Cette thèse porte sur le développement des méthodes d'analyse structurale de la couche mince de GaP epitaxiées sur le substrat de silicium par l'épitaxie par jets moléculaires (MBE), basées sur la diffraction des rayons X (ORX) et combinées à des techniques complémentaires telles que la microscopie électronique en transmission (TEM), la microscopie à force atomique (AFM) et la microscopie à effet tunnel (STM). Le travail est centré sur la caractérisation quantitative de la densité des défauts cristallins comme les micro-macles et les domaines d'inversion présents dans la couche ainsi que l'évaluation de la qualité de surface et l'interface. L'objectif ultime est d'obtenir une plate-forme GaP/Si parfaitement cristallisée sans défaut, via l'optimisation des paramètres de croissance. Nous avons mis en place et utilisé deux méthodes de quantification des micro-macles par la diffraction des rayons X en condition de laboratoire : les figures de pôles pour la visualisation rapide et l'évaluation de la densité des micro-macles et les « rocking-curves » permettent une extraction précise de la faction volumique de domaine maclé. Les propriétés structurales de la plate-forme de GaP/Si ont été considérablement améliorées, après une procédure d'optimisation impliquant la température de croissance, une procédure de croissance alternée (MEE) et une séquence de croissance en deux étapes. Un échantillon quasiment sans micro-macles a été obtenu par le dépôt de 40 monocouches de GaP par MEE à 350 •c suivi d'une surcroissance de 40 nm de GaP par MBE continue, à 500 •c. La surface de l'échantillon est lisse avec une rugosité de 0.3 nm. L'évaluation des domaines d'inversion par la ORX a été effectuée sur les cartographies de l'espace réciproque centrées sur les réflexions GaP de type (OOL), en laboratoire et sur une ligne synchrotron. Les balayages « transverses » extrait à partir des cartographies de l'espace réciproque sont analysés via une méthode dite "Williamson-Hall like", afin d'obtenir la "mosaïcité" qui est reliée à la micro-désorientation des petits domaines cristallins et la longueur de corrélation latérale correspondant à ces petits domaines. La distance moyenne entre parois de domaines d'inversion et ensuite estimé à partir de cette mesure. En utilisant cette méthode d'analyse et les techniques microscopiques, une optimisation plus poussée a été effectuée sur la dose de Ga au stade initial de croissance, l'utilisation de couches de marqueur AIGaP et l'homoépitaxie d'une couche de silicium avant le GaP. Enfin, nous avons obtenu un échantillon ne présentant pas de signal de micro-macle détectable en conditions standard de laboratoire, et une très faible densité de domaine d'inversion. Nous avons aussi observé une interface de GaP/Si visiblement présentant des bi-marches atomiques très régulières, sur un échantillon avec une couche de silicium déposée avant la croissance du GaP. / This thesis deals with the development of structural analysis methods of the GaP thin layers heterogeneously grown on the Si substrate by Molecular Beam Epixay (MBE), based on X-ray diffraction (XRD) analyses, combined with complementary techniques such as transmission electron microscopy (TEM), atomic force microscopy techniques (AFM) and scanning tunneling microscope (STM). The main work is centered on the quantitative characterization of crystalline defect such as micro-twins and the anti-phase domains, and the evaluation of the surface and interface quality. The ultimate goal is to achieve a perfectly crystallized GaP/Si platform without any defect, through the optimization of the growth conditions. We have applied two micro-twin quantification methods using a XRD lab setup. Pole figure method for fast visualization and evaluation of micro-twin density and rocking curves integration for a more precise absolute quantification of the micro-twin volume fraction. The GaP/Si platform structural properties have been significantly improved, after an optimization procedure involving growth temperature, MEE (Migration Enhanced Epitaxy) growth procedure and a twostep growth sequence. GaP layers quasi-free of MTs are obtained, with a r.m.s. roughness of only 0.3 nm. The APD evaluation by XRD has been performed on reciprocal space maps (RSM) centered on the (OOL) GaP reciprocal space lattice point either in lab setup or on synchrotron. Analysis of the transverse scans extracted from such RSM through the "Willamson-Hall like" method permits obtaining the "mosaicity" that is related to the micro-orientation of the small crystalline domains in the GaP layer, and the lateral correlation length which is considered to be related to the mean distance between two APBs, provided that this distance is approximately homogenous and corresponding to the mean APD size, and the density of other defects are very weak so that their influence can be neglected. Using this analytical method and the microscopic techniques, further optimization has been carried out on Ga amount at the initial growth stage, the use of AIGaP marker layers and the homoepitaxie of Si buffer layer. Finally, sample with none MT signal and very low density of APD has been achieved. Moreover, an abrupt GaP/Si interface displaying regular and double atomic steppes is observed on sample with a Si buffer layer prior to the GaP growth.

Four plant species traditionally used for the treatment of diabetes by South African traditional healers and herbalists were investigated for hypoglycaemic activity. Species included Schkuhria pinnata (Lam.) Cabrera, Pteronia divaricata (P.J. Bergius) Less Elaeodendron transvaalense (Burtt Davy) R.H. Archer and Euclea undulata Thunb var. myrtina (Burch.) Hiern. Acetone and ethanol plant extracts were prepared and tested in vitro, for glucose utilization, at concentrations of 12.5 µg/ml on three cell lines namely; Murine C2C12 myocytes, Chang liver cells and 3T3-L1 preadipocytes. Metformin, at a concentration of 1 µM (0.166 µg/ml) was used as positive control for hepatic cells and insulin at a concentration 1 µM (5.7 µg/ml) for myocytes and preadipocytes. Toxicity tests were done for all extracts on preadipocytes and hepatic cells, but not on myocytes as these cells were exposed to the extract for only a short period (1 hour) during the hypoglycaemic bioassay. Preadipocytes and hepatic cells were exposed to the plant extracts for 48 hours. The four plant extracts were further investigated for hypoglycaemic activity by evaluating inhibiting effects on carbohydrate-hydrolising enzymes alpha-glycosidase and alpha-amylase. In vitro hypoglycaemic analysis revealed that acetone and ethanol plant extracts of S. pinnata, E. undulata and E. transvaalense, displayed hypoglycaemic activity in one or more of the various cell lines, whereas, P. divaricata showed no hypoglycaemic activity. The best results were obtained with the ethanol and acetone extracts of S. pinnata in preadipocytes with a glucose uptake of 148.2% and 79.6% respectively, above control (100%). However, about 50% preadipocytes survived on exposure to the extracts of S. pinnata at 12.5 µg/ml indicating significant cytotoxicity. Glucose uptake of 63.3% was observed by the ethanol extract of S. pinnata on hepatic cells. E. transvaalense showed hypoglycaemic activity on preadipocytes exhibiting glucose uptake of 38.6% above control 100%. Glucose uptake of 62.2 % were obtained by the E. undulata extract in C2C12 myocytes, with 100% cell viability. E. undulata scored a +3 and was chosen for further analysis. Antidiabetic activity and toxicity of the plant extracts were taken into consideration when scoring was applied. Alpha-glucosidase and alpha-amylase results indicated that P. divaricata extract inhibited alpha-glucosidase (IC50 31.22 µg/ml) whereas E. undulata (IC50 2.80 µg/ml) and E. transvaalense (IC50 1.12 µg/ml) extracts inhibited alpha-amylase. Results obtained indicated that all four plant extracts tested have the ability to lower blood glucose levels to some extent and in different manners and therefore corroborate the ethnomedicinal use of these four species in the treatment of diabetes. Phytochemical studies of a crude acetone extract of the root bark of E. undulata var. myrtina produced a new á-amyrin-3O-β-(5-hydroxy) ferulic acid compound (1), and three known compounds; betulin (2), lupeol (3) and epicatechin (4). The chemical structures were determined by spectroscopic means. In vitro assays on C2C12 myocytes revealed that (2) (21.4%) and (4) (166.3%) were active in lowering blood glucose levels whereas (1) (IC50 4.79 µg/ml) and to a lesser extent (4) (IC50 5.86 µg/ml) and (3) (IC50 6.27 µg/ml) inhibited alpha-glucosidase. These results indicated that the crude, E. undulata acetone extract does contain compounds that display hypoglycaemic activity. The hypoglycaemic activity of four plant species including E. undulata, and the four isolated purified compounds, are reported for the first time. / Thesis (PhD)--University of Pretoria, 2010. / Plant Science / unrestricted

Chloroperoxidase (CPO) is a heme-thiolate protein with exceptional versatility and great potential as a biocatalyst. The CPO reactive species, Compound I ( Cpd I) is of particular interest, as well as the Cytochrome P450 (P450) -type monoxygenase catalytic activity, which has significant biotechnological potential. Proximal hydrogen bonding of the axial sulfur with the backbone amides (NH•••S) is a conserved feature of heme-thiolate enzymes. In CPO, the effect of NH•••S bonds is amplified by the dipole moment of the proximal helix. The role of the proximal region has been disputed as to whether it simply protects the axial sulfur, or whether it additionally influences catalysis via modulation of the push effect. The objective of the research presented herein is two-fold. First, the influence of the NH•••S bonds on Cpd I formation is determined by obtaining the reaction coordinate, starting from a peroxide bound heme, for two model systems (one with proximal residues providing NH•••S bonds and one without) and comparing the results. Secondly, the influence of the proximal region on the epoxidation of Cis-β-methylsterene is obtained. This is performed similarly to the first objective however, the reaction coordinate begins with a Cpd I-CBMS complex and the proximal contribution is extended to include the influence of the proximal helix dipole. Our findings show that the proximal region stabilizes Cpd 0 relative to all other minima and reduces the barrier for Cpd 0’s formation. The stability of protonated Compound 0 is reduced, favoring a hybrid homo-heterolytic relative to a classic heterolytic mechanism for O-O bond scission. Additionally, the proximal region significantly enhances CPO’s reactivity; the Cβ-O bond barrier is stabilized, while Cα-O-Cβ ring closure becomes barrierless. The stabilization of the reaction barrier correlates with increased electron density transfer to residues of the proximal pocket and involves a change in the electron transfer mechanism. These results can be traced to a reduction in the pKa of the heme-bound substrate and an increase in oxidation potential, a result of the proximal region reducing the “push effect”.

This study focuses on the development of InAs/GaInSb strained-layer superlattice structures by metal organic chemical vapour deposition (MOCVD), and deals with two aspects of the development of InAs/GaInSb SLS’s by MOCVD viz. the deposition of nano-scale (~100 Å) GaInSb layers, and the electrical characterization of unstrained InAs. The first part of this work aims to study the MOCVD growth of GaInSb layers in terms of deposition rate and indium incorporation on the nano-scale. This task is approached by first optimizing the growth of relatively thick (~2 μm) epitaxial films, and then assuming similar growth parameters during nano-scale deposition. The GaInSb layers were grown as part of GaInSb/GaSb quantum well (QW) structures. By using this approach, the GaInSb QW’s (~100 Å) could be characterized with the use of photoluminescence spectroscopy, which, when used in conjunction with transmission electron microscopy and/or X-ray diffractomery, proves useful in the analysis of such small scale deposition. It is shown that the growth rate of GaInSb on the nano-scale approaches the nominal growth rates determined from thick (~2 μm) GaInSb calibration layers. The In incorporation efficiency in nano-layers, however, was markedly lower than what was predicted by the GaInSb calibration layers. This reduction in indium incorporation could be the result of the effects of strain on In incorporation. The choice of substrate orientation for QW deposition was also studied. QW structures were grown simultaneously on both (100) and 2°off (100) GaSb(Te) substrates, and it is shown that growth on non-vicinal substrates is more conducive to the deposition of high quality QW structures. The second part of this study focuses on the electrical characterization of unstrained InAs. It is long known that conventional Hall measurements cannot be used to accurately characterize InAs epitaxial layers, as a result of parallel conduction resulting from surface and/or interface effects. This study looks at extracting the surface and bulk electrical properties of n-type InAs thin films directly from variable magnetic field Hall measurements. For p-type InAs, the situation is complicated by the relatively large electron to hole mobility ratio of InAs which tends to conceal the p-type nature of InAs thin films from Hall measurements. Here, this effect is illustrated by way of theoretical simulation of Hall data.

The importance of infrared (IR) technology (for detection in the 3-5 μm and 8-14 μm atmospheric windows) has spread from military applications to civilian applications since World War II. The commercial IR detector market in these wavelength ranges is dominated by mercury cadmium telluride (MCT) alloys. The use of these alloys has, however, been faced with technological difficulties. One of the materials that have been tipped to be suitable to replace MCT is InAs/InxGa1-xSb strained layer superlattices (SLS’s). Atmospheric pressure metal-organic vapour phase epitaxy (MOVPE) has been used to grow InAs/GaSb strained layer superlattices (SLS’s) at 510 °C in this study. This is a starting point towards the development of MOVPE InAs/InxGa1-xSb SLS’s using the same system. Before the SLS’s could be attempted, the growth parameters for GaSb were optimised. Growth parameters for InAs were taken from reports on previous studies conducted using the same reactor. Initially, trimethylgallium, a source that has been used extensively in the same growth system for the growth of GaSb and InxGa1-xSb was intended to be used for gallium species. The high growth rates yielded by this source were too large for the growth of SLS structures, however. Thus, triethylgallium (rarely used for atmospheric pressure MOVPE) was utilized. GaSb layers (between 1 and 2 μm thick) were grown at two different temperatures (550 °C and 510 °C) with a varying V/III ratio. A V/III ratio of 1.5 was found to be optimal at 550 °C. However, the low incorporation efficiency of indium into GaSb at this temperature was inadequate to obtain InxGa1-xSb with an indium mole fraction (x) of around 0.3, which had previously been reported to be optimal for the performance of InAs/InxGa1-xSb SLS’s, due to the maximum splitting of the valence mini bands for this composition. The growth temperature was thus lowered to 510 °C. This resulted in an increase in the optimum V/III ratio to 1.75 for GaSb and yielded much higher incorporation efficiencies of indium in InxGa1-xSb. However, this lower growth temperature also produced poorer surface morphologies for both the binary and ternary layers, due to the reduced surface diffusion of the adsorbed species. An interface control study during the growth of InAs/GaSb SLS’s was subsequently conducted, by investigating the influence of different gas switching sequences on the interface type and quality. It was noted that the growth of SLS’s without any growth interruptions at the interfaces leads to tensile strained SLS’s (GaAs-like interfaces) with a rather large lattice mismatch. A 5 second flow of TMSb over the InAs surface and a flow of H2 over GaSb surface yielded compressively strained SLS’s. Flowing TMIn for 1 second and following by a flow of TMSb for 4 seconds over the GaSb surface, while flowing H2 for 5 seconds over the InAs surface, resulted in SLS’s with GaAs-like interfacial layers and a reduced lattice mismatch. Temperature gradients across the surface of the susceptor led to SLS’s with different structural quality. High resolution x-ray diffraction (HRXRD) was used to determine the thicknesses as well as the type of interfacial layers. The physical parameters of the SLS’s obtained from simulating the HRXRD spectra were comparable to the parameters obtained from cross sectional transmission electron microscopy (XTEM) images. The thicknesses of the layers and the interface type played a major role in determining the cut-off wavelength of the SLS’s.

Les nanofils semiconducteurs suscitent un vif intérêt tant pour leurs propriétés fondamentales originales que pour leurs applications potentielles en opto- et nano-Électronique. La physique des nanofils et en particulier des matériaux à la base est difficile à caractériser. Dans ce contexte, la simulation numérique peut apporter des réponses quantitatives aux problèmes posés par ces objets et aider à explorer leur potentiel. En particulier, leur cristallisation se fait dans une phase hexagonale wurtzite mais avec des fautes d’empilement qui donnent lieu à des insertions de séquence cubique. La structure cubique blende de zinc a été largement étudiée, les différents aspects physiques des semiconducteurs l’adoptant sont bien illustrés dans la littérature. Par contre, ils sont mal compris en phase wurtzite. C’est pourquoi, l’étude des propriétés structurales et électroniques des cristaux III-V et hétérostructures wurtzite a fait l’objet du présent travail. En particulier, je me suis intéressée à déterminer les paramètres structuraux et électroniques d’ InAs et InP. Pour aborder ces problématiques il convient de trouver une méthode théorique adaptée. Dans ce contexte, les modélisations ab initio permettent d’explorer les propriétés globales sans une connaissance expérimentale à priori des systèmes étudiés. Elles reposent sur la résolution variationnelle de l’équation de Schrödinger qui est lourde d’un point de vue computationnel. Il existe donc toute une hiérarchie de modèles plus ou moins sophistiqués qui approchent plus ou moins la solution exacte du problème. Dans le cadre de ce travail, j’ai utilisé la théorie de la fonctionnelle de la densité qui reproduit les résultats expérimentaux de structures mais peine à évaluer les niveaux énergétiques vides. Cette difficulté est due à la définition des effets à N corps et notamment aux effets de corrélation entre les électrons. L’erreur dans l’évaluation des énergies est corrigée grâce à la correction apportée par l’approximation GW ou les fonctionnelles hybrides. Ainsi, j’ai pu obtenir des structures électroniques correctes et exploitables afin de déterminer les potentiels de déformation. Il est notamment possible de faire varier la composition des nanofils de long de leur axe de croissance afin d’y introduire des jonctions p-N, des boîtes quantiques ou des barrières tunnel. Ces hétérostructures offrent de multiples opportunités : la faisabilité de transistors, de diodes à effet tunnel résonant ou de dispositifs à un électron basés sur les nanofils de silicium ou de III-V a ainsi déjà été démontrée. Ces matériaux permettent de réaliser des hétérostructures inédites car ils peuvent s’accommoder de forts désaccords de maille en déformant leur surface. La relaxation des contraintes structurales a toutefois un impact important sur leurs propriétés électroniques et optiques. Un des paramètres importants pour bien comprendre le comportement de ces structures quantiques est l’offset électronique ou la discontinuité énergétique. Il a été calculé pour le système InAs/InP et confronté à des études expérimentales suivant les directions de croissance. / Semiconductor nanowires are attracting much attention both for their original properties and their potential applications in opto- and nanoelectronics. The physics of nanowires and in particular materials at the base is poorly understood and difficult to characterize. In this context, the numerical simulation can provide quantitative answers to the problems posed by these objects and help to explore their potential. In particular, their crystallization is in a wurtzite (WZ) hexagonal phase but with stacking faults that result in insertions of cubic sequences. The zinc blende structure has been widely studied; the various structural, electronic and optical properties of semiconductor materials adopting this structure are well illustrated and discussed in the literature. On the other side, these properties are poorly understood for WZ. Study of WZ III-V materials and related heterostructures is the subject of this work. In particular, I have simulated the structural and electronic properties of relaxed InAs and InP and under strain condition. ab initio modeling or first principle may explore structural, electronic and dynamics of matter without any experimental prior knowledge. Here, DFT calculations are performed to model the structural and electronic properties of WZ InAs and InP. The error in the evaluation of conduction energy states has been circumvented with the use of GW approximation and hybrid functionals. Finally, I have studied band offset alignment and polarizations effects in InAs/InP WZ system.

Efficient and economic treatment of low concentration organic pollutants in water, wastewater or industrial process streams is normally very difficult to achieve. Activated carbon has been widely used for contaminant adsorption, but there are problems associated with its regeneration. In this work, a novel, non-porous, highly-conducting graphite intercalation compounds material (GIC) is used. The use of such an adsorbent can significantly reduce the time required to achieve both equilibrium and electrochemical regeneration. This character allows the design of an innovative treatment process that can adsorb contaminants and electrochemically regenerate itself simultaneously within a single unit. A novel liquid-lift reactor for water treatment by an adsorption and electrochemical regeneration process is developed in this work. Batch experiments are carried out to determine the adsorption kinetics and equilibrium isotherm of adsorption Acid Violet 17 onto the GIC adsorbent. The experimental kinetic data are analyzed using the pseudo-first order, pseudo-second order, intra-particle diffusion and three-stage kinetic models. The linear pseudo-second order model offers the highest r2 correlation coefficient. The experimental isotherm data are analyzed using Langmuir, Freundlich and Tempkin isotherm models. The non-linear Langmuir model gives the highest r2 correlation coefficient. High regeneration efficiency (more than 90%) over a number of cycles is obtained by passing a charge of 6.4 C g-1 of the GIC adsorbent, at a current density of 5 mA cm-2 using a batch, sequential adsorption (60 min) and electrochemical regeneration (30 min) process. The simultaneous adsorption and regeneration process indicates that 100 % AV 17 can be removed in 60 min (4L of 100 mg L-1 AV 17 solution, 140g of the GIC adsorbent, current density of 5mA cm-2). The flow behaviour in the electrochemical reactor has been studied using a pulse tracer technique. The residence time distribution shows that the flow behaviour in the liquid-spouted reactor can be regarded as a plug flow in series with a continuous stirred tank reactor. For the batch adsorption system, a “parallel adsorption barren well hypothesis” is proposed in this thesis. For the batch simultaneous adsorption and electrochemical regeneration system, a multi-parameter model is proposed in this thesis.

The aim of this Master's thesis was to characterize the current cost ratio, pricing system and profitability of an agricultural firm, called P.G.TRADE, spol s r.o.. This company is engaged in the production and sale of compound feeds and premixes, resp. in storing different kinds of agricultural commodities. My specific aim was to determine whether the current pricing system and prices cover all the costs which incurred because of the processes of production and sale of finished products and that in doing so provides a satisfactory level of profitability, too. In the first, methodological part, I summarized all the necessary theoretical knowledge that we need to know about controlling. I paid particularly big attention to calculations and budgeting. In the application part I focused on the characteristics of the company itself and on the analysis of the costs and of the pricing system. In the next part I described in details the manufacturing processes of compound feeds and premixes in the company's main factory in Dvory nad Žitavou. The last part is devoted to the calculation of production costs and identifying weaknesses. In addition to the description of the conclusions I tried to propose some measures that could help in improving the company's profitability.

The competitively has transformed manufacturing environments, where the companys processes with increasingly complex seeking to reduce waste generated in manufacturing environment that not add value to the product and thus the setup machine downtime includes wasting time. The methodology for rapid exchange tool is used to reduce the time setup increasing productivity line where is implanted. This work must a main goal is implement as a technique for quick change tool in a line of extrusion of polymeric compounds with aid of computer simulation. Company producing polymeric compounds have as goal to be world in reference time setup with respect to other plants and accordingly justified the implementation of rapid exchange tool in your production line. This work have a approach quantitative diagnosis with the current situation, by means of documents and methods used, and trial with intervention of variables with computer simulation of the current situation and changes suggested by simulation. The results obtained after the implementation of expressive and improvements have been following the steps for proposal literature, got to get up, in certain cases of setup, the `one touch exchange of die and thus using the rapid exchange tool methodology as a tool for continuous improvement, attained the goal in reducing setup. / A competitividade vem transformando os ambientes de manufatura, onde as empresas com processos cada vez mais complexos procuram reduzir os desperdícios gerados no ambiente fabril que não agregam valor ao produto e desse modo o setup de máquina engloba tempo ocioso. A metodologia de troca rápida de ferramenta é utilizada para reduzir os tempos de setup aumentando a produtividade da linha onde é implantado. Esta dissertação tem como objetivo principal implantar a técnica de troca rápida de ferramenta em uma linha de extrusão de compostos poliméricos com auxilio de simulação computacional. A empresa produtora de compostos poliméricos tem como meta ser referência mundial em tempo de setup com relação a outras plantas e dessa forma justifica-se a implantação da troca rápida de ferramenta em sua linha de produção. Esta dissertação utiliza uma abordagem quantitativa com diagnóstico da situação atual, por meio de documentos e métodos utilizados, e experimentação com intervenção das variáveis com simulação computacional e modificação da situação atual sugerida pela simulação. Os resultados obtidos após a implantação das melhorias foram expressivos e, seguindo as etapas proposta pela literatura, conseguiu-se chegar, em determinados casos de setup, à troca de ferramenta em um toque e dessa forma, utilizando a metodologia de troca rápida de ferramenta como ferramenta de melhoria contínua, foi possível atingir a meta na redução do tempo de setup.

O presente trabalho teve por objetivo verificar a possibilidade de obtenção de filmes finos pela polimerização por plasma de éter etílico, acetato de metila e de etila, e testes dos referidos filmes quanto à possibilidade de adsorção de compostos orgânicos polares, pois filmes adsorventes podem ser usados na construção de sensores e pré-concentradores. Utilizou-se para a polimerização por plasma os reagentes puros, mistura de éter etílico com oxigênio ou acetona ou os acetatos de metila e etila. Em todos os casos obtiveram-se filmes sobre substrato de silício e estes filmes apresentaram pouco ou nenhum descolamento por cerca de um ano. Os filmes foram caracterizados por perfilometria, para determinar a taxa de deposição, por espectroscopia de infravermelho, para avaliar as espécies polares e medida de ângulo de contato com uma gota de 4 µL de água destilada e soluções aquosas de 2-propanol ou acetona, para comprovar o caráter hidrofílico e organofílico, respectivamente. Os filmes a base de éter etílico apresentaram taxas de deposição entre 80 e 300 Å/min, além de alta intensidade relativa da banda de OH, medida por espectroscopia de infravermelho. Os ângulos de contato ficaram próximos a 75°, mostrando uma superfície hidrofílica. Adição de oxigênio ao plasma favoreceu a oxidação da molécula, conseqüente formação de CO e aumento da medida de ângulo de contato. Acetona, por sua vez, além de favorecer a produção de CO aumenta a formação de particulados e a medida de ângulo de contato. Deposição em câmara fechada favorece o aumento da taxa de deposição e formação de OH, além de pequena diminuição da medida de ângulo de contato. Adições dos acetatos de metila e/ou etila torna o sistema complexo e de difícil controle. Para os ésteres obteve-se janela de processo estreita, onde para acetato de metila observaram-se taxas de deposição maiores e medidas de ângulo de contato menores, entre 160 e 510 Å/min, e 54° a 68°, respectivamente, o que prova que a superfície é hidrofílica. A espectroscopia de infravermelho mostrou bandas semelhantes às bandas encontradas para éter etílico. Deposição em câmara fechada aumentou a taxa de deposição e favoreceu a diminuição das medidas de ângulo de contato. No plasma de acetato de etila observaram-se taxas de deposição alta e ângulos de contato intermediários entre filmes a base de éter etílico e acetato de metila, entre 350 e 1200 Å/min, e 61° a 72°, respectivamente. A superfície é hidrofílica e a espectrocopia de infravermelho mostrou bandas semelhantes às bandas encontradas para éter etílico, porém a banda CO apresenta alta intensidade relativa. A deposição em câmara fechada aumentou a taxa de deposição e a intensidade relativa de CO, obtendo-se ângulos de contato menores se comparados aos da deposição em fluxo contínuo.A medida de ângulo de contato para soluções aquosas de 2-propanol e acetona mostrou que os filmes são organofílicos e que apresentam maior afinidade por 2-propanol. A deposição sobre estrutura padrão em alumínio mostrou boa conformidade de degrau para todos os filmes. Medidas em microbalança de quartzo mostraram que os filmes adsorvem compostos orgânicos polares. Deposição dos filmes de éter e ésteres sobre filme a base de hexametildissilazana mostrou a formação de um filme contínuo, mas que rapidamente apresenta estresse, apesar de não ocorrer descolamento. A deposição sobre placas planas de acrílico mostrou um filme aderente tanto para éter etílico quanto para os ésteres. Estes filmes se apresentam hidrofílicos e organofílicos. Microcanais usinados em acrílico demonstraram a possibilidade do uso do filme na produção de estruturas pré-concentradoras. / The aim of this work is to characterize thin films obtained by plasma polymerization of ethyl ether, ethyl or methyl acetate. The films were tested for adsorption of polar organic compounds in order to evaluate their use for sensors or preconcentrators manufacturing. It was tried plasma polymerization of pure reactants and mixtures of ethyl ether with oxygen, acetone, methyl or ethyl acetate. For all reactants and mixtures films were obtained on silicon and peeling did not occur during one year of observation. Measurements of profilemeter, infrared spectroscopy, contact angle for drop of water, 2-propanol and acetone aqueous solutions were used to determine deposition rate, polar species and hydrophilic or organophilic character, respectively. For ethyl ether the films show a deposition rate between 80 and 300 Å/min and high OH relative intensity. Water contact angles were approximately 75º for all films, therefore the surfaces are hydrophilic. Oxygen addition to the plasma favors ethyl ether oxidation, increase in CO relative intensity and water contact angle. Acetone addition favors rise not only in CO relative intensity and water contact angle but also in particle formation. Deposition on closed chamber mode favors the increase of deposition rate and OH formation but the diminish on water contact angle. Mixture with methyl or ethyl acetate turns the system complex and difficult to control. The acetates process window acetates were narrow but presented higher deposition rates, from 160 A/min to 510 A/min, and lower water contact angles, from 54 º to 68º. Infrared spectroscopy shows the same species found for ethyl ether deposition. Deposition on closed chamber mode increases deposition rate and decreases the water contact angle. Ethyl acetate plasmas show high deposition rate but low water contact angle values when compared to methyl acetate. The deposition rates and water contact angles lie between 350 and 1200 A/min and 61º and 72º, respectively. Infrared spectroscopy shows the same species found on ethyl ether deposition but co presents high relative intensity. Deposition on closed chamber mode not only rises the deposition rate and CO relative intensity but also lowers the water contact angle. Contact angle measurements for 2-propanol and acetone aqueous solution show the surface is organophilic and show bigger affinity for 2-propanol aqueous solution. Deposition on aluminum lines deposited on silicon shows conformal deposition for all films. Quartz crystal measurements show the films adsorb polar organic compounds. Plasma deposited ethyl ether, methyl or ethyl acetate films on plasma deposited hexametyldisilazane substrates showed a continuous film that easily stress, although peeling was not observed. Deposition on poly(methyl methacrylate) showed good adhesion for all films. These films are also hydrophilic and organophilic. Micromachinned microchannels showed the possibility of adsorption and preconcentrators development.