京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第21107号 / 工博第4471号 / 新制||工||1695(附属図書館) / 京都大学大学院工学研究科電気工学専攻 / (主査)教授 和田 修己, 教授 松尾 哲司, 教授 小野寺 秀俊 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

Esta dissertação aborda o cálculo da taxa de crescimento da tensão de restabelecimento transitória (TCTRT), considerando o caso de falha na barra, durante a abertura do primeiro polo e o cálculo da tensão de restabelecimento transitória (TRT) nos primeiros instantes de tempo, incluindo o efeito da capacitância. Os principais casos possíveis de falha na barra foram analisados e os resultados demonstraram a precisão das expressões obtidas. Normalmente, o cálculo da TCTRT e da TRT é feito por meio de simulações em programas de transitórios eletromagnéticos em que há rotinas específicas para a extração dos valores destas, porém, em determinadas condições, podem ocorrer oscilações ou imprecisões numéricas. Por ser um assunto de grande interesse convém desenvolver expressões que possam esclarecer resultados duvidosos sem a necessidade de artifícios de redução do passo de integração a valores muitas vezes não factíveis. As expressões obtidas neste trabalho podem ser utilizadas não só para se obter de forma precisa e simplificada os valores da taxa de crescimento da tensão de restabelecimento transitória de um circuito real, assim como os valores da TRT nos primeiros instantes de tempo. / This study is focused on the rate of rise of transient recovery voltage (RRTRV) calculation considering the case of bus fault, during the first pole to open, and also includes the transient recovery voltage (TRV) calculation, in the first instants of time, including the capacitance effect. The main cases of bus fault have been evaluated and demonstrate that the expressions developed in this study are relevant and with good precision. Usually, the RRTRV and the TRV are calculated with the use of simulation programs, using specific routines, nevertheless, in certain conditions, there might be oscillations and numeric imprecisions which requires a mathematic expression. This topic is of great interest and it is important to have mathematical expressions that could clarify doubtful results. The expressions obtained in this study can be use in a very simples and effective mode to calculate RRTRV and the TRV in the first instants of time, considering a real life circuit.

Esta dissertação aborda o cálculo da taxa de crescimento da tensão de restabelecimento transitória (TCTRT), considerando o caso de falha na barra, durante a abertura do primeiro polo e o cálculo da tensão de restabelecimento transitória (TRT) nos primeiros instantes de tempo, incluindo o efeito da capacitância. Os principais casos possíveis de falha na barra foram analisados e os resultados demonstraram a precisão das expressões obtidas. Normalmente, o cálculo da TCTRT e da TRT é feito por meio de simulações em programas de transitórios eletromagnéticos em que há rotinas específicas para a extração dos valores destas, porém, em determinadas condições, podem ocorrer oscilações ou imprecisões numéricas. Por ser um assunto de grande interesse convém desenvolver expressões que possam esclarecer resultados duvidosos sem a necessidade de artifícios de redução do passo de integração a valores muitas vezes não factíveis. As expressões obtidas neste trabalho podem ser utilizadas não só para se obter de forma precisa e simplificada os valores da taxa de crescimento da tensão de restabelecimento transitória de um circuito real, assim como os valores da TRT nos primeiros instantes de tempo. / This study is focused on the rate of rise of transient recovery voltage (RRTRV) calculation considering the case of bus fault, during the first pole to open, and also includes the transient recovery voltage (TRV) calculation, in the first instants of time, including the capacitance effect. The main cases of bus fault have been evaluated and demonstrate that the expressions developed in this study are relevant and with good precision. Usually, the RRTRV and the TRV are calculated with the use of simulation programs, using specific routines, nevertheless, in certain conditions, there might be oscillations and numeric imprecisions which requires a mathematic expression. This topic is of great interest and it is important to have mathematical expressions that could clarify doubtful results. The expressions obtained in this study can be use in a very simples and effective mode to calculate RRTRV and the TRV in the first instants of time, considering a real life circuit.

Submitted by Renata Lopes (renatasil82@gmail.com) on 2016-02-11T10:15:45Z No. of bitstreams: 1 marciodecarvalhofilho.pdf: 1308253 bytes, checksum: ce4bec8646b462983e485a5bcad4f5c1 (MD5) / Approved for entry into archive by Adriana Oliveira (adriana.oliveira@ufjf.edu.br) on 2016-02-26T11:53:11Z (GMT) No. of bitstreams: 1 marciodecarvalhofilho.pdf: 1308253 bytes, checksum: ce4bec8646b462983e485a5bcad4f5c1 (MD5) / Made available in DSpace on 2016-02-26T11:53:11Z (GMT). No. of bitstreams: 1 marciodecarvalhofilho.pdf: 1308253 bytes, checksum: ce4bec8646b462983e485a5bcad4f5c1 (MD5) Previous issue date: 2014-08-13 / CAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / Neste trabalho desenvolveu-se uma ferramenta para análise de falhas, sendo os modelos de diversos equipamentos do sistema elétrico considerados de forma detalhada, permitindo a análise multifásica do sistema, representando-o da maneira mais generalizada e realista possível. A metodologia desenvolvida para análise de falhas baseia-se no método de injeção de correntes a n condutores em coordenadas retangulares, onde utiliza-se o método de Newton-Raphson no processo de solução e todas as grandezas são definidas diretamente em coordenadas de fase. A modelagem de todo o sistema elétrico é realizada baseando-se em elementos que compõem as estruturas dos equipamentos em seus modelos, sendo que estes elementos podem estar conectados das mais diversas maneiras. As próprias condições de curto-circuito são modeladas por meio de elementos, conectados em diferentes configurações. Também a inclusão dos controles é feita de forma otimizada. Com a modelagem considerada, o sistema a ser solucionado é o estritamente necessário, e, portanto, a metodologia apresenta-se bastante eficiente. A metodologia também se mostra bastante flexível, pois é capaz de representar equipamentos com qualquer número de condutores nas mais diversas configurações, permitindo representar desequilíbrios, acoplamentos mútuos, sistemas de aterramento e cabos neutros explicitamente, e permitindo modelar diversos tipos de falhas, dentre outras características. Desta forma, a metodologia possibilita análises bastante completas, sendo que a representação do sistema pode ser feita com o nível de detalhe que for possível e desejável em cada situação. A ferramenta desenvolvida é bastante abrangente sendo capaz de simular sistemas equilibrados ou desequilibrados, radiais ou reticulados, diversos tipos de falhas (como curtos-circuitos em derivação, interno e simultâneo, ou abertura série), podendo ser aplicada em sistemas de transmissão, subtransmissão, distribuição, e industriais, inclusive de grande porte. / In this work a tool for fault analysis was developed, and models of many electrical systems equipment were considered in detail, allowing the analysis of multiphase systems by representing it in a more general and realistic way possible. The methodology developed for fault analysis is based on the current injection method in rectangular coordinates, where the Newton-Raphson method is used in the solution process and all quantities are defined directly in phase coordinates. The modeling of the entire electrical system is made based on elements which assemble the structures of equipment in their models, and these elements can be connected in various ways. Even the short circuit conditions are modeled by elements connected in different configurations. Also the inclusion of controls is done optimally. With the considered modeling the system to be solved is the strictly necessary, and therefore, the method shows to be efficient. The methodology is also very flexible because it is able to represent equipments with any number of conductors in many different configurations, allowing the representation of imbalances, mutual couplings, groundings and neutral cables explicitly, and allowing to model various types of faults, among other features. Therefore, the methodology allows fairly complete analysis, and the representation of the system can be made with the level of detail that is possible and desirable in every situation. The tool developed is quite ample being able to simulate balanced or unbalanced, radial or meshed systems, various types of failures (such as shunt short circuits, internal faults, simultaneous fault, and series opening), it can be applied to the transmission, subtransmission, distribution and industrial systems, including large scale systems.

Orientador: Dilson Amancio Alves / Resumo: Neste trabalho, apresenta-se os resultados da análise comparativa da influência de formas alternativas de representação das barras PV nas características de convergência do método de Newton-Raphson considerando equações de injeção de corrente. O método proposto para a solução do problema de fluxo de potência é baseado em equações de injeção de corrente expressas em coordenadas retangulares. São apresentados também os resultados da comparação com outros métodos baseados em equações de injeção de potência expressas em coordenadas polares e retangulares, bem como com os baseados em injeção de corrente com formulação retangular, objeto principal do estudo. Nas análises de desempenho foram utilizados os sistemas testes do IEEE de 14, 30, 57, 118 e 300 barras, e duas configurações, uma de 638 e outra de 787 barras, do sistema Sul-Sudeste Brasileiro. Nas análises consideraram-se diferentes variações na relação R/X dos ramos e diferentes carregamentos. Os resultados obtidos demonstram que a forma proposta de representação das barras PV melhora a característica de convergência dos métodos de solução do problema de fluxo de potência baseado em equações de injeção de corrente. / Abstract: This paper presents the results of a comparative analysis of the influence of PV bus representation on the convergence characteristics of Newton-Raphson Current Injection method. The proposed method to solve the power flow problem is based on current injection equations written in rectangular coordinates. The results of comparison with other methods based on power injection equations expressed in polar and rectangular coordinates as well as those based on current injection with rectangular formulation, the main object of the study, are also presented. Performance analyzes were performed on the IEEE test systems 14, 30, 57, 118 and 300 buses, and two configurations, one of 638 and another of 787 buses, of the South-Southeast Brazilian system. Several R/X transmission line ratios and loading conditions were considered. The results show that the proposed PV bus representation improves the convergence characteristic of the power flow formulation based on current injection equations. / Mestre

No description available.

AC and DC impedances of switching power converters are used for the stability analysis of modern power electronics systems at three-phase AC and single-phase DC interfaces. Therefore, a small-signal characterization algorithm for switching power converter, which is based on FFT, will be presented and explained. The presented extraction algorithm is general and can be used to obtain other small-signal transfer functions of arbitrary power converter switching simulation models. Furthermore, FFT algorithm is improved by using cross power spectral density functions for identification, resulting in an algorithm, which is more noise immune. Both small-signal identification algorithms are validated in simulations, and CPSD algorithm is used in experimental measurement procedure. Several wide bandwidth injection signals, among which are chirp, multi-tone, pulse and white noise, are compared and theoretically analyzed. Several hardware examples are included in the analysis. The second part of the dissertation will focus on the modeling of small-signal input dq admittance of multi-pulse diode rectifiers, providing comparison between well-known averaged value models (AVMs), parametric averaged value models (PAVM), the switching simulation model and hardware measurements. Analytical expressions for all four admittances present in the dq matrix are derived and analyzed in depth, revealing the accuracy range of the averaged models. Furthermore, a hardware set-up is built, measured and modeled, showing that the switching simulation model captures nonlinear sideband effects accurately. In the end, a multi-pulse diode rectifier feeding a constant power load is analyzed with modified AVM and through detailed simulations of switching model, proving effectiveness of the proposed modifications. The third part describes implementation and design of a single-phase multi-level single-phase shunt current injection converter based on cascaded H-bridge topology. Special attention is given toward the selection of inductors and capacitors, trying to optimize the selected component values and fully utilize operating range of the converter. The proposed control is extensively treated, including inner current, outer voltage loop and voltage balancing loops. The designed converter is constructed and integrated with measurement system, providing experimental verification. The proposed multi-level single-phase converter is a natural solution for single-phase shunt current injection with the following properties: modular design, capacitor energy distribution, reactive element minimization, higher equivalent switching frequency, capability to inject higher frequency signals, suitable to perturb higher voltage power systems and capable of generating cleaner injection signals. Finally, a modular interleaved single-phase series voltage injection converter, consisting of multiple paralleled H-bridges is designed and presented. The decoupling control is proposed to regulate ac injection voltage, providing robust and reliable strategy for series voltage injection. The designed converter is simulated using detailed switching simulation model and excellent agreement between theory and simulation results are obtained. The presented control analysis treats different loads, examining robustness of the circuit to load variations. Simulation model and hardware prototype results verify the effectiveness of the proposed wide-bandwidth identification of small-signal dq impedances via single-phase injections. / Ph. D.

State estimation plays an important role in modern power systems. The errors in the telemetered measurements and the connectivity information of the network will greatly contaminate the estimated system state. This dissertation provides solutions to suppress the influences of these errors. A two-stage state estimation algorithm has been utilized in topology error identification in the past decade. Chapter II discusses the implementation of this algorithm. A concise substation model is defined for this purpose. A friendly user interface that incorporates the two-stage algorithm into the conventional state estimator is developed. The performances of the two-stage state estimation algorithms rely on accurate determination of suspect substations. A comprehensive identification procedure is described in chapter III. In order to evaluate the proposed procedure, a topology error library is created. Several identification methods are comparatively tested using this library. A remote measurement calibration method is presented in chapter IV. The un-calibrated quantities can be related to the true values by the characteristic functions. The conventional state estimation algorithm is modified to include the parameters of these functions. Hence they can be estimated along with the system state variables and used to calibrate the measurements. The measurements taken at different time instants are utilized to minimize the influence of the random errors. A method for auto tuning of measurement weights in state estimation is described in chapter V. Two alternative ways to estimate the measurement random error variances are discussed. They are both tested on simulation data generated based on IEEE systems. Their performances are compared. A comprehensive solution, which contains an initialization process and a recursively updating process, is presented. Chapter VI investigates the errors introduced in the positive sequence state estimation due to the usual assumptions of having fully balanced bus loads/generations and continuously transposed transmission lines. Several tests are conducted using different assumptions regarding the availability of single and multi-phase measurements. It is demonstrated that incomplete metering of three-phase system quantities may lead to significant errors in the positive sequence state estimates for certain cases. A novel sequence domain three-phase state estimation algorithm is proposed to solve this problem.

This thesis experimentally demonstrates four approaches of frequency control of magnetic auto-oscillations in spin Hall nano-oscillators (SHNOs). The frequency can be changed in the GHZ-range by external magnetic fields as shown in this work. This approach uses large electromagnets, which is inconvenient for future applications. The nonlinear coupling between oscillator power and frequency can be used to control the latter one by changing the applied direct current to the SHNO. The frequency can be controlled over a range of several 100 MHz as demonstrated in this thesis. The first part of the experimental chapter demonstrates the synchronization (injection-locking) between magnetic auto-oscillations and an external microwave excitation. The additionally applied microwave current generates a modulation of the effective magnetic field, which causes the interaction with the auto-oscillation. Both synchronize over a range of several 100 MHz. In this range, the auto-oscillation frequency can be controlled by the external stimulus. An increase of power and a decrease of line width is achieved in the synchronization range. This is explained by the increased coherence of the auto-oscillations. A second approach is the synchronization of auto-oscillations to an alternating magnetic field. This field is generated by a freestanding antenna, which is positioned above the SHNO. The second part of the experimental chapter introduces a bipolar concept of SHNOs and its experimental demonstration. In contrast to conventional SHNOs, bipolar SHNOs generate auto-oscillations for both direct current polarities and both directions of the external magnetic field. This is achieved by combining two ferromagnetic layers in an SHNO. The combination of two different ferromagnetic materials is used to switch between two frequency ranges in dependence of the direct current polarity since it defines the layer showing auto-oscillations. This approach can be used to change the frequency in the GHz-range by switching the direct current polarity. / Diese Arbeit demonstriert experimentell vier verschiedene Methoden der Frequenzkontrolle magnetischer Auto-Oszillationen in Spin Hall Nano-Oszillatoren (SHNOs). Durch externe magnetische Felder kann die Frequenz im GHz-Bereich geändert werden, wie es in dieser Arbeit gezeigt wird. Dies erfordert jedoch große Elektromagneten, deren Nutzung für zukünftige Anwendungen der SHNOs nicht geeignet sind. Aufgrund der nichtlinearen Kopplung zwischen Oszillatorleistung und Oszillatorfrequenz, lässt sich letztere durch den Versorgungsstrom beeinflussen. Dies ist typischerweise in einem Bereich von mehreren 100 MHz möglich, wie es an mehreren Stellen dieser Arbeit gezeigt wird. Im ersten Abschnitt des Ergebnisteils wird die Synchronisation der magnetischen Auto-Oszillationen zu einer externen Mikrowellenanregung demonstriert. Der zusätzlich eingespeiste Mikrowellenstrom erzeugt eine Modulation des effektiven Magnetfelds, was zur Wechselwirkung mit den Auto-Oszillationen führt. Diese synchronisieren über eine Frequenzdifferenz von mehreren 100 MHz. In diesem Bereich lässt sich die Frequenz der Auto-Oszillation mit der äußeren Frequenz steuern. Innerhalb des Synchronisationsbereichs wird außerdem eine Erhöhung der Leistung und eine Verringerung der Linienbreite der Auto-Oszillationen festgestellt. Dies wird mit einer Erhöhung der Kohärenz der Auto-Oszillationen erklärt. Neben der zusätzlichen Einspeisung eines Mikrowellenstroms können die Auto-Oszillationen auch zu einem magnetischen Wechselfeld synchronisieren, welches von einer frei beweglichen Antenne erzeugt wird, die über dem SHNO positioniert wird. Im zweiten Abschnitt des Ergebnisteils wird ein bipolares Konzept eines SHNO vorgestellt und seine Funktionsfähigkeit experimentell nachgewiesen. Im Vergleich zu konventionellen SHNOs erzeugen bipolare SHNOs Auto-Oszillationen für beide Polaritäten des elektrischen Versorgungsstroms und beide Richtungen des externen Magnetfelds. Dies wird durch die Kombination zweier ferromagnetischer Lagen in einem SHNO erreicht. Die Kombination unterschiedlicher ferromagnetischer Materialien kann genutzt werden, um die Mikrowellenfrequenz in Abhängigkeit der Stromrichtung zu ändern, da diese bestimmt in welcher Lage die Auto-Oszillationen erzeugt werden können. Durch eine geeignete Materialkombination kann die Frequenz im GHz-Bereich geändert werden, wenn die Strompolarität umgekehrt wird.

Designs for deep ultraviolet (DUV) edge emitting laser diodes (LDs) based on the wurtzite III-nitride (III-N) material system are presented. A combination of proprietary and commercial advanced semiconductor LD simulation software is used to study the operation of III-N based DUV LDs theoretically. Critical factors limiting device performance are identified based on an extensive literature survey. A comprehensive design parameter space is investigated thoroughly with the help of advanced scripting capabilities. Several design strategies are proposed to eliminate the critical problems completely or partially. A DUV LD design is proposed based exclusively on AlInN active layers grown epitaxially on bulk AlN substrates because AlInN offers a promising alternative to AlGaN for the realization of LDs and LEDs operating in the DUV regime. The proposed AlInN-based design also features a tapered electron blocking layer (EBL) instead of a homogeneous one. Tapered EBLs redistribute the interfacial polarization charge volumetrically throughout the entire EBL thickness via compositional grading, and eliminate the parasitic inversion layer charge. AlGaN based DUV LD designs are explored also because at present, it may be difficult to grow AlInN epitaxially with superior crystalline quality. Polarization charge matching is proposed to improve electron and hole wavefunction overlap within the active region. Although the strategy of polarization charge matching has already been proposed in the literature to enhance performance of visible wavelength LEDs and LDs, the proposed design presents the first demonstration that polarization charge matching is also feasible for DUV LDs operating at sub-300 nm wavelengths. A lateral current injection (LCI) LD design is proposed featuring polarization-charge-matched barriers and regrown Ohmic contacts to avoid a group of issues related to the highly inefficient p-type doping of wide bandgap III-N materials in vertical injection designs. The proposed design partially decouples the problem of electrical injection from that of optical confinement. Although the idea of an LCI LD design has been proposed in the literature in the 90s to be used as longer wavelength active sources in optoelectronic integrated circuits using GaInAsP/InP and related material systems, the proposed design is the first theoretical demonstration that this concept can be applied to DUV LDs based on III-N material system. To solve the problem of hole transport in vertical injection designs, a DUV LD design based exclusively on AlGaN material system is presented, featuring an inverse-tapered p-waveguide layer instead of an EBL. Several EBL designs are investigated, and compared with conventionally-tapered EBL design. Through judicious volumetric redistribution of fixed negative polarization charge, inverse tapering may be exploited to achieve nearly flat valence band profiles free from barriers to hole injection into the active region, in contrast to conventional designs. Numerical simulations demonstrate that the inverse tapered strategy is a viable solution for efficient hole injection in vertical injection DUV LDs operating at shorter wavelengths (< 290 nm).