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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
21

Statistical analysis of electromigration lifetimes and void evolution in Cu interconnects

Hauschildt, Meike. Ho, P. S. January 2005 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2005. / Supervisor: Paul S. Ho. Vita. Includes bibliographical references.
22

Investigation of electromigration reliability of solder joint in flip-chip packages

Ding, Min, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.
23

Eletrodifusão, absorção óptica e termoluminescência no quartzo e berilo / Electrodiffusion, optical absorption and thermoluminescence of quartz and beryl

Yukimitu, Keizo 16 December 1993 (has links)
No presente trabalho, foi montado um sistema de eletrodifusão para o estudo dos efeitos da substituição de íons alcalinos, presentes no canal estrutural, por íons de hidrogênio (H POT. +), nas propriedades termoluminescentes e ópticas do quartzo. A corrente elétrica de eletrólise apresenta, na parte inicial de aquecimento, um ombro ou pico de corrente. Através da análise do comportamento deste pico e informações obtidas de dados de absorção óptica na região espectral do infravermelho, concluiu-se que o pico presente na curva inicial de eletrólise se deve ao complexo [AL POT. 3+/M POT. +]. As medidas de termoluminescência e absorção óptica na região espectral do visível e ultra-violeta foram feitas em amostras de quartzo eletrodifundidos e não eletrodifundidos e chegou-se à proposição de uma reação envolvendo os alcalinos presentes no canal. Nesta reação, os íons alcalinos fazem o papel de centros armadilhadores de íons de oxigênio O POT. produzidos pela radiação ionizante, e estabilizadores de vacâncias de oxigênio. O aquecimento, em tomo de 300 GRAUS C, provoca a desestabilização desses centros armadilhadores, liberando os íons alcalinos que reagem com os defeitos [ALO IND. 4] POT. 0 emitindo luz TL. Aproveitando a existência de canais estruturais, semelhantes ao quartzo, tentou-se eletrodifundir H POT + no berilo. Através de medidas de termoluminescência e corrente inicial de eletrólise, discute-se a possibilidade da existência do defeito [FE POT. 3+/M POT. +] no berilo. / A system of electrodiffusion was made in the laboratory to investigate effects of exchanging alkali ions, usually present in the structural channels by protons, in the optical and thermoluminescent properties of quartz. In the initial part of heating, the sweeping current presents a peak at about 350 GRAUS C. The analysis of the behaviour of this peak with additional data of optical absorption in the region of infrared, it was concluded that the peak at 350 GRAUS C of the current is due to [AL POT. 3+/M POT. +] system. Thermoluminescence and optical absorption spectra in the visible and ultraviolet light region for swept and unswept quartz were compared. Based on this comparison it was shown that, once irradiated to gama- or X-rays, alkali ions are removed from [AL POT. 3+/ M POT. +] and either couple to o ions or capture electron and become interstitial alkali atom, leaving, further, [ALO IND. 4] POT. 0 hole center. Heating at about 300 GRAUS C electrons from M POT 0 or M POT +O POT recombine with holes in [ALO IND. 4] POT. 0, emitting TL light, besides regrouping Al POT. 3+ and M POT. + to reform [Al POT. 3+/M POT. +] system by coulomb attraction. The electrodiffusion experiment was extended to beryl crystal, because beryl has also structural channels. To explain initial sweeping current behaviour as well as thermoluminescent property a mechanism involving [FE POT. 3+/M POT. +] system is proposed.
24

Statistical analysis of electromigration lifetimes and void evolution in Cu interconnects

Hauschildt, Meike 28 August 2008 (has links)
Not available / text
25

Study of stress relaxation and electromigration in Cu/low-k interconnects

Yoon, Sean Jhin 28 August 2008 (has links)
Not available / text
26

Optimal signal, power, clock and thermal interconnect networks for high-performance 2d and 3d integrated circuits

Sekar, Deepak Chandra 20 August 2008 (has links)
A high-performance 2D or 3D integrated circuit typically has (i) ratio of delay of a 1mm wire to delay of a nMOS transistor > 500, (ii) target impedence of power delivery network < 1mΩ, (iii) clock frequency > 2GHz, and (iv) thermal resistance requirement of heat removal path < 0.6 degree C/W. This data illustrates the difficulty of obtaining high-quality signal, power, clock and thermal interconnect networks for gigascale 2D and 3D integrated circuits. Specific material, process, circuit, packaging, and architecture solutions to enhance these four types of interconnect networks are proposed and quantitatively evaluated. A microchannel-cooled 3D integrated circuit technology is developed to deal with thermal interconnect problems inherent to stacked dice. The benefits of carbon nanotube technology, improved repeater insertion techniques and parallel processing architectures for signal interconnect networks are evaluated. A circuit technique to periodically reverse current direction in power interconnect networks is proposed. It provides several orders of magnitude improvement in electromigration lifetimes. Methods to control power supply noise and reduce its impact on clock interconnect networks are investigated. Finally, a CAD tool to co-design signal, power, clock and thermal interconnect networks in high-performance 2D and 3D integrated circuits is developed.
27

The diffusion and solution of hydrogen isotopes in solids and the development of a hydrogen permeation barrier.

Riehm, Marc Philip. Smeltzer, W.W. Thompson, D.A. Davies, J.A. Unknown Date (has links)
Thesis (Ph.D.)--McMaster University (Canada), 1990. / Source: Dissertation Abstracts International, Volume: 52-10, Section: B, page: 5510. Supervisors: D. A. Thompson; W. W. Smeltzer; J. A. Davies.
28

Study of stress relaxation and electromigration in Cu/low-k interconnects

Yoon, Sean Jhin, January 1900 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2005. / Vita. Includes bibliographical references.
29

Scaling and process effect on electromigration reliability for Cu/low k interconnects

Pyun, Jung Woo, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.
30

An experimental study of electromigration in flip chip packages

Selvaraj, Mukesh K. January 2007 (has links)
Thesis (Ph. D.)--State University of New York at Binghamton, Thomas J. Watson School of Engineering and Applied Science, Department of Systems Science and Industrial Engineering, 2007. / Includes bibliographical references.

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