Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / In this work, we have measured the domain wall velocity in the low field regime and studied the domain wall dynamics in Joule-annealed amorphous glass-covered microwires with positive magnetostriction. Such microwires are known to present magnetic bi-stability when axially magnetized. In order to measure of the single domain wall dynamics under different conditions, an electrical current was applied to the wire simultaneously to the mechanical stress and driving magnetic field. We have observed that the applied stress decreases the domain wall mobility. When the dc current is applied to the sample, an increase or a decrease is observed on the axial domain wall mobility, depending on the current direction. When we have treated the orthogonal motion of the domain wall, the current influence is not detected. On the other hand, it was verified a modification on the domain wall length. It was also observed a change in the domain wall shape from conical to parabolic one. These results are explained in terms of the change in the magnetic energy promoted by the additional Oersted field which, by its time, modifies the length and shape of the conical domain wall, in such a way that the orthogonal domain wall velocity is not changed by the applied current. / Nesse trabalho, foi medida a velocidade de paredes de domínios em regime de baixos campos e estudada a dinâmica dessas paredes em microfios amorfos recobertos por vidros com magnetostricção positiva tratados via efeito Joule. Tais microfios são conhecidos por apresentar biestabilidade magnética quando axialmente magnetizados. A fim avaliar a dinâmica de uma única parede de domínio sob diferentes condições, corrente elétrica DC foi aplicada simultaneamente a tensões mecânicas e campo magnético externo. Foi verificado que quando uma tensão mecânica externa é aplicada, a mobilidade da parede de domínio diminui. Já quando a corrente foi aplicada na amostra, um aumento ou decréscimo da mobilidade axial da parede foi observado, dependendo do sentido da corrente aplicada. Quando foi tratado da velocidade ortogonal da parede de domínio, não foi observada influência da corrente. Por outro lado, foi verificado uma modificação no comprimento da parede de domínios. Além disto, foi observado uma mudança na forma da parede de domínio, passando de um formato cônico para parabólico. Os resultados são explicados em termos da mudança na energia magnética promovida pelo campo de Oersted, gerado pela corrente aplicada, que por sua vez modifica o comprimento e a forma da parede de domínio sem que a velocidade ortogonal da parede de domínio seja alterada pela corrente aplicada.

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / Barkhausen noise (BN) corresponds to the voltage pulses induced in a sensing coil wound around a ferromagnetic material submitted to a variable magnetic field. It is related to the irregular motion of the domain walls (DWs) in a disordered magnetic material. Due to its stochastic character, most of the studies aim to explain the BN statistical properties. The statistical functions are, in general, well described by a power-law behavior with cutoff, whose exponents and cutoffs can be compared with the predictions obtained with theoretical models. Interestingly, statistical properties seem to be independent of microscopic and macroscopic details but controlled by a few general properties, as the system dimensionality and range of the relevant interactions governing the DWs dynamics. For bulk materials, there is a well established and consistent interpretation for the BN statistical properties, including the distributions of jump sizes and durations, average size vs. duration and power spectrum, which are related to the exponents t, a, 1=(snz) and J, respectively. In this case, the results clearly indicate that bulk samples present an essentially three-dimensional magnetic behavior and the exponents can be grouped in two distinct universality classes, according the range of interactions governing the DWs dynamics. For ferromagnetic films, the statistical properties are not so well studied due to experimental and theoretical difficulties and most of the experimental results reported so far make use of magneto-optical techniques, which restrict the analysis to the distributions of sizes. In all cases, the reported exponents for films are smaller than that obtained for bulk samples, indicating a possible two-dimensional magnetic behavior. Due to the insufficient amount of experimental data, the structural character and film thickness influence on the exponents was not observed and a complete comprehension of the DWs dynamics in films is still lacking. In this work, we report BN experimental results obtained with the classical inductive method in policrystalline and amorphous ferromagnetic films with thickness in the range 10 - 1000 nm. We investigate the BN statistical properties in order to understand the effects of the interplay between the system dimensionality and the range of the relevant interactions governing the DWs and magnetization dynamics. In particular, we perform an extended statistical analysis which includes the distributions of jump sizes and durations, average size vs. duration curve, power spectrum and the average shape of the Barkhausen jump, reported for the first time for films. The results show evidence of a three to two-dimensional crossover in the DWs dynamics as the film thickness is decreased. Also, the effect of the range of interactions governing the DWs dynamics in this range of thickness is observed, indicating the same two distinct universality classes observed for bulk materials. Through these results, we provide experimental evidence to the validity of different three and two-dimensional heoretical models for DWs dynamics. / O ruído Barkhausen (BN) corresponde aos pulsos de tensão detectados por uma bobina sensora enrolada em torno de um material ferromagnético, quando submetido a um campo magnético variável. O ruído é produzido por mudanças súbitas da magnetização, principalmente devido ao movimento irregular das paredes de domínio (DWs) em um meio magnético desordenado. Devido ao seu caráter estocástico, grande parte dos estudos visa explicar as propriedades estatísticas do ruído. As funções estatísticas são, em geral, bem descritas por leis de potência com cutoff , cujos expoentes e valores de cutoff podem ser comparados com valores obtidos teoricamente. Como ponto interessante, as propriedades estatísticas parecem ser independentes dos detalhes microscópicos e macroscópicos, sendo dependentes de apenas algumas propriedades gerais, como a dimensionalidade do sistema e o alcance das interações que governam a dinâmica de DWs. Para materiais bulk , há uma interpretação robusta e bem estabelecida para as propriedades estatísticas do ruído, incluindo as distribuições de área e duração dos saltos, área média do salto vs. duração e espectro de potência, que estão relacionados com os expoentes t, a, 1=(snz) e J, respectivamente. Neste caso, os resultados claramente indicam que amostras bulk apresentam um comportamento magnético essencialmente tri-dimensional e que os expoentes podem ser agrupados em duas classes de universalidade distintas, de acordo com o alcance das interações que governam a dinâmica de DWs. Para filmes ferromagnéticos, as propriedades estatísticas não são tão bem estudadas devido a dificuldades teóricas e experimentais e devido ao fato de que a maioria dos resultados experimentais publicados até o momento, obtidos através de técnicas magneto-ópticas, restringem a análise apenas à distribuição de área dos saltos. Em todos os casos, os expoentes obtidos para filmes são menores do que os obtidos para amostras bulk , indicando um possível comportamento magnético bi-dimensional. No entanto, devido à insuficiente quantidade de dados experimentais, a influência da espessura do filme e do caráter estrutural sobre os expoentes ainda não foi observada e uma compreensão completa da dinâmica de DWs em filmes ainda não foi obtida. Neste trabalho, são apresentados resultados experimentais de BN obtidos, através do tradicional método indutivo, em filmes ferromagnéticos policristalinos e amorfos, com espessuras no intervalo de 10 - 1000 nm. Neste caso, as propriedades estatísticas do ruído são investigadas com o objetivo de compreender os efeitos da dimensionalidade do sistema e do alcance das interações sobre os expoentes e sobre a dinâmica de DWs em filmes. Em particular, foi realizada uma vasta e sistemática análise estatística, envolvendo distribuições de amplitude, área e duração dos saltos, área média do salto vs. duração, espectro de potência e a forma média do salto Barkhausen, pela primeira vez obtida para filmes. Os resultados mostram evidências experimentais de um crossover dimensional da dinâmica de DWs à medida que a espessura do filmes é reduzida. Também, o efeito do alcance das interações sobre a dinâmica de DWs em filmes é observado, indicando a existência das mesmas duas classes de universalidade observadas para materiais bulk . Deste modo, os expoentes medidos fornecem evidências experimentais para a validade de diferentes modelos tri e bi-dimensionais para a dinâmica de DWs.

Cette thèse est consacrée aux recherches des propriétés statiques et dynamiques des parois de domaines magnétiques (DW pour Domain Wall) dans les nanofils CoFeB. Un système de mesure basé sur un microscope Kerr à haute résolution a été mis en place et utilisé pour ces recherches.Tout d'abord, les phénomènes liés à la tension interfaciale des parois ont été étudiés. La contraction spontanée des bulles de domaine a été observée directement en utilisant le microscope Kerr. Ce phénomène a été expliqué en utilisant le concept de la pression de Laplace due à l'énergie interfaciale des parois. L'énergie interfaciale des parois a été quantifiée en mesurant le champ externe nécessaire pour stabiliser ces bulles. Le mécanisme de la piégeage et de la dépiégeage des parois dans certaines géométries artificielles, comme la croix de Hall ou l'entrée reliant un carré de nucléation et un fil, a été expliqué en utilisant le concept de tension interfaciale des parois et a été utilisé pour extraire l'énergie interfaciale des parois. Bénéficiant de ces études, une méthode permettant de quantifier directement le coefficient des Interactions de Dzyaloshinskii- Moriya (DMI pour Dzyaloshinskii- Moriya Interaction) à l'aide du microscope Kerr a été proposée. En outre, un nouveau type de capteur magnétique basé sur l'expansion réversible de paroi en raison de la tension interfaciale a été proposé et vérifié en utilisant des simulations micromagnétiques.Deuxièmement, les propriétés dynamiques des parois dans le film et les fils Ta / CoFeB / MgO ont été étudiées. La vitesse du propagation des parois induite par le champ magnétique ou par l'effet combiné des impulsions de champ magnétique synchronisées et des impulsions de courant électrique a été mesurée. En régime précessionne, la vitesse du mouvement DW induite par l'effet combiné du champ et du courant est égale à la superposition des vitesses entraînées par le champ ou le courant indépendamment. Ce résultat nous a permis d'extraire la polarisation de spin de CoFeB dans cette structure. Les effets de piégeage du mouvement des parois dans les fils étroits ont été étudiés. Des champs de dépiégeage associés aux gros défauts pour le mouvement des parois induit par champ dans les nanofils a été mesurée. Il a été constaté que les effets de piégeage deviennent plus sévères lorsque la largeur w des fils diminue. Une relation linéaire entre le champ de piégeage et 1/w a été trouvée. L'origine de ces sites d'ancrage durs ainsi que leurs influences sur la vitesse de mouvement des parois ont été discutées. En outre, il a été constaté que l'effet d'épinglage était amélioré lorsque le courant était appliqué, quelle que soit la direction relative entre le mouvement des parois et le courant. Cet accroissement pourrait être expliqué par l'effet du courant de Hall de spin de la sous-couche (Ta). Bien qu'il n'y ait pas eu de DMI ou de champ planaire, le courant de Hall de spin, polarisé dans la direction transversale, peut exercer un couple sur la parois de type de Bloch, une fois que la paroi s'éloigne de la direction transversale.Enfin, un dispositif mémoire de circuit en forme d'anneau basée sur le travail combiné de STT et SOT a été proposée. Comparée à la mémoire de piste traditionnelle en forme de ligne, cette mémoire en forme d'anneau permet au paroi de demaine de se déplacer dans un nanofil en forme d'anneau sans être éjecté, évitant ainsi la perte des informations associées. Le travail de conception et d'optimisation a été réalisé avec des simulations micromagnétiques. / This thesis is dedicated to the research of the static and dynamic properties of magnetic Domain Walls (DWs) in CoFeB nanowires. A measurement system based on a high-resolution Kerr microscope was implemented and used for these research.First, phenomena related to the DW surface tension was studied. A spontaneous collapse of domain bubbles was directly observed using the Kerr microscope. This phenomenon was explained using the concept of the Laplace pressure due to the DW surface energy. The surface energy of DW was quantified by measuring the external field required to stabilize these bubbles. The DW pinning and depinning mechanism in some artificial geometries, such as the Hall cross or the entrance connecting a nucleation pad and a wire, was explained using the concept of DW surface tension and was used to extract the DW surface energy. Benefited from these studies, a method to directly quantify the coefficient of Dzyaloshinskii- Moriya Interactions (DMI) using Kerr microscope has been proposed. In addition, a new type of magnetic sensor based on the revisable expansion of DW due to DW surface tension was proposed and verified using micromagnetic simulations.Second, the dynamic properties of DWs in Ta/CoFeB/MgO film and wires were studied. The velocity of DW motion induced by magnetic fields or by the combined effect of synchronized magnetic field pulses and electrical current pulses was measured. In steady flow regime, the velocity of DW motion induced by the combined effect of the field and the current equals to the superposition of the velocities driven by field or current independently. This result allowed us to extract the spin-polarization of CoFeB in this structure. Pinning effects of DW motion in narrow wires was studied. Depinning fields of hard pinning sites for the field-driven DW motion in nanowires was measured. It was found that the pinning effects become severer as the width w of the wires scaled down. A linear relationship between the depinning field and w was found. The origin of these hard pinning sites, as well as their influences on the DW motion velocity, was discussed. Furthermore, it was found that the pinning effect was enhanced when a current was applied, no matter the relative direction between the DW motion and the current. We propose a possible explanation, which would be an effect of the spin Hall current from the sublayer (Ta). Although there was no DMI or in-plane field, the spin Hall current, which was polarized in the transverse direction, can still exert a torque on the Bloch DW, once the DW tilts away from the transverse direction.At last, a ring-shaped racetrack memory based on the combined work of STT and has been proposed. Compared with the traditional line-shaped racetrack memory, this ring-shaped memory allows the DW moving in a ring-shaped nanowire and the data dropout problem can be avoided. The design and optimization work was performed with micromagnetic simulations.

.La jonction magnétique à effet tunnel, noyau de la mémoire MRAM (magnetic random access memory), a suscité beaucoup d'intérêt pour les technologies de stockage et de traitement de l'information de faible puissance. Cette thèse se concentre sur l'influence de l'effet de bord pour les propriétés magnétiques des nanodispositifs. Deux nanostructures magnétiques typiques sont concernés: nanopiliers MTJ sous un processus spécial d'encapsulation, et nanodots magnétiques avec la même structure que la couche libre de pilier MTJ.Tout d'abord, nous développons le processus de fabrication complet pour nanopiliers MTJ et nanodots magnétiques, qui est compatible avec la technologie standard du CMOS.Ensuite, un nouveau dispositif memristive hétérogène composé de nanopiliers MTJ entourés de commutateurs résistifs en silicium est étudié par la mesure de transport et la caractérisation structurale. Son application potentielle en tant que dispositif de mémoire à logique avec fonction de cryptage de la mémoire est discutée.Enfin, les nanodots magnétiques avec anisotropie magnétique perpendiculaire (Perpendicular Magnetic Anistopy, PMA) est étudiés par le microscope Kerr. Un modèle physique de la pression de Laplace appliqué sur un mouvement de DW aux bords des nanodots est chargé d'expliquer le décalage inattendu de la distribution du champ de commutation (switching field distribution, SFD) pour des nanodots de tailles variées / Magnetic tunnel junction (MTJ), the core of the magnetic random access memory (MRAM), have attracted intensive interest for low-power storage and information processing technologies. This thesis focuses on the discussion of the influence of edge effect for the magnetic proprieties of nanodevices. Two typical magnetic nanostructures are involved: MTJ nanopillar under a special encapsulation process, and magnetic nanodots with the same structure as the free layer of MTJ stack.First, we develop the full fabrication process for both MTJ nanopillar and magnetic nanodots, which is compatible with standard CMOS technology.Then, a novel heterogeneous memristive device composed of an MTJ nanopillars surrounded by resistive silicon switches is investigated by transport measurement and structural characterization. The potential application as a logic-in-memory device with memory encryption function is discussed.Finally, the magnetic nanodots with perpendicular magnetic anisotropy (PMA) is investigated using Kerr microscope. A physical model of Laplace pressure applied on a DW motion at the edges of nanodots is responsible for explaining the unexpected shifting of switching field distribution (SFD) for nanodots with varied sizes.

Depuis la première observation de désaimantation ultra-rapide dans des films de Ni soumis à une excitation laser pulsée, on a assisté à un grand intérêt de comprendre l'interaction entre les impulsions laser ultra-courtes et l'aimantation. Ces études ont conduit à la découverte de la commutation toute optique de l'aimantation dans un alliage de film ferrimagnétique en utilisant des impulsions laser femtosecondes. La commutation toute optique permet un renversement de l’aimantation d’un matériau magnétique sans champ magnétique externe. La direction de l'aimantation résultante est donnée par la polarisation circulaire droite ou gauche de la lumière. La manipulation de l'aimantation par un faisceau laser a longtemps été limité à un seul type de matériau, mais ce mécanisme s'est avéré être un phénomène plus général qui s’applique à une grande variété de matériaux ferromagnétiques, y compris des alliages, des empilements et des hétérostructures, ainsi que des hétérostructures ferrimagnétiques synthétiques de terres-rares. Récemment, nous avons observé le même phénomène dans des films ferromagnétiques simples, ouvrant ainsi la voie à une intégration de l'écriture toute optique dans les dispositifs spintroniques. De plus, dans des matériaux de type [Co/Pt] ou [Co/Ni] avec une polarisation de spin élevée et une anisotropie magnétique perpendiculaire contrôlable, un mouvement de parois de domaines induit par un courant polarisé peut être observé dans des pistes magnétiques (couple spin-orbite ou couple de transfert de spin), ce qui présente un grand intérêt pour des applications spintroniques basse consommation et de densité élevée, telles que le concept de mémoire racetrack et la logique magnétique. Cependant, la densité de courant requise pour le mouvement des parois de domaines est encore trop élevée pour permettre la réalisation de dispositifs à faible puissance. Dans ce contexte innovant, la recherche effectuée dans le cadre de ma thèse s’est concentrée sur la manipulation de parois de domaines dans les pistes fabriquées à partir de films minces à forte anisotropie magnétique perpendiculaire en combinant à la fois les effets du courant polarisé et ceux de la commutation toute optique. Différents films minces ont été explorés afin d'étudier les effets combinés optiques dépendant de l'hélicité et des couples spin-orbite ou de transfert de spin sur le mouvement des parois de domaines. Nous avons montré que les parois de domaine peuvent rester piégées sous une hélicité circulaire du laser et dépiégées par une hélicité circulaire opposée, et la densité de courant polarisé seuil peut être considérablement réduite en utilisant un laser femtoseconde. Nos résultats sont prometteurs pour le développement de nouveaux dispositifs photoniques-spintroniques de faible puissance. / Since the first observation of ultrafast demagnetization in Ni films arising from a pulsed laser excitation, there has been a strong interest in understanding the interaction between ultrashort laser pulses and magnetization. These studies have led to the discovery of all-optical switching (AOS) of magnetization in a ferrimagnetic film alloy of GdFeCo using femtosecond laser pulses. All-optical switching enables an energy-efficient magnetization reversal of the magnetic material with no external magnetic field, where the direction of the resulting magnetization is given by the right or left circular polarization of the light. The manipulation of magnetization through laser beam has long been restricted to one material, though it turned out to be a more general phenomenon for a variety of ferromagnetic materials, including alloys, multilayers and heterostructures, as well as rare earth free synthetic ferrimagnetic heterostructures. Recently, we have observed the same phenomenon in single ferromagnetic films, thus paving the way for an integration of all-optical writing in spintronic devices. Moreover, in similar materials, like [Co/Pt] or [Co/Ni] with high spin polarization and tunable perpendicular magnetic anisotropy (PMA), efficient current-induced domain wall (DW) motion can be observed in magnetic wires, where spin-orbit torque (SOT) or spin transfer torque (STT) provides a powerful means of manipulating domain walls, which is of great interest for several spintronic applications, such as high-density racetrack memory and magnetic domain wall logic. However, the current density required for domain wall motion is still too high to realize low power devices. This is within this very innovative context that my Ph.D. research has focused on domain wall manipulation in magnetic wires made out of thin film with strong perpendicular magnetic anisotropy combining both spin-polarized current and all-optical switching. Different material structures have been explored, in order to investigate the combined effects of helicity-dependent optical effect and spin-orbit torque or spin transfer torque on domain wall motion in magnetic wires based on these structures. We show that domain wall can remain pinned under one laser circular helicity while depinned by the opposite circular helicity, and the threshold current density can be greatly reduced by using femtosecond laser pulses. Our findings provide novel insights towards the development of low power spintronic-photonic devices.

Dans cette thèse, nous rapportons l'évolution temporelle du premier et du troisième ordre de la diffusion magnétique d'un film CoTb amorphe après une excitation femtoseconde. Ces résultats sont obtenus en appliquant une diffusion résonnants de rayons X aux petits angles au seuil d'absorption magnétique de Co M3 via des expériences de pompe sonde répétitives. Une différence de comportement entre le premier et le troisième ordre de diffusion a été observée après 3,5 ps, où une seconde baisse de l'intensité du troisième ordre apparaît. En utilisant des modèles appropriés, nous montrons que cette différence est due à une augmentation de la largeur de la paroi du domaine séparant deux domaines opposés. Nous supposons que cet élargissement de la paroi est généré par une variation de l'anisotropie uniaxiale hors plan due au réchauffement thermique du réseau par l'impulsion laser femtoseconde. Cette interprétation est vérifiée en mesurant l’anisotropie uniaxiale en fonction de la température de chauffage en effectuant des mesures statiques SQUID-VSM. / In this thesis, we report the time evolution of first and third order of magnetic scattering from an amorphous CoTb film after a femtosecond excitation. These results are obtained by applying a resonant small angle X ray scattering at the Co magnetic absorption edge M3 via a repetitive pump probe experiments. Difference in behaviours between the first and third scattering orders was observed after 3.5 ps where a second drop of the third order intensity appears. Using suitable models, we show that this difference is due to an increase of the domain wall width separating two opposite domains. We suppose that this wall broadening is generated by the variation of the out of plane uniaxial anisotropy due to the thermal heating of the lattice by the femtosecond laser pulse. This interpretation is verified by following the uniaxial anisotropy as function of the heating temperature by doing static SQUID-VSM measurements

Les mémoires MRAM (Magnetic Random Access Memory) sont l’une des technologies émergentes visant à devenir un dispositif de mémoire «universelle» applicable à une grande variété d’applications. La combinaison du couple de spin-orbite (SOT) résultant de l’effet Hall de spin (SHE) et de l’interaction de Dzyaloshinskii – Moriya (DMI) aux interfaces entre un métal lourd et une couche ferromagnétique s’est révélée être un mécanisme efficace pour induire une propagation de parois magnétiques chirales à des faibles densité de courant. Les dispositifs à parois magnétiques devraient constituer la prochaine génération de supports d’information en raison de leur potentiel pour des densités de stockage très élevées. Cependant, une limitation cruciale est la présence de défauts structuraux qui piègent les parois magnétiques et induisent des courants de seuil élevés ainsi que des effets stochastiques importants. L’origine du piégeage résulte de la présence de défauts structuraux aux interfaces entre la couche magnétique ultra-mince et les autres couches (isolants et/ou métaux lourds) qui induisent une distribution spatiale des propriétés magnétiques comme l’anisotropie magnétique perpendiculaire (PMA) ou le DMI. Comprendre l’influence de la structure des interfaces sur la propagation de parois et sur le DMI en particulier est cruciale pour la conception de futurs dispositifs basse consommation. C’est dans ce contexte très novateur que mon doctorat s’est focalisé sur la manipulation de la structure des interfaces dans des couches ultra-minces à anisotropie magnétique perpendiculaire. Des structures de CoFeB-MgO ont été utilisées afin de mieux comprendre l'impact de la structure des interfaces sur l’anisotropie, le DMI, la propagation de parois et les phénomènes de SOT. L’approche innovante que nous avons utilisée est basée sur l’irradiation par des ions légers pour contrôler le degré de mélange aux interfaces. Sous l’effet du mélange induit par l’irradiation, nous avons observé dans des structures de W-CoFeB-MgO une forte augmentation de la vitesse de parois dans le régime de creep, compatible avec une réduction de la densité des centres de piégeage. Nous avons aussi démontré que l'anisotropie de l'interface Ki et le DMI mesuré par propagation asymétrique de parois se comportent de la même façon en fonction du mélange aux interfaces. Finalement, nous avons fabriqué des barres de Hall afin de mesurer la commutation de l’aimantation induite par SOT. Le centre des croix de Hall a été irradié afin de diminuer localement l’anisotropie. Nous avons observé une réduction de 60% de la densité de courant critique après l’irradiation correspondant au retournement des croix de Hall irradiés par propagation de parois. Notre étude fournit de nouvelles pistes concernant le développement de mémoires magnétiques à faible consommation, de dispositifs logiques et neuromorphiques. / Magnetic Random Access Memory (MRAM), as one of the emerging technologies, aims to be a “universal” memory device for a wide variety of applications. The combination of the spin orbit torque (SOT) resulting from the spin Hall effect (SHE) and the Dzyaloshinskii–Moriya interaction (DMI) at interfaces between heavy metals and ferromagnetic layers has been demonstrated to be a powerful mean to drive efficiently domain-wall (DW) motion, which are expected to be the promising next generation of information carriers owing to ultra-low driving currents and ultra fast DW motion. However, the crucial limitation of SOT induced domain wall motion results from the presence of pinning defects that can induce large threshold currents and stochastic behaviors. Such pinning defects are strongly related to structural inhomogeneities at the interfaces between the ultra-thin ferromagnetic layer and the other materials (insulator and/or heavy metals) that induce a spatial distribution of magnetic properties such as perpendicular magnetic anisotropy (PMA) or DMI. Therefore, understanding the role of the interface structure on DW motion and DMI is crucial for the design of future low power devices.It is under this innovative context that my Ph.D. research has focused on the manipulation of interface structure in ultra-thin magnetic films with perpendicular magnetic anisotropy. CoFeB-MgO structures have been used in order to understand the impact of interface structure on anisotropy, DMI, domain wall motion and SOT phenomena. The innovative approach we have used in this PhD research is based on light ion irradiation to control the degree of intermixing at interfaces. In W-CoFeB-MgO structures with high DMI, we have observed a large increase of the DW velocity in the creep regime upon He⁺ irradiation, which is attributed to the reduction of pinning centres induced by interface intermixing. Asymmetric in-plane field-driven domain expansion experiments show that the DMI value is slightly reduced upon irradiation, and a direct relationship between DMI and interface anisotropy is demonstrated. Using local irradiated Hall bars in SOT devices, we further demonstrate that the current density for SOT induced magnetization switching through DW motion can be significantly reduced by irradiation. Our finding provides novel insights into the development of low power spintronic-memory, logic as well as neuromorphic devices.

Applying ferroelectric materials for nanoelectronic circuits opens, next to exploiting completely new functionalities, the possibility of improving resource efficiency in electronic circuits. Due to its defined and easy-to-manipulate domain structure, lithium niobate (LiNbO3, LNO) is a promising candidate to realize such circuits. As a prerequisite, a detailed understanding of the underlying conduction mechanisms is required for a future large scale application. The main field of attention of this thesis is the domain wall conductivity in lithium niobate, investigated with temperature-dependent dc conductivity measurements as well as higher-harmonic current analysis under alternating-voltage excitation. Thereby the parameters of the electric field are of special interest, comprising the static dc field and both the amplitude and the frequency of the ac excitation voltage. Prior to the analysis of the experimental results, the setups are characterized in depth and a theoretical framework to calculate higher-harmonic current contributions generated by non-ohmic conduction models is derived. In case of high static offset voltages, an ohmic-like conductance is observed, which is ascribed to the intrinsic conductivity of the domain wall. For lower static offset fields, a diode-like current-voltage characteristic is found, originating from the junction of the domain wall and the metallic contact electrode. The results are compared to measurements at an industrial Schottky diode taken under the same conditions. Based on the theory of metal-semiconductor junctions, the effective donor density within the conducting domain wall is estimated to be of the order of 1019/cm3, which agrees well with theoretical calculations in the literature. An equivalent circuit based on two diodes and two resistors is proposed to model the observed nonohmic conductance. For all experimental techniques, a good agreement between this model and the experimental data is observed, proving especially the non-ohmic conductivity to be of Schottky-type.

Para o desenvolvimento da nanociência atual há forte demanda por equipamentos capazes de caracterizar sistemas em escalas da ordem nanométrica. Este contexto impulsionou o desenvolvimento de microscópios ópticos de varredura em campopróximo (Scanning Near-field Optical Microscope SNOM). Diferentemente da microscopia óptica tradicional, os SNOMs detectam a radiação eletromagnética evanescente e, conseqüentemente, a resolução não é limitada pelo critério de Rayleigh. No Laboratório de Materiais Magnéticos IFUSP desenvolvemos um SNOM sensível a efeitos Kerr magnetoópticos (MO-SNOM). Dessa maneira, associamos a alta resolução da técnica à alta sensibilidade dos efeitos magnetoópticos. Trata-se se uma área relativamente pouco explorada e carente de resultados sistemáticos na literatura. Utilizando o MO-SNOM, caracterizamos partículas microestruturadas de Co70.4Fe4.6Si15B10 amorfo com dimensões de 16x16x0.08 microm3 e 4x4x0.08 microm3. Os resultados compreendem dezenas de imagens de susceptibilidade magnetoóptica diferencial com resolução melhor que 200 nm e curvas de histerese local. Em primeira análise, a demonstração de resultados sistemáticos ajuda a estabelecer a técnica. O comportamento magnético das partículas, estudadas sob várias condições de campo aplicado, se mostrou determinado basicamente pela anisotropia de forma. As curvas de histerese local mostraram comportamentos intrinsecamente locais e motivaram uma interessante discussão sobre os parâmetros de caracterização magnética convencionais. As medidas realizadas indicam que o efeito Kerr magnetoótico transversal em campopróximo é similar ao campo-distante. Os resultados são fortemente sustentados por medidas de microscopia magnetoóptica de campo-distante, simulações micromagnéticas e medidas de microscopia de força magnética. Medidas complementares revelam o potencial do MO-SNOM para caracterizações de objetos extensos quanto a potenciais de pinning. Além disso, medidas em filmes finos de NiFe/FeMn acoplados por exchange-bias evidenciam a alta sensibilidade do MO-SNOM, estimada de DM ~ 2 x 10-12 emu. / To support nanosciences evolution, there is a strong demand for developing new instrumentation devoted to nano-scale characterization. In this context, the development of the Scanning Near-field Optical Microscope (SNOM) took place. In contrast to traditional optical microscopes, SNOM deals with evanescent electromagnetic radiation and, consequently, the resolution is no longer limited by the Rayleigh criterion. At Laboratório de Materiais Magnéticos (LMM) IFUSP a SNOM devoted to magneto-optical Kerr effect measurements (MO-SNOM) has been developed. The MOSNOM associates the high resolution of the near-field technique to the high sensibility of the magneto-optical Kerr effect. Near-field magneto-optical microscopy is not yet wellestablished and there is a lack of systematic results in the literature. Using the MO-SNOM, amorphous Co70.4Fe4.6Si15B10 particles with 16x16x0.08 microm3 and 4x4x0.08 microm3 dimensions were studied. With resolution better than 200 nm, several magneto-optical differential susceptibility images and local hysteresis loops were obtained. The systematic results uphold the establishment of this new technique. Under the different applied field conditions, the magnetic behavior of the particles was found to be determined by shape anisotropy. Local hysteresis loops presented shapes intrinsic of local field induced process. The unusual hystesesis loops motivated interesting discussion about the conventional magnetic parameters. The MO-SNOM measurements indicate that the near-field transverse magneto-optical Kerr effect is similar to the far-field case. The results are highly supported by far-field magneto-optical microscopy, micromagnetic simulations and magnetic force microscopy measurements. Complementary measurements indicate the MO-SNOM potential to extensive magnetic surface characterization related to pinning potential distribution. Furthermore, measurements on the exchange-bias coupled NiFe/FeMn thin films make evident the MO-SNOM high sensitivity, estimated to be DeltaM ~ 2 x 10-12 emu.

Dans le domaine du stockage de l'information, la miniaturisation de l'unité magnétique portant l'information est un enjeu capital. Ainsi, la découverte de molécules possédant des propriétés de relaxation lente de leur aimantation, comparables à celles des aimants classiques, constitue une avancée majeure suscitant l'espoir de pouvoir un jour stocker l'information à l'échelle moléculaire.Cette thèse a pour but d'étudier les propriétés magnétiques des chaînes aimants. Ces chaînes sont constituées d'unités magnétiques liées par des interactions magnétiques au sein d'un réseau unidimensionnel. Au delà de leurs potentielles applications, les chaînes aimants sont parfaitement adaptées à l'étude fondamentale des chaînes de spins. Le premier chapitre de ce manuscrit constitue un rappel des propriétés statiques et dynamiques des chaînes aimants connues à ce jour. Le deuxième chapitre décrit les propriétés statiques des parois séparant les différents domaines d'aimantation dans des chaînes de spins de topologies magnétiques variées. Le troisième chapitre de ce manuscrit décrit les propriétés dynamiques des chaînes de spins d'Ising. Bien que seul le modèle de Glauber soit utilisé dans la littérature associée aux chaînes aimants, il existe une infinité de modèles dynamiques d'Ising.Grâce à l'étude détaillée de trois modèles, il est montré dans ce chapitre que l'application d'un champ magnétique permet de révéler différentes dynamiques de relaxation de l'aimantation pour chacun des modèles considérés. Ces résultats permettent enfin de proposer deux protocoles expérimentaux à même de déterminer le modèle dynamique le plus adapté à l'étude des chaînes aimants. / The size reduction of magnetic units able to store information is an important issue for the design of high-density data storage devices. The discovery of molecules that show slow relaxation of their magnetization, similar to classical magnets, is a great breakthrough in terms of molecular scale information storage. The work presented in this thesis is devoted to the study of the magnetic properties of Single Chain Magnets. Single Chain Magnets can be viewed as a one-dimensional assembly of anisotropic magnetic units linked by magnetic interactions. Beyond their potential applications, Single Chain Magnets are interesting prototypes for the fundamental study of spin chains. The first chapter of this manuscript summarizes some known static and dynamic properties of Single Chain Magnets. Chapter II is devoted to the static properties of domain walls, which link the magnetic domains in spin chains, considering various magnetic topologies. Chapter III is dedicated to the dynamic properties of Ising spin chains. In the Single Chain Magnet literature, the Glauber model is used to describe the dynamic properties of such spin chains. However, there exists an infinite number of dynamic Ising models. In this chapter, three dynamic models are studied in detail. We show that the presence of a magnetic field allows us to discern different magnetization relaxation behaviors associated with each dynamic model. These results allow us to establish two experimental protocols in order to determine the most suitable dynamic model to describe the properties of Single Chain Magnets.