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Low Power Merged LNA and Mixer Design for Medical Implant Communication ServicesJeong, Jihoon 02 April 2012 (has links)
The FCC allocated the spectrum of 402-405 MHz for MICS (Medical Implant Communication Services) applications in 1999. The regulations for MICS band apply to devices that support the diagnostic and/or therapeutic functions associated with implanted medical electronics. The implanted devices aid organs and control body functions of patients to support specific treatments, and monitor patients continuously so that necessary action can be taken in advance to avoid serious conditions. To enable to use MICS applications, several requirements must be satisfied. An implanted wireless device should have a small size, consume ultra-low power, and achieve the date rate of at least 200 kbps within 2 m distance. The major challenge is to realize ultra-low power devices. Thus the low-power design of the RF circuit is crucial for MICS applications as the power consumption of the wireless devices is mostly contributed by RF circuits.
This thesis investigates low-power design of an LNA and a down-conversion mixer of a receiver for MICS applications. The key idea is to stack an LNA and a mixer, while the LNA operates in the normal super-threshold region and the mixer in the sub-threshold region. In addition, a gm-boosting technique with a capacitor cross-coupled at the LNA input stage is also adopted to achieve a low noise figure (NF) and high linearity, which is critical to the overall performance of the receiver. The mixer operating in the sub-threshold region significantly reduces power dissipation and relaxes the voltage headroom without sacrificing the LNA performance. The relaxed voltage headroom enables stack of the LNA and the mixer with a low supply voltage of 1.2 V. The proposed circuit is designed in 0.18 μm RF CMOS technology. The merged LNA and mixer consumes only 1.83 mW, and achieves 21.6 dB power gain. The NF of the block is 3.55 dB at 1 MHz IF, and the IIP3 is -6.08 dBm. / Master of Science
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Harmonic rejection mixers for wideband receiversRafi, Aslamali Ahmed 31 October 2013 (has links)
This dissertation presents novel Harmonic Rejection (HR) Mixer architectures to obtain a high level of harmonic rejection. This is achieved by reducing the sensitivity to mismatches in devices operating at high frequencies. Consequently, the HR performance for this mixer architecture is primarily determined by resistor and capacitor matching at low intermediate frequencies (IF). Since large resistor areas can be used at relatively less power penalty in the low frequency IF section, superior HR performance is realized. A design fabricated in 110 nm CMOS process, rejects up to the fi rst 14 local oscillator (LO) harmonics and achieves 3rd, 5th and 7th HR ratios in excess of 52, 54 and 55 dB respectively, without any calibration or trimming. This mixer architecture also rejects flicker noise, has improved image rejection (IR) and second-order input-intercept-point (IIP2) performance. By using a clock N times the desired LO frequency, this scheme rejects the (N-1)th LO harmonic only by an amount of 20log(N-1) dB. A new technique is presented that enables better HR for the (N-1)th harmonic while preserving the level of rejection for other harmonics. This mixer fabricated in 55 nm standard CMOS process has a programmable number of 8, 10, 12 or 14 mixer phases and achieves an improvement of 29 dB for the (N-1)th harmonic while achieving 52 dB of rejection for the 3rd harmonic. It also rejects flicker noise and has an IIP2 performance of 68 dBm. The mixers presented in this dissertation set the state-of-the-art in HR performance for single-stage mixers with configurable number of phases without using any calibration or trimming. / text
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