Superfícies de silício (100) foram inicialmente pré-ativadas em uma solução diluída de ácido fluorídrico contendo PdCl2. Após essa etapa, filmes finos de Cu-Ni-P foram quimicamente depositados utilizando-se um banho químico contendo 15g/l NiSO4.6H2O; 0.2 g/l CuSO4.5H2O; 15 g/l Na2HPO2.H2O e 60 g/l Na3C6H5O7.2H2O na temperatura de 80ºC onde foi adicionado NH4OH até que o pH da solução atingisse 8,0. Foi observado que as porcentagens estequiométricas de Ni e Cu variaram substancialmente no intervalo de 1 a 3min, e se tornaram praticamente estáveis em 50% e 35%, respectivamente, quando o tempo de deposição foi superior a 3min. Além disso, a porcentagem de P permaneceu quase constante em torno de 17-18% para todos os tempos de deposição. A distribuição de alturas nas imagens FE-SEM resultou bimodal para tempos na faixa de 1 e 3min onde a predominância do modo de maior altura aumentou substancialmente para o tempo de 3min. Tal fato serviu para corroborar a evolução da morfologia superficial de grãos menores com diâmetros na faixa de 0,02 a 0,1µm, predominantemente compostos de Ni, para grãos maiores, na faixa de 0,1 a 0,3µm e predominantemente compostos de Cu. Após um recozimento a 100oC durante 10min em ambiente 20%O2+80%N2, observou-se uma mudança na morfologia superficial em que os aglomerados de fósforo (Po) desapareceram enquanto que os grãos que compunham a imagem não mudaram substancialmente de tamanho após o recozimento. Apesar do desaparecimento dos aglomerados, a concentração de fósforo ainda apresentou valor semelhante ao valor de antes do recozimento (~17-18%). As análises de difração de raios X (XRD) indicaram o aparecimento de um pico de difração alargado ao redor de 22,6º característico de óxido de fósforo (P2O5) com estrutura vítrea amorfa significando que o fósforo em estado puro foi transformado na sua forma oxidada. Por outro lado, picos substancialmente menos intensos de NiO, Ni3P e Si5P6O25 foram observados. Verificou-se também para os filmes recozidos em N2+O2 que a resistividade aumentou para todos os tempos de deposição e o poder termoelétrico medido resultou quase independente do tempo de deposição e, portanto, foi quase independente da espessura do filme para as diferentes temperaturas medidas na faixa de 40 a 120ºC. / Silicon surfaces (100) were initially pre-activated in a diluted hydrofluoric acid solution containing PdCl2. After this step, Cu-Ni-P thin films were chemically deposited using a chemical bath containing 15g/l NiSO4.6H2O; 0.2 g/l CuSO4.5H2O; 15 g/l Na2HPO2.H2O e 60 g/l Na3C6H5O7.2H2O at the temperature of 80°C where NH4OH was added until the pH of the solution reached 8.0. It was observed that the stoichiometric percentages of Ni and Cu varied substantially for deposition time in the range of 1 to 3min, and became practically invariant at 50% and 35%, respectively, when the deposition time was greater than 3min. In addition, the percentage of P remained almost constant at around 17-18% for all the deposition times. The distribution of heights in the FE-SEM images resulted bimodal for times in the range of 1 and 3min where the predominance of the higher average height mode increased substantially for the time of 3min. This fact allowed one to corroborate the superficial morphology passing from smaller grains with diameters in the range of 0.02 to 0.1µm, predominantly composed of Ni to larger grains in the range of 0.1 to 0.3µm with Cu predominant composition. After an annealing at 100°C for 10min in a 20%O2+80%N2 environment, the phosphorus (Po) agglomerates disappeared while the size of the grains did not change substantially after the annealing. Despite the disappearance of the agglomerates, the phosphorus concentration still remained unchanged (~ 17-18%). X-ray diffraction (XRD) analysis showed a broad diffraction peak around 22.6º, which is characteristic of an amorphous vitreous structure (P2O5). In addition, substantially less intense peaks showing small amounts of NiO, Ni3P and Si5P6O25 were observed. It was also verified for the N2+O2 annealed films that the resistivity increased for practically all the deposition times and the measured thermoelectric power was almost independent of the deposition time and, therefore, was also independent of the film thickness for the various temperatures in the range from 40 to 120ºC.

Les mécanismes de dissolution sélective des alliages de Cu dans l'eau du robinet et la solution de transpiration ont été étudiés. La spectroélectrochimie d'émission atomique a été utilisée. La première partie de la thèse portait sur le mécanisme de dissolution de Cu. La plupart des espèces de Cu (II) sont solubles et sont libérées dans l'eau, laissant derrière eux un film de Cu2O. Une analyse cinétique suggère que le mécanisme de dissolution implique la dissolution simultanée du Cu et la formation du film. La deuxième partie a étudié la dissolution de Cu-42Zn et Cu-21Zn-3Si-P. Un processus de dissolution en deux étapes a été proposé: une première étape d'une croissance rapide de la couche dézincitée et une deuxième étape où la croissance de la couche dézincitée était plus lente. La troisième partie s'est concentrée sur l'effet du contenu de Zn sur la dissolution des alliages de Cu-Zn. Le mécanisme de dissolution a été clarifié. Pour la phase ?: une étape initiale dans laquelle Cu et Zn sont oxydés de manière congruente, mais seulement Zn2+ a été libéré dans l'eau, Cu formant un film Cu2O et une deuxième étape où le Cu2+ a été libéré dans l'eau. Pour la phase ?', la deuxième étape est identique à la phase initiale. L'augmentation de la teneur en Zn entraîne une extension temporelle du stade initial et retardent la libération de Cu2+. La partie finale a porté sur l'effet de la libération de Sn on Cu provenant des alliages Cu-Sn. L'effet amélioré de la libération de Sn sur Cu a été identifié. Cependant, l'augmentation de la teneur en Sn n'a pas augmenté monotoniquement l'efficacité de libération de Cu des alliages de Cu-Sn, ce qui était dû à la passivité de Sn. / The selective dissolution mechanisms of Cu alloys in tap water and perspiration solution were investigated. Atomic emission spectroelectrochemistry (AESEC) was used to obtain the elemental dissolution kinetics. The first part of the thesis focused on the dissolution mechanism of Cu. Most Cu(II) species are soluble and are released into tap water, leaving behind a Cu2O film on the surface. A kinetic analysis suggests that the dissolution mechanism involves simultaneous Cu dissolution and film formation. The second part investigated the dissolution behavior of Cu-42Zn and Cu-21Zn-3Si-P. A two-stage dissolution process of dezincification was proposed: a first stage of a rapid growth of the dezincified layer and a second stage where the growth of dezincified layer was much slower. The third part concentrated on the effect of Zn content on the dissolution of Cu-Zn alloys, by investigating the dissolution behavior of alloys with various Zn content (0-45 wt%). The two-stage dissolution mechanism was further clarified. For α phase: an initial stage in which Cu and Zn are oxidized congruently, but only Zn2+ was released into water, Cu forming a Cu2O film, and a second stage where Cu was released into water in the form of Cu2+. For β' phase, the second stage is the same to the initial stage. The increase of Zn content in the alloy results in a time extension of the initial stage and retard Cu2+ release. The final part focused on the effect of Sn on Cu release from Cu-Sn alloys. The enhanced effect of Sn on Cu release was identified. However, the increase of Sn content didn’t monotonically increase the Cu release efficacy of Cu-Sn alloys, which was due to the passivity of Sn.

Au cours de cette thèse, nous avons développé la réaction d'hydroamination d'arylacétylènes en présence de quelques amines secondaires aliphatiques. Dans un premier temps, nous avons pu montrer que cette réaction peut être catalysée par différents sels de cuivres. L'utilisation catalytique de CuCN a permis la formation régio- et stéréosélective d'énamines issues d'addition d'orientation de type anti-Markovnikov d'isomèrie (E). Les conditions développées n'ont pas permis la purification des énamines observées. Pour cette raison une réduction en présence de l'agent réducteur NaBH3CN a été effectuée afin de pouvoir isoler les amines correspondantes. L'utilisation catalytique de CuCl a permis à son tour, dans certaines conditions, la synthèse régio-et stéréosélective de 1,3-diènes (1E,3E)-1,4-disubstitués. La nature des électroniques des substituants des noyaux aromatiques des alcynes employés a joué un rôle majeur en ce qui concerne la chimiosélectivité de la réaction. Dans un second temps, nous nous sommes concentrés sur l'amélioration des conditions développées et la recherche d'autres moyens plus efficaces, moins coûteux et plus verts, nous avons été en mesure de montrer que la réaction étudiée peut également s'effectuer uniquement en présence d'éthylène glycol employé en tant que solvant et promoteur de la réaction. Cette méthode permet l'accès direct aux énamines issues de l'addition d'orientation de type anti-Markovnikov d'isomérie (E) avec d'excellents rendements isolés sans qu'il soit nécessaire de purifier les énamines obtenues. / In this thesis, we developed the hydroamiantion arylacétylènes reaction in the presence of some aliphatic secondary amines. At first, we could show that this reaction can be catalyzed by various copper salts. The catalytic use of CuCN allowed the regional training and sétéréosélective enamines derived from anti-Markovnikov addition type orientation isomerism (E). Developed conditions have not allowed the purification of the observed enamines. For this reason a reduction in the presence of the reducing agent NaBH3CN was performed in order to isolate the corresponding amines. The catalytic use of CuCl enabled in turn, under certain conditions, the regio-and stereoselective synthesis of 1,3-dienes (1E, 3E) -1,4-disubstituted oxanilides. The electronic nature of substituents of the aromatic rings alkynes employed played a major role as regards the chemoselectivity of the reaction.Secondly, we concentrate developed to improve conditions and find other more efficient ways, cheaper and greener, we were able to show that the test reaction can also be carried out only in the presence ethylene glycol used as solvent and the reaction promoter. This method allows direct access to enamines from the addition anti-Markovnikov orientation type of isomerism (E) with excellent isolated yields without the need to purify the resulting enamines.

In this work it was synthesized and determinate the crystalline/molecular structure of two pré ligands triazene simetric: 1,3−bis−(4−acethylamidephenyl)triazene [H3CC(O)NHC6H4NNNC6H4NH(O)CCH3] (1) e o 1,3−bis−(4−ethoxicarbonylphenyl)triazene [H5C2OC(O)C6H4NNNC6H4C(O)OC2H5] (2), one Cu(II) complex (3) and one Co(III) complex (4), being that the two complexes involve the ligand 1,3-bis(4- methoxicarbonylphenyl)triazenide ligands previously deprotonated. Also it was presented the synthesis of pré ligand. The compound H3CC(O)NHC6H4NNNC6H4NH(O)CCH3] (1) crystallizes in monoclinic system, space group C2/c, with cell parameters a=16,0434(8)Å, b=13,0914(6)Å,c=13,0914(6)Å, β = 91.595(2)°, V=3207,2(3)Å 3 ; Z=8. The refinement of this structure converge to the follow discordance indexes wR1=0,0707e wR2=0,1621. The compound [H5C2OC(O)C6H4NNNC6H4C(O)OC2H5] (2) crystallizes in triclinic system, space group P(-1), with cell parameters a=7,65300(10) Å, b=13,4633(2) Å, c=18,0173(3) Å, α = 74,6550(10)°, β = 82,3950(10)° , у = 79,0350(10)°, 1748,5(14) Å 3 ; Z=4. The refinement of this structure converge to the follow discordance indexes wR1=0,1299 e wR2=0,1708. The complex {Cu[H3COC(O)C6H4NNNC6H4C(O)OCH3]2[(CH3)2N]2} (3) crystallizes in triclinic system, space group P(-1) with cell parameters a=7,91600(10)Å, b=9,1596(2)Å, c=13,4476(2)Å, α=105,4130(10)°, β=96,6370(10)°, у=96,1510(10)°, V=923,96(3)Å3; Z=2. The refinement of this structure converge to the follow discordance indexes wR1 = 0,0433, wR2 = 0,1293. The sphere of coordination of Cu(II) ion is formed by two deprotonated triazene ligands and two molecules of dimethylamine. The characteristic effect of Jahn-Teller s distortion expands the coordination geometry of Cu(II) ion to octahedral axially distorted. The complex {Co[H3COC(O)C6H4NNNC6H4C(O)OCH3]3} (4) crystallizes in triclinic system, space group C2/c, with cell parameters a=13,4346(7) Å, b=29,5701(17) Å, c=13,8951(7) Å, β= 107,274(2)°, V= 5271,0(5) Å3; Z=4. The refinement of this structure converge to the follow discordance indexes wR1=0,1081e wR2=0,2278. The structure of this complex presents three ligands triazenides double-toothed. The coordination geometry of the ion Co3+ is octaedric, being distorted and conferring a local asymmetry for the molecule, where it is converges in last analysis to geometry of distorted rombic coordination. / Neste trabalho sintetizou-se e determinou-se a estrutura cristalina/ molecular de dois pré-ligantes triazenos simétricos: 1,3−bis−(4−acetilamidofenil)triazeno H3CC(O)NHC6H4NNNC6H4NH(O)CCH3] (1) e o 1,3−bis−(4−etóxicarbonilfenil)triazeno [H5C2OC(O)C6H4NNNC6H4C(O)OC2H5] (2), um complexo de cobre(II)(3) e um complexo de Co(III)(4), sendo que os dois complexos envolvem o ligante 1,3-bis(4-metoxicarbonilfenil)triazenido previamente desprotonado. Também apresentou-se a síntese do referido pré-ligante. O composto [H3CC(O)NHC6H4NNNC6H4NH(O)CCH3] (1) cristaliza no sistema monoclínico, grupo espacial C2/c, com parâmetros de cela a=16,0434(8)Å, b=13,0914(6)Å, c=13,0914(6)Å, β = 91,595(2)°, V=3207,2(3)Å 3 ; Z=8. O refinamento dessa estrutura convergiu para os índices de discordância R1=0,0707e wR2=0,1621. O composto [H5C2OC(O)C6H4NNNC6H4C(O)OC2H5] (2) cristaliza no sistema triclínico, grupo espacial P(-1), com parâmetros de cela a=7,65300(10) Å, b=13,4633(2) Å, c=18,0173(3) Å, α= 74,6550(10)°, β= 82,3950(10)° , у = 79,0350(10)°, 1748,5(14) Å 3 ; Z=4. O refinamento dessa estrutura convergiu para os índices de discordância R1=0,1299 e wR2=0,1708. O complexo {Cu[H3COC(O)C6H4NNNC6H4C(O)OCH3]2[(CH3)2N]2} (3) cristaliza no sistema triclínico, grupo espacial P(-1) com parâmetros de cela a=7,91600(10)Å, b=9,1596(2)Å, c=13,4476(2)Å, α=105,4130(10)°, β=96,6370(10)°, у=96,1510(10)°, V=923,96(3)Å3; Z=2. O refinamento dessa estrutura convergiu aos seguintes índices de discordância R1 = 0,0433, wR2 = 0,1293. A esfera de coordenação do íon cobre(II) é formada por dois ligantes triazenos desprotonados e duas moléculas de dimetilamina. O efeito característico da distorção de Jahn-Teller expande a geometria de coordenação do íon Cu(II) para octaédrica distorcida axialmente. O complexo [Co[H3COC(O)C6H4NNNC6H4C(O)OCH3]3} (4) cristaliza no sistema monoclínico, grupo espacial C2/c, com parâmetros de cela a=13,4346(7) Å, b=29,5701(17) Å, c=13,8951(7) Å, β= 107,274(2)°, V= 5271,0(5) Å3; Z=4. O refinamento dessa estrutura convergiu para os seguintes índices de discordância R1=0,1081e wR2=0,2278. A estrutura deste complexo apresenta três ligantes triazenidos bidentados. A geometria de coordenação do íon Co3+ é octaédrica, ela é distorcida conferindo uma assimetria local para a molécula, onde esta converge em última análise para uma geometria de coordenação rômbica distorcida.

Abstract In this work the LCVD of copper and nickel from the precursor gases Cu(hfac)tmvs and Ni(CO)4 has been investigated. The in-house constructed LCVD system and processes and the practical utilisation of these in prototype integrated circuit edit work are described. The investigated process parameters include laser power, laser scan speed, precursor partial pressure and the effect of H2 and He carrier gases. The deposited metal conductor lines have been examined by LIMA, AFM, FIB secondary electron/ion micrography, and by electrical measurements. Furthermore, the study of experimental FIB circuit edit processes is carried out and discussed with particular emphasis on ion beam induced ESD damages. It is shown how the LCVD and FIB methods can be combined to create a novel method to carry out successfully circuit edit cases where both methods alone will fail. The combined FIB/LCVD- method is shown to be highly complementary and effective in practical circuit edit work in terms of reduced process time and improved yield. Circuit edit cases where both technologies are successfully used in a complementary way are presented. Selected examples of some special circuit edit cases include RF- circuit editing, a high resolution method for FIB-deposited tungsten conductor line resistance reduction and large area EMI shielding of IC surfaces. Based on the research it was possible for a formal workflow for the combined process to be developed and this approach was applied to 132 circuit edit cases with 85% yield. The combined method was applied to 30% of the total number of edit cases. Finally, the developed process and constructed system was commercialized.

Previous research indicates compositional variation of pentlandite [(Fe,Ni)9S8] and the effect this variation may have on the electrochemical behaviour of pentlandite is poorly understood. Pentlandite is the primary source of nickel and an important base metal sulfide (BMS) in the platinum industry. It hosts significant amounts of PGEs especially palladium and rhodium when compared to chalcopyrite and pyrrhotite. The aim of the project was to investigate the possible compositional variations of natural pentlandite and the effect of these variations on the electrochemical behavior thereof. To study possible compositional variations, single pentlandite particles - in the order of 100μm in size from flotation concentrates (PGM deposits) and massive samples (massive ore bodies) - from various sources were employed. Electron microprobe analysis indicated a compositional variation of the pentlandite particles hand-picked from the flotation concentrate samples. Variation was observed in the cobalt, iron and nickel content and this was independent of the deposit. A slight compositional variation was observed from the massive pentlandite samples. The effect the compositional variation may have on the electrochemical reactivity of pentlandite was investigated using electrochemical techniques, i.e. measurement of the polarisation resistance and mixed potential as well as performing linear anodic voltammetry, current density–transients and electrochemical impedance spectroscopy (i.e. capacitance). Poor electrochemical response of the pentlandite microelectrodes was observed. Pre–existing pores, deep pores, cracks and the brittle nature of pentlandite microelectrodes may have contributed to the poor electrochemical response of natural pentlandite particles hand-picked from the flotation concentrate. Slight compositional variations of the massive pentlandite sample influenced the electrochemical behaviour. In aerated solutions, iron enriched pentlandites were less reactive after progressive oxidation. The lower reactivity of the electrodes was a result of thick oxide films formed. This was illustrated by polarisation resistance and capacitance measurements. The lower reactivity of the electrodes was also related to the mechanism of the reduction of oxygen at oxidised passive electrode surfaces. It is however difficult to distinguish if the differences in the reactivity was a result of the Fe/Ni ratio or the influence of cobalt. Current density transients confirmed that the reactivity of a pentlandite electrode to be time dependent. The reactivity of the electrode decreased during oxidation. A variation in the electronic properties of the formed oxide film was observed. Slight compositional variation of pentlandite did not have a significant effect on the rest potential values as do changes in the type of sulfides (e.g. pyrite vs. pentlandite). This was confirmed by similar rest potential values of various pentlandite electrodes. The oxidation of synthetic pentlandite may be influenced by the chemical composition. In de-aerated solutions, anodic oxidation (as indicated by the linear anodic voltammogram) of synthetic pentlandite started at a potential lower than of the natural electrodes. In aerated solutions, the synthetic pentlandite was less reactive and formed thicker oxide films. Copyright / Dissertation (MEng)--University of Pretoria, 2010. / Materials Science and Metallurgical Engineering / unrestricted

No description available.

The West Ansil deposit was the first Cu discovery in 25 years in the Noranda Central Camp. It has a combined indicated and inferred resource of ~1.2 Mt. Grades for the indicated resource are 3.4% Cu, 0.4% Zn, 1.4 g/t Au and 9.2 g/t Ag. The bulk of the resource is located in three massive sulphide lenses (Upper, Middle and Lower) that are entirely within the Rusty Ridge Formation above the Lewis exhalite. The mineralization in all three ore lenses consists of massive pyrrhotite + chalcopyrite + magnetite. Semi-massive sphalerite is restricted to the upper and lower parts of the Middle lens. Massive magnetite occurs at the center of the Upper and Middle lenses, where it replaces massive pyrrhotite. A striking feature of West Ansil is the presence of abundant colloform and nodular pyrite (+marcasite) in the massive sulphides. Late-stage replacement of massive pyrrhotite by colloform pyrite and marcasite, occurs mostly along the upper and lower contacts of the lenses.

Dans cette thèse, la croissance des couches minces de Cu(In,Ga)Se2 (CIGS) a été optimisée et étudiée systématiquement. Une étude de calibration de la température du substrat à l'aide d'une caméra infrarouge a été effectuée. La mise au point et l'optimisation d'un procédé en 3 étapes sur un nouveau réacteur de co-évaporation a permis la réalisation de cellules solaires avec un rendement de 16,7 % sans couche antireflet. La clé de ce développement a été le contrôle du gradient de Ga. Les inhomogénéités ont été caractérisées par une nouvelle approche basée sur le décapage chimique de l'absorbeur. Des caractérisations ex situ à différentes étapes de la croissance ont révélé l'importance des phases intermédiaires sur les mécanismes de croissance, le gradient de composition en profondeur et la morphologie des couches. L'interface absorbeur/couche tampon a été étudiée en variant la composition en surface du CIGS pour des couches tampons de CdS et Zn(S,O). Il a été montré qu'une adaptation de la composition en surface est favorable pour le remplacement de la couche tampon de CdS par Zn(S,O). Des rendements équivalents ont été obtenus pour ces deux matériaux si ils sont combinés avec la composition da Ga optimale correspondante. Des mesures courant-tension à basse température indiquent une position de la bande de condition plus basse que celle trouvée dans la littérature. Pour une optimisation ultérieure de nos cellules solaires vers et au-delà de 20 % de rendement, trois axes sont proposées : L'optimisation de la finalisation de l'absorbeur, la réduction de l'absorption par la couche tampon et l'incorporation de potassium ayant des effets positifs sur les propriétés du CIGS. / In this thesis the growth of Cu(In,Ga)Se2 (CIGS) thin films by co-evaporation has been optimised and studied systematically. Being a key parameter, the substrate temperature has been calibrated with an infrared camera. The set-up and optimisation of a three-stage process at a new co-evaporation reactor has led to cell efficiencies up to 16.7 % without anti-reflection coating. The key for this achievement was the control of the Ga gradient. In depth inhomogeneities have been characterised by a novel method based on chemical etching of the absorber layer. Break-off experiments during the 3-stage process unveiled the importance of precursor and intermediate phases on growth mechanisms, in-depth compositional gradients and film morphology. The absorber/buffer layer interface has been investigated by varying the CIGS surface composition for solar cells both with a CdS and a Zn(O,S)-based buffer layer. It has been shown that an adaptation of the CIGS surface composition is beneficial for the replacement of the CdS by a Zn(O,S) buffer layer. Equivalent efficiencies can be achieved with the two buffer layers if each of them is combined with the corresponding optimal interface Ga composition. Low temperature current-voltage measurements indicate a lower conduction band offset at the CIGS/Zn(O,S) buffer layer as reported in the literature. For the further optimisation of our CIGS devices towards 20 % and beyond three routes are proposed: the optimisation of the absorber layer deposition finalisation, the reduction of detrimental absorption in the buffer layer (larger band gap or thinner buffer) and the incorporation of potassium which has beneficial effects on CIGS.

Orientador: Marcelo Augusto Assunção Sanches / Resumo: Recentes estudos têm abordado o aprimoramento de sensores de pressão com a finalidade de reproduzir a sensibilidade da pele humana para ser utilizada em robôs. Dentre diversos materiais disponíveis na literatura, destaca-se o material piezoresistivo à base do elastômero Polidimetilsiloxano e Cobre Dendritico (Cu-PDMS), devido à tecnologia empregada na produção destes sensores. Este trabalho trata a síntese e a caracterizações de compósitos piezoresistivo Cu-PDMS para confecção de sensores de pressão, na forma matricial, para aplicações biomédicas, como palmilhas instrumentadas, sensor on/off, dentre outros. Com finalidade de análise do material atuando como sensor de pressão, foram fabricadas e testadas amostras com diferentes composições. Para o estudo das propriedades de cada amostra, foram realizadas caracterizações elétricas (resistência elétrica com pressão variável, condutividade ao longo do tempo e espectroscopia de impedância), mecânicas (caracterização mecânica do material, ensaio de tração e ensaio termogravimétrico) e Microscopia Eletrônica de Varredura (MEV). Os resultados obtidos mostram as faixas possíveis para utilização do material como sensor de pressão, e os fatores que podem influenciar o seu emprego. / Abstract: Recent studies have addressed the improvement of pressure sensors in order to reproduce the sensitivity of human skin to be used in robots. Among the various materials available in the literature, the piezoresistive material based on the polydimethylsiloxane and Dendritic Copper (Cu-PDMS) elastomer stands out, due to the technology used in the production of these sensors. This work deals with the synthesis and characterization of Cu-PDMS piezoresistive composites for making pressure sensors, in matrix form, for biomedical applications such as instrumented insoles, on / off sensor, among others. In order to analyze the material acting as a pressure sensor, samples with different compositions were manufactured and tested. For the study of the properties of each sample, electrical characterizations (electrical resistance with variable pressure, conductivity over time and impedance spectroscopy), mechanical characterizations (mechanical characterization of the material, tensile test and thermogravimetric test) and Scanning Electron Microscopy were performed (ME V). The results obtained show the possible ranges for using the material as a pressure sensor, and the factors that can influence its use. / Mestre