The demand for electrical energy is steadily increasing. Highly efficient organic solar cells based on mixed, strongly absorbing organic molecules convert sunlight into electricity and, thus, have the potential to contribute to the worlds energy production. The continuous development of new materials during the last decades lead to a swift increase of power conversion efficiencies (PCE) of organic solar cells, recently reaching 12%. Despite these breakthroughs, the usage of highly complex organic molecules blended together to form a self-organised absorber layer results in complicated morphologies that are poorly understood. However, the morphology has a tremendous impact on the photon-to-electron conversion, affecting all processes ranging from light absorption to charge carrier extraction. This dissertation studies the role of phase-separation of the self-organised thin film blend layers utilized in organic solar cells. On the molecular scale, we manipulate the phase-separation, using different molecule combinations ranging from the well-known ZnPc:C 60 blend layers to highly efficient oligothiophene:C60 blend layers. On the macroscopic scale, we shape the morphology by depositing the aforementioned blend layers on differently heated substrates (in-vacuo substrate temperature, Tsub). To characterise the manufactured blend layers, we utilize high resolution microscopy techniques such as photoconductive atomic force microscopy, different electron microscopic techniques, X-ray microscopy etc., and various established and newly developed computational simulations to rationalise the experimental findings. This multi-technique, multi-scale approach fulfils the demands of several scientific articles to analyse a wide range of length scales to understand the underlying optoelectronic processes. Varying the mixing ratio of a ZnPc:C60 blend layer from 2:1 to 6:1 at fixed in vacuo substrate temperature results in a continuous increase of surface roughness, decrease of short-circuit current, and decrease of crystallinity. Additionally performed density functional theory calculations and 3D drift-diffusion simulations explain the observed crystalline ZnPc nanorod formation by the presence of C60 in the bulk volume and the in turn lowered recombination at crystalline ZnPc nanorods. Moving to oligothiophene:C60 blend layers used in highly efficient organic solar cells deposited at elevated substrate temperatures, we find an increase of phase-separation, surface roughness, decrease of oligothiophene-C60 contacts, and reduced disorder upon increasing Tsub from RT (PCE=4.5%) to 80 °C (PCE=6.8%). At Tsub =140 °C, we observe the formation of micrometer-sized aggregates on the surface resulting in inhomogeneous light absorption and charge carrier extraction, which in turn massively lowers the power conversion efficiency to 1.9%. Subtly changing the molecular structure of the oligothiophene molecule by attaching two additional methyl side chains affects the thin film growth, which is also dependent on the substrate type. In conclusion, the utilized highly sensitive characterisation methods are suitable to study the impact of the morphology on the device performance of all kinds of organic electronic devices, as we demonstrate for organic blend layers. At the prototypical ZnPc:C60 blend, we discovered a way to grow ZnPc nanorods from the blend layer. These nanorods are highly crystalline and facilitate a lowered charge carrier recombination which is highly desirable in organic solar cells. The obtained results at oligothiophene: C60 blends clearly demonstrate the universality of the multi-technique approach for an in-depth understanding of the fragile interplay between phase-separation and phase-connectivity in efficient organic solar cells. Overall, we can conclude that both molecular structure and external processing parameters affect the morphology in manifold ways and, thus, need to be considered already at the synthesis of new materials.

Afin de développer de nouvelles applications aux couches minces d’oxydes fonctionnels, il est nécessaire de comprendre les corrélations entre leurs modes de croissance, leur microstructure, leur structure à l’interface avec le substrat, et leurs contraintes et propriétés physiques. Pour cela, une étude par spectroscopie infrarouge et THz des systèmes modèles films/substrats a été exécutée, et confrontée à des calculs théoriques, en particulier sur des couches épitaxiales de SrTiO3/Si(001), VO2/Gd2O3/Si(111) et des couches d’alumine sur alliage d’aluminium. Les caractéristiques vibrationnelles des couches minces sont ici étudiées dans l’infrarouge moyen et lointain sur la ligne AILES du Synchrotron SOLEIL, et simulées à l’aide de la Théorie de la Fonctionnelle de la Densité (DFT), permettant ainsi la première détermination de la structure cristalline de ces couches. Ainsi, une comparaison entre la structure bidimensionnelle et tridimensionnelle des matériaux est effectuée. L’effet des contraintes dans les couches est évalué grâce aux variations des énergies de vibration par rapport au matériau massif. L’influence des conditions expérimentales de l’épitaxie dans la structure locale interatomique de couches minces de SrTiO3/Si(001) est évaluée. D’autre part, la nature de l’interface STO-Si peut être caractérisée par les modes de vibration du réseau cristallin. Enfin, la transition métal-isolant (MIT) des couches minces de VO2 sur des substrats de Gd2O3/Si(111) est étudié par spectroscopie IR ; les variations de propriétés optiques et diélectriques pendant la transition, ainsi que les changements d’intensité des modes de vibration, indiquent que la transition est entraînée par une corrélation électronique et une basse température. La phase monoclinique M1 de VO2 est un isolant de Mott. Ce résultat peut aider à un meilleur contrôle des MIT de couches minces de VO2 pour de futures applications. / In order to understand the relations between growth, microstructure, interface structure, strain, and physical properties in functional oxide thin films for further applications, a study of infrared and THz spectroscopy combined with theoretical calculation has been performed on the films/substrates model systems, in particular epitaxial SrTiO3/Si(001), VO2/Gd2O3/Si(111) films and alumina/alloy films. The vibrational characteristics of the crystal structure of films have been investigated in the mid and far infrared ranges on the AILES beamline at Synchrotron SOLEIL. This experimental vibrational study has been combined with Density Functional Theory (DFT) simulation to allow for the first measure of the crystalline structure of these thin films. The 2-dimensional lattice modification compared with the bulk materials has been discussed. The strain effect in the films can be evaluated on the phonon shifts compared with the crystal spectrum. The influences of epitaxial conditions on the local interatomic structure of SrTiO3/Si(001) thin films have been estimated. The nature of STO-Si interface can be characterized by the phonon modes. The metal–insulator transition (MIT) of VO2 thin films on Gd2O3/Si(111) substrate have been studied by IR spectroscopy. The variations of optical and dielectric properties during the MIT, as well as the phonon intensities, indicate that the MIT is driven by electron correlation and the low temperature M1 monoclinic phase of VO2 is a Mott insulator. This result may help to better understand and control the MITs of VO2 thin films in the device applications.

The constant trend of device miniaturization along with ever-growing list of unusual behaviour of nanoscale materials has fuelled the recent research in fabrication and applications of ultrathin (~2 nm diameter) nanowires. Although semiconductor nanowires of this dimension is well-researched, molecular-scale single-crystalline metal nanowires have not been addressed in details. Such single crystalline Au nanowires are formed by oriented attachment of Au nanoparticles along [111] direction. A very low concentration of extended defects in these wires result in a high electrical conductivity, making them ideal for nanoscale interconnects. Other metal nanowires, e.g. Ag and Cu, have very low absorption co-efficient useful for fabrication of transparent conducting films. On the other hand, because of the reduced dimensions, there exists a tantalizing possibility of dominating quantum effects leading to their application in sensing and actuation. Also, speaking in terms of atomic structure, these systems suffer from intense surface stress, and the atomistic picture can be drastically different from bulk. Thus, although a myriad of applications are possible with ultrathin metal nanowires, a rigorous systematic knowledge of their atomic and electronic structure is not yet available. This thesis is the first one to model such computationally demanding systems with emphasis on their possible applications. In this thesis, we have explored various structural and electronic aspects of one-dimensional ultrathin nanowires with ab initio density functional theory coupled with experiments. The merit of Au nanowires has been tested as nanoscale interconnects. From atomistic point of view, these FCC Au nanowires exhibit an intriguing relaxation mechanism, which has been explored by both theory and experiment. The primary factor governing the relaxation mechanism was found to be the anisotropic surface stress of the bounding facets, and it is extended to explain the relaxation of other metallic nanowires. Our studies suggest that AuNWs of this dimension show semiconductor-like sensitivity towards small chemical analytes and can be used as nanoscale sensors. Also, we have found that further reducing the diameter of the Au-nanowires leads to opening of a band gap.

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