Global ETD Search

21	Digital DLTS studies on radiation induced defects in Si, GaAs and GaN Meyer, Walter Ernst. January 2006 (has links) Thesis (Ph.D.)(Physics)--University of Pretoria, 2006. / Includes summary. Includes bibliographical references. Available on the Internet via the World Wide Web.
22	Investigation of deep level defects in GaN:C, GaN:Mg and pseudomorphic AlGaN/GaN films Armstrong, Andrew M. 21 November 2006 (has links) No description available. Gallium Nitride deep level defects wide bandgap semiconductors
23	Comparing the Development of Intragroup Trust and Performance Feedback Influence in Interdisciplinary and Homogeneous Teams Thompson, Nicole J. 21 September 2011 (has links) The present study seeks to advance understanding of intragroup trust and team diversity. The dynamic interrelationships between intragroup trust, information sharing, and performance were examined over feedback cycles in interdisciplinary and homogeneous teams. In a three-hour lab session, participants completed a management simulation task in teams of four. Performance feedback was administered and process variables were measured periodically throughout the task. Several hypotheses were posed predicting differences between team type as well as the dynamic influence of performance feedback on the nature of trust. Findings both add to knowledge about the development of trust as well as point to future research directions. Although trust displayed an overall positive linear trend independent of team type, Cycle 1 performance feedback contributed to the trust trajectory. Additionally, considerations for operationalizations of information sharing and team performance are discussed in light of findings. / Master of Science Team Trust Interdisciplinary Deep-Level Diversity Performance Feedback
24	Scanned Probe Spectroscopy of Traps in Cross-Sectioned AlGaN/GaN Devices Gleason, Darryl A. 04 September 2019 (has links) No description available. Physics Electrical Engineering gallium nitride GaN aluminum gallium nitride AlGaN high electron mobility transistor HEMT deep-level transient spectroscopy DLTS SP-DLTS cross-sectioned defect deep level trap trapped charge
25	Quantitative spectroscopy of reliability limiting traps in operational gallium nitride based transistors using thermal and optical methods Sasikumar, Anup January 2014 (has links) No description available. Electrical Engineering Materials Science
26	Characterizing and Understanding Performance Limiting Defects in β-Ga<sub>2</sub>O<sub>3</sub> Transistors McGlone, Joseph Francis, II January 2022 (has links) No description available. Electrical Engineering Nanotechnology Gallium oxide Ga2O3 defect spectroscopy traps defects reliability dynamic on-resistance deep level transient spectroscopy DLTS deep level optical spectroscopy DLOS PAMBE MOCVD Radiation
27	Investigation of electrically-active defects in AlGaN/GaN high electron mobility transistors by spatially-resolved spectroscopic scanned probe techniques. Cardwell, Drew 16 September 2013 (has links) No description available. Solid State Physics Electrical Engineering
28	Deep level defects study of arsenic implanted ZnO single crystal Zhu, Congyong., 朱從佣. January 2008 (has links) published_or_final_version / Physics / Master / Master of Philosophy Zinc oxide. Arsenic. Doped semiconductors. Semiconductors - Defects. Deep level transient spectroscopy.
29	Development of optimized deconvoluted coincidence doppler broadening spectroscopy and deep level transient spectroscopies with applicationsto various semiconductor materials Zhang, Jingdong., 張敬東. January 2006 (has links) published_or_final_version / abstract / Physics / Doctoral / Doctor of Philosophy Deep level transient spectroscopy. Positron annihilation. Spectrum analysis - Deconvolution. Semiconductors - Materials.
30	Fourier deep level transient spectroscopy and its application to gold in silicon Divekar, Prasad K. 03 July 2002 (has links) A primarily software based Fourier Deep Level Transient Spectroscope (FDLTS) is built. The raw capacitance transient is acquired and digitized using capacitance meter HP4280A whereas the signal analysis is done using a customized software module. The software module calculates both the conventional DLTS spectrum and the Fourier DLTS spectrum. This home-made FDLTS set up was compared to a commercial conventional box-car DLTS system (Sula Technology's DLTS) as well as to a commercial Fourier DLTS system (Bio-rad) and it was found to be either equivalent to the commercial systems or even better in some respects. In one case, Fourier analysis using the home-made setup, led to the detection of a trap completely undetected by the commercial conventional DLTS. The FDLTS system together with the commercial conventional DLTS were used to study possible gold contamination in an industrial process. The study was accomplished by comparing conventional and Fourier DLTS spectra and corresponding calculated trap properties using Schottky barrier diodes fabricated on the suspect wafers and an intentionally gold diffused reference sample wafer. During the investigation minority carrier emission in DLTS using Schottky barrier diodes was observed. The study revealed the presence of some possible gold-like contamination which trapped minority carriers (i.e. electrons) in p type silicon. / Graduation date: 2003 Deep level transient spectroscopy Diodes, Semiconductor -- Evaluation Semiconductors -- Impurity distribution Gold -- Spectra

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