To investigate quantum confinement effects on silicon (Si) light source electroluminescence (EL) properties like quantum efficiency, external power efficiency and spectral emission, thin Si finger junctions with nanometre-scale dimensions were designed and manufactured in a fully customized silicon-on-insulator (SOI) semiconductor production technology. Since commonly available photolithography is unusable to consistently define and align nanometre-scale line-widths accurately and electron-beam lithography (EBL) by itself is too time-expensive to expose complete wafers, the wafer manufacturing process employed a selective combination of photolithography and EBL. The SOI wafers were manufactured in the clean-rooms of both the Carl and Emily Fuchs Institute for Microelectronics (CEFIM) at the University of Pretoria (UP) and the Georgia Institute of Technology’s Microelectronic Research Centre (MiRC), which made a JEOL JBX-9300FS electron-beam pattern generator (EPG) available. As far as is known this was the first project in South Africa (and possibly at the MiRC) that employed EBL to define functional nanometre-scale semiconductor devices. Since no standard process recipe could be employed, the complete design and manufacturing process was based on self-obtained equipment characterization data and material properties. The manufacturing process was unprecedented in both the CEFIM and MiRC clean-rooms. The manufacture of nanometre-scale Si finger junctions not only approached the manufacturing limits of the employed processing machinery, but also had to overcome undesirable physical effects that in larger-scale semiconductor manufacture usually are negligible. The device design, mask layout and manufacturing process therefore had to incorporate various material, equipment limitation and physical phenomena like impurity redistribution occurring during the physical manufacturing process. Although the complicated manufacturing process allowed many unexpected problems to occur, it was expected that at least the simple junction breakdown devices be functional and capable of delivering data regarding quantum confinement effects. Although due to design and processing oversights only 29 out of 505 measured SOI light sources were useful light emitters, the design and manufacture of the SOI light sources was successful in the sense that enough SOI light sources were available to conduct useful optical characterization measurements. In spite of the fact that the functional light sources did not achieve the desired horizontal (width) confinement, measured optical spectra of certain devices indicate that vertical (thickness) confinement had been achieved. All spectrometer-measured thickness-confined SOI light sources displayed a pronounced optical power for 600 nm < λ < 1 μm. The SOI light source with the highest optical power output emitted about 8 times more optical power around λ = 850 nm than a 0.35 μm bulk-CMOS avalanche light-source operating at the same current. Possible explanations for this effect are given. It was shown that the buried oxide (BOX) layer in a SOI process could be used to reflect about 25 % of the light that would usually be lost to downward radiation back up, thereby increasing the external power efficiency of SOI light sources. This document elaborates on the technical objectives, approach, chip and process design, physical wafer manufacture, production process control and measurement of the nanometre-scale SOI light sources. Copyright / Dissertation (MEng)--University of Pretoria, 2010. / Electrical, Electronic and Computer Engineering / unrestricted

Phases organiques luminescentes qui sont incorporés dans une matrice inorganique conductrice est proposé dans cette étude pour la couche active d'une diode émettant de la lumière hybride. Dans ce composite, le colorant organique joue le rôle de site de recombinaison radiative de porteurs de charge qui sont injectées dans la matrice de transport ambipolaire inorganique. Comme l'un des combinaisons de matériaux de candidat, bicouche et des films minces composites de ZnSe et un complexe d'iridium rouge (Ir(BPA)) émetteur de lumière organique ont été préparé in situ par UHV technique d'évaporation thermique. Les alignements de bande d'énergie mesurée par spectroscopie de photoélectrons (PES) pour le ZnSe/Ir(BPA)et deux couches de ZnSe+Ir(BPA) révèlent que le composite HOMO et LUMO du colorant organique sont positionnées dans la largeur de bande interdite de ZnSe. Cette gamme offre les forces motrices énergiques nécessaires pour les transferts d'électrons et de trous de ZnSe à Ir(BPA). Par l'interprétation des données du PES,la composition chimique des interfaces ont également été déterminés. Le ZnSe/Ir(BPA) interface est réactive, même si elle est d'une pureté de matériaux de haute.Pendant ce temps, l'Ir (BPA)/ZnSe interface ne présente pas la pureté matériel. Ceci est représenté à la nature de ZnSe évaporation comme Zn particuliers et des fluxSE2, associée à des interactions chimiques avec le Ir(BPA) substrat. L'interface est,de ce fait, composé d'une multitude de phases, les phases de Se0, ZnSe rares, réduit Se et oxydé molécules de colorant, et de Zn qui sont intercalées atomes dans leIr(BPA) substrat. PES des composites ZnSe+Ir(BPA) révèle des tendances similaires à l'Ir(BPA)/ZnSe interface. A des émissions de lumière rouge surfaciques et intermittents fanées ont été observés à partir de dispositifs qui incorporent couches alternées séquences de ZnSe et Ir(BPA) pour la couche active. / Luminescent organic phases that are embedded in a conductive inorganicmatrix is proposed in this study for the active layer of a hybrid light-emitting diode. Inthis composite, the organic dye acts as the radiative recombination site for chargecarriers that are injected into the inorganic ambipolar transporting matrix. As one ofthe candidate material combinations, bilayer and composite thin films of ZnSe and ared iridium complex (Ir(BPA)) organic light emitter were prepared in situ via UHVthermal evaporation technique. The energy band alignments measured byphotoelectron spectroscopy (PES) for the ZnSe/Ir(BPA) bilayer and ZnSe+Ir(BPA)composite reveal that the HOMO and LUMO of the organic dye are positioned in theZnSe bandgap. This lineup provides the required energetic driving forces for electronand hole transfers from ZnSe to Ir(BPA). By interpreting PES data, the chemicalcomposition of the interfaces were also determined. The ZnSe/Ir(BPA) interface isreactive even though it is of high material purity. Meanwhile, the Ir(BPA)/ZnSeinterface does not exhibit material purity. This is accounted to the nature of ZnSeevaporation as individual Zn and Se2 fluxes, coupled with chemical interactions withthe Ir(BPA) substrate. The interface is, thereby, composed of an abundance of Se0phases, sparse ZnSe phases, reduced Se and oxidized dye molecules, and Znatoms that are intercalated into the Ir(BPA) substrate. PES of the ZnSe+Ir(BPA)composites reveals similar trends to the Ir(BPA)/ZnSe interface. A faded areal andintermittent red light emissions were observed from devices that incorporatedalternating layer sequences of ZnSe and Ir(BPA) for the active layer.

Cílem této práce je vývoj světelného zdroje založeného na technologii tlustostěnného elektroluminiscenčního panelu napájeného střídavým napětím (ACPEL). V současné době se jedná se o jedinou technologii založenou na metodách materiálového tisku vhodnou pro přípravu velkoplošných, flexibilních a vzorovaných zdrojů světla. Důraz je v této práci kladen na představení, prozkoumání a odstranění typických problémů, které jsou spojovány s touto technologií. Tyto problémy jsou omezený odstín barvy emitovaného světla a dlouhodobá stabilita elektroluminiscenčního prvku, který je vystaven vlivům prostředí. Rešeršní část dizertační práce je zaměřena na představení a identifikaci depozičních technik, vhodných pro reprodukovatelnou přípravu ACPEL panelů. Dalším cílem je identifikace fyzikálních parametrů, vhodných pro charakterizaci velkoplošných zdrojů světla. Praktickým cílem práce je nalezení vhodné metodologie pro popis a charakterizaci panelů, jakožto plošných světelných zdrojů. Fotometrická veličina jas L a spotřeba elektrické energie P byly vyhodnoceny jako vhodné parametry, určující aplikaci ACPEL panelů. Na modrém panelu bylo dosaženo maximální hodnoty jasu L = 133 cd•m2 při napětí Upp = 500 V a frekvenci f = 1000 Hz. Hodnoty spotřeby elektrické energie, vztažené na jednotkovou plochu panelů zkoumaných v této práci, jsou (7±3) mW. Tyto dosažené hodnoty dělají ze světelných zdrojů založených na ACPEL technologii zajímavé kandidáty pro různé aplikace. Vlivu rostoucí amplitudy a frekvence budícího napětí na dlouhodobou stabilitu panelů je důležitým cílem této práce. Pro popis stability byly zavedeny parametry L50 and L75. Bylo zjištěno, že rostoucí frekvence budícího napětí zkracuje životnost panelů. Laminovaný panel napájený napětím s přibližně trojnásobně vyšší frekvencí vykazoval přibližně třetinové hodnoty parametrů L50 a L75. Nejvyšších hodnot stabilitních parametrů dosahoval panel enkapsulován mezi skleněné pláty – přibližně sedminásobnou hodnotu oproti laminovanému panelu s trojnásobnou frekvencí. Optimální stability panelů lze dosáhnout při nastavení frekvence v rozmezí 400–800 Hz a zapouzdřením mezi sklo. Úzká paleta odstínů barev emitovaného světla je jeden z typických problémů, který dále zkoumán v dizertační práci. Tato práce zkoumá nadějnou metodu, přídavek vhodného materiálu pro konverzi barvy (CCM). Nový derivát diketopyrrolopyrrolu (DPP), absorbující v modré oblasti, byl přidán k modrému fosforu a byl pozorován sedminásobný narůst hodnot absolutního spektrálního ozáření v oblasti vlnových délek odpovídajících maximální emisi CCM materiálu. Jednoduchost přípravy vyvinutých zdrojů světla spolu s velmi nízkou spotřebou a vysokou dobou života dělají z ACPEL panelů zajímavé kandidáty pro podsvícení prvků například v automobilovém průmyslu, pro dekorativní osvětlení, pro „branding“ – zvýraznění reklamních značek.

V této diplomové práci je nejprve ve zkratce uvedena teorie fyziky solárních článků, kde jsou zmíněny klíčové procesy ovlivňující účinnost konverze slunečního záření na elektrickou energii. Dále je předložena rešerše o fotovoltaických nanostrukturách (nanodráty, nanokrystaly), jejichž implementací je možné účinnost solárních článků zvýšit. V přehledu experimentálních technik ke zkoumání fotovoltaických nanostruktur je důraz kladen zejména na korelativní měření pomocí SEM a AFM, vodivostního AFM, měření EBIC a mikroskopické měření elektroluminiscence. V experimentální části jsou předloženy výsledky měření struktur mikrokrystalického křemíku, vzorku hetero-přechodového Si solárního článku s kontakty na zadní straně (IBC-SHJ z projektu NextBase) a V-pitů vzorku InGaN/GaN kvantových jam. Měření elektroluminiscence bylo provedeno na vzorcích III-V polovodičů (InGaP, GaAs). Byly vypočítány jinak těžko dostupné charakteristiky III-V tandemových solárních článků pomocí elektroluminiscence a srovnání vlastností IBC-SHJ zjištěných pomocí mikroskopického měření elektroluminiscence a EBIC. Provedením experimentů bylo zjištěno, jakým způsobem se dělí proud vybuzený svazkem elektronů mezi hrot AFM a vzorek mikrokrystalického křemíku.

[pt] Nesta dissertação foram estudadas as propriedades ópticas, eletroquímicas, elétricas e morfológicas de novos compostos fluorescentes para o desenvolvimento de OLEDs. Para isto, foram estudadas algumas sondas moleculares fluorescentes utilizadas na área biomédica como agentes antitumorais e marcadores ópticos fluorescentes: a) N,N - diisonicotinoil-2-hidroxi-5 metilisoftaldeído diidrazona (DMD); b) 2-(5 -isotiocianato-2 -hidroxifenil)benzoxazol, (5ONCS); c) 1,1 -dipireno (DIPI) e d) 7,7 -terc-butil-1,1- dipireno (TDIPI). Todos estes compostos foram sintetizados por Grupos de pesquisa brasileiros e depositados termicamente em forma de filmes finos no nosso Laboratório. No decorrer do estudo de fabricação dos OLEDs, os dispositivos bicamada baseados no DMD e no 5ONCS se mostraram pouco eficientes devido principalmente à baixa condutividade do DMD e à elevada rugosidade da camada de 5ONCS. A solução destes problemas foi encontrada na técnica de codeposição, que consiste na evaporação simultânea de uma matriz orgânica e de um dopante (DMD ou 5ONCS) numa única camada. Desta forma, foi possível alcançar um aumento da mobilidade das cargas nas camadas co-depositadas alem de favorecer a transferência de energia da matriz para o dopante. Os OLEDs fabricados nestas condições permitiram observar, pela primeira vez, a eletroluminescência dos compostos DMD e 5ONCS. Já os OLEDs baseados nas moléculas DIPI e TDIPI apresentaram eletroluminescência sem a necessidade da co-deposição. Em particular, no caso do OLED baseado no TDIPI foi possível alcançar uma luminância de 1430 cd/m2 com uma eficiência de 2,65 porcento a 1mA. Os resultados deste trabalho evidenciam a potencialidade do uso destes materiais para a fabricação de OLEDs para aplicações na área de iluminação. / [en] In this study the optical, electrochemical, electrical and morphological properties of new fluorescent compounds were studied in order to develop OLEDs based upon these materials. For this purpose some fluorescent molecular probes used in the biomedical field as antitumor agents and fluorescent optical probes were studied: a) N,N diisonicotinoyl-2-hydroxy-5-methylisophthalaldehyde dihydrazone (DMD ), b) 2 - (5 -isothiocyanato -2-hydroxyphenyl) benzoxazole ( 5ONCS ), c) 1,1 - dipyrene (DIPI) and d) 7,7 -tertbutyl- 1,1-dipyrene (TDIPI ). All these compounds were synthesized by Brazilian research groups and then thermally deposited as thin films in our Laboratory. During the study for the fabrication of OLEDs, bilayer devices based on DMD and 5ONCS proved to have low efficiency mainly due to the low conductivity of the DMD and the high roughness of the 5ONCS layer. The solution of these problems was found in the codeposition technique, which consists in the simultaneous evaporation of an organic matrix (host) and a dopant (guest) (5ONCS or DMD) in a single layer. Thus, it was possible to achieve an increase in the charge mobility in the co-deposited layers as well as energy transfer from the guest to the host. The OLEDs fabricated in these conditions allowed the observation, for the first time, of the electroluminescence of DMD and 5ONCS. On the other hand, the DIPI and TDIPI based OLEDs presented good electroluminescence without the need for co-deposition. In particular, in the case of the TDIPI it was possible to achieve a luminance of 1430 cd/m2 with an efficiency of 2.65 percent at 1 mA. The results of this work showed the potential of these materials for the fabrication of OLEDs for lighting applications.

The aim of this diploma thesis is an innovation of photoluminescence measure research workplace for measurement of cells structure defects by method of transmissive illumination while employing the current methods of measurement of defect in the solar cells structure. The first part deals with explanation of historical development of solar energy, of how we can reach production of electric power with contribution of solar radiation and defines usability of solar cells in practice. The thesis further analyses a practical application of measurement via laboratory diagnostic methods used by Department of Electrotechnology Brno University of Technology. The second part is focused on mechanical design of experimental photoluminescence measure workspace used for quick diagnostic defects employing the rear arousing source for detection of defects with assistance of transmissive system of illumination. Finally, with co-operation of SOLARTEC s.r.o. three types of solar cells are measured by this new method and compared with results of measurement via diagnostic methods of LBIV (Light Beam Induced Current), LBIC (Light Beam Induced Voltage), Electroluminescence, Photoluminescence, and detection defects by radiation of Microplasma.

This diploma thesis deals with the issues of photovoltaic cells. The main aim of this thesis is to introduce the principles of operation of solar cells and methods of detection of defects affecting their quality. The first part is about the functional properties of silicon cells and it also examines the possibilities of detecting the defects of these structures. It also describes the most commonly used modern diagnostic methods. In the next part, practical tests of photovoltaic cells using the methods electroluminescence and photoluminescence are performed. These methods are based on the excitation of luminescence radiation of the silicon material by the external light source.

This work focusses on the development of top-emitting white organic light-emitting diodes (OLEDs), which can be fabricated on metal substrates. Bottom-emitting OLEDs have been studied intensively over the years and show promising perspectives for future commercial applications in general lighting. The development of top-emitting devices has fallen behind despite the opportunities to produce these devices also on low-cost opaque substrates. This is due to the challenges of top-light-emission concerning the achievement of a broad and well-balanced white emission spectrum in presence of a strong microcavity. The following work is a further step towards the detailed understanding and optimization of white top-emitting OLEDs. First, the available metal substrates and the deposited silver electrodes are examined microscopically to determine their surface characteristics and morphology in order to assess their applicability for thin-film organic stacks of OLEDs. The examination shows the suitability for untreated Alanod metal substrates, which display low surface roughness and almost no surface defects. For the deposited silver anodes, investigations via AFM show a strong influence of the deposition rate on the surface roughness. In the main part of the work top-emissive devices with both hybrid and all-phosphorescent architecture are investigated, in which three or four emitter materials are utilized to achieve maximum performance. The feasibility for top-emitting white OLEDs in first and second order devices is investigated via optical simulations, using the example of a three-color hybrid OLED. Here, the concept of a dielectric capping layer on top of the cathode is an essential criterion for broadband and nearly angle independent light emission. The main focus concerning the investigation of fabricated devices is the optimization of the organic stacks to achieve high efficiencies as well as excellent color quality of warm white emission. The optimization of the hybrid layer structure based on three emitter materials using a combined aluminum-silver anode mirror resulted in luminous efficacies up to 13.3 lm/W and 5.3 % external quantum efficiency. Optical analysis by means of simulation revealed a superior position concerning internal quantum efficiency compared to bottom-emitting devices with similar layer structure. The devices show an enhanced emission in forward direction compared to an ideal Lambertian emitter, which is highly preferred for lighting applications. The color quality - especially for devices based on a pure Al anode - is showing excellent color coordinates near the Planckian locus and color rending indices up to 77. The introduction of an additional yellow emitter material improves the luminous efficacy up to values of 16.1 lm/W and external quantum efficiencies of 5.9 %. With the choice of a all-phosphorescent approach, using orange-red, light blue and green emitter materials, luminous efficacies of 21.7 lm/W are realized with external quantum efficiencies of 8.5 %. Thereby, color coordinates of (x, y) = (0.41, 0.45) are achieved. Moreover, the application of different crystalline capping layers and alternative cathode materials aim at a scattering of light that further reduces the angular dependence of emission. Experiments with the crystallizing material BPhen and thin carbon nanotube films (CNT) are performed. Heated BPhen capping layer with a thickness of 250 nm show a lower color shift compared to the NPB reference capping layer. Using CNT films as cathode leads to a broadband white emission at a cavity thickness of 160 nm. However, due to very high driving voltages needed, the device shows low luminous efficacy. Finally, white top-emitting organic LEDs are successfully processed on metal substrates. A comparison of three and four color based hybrid devices reveal similar performance for the devices on glass and metal substrate. Only the devices on metal substrate show slightly higher leakaged currents. During repeated mechanical bending experiments with white devices deposited on 0.3 mm thin flexible Alanod substrates, bending radii up to 1.0 cm can be realized without device failure. / Diese Arbeit richtet ihren Schwerpunkt auf die Entwicklung von top-emittierenden weißen organischen Leuchtdioden (OLEDs), welche auch auf Metallsubstraten gefertigt werden können. Im Laufe der letzten Jahre wurden bottom-emittierende OLEDs sehr intensiv studiert, da sie vielversprechende Perspektiven für zukünftige kommerzielle Anwendungen in der Allgemeinbeleuchtung bieten. Trotz der Möglichkeit, OLEDs auch auf kostengünstigen lichtundurchlässigen Substraten fertigen zu können, blieb die Entwicklung von top-emittierenden Bauteilen dabei allerdings zurück. Dies läßt sich auf die enormen Herausforderungen von top-emittierenden OLEDs zurückführen, ein breites und ausgeglichenes weißes Abstrahlungsspektrum in Gegenwart einer Mikrokavität zu generieren. Die folgende Arbeit liefert einen Beitrag zum detaillierten Verständnis und der Optimierung von weißen top-emittierenden OLEDs. Zunächst werden die verfügbaren Metallsubstrate und abgeschiedenen Silberelektroden auf ihre Oberflächeneigenschaften und Morphologie mikroskopisch untersucht, um damit ihre Verwendbarkeit für organische Dünnfilmstrukturen in OLEDs einzuschätzen. Die Untersuchung zeigt eine Eignung von unbehandelten Alanod Metallsubstraten auf, welche eine niedrige Oberflächenrauigkeit und fast keine Oberflächendefekte besitzen. Bei den abgeschiedenen Silberelektroden zeigen Untersuchungen mit dem Rasterkraftmikroskop eine starke Beeinflussung der Oberflächenrauigkeit durch die Aufdampfrate. Im Hauptteil der Arbeit werden top-emittierende Dioden mit hybrid und voll-phosphoreszenter Architektur untersucht, in welcher drei oder vier Emittermaterialien verwendet werden, um eine optimale Leistungscharakteristik zu erreichen. Die Realisierbarkeit von top-emittierenden weißen OLEDs in Dioden erster und zweiter Ordnung wird durch optische Simulation am Beispiel einer dreifarb-OLED mit Hybridstruktur ermittelt. Dabei ist das Konzept der dielektrischen Deckschicht - aufgebracht auf die Kathode - ein essenzielles Kriterium für breitbandige und annähernd winkelunabhängige Lichtemission. Der Schwerpunkt im Hinblick auf die Untersuchung von hergestellten Dioden liegt in der Optimierung der organischen Schichtstrukturen, um hohe Effizienzen sowie exzellente warmweiße Farbqualität zu erreichen. Im Rahmen der Optimierung von hybriden Schichtstrukturen basierend auf drei Emittermaterialien resultiert die Verwendung eines kombinierten Aluminium-Silber Anodenspiegels in einer Lichtausbeute von 13.3 lm/W und einer externen Quanteneffizienz von 5.3 %.Eine optische Analyse mit Hilfe von Simulationen zeigt eine überlegene Stellung hinsichtlich der internen Quanteneffizient verglichen mit bottom-emittierenden Dioden ähnlicher Schichtstruktur. Die Dioden zeigen eine verstärkte vorwärts gerichtete Emission im Vergleich zu einem idealen Lambertschen Emitter, welche in hohem Maße für Beleuchtungsanwendungen erwünscht ist. Es kann eine ausgezeichnete Farbqualität erreicht werden - insbesondere für Dioden basierend auf einer reinen Aluminiumanode - mit Farbkoordinaten nahe der Planckschen Strahlungskurve und Farbwiedergabeindizes bis zu 77. Die weitere Einführung eines zusätzlichen gelben Emittermaterials verbessert die Lichtausbeute auf Werte von 16.1 lm/W und die externe Quanteneffizient auf 5.9 %. Mit der Wahl eines voll-phosphoreszenten Ansatzes unter der Verwendung eines orange-roten, hellblauen und grünen Emittermaterials werden Lichtausbeuten von 21.7 lm/W und externe Quanteneffizienten von 8.5 % erzielt. Damit werden Farbkoordinaten von (x, y) = (0.41, 0.45) erreicht. Darüberhinaus zielt die Verwendung von verschiedenen kristallinen Deckschichten und alternativen Kathodenmaterialien auf eine Streuung des ausgekoppelten Lichts ab, was die Winkelabhängigkeit der Emission vermindern soll. Experimente mit dem kristallisierenden Material BPhen und dünnen Filmen aus Kohlenstoffnanoröhren werden dabei durchgeführt. Geheizte BPhen Deckschichten mit einer Schichtdicke von 250 nm zeigen eine geringere Farbverschiebung verglichen mit einer NPB Referenzdeckschicht. Die Verwendung von Kohlenstoffnanoröhren als Kathode führt zu einer breitbandigen weißen Emission bei einer Kavitätsschichtdicke von 160 nm. Schließlich werden weiße top-emittierende organische Leuchtdioden erfolgreich auf Metallsubstraten prozessiert. Ein Vergleich von drei- und vierfarb-basierten hybriden Bauteilen zeigt ähnliche Leistungsmerkmale für Dioden auf Glas- und Metallsubstraten. Während wiederholten mechanischen Biegeexperimenten mit weißen Dioden auf 0.3 mm dicken flexiblen Alanodsubstraten können Biegeradien bis zu 1.0 cm ohne Bauteilausfall realisiert werden.

We demonstrate a new approach for fabricating alternating current driven organic electroluminescent devices using the concept of doping in organic semiconductors. Doped charge transport layers are used for generation of charge carriers within the device, hence eliminating the need for injecting charge carriers from external electrodes. The device is an organic-inorganic hybrid: We exploit the mechanical strength and chemical stability of inorganic semiconductors and combine it with better optical properties of organic materials whose emission color can be chemically tuned so that it covers the entire visible spectrum. The device consists of an organic electroluminescence (EL) layer composed of unipolar/ambipolar charge transport materials doped with organic dyes (10 wt% ) as well as molecularly doped charge generation layers enclosed between a pair of transparent insulating metal oxide layers. A transparent indium doped tin oxide (ITO) layer acts as bottom electrode for light outcoupling and Aluminium (Al) as top reflective electrode. The electrodes are for applying field across the device and to charge the device, instead of injection of charge carriers in case of direct current (DC) devices. Bright luminance of up to 5000 cd m-2 is observed when the device is driven with an alternating current (AC) bias. The luminance observed is attributed to charge carrier generation and recombination, leading to formation of excitons within the device, without injection of charge carriers through external electrodes.

Single self-assembled semiconductor quantum dots (QDs) are able to emit single-photons and entangled-photons pairs. They are therefore considered as potential candidate building blocks for quantum information processing (QIP) and communication. To exploit them fully, the ability to precisely control their optical properties is needed due to several reasons. For example, the stochastic nature of their growth ends up with only little probability of finding any two or more QDs emitting indistinguishable photons. These are required for two-photon quantum interference (partial Bell-state measurement), which lies at the heart of linear optics QIP. Also, most of the as-grown QDs do not fulfil the symmetries required for generation of entangled-photon pairs. Additionally, tuning is required to establish completely new systems, for example, 87Rb atomic-vapors based hybrid semiconductoratomic (HSA) interface or QDs with significant heavy-hole (HH)-light-hole (LH) mixings. The former paves a way towards quantum memories and the latter makes the optical control of hole spins much easier required for spin- based QIP. This work focuses on the optical properties of a new type of QDs optimized for HSA experiments and their broadband tuning using strain. It was created by integrating the membranes, containing QDs, onto relaxor-ferroelectric actuators and was quantified with a spatial resolution of ~1 µm by combining measurements of the µ-photoluminescence of the regions surrounding the QDs and dedicated modeling. The emission of a neutral exciton confined in a QD usually consists of two fine-structure-split lines which are linearly polarized along orthogonal directions. In our QDs we tune the emission energies as large as ~23meV and the fine-structure-splitting by more than 90 µeV. For the first time, we demonstrate that strain is able to tune the angle between the polarization direction of these two lines up to 40° due to increased strain-induced HH-LH mixings up to ~55%. Compared to other quantum emitters, QDs can be easily integrated into optoelectronic devices, which enable, for example, the generation of non-classical light under electrical injection. A novel method to create sub-micrometer sized current-channels to efficiently feed charge carriers into single QDs is presented in this thesis. It is based on focused-laserbeam assisted thermal diffusion of manganese interstitial ions from the top GaMnAs layer into the underlying layer of resonant tunneling diode structures. The combination of the two methods investigated in this thesis may lead to new QDbased devices, where direct laser writing is employed to preselect QDs by creating localized current-channels and strain is used to fine tune their optical properties to match the demanding requirements imposed by QIP concepts.