This thesis deals with theoretical studies of electronic properties of organic conjugated molecules. The first chapter introduces different classes of organic conjugated molecules which possess high hole mobility, large quadratic non-linear response and low band gap. In this chapter, we further describe different photo-physical processes and the basic principles of various opto-electronic devices. The second chapter provides an introduction to various many-body techniques, which are employed in studying ground and excited state properties of organic conjugated systems. First, we describe the Hartree-Fock theory and the Density Functional (DFT) method. These are followed by full Configuration-Interaction (CI) methods and various semi-empirical methods (CNDO, INDO and NDDO). The INDO method is used in subsequent chapters to obtain the ground and excited state properties of organic conjugated molecules. In addition, we describe the restricted CI (SCI and SDCI) and the Density Matrix Renormalization Group (DMRG) methods. The third chapter of this thesis deals with a time evolution study to ascertain the role of the triplet state in the green emission of the ethyl-hexyl substituted poly-fluorene (PF2/6) films. To understand this phenomenon, we have modeled various non-radiative processes like (i) Inter-System Crossing (ISC), (ii) electron-hole Recombination (e-hR) and (iii) Triplet Quenching (TQ). These studies conclusively prove the contribution of triplet states to the 500 nm EL peak. In chapter four, we describe the origin of the unusual EL in tri-p-tolylamine (TTA) based hole conductors. In order to model this phenomenon, we have performed SCI calculations on TTA, its radical ions and allied hole conductors (TAPC and TPD). These calculations indicate that the unusual EL is due to low-lying charge-transfer (CT) state, which is stabilized by charge-dipole and charge-induced-dipole interactions. In chapter five, we turn our attention to the calculation of ground and excited state properties of a class of donor-acceptor (DA) system using ab-initio DFT and INDO methods. In these systems, DFT calculations along with INDO-SCI calculation, show strong intramolecular charge transfer interaction between the D and the A units. We have further calculated various properties like permanent dipole moments, oscillator strengths, Stoke’s shifts in various solvents etc. In chapter six, we focus on studying linear and non-linear optical properties of first generation nitrogen based dendrimers, using DMRG method. A novel scheme which includes the weights of the dipole allowed states in the computation of the density matrix is developed to obtain accurate dipole allowed excited states as well as the linear and nonlinear optical responses. Chapter seven deals with non-linear optical properties of weak donor-acceptor (DA) complexes formed between methyl substituted phenylenes (donor) and Chloranil or DDQ (acceptors). We have calculated the ground and the low-lying excited states of these DA complexes using INDO-SDCI method. The first hyperpolarizability (β) response coefficients are calculated using the Correction Vector (CV) technique, which are further used to obtain macroscopic depolarization ratios. By comparing the theoretical results with experimental findings, it can be shown that the slipped parallel configuration with a slight twist is the most preferred geometry of these weak DA complexes in solution.

This diploma thesis is studing the possibilities of influencing the optoelectric properties of printed light emitting panels, which work on the principle of electroluminescence excited by alternating electric field. The aim of this worrk is to monitor the influence od dielectric properties of electroluminescent phosphor binder on the targeted electroluminescence. In the theoretical part of this thesis, there are described principles of electroluminescence, suitable materials methods of characterization and preparation of panels using printing techniques. Experiment part contains electrical characterization of selected binders to determine their dielectric constants. Subsequently, printing pastes were formulated in different weight ratios of binder electroluminescent phosphor and model light-emitting panels were prepared. Optoelectric characterization was used to determine the change in irradiance. It was found that the dielectric properties of the binder significantly affect the resulting irradinace. It has same irradiance for a smaller amount od phosphor than with the binder with a low dielectric constant. The finding of this work can be used to improve the luminosity at the electroluminescent panels.

Master`s thesis in the first part deals with the theoretical description of the basics of photovoltaics, principles of solar cell, failures occurring in solar cells. There were also described diagnostic methods for measuring the solar cells and methods of temperature measurements and control . The second part of the thesis deals with the practical measurements of solar cells by electroluminescence at different temperatures. This chapter also describes measuring workplace of solar cells with temperature control.

This thesis deals with the influence of degradation mechanisms to change the parameters of photovoltaic panels. The aim of the study was the long-term monitoring of selected solar modules, comparing their parameters with measurements from previous years and the evaluation of degradation mechanisms on their properties. The theoretical part is focused on the description of the monitored parameters and defects Panel, are discussed measuring methods by which the modules were monitored. Experimental part then consists of measuring modules individual test methods. The measured values were subsequently constructed graphical dependence, and the results were compared with measurements from previous years. The last part of the thesis is devoted to evaluation of the degradation of PV modules.

The aim of this work was to find a correlation between the electrical, optical and microstructural properties of thin SiO2 layers containing group IV nanostructures produced by ion beam synthesis. The investigations were focused on two main topics: The electrical properties of Ge- and Si-rich oxide layers were studied in order to check their suitability for non-volatile memory applications. Secondly, photo- and electroluminescence (PL and EL) results of Ge-, Si/C- and Sn-rich SiO2 layers were compared to electrical properties to get a better understanding of the luminescence mechanism.

This work focusses on the high brightness performance of phosphorescent organic light-emitting diodes (OLEDs). The use of phosphorescent emitter molecules in OLEDs is essential to realize internal electron-photon conversion efficiencies of 100 %. However, due to their molecular nature, the excited triplet states have orders of magnitude longer time constants compared to their fluorescent counterparts which, in turn, strongly increases the probability of bimolecular annihilation. As a consequence, the efficiencies of phosphorescent OLEDs decline at high brightness – an effect known as efficiency roll-off, for which it has been shown to be dominated by triplet-triplet annihilation (TTA). In this work, TTA of the archetype phosphorescent emitter Ir(ppy)3 is investi- gated in time-resolved photoluminescence experiments. For the widely used mixed system CBP:Ir(ppy)3, host-guest TTA – an additional unwanted TTA channel – is experimentally observed at high excitation levels. By using matrix materials with higher triplet energies, this effect is efficiently suppressed, however further studies show that the efficiency roll-off of Ir(ppy)3 is much more pronounced than predicted by a model based on Förster-type energy transfer, which marks the intrinsic limit for TTA. These results suggest that the emitter molecules show a strong tendency to form aggregates in the mixed film as the origin for enhanced TTA. Transmission electron microscopy images of Ir(ppy)3 doped mixed films give direct proof of emitter aggregates. Based on these results, two concepts are developed that improve the high brightness performance of OLEDs. In a first approach, thin intrinsic matrix interlayers are incorporated in the emission layer leading to a one-dimensional exciton confinement that suppresses exciton migration and, consequently, TTA. The second concept reduces the efficiency roll-off by using an emitter molecule with slightly differ- ent chemical structure, i.e. Ir(ppy)2(acac). Compared to Ir(ppy)3, this emitter has a much smaller ground state dipole moment, suggesting that the improved performance is a result of weaker aggregation in the mixed film. The knowledge gained in the investigation of triplet-triplet annihilation is further used to develop a novel emission layer design for white organic LEDs. It comprises three phosphorescent emitters for blue, green, and red emission embedded in a multilayer architecture. The key feature of this concept is the matrix material used for the blue emitter FIrpic: Its triplet energy is in resonance with the FIrpic excited state energy which enables low operating voltages and high power efficiencies by reducing thermal relaxation. In order to further increase the device efficiency, the OLED architecture is optically optimized using high refractive index substrates and thick electron transport layers. These devices reach efficiencies which are on par with fluorescent tubes – the current efficiency benchmark for light sources. / Diese Arbeit richtet ihren Fokus auf die Untersuchung der Leistungsfähigkeit von phosphoreszenten, Licht-emittierenden organischen Dioden (OLEDs) im Bereich hoher Betriebshelligkeiten. Phosphoreszente Emittermoleku ̈le werden in OLEDs eingesetzt, um interne Elektron-Photon Konversionseffizienzen von 100% zu erreichen. Begründet in ihrer chemischen Struktur, weisen die angeregten Triplett-Zustände dieser Emitter um Größenordnungen längere Zeitkonstanten als die Emission fluo- reszenter Materialien auf, sodass die Wahrscheinlichkeit bimolekularer Auslöschung stark ansteigt. Dies resultiert in einem deutlichen Effizienzrückgang phosphoreszenter OLEDs bei großen Leuchtdichten. Dieser als Roll-off bekannter Effekt wird bei hohen Anregungsdichten hauptsächlich durch Triplett-Triplett Annihilation (TTA) bestimmt. In der Arbeit wird TTA an einem Modellmolekül, dem phosphoreszenten Emit- ter Ir(ppy)3, in zeitaufgelösten Photolumineszenz Experimenten untersucht. Für das bekannte Emittersystem CBP:Ir(ppy)3 wird bei hohen Anregungsdichten Host-Guest TTA beobachtet, was einen zusätzlichen, ungewünschten TTA Kanal darstellt. Dieser Effekt wird durch das Verwenden von Matrix Materialien mit höherer Triplett Energie vermieden, jedoch zeigt sich in weiteren Untersuchungen, dass der Roll-off deutlich stärker ist als von einem auf Förster Energieübertrag basierendem Modell vorhergesagt, welches selbst ein intrinsisches Limit für TTA in phosphoreszenten Systemen beschreibt. Die Diskrepanz zwischen experimenteller Beobachtung und Modellvorhersage wird durch eine starke Tendenz des Emitters, Aggregate zu bilden, erklärt, was TTA deutlich verstärkt. Diese Aggregate werden mit Hilfe von Transmissionselektronenmikroskopie an Ir(ppy)3-dotierten Mischsystemen direkt nachgewiesen. Basierend auf diesen Resultaten werden zwei Konzepte entwickelt, um die Effizienz phosphoreszenter Systeme bei hohen Helligkeiten zu verbessern. Im ersten Ansatz werden dünne intrinsische Schichten des Matrixmaterials in die Emissionsschicht eingebaut, was die Exzitonenbewegung in einer Raumrichtung und damit auch TTA stark unterdrückt. Das zweite Konzept reduziert den Effizienz Roll-off durch die Verwendung eines phosphoreszenten Emitters Ir(ppy)2(acac) mit einer leicht abgeänderten Molekularstruktur. Im Vergleich mit Ir(ppy)3 weist dieser ein deutlich kleineres Dipolmoment im molekularen Grundzustand auf, wodurch die Aggregation vermindert wird. Aufbauend auf den Ergebnissen der TTA wird ein neuartiges Emissionsschicht-Design für weißes Licht entwickelt. In diesem Konzept werden drei phosphoreszente Materialien für blaue, grüne und rote Farbe in eine Vielschicht-Architektur eingebracht. Das Hauptmerkmal der Emissionsschicht ist die Wahl des Matrix-Materials für dem blauen Emitter FIrpic: Seine Triplett Energie liegt resonant zu dem FIrpic Triplett Zustand, wodurch niedrige Betriebsspannungen und hohe Leistungseffizienzen ermöglicht werden, da die thermische Relaxierung reduziert wird. Um die Ef- fizienz dieser weißen OLEDs weiter zu erhöhen, wird die entwickelte OLED Architektur zusätzlich durch die Verwendung von hochbrechenden Substraten und dicken Elektronen-Transportschichten optisch optimiert. Bei beleuchtungsrelevanten Helligkeiten erreichen diese OLEDs das Effizienzniveau von Leuchtstoffröhren – letztere stellen heute den Effizienz-Maßstab dar.

In dieser Arbeit werden zwei Schwerpunkte behandelt. Zum Einen soll der Einsatz nanoskaliger Materialien als Funktionskomponenten in Elektrolumineszenzbauteilen beschrieben werden. Dabei wird in einem ersten Aufbau ein transparenter Nanokompositfilm als emittierende Schicht in einem, den organischen Leuchtdioden, analogen Aufbau eingesetzt, während in einer zweiten Struktur eine transparente Elektrode, die auf nanoskaligen Kohlenstoffmaterialien (Kohlenstoffnanoröhren bzw. Graphenen) basiert, hinsichtlich ihrer Eignung als Alternative zu etablierten transparenten Elektroden untersucht werden soll. In weiterführenden Arbeiten werden die Erfahrungen aus der Graphensynthese auf die Generierung poröser, funktionalisierter Kohlenstoffmaterialien angewendet. Verbindend, wird die Röntgenkleinwinkelstreuung eingesetzt, um in vergleichenden Untersuchungen möglichst detailierte Informationen über die jeweiligen Systeme zu erhalten.

Diese Arbeit beschäftigt sich mit der Bewertung des Breitband-Halbleiters ß-Ga2O3 für die Hochleistungselektronik. Daher sind Schichten, die mit metallorganischer Gasphasenepitaxie (MOVPE) gewachsen sind, und Volumenkristalle, die mit der Czochralski-Methode gewachsen sind, elektrisch und optisch charakterisiert. Dabei werden die grundlegenden Eigenschaften des Materials untersucht und mit den theoretischen Vorhersagen verglichen. Der Einfluss und die Bildung von Defekten werden untersucht. Zu Beginn zeigten die MOVPE-gewachsenen Schichten ungünstige elektrische Eigenschaften, da sie bei niedrigeren Dotierungskonzentrationen vollständig kompensiert wurden und bei höheren Ladungsträgerkonzentrationen eine geringere Ladungsträgerbeweglichkeit aufwiesen. Ein quantitatives Modell des schädlichen Einflusses inkohärenter Zwillingsgrenzen auf elektrische Eigenschaften wird entwickelt, das zeigt, dass die Verhinderung der Bildung von diesen der Schlüssel zur Verbesserung des Materials ist. Die Dichte der inkohärenten Zwillingsgrenzen wurde um 4 Größenordnungen reduziert, was zu einer verbesserten Ladungsträgerbeweglichkeit führte. Dies bietet eine vielversprechende Perspektive für den Einsatz von ß-Ga2O3 in zukünftiger Leistungselektronik. Ramanspektroskopische Untersuchungen an hoch n-dotierten Kristallen zeigen die Bildung eines Störstellenbandes, geben Einblicke in die effektivmasseartige Donatornatur von Si und Sn und zeigen zusätzliche Raman-verbotene, longitudinale Phononen-Plasmonmoden durch Streuung durch Fluktuationen der freien Ladungsträgerdichte. Die relative statische Dielektrizitätskonstante von ß-Ga2O3 senkrecht zu den Ebenen (100), (010) und (001) wird auf 10,2, 10,87 bzw. 12,4 bestimmt, die eine zuverlässige Grundlage für die Simulation und Konstruktion von Bauelementen bilden. Die Erzeugung von heller, roter Elektrolumineszenz (EL) in Sperrrichtung betriebenen Schottky-Barrieredioden auf der Basis von mit Cr und Si co-dotierten Kristallen wird gezeigt. Die EL von Cr ist repräsentativ für die Fähigkeit, die lumineszierenden Zustände anderer Übergangsmetalle anzuregen. Solche lichtemittierenden Schottky-Barrieredioden können ein neues Anwendungsgebiet von ß-Ga2O3 eröffnen. / This thesis deals with the evaluation of the wide band gap semiconductor ß-Ga2O3 for high power electronics. Therefore, layers grown with metal-organic vapor phase epitaxy (MOVPE) and bulk crystals grown by Czochralski method are electrically and optically characterized. Hereby, the fundamental properties of the material are investigated and compared with the theoretical predictions. The influence and formation of defects are investigated. At the beginning the MOVPE grown layers showed unfavorable electrical properties as they were fully compensated at lower doping concentrations and showed lowered mobility at higher charge carrier concentrations. A quantitative model of the detrimental influence of incoherent twin boundaries on electrical properties is developed showing that the prevention of the formation of these is the key to improve the material. The density of incoherent twin boundaries was reduced by 4 orders of magnitude resulting in improved charge carrier mobility. This provides a promising outlook for the use of ß-Ga2O3 in future power electronics. Raman spectroscopic investigations of highly n-type doped crystals reveal the formation of an impurity band, give insight in the effective-mass like donor nature of Si and Sn, and show additional Raman forbidden, longitudinal phonon plasmon modes due to free-electronic-charge density fluctuations scattering. The relative static dielectric constant of ß-Ga2O3 perpendicular to the planes (100), (010), and (001) is determined to 10.2, 10.87, and 12.4, respectively, which give a reliable basis for the simulation and design of devices. The generation of bright, red electroluminescence (EL) in reverse biased Schottky barrier diodes based on crystals co-doped with Cr and Si is shown. The EL of Cr is representative of the ability to excite the luminescent states of other transition metals. Such light emitting Schottky barrier diodes may open up a new application field of ß-Ga2O3.

[pt] Neste trabalho é apresentado o estudo dos dispositivos orgânicos emissores de luz fosforescentes (PHOLED) baseados em compostos de baixo peso molecular. O estudo foi fundamentado nas análises dos complexos baseados no íon de Ir3+: [Ir(t-pzp)2pic] [fac-Ir(t-bupzp)3] e outros complexos já estudados anteriormente a base de Eu3+: [Eu(DBM)3PHEN] e [Eu(DBM)3DMSO2]. No desenvolvimento dos PHOLEDs, a dopagem de uma matriz orgânica com estes complexos reveste uma importância fundamental. Por tanto, como o intuito de estudar e analisar estes sistemas os complexos foram dopados com diversas concentrações em diferentes matrizes orgânicas. Os resultados obtidos revelaram que no caso dos complexos de Ir3+ os melhores valores da concentração do complexo encontram-se na faixa 13-15 porcento em peso. Já no caso dos complexos de íons de terra rara (Eu3+) as melhores concentrações devem ser superiores a 15 porcento em massa, para que ocorra uma transferência de energia eficiente e mantendo o espectro de emissão dos complexos resultando em um aumento da eficiência externa dos dispositivos. Neste trabalho foi desenvolvida também, uma metodologia que, combinando as técnicas de XRF e RBS, permite elaborar um gráfico de calibração para a determinação da concentração efetiva do dopante nos diferentes filmes co-depositados. Finalmente, para aumentar a eficiência dos PHOLEDs foi investigado o efeito da vibração do substrato durante a deposição térmica dos filmes. Os resultados indicam uma redução na densidade de aglomerados e na rugosidade, além de uma melhoria na homogeneidade dos filmes depositados. O aumento de 40 porcento na eficiência do dispositivo fabricados indica que a técnica de vibração é promissora para o desenvolvimento de dispositivos eficientes. / [en] This thesis reports the investigation of the phosphorescent organic light emitting devices (PHOLED) based on low molecular compounds. The study was carried out by analyzes the optical and electrical characteristics of thin films of Ir3+: [Ir(t-pzp)2pic] and [fac-Ir(t-bupzp)3] and other complexes based on Eu3+: [Eu(DBM)3PHEN] and [Eu(DBM)3(DMSO)2]. In developing of PHOLEDs, technology, the doping of an organic matrix with these complexes has a fundamental importance. Therefore, in order to investigate these systems Ir3+ and Eu3+ organic complexes were used as doping with a variety of concentrations in different organic matrix. The results revealed that in the case of Iridium complexes the best values are in the range 13-15 percent. On the other hand, for the rare earth complexes the best concentrations should be greater than 15 percent in order to obtain a efficient energy transfer preserving the emission spectrum of the complexes. Furthermore, the use of the doping results in an increased of the external efficiency of the device. In this work, a methodology combining the XRF and RBS techniques was also developed which allows the direct determination of the effective dopant concentration in co-deposited films through a calibration curve. Finally, to increase the efficiency of the PHOLEDs, the effect of mechanical vibration of the substrate on the thin films characteristics during the thermal deposition was investigated. The results indicate a reduction in the clusters density and film roughness, and an improved homogeneity of the deposited films. The 40 percent increase in efficiency of the devices fabricated under these conditions is a clear indication that the technology holds promise for the development of efficient devices.

Cette thèse est consacrée à l’étude des propriétés optiques et optoélectroniques autour de la bande interdite directe des structures à puits quantiques Ge/SiGe pour la modulation, la photodétection et l’émission de lumière sur la plateforme silicium. Les principaux composants réalisés sont : un modulateur optique en guide d’onde, rapide et à faible puissance électrique, basé sur l’Effet Stark Confiné Quantiquement, les premières photodiodes Ge/SiGe dont le comportement fréquentiel est compatible avec les transmissions de données à 40 Gbit/s, et la première diode à électroluminescence à puits quantiques Ge/SiGe, base sur la transition directe de ces structures et fonctionnant à température ambiante. Les caractérisations statiques et fréquentielles ont été réalisées sur l’ensemble des composants, qui ont tous été fabriqués avec la même structure épitaxiée et les mêmes procédés de fabrication. Des modèles théoriques simples ont ensuite été utilisés pour décrire analyser les comportements observés. Finalement les études menées permettent de conclure que les structures à puits quantiques Ge/SiGe sont un candidat de choix pour la réalisation d’une nouvelle plateforme photonique à haut débit, totalement compatible avec les technologies silicium. / This PhD thesis is devoted to study electro-optic properties of Gemanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells (MQWs) for light modulation, detection, and emission on Si platform. It reports the first development of high speed, low energy Ge/SiGe electro-absorption modulator in a waveguide configuration based on the quantum-confined Stark effect (QCSE), demonstrates the first Ge/SiGe photodiode with high speed performance compatible with 40 Gb/s data transmission, and realizes the first Ge/SiGe light emitting diode based on Ge direct gap transition at room temperature. Extensive DC and RF measurements were performed on each tested prototype, which was realized using the same epitaxial growth and fabrication process. Simple theoretical models were employed to describe experimental properties of the Ge/SiGe MQWs. The studies show that Ge/SiGe MQWs could potentially be employed as a new photonics platform for the development of a high speed optical link fully compatible with silicon technology.