The processing and characterization of thin film metallic glasses (TFMGs) and bulk metallic glass foams (BMGFs), prepared by the dealloying corrosion process, have been studied. The TFMGs were fabricated by the co-sputtering with the Zr65Cu25Ti10 (wt%) alloy target and the pure Ta target. For BMG, there are two kinds of amorphous metallic powders adopted, namely, Zr53Cu30Ni9Al8, and Ti40Cu36Pd14Zr10. The Zr- and Ti-based powders were sintered at the temperature that Zr- and Ti-based powders overlap their supercooled regions. To fabricate the porous structure, these materials were selectively dissolved using electrochemical treatments in 0.1 M HNO3 solution. The glassy nature and the pore morphology of the corroded materials were confirmed by X-ray diffraction and scanning electron microscopy. In the current study, the pore size is about 10-30 £gm and the porosity volume faction is about 43%. By using different combinations of the powders size and volume fraction, the resulting pore size and porosity fraction can be upgraded to 200-500 £gm and 60-80%, respectively.

In this work, we investigate the relation between the diffusion behavior of Ti1-xAlxN at elevated temperatures and the microstructure. Thinfilm samples are synthesized by reactive co-sputtering with two cathodes. One cathode equipped with Ti target is connected to a highpower impulse magnetron sputtering (HiPIMS) power supply, and the other cathode equipped with Al target is operated with a directcurrent power source. The spinodal decomposition of cubic metastable Ti1-xAlxN controlled by thermally activated diffusion is observe fordiffusion behavior. Various HiPIMS pulsing frequencies are used to achieve different microstructure, while altered power applied to Altarget is used to change the Al content in films. In the phase composition analysis achieved by GI-XRD, the right-shift of (111) film peakalong with increasing Al-power is observed. A saturation of the right-shift and h-AlN peaks are also observed at certain Al-power. Thechemical composition determined by ERDA shows trends of reducing Al solubility limit in metastable phase and O contamination upondecreasing the pulsing frequency. More N deficiency is found in samples deposited with higher frequency. In the 500 Hz and 250 Hzsamples deposited into similar composition and thickness, no apparent difference of the microstructure is observed from the SEM crosssectionalimages. From HT-XRD, we observe higher intensity of TiO2 and h-AlN peaks in 500 Hz sample at elevated temperature ascompared with 250 Hz one. From the reduction of O contamination, denser Ti1-xAlxN films are able to be deposited with lower HiPIMSpulsing frequency. In addition, the higher intensity observed in HT-XRD patterns indicates that the 500 Hz sample is more open todiffusion and therefore allows the new formed phases to grow in larger grains.

<p>The technique of magnetron sputtering is considered for the deposition of silicon rich films. Attention was paid to the possibility to produce light emitting silicon rich films by three different methods, such as reactive magnetron sputtering, co-sputtering from silicon/silicon dioxide targets and a stacked film approach. It was found that photoluminescence of the films deposited in presence of hydrogen was much grater then that for other samples.</p> <p>A model of reactive sputter deposition was also developed and tested in this work. Results achieved in numerical simulation are compared with experimental data and show a good correlation.</p> <p>An experimental unit for magnetron sputtering was designed and built based on a sphere-shaped vacuum chamber equipped with a commercially available magnetron sputter gun, RF generator as power supply unit, vacuum controllers, mass flow controllers, in-situ thickness monitor, temperature controller and other supplemental equipment.</p> <p>Characterization of deposited film was made usmg Profile Measurement, ellipsometry, Rutherford Back Scattering measurements, X-Ray Diffraction measurements and photoluminescence measurements.</p> <p>The achieved results show the principal possibility of getting microcrystalline silicon films and light emitting silicon nanocrystals embedded into silicon dioxide matrix by the sputter deposition technique.</p> / Master of Science (MS)

DC and RF magnetron co-sputtering techniques are one of the most suitable techniques in fabrication of thin films with different compositions. In this work, Al2O3 and Si/Al2O3 thin films were fabricated by using magnetron co-sputtering technique. For Al2O3 films, the stoichiometric, optical and crystallographic analyses were performed. For Si contained Al2O3 films, the formation conditions of Si nanocrystals were investigated. To do so, these thin films were sputtered on Si (100) substrates. Post annealing was done in order to clarify the evolution of Al2O3 matrix and Si nanocrystals at different temperatures. Crystallographic properties and size of the nanocrystals were investigated by X-ray diffraction (XRD) method. The variation of the atomic concentrations and bond formations were investigated with X-ray photoelectron spectroscopy (XPS). The luminescent behaviors of Si nanocrystals and Al2O3 matrix were investigated with photoluminescence (PL) spectroscopy. Finally, the characteristic emissions from the matrix and the nanocrystals were separately identified.

Cette thèse est dédiée à l’élaboration de couches minces d'oxydes de tungstène par pulvérisation cathodique réactive. Afin de jouer sur la composition des films, le procédé de pulsation du gaz réactif (RGPP) est mis en œuvre pour changer les concentrations en oxygène et en tungstène. En parallèle, la technique de dépôt sous incidence oblique (GLAD) est développée pour produire différentes architectures, à savoir des colonnes inclinées, des zigzags ou encore des spirales, et augmenter le rapport surface-volume dans les films. La co-pulvérisation GLAD est également étudiée en utilisant deux cibles inclinées et séparées de W et WO3. Les relations entre la microstructure, la composition, les propriétés électroniques et optiques des films d'oxydes de tungstène sont systématiquement étudiées. Ils sont finalement appliqués comme couches actives pour des capteurs résistifs afin d'améliorer la détection de vapeur de dodécane et d'ozone gazeux. La microstructure poreuse élevée des colonnes inclinées produite par GLAD combinée à une composition ajustée par RGPP conduit à définir une gamme de films d'oxydes de tungstène attractifs pour améliorer les performances capteurs. / This thesis is focused on the reactive sputter deposition of W-O thin films. In order to play with their composition, the Reactive Gas Pulsing Process (RGPP) is implemented and allows tunable oxygen and tungsten concentrations. Similarly, the GLancing Angle Deposition (GLAD) technique is developed to produce various architectures, namely inclined columns, zigzags and spirals, and increases the surface-to-volume ratio of the films. The GLAD co-sputtering approach is also investigated by means of two inclined and separated W and WO3 targets. Relationships between microstructure, composition, electronic and optical properties of W-O films are systematically studied. They are finally applied as active layers for resistive sensors in order to improve detection of dodecane vapor and ozone gas. The high porous microstructure of inclined columns produced by GLAD combined to the suitable composition adjusted by RGPP leads to define a range of W-O films attractive for sensing performances.

This dissertation presents a comprehensive study of the intrinsic room temperature ferromagnetism, RTFM, in technologically important thin films of ZnO, MgO, Mg@ZnO, the so-called d0–magnets that do not contain any intrinsic magnetic elements. We also present the first report on magnetism in Mn doped MgO films fabricated by dc magnetron sputtering. We have just published (April 2013 ‘on-line’) a state of the art review entitled ‘p-type ZnO Theory, growth, properties, and devices’ in the prestigious journal ‘Progress in Materials Science’, summarizing the recent advances of the studies on p-type ZnO thin films and pointing out the major challenges that remain in the field. The experimental work then focuses on the magnetic properties of band gap engineered Mg@ZnO films exploiting the fact that by substitutional doping of Mg for Zn in ZnO it is possible to tailor new materials with bandgap energy in the range 3.3 eV to 7.2 eV, thus extending the possibilities for new magnetic and optical device applications. In addition, we show that by doping Mn in MgO its magnetic properties can be enhanced to saturation values as high as 38.5 emu/cm3 in a 92 nm thick film. These studies involve extensive characterization of the high quality films in the thickness range of nanometers, using SQUID magnetometer for magnetic properties, XRD for structural analysis, Dual beam HRSEM/FIB and AFM for accurate film cross-sectioning and surface morphology, EDXS for elemental analysis, UV-VIS NIR for measuring the band gap of MgxZn(1-x)O films, Mg K-edge NEXAFS experiment in order to understand electronic structure of specific cations present in the thin films The origin of the observed room temperature feerromaganetism is attributed to cation vacancies and its consequences on the polarization about these vacancies in the oxides... ZnO films are promising materials for optoelectronic device applications, and the fabrications of high quality p-type ZnO and p–n junction are the key steps to realize these applications. However, reliable p-type doping of the material remains a major challenge because of the self-compensation from native donor defects (VO and Zni) and/or hydrogen incorporation. Considerable efforts to obtain p-type ZnO by doping different elements with various techniques have resulted in remarkable progress in the field both from theoretical and experimental point of view. In our paper, we discuss p-type ZnO materials: theory, growth, properties and devices, comprehensively. We first discuss the native defects in ZnO. Among the native defects in ZnO, VZn and Oi act as acceptors. We then present the theory of p-type doping in ZnO, and summarize the growth techniques for p-type ZnO and the properties of p-type ZnO materials. Experimentally, besides the intrinsic p-type ZnO grown at O-rich ambient, p-type ZnO (MgZnO) materials have been prepared by various techniques using Group-I, IV and V elements. We pay a special attention to the band gap of p-type ZnO by band gap engineering and room temperature ferro magnetism observed in p-type ZnO. Finally, we summarize the devices based on p-type ZnO materials. In presenting the current studies, we first focus on the sputtering process in order to produce high quality films. From a comparative study of RTFM, in MgO films deposited by sputtering from 99.999% pure metallic Mg, Vs MgO targets respectively on glass/Si substrates under identical ambience during deposition it is found that the metallic targets give the best magnetic properties (e.g: with maximum Ms values of ~13.75 emu/g vs ~ 4.2 emu/g respectively on Si substrates.(supplement 2). Furthermore, the Ms values are strongly film thickness dependent with Mg target while it is weakly so for films from MgO target. Also, the as deposited MgO films using metallic Mg target are found to be amorphous, while it is nanocrystalline when the films are sputtered off MgO targets. The overall Ms values are found to be dependent on the oxygen content in the atmosphere during deposition, increasing to 2.69 emu/g at a oxygen partial pressure of 40% of the total working gas pressure. On annealing to nanocrystallize these films in the temperature range 600 to 8000C strong XRD peaks corresponding to (200) orientation are observed, and Ms values decrease proportionately. (supplement 3). With the above information on studies for optimizing the effect of sputtering gas, film thickness, and oxygen partial pressure, PO2, comprehensive investigations on band gap engineering and magnetism in MgxZn(1-x)O co-sputtered thin films from Mg and Zn targets are then closely examined. The optical band gap calculated from absorption spectra shows that the band gaps of Mg-doped ZnO thin films increased linearly from 3.33 to 4.074 eV. Our studies indicate that both the magnetic properties and the band gap of the film can be tailored by tuning the film thickness and PO2 in the working gas. In summary, RTFM ordering in the thin films originates from cation vacancies which couple ferromagnetically and establish long range magnetic order. The ferromagnetic ordering in these materials is shown to arise from defects situated at the cation sites. Electronic structure studies of some selected films disclose that the unoccupied O 2p states exist and this unoccupied state results from cation vacancy (VMg). / <p>QC 20130524</p>

This study focuses on various aspects of nanocrystals embedded in a dielectric matrix. In the first part of this work, a new approach with the use of Fourier Transform Infrared spectroscopy (FTIR) in the nanocrystal analysis was developed and presented. Si and Ge nanocrystals embedded in SiO2 matrix were mainly studied. This new approach is based on the analysis of structural variations of SiO2 matrix during the formation of semiconductor nanocrystlas. It is shown that the chemical and structural variations of the host matrix are directly related to the precipitation of nanocrystals in it. This correlation provides valuable information about the presences of nanocrystals in the matrix. In the second part of this work, fabrication of SiC films with and without Si nanocrystals inclusions was studied. With this aim, stoichiometric SiC and Si rich SiC thin films were fabricated by using magnetron co-sputtering and Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques. For SiC films, the structural and optical analyses were performed. For Si rich SiC films, the formation conditions of Si nanocrystals were investigated. Post annealing studies were carried out to track the evolution of the SiC matrix and formation of Si nanocrystals at different temperatures. Chemical and structural properties of the SiC host matrix were investigated with FTIR spectroscopy. Optimum conditions for the fabrication of stoichiometric SiC layers were determined. The crystallography of the nanocrystals was investigated by X-Ray Diffraction (XRD). The variation of the atomic concentrations and bond formations were investigated with X-Ray Photoelectron Spectroscopy (XPS). Raman spectroscopy and Transmission Electron Microscopy (TEM) were used to verify the formation of Si nanocrystals. We have shown that both single and multilayer Si nanocrystals can be fabricated in the amorphous SiC matrix for applications such as light emitting diodes and solar cells.

Cette thèse concerne le dépôt de couches minces par la méthode de co-pulvérisation assistée par plasma micro-onde dans le contexte de leurs applications potentielles pour la thermoélectricité. Deux volets principaux ont été développés au cours de ce travail: la synthèse et l'étude des propriétés de couches minces à base de Mg2Si et Mg2(Si,Sn) pour une mise en œuvre au sein de modules thermoélectriques miniaturisés, et l'étude de matériaux susceptibles d’agir comme barrières de diffusion entre un thermoélément à base de Mg2Si et les joints de brasage utilisés pour connecter les contacts électriques. Dans la première partie de l'ouvrage, des couches minces de solutions solides de Mg2(Si,Sn), avec une stœchiométrie proche de Mg2Si0.4Sn0.6, ont été déposées sur différents substrats. Les propriétés thermomécaniques de ces couches ont été étudiées en fonction du processus de dépôt et de la nature du substrat, tandis que la stabilité thermique et la réactivité avec les substrats ont été examinées, ont fonction de la composition, dans le domaine de températures intermédiaires. En outre, les propriétés de transport des couches minces de Mg2Si dopé au Sb ont été caractérisées, en s’intéressant, en particulier, à l’effet de la texturation de la couche mince sur les propriétés thermoélectriques (coefficient Seebeck, conductivité électrique et thermique). La deuxième partie de cette thèse est dédiée au dépôt de couches barrières sur des échantillons massifs de Mg2(Si,Ge) dopés Bi afin de limiter la diffusion et la réactivité entre le thermoélément et le joint de brasage à base d'alliage Al-Si dans le but d’obtenir un contact électrique chimiquement stable et de faible résistance. Deux options ont été étudiées : l'une est basée sur des couches à gradient destinées à ajuster progressivement la composition entre celle du thermoélément et une couche supérieure de Ni qui constitue la barrière de diffusion. L'autre option concerne les bi-couches M/Ni, où M est un métal (Ti, Ta, W ou Cr). Globalement, le travail présenté ici offre un aperçu du potentiel des couches minces à base de Mg2Si et Mg2(Si,Sn) dans la réalisation d'un module thermoélectrique miniaturisé et l'étude de faisabilité de différents matériaux comme barrières de diffusion dans des modules conventionnels. / In this thesis are presented the deposition of thin films by microwave plasma-assisted co­sputtering and their characterization within the context of thermoelectric applications. The aims of the work are split into two categories: the investigation of Mg2Si and Mg2(Si,Sn) thin films in terms of their potential to be implemented in a miniaturized thermoelectric module and the inquiry of materials which may act as diffusion barriers at the interface between Mg2Si-based thermoelements and the brazing joints used in the preparation of electrical contacts. In the first part of the work, thin films of Mg2(Si,Sn) solid solutions with a stoichiometry close to Mg2Si0.4Sn0.6 have been deposited on various substrates. The thermo­mechanical properties of these films have been investigated with respect to their dependence on the deposition process and the nature of the substrate on which they are grown, while the thermal stability and reactivity with the substrates at intermediate temperatures based on their composition has been explored. Furthermore, the transport properties of Sb-doped Mg2Si thin films have been also characterized. This was done in the context of finding the evolution and dependence of the thermoelectric properties (Seebeck coefficient, electrical and thermal conductivities) to the level of texturing within the thin film. The second part of this thesis involves the deposition of diffusion barriers on bulk Bi-doped Mg2(Si,Ge) thermoelements in order to disrupt the diffusion and reactivity between the thermoelectric leg and the Al-Si alloy-based brazing joint and to obtain a chemically stable, low resistive electrical contact. With this objective, two options have been pursued. One is based on the deposition of gradient layers that are meant to gradually inverse the composition from the Mg2(Si,Ge) thermoelements to a top layer of Ni that is used in the deposition of the potential diffusion barrier. The other option concerns the deposition of a M/Ni bi­layer on the TE legs, where M is a metallic layer (Ti, Ta, W or Cr). Overall, the work presented here offers a glimpse of the potential use of Mg2Si and Mg2(Si,Sn) thin films in the making of a miniaturized thermoelectric module and the efficiency of various materials as diffusion barriers in the industry of thermoeletrics.

Ce travail est dédié à la compréhension de phénomènes photoinduits dansles verres de chalcogénure. Ces phénomènes, bien que connus depuis des années,ne sont pas encore bien compris. Travailler sur des couches minces, fabriquées icipar co-pulvérisation cathodique, ajoute une diffculté supplémentaire : il y a peude matière qui interagit avec la lumière et il faut composer avec la présence dusubstrat. Afin d'étudier les phénomènes photoinduits, il a été nécessaire d'adapterdes techniques expérimentales déjà existantes telles que la spectroscopie pompe-sonde, qui permet d'étudier la dynamique électronique ultra-rapide (inférieure à lananoseconde) et les capteurs au quartz piezoélectrique qui permettent de mesurerla masse volumique et les modules mécaniques du matériau déposé à leurs surface.Des essais préliminaires de résonance en transmission ont été également réalisés etsont prometteurs. Une machine de DMA (Dynamical Mechanical Analysis) a étéspécialement conçue au laboratoire afin de réaliser une étude dynamique des verres de chalcogénures sous formes de fibres et de films minces. Toutes ces techniquesexpérimentales permettent d'étudier les effets photoinduits à différentes échelles detemps et de mieux les expliquer. / This work aims to understand photoinduced phenomena in chalcogenide glasses. These phenomena are known for years but yet not fully understood. Studying thin films, deposited by co-sputtering here, adds an other difficulty : the light-matter interaction takes place in a small amount of matter and it is inevitable to deal with the substrate. To study these photoinduced effects, it was necessary to adapt some already existing methods such as pump-probe spectroscopy which measures ultrafast electronic dynamics (less than a nanosecond), piezoelectric quartz sensors which gives density and mechanical modulus of the materials deposited on. Preliminary tests were run to investigate optical transmission resonance and are promising. A DMA machine (Dynamical Mechanical Analysis) was especially designed in the laboratory to study the behaviour of fibers and films. All these experimental setups allow to study photoinduced phenomena at various timescale and to better understand them.

No description available.