• Refine Query
  • Source
  • Publication year
  • to
  • Language
  • 39
  • 14
  • 13
  • 10
  • 3
  • 1
  • 1
  • 1
  • 1
  • Tagged with
  • 99
  • 99
  • 29
  • 26
  • 26
  • 20
  • 14
  • 14
  • 13
  • 13
  • 13
  • 12
  • 12
  • 12
  • 11
  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
11

Enabling integrated nanophotonic devices in hybrid cmos-compatible material platforms for optical interconnection

Sodagar, Majid 21 September 2015 (has links)
Recent impactful advances in integrated photonics undoubtedly owe much to silicon and its associated enabling platform (SOI). Although silicon has proved to be an indispensable element in many photonic systems yet it seems that it is not the ultimate solution to address all the challenges facing the photonics community. Therefore, integration of silicon with other optical materials featuring diverse properties is highly desirable. Such integration will be conducive to platforms which are naturally more capable and are suited for implementation of a wider range of optical devices and diverse functionalities. This dissertation is dedicated to design and implementation of integrated optical elements for hybrid material platforms. The basic theoretical foundation of integrated photonics is laid out in Chapter 2. In Chapter 3, an interlayer grating coupler for a specific hybrid material platform is designed, and demonstrated. Considering the fact that in almost all integrated photonic platforms, fabrication imperfections lead to an unpredictable shift in the wavelength of operation of individual devices, post fabrication tuning/trimming is inevitable. A number of widely used post fabrication trimming/tuning methods are briefly reviewed in Chapter 4 with special emphasis on a method based on electron beam exposure. In Chapter 5, an ultra-fast, low-power, and self-trimmable electro-optic modulator in demonstrated on a Si-based multilayer platform. Due to its remarkable optical and electronic properties, graphene has become a valuable material for opto-electronic applications. Integration of this novel 2D material with SOI platform is investigated in Chapter 6. Graphene-based electro-optic modulation through absorption and refractive-index change is successfully demonstrated using electrostatic gating mechanism. Chapter 7 is devoted to demonstration of a field-programmable 2 by 2 optical switch on a vertically stacked Si/SiO2/SOI platform. In Chapter 8, the peak-dragging phenomenon in a nanobeam photonic crystal cavity is studied. The optical bistability associated with this nonlinear phenomenon is of great interest for all-optical processing and sensing application. Future directions of this thesis are also discussed in the last Chapter.
12

Beam Switching of an Nd:YAG Laser Using Domain Engineered Prisms in Magnesium Oxide Doped Congruent Lithium Niobate

Evans, Jonathan W. 12 August 2010 (has links)
No description available.
13

Study of Electro-Optic Coefficient of Poled Guest/Host Nonlinear Optical Polymer Thin Film

Chen, Cheng-Hsiang 28 July 2004 (has links)
In this study, we focus on the electric optical characteristic of guest/host polymer system. The charge transfer chromophore Wu182 which contain fluorine atom in it was mixed with polymer PMMA and solved in chloroform, while DR1/PMMA served as reference sample. The wu182/PMMA and DR1/PMMA thin films were produced by spin coating. The thin film was poled at the temperature above glass transition temperature until the second harmonic generation signal was present. The poled thin film was placed in one arm of Mach-Zehnder interferometer. Voltage modulation applied to the polymer films can cause phase changes in the interferometer from that we estimate the electro-optic coefficient. From our experiments, we found that modulating frequency had significant influence on the electro-optic effect. The result shows that Wu182 possess large nonlinear optical coefficient. The valid electro-optic coefficient r13 was obtained to be 2.620 pm/V when the frequency was above 6 kHz.
14

Novel EO polymer-based micro- and nano photonic devices for analog and digital communications

Lee, Beom Suk, 1974- 21 June 2011 (has links)
Polymer-based electro-optical modulators are, generally, applicable to many fields but their applications to analog optical links and silicon photonic integrated circuits are specifically emphasized in this dissertation. This dissertation aims to improve the linearity characteristics of polymer-based electro-optic modulators for their practical application in high speed analog optical links. Domain-inversion technique is employed to linearize a two-section Y-fed directional coupler modulator. The spurious free dynamic range as high as 119dB/Hz2/3 has been demonstrated with 11dB enhancement over the conventional Mach-Zehnder modulator at low frequency. For high speed modulation, a traveling wave electrode with low RF loss and large bandwidth is designed and installed in a linearized Y-fed directional coupler modulator. The spurious free dynamic range has been measured in the range of 110±3dB/Hz2/3 at 2~8GHz frequency. For digital application of polymer-based electro-optic modulators, a hybrid silicon photonic crystal waveguide modulator was investigated with focus on size-reduction and electro-optic efficiency enhancement. The slow group velocity of photonic crystal waveguides promises two orders of magnitude size-reduction in device footprint compared with the conventional strip waveguide. Infiltration of an electro-optic polymer into the slot waveguide can infuse silicon with nonlinear optical properties. To actualize these benefits of a hybrid silicon photonic crystal waveguide modulator, nano-fabrication process was developed and optimized in this work. / text
15

Nanophotonic Silicon Electro-Optic Switch

Simili, Deepak 27 August 2012 (has links)
The design procedure for ultrafast silicon electro-optic switches using photonic crystals in order optimize the operation of the electro-optic switch is presented. The material medium selected for propagation of the optical signal through the switch is silicon nanocrystals in silica. A patterned slot waveguide with one-dimensional photonic crystals is proposed as the preferred slow light waveguide to be used in the design of the electro-optic switch. The ultrafast quadratic electro-optic Kerr effect is the physical effect utilized, and its analysis for slot waveguides is discussed. The optical structure analysis of the electro-optic switch using a ring resonator is presented and it is shown that the use of a slow light waveguide in the ring resonator can reduce the required externally applied electric field and the radius of the ring resonator.
16

Electro Optical Circuit Architecture for Photonic Signal Processing

Jahid, Abu 24 June 2022 (has links)
Microwave photonic applications in the terahertz (THz) region of the spectrum are attracting increasing attention due to the need to find solutions for next-generation (5G/6G) wireless communication systems capable of handling unprecedented data rates. It is crucial to develop millimeter-wave (mm-wave) (30-300GHz) fiber supported transport networks. One of the key questions is, which carrier frequency generation technique will be the most suitable for THz signals above 300 GHz; electronics-based or photonics-based. Since the backbone of the wireless networks is composed by very high-capacity fibre optic cables, the microwave photonic approach has the ultimate advantage of seamless integration with existing optical fibre networks. Although the cost effectiveness is still an open question, simplistic base station architecture with simplified antenna units and high optical component reuse is necessary for enabling a compatible mobile network backhaul. For THz applications a broadband electro-optic modulator (EOM) with a frequency response extending to the sub-terahertz range, high power handling, and very low nonlinear distortions, is required. The objective of this thesis is to study the feasibility of photonic integration and, proof of concept implementations with the effective use of optical components with reduced energy consumption, reduced footprint and offer speed beyond all-electronic implementations. The first study presents a coherent electro-optic photonic integrated circuit deploying generalized Mach-Zehnder interferometer (GMZI) substituting N×1 combiner by an optical N×N discrete Fourier transform (DFT) in order to generate a regularly spaced frequency comb. The proposed design comprises of 1×N splitter that feeds light into a parallel array of N electro-optic phase modulators electrically driven by RF signal with a progressive phase shift with their phase modulated optical outputs processed by an N×N optical DFT. A pragmatic design approach and analytical formulation for implementing MMI based optical DFT in photonic networks composed of waveguide splitters, combiners, and phase-shift elements with necessary circuit diagram for even and odd dimensions are presented. Recently, there has been impressive progress toward ultra-wide band low voltage EOM. The heterogeneous approach of utilizing silicon nitride on lithium niobate waveguide integrated on a single chip is demonstrated for the best optical modulation performance that opens a wide range of opportunities for universal linear optical networks, chip-scale MWP systems, ultra-speed switching of optical communications. Finally, the third study de-scribes the architecture for compact on-chip spectrometry targeting high resolution across the entire C-band to measure the spectral profile of WDM signals reliably and accurately in fixed and flex-grid architectures. The design architecture of technologically viable com-pact on-chip high-resolution wideband spectrometer such as Mach-Zehnder delay interferometers (MZDI), 2×2 directional couplers and multimode interference couplers is presented and verified by software simulation using an industry standard tool. The components simulations that supported the assessment of the feasibility of a spectrometer compliant with the specification made use of the LioniX asymmetric double strip (ADS) waveguide and the low-cost photolithography.
17

Silicon integrated nanophotonic devices for on-chip optical interconnects

Lin, Che-Yun 12 July 2012 (has links)
Silicon is the dominant material in Microelectronics. Building photonic devices out of silicon can leverage the mature processing technologies developed in silicon CMOS. Silicon is also a very good waveguide material. It is highly transparent at 1550nm, and it has very high refractive index of 3.46. High refractive index enables building high index contrast waveguides with dimensions close to the diffraction limit. This provides the opportunity to build highly integrated photonic integrated circuit that can perform multiple functions on the same silicon chip, an optical parallel of the electronic integrated circuit. However, silicon does not have some of the necessary properties to build active optical devices such as lasers and modulators. For Example, silicon is an indirect band gap material that can’t be used to make lasers. The centro-symmetric crystal structure in silicon presents no electro-optic effect. By contrast, electro-optic polymer can be engineered to show very strong electro-optic effect up to 300pm/V. In this research we have demonstrated highly compact and efficient devices that utilize the strong optical confinement ability in silicon and strong electro-optic effect in polymer. We have performed detailed investigations on the optical coupling to a slow light waveguide and developed solutions to improve the coupling efficiency to a slow light photonic crystal waveguides (PCW). These studies have lead to the demonstration of the most hybrid silicon modulator demonstrate to date and a compact chip scale true time delay module that can be implemented in future phased array antenna systems. In the future, people may be able to realize a photonic integrated circuit for optical communication or sensor systems using the devices we developed in our research. / text
18

Investigations Into The Structural, Dielectric And Optical Properties Of Glasses Containing Electro-Optic Components And Single Crystals Of Molecular Electro-Optic Materials

Shankar, M V 10 1900 (has links) (PDF)
No description available.
19

Sobre a preparação de um sistema para medida do efeito eletro-ótico em cristais e resultados obtidos, para centro \'F\' em alguns halogenetos alcalinos / About the preparation of a system for measuring the electro-optic effect in crystals and obtained results for F-center in some alkali halides

Kfuri, Jorge Feres 24 June 1974 (has links)
A montagem de um sistema que permite a detecção de modulação no coeficiente de absorção ótica, devido ao campo elétrico aplicado, foi concluída. A máxima sensibilidade atingida foi de &#916 K / K = 1,5 x 10-6 com resolução em comprimento de onda de 3 nm. O efeito Stark de 2&#170 ordem, na freqüência dupla da do campo elétrico aplicado foi medido para o centro F em KCl e KBr e comparado com provisões teóricas. Os valores obtidos para o KCl coincidem com os de Chiarotti, o que confirma o bom funcionamento do sistema, e diferem dos valores calculados teoricamente. Essa diferença é atribuída à correção do campo local. Os valores obtidos experimentalmente para a variação relativa do coeficiente de absorção foram: para KCl: &#916K / K = 2,93 x 10-5 (78&#176 K) para KBr: &#916K / K = 2,85 x 10-5 (78&#176 K) / The assembly of a system which allows the detection of modulation in the coefficient of optical absorption, due to the applied electrical field, was completed. The maximum sensitivity achieve was &#916 K / K = 1,5 x 10-6, in wave length, of 3 nm. The Stark effect of second order, in the frequency twice as that of the applied electrical field was measured for the center F in KCl and KBr and compared with theoretical previsions. The values obtained for KCl coincide with those of Chiarotti\'s, which confirms the good functioning of the system, and differ from the values calculated theoretically. This difference in ascribed to the correction of the local field. for KCl: &#916K / K = 2,93 x 10-5 (78&#176 K) for KBr: &#916K / K = 2,85 x 10-5 (78&#176 K).
20

Caracterização dielétrica e eletroóptica do copolímero acrílico funcionalizado com o cromóforo 4-[N-etil-N-(2-hidroxietil)]amino-2-cloro-4-nitro-azobenzeno / Dielectric and electro-optic characterization of the acrylic copolymer containing 4-[N-etyl-N-(2-hydroxietil)]amie-2-cloro-4-nitro-azobenzene group

Ribeiro, Paulo Antonio Martins Ferreira 04 October 1999 (has links)
Neste trabalho foi investigado o processo de relaxação em copolímeros metacrilicos funcionalizados com o grupo cromóforo 4-[N-etil-N-(2-hidroxietil)]amino-2\'-cloro-4\'nitro-azobenzeno (MMADRI3). Os copolímeros sintetizados foram caracterizados por espectrofotometria de visível e infravermelho, calorimetria diferencial de varredura, análise termogravimétrica e elipsometria. O triodo de corona foi utilizado para induzir a orientação dos cromóforos dipolares a temperaturas próximas da transição vítrea. Os valores do coeficiente eletroóptico linear r13 de filmes obtidos por derramento de solução podem alcançar 14 pm/V em amostras funcionalizadas com 43%de cromóforo.O efeito piezoelétricoé significativo para amostras contendo 4% de cromóforo sendo a sua origem atribuída à carga espacial. A relaxação orientacional dos cromóforos foi estudada medindo-se o decaimento do coeficiente eletroóptico e a relaxação dielétrica a diferentes temperaturas. O processo de relaxação foi interpretado utilizando a equação de Kohlraush-Williams-Watts (KWW) aplicada aos domínios do tempo e da freqüência. O tempo de relaxação característico &#964 e o parâmetro b da equação de KWW foram obtidos como função da temperatura desde a temperatura ambiente até acima da temperatura de transição vítrea. O parâmetro b à temperatura de transição vítrea aproxima-se de 0,6 valor que é atribuído a forças de curto alcance. As medidas dielétricas revelaram duas bandas de relaxação &#946 e &#945 respectivamente a baixas e a altas temperaturas. A relaxação a está relacionada com a transição vítrea e à desorientação dos cromóforos. A dependência de &#964 foi fundamentada nas equações de Arrhenius e de Vogel-Fulcher-Tarmnann-Hesse (VFTH), respectivamente a baixas e a altas temperaturas. Os parâmetros de VFTH encontram-se próximos dos considerados universais. O comportamento de &#964 em toda a gama de temperaturas, foi explicado pela equação de Adam-Gibbs, usando-se os parâmetros de VFTH. O resfriamento a taxas lentas após o processo de polarização aumenta substancialmente o tempo de relaxação e a sua energia de ativação. Os expoentes m e n do modelo de Dissado-Hill baseado na interação de multicorpos foram obtidos em função da temperatura. Os valores do parâmetro n ficam dentro do esperado pela teoria / The relaxation process of side-chain methacrylate copolymers functionalized with the nonlinear optical azo chromophore 4-[Nethyl-N-(2-hydroxyethyl)]-amino-2\'-chloro-4-nitroazobenzene (MMADR13) was investigated. The copolymers synthesized were characterized by visible and infrared spectrophotometry, differential scanning calorimetry, thermogravimetric analysis and ellipsometry. The corona triode was employed to induce the orientation of the dipolar chromophore at a temperature near the glass transition. The linear eletrooptic coefficient r13 of cast fllms can reach values as high as 14 pm/V in samples with 43% of chromophore contento The piezoeletric effect attributed to space charge was only significant in the lowest chromophore content samples (4%). Electrostriction was shown to affect to some extent the quadratic electrooptic measurements. The chromophore relaxation at different temperatures was investigated by both electrooptic decay and dielectric measurements. The relaxation process was interpreted using the Kohlraush-Williams-Watts (KWW) equation both in the time and frequency domains. From the KWW equation the characteristic relaxation time &#964 and the stretching parameter b were obtained from room temperature to temperatures above the glass transition. Near the glass transition b is ca 0.6 which is characteristic of short range interactions. Dielectric measurements revealed two relaxation bands, &#946 and &#945, at low and high temperatures, respectively. The &#945 relaxation was attributed to the glass transition and to the 10ss of chromophore orientational order. The temperature behavior of &#964 was interpreted by the Arrhenius and Vogel-Fulcher-Tammann-Hesse (VFTH) equations. at low and high temperatures. respectivelly. The VFTH parameters lie close to the so-called universal values. In addition the overall temperature dependence was explained by the Adam-Gibbs equation using the VFTH parameters. Using a small cooling rate after corona poling increases substantially the relaxation time and the activation energy .The power law exponents m and n. from Dissado-Hill manybody interactions model were obtained as a function of temperature. The n values are in the range of expected values for the many-body interactions model

Page generated in 0.0953 seconds