the output wave-shaping network. By terminating harmonics with proper impedances at the output, a square voltage waveform and a half-sine current waveform are obtained at the transistor drain terminal. The overlapping area between the voltage and current waveforms can be reduced as well as the active device power consumption. The final design operating at 1GHz produced a PAE of 89% with 38.35dBm output power in simulation and PAE of 78% with 38.7dBm output power as the result of the IEEE PA design contest. The thesis has shown the effectiveness of the Class-F PA to boost up PAE by preventing the 2nd and 3rd harmonic power from delivering to the load and shaping the waveforms at the transistor terminals. It also shows the benefit of using radial stubs in wave-shaping networks over open-circuit stubs.

This works demonstrates the feasibility of the inverse-Class-F harmonic tuning approach for mm-wave silicon PAs. This research addresses the challenges and limitations of the high efficiency inverse-Class-F PAs for mm-wave silicon technology. This work proposes different load networks to mitigate the challenges which are verified with implementations at different mm-wave frequencies with the highest power efficiency performances reported so far: PAE= 50% @ 24 GHz, PAE = 43% @ 41 GHz, and PAE = 23% @ 94 GHz. The design methodology and detailed analysis of the proposed load networks presented and verified with implementation and measured results. / Ph. D.

abstract: This thesis describes the design process used in the creation of a two stage cellular power amplifier. A background for understanding amplifier linearity, device properties, and ACLR estimation is provided. An outline of the design goals is given with a focus on linearity with high efficiency. The full design is broken into smaller elements which are discussed in detail. The main contribution of this thesis is the description of a novel interstage matching network topology for increasing efficiency. Ultimately the full amplifier design is simulated and compared to the measured results and design goals. It was concluded that the design was successful, and used in a commercially available product. / Dissertation/Thesis / M.S. Electrical Engineering 2012

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As the demand for wireless electronics is increasing, more and more gadgets are connected wirelessly and devices are being improved constantly. The need of the new research and development for advance electronics with high performances is the priority. The data transfer rates are improved for faster communication and better efficiency is to reduce the battery consumption in handheld devices. This thesis presents three single-stage power amplifiers (PAs): class-AB, class-F and inverse class-F (class-F-1) at 28 GHz. The PAs have identical input networks: input matching, base DC feed, and base stabilizing networks. At the load side, there is a different load network for each PA. Class-AB PA load network has a single inductor with a parasitic capacitor to create a resonance at 28GHz. Class-F PA load network is composed of a parallel network (one LC tank in series with an inductor) and a series network (one 3f0-resonance LC tank in series with a capacitor) to create a multi-resonance load network. Class-F-1 load network is composed of a parallel network (two LC tank in series with an inductor) and a series network (one 2f0-resonance LC tank in series with a capacitor) to have a multi-resonance network. The main purpose of using multi-resonance load networks in class-F and class-F-1 is to shape the collector currents and voltages in order to achieve the highest efficiency possible. The chosen bias point is VCE=2.3V and ICE~12mA. As the results, class-AB PA achieves the peak PAE of 44%, 15 dBm OP-1dB, >19 dBm Psat , and 10 dB Gp. Class-F PA achieves the peak PAE of 46%, 14.5 dBm OP-1dB, ~18 dBm Psat , and 10 dB Gp. Class-F-1 PA achieves the peak PAE of 45%, 15.1 dBm OP-1dB, >18 dBm Psat , and 10 dB Gp.. In order to compare the linearity performances among three PA classes, a two-tone signal and a modulated signal with different modulation schemes (QPSK, 16QAM, 64QAM, and 256QAM) are applied to the PAs to produce IM3, ACPR, and EVM. After the analysis and comparison on efficiency and linearity, class-F PA gives the highest efficiency but has the worst linearity while class-AB has the best linearity but has the worst efficiency among three. Class-F-1 PA results lies in the middle of two other classes in term of efficiency and linearity. / Master of Science

Published Article / Fly Ash is a by-product at thermal power stations, also otherwise known as residues of fine particles that rise with flue gases. An industrial by-product may be inferior to the traditional materials used construction applications, but, the lower the cost of these inferior materials make it an attractive alternative if adequate performance can be achieved. The objective of this study is to evaluate the chemical and physical effectiveness of self-cementing fly ashes derived from thermal power stations for construction applications with combined standards. Using laboratory testing specimens, suitable types of Fly Ashes namely: Kendal Dump Ash, Durapozz and Pozzfill, were tested to the required standards to evaluate the potential properties. All three Fly Ashes have been classified as a Class F Fly Ash, which requires a cementing agent for reactions to take place and for early strength gains in the early stages of the reaction processes. The Fly Ashes conformed to the combination of standards and have shown that the proper reactions will take place and will continue over period of time. The use of fly ash is accepted worldwide due to saving in cement, consuming industrial waste and making durable materials, especially due to improvement in the quality fly ash products.

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Universal Mobile Telecommunications Systems (UMTS) is the preferred third generation (3G) communication standard for mobile communications and will provide worldwide coverage, a convenient software technology and very high data rate. The high data rate, especially, requires the use of bandwidth-efficient modulation schemes such as Quadrature Phase Shift Keying (QPSK). But modulation schemes such as QPSK need, in turn, a very linear power from the output of the transmitter power amplifier in order to meet the spectral requirements. A linear power amplifier, traditionally, has very low energy efficiency. Poor energy efficiency directly affects operational costs and causes thermal heating issues in base station transmitters. Thus the power amplifier designer is forced to trade-off between linearity and efficiency. As a result of this trade-off a Class-AB power amplifier is most often used in QPSK based systems. Class-AB power amplifiers provide acceptable linearity at efficiency values around 45-50% typically. This compromise is not a satisfactory solution but is inevitable while using traditional power amplifier design techniques. This thesis details the use of a Class-F amplifier with carefully chosen bias points and harmonic traps to overcome this problem. Class-F amplifiers are usually considered as very high efficiency (80% or more power-added efficiency) amplifiers where the high efficiency is obtained through the use of harmonic traps (L-C filters or quarter-wavelength transmission lines), which provide suitable terminations (either open or short) for the harmonics generated. By doing this, a square wave drain voltage and a peaked half-sinusoidal drain current out-of-phase by 180 are produced. Since only a drain voltage or a drain current exists at any given time, the power dissipation is ideally zero resulting in 100% theoretical efficiency. These very high efficiency values are usually associated with poor linearity. However the linearity can be improved to meet the design standards but compromising on efficiency. Even after this is done, efficiencies are usually 10 to 15% greater than a traditional Class AB power amplifier with similar linearity performance. Thus efficiency can be improved without affecting linearity by the use of Class-F power amplifiers. In order to verify this theory, a Class-AB and a Class-F power amplifier are designed using Motorola's high voltage laterally diffused metal oxide semiconductor (LDMOS) transistor. The choice of bias points and the design of the harmonic traps are very critical for the Class-F performance and hence were designed after careful consideration. The designs were simulated on Agilent's Advanced Design System (ADS) and the simulated results were compared for three different power levels namely, the peak power, 3 dB below peak power and 6 dB below peak power. At all of these power levels it was noted that the Class-F and Class-AB power amplifiers have very similar linearity performance whereas the Class-F power amplifiers show about 10% improvement in efficiency in comparison to the Class-AB power amplifiers. / Master of Science