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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
31

Système de mesure de champ électrique pour la caractérisation sans contact, vectorielle et à grande dynamique de la tension basse fréquence en environnement industriel / Contact-less and and vectorial measurement system for low frequency voltage characterization in industrial environment

Gillette, Laurane 27 October 2016 (has links)
L’objectif de ces travaux de thèse est de faire la preuve de concept, la validation expérimentale et la réalisation de système de mesure de champ électrique pour la caractérisation de câbles monoconducteur, multiconducteurs ou d’équipements de tension basse fréquence en environnement industriel. Ces travaux répondent à des problématiques de diagnostic énergétique ou de caractérisation d'appareillage haute tension. Le système permet une mesure vectorielle, sans contact des champs rayonnés par les conducteurs afin de s’affranchir de la nécessité d’habilitation électrique (aucune ouverture d’armoire électrique) et surtout sans nécessiter l’interruption de la chaîne de production. Les mesures sont faites en temps réel et permettent d’obtenir des informations sur les tensions, les phases ou encore les positions des conducteurs au sein d’un câble. Deux technologiques différentes sont proposées afin de répondre à cette problématique. La première technologie développée est basée sur l’effet Pockels et amène à la réalisation de sonde électro-optique totalement diélectrique donc non invasive pour la mesure. Cette sonde électro-optique permet, selon la configuration, la mesure des trois composantes du champ électrique. Cette première technologique est utilisée pour les systèmes haute tension. Une deuxième technologie, électrique, permet de répondre aux attentes des industriels en termes de coût et est utilisée pour des applications basse tension, comme le diagnostic électrique des câbles de tension. Un autre aspect a été développé dans le cadre des travaux de thèse afin de proposer une mesure puissancemétrique. Une technologique qui permet la mesure de champs magnétiques pour compléter les informations relatives aux câbles ou équipements industriels a été développé. Cette mesure se fait également sans contact et permet d’obtenir des informations sur le courant et ainsi déduire des informations sur la puissance. Le système électro-optique a permis de caractériser des systèmes haute tension tels que des câbles, des isolateurs ou encore des appareillages de commutation à isolation gazeuse (GIS). Le système électrique (pince puissancemétrique) a permis la caractérisation complète de câble d'énergie: position des conducteurs, tension des conducteurs, courant, phase, détection d'harmoniques ou mesure de décharges partielles. / The aim of this work is to propose the proof of concept, the experimental validation and the realization of electric field measurement system for the characterization of cables (single or multicore) or low frequency voltage equipment in industrial environment. The problematic are the energy diagnostics and high voltage device characterization. The developed system allows a conctact-less vector measurement of the fields radiated by drivers without requiring the interruption of the production chain. The measurements are made in real time and allow to obtain information about the voltage, the phase or the positions of the conductors in a cable. Two different technologies are proposed to address this problem. The first developed technology is based on the Pockels effect and leads to the realization of an electro optic probe totally dielectric and non invasive for the measurement. This electro optic probe allows, depending on the configuration, to measure the three components of the electric field. This technology is used, mainly, for high voltage applications. A second technology, based on electric sensors, is suitable for the industrial's expectations in terms of cost. It is used for low voltage applications such as electric diagnostics voltage cables. A complementary study has been developed to propose a wattmeter clamp. Thus, a technology allowing to measure the magnetic field has been implemented. This development is also contactless and provides information on the current in order deduce information on power. The electro-optical system has allowed characterization of high-voltage systems such as cables, insulators or switchgear gas-insulated (GIS). The electrical system (wattmeter clamp) offers a complete characterization of power cable: position of drivers, voltage drivers, current, phase, harmonic detection or measurement of partial discharge.
32

Sobre a preparação de um sistema para medida do efeito eletro-ótico em cristais e resultados obtidos, para centro \'F\' em alguns halogenetos alcalinos / About the preparation of a system for measuring the electro-optic effect in crystals and obtained results for F-center in some alkali halides

Jorge Feres Kfuri 24 June 1974 (has links)
A montagem de um sistema que permite a detecção de modulação no coeficiente de absorção ótica, devido ao campo elétrico aplicado, foi concluída. A máxima sensibilidade atingida foi de &#916 K / K = 1,5 x 10-6 com resolução em comprimento de onda de 3 nm. O efeito Stark de 2&#170 ordem, na freqüência dupla da do campo elétrico aplicado foi medido para o centro F em KCl e KBr e comparado com provisões teóricas. Os valores obtidos para o KCl coincidem com os de Chiarotti, o que confirma o bom funcionamento do sistema, e diferem dos valores calculados teoricamente. Essa diferença é atribuída à correção do campo local. Os valores obtidos experimentalmente para a variação relativa do coeficiente de absorção foram: para KCl: &#916K / K = 2,93 x 10-5 (78&#176 K) para KBr: &#916K / K = 2,85 x 10-5 (78&#176 K) / The assembly of a system which allows the detection of modulation in the coefficient of optical absorption, due to the applied electrical field, was completed. The maximum sensitivity achieve was &#916 K / K = 1,5 x 10-6, in wave length, of 3 nm. The Stark effect of second order, in the frequency twice as that of the applied electrical field was measured for the center F in KCl and KBr and compared with theoretical previsions. The values obtained for KCl coincide with those of Chiarotti\'s, which confirms the good functioning of the system, and differ from the values calculated theoretically. This difference in ascribed to the correction of the local field. for KCl: &#916K / K = 2,93 x 10-5 (78&#176 K) for KBr: &#916K / K = 2,85 x 10-5 (78&#176 K).
33

Inscription photoréfractive de guides pour la réalisation de composants intégrés reconfigurables / Photonic devices in solitonic waveguides

Alonzo, Massimo 07 May 2010 (has links)
La thèse montre des solutions pour la réalisation de circuits photoniques intégrés utilisant le caractère volumétrique et les très faibles pertes en propagation des solitons spatiaux. On s'intéresse aux éléments de base : interconnexions, sources et router optique (comme dispositif d'élaboration). Interconnexions et sources sont réalisé dans le niobate de lithium (LN) qui fournis des structures avec une très longue durée temporelle. Le fonctionnement d'un router optique est démontré dans le semiconducteur photo-réactif (PR) InP:Fe en raison de sa sensitivité aux longueurs d'onde infrarouges (IR) et à son temps de réponse rapide. On montre que les pertes en propagation dans les interconnexions solitoniques peuvent être réduites à nouveau en utilisant un faisceau en polarisation ordinaire qui augmente la variation d'indice de réfraction induite. La réalisation de sources intégrées solitoniques est étudié pour avoir émission en bleu à 400nm et en IR à 1530nm. Celles en bleu sont obtenues par génération de deuxième harmonique ; le rôle du bleu pour la formation des solitons est montré et ses propriétés physiques étudiées. Celles en IR sont obtenues en dopant le LN avec des ions (actifs) d'erbium. Leurs effets sur les paramètres PR sont présentés et les solitons spatiaux sont obtenus en excitant l'absorption soit du LN soit de l'erbium. L'amplification de la luminescence est étudié numériquement. Le routage optique dans le InP:Fe est obtenu en faisant interagir deux solitons cohérents et en changeant leur phase relative. L'augmentation de la séparation ou leur fusion est analysé en fonction de la distance entre eux, température et intensité de la lumière / Solutions for the realization of integrated photonic circuits with the advantages that spatial solitons offer, like their volumetric nature and the very low propagation losses are shown. Interconnections, sources and optical router (as signal elaboration device) are investigated. Interconnections and sources are experimentally demonstrated in lithium niobate (LN) that provides long-lasting structures thanks to its very long dielectric relaxation time. The optical router working principle is realized in the photorefractive semiconductor InP:Fe because of its sensitivity in infrared radiation and its fast response time. To improve solitonic interconnections, an analysis based on propagation losses in function of light polarization and LN anisotropy is done. The key role played by an ordinary polarized beam on the induced refractive index variation is exploited. Integrated sources in solitonic waveguides for the emission of blue at 400nm and of an infrared beam at 1530nm are investigated. Sources emitting in blue are obtained via a second harmonic generation process ; blue seed role in spatial soliton formation is demonstrated and its physical properties are investigated as well. The infrared one is achieved by doping LN with (active) erbium ions. Their effects on the photorefractive parameters are exploited and spatial solitons realized both pumping direcly erbium absorption lines and the LN ones. Luminescence amplification is studied numerically. Optical routing in InP:Fe is achieved by making two coherent solitons interact by changing their relative phase. Separation increasing or fusion is analyzed in function of mutual distance, temperature and light intensity
34

Broadband IR stokes polarimetry for the electro-optic characterization of cadmium zinc telluride

FitzGerald, William 21 December 2017 (has links)
The infrared portion of the electro-magnetic spectrum is a challenging region in which to perform optical techniques, limited by both device efficiency and availability. In this dissertation, a new optical technique is introduced to facilitate polarization state measurement across the mid-IR. In addition, cadmium zinc telluride (CZT) is investigated as a potential new material suitable for electro-optic devices which function in the mid-IR, while also being characterized by other optical analysis methods. Thin film interference is discussed as it relates to optical techniques and electronic devices. A Stokes polarimeter is used to study the oxide development on the surface of CZT electronic devices, and the effect of natural thin films on substrates used in optical techniques is discussed. In particular, the impact of thin film interference on sum-frequency generation spectroscopy measurements of methyl group orientation are assessed. An FTIR source operated in step-scan mode is used to create a broadband, IR Stokes polarimeter which measures the polarization state of light from 2.5-11 μm simultaneously. Its design, involving two photo-elastic modulators and an analyzer, and theory are described in detail. This instrument is demonstrated by measuring linearly polarized light, and is applied to the measurement of the refractive index dispersion of quartz from 2.5-4 μm, which goes beyond the limits of literature values. Electro-optic crystals of CZT with electrodes of gold and indium are characterized at each wavelength in the mid-IR in terms of their electro-optic effects and apparent depolarization using the Stokes polarimeter. The material displays high-resistivity, allowing it to be operated with up to 5 kV applied DC voltage. The linear electro-optic effect is observed, but overall properties of the samples are found to be heavily dependent on the choice of metal for the electrodes. With a high-work function electrode material in gold, a large depletion region is created when high voltage is applied, which leads to a gradient in electric field throughout the material. This causes a beam of light transmitted through it to experience a distribution of electro-optic behaviours, which leads to overall depolarization of the light. Indium’s work function is lower than gold’s, and is closer to that of CZT. With indium electrodes, the electric field is found to be more consistent, and behaviour is much closer to ideal. The electro-optic effect of CZT is also characterized with AC applied voltage in order to assess its suitability to AC applied voltage applications. The power supply used for this was limited to 60 Hz, which precludes a complete characterization in this regard, but unexpected behaviour was seen. A methodology utilizing an oscilloscope and FTIR was developed in order to more completely understand the material response, and divergent behaviour with positive and negative voltage was found. / Graduate / 2018-12-18
35

Caracterização dielétrica e eletroóptica do copolímero acrílico funcionalizado com o cromóforo 4-[N-etil-N-(2-hidroxietil)]amino-2-cloro-4-nitro-azobenzeno / Dielectric and electro-optic characterization of the acrylic copolymer containing 4-[N-etyl-N-(2-hydroxietil)]amie-2-cloro-4-nitro-azobenzene group

Paulo Antonio Martins Ferreira Ribeiro 04 October 1999 (has links)
Neste trabalho foi investigado o processo de relaxação em copolímeros metacrilicos funcionalizados com o grupo cromóforo 4-[N-etil-N-(2-hidroxietil)]amino-2\'-cloro-4\'nitro-azobenzeno (MMADRI3). Os copolímeros sintetizados foram caracterizados por espectrofotometria de visível e infravermelho, calorimetria diferencial de varredura, análise termogravimétrica e elipsometria. O triodo de corona foi utilizado para induzir a orientação dos cromóforos dipolares a temperaturas próximas da transição vítrea. Os valores do coeficiente eletroóptico linear r13 de filmes obtidos por derramento de solução podem alcançar 14 pm/V em amostras funcionalizadas com 43%de cromóforo.O efeito piezoelétricoé significativo para amostras contendo 4% de cromóforo sendo a sua origem atribuída à carga espacial. A relaxação orientacional dos cromóforos foi estudada medindo-se o decaimento do coeficiente eletroóptico e a relaxação dielétrica a diferentes temperaturas. O processo de relaxação foi interpretado utilizando a equação de Kohlraush-Williams-Watts (KWW) aplicada aos domínios do tempo e da freqüência. O tempo de relaxação característico &#964 e o parâmetro b da equação de KWW foram obtidos como função da temperatura desde a temperatura ambiente até acima da temperatura de transição vítrea. O parâmetro b à temperatura de transição vítrea aproxima-se de 0,6 valor que é atribuído a forças de curto alcance. As medidas dielétricas revelaram duas bandas de relaxação &#946 e &#945 respectivamente a baixas e a altas temperaturas. A relaxação a está relacionada com a transição vítrea e à desorientação dos cromóforos. A dependência de &#964 foi fundamentada nas equações de Arrhenius e de Vogel-Fulcher-Tarmnann-Hesse (VFTH), respectivamente a baixas e a altas temperaturas. Os parâmetros de VFTH encontram-se próximos dos considerados universais. O comportamento de &#964 em toda a gama de temperaturas, foi explicado pela equação de Adam-Gibbs, usando-se os parâmetros de VFTH. O resfriamento a taxas lentas após o processo de polarização aumenta substancialmente o tempo de relaxação e a sua energia de ativação. Os expoentes m e n do modelo de Dissado-Hill baseado na interação de multicorpos foram obtidos em função da temperatura. Os valores do parâmetro n ficam dentro do esperado pela teoria / The relaxation process of side-chain methacrylate copolymers functionalized with the nonlinear optical azo chromophore 4-[Nethyl-N-(2-hydroxyethyl)]-amino-2\'-chloro-4-nitroazobenzene (MMADR13) was investigated. The copolymers synthesized were characterized by visible and infrared spectrophotometry, differential scanning calorimetry, thermogravimetric analysis and ellipsometry. The corona triode was employed to induce the orientation of the dipolar chromophore at a temperature near the glass transition. The linear eletrooptic coefficient r13 of cast fllms can reach values as high as 14 pm/V in samples with 43% of chromophore contento The piezoeletric effect attributed to space charge was only significant in the lowest chromophore content samples (4%). Electrostriction was shown to affect to some extent the quadratic electrooptic measurements. The chromophore relaxation at different temperatures was investigated by both electrooptic decay and dielectric measurements. The relaxation process was interpreted using the Kohlraush-Williams-Watts (KWW) equation both in the time and frequency domains. From the KWW equation the characteristic relaxation time &#964 and the stretching parameter b were obtained from room temperature to temperatures above the glass transition. Near the glass transition b is ca 0.6 which is characteristic of short range interactions. Dielectric measurements revealed two relaxation bands, &#946 and &#945, at low and high temperatures, respectively. The &#945 relaxation was attributed to the glass transition and to the 10ss of chromophore orientational order. The temperature behavior of &#964 was interpreted by the Arrhenius and Vogel-Fulcher-Tammann-Hesse (VFTH) equations. at low and high temperatures. respectivelly. The VFTH parameters lie close to the so-called universal values. In addition the overall temperature dependence was explained by the Adam-Gibbs equation using the VFTH parameters. Using a small cooling rate after corona poling increases substantially the relaxation time and the activation energy .The power law exponents m and n. from Dissado-Hill manybody interactions model were obtained as a function of temperature. The n values are in the range of expected values for the many-body interactions model
36

Towards Compact and High Speed Silicon Modulators

Brimont ., Antoine Christian Jacques 12 January 2012 (has links)
Los moduladores son elementos claves para la transmisión de la señal y el procesamiento de la información. Las técnicas de fabricación avanzadas "complementary metal-oxide semiconductor" (CMOS) permiten reducir drásticamente las dimensiones de estos dispositivos de interés para la implementación a gran escala en un chip de silicito a bajo coste. El trabajo realizado en esta tesis se centra en el diseño, la fabricación y la caracterización de estructuras de onda lenta con el objetivo de realizar moduladores compactos y eficientes integrados en un chip de silicio. El trabajo se divide en cuatro capítulos y un capítulo de conclusión y perspectivas. El capítulo uno introduce los fundamentos de física del estado sólido y de los mecanismos básicos de propagación guiada de la luz por reflexión total interna. El capítulo dos presenta los parámetros importantes de los moduladroes electro-ópticos así como un trabajo de recopilación de todos los mecanismos físicos que pueden ser empleados para modular la luz en silicio. Además, se presenta el estado del arte de los moduladores basados en silicio. El capítulo tres presenta el diseño , fabricación y caracterización de un modulador electro-óptico en silicio compacto y eficiente basado en el efecto de onda lenta en una estructura periódica unidimensional integrada, cuya geometría, similar a la de una red de Bragg, permite reducir la velocidad de grupo de un paquetes de ondas. Dicho efecto, se emplea para incrementar la interacción luz-materia y por lo tanto la eficiencia del modulador electro-óptico. El capítulo cuatro demuestra experimentalmente que dicha guía unidimensional periódica puede ser mejorada a fin de conseguir que el efecto de baja velocidad de grupo suceda en un rango mayor de longitudes de onda para posibles aplicaciones como la multiplexación por división de longitudinal de onda. En el capítulo cinco, se proporcionan conclusiones y perspectivas sobre el trabajo realizado. / Brimont ., ACJ. (2011). Towards Compact and High Speed Silicon Modulators [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/14345 / Palancia
37

Development of integrated silicon photonics modulation devices for digital and analog applications

Gutiérrez Campo, Ana María 08 November 2013 (has links)
Silicon photonics is one of the most exciting and fastest growing photonic technologies in recent years. The salient feature of this technology is its compatibility with the mature silicon IC manufacturing based on complementary metal-oxide semiconductor (CMOS) processes widely used in microelectronic industry. Another motivation is the availability of high-quality silicon-on-insulator (SOI) planar waveguide circuits that offer strong optical confinement due to the high index contrast between silicon (n=3.45) and SiO2 (n=1.45). This opens up miniaturization and very large scale integration of photonic devices allowing photonic integrated circuits for a wide range of applications and markets, from optical telecommunications to bio-photonic devices or precise fibre sensors. Optical modulators are key building-blocks for high speed signal transmission and information processing in any photonic interconnection solution. The work developed in this thesis, as part of the objectives of the European project HELIOS in which it is framed, is essentially focused on realizing compact and efficient modulators integrated on silicon chips. The thesis consists of three main chapters as well as the concluding section on the work accomplished. Chapter one is aimed at giving a general description of the benefits of using silicon photonics, showing its challenges and opportunities as well as at giving a deeply overview of all issues related to the electro-optic modulation. Chapter two is devoted to develop silicon modulators with high features for digital applications. Specifically, new optical structures different to the conventional ones are presented with the aim of enhancing the modulation performance or at least several critical parameters in the modulation. Chapter three is dedicated to the analog applications. The concept of microwave photonics is described as well as different researches carried out in the analog scope for application in the field of integrated microwave photonics, all of them using CMOS-compatible electro-optic silicon modulators which validate the potential of silicon photonics as a promising approach for enabling the development of integrated microwave photonics applications. Finally, conclusions on the work realized are provided in Chapter 4. / La fotónica de silicio es una de las tecnologías fotónicas que está experimentando un crecimiento más excitante y rápido en los últimos años. La característica más destacada de esta tecnología es su compatibilidad con las maduras técnicas de fabricación de circuitos integrados de silicio basadas en los procesos ¿complementary metal-oxide semiconductor¿ (CMOS) ampliamente utilizados en la industria microelectrónica. Otra motivación es la disponibilidad de circuitos de guía de ondas planas de silicio sobre aislante (SOI) de alta calidad que ofrecen un fuerte confinamiento óptico debido al alto contraste índices entre el silicio (n=3,45) y el SiO2 (n = 1,45). Esto abre las puertas a la miniaturización y a la integración a gran escala de dispositivos fotónicos lo que resulta en circuitos fotónicos integrados para una amplia gama de aplicaciones y mercados, desde telecomunicaciones ópticas a dispositivos bio-fotónicos o sensores de fibra precisos. Los moduladores ópticos son elementos básicos fundamentales para la transmisión de señales a alta velocidad y el procesado de información en cualquier solución de interconexión fotónica. El trabajo desarrollado en esta tesis, como parte del los objetivos del proyecto Europeo HELIOS en el que está enmarcada, se centra fundamentalmente en realizar moduladores compactos y eficientes, integrados en chips de silicio. La tesis consiste en 3 capítulos principales así como una sección de conclusiones del trabajo conseguido. El capítulo uno está destinado a dar una descripción general de los beneficios del uso de la fotónica de silicio, mostrando sus retos y oportunidades, así como a dar una visión profunda de todos los aspectos relacionados con la modulación electro-óptica. El capítulo dos está dedicado a desarrollar moduladores de silicio de altas prestaciones para aplicaciones digitales. Específicamente, se presentan nuevas estructuras ópticas diferentes a las convencionales con el objetivo de mejorar el rendimiento de la modulación o al menos algunos parámetros críticos en la modulación. El tercer capítulo se dedica a las aplicaciones analógicas. Se describe el concepto de la fotónica de microondas, así como diferentes investigaciones llevadas a cabo en el ámbito analógico para su aplicación en el campo de la fotónica integrada de microondas, todas ellas usando moduladores electro-ópticos de silicio compatibles con los procesos de fabricación CMOS, lo que valida el potencial de la fotónica de silicio como un prometedor enfoque para permitir el desarrollo de aplicaciones de la fotónica integrada de microondas. Por último, las conclusiones sobre el trabajo realizado se proporcionan en el Capítulo 4. / Gutiérrez Campo, AM. (2013). Development of integrated silicon photonics modulation devices for digital and analog applications [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/33330 / TESIS
38

Low Loss Hybrid Waveguide Electric Field Sensor Based on Optical D-fiber

Johnson, Eric K. 26 November 2007 (has links) (PDF)
This thesis presents the fabrication of a low loss hybrid waveguide electric field(E-field) sensor based on optical D-fiber. This novel E-field sensor is formed as part of a contiguous fiber resulting in a flexible and small cross-section device that can be embedded into electronic circuitry. The in-fiber nature of this sensor also eliminates the need for alignment and packaging that conventional sensors need. An optical fiber can detect electric fields when the core of the fiber is partially removed and replaced with an electro-optic polymer. This polymer causes a change in the index of refraction in the waveguide of the device when in the presence of an electric field. The change in the effective index of refraction changes the speed of the light in the vertical axis relative to the light in the horizontal axis creating a phase change between the two axes. This phase change can be detected as a change in the polarity of the light coming out of the fiber. The sensor is formed by partially etching out the core of a D-shaped optical fiber and depositing a polymer to form a hybrid waveguide. The polymer becomes sensitive to electric fields through corona poling. The typical corona poling process is not amenable to poling a polymer located in the fiber core. A method of poling conducive to an in-fiber device was developed and demonstrated. Using PMMA and DR1 for proof of concept, the operation of the first in-fiber hybrid waveguide electric field sensor is demonstrated. Etch depth, polymer composition, and polymer spin rate are optimized to provide strong interaction between the light and the sensing portion of the hybrid waveguide while maintaining low optical loss. High frequency testing was demonstrated to show that the effect is electro-optic. AC testing also allows the Epi of the sensors to be determined at lower electric fields than are required for DC testing, eliminating charge build up and electric field break down issues.
39

Application Improvements of Slab-Coupled Optical Fiber Sensors

Chadderdon, Spencer L. 17 March 2014 (has links) (PDF)
This dissertation explores techniques for improving slab-coupled optical fiber sensor (SCOS) technology for use in specific applications and sensing configurations. SCOS are advantageous for their small size and all-dielectric composition which permit non-intrusive measurement of electric fields within compact environments; however, their small size also limits their sensitivity. This work performs a thorough analysis of the factors contributing to the performance of SCOS and demonstrates methods which improve SCOS, while maintaining its small dimensions and high level of directional sensitivity. These improvements include increasing the sensitivity by 9x, improving the frequency response to include sub 300 kHz frequencies, and developing a method to tune the resonances. The analysis shows that the best material for the slab waveguide is an electro-optic polymer because of its low RF permittivity combined with high electro-optic coefficient. Additional improvements are based on changing the crystal orientation to a transverse configuration, which enhances the sensitivity due to a combined increase in the effective electro-optic coefficient and electric field penetration into the slab. The transverse SCOS configuration not only improves the overall sensitivity but increases the directional sensitivity of the SCOS. Lithium niobate and electro-optic polymer are both experimentally shown to exhibit minimal frequency dependent sensitivity making them suitable for broad frequency applications. Simultaneous interrogation of multiple SCOS with a single tunable laser is achieved by tuning the resonant wavelengths of KTP SCOS so their resonances overlap.
40

Design and Analysis of a Poled-Polymer Electro-Optic Modulator with a Strip-Loaded Waveguide Structure

Davis, Antonio A. January 2010 (has links)
No description available.

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