Sport as a kind of physical activity should, above all, be a way of entertainment for people. However, one cannot forget to mention the other aspects, which sport provides to people, whether from the point of view of health or psychology. It particularly concerns the improvement of both physical and mental form, prevention against health problems, relaxation, improvement of communication, cooperation etc. Sport has become a phenomena of these days. Shining careers, tremendous popularity and last but not least sometimes huge amounts of money offered to the best sportsmen lead to swindles as a matter of course. Nowadays, the desire for success can overcome the limits of fair play, and therefore a lot of sportsmen tend to the use of illegal aids in order to have an advantage over their rivals. In spite of that, doping is not the term only connected with top-performance sports, but also with recreation sports. Dope substances are used on all sporting levels at the present. The main aim of this work is to introduce readers to the problems of using dopes and their detection. The work describes the ways in which doping checks proceed, and in which sports and on which levels doping checks can be anticipated. Keywords Doping, blood tests, testing, doping controls , prohibited substances , prohibited metods...

Poços e super-redes delta-doping tipo são sistemas semicondutores de interesse considerável tanto para a pesquisa básica como para aplicações em dispositivos. Neste trabalho desenvolvemos um novo método para o cálculo de potenciais e estruturas de bandas deste tipo de sistemas. O método baseia-se na expansão em ondas planas da equação da massa efetiva multibandas, usa matrizes de energia cinética de qualquer tamanho e leva em conta o potencial de troca e correlação de uma maneira mais rigorosa do que em trabalhos anteriores. São calculados perfis de potencial e estrutura de minibandas e subbandas bem como a posição do nível de Fermi de uma série de poços isolados e super-redes delta-doping tipo p. São estudadas também as diferenças entre super-redes delta-doping tipo p e tipo n. A partir deste método foi desenvolvido ainda um procedimento de cálculo de espectros de fotoluminescência dos poços estudados. Este procedimento baseia-se nas forças de oscilador das transições entre os buracos confinados no interior do poço e os elétrons livres da banda de condução. Ele é utilizado para calcular funções envelope, integrais de superposição e espectros de transições diretas e indiretas. Por fim, comparamos espectros calculados teoricamente com resultados experimentais extraídos da literatura. / p-type ro-doping quantum wells and superlattices are semiconductor systems of considerable interest for basic research and device applications. In this work, a method for calculating potentials and band structures of such systems is developed. The method relies on a plane wave expansion of the multiband effective mass equation, uses kinetic energy matrices of any size, and takes exchange correlation into account in a more rigorous way than this was done before. The method is used to calculate potential profiles, subband and miniband structures as well as Fermi level positions for a series of p-type delta-doping quantum wells and superlattices. The differences between n- and p-type delta-doping structures are studied. In addition to this we developed a procedure within this method to ca1culate photoluminescence (PL) spectra of the wells studied. It depends on the oscillator strength between the holes inside the wells and the free electrons on the conduction band. We use this procedure to calculate envelope functions, overlap integrals and direct and indirect transitions spectra. Finally, we compare our theoretical calculations of PL spectra with experimental results extracted from the literature.

The interconnect fabric that provides electrical connectivity to active devices is an essential component to modern semiconductor chips. As the dimensions of these devices are scaled to improve performance and keep pace with Moore's Law, the local Cu interconnects must scale in parallel. Intrinsic material properties of Cu result in spiking electrical resistivity with scaling and present a looming bottleneck to chip performance. In this thesis, we introduce graphene as a replacement material to Cu interconnects in support of future chip scaling. In particular we focus on experimentally establishing fundamental mechanisms of chemically doping graphene via the basal plane and edge passivation, with broad contributions that extend beyond the focus of local interconnects.

<p>Quantum Dot Infrared Photodetectors (QDIPs) are important alternatives to conventional infrared photodetectors with high potential to provide required detector performance, such as higher temperature operation and multispectral response, due to the 3-D quantum confinement of electrons, discrete energy levels, and intrinsic response to perpendicular incident light due to selection rules. However, excessive dark current density, which causes QDIPs to underperform theoretical predictions, is a limiting factor for the advancement of QDIP technologies. The purpose of this dissertation research is to achieve a better understanding of dopant incorporation into the active region of QDIPs, which is directly related to dark current control and spectral response. From this dissertation research, doping related dipole fields are found to be responsible for excessive dark current in QDIPs. </p><p>InAs/GaAs QDIPs were grown using solid source molecular beam epitaxy (MBE) with different doping conditions. The QDIPs were optically characterized using photoluminescence and Fourier transform infrared (FT-IR) spectroscopy. Devices were fabricated using standard cleanroom fabrication procedures. Dark current and capacitance measurements were performed under different temperature to reveal electronic properties of the materials and devices. A novel scanning capacitance microscopy (SCM) technique was used to study the band structure and carrier concentration on the cross section of a quantum dot (QD) heterostructure. In addition, dark current modeling and bandstructure calculations were performed to verify and better understand experimental results.</p><p>Two widely used QDIP doping methods with different doping concentrations have been studied in this dissertation research, namely direct doping in InAs QD layer, and modulation doping in the GaAs barrier above InAs QD layer. In the SCM experiment, electron redistribution has been observed due to band-bending in the modulation-doping region, while there is no band-bending observed in directly doped samples. A good agreement between the calculated bandstructure and experimental results leads to better understanding of doping in QD structures. The charge filling process in QDs has been observed by an innovative polarization-dependent FT-IR spectroscopy. The red-shift of QD absorbance peaks with increasing electron occupation supports a miniband electronic configuration for high-density QD ensembles. In addition, the FT-IR measurement indicates the existence of donor-complex (DX) defect centers in Si-doped QDIPs. The existence of DX centers and related dipole fields have been confirmed by dark current measurements to extract activation energies and by photocapacitance quenching measurements. </p><p>With the understanding achieved from experimental results, a further improved dark current model has been developed based on the previous model originally established by Ryzhii and improved by Stiff-Roberts. In the model described in this dissertation, two new factors have been considered. The inclusion of background drift current originating from Si shallow donors in the low bias region results in excellent agreement between calculated and measured dark currents at different temperatures, which has not been achieved by previous models. A very significant effect has been observed in that dark current leakage occurs due to the dipole field caused by doping induced charge distribution and impact-ionized DX centers. </p><p>Last but not least, QDIPs featuring the dipole interface doping (DID) method have been designed to reduce the dark current density without changing the activation energy (thus detection wavelength) of QDIPs. The DID samples involve an InAs QD layer directly-doped by Si, as well as Be doping in the GaAs barrier on both sides of the QD layer. The experimental result shows the dark current density has been significantly reduced by 104 times without any significant change to the corresponding activation energy. However, the high p-type doping in the GaAs barrier poses a challenge in that the Fermi level is reduced to be well below the QD energy states. High p-type doping is reported to reduce the dark current, photocurrent and the responsivity of the devices. </p><p>To conclude, it is significant to identify to effect of Si-induced defect centers on QDIP dark currents. The subsequent study reveals doping induced dipole fields can have significant effects on QDIP device performance, for example, causing charge leakage from QDs and reducing activation energy, thereby increasing dark current density. The DID approach developed in this work is a promising approach that could help address these issues by using controlled dipole fields to reduce dark current density without changing the minimum detectable energy of QDIPs.</p> / Dissertation

Thermoelectric (TE) materials, which can convert temperature gradients directly into electricity and vice versa, have received renewed interest for waste heat recovery and refrigeration applications. Higher manganese silicides (HMS) are promising p-type TE materials due to the abundance of the constituent elements, environmental friendliness, and good chemical stability. The objective of this dissertation is to establish a better understanding of the structure-TE properties relationship of HMS with a complex Nowotny chimney ladder structure. The focus of this work is on the investigations of the phonon dispersion of HMS crystals and the effects of chemical doping and nanostructuring on the TE properties of polycrystalline HMS. HMS crystals have been synthesized by the Bridgeman method for inelastic neutron scattering measurements of the phonon dispersion. In conjunction with density functional theory calculations, the results clearly show the presence of numerous low-lying optical phonon branches, especially an unusually low-energy optical phonon polarization associated with the twisting motions of the Si helical ladders in the Mn chimneys. The obtained phonon dispersion can be used to explain the low and anisotropic thermal conductivity of HMS crystals. (Al,Ge) double doping was found to be effective in modifying the electrical properties of HMS polycrystals. The peak thermoelectric power factor occurs at an optimized hole concentration of 1.8~2.2×10²¹ cm⁻³ at room temperature. On the other hand, Re substitution can suppress the lattice thermal conductivity to approach the calculated minimum value corresponding to the amorphous limit. Meanwhile, the thermoelectric power factor does not markedly change at low Re content of x ≤ 0.04 although it drops considerably with increasing Re content. Hence, the peak ZT has been improved to ~0.6 in both systems. The effects of nanostructuring on the TE properties have been studied in the cold-pressed samples and ball-milled samples. The thermal conductivity was reduced remarkably by decreasing the grain size. It is found that the grain size effects are more significant at low temperature. However, it is difficult to reduce the grain size to less than 50 nm without the formation of impurity phases by ball milling. These facts limit the ZT enhancement of the nanostructured HMS at high temperatures in this study. / text

This dissertation discusses the influence of nitrogen doping (N-doping) on the electronic and catalytic properties of carbon nanotubes (CNTs). These properties have been studied using a variety of techniques, in order to both qualitatively and quantitatively analyze the relationship between the nitrogen concentration and observed properties. Chapter 1 provides a general overview of CNTs and N-doping and details some of the previous research from our group. Chapter 2 discusses the assembly and characterization of free-standing electrode mats, which are used in order to understand the intrinsic physicochemical properties of the material without relying on the secondary influence of another conductive support. Raman microscopy, X-Ray photoelectron spectroscopy, scanning and scanning-tunneling electron microscopy, as well as electrochemical methods were all used to demonstrate the viability of the mat electrodes for further experiments. Chapter 3 addresses the examination of a range of nitrogen concentrations in order to better understand the effects of nitrogen concentration on the electrochemical and electrical properties such as the differential capacitance, density of states at the Fermi level (D(E[subscript F])), bulk conductivity and work function. These properties were studied using a variety of techniques, including UV-photoelectron spectroscopy, electrochemical impedance spectroscopy and conductive four point probe. Chapter 4 investigates the inherent catalysis of the nitrogen doped CNTs (N-CNTs) with respect to O2 reduction, and a complex mechanism is proposed. Electrochemical methods such as cyclic and linear sweep voltammetries as well as thermo-gravimetric analysis and gasometric analysis were all employed to determine heterogeneous decomposition rates as well as to detect intermediates of the O₂ reduction reaction. Chapter 5 discusses the electrocatalytic degradation of free cyanide (CN⁻) at the N-CNT mat electrodes. These results both provide further support for the mechanism discussed in Chapter 4, and present the opportunity for a potential application of N-CNTs for environmental purposes. Specifically, spectroscopic and electrochemical methods, in conjunction with theoretical models show both that the presence of CN⁻ does not inhibit O2 reduction, and that it can be effectively converted to cyanate (OCN⁻) at the N-CNT electrodes. Future work involving the assembly and characterization of transparent N-CNT films is discussed in Chapter 6. / text

Gyms are populated by more and more people and there is an increased interest in wellness and health. However, there is a downside to the culture that people choose to step into. Exercise can go too far and take unhealthy directions. The purpose of this study is to examine how norms are created in the gym culture and how unhealthy behaviour is reproduced inside the walls of the gym. We have also done research about how a local gym identifies and handles deviant behaviour such as the use of doping and eating disorders. Methods used are qualitative interviews and participating observations. Our theoretical framework has consisted of social constructivist theories of Peter Berger and Howard S. Becker such as the socially constructed reality and deviant careers. Our results have shown that it’s difficult to draw a line between what is healthy and unhealthy. The gym atmosphere and it`s message, the gym visitors and how they relate to values, interact and confirm each other mutually. This creates the gym norm. The gym handles deviant behaviour by conversations with its visitors and by having close ties to medical care. Knowledge is the key to a healthy approach towards training and also to the identification of deviant behaviour.

The world of sport has recently been inundated by stories of doping. These reports are not limited to a select few individuals or sports, but seemingly are spread across sports. At first, it was mostly members of the sports community voicing their discontent, but soon actors outside of the sports community, such as government committees, became interested. Anti-doping policies were created to reduce doping; however, these policies were created independently of government and vary in effectiveness. The most visible variances are between professional and amateur sports. Accordingly, this paper investigates why there is variation between professional and amateur anti-doping policies. This investigation is done in a qualitative fashion and employs the Most Similar System of Design (a comparative method) to identify that factors result in the differences. The paper also contributes to the field by creating and organizing the ethics of doping. Furthermore, it compares the various existing approaches to anti-doping policy by analysing the anti-doping policies of the PGA, IOC, WADA, and the MLB. Subsequently, the paper identifies seven obstacles facing anti-doping regulators and identifies new policy tools that could aid anti-doping policies. Finally, it closes with policy recommendations for the future. This paper is comprehensive: it introduces the topic of anti-doping, the subsequent definitions, explains the ethical considerations, answers why there is variation between professional and amateur anti-doping policies, and provides policy recommendations.

Graphene is a two-dimensional sp2 hybridized carbon lattice that is also the fundamental building block of graphite. Graphene has attracted significant interest recently due to its distinctive electrical, optical and mechanical properties. These properties have spurred research directed at modifying graphene for use in a variety of electronic, optoelectronic, and sensor technologies. However, before graphene can be used in products, it is necessary to find methods to tune, modify, grow and integrate graphene features while substantially boosting device performance and maintaining current processing compatibility and ease of integration with existing manufacturing infrastructure. This dissertation focuses on developing techniques for controllably doping the graphene layer through scalable, industry friendly and simple chemical doping; using self-assembled monolayer compounds, photo-acid and photo-base generators, polymers and metal-organic species. We have, in fact, demonstrated simple p-n junctions fabricated in this manner. Characteristic I-V curves indicate the superposition of two separate Dirac points from the p and n regions, confirming an energy separation of neutrality points within the complementary regions; Raman studies of these methods have shown that these processes result in extremely low defect levels in the graphene. Our simple methods for producing patterned doping profiles in graphene films and devices open up a variety of new possibilities for forming complex doping profiles in a simple manner in graphene. This work can enable rapid testing, such as controlled work function tuning, complex doping profiles and simple post-fabrication tuning, of concepts for graphene that may be useful in both interconnect and transparent conductor applications. In addition to graphene doping, we also investigated approaches to the synthesis of few-layer graphene flakes, since current techniques still produce inferior materials. Exfoliation of Graphene Sheets by an Electron Donor Surfactant was demonstrated to generate few-layers graphene flakes that rival the electrical quality of reduce graphene-oxide (rGO) flakes. Last but not least, Diels-Alder adducts on silica were explored as a controllable carbon precursor for pristine graphene; these allow for a rational direct-growth-of-graphene-on-surface reaction mediated by copper catalyst, without the use of flammable precursors, such as methane, that are used in current methods of chemical vapor deposition synthesis of graphene.

Zugl.: Hagen, Fernuniv., Diss., 2006