Thesis (M.S.)--Rochester Institute of Technology, 2008. / Typescript. Includes bibliographical references (leaves 56-58).

Thesis (M.S.)--Rochester Institute of Technology, 2004. / Typescript. Includes bibliographical references (leaves 74-76).

No description available.

In this work, adhesion between electrolessly deposited copper and dielectric materials for use in microelectronic devices is investigated. The microelectronics industry requires continuous advances due to ever-evolving technology and the corresponding need for higher density substrates with smaller features. At the same time, adhesion must be maintained in order to preserve package reliability and mechanical performance. In order to meet these requirements two approaches were taken: smoothing the surface of traditional epoxy dielectric materials while maintaining adhesion, and increasing adhesion on advanced dielectric materials through chemical bonding and mechanical anchoring. It was found that NH3 plasma treatments can be effective for increasing both catalyst adsorption and adhesion across a range of materials. This adhesion is achieved through increased nitrogen content on the polymer surface, specifically N=C. This nitrogen interacts with the palladium catalyst particles to form chemical anchors between the polymer surface and the electroless copper layer without the need for roughness. Chemical bonding alone, however, did not enable sufficient adhesion but needed to be supplemented with mechanical anchoring. Traditional epoxy materials were treated with a swell and etch process to roughen the surface and create mechanical anchoring. This same process was found to be ineffective when used on advanced dielectric materials. In order to create controlled roughness on these surfaces a novel method was developed that utilized blends of traditional epoxy with the advanced materials. Finally, combined treatments of surface roughening followed by plasma treatments were utilized to create optimum interfaces between traditional or advanced dielectric materials and electroless copper. In these systems adhesion was measured over 0.5 N/mm with root-mean-square surface roughness as low as 15 nm. In addition, the individual contributions of chemical bonding and mechanical anchoring were identified. The plasma treatment conditions used in these experiments contributed up to 0.25 N/mm to adhesion through purely chemical bonding with minimal roughness generation. Mechanical anchoring accounted for the remainder of adhesion, 0.2-0.8 N/mm depending on the level of roughness created on the surface. Thus, optimized surfaces with very low surface roughness and adequate adhesion were achieved by sequential combination of roughness formation and chemical modifications.

abstract: Nickel-Copper metallization for silicon solar cells offers a cost effective alternative to traditional screen printed silver paste technology. The main objective of this work is to study the formation of nickel silicide contacts with and without native silicon dioxide SiO2. The effect of native SiO2 on the silicide formation has been studied using Raman spectroscopy, Rutherford backscattering spectrometry and sheet resistance measurements which shows that SiO 2 acts as a diffusion barrier for silicidation at low temperatures of 350°C. At 400°C the presence of SiO2 results in the increased formation of nickel mono-silicide phase with reduced thickness when compared to samples without any native oxide. Pre and post-anneal measurements of Suns Voc, photoluminescence and Illuminated lock in thermography show effect of annealing on electrical characteristics of the device. The presence of native oxide is found to prevent degradation of the solar cells when compared to cells without any native oxide. A process flow for fabricating silicon solar cells using light induced plating of nickel and copper with and without native oxide (SiO2) has been developed and cell results for devices fabricated on 156mm wafers have been discussed. / Dissertation/Thesis / Masters Thesis Materials Science and Engineering 2016

abstract: This work demonstrates a capable reverse pulse deposition methodology to influence gap fill behavior inside microvia along with a uniform deposit in the fine line patterned regions for substrate packaging applications. Interconnect circuitry in IC substrate packages comprises of stacked microvia that varies in depth from 20µm to 100µm with an aspect ratio of 0.5 to 1.5 and fine line patterns defined by photolithography. Photolithography defined pattern regions incorporate a wide variety of feature sizes including large circular pad structures with diameter of 20µm - 200µm, fine traces with varying widths of 3µm - 30µm and additional planar regions to define a IC substrate package. Electrodeposition of copper is performed to establish the desired circuit. Electrodeposition of copper in IC substrate applications holds certain unique challenges in that they require a low cost manufacturing process that enables a void-free gap fill inside the microvia along with uniform deposition of copper on exposed patterned regions. Deposition time scales to establish the desired metal thickness for such packages could range from several minutes to few hours. This work showcases a reverse pulse electrodeposition methodology that achieves void-free gap fill inside the microvia and uniform plating in FLS (Fine Lines and Spaces) regions with significantly higher deposition rates than traditional approaches. In order to achieve this capability, systematic experimental and simulation studies were performed. A strong correlation of independent parameters that govern the electrodeposition process such as bath temperature, reverse pulse plating parameters and the ratio of electrolyte concentrations is shown to the deposition kinetics and deposition uniformity in fine patterned regions and gap fill rate inside the microvia. Additionally, insight into the physics of via fill process is presented with secondary and tertiary current simulation efforts. Such efforts lead to show “smart” control of deposition rate at the top and bottom of via to avoid void formation. Finally, a parametric effect on grain size and the ensuing copper metallurgical characteristics of bulk copper is also shown to enable high reliability substrate packages for the IC packaging industry. / Dissertation/Thesis / Doctoral Dissertation Materials Science and Engineering 2018

The electrochemical quartz crystal microbalance (EQCM) has been proven an effective mean of monitoring up to nano-scale mass changes related to electrode potential variations at its surface. The principles of operation are based on the converse piezoelectric response of quartz crystals to mass variations on the crystal surface. In this work, principles and operations of the EQCM and piezo-electrodes are discussed. A conductive oxide, ruthenium oxide (RuO2) is a promising material to be used as a diffusion barrier for metal interconnects. Characterization of copper underpotential deposition (UPD) on ruthenium and RuO2 electrodes by means of electrochemical methods and other spectroscopic methods is presented. Copper electrodeposition in platinum and ruthenium substrates is investigated at pH values higher than zero. In pH=5 solutions, the rise in local pH caused by the reduction of oxygen leads to the formation of a precipitate, characterized as posnjakite or basic copper sulfate by means of X-ray electron spectroscopy and X-ray diffraction. The mechanism of formation is studied by means of the EQCM, presenting this technique as a powerful in-situ sensing device.

No description available.

As the world has woken up to the change in climate in recent years, people's environmental concerns are forcing companies to change and find ways to manufacture products without harming nature. One area of serious concern is the electronics industries where an ever-increasing number of products gets updated with sensors and microcomputers to be part of the internet of things. Wen more things are upgraded with electronics, it's important that the production process is as environmentally friendly as possible and that the techniques used introduces a minimum amount of disturbance to the circuits in them.  To tackle this problem, this thesis presents a novel way of manufacturing PCBs without the need for soldering components, a method that increases performance and has substantial environmental benefits. When comparing conventional soldering to the electroless copper plating process presented in this thesis, electroless copper plating uses 67 times less metal and also reduces the parasitic capacitance in the PCB that comes from the solder joints. Utilizing the solder-free method means 67 times less metal needs to be mined, transported, and recycled. Moreover, since lead is a toxic heavy metal that is often part of the solder, decreasing its use in the industry is beneficial for human health and the environment. Nowadays, when the world steadily moves toward products that use technologies like 5G, technologies where higher frequencies are required, their sensitivity to capacitive disturbances from parasitics increases. In this thesis, when comparing the conventional solder method to the non-solder method to attach a capacitor, a significant reduction in phase shift of 0.9° is measured; this change is directly related to the removal of the solder and the parasitic capacitance that comes with it.

The recent developments in Low Temperature Co-fired Ceramic (LTCC) as a substrate material enable it to be used in the micro and millimetre wave range providing low dissipation factors at high frequencies, good dielectric properties and a high degree of integration for further miniaturised devices. The most common metallisation method used in LTCC technology is screen printing with high cost noble metals such as silver and gold that are compatible with the high sintering temperatures (850°C). However, these techniques require high capital cost and maintenance cost. As the commercial world requires convenient and low cost process technologies for mass production, alternative metallisation methods should be considered. As a result, electroless copper plating of fired LTCC was mainly investigated in this research. The main goals of this project were to carry out electroless plating of fired LTCC with sufficient adhesion and to extend the process to metallise closed LTCC channel structures to manufacture Substrate Integrated Waveguide (SIW) components. The objectives were focused on electroless copper deposition on fired LTCC with improved adhesion. Electroless deposits on the Sn/Pd activated LTCC surface showed poor adhesion without any surface pre-treatments. Hence, chemical etching of fired LTCC was carried out using concentrated NaOH solution. NaOH pre-treatment of LTCC led to the formation of flake like structures on the LTCC surface. A number of surface and chemical analysis techniques and weight measurements were used to investigate the mechanism of the modification of the LTCC surface. The results showed that the flake like structures were dispersed in the LTCC material and a material model for the LTCC structure was proposed. SEM EDX elemental mapping showed that the flake like structure consisted of aluminium, calcium, boron and oxygen. Further experiments showed that both the concentration of NaOH and the immersion time affect the surface morphology and the roughness of fired LTCC. The measured Ra values were 0.6 μm for untreated LTCC and 1.1 μm for the LTCC sample treated with 4M NaOH for 270 minutes. Adhesion tests including peel test and scratch test were carried out to examine the adhesion strength of the deposited copper and both tests indicated that the NaOH pre-treatment led to an improvement, with the best results achieved for samples treated with 4M NaOH. A second aspect of the research focused on the selective metallisation of fired LTCC. Excimer laser machining was used to pattern a resist film laminated on the LTCC surface. This process also roughened the substrate and created channels that were characterised with respect to the laser operating parameters. After patterning the resist layer, samples were activated using Sn/Pd catalyst solution followed by the electroless copper deposition. Electroless copper was selectively deposited only on the patterned LTCC surface. Laser parameters clearly affected the copper plating rate. Even with a similar number of shots per area, the tracks machined with higher repetition rate showed relatively more machining depth as well as good plating conditions with low resistance values. The process was further implemented to realize a complete working circuit on fired LTCC. Passive components including a capacitor and an inductor were also fabricated on LTCC using the mask projection technique of the excimer laser system. This was successful for many designs, but when the separation between conductor lines dropped below 18 μm, electroless copper started to deposit on the areas between them. Finally, a method to deposit copper films on the internal walls of closed channel structures was developed. The method was first demonstrated by flowing electroless copper solutions through silane treated glass capillaries. A thin layer (approx. 60 nm) of electroless copper was deposited only on the internal walls of the glass capillaries. The flow rate of the electroless copper solution had to be maintained at a low level as the copper deposits tended to wash away with higher flow rates. The structures were tested for transmission losses and showed low (<10dB) transmission losses in the terahertz region of the electromagnetic spectrum. The process was further applied to deposit electroless copper on the internal walls of the LTCC closed channel structures to manufacture a LTCC Substrate Integrated Waveguide (SIW).