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Z1 Dependence of Ion-Induced Electron EmissionArrale, Abdikarim M. (Abdikarim Mohamed) 12 1900 (has links)
Knowledge of the atomic number (Zt) dependence of ion-induced electron emission yields (Y) can be the basis for a general understanding of ion-atom interaction phenomena and, in particular, for the design of Zrsensitive detectors that could be useful, for example, in the separation of isobars in accelerator mass spectrometry. The Zx dependence of ion-induced electron emission yields has been investigated using heavy ions of identical velocity (v = 2 v0, with v0 as the Bohr velocity) incident in a normal direction on sputter-cleaned carbon foils. Yields measured in this work plotted as a function of the ion's atomic number reveal an oscillatory behavior with pronounced maxima and minima. This nonmonotonic dependence of the yield on Zx will be discussed in the light of existing theories.
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Surface mapping based on the correlated emission of ions and electrons from hypervelocity C60 impactsEller, Michael 14 March 2013 (has links)
High resolution mapping of molecular species, specifically sub-micrometer spatial resolution mapping, is at the forefront of recent interest in Secondary Ion Mass Spectrometry (SIMS). Large projectiles, e.g. C60, Au400, display high quasi-molecular ion yields with reduced fragment ion yields compared to atomic or polyatomic projectiles. However, the application of large projectiles in a sub-micrometer beam is hampered by limitations in source brightness and angular emission characteristics which are incompatible with tight focusing. An alternate approach to a focused beam is to reduce the beam intensity to less than 1000 impacts per second (referred to as the event-by-event mode) and localize each projectile impact via an electron emission microscope. The characterization and performance of such an instrument for localizing individual projectile impacts of 15-75keV C60 with sub-micrometer spatial resolution are described here.
The quest for localizing single cluster impacts requires an understanding of the relationship between SI and electron emissions. It was found that electron emission is observed independently of the number or type of secondary ion emitted for flat homogeneous samples. The independence of ion and electron emission confirms the rationale for using the emitted electrons to localize individual projectile impacts. Further investigation of electron emission revealed that the electron yield is characteristic of the class of sample investigated (e.g. metal, organic, semiconductor). The electron yield was found to depend on the size and topology of the sample. Additionally, the electron yield increases with increasing projectile velocity.
The use of the novel instrumentation presented here, necessitated the development of custom acquisition and analysis software. The analysis of co-emitted species from nano-metric dimensions is enhanced with the ability to perform multiple coincidence/anti-coincidence calculations. New concepts were implemented for integrating localization and mass spectrometry via software solutions for image analysis and localization and subsequently correlation between emitted ions and electrons. The result is software and instrumentation capable of generating ion maps with sub-micrometer spatial resolution.
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Influence of Surface Charges on Impulse Flashover Characteristics of Alumina Dielectrics in VacuumTsuchiya, Kenji, Okubo, Hitoshi, Ishida, Tsugunari, Kato, Hidenori, Kato, Katsumi 28 December 2009 (has links)
No description available.
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Wechselwirkung langsamer hochgeladener Ionen mit der Oberfläche von IonenkristallenHeller, R. 31 March 2010 (has links) (PDF)
In dieser Arbeit wird die Erzeugung permanenter Nanostrukturen durch den Beschuss mit langsamen (v < 5x105m/s) hochgeladenen (q < 40) Ionen auf den Oberflächen der Ionenkristalle CaF2 sowie KBr untersucht. Die systematische Analyse der Probenoberfläche mittels Raster-Kraft-Mikroskopie liefert detaillierte Informationen über den Einfluss von potentieller und kinetischer Projektilenergie auf den Prozess der Strukturerzeugung. Der individuelle Einfall hochgeladener Ionen auf der KBr(001)-Oberfläche kann die Erzeugung monoatomar tiefer, lochartiger Strukturen -Nanopits- mit einer lateralen Ausdehnung von wenigen 10nm initiieren. Das Volumen dieser Löcher und damit die Anzahl gesputterter Sekundärteilchen zeigt eine lineare Abhängigkeit von der potentiellen Energie der Projektile. Für das Einsetzen der Locherzeugung konnte ein von der Projektilgeschwindigkeit abhängiger Grenzwert der potentiellen Energie E_grenz^pot (Ekin) gefunden werden. Auf der Basis der defekt-induzierten Desorption durch Elektronen wurde unter Einbeziehung von Effekten der Defektagglomeration ein konsistentes mikroskopisches Modell für den Prozess der Locherzeugung konzipiert. Für die CaF2(111)-Oberfläche kann die aus jüngsten Studien bekannte, individuelle Erzeugung hügelartiger Nanostrukturen -Nanohillocks- durch hochgeladene Ionen in dieser Arbeit auch für kleinste kinetische Energien (E_kin < 150eVxq) verifiziert werden. Die potentielle Energie der einfallenden Ionen wird damit erstmalig zweifelsfrei als alleinige Ursache der Nanostrukturerzeugung identifiziert. Zudem zeigt sich bei geringer Projektilgeschwindigkeit eine Verschiebung der potentiellen Grenzenergie zur Hillock-Erzeugung. Im Rahmen einer Kooperation an der Technischen Universität Wien durchgeführte Simulationsrechnungen auf der Grundlage des inelastischen thermal spike-Modells zeigen, dass die individuelle Hillock-Erzeugung durch hochgeladene Ionen mit einer lokalen Schmelze des Ionenkristalls verknüpft werden kann. Dem essentiellen Einfluss der Elektronenemission während der Wechselwirkung des hochgeladenen Ions mit der Oberfläche auf den Prozess der Nanostrukturerzeugung wird in komplementären Untersuchungen zur Sekundärelektronenstatistik Rechnung getragen. Erstmalig werden dabei Gesamtelektronenausbeuten für Isolatoroberflächen bei kleinsten Projektilgeschwindigkeiten (v < 1x10^5 m/s) bestimmt. Für Geschwindigkeiten v < 5x10^4 m/s findet sich für die Isolatoroberfläche in starkem Kontrast zu Metallen ein signifikanter Abfall der Elektronenausbeute mit sinkender kinetischer Energie. Mögliche Ursachen dieses Effektes werden auf der Grundlage unterschiedlicher Modelle diskutiert.
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Interaction cross sections needed for simulation of secondary electron emission spectra from thin metal foils after fast proton impactTravia, Anderson. Dingfelder, Michael. January 2009 (has links)
Thesis (M.S.)--East Carolina University, 2009. / Presented to the faculty of the Department of Physics. Advisor: Michael Dingfelder. Title from PDF t.p. (viewed Apr. 23, 2010). Includes bibliographical references.
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Electron field emission from amorphous semiconductor thin filmsForrest, Roy Duncan January 2000 (has links)
No description available.
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Electron Emission from Ferroelectric Thin Films and Single CrystalsBecherer, Jana 12 December 2012 (has links) (PDF)
Electron emission from ferroelectrics (FEE) is a promising source for electrons. Although extensive studies have shown that the emission is inititated by a variation of the spontaneous polarization, the exact underlying emission process remained unclear to date. The focus of this work is to analyze and improve the electron emission process from ferroelectric materials. To achieve low operation voltages thin films and low coercive voltage ferroelectric relaxor single crystals were used. The emission was measured under ultrahigh vacuum (UHV) conditions with a single electron detector. The ferroelectric thin films were prepared with a structured top electrode, with nanometer-sized regularly arranged apertures. The emission from lead zirconate titanate (PZT) thin films was achieved at excitation voltages as low as 10 V. The voltage dependent polarization state within the emission apertures of PZT was imaged using piezoresponse force microscopy (PFM). The PFM measurements revealed that an increased fraction of the free surface area is switched by an increased applied voltage. Additional, as a thin film electron emitter, bismuth ferrite (BFO) films were investigated. Ferroelectric relaxor lead magnesium niobate - lead titanate (PMN-PT) was used as single crystal electron emitter due to its low coercive field. The time-dependent electron emission process from PMN-PT was clarified with the help of exciting voltage pulses of variable duration. It is demonstrated that FEE from PMN-PT can be described in the framework of a random field model for relaxors, with the measured electron flux correlating with the amount of reversed polarization. The time-resolved analysis gives insight into the polarization switching and screening processes within PMN-PT. The local electron emission from PMN-PT single crystals has been investigated, in the nanometer regime, with the help of an AFM tip serving as an electron detector. Additionally, the influence of the aperture size in the top electrode on the emission has been investigated. It is found that the electron emission is strongly influenced by the electric field distribution in the aperture. An optimum aperture width for electron emission from PMN-PT, which is much smaller than the apertures used so far, was found. Comparative investigations of the electron emission process from relaxors with barium titanate showed that the emission from PMN-PT is much more complex than the emission from a conventional ferroelectric.
General conclusions on the future applications of FEE can be drawn.
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Computer simulation of a capacitively coupled GEC cellCosta i Bricha, Elm January 2001 (has links)
No description available.
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Contribution à l'étude de l'émission électronique sous impact d'électrons de basse énergie (<=1keV) : application à l'aluminium / Contribution to the study of electron emission under electron impact of low energy (<=1keV) : application to aluminumRoupie, Julien 18 February 2013 (has links)
Le phénomène d’émission électronique sous impact d’électrons, bien que très étudié, est mal connue à très basse énergie (<100 eV). Un domaine d’énergie où ce phénomène est un paramètre fondamental de technologies dans le domaine spatial comme les guides d’onde radiofréquence sous vide. Afin de lieux comprendre ce phénomène à cette gamme d’énergie,une étude théorique a été entreprise par le biais d’une simulation Monte-Carlo de l’émission électronique à très base énergie. Après identification des interactions mises en jeu, nous avons sélectionné pour chaque interaction le ou les modèles existants les plus appropriés tout en leur apportant des modifications à chaque fois que cela était nécessaire. Certains modèles trouvés dans la littérature ont été utilisés pour la première fois dans le domaine de l’émission électronique. Notre approche a été appliquée à l’aluminium et a été validée expérimentalement lorsque les données existaient. L’allure de la courbe de rendement communément admise à ce jour a été contredite et expliquée par la faible probabilité d’échappement des électrons de très basse énergie, ainsi que par un traitement plus rigoureux de la réflexion des électrons de très basse énergie qui impactent le matériau. De surcroit, la simulation donne accès pour la première fois à un rendement à très basse énergie qui présente des oscillations que l’on retrouve dans les rares données expérimentales disponibles. Ces oscillations sont attribuées à l’interaction de l’électron avec les plasmons. Les simulations ont montré l’importance de la population d’électrons rétrodiffusés à très basse énergie. / Although extensively studied, the phenomenon of electron emission under electron impact is not very well known at very low energy (<100 eV). An energy range where this phenomenon is a fundamental parameter in space technologies such as radiofrequency waveguide in vacuum. In order to provide a better understanding of the phenomenon, in this energy range, a theoretical study through Monte Carlo simulation of electron emission at very low energyhave been undertaken. After identification of the involved interactions, we selected for each interaction the most appropriate existing models while providing modifications whenever necessary. Somme models found in the literature were used for the first time in the field ofelectron emission. Our approach has been applied to aluminum and has been validated experimentally when data existed. The commonly accepted shape of the yield curve has benne contradicted and explained by the low escape probability of very low energy electrons, as well as by a more rigorous treatment of the reflection of very low energy electrons that impact thematerial. In addition, the simulation provides, for the first time, access to a yield curve at very low energy presenting oscillations also found in the few available experimental data. These oscillations are attributed to the interaction of the electrons with the plasmons. Simulations showed the importance of the backscattered electrons population ate very low energy.
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Investigation and optimisation of a plasma cathode electron beam gun for material processing applicationsDel Pozo Rodriguez, Sofia January 2016 (has links)
This thesis describes design, development and testing work on a plasma cathode electron beam gun as well as plasma diagnosis experiments and Electron Beam (EB) current measurements carried out with the aim of maximising the power of the EB extracted and optimising the electron beam gun system for material processing applications. The elements which influence EB gun design are described and put into practice in a thermionic EB gun case study. The relevant principles of plasma EB gun systems, such low-temperature, low-pressure, RF excitation, are described along with the test rigs developed to investigate different plasma cathode configurations. The first experimental setup was for optical spectroscopy measurements of the light emitted from the plasma and the second included current measurements from EBs generated at –30 and –60 kV as well as the spectroscopic measurements. Comparison of EB current measurements with different plasma cathode configurations and correlation with spectroscopic measurements are presented. The maximum current extracted from the Radiofrequency (RF) gun was 38 mA at –60 kV using a hollow cathode geometry and permanent magnets for electron confinement. The RF gun was compared to a Direct Current (DC) gun which generated higher currents. This was reflected in the spectra which indicated a higher ionisation level than in the RF plasma. Simulation work carried out using Opera-2d to model beam trajectories indicated that the beam shape is largely influenced by the plasma boundary. Particle In Cell (PIC) simulations of a parallel plate RF plasma cathode demonstrated that higher excitation frequencies produced higher ionisation, however the RF sheaths were larger and thus the current extracted may be limited in practice due to fewer electrons being available near the aperture. The sheath thickness decreased in the simulations as the discharge gap was increased. RF plasma also produced larger currents from larger plasma chambers.
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