Made available in DSpace on 2014-06-11T19:25:33Z (GMT). No. of bitstreams: 0 Previous issue date: 2010-06-28Bitstream added on 2014-06-13T18:28:59Z : No. of bitstreams: 1 gordo_vo_me_ilha.pdf: 1058796 bytes, checksum: 2c8438704796726349dfe606c2595b4b (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Neste trabalho foi estudado o sistema vítreo (100-x)% (80% TeO2-20% WO3)-(x)% Yb2O3, onde x = 0; 0,1; 0,2; 0,3; 0,4 e 0,5%. As técnicas de difração de raios-X, espectroscopia no infravermelho, espectroscopia Raman e espectroscopia no UV-Vis foram usadas para caracterizar os efeitos da dopagem sobre as propriedades estruturais e ópticas dos vidros estudados. Usando os dados de espectroscopia na região espectral ultravioleta-visível foi possível observar que não houve mudança das freqüências de corte para cada composição e ainda calcular a energia de “gap” e a energia de cauda de Urbach. Usando os dados de fotoluminescência observam-se picos que indicam o desdobramento dos níveis de energia dos estados 2F7/2 e 2F5/2 dos íons de Yb3+. Para os comprimentos de onda de excitação de 514,5 a 488,0 nm, crescem as taxas de absorção do sistema vítreo TW, transferência de carga para o estado 2F5/2 do Yb3+ e da transição radiativa 2F5/2 2F7/2, aumentando, desta forma, a intensidade da fotoluminescência. Já para os comprimentos de onda de excitação 457,9 e 476,5 nm as taxas de absorção do sistema vítreo TW, a transferência de carga para o estado 2F5/2 do Yb3+ e a transição radiativa 2F5/2 2F7/2 são as mesmas e, consequentemente, a intensidade da fotoluminescência é constante. / This work presents the study on the glassy system (100-x)% (80% 20% TeO2-WO3) - (x)% Yb2O3 where x = 0, 0.1, 0.2, 0.3, 0.4 and 0 5%. The techniques of X-ray diffraction, infrared spectroscopy, Raman spectroscopy and UV-Vis were used to characterize the effects of Yb doping on the structural and optical properties of the glasses. Using data from spectroscopy ultraviolet-visible spectral region was observed that there was no change of cutting frequencies for each compound and were calculate the energy gap and Urbach tail energy. Using the data of photoluminescence peak is observed indicating the splitting of energy levels of states 2F7/2 and 2F5/2 of Yb3+ ions. The rate of electron transition probability is influenced by temperature. To the excitation wavelength of 514.5 to 488.0 nm, growing rates of absorption of the glass system TW, charge transfer to the state 2F5/2 of Yb3+ and the radiative transition 2F5/2 2F7/2, increasing thus the photoluminescence intensity. As for the excitation wavelength of 476.5 and 457.9 nm absorption rates of the TW glass system, the charge transfer state to the 2F5/2 of Yb3+ and the radiative transition 2F5/2 2F7/2 are the same and, hence the photoluminescence intensity is constant.

The thesis studies the sintering behaviours and mechanical properties of perovskite-structured Ba0.5Sr0.5Co0.8Fe0.2O3-δ (BSCF) ceramics. The sintering behaviours of BSCF are studied by sintering BSCF powder using a series of sintering temperatures and dwell times. Under all circumstances, only a cubic perovskite structure is identified in as-sintered samples. The relative density of BSCF increases with increasing sintering temperature and dwell time, but shows a more significant increase with increasing temperature. While the grain size increases with increasing sintering temperature and dwell time, it is found that the increasing temperature contributes much more significantly than increasing dwell time in grain growth. The shape of grain size distribution profile is independent of sintering temperature and dwell time, but the profile shifts with different sintering conditions. The grain maintains an aspect ratio of 1.8 irrespective of sintering conditions. Similar findings are also made on the Ni-doped BSCF, but it is found that Ni doping inhibits the grain growth and retards the densification of BSCF while it has little influence on the grain size distributions and grain aspect ratio distributions. The grain growth exponent (n) and apparent activation energy (Q) are also systematically studied. It is found that grain boundary diffusion is the dominant controlling mechanism for BSCF while both grain boundary and lattice diffusions are the equally dominant controlling mechanisms for BSCF-Ni8. The fracture stress of BSCF is measured by both three-point and ring-on-ring bending tests at room and high temperatures. The fracture stress determined by three-point bending tests is consistently higher than that value measured by ring-on-ring tests for a given temperature. By utilising Weibull statistics a close prediction is made of the three-point values from the ring-on-ring values. Compared with the Young’s modulus of BSCF obtained from three-point bending tests between RT and 800 °C, the values determined from ring-on-ring tests shows a fairly good agreement. However, the Young’s modulus measured by both bending tests is lower than that value determined by micro-indentation tests. Hardness and fracture toughness are independent of grain size and grain orientation. Porosity is the dominant factor in Young’s modulus, hardness and fracture toughness of BSCF. The intrinsic hardness, intrinsic Young’s modulus and intrinsic fracture toughness of BSCF are also determined. The subcritical crack growth (SCG) of BSCF is also studied using constant load method at RT and constant stress rate method at 800 °C. It is found that that BSCF is not susceptible to SCG at RT but becomes relatively sensitive to SCG at 800 °C. The results are subsequently used as a basis for a strength–probability–time (SPT) lifetime prediction. Ni doping increases the Young’s modulus, hardness and fracture toughness of BSCF determined micro-indentation tests at RT. Both hardness and Young’s modulus show a non-monotonic trend with Ni doping content, which is attributed to the porosity and secondary phase. The intrinsic hardness, intrinsic Young’s modulus and intrinsic fracture toughness of 8 mol% Ni-doped BSCF are determined. Dopants have little influence on grain orientation and the distribution of grain boundary misorientation angles of BSCF.

Made available in DSpace on 2014-10-09T12:38:08Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:04:43Z (GMT). No. of bitstreams: 1 05650.pdf: 11452261 bytes, checksum: ebbc39f29ed2ce2849bf7f8bc188fac7 (MD5) / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Tese (Doutoramento) / IPEN/T / Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP / FAPESP:93/03991-2

Made available in DSpace on 2014-12-17T14:13:44Z (GMT). No. of bitstreams: 1 RenataCC.pdf: 254009 bytes, checksum: ec26d57fd9dfbde4d983f684c849d1b4 (MD5) Previous issue date: 2009-07-31 / A presente pesquisa descritiva do tipo documental centrou-se em analisar as san??es disciplinares aplicadas em caso de doping, a atletas profissionais e n?o profissionais que atuam no Brasil. A amostragem foi levantada atrav?s de um processo de sele??o n?o probabil?stica intencional, utilizando-se como sujeitos, 18 atletas de uma modalidade esportiva dita n?o profissional: atletismo e 19 de uma modalidade profissional: futebol, de ambos os sexos, os quais tenham sido flagrados pelo exame de controle de dopagem da Confedera??o Brasileira de Atletismo (CBAt) e da Confedera??o Brasileira de Futebol (CBF). Como instrumentos de an?lise, foram utilizados os diagn?sticos de dopagem positiva, arquivados junto a CBAt e CBF; al?m dos processos julgados pelo Superior Tribunal de Justi?a Desportiva (STJD) do atletismo entre os anos de 2003/2007 e os processos julgados pelo STJD do futebol no ano de 2007. Os resultados demonstram que as san??es aplicadas aos desportistas diferem muito entre as modalidades inclu?das no estudo. Enquanto encontramos, no atletismo a aplica??o de san??es em conformidade com o C?digo Mundial Anti Doping (CMAD) com penalidades de no m?nimo de dois anos, no futebol encontrou-se grande n?mero de absolvi??es ou aplica??o de penalidades conforme o C?digo Brasileiro de Justi?a Desportiva (CBJD) que prev? penalidades muito inferiores. Por outro lado verificou-se ser a modalidade Futebol a que mais realiza controles, sendo certo que durante o ano de 2007 o desporto profissional realizou 4832 testes, ao passo que o desporto dito n?o profissional realizou t?o somente 281. O car?ter multidisciplinar do trabalho 12 p?de ser caracterizado pelo emprego de t?cnicas que envolveram direito, educa??o f?sica, farmacologia

CoordenaÃÃo de AperfeiÃoamento de Pessoal de NÃvel Superior / Os semicondutores magnÃticos atraÃram a atenÃÃo de muitos cientistas nos Ãltimos anos devido, principalmente, a aplicaÃÃes tecnolÃgicas no ramo da spintrÃnica. Esses semicondutores podem ser desenvolvidos por meio de um processo chamado dopagem, onde alguns Ãtomos da matriz semicondutora sÃo substituÃdos aleatoriamente por Ãtomos magnÃticos. Esta propriedade possibilita a fabricaÃÃo de uma variedade de dispositivos eletrÃnicos a partir do mesmo material semicondutor. Neste trabalho utilizou-se a tÃcnica de moagem mecÃnica de altas energias para realizar a dopagem dos Ãxidos TiO2, SnO2 e In2O3 com Fe2O3, que foram caracterizados estruturalmente por difraÃÃo de raios-x e espectroscopia MÃssbauer. A sÃntese foi realizada em trÃs tipos de ferramentas de moagem que influenciaram no desenvolvimento da reaÃÃo. Foram formados compostos com fÃrmulas Sn(1-x)Fe(x)O2, Ti(1-x)Fe(x)O2 e {(In(1-x)Fe(x)}2O3, com valores de concentraÃÃo do dopante magnÃtico x de 2, 5 e 10% em Ãtomos. Utilizando jarra de poliacetal e esferas de zircÃnia foram sintetizadas amostras de TiO2 dopadas com Fe2O3. No entanto, a energia produzida por estas ferramentas nÃo foi suficiente para completar a formaÃÃo do composto. Com uma jarra e esferas de aÃo inox foram produzidas amostras de TiO2 dopadas com Fe2O3, que por sua vez foram contaminadas com impurezas de ferro metÃlico proveniente das ferramentas utilizadas. AlÃm disso, essas impurezas contribuÃram para a formaÃÃo de outra fase, a ilmenita (FeTiO3). Para alcanÃar um grau de pureza, essas amostras foram submetidas à lavagem com soluÃÃo de HCl para a retirada do ferro metÃlico, porÃm a fase referente a ilmenita nÃo foi eliminada. Compostos formados por TiO2, SnO2 e In2O3 dopados com Fe2O3 foram sintetizados em uma jarra de alumina com esferas de zircÃnia. Estas amostras nÃo apresentaram impurezas indesejÃveis e nÃo houve formaÃÃo de outras fase. Enquanto os compostos baseados em TiO2 e SnO2 mantiveram suas estruturas cristalinas originais, o composto {In(1-x)Fe(x)}2O3 sofreu uma mudanÃa de fase cristalina, da estrutura cÃbica original do In2O3 para hexagonal do tipo corundum. Resultados obtidos das medidas de espectroscopia MÃssbauer e difraÃÃo de raios-x mostraram que, com o aumento do tempo de moagem, o Fe^{3+} entra na matriz dos compostos semicondutores substituindo o Ti^{4+}, Sn^{4+} ou In^{3+} em sÃtios octaÃdricos. Foi observado tambÃm a formaÃÃo de um sÃtio com deficiÃncia de oxigÃnio nos compostos finais que pode ser atribuÃdo ao processo e longos tempos de moagem ou ainda ao desbalanÃo estequiomÃtrico dos compostos precursores usados na moagem. / Magnetic semiconductors have attracted the attention of scientists in recent years due, mainly, to technological applications in the field of spintronics. These semiconductors can be developed by a process called doping, where some atoms of the semiconductor matrix are randomly replaced by magnetic atoms. This property enables the fabrication of a manifold of electronic devices from the same semiconductor material. In this work the technique of high energy mechanical milling was applied to synthesize TiO_2, SnO2 and In2O3 doped with Fe2O3. The samples were structurally characterized by x-ray diffraction and MÃssbauer spectroscopy. The synthesis was performed using three types of milling tools which influenced the outcome of the reactions. Compounds with formulas Sn(1-x)Fe(x)O2, Ti(1-x)Fe(x)O2 and {In(1-x)Fe(x)2}O3 were formed, with values of magnetic dopant concentration x of 2, 5 and 10% in atoms. Samples of Fe2O3-doped TiO2 were processed using a jar of polyacetal and zirconia spheres. However, the energy produced by these tools was not sufficient to complete the formation of the compound. Samples of TiO2 doped with Fe2O3 were successfully produced using stainless steel jar and spheres. The final compound was find to be contaminated with metallic iron impurities from the tools used. Furthermore, these impurities contributed to the formation of another phase, ilmenite (FeTiO3). To achieve purity, the samples were HCl washed for removal of metallic iron, but the phase related to ilmenite was not eliminated. Moreover, samples of Fe2O3-doped TiO2, SnO2, and In2O3 were synthesized using an alumina jar and zirconia spheres. These simples showed no undesirable impurities and no formation of other phases. While compounds based on TiO2 and SnO2 maintained their original crystalline structures, the compound {In(1-x)Fe(x)2O3} underwent a change in crystal phase, from its original cubic structure to a hexagonal corundum structure type. Results obtained from X-ray diffraction and MÃssbauer spectroscopy showed that with increasing milling time Fe^{3+} enters in the semiconductor matrices substituting Ti^{4+}, Sn^{4+} or In^{3+} in octahedral sites. It was also observed the formation of oxygen deficient sites in the final compounds that may be attributed to long milling times or to stoichiometric imbalance between the precursor compounds used in the milling processes.

Submitted by Paula Quirino (paula.quirino@ufpe.br) on 2015-03-10T19:01:18Z No. of bitstreams: 1 DISSERTACAO VERSAO FINAL.pdf: 1786499 bytes, checksum: 5a29a7f82f0466077ab1a1f451c1b339 (MD5) / Made available in DSpace on 2015-03-10T19:01:18Z (GMT). No. of bitstreams: 1 DISSERTACAO VERSAO FINAL.pdf: 1786499 bytes, checksum: 5a29a7f82f0466077ab1a1f451c1b339 (MD5) Previous issue date: 2013 / FACEPE / O presente estudo buscou apreender parte da realidade social retratada na Decisão Fundamentada da Agência Antidoping dos Estados Unidos (USADA), na qual foram descritas todas as violações as normas do antidoping cometidas pelo respeitado e reverenciado ciclista Lance Armstrong e sua equipe a U.S. Postal. Para tal, baseou-se na análise dos testemunhos dos ex-ciclistas da referida equipe, o Código da Agência Mundial Antidoping (AMA-WADA), o histórico dos testes antidoping realizados pelo atleta, a Investigação Independente promovida pela União Ciclística Internacional sobre o teste positivo para EPO nas amostras coletadas do desportista durante o Tour de France de 1999 e o relatório técnico do teste positivo para EPO nas amostras do mesmo ano, todos estes documentos anexados a referida Decisão. Adotando uma perspectiva teórica e metodológica oriunda da sociologia simétrica de Bruno Latour, podemos perceber que a confirmação do doping do desportista só foi possível graças ao trabalho de um conjunto de híbridos tecnológicos, os quais revelaram a presença de inúmeros actantes ilícitos performando e delimitando as práticas do atleta. Deste modo, imprimiu-se um novo olhar sobre a carreira do ciclista, tendo em vista a interação deste com os seus aliados EPO (eritropoietina), Cortisona, Testosterona, Doping Sanguíneo, Actoveig, entre outros híbridos que serão apresentados no decorrer da análise. Recontar a história do ciclista sob a ótica de seus alistamentos nos fez perceber que o ciclismo, por ele praticado, não existe sem a concorrência dos distintos não-humanos que ajudam a estabilizar seu conceito, como prática desportiva. Em si tratando das provas científicas que embasaram a Decisão Fundamentada da USADA, observou-se os momentos de produção e significação da realidade nos quais o idioma performativo do doping remodelou o conceito de ciclismo profissional, praticado por Armstrong e muitos outros de sua geração.

Orientador: Vitor Baranauskas / Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-05T18:10:58Z (GMT). No. of bitstreams: 1 Correa_WashingtonLuizAlves_D.pdf: 3351242 bytes, checksum: 8f30a26c68d4c1e73a72d065eaedb4f9 (MD5) Previous issue date: 2004 / Resumo: Estudamos processos de dopagem do diamante crescido por deposição química a partir da fase vapor (diamante CVD) com a introdução de impurezas dopantes durante o crescimento do diamante em reatores do tipo filamento-quente. Focalizamos nossa pesquisa na dopagem do diamante com boro, ou nitrogênio, ou enxofre, visando obter diamantes com propriedades semicondutoras com condutividade eletrônica (tipo n) ou condutividade por lacunas (tipo p). Foram utilizadas contaminações intencionais utilizando: trimetil borano (B(CH3)3), ou amônia (NH3), ou dissulfeto de carbono (CS2), misturados com metano e diluídos em hidrogênio. As amostras foram caracterizadas por microscopia eletrônica de varredura (SEM), espectroscopia Raman, espectroscopia de foto-elétrons excitados por raios X (XPS), espectroscopia de emissão de raios X excitado por feixe de prótons (PIXE) e efeito Hall. As dopagens do diamante do tipo p e do tipo n foram obtidas com contaminações de boro e enxofre, respectivamente. O diamante dopado com nitrogênio não apresentou propriedades semicondutoras / Abstract: We studied the diamond doping processes with introduction of doping impurities during the diamond growth in the chemical vapor deposition (CVD) technique, using a hot-filament reactor. Our research focused the use of boron, nitrogen or sulphur atoms in order to obtain diamond films with semiconductor properties of electronic (n-type) or hole (p-type) current transport mechanisms. Trimethyl-borane (B(CH3)3), or ammonia, or carbon disulphide (CS2), mixed with methane and hydrogen were used in the feed gas mixture. The diamond samples were characterized by scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Proton-induced X-ray emission (PIXE) and Hall effect. p-type and n-type diamonds have been obtained with boron and sulphur doping, respectively. However, the nitrogen doped samples do not presented semiconductor properties / Doutorado / Engenharia de Eletronica e Comunicações / Doutor em Engenharia Elétrica

Made available in DSpace on 2014-10-09T12:38:08Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:04:43Z (GMT). No. of bitstreams: 1 05650.pdf: 11452261 bytes, checksum: ebbc39f29ed2ce2849bf7f8bc188fac7 (MD5) / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Tese (Doutoramento) / IPEN/T / Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP / FAPESP:93/03991-2

Interfaces between graphene and dissimilar materials are needed for making devices, but those interfaces also modify the graphene properties due to charge transfer and/or symmetry breaking. In this dissertation we investigate the technology of preparing graphene on different substrates and how the substrate influences the electronic properties of graphene. Synthesizing large area graphene on late transition metals by chemical vapor deposition is a promising approach for many applications of graphene. Among the transition metals, nickel has advantages because the good lattice match and strong interaction between graphene/Ni(111) enables the synthesis of a single domain of graphene on Ni(111). However, the nickel substrate alters the electronic structure of graphene due to substrate induced symmetry breaking and chemical interaction of the metal d-band with graphene. Similar chemical interactions are observed for other transition metals with a d-band close to the Fermi-level. On the other hand, graphene mainly physisorbs on transition metals with a lower lying d-band center. In this thesis we investigate the growth of graphene on nickel by vacuum chemical vapor deposition (CVD). In particular, we present our studies of graphene synthesis on Ni(111) substrates. We demonstrate the self-limiting monolayer of single domain of graphene can be grown on single crystal Ni(111). Our studies also show that selective twisted bilayer graphene can be grown by carbon segregation on Ni(111)-films. To modify the interaction between graphene and the nickel substrate we investigated the intercalation of tin. In the case of graphene physisorbed on weakly interacting metals, some charge doping of graphene occurs due to work function differences between graphene and the metal. Using x-ray photoemission spectroscopy (XPS) we correlate the charge doping of graphene on different metals with the C-1s binding energy. This study demonstrate that XPS can be used to determine the Fermi-level in graphene. While metal intercalation can alter the interaction with the substrate it does not avoid overlap of electronics states at the Fermi-level. Therefore a band gap material should be inserted between the graphene and the metal growth substrate (in this case Pt(111)). This is accomplished by oxidation of intercalated iron at elevated oxygen pressure. We demonstrate that a 2D-FeO layer can be formed in between graphene and the Pt(111) surface. We discuss the role of the 2D-FeO moiré-structure on the nanoscale electronic properties of graphene. To date good quality graphene can only be grown by CVD on late transition metals. To obtain graphene on other substrates the graphene can be transferred mechanically from a growth substrate to various other materials. We demonstrate that this transfer can also be achieved to tungsten, an early transition metal that easily forms a carbide. In our studies to avoid oxidation of the tungsten substrate and reaction of the graphene with the tungsten substrate under thermal treatment, protection of the W(110) surface with sulfur has been explored. For the integration of graphene into device architectures, graphene has to be interfaced with high-κ dielectrics. However, because of the inert nature of graphene, most high-κ do not wet graphene and thus preventing formation of contiguous dielectric layers. Yttrium oxide (Y2O3) has been demonstrated to be an exception and we characterized the growth of Y2O3 on various metal supported graphene and graphene transferred to SiO2. We showed that such a Y2O3 layer can also act as seeding layer for the growth of alumina, which is the preferred dielectric material in many applications. Finally, we investigate the charge doping of graphene in a metal/graphene/dielectric stack and find that the charge doping of graphene is a function of both the work function of the metal as well as the covering dielectric. Thus the dielectric layer can modify the charge doping of graphene at a metal contact.

Magister Scientiae - MSc / In the present study we report the synthesis and characterization of iron oxide magnetic nanoparticles doped with zinc in an attempt to enhance the magnetic properties. The nanoparticles were prepared via the co-precipitation route and capped with 3-phosphonopropionic acid (3-PPA). The amount of zinc dopant was varied to yield nanoparticles with the general formula ZnxFe3-xO4 (x=0, 0.1, 0.2, 0.3, 0.4). Characterization was carried out using high resolution transmission electron microscopy (HRTEM), X-ray diffraction spectroscopy (XRD), energy-dispersive X-ray spectroscopy (EDS), Fourier transform infrared spectroscopy (FTIR), thermogravimetric analysis (TGA) and superconducting quantum interference device (SQUID) analysis. Results from HRTEM, XRD and SQUID confirm that doping took place and x=0.2 was found to be the doping limit for these nanoparticles with a maximum size of 10.73 nm and saturation magnetization of 73.37 emu/g. The EDS further confirmed successful doping with zinc, while FTIR and TGA confirmed successful capping with 3-PPA. Despite agglomeration at all doping levels, these nanoparticles show great potential for application in breast cancer diagnostic studies.