R.H. Kingston. / "May 10, 1951." "This report is essentially the same as a doctoral thesis in the Department of Physics, M.I.T." / Bibliography: p. 26-30. / Army Signal Corps Contract No. DA36-039 sc-100 Project No. 8-102B-0. Dept. of the Army Project No. 3-99-10-022.

A series of experiments have been performed to understand fast electron generation from ultra intense laser-solid interaction, and their transports through a cold material. Using Micro-Electro-Mechanical Systems (MEMS), we contrived various shape of cone and wedge targets. The first set of experiment was for investigating hot electron generations by measuring x-ray production in different energy ranges. K[alpha] and hard x-ray yields were compared when the laser was focused into pyramidal shaped cone targets and wedge shaped targets. Hot electron production is highest in the wedge targets irradiated with transverse polarization, though K[alpha] is maximized with wedge targets and parallel polarization. These results are explained with particle-in-cell (PIC) simulations utilizing PICLS and OOPIC codes. We also investigate hot electron transport in foil, wedge, and cone targets by observing the transition radiation emitted from the targets rear side along with bremsstrahlung x-ray measurement. Twodimensional images and spectra of 800 nm coherent transition radiation (CTR) along with ballistic electron transport analysis have revealed the spatial, temporal, and temperature characteristics of hot electron micro-pulses. Various patterns from different target-laser configurations suggest that hot electrons were guided by the strong static electromagnetic fields at the target boundary. Evidence about fast electron guiding in the cone is also observed. CTR at 400 nm showed that two distinct beams of MeV electrons are emitted from the target rear side at the same time. This measurement indicates that two different mechanisms, namely resonance absorption and j x B heating, create two populations of electrons at the targets front side and drive them to different directions, with distinct temperatures and temporal characteristics. This interpretation is consistent with the results from 3D-PIC code Virtual Laser Plasma Laboratory (VLPL). / text

Thesis (MSc)--University of Stellenbosch, 2000. / ENGLISH ABSTRACT: The Auger electron emitter iodine-123 was examined in the form of 4- [12311iodoantipyrineand as [12311Nal for its effectiveness in killing cells of different sensitivity to photon irradiation. Micronucleus assays showed that 4- [12311iodoantipyrineis two to three times more effective in cell inactivation than C2311Nai.This can be attributed to the fact that antipyrine, for reason of its lipid solubility, can enter cells and can reach the cell nucleus, whereas C231]Nai is excluded from the cytoplasm. The differential targeting of intra- and extracellular compartments was confirmed by radionuclide uptake experiments. In the nucleus, Auger decay conceivably is located on the DNA where it may invoke high-LET irradiation damage. Irradiation damage by [12311Naisl by long range y-irradiation and hence low-LET. Results of the present study demonstrate however that the enhancement of MN-frequency seen with 4-[123I]iodoantipyrine over [12311Nalis similar for all cell lines and that the narrowing of MN-response expected for 4- [12311iodoantipyrinedoes not occur. Experiments with the free radical scavenger, DMSO, indicated nearly identical dose reduction factors for both iodine-123 carriers. These two observations strongly suggest that the cell inactivation by 4- [12311iodoantipyrine is not by high-LET direct ionisation of DNA, but due to an indirect effect. The indirect radiation effect of Auger decay in the nucleus is attributed to shielding of DNA by histones. Such a protection mechanism is not unrealistic if it is realised that histones and DNA associate in a 1: 1 weight ratio and that higher order folding of the nucleosome chain into solenoids, loops, and chromatids generates considerable protein density. In the nucleosome core, the histone acta mer measures 7 nm and closely approximates the 10 nm dimention of the Auger electron range. It is suggested that the interlacing of protein density with DNA density suppresses direct ionisation from Auger decay at the DNA and directs the majority of Auger decay to the histones. / AFRIKAANSE OPSOMMING: Die Auger-elektron-uitstraler, jodium-123, is ondersoek in die vorm van 4- [123l]jodoantipirien en [12311Nal om die effektiwiteit te bepaal waarmee dit selle met verskillende grade van sensitiwiteit vir fotonbestraling doodmaak. Mikrokerntellings toon aan dat 4-[123I]jodoantipirien selle twee tot drie maal meer effektief inaktiveer as [12311Nal.Dit kan toegeskryf word aan die feit dat antipirien, as gevolg van sy vetoplosbaarheidseienskappe, die selle kan binnedring en die kern bereik, teenoor [12311Nalwat uitgesluit word uit die sitoplasma. Die differensiële blootstelling van intra- en ekstrasellulere gebiede is bevestig deur radionukliedopname eksperimente. In die selkern vind Auger verval waarskynlik by die DNA plaas waar dit hoë-LET stralingskade veroorsaak. Stralingskade afkomstig van [1231]Nalis deur langafstand y-strale en dus lae-LET. Die resultate van die huidige studie bewys egter dat die verhoogde mikrokernfrekwensie van 4-[12311jodoantipirienteenoor [1231]Nal dieselfde is vir al die sellyne en dat die vernouïng van mikrokernreaksie soos verwag met 4- [12311jodoantipirien, nie plaasvind nie. Eksperimente met die vryradikaalopruimer, DMSO, dui op feitlik identiese dosis-modifiseringsfaktore vir beide jodium-123 draers. Hierdie twee waarnemings is 'n besliste aanduiding dat die selinaktivering deur 4-[12311jodoantipiriennie deur hoë-LET direkte ionisering van DNA plaasvind nie, maar eerder deur indirekte stralingsaksie. Die indirekte stralingseffek van Augerverval in die kern kan toegeskryf word aan afskerming van DNA deur histone. So 'n beskermingsmeganisme is nie onrealisties nie, as in ag geneem word dat histone en DNA in 'n 1: 1 gewigsverhouding assosieer en dat hoër orde vouïng van die nukleosoomketting tot solenoïede, lusse en chromatiede 'n beduidende protïendigtheid genereer. In die nukleosoomkern is die histoon-oktameer ongeveer 7 nm in deursnit en dus vergelykbaar met die 10 nm reikafstand van die Auger elektrone. Dit word voorgestel dat die ineengeweefdheid van die protien-digtheid met die DNA-digtheid die direkte ionisering van die DNA tydens Auger verval onderdruk en dat die meeste van die Auger verval in die histone plaasvind.

The work function of hydrogen-terminated, polycrystalline diamond was studied using ultraviolet photoelectron spectroscopy. Polycrystalline diamond films were deposited onto molybdenum substrates by electrophoresis for grain sizes ranging from 0.3 to 108 microns. The work function and electron affinity were measured using 21.2 eV photons from a helium plasma source. The films were characterized by x-ray photoelectron spectroscopy to determine elemental composition and the sp2/sp3 carbon fraction. The percentage of (111) diamond was determined by x-ray diffraction, and scanning electron microscopy was performed to determine average grain size. The measured work function has a maximum of 5.1 eV at 0.3 microns, and decreases to 3.2 eV at approximately 4 microns. Then the work function increases with increasing grain size to 4.0 eV at 15 microns and then asymptotically approaches the 4.8 eV work function of single crystal diamond at 108 microns. These results are consistent with a 3-component model in which the work function is controlled by single-crystal (111) diamond at larger grain sizes, graphitic carbon at smaller grain sizes, and by the electron affinity for the intervening grain sizes.

Knowledge of the atomic number (Zt) dependence of ion-induced electron emission yields (Y) can be the basis for a general understanding of ion-atom interaction phenomena and, in particular, for the design of Zrsensitive detectors that could be useful, for example, in the separation of isobars in accelerator mass spectrometry. The Zx dependence of ion-induced electron emission yields has been investigated using heavy ions of identical velocity (v = 2 v0, with v0 as the Bohr velocity) incident in a normal direction on sputter-cleaned carbon foils. Yields measured in this work plotted as a function of the ion's atomic number reveal an oscillatory behavior with pronounced maxima and minima. This nonmonotonic dependence of the yield on Zx will be discussed in the light of existing theories.

Thesis (Elec.E)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1982. / MICROFICHE COPY AVAILABLE IN ARCHIVES AND ENGINEERING. / Bibliography: leaves 172-176. / by Chon Meng Wong. / Elec.E

In this thesis, the development of a novel experimental technique for measuring the spontaneous, stochastic work function (WF) fluctuations of conducting polymer films, at equilibrium, is discussed. Polyaniline (PANI) is studied as a representative conducting polymer. This technique utilizes an insulated-gate field-effect transistor (IGFET) with PANI gate electrode (PANI-IGFET). The fluctuations of PANI WF are transduced into measurable drain current fluctuations of the device. By analyzing these fluctuations while systematically controlling the temperature, electric field and doping level, a model of WF fluctuations in PANI films is developed. These experiments suggest that the source of WF fluctuations is the hopping of charge carriers, or trapping/detrapping of charge carriers, around the Fermi level of the PANI film at the PANI-insulator interface. This process is thermally activated with a field and doping dependent activation energy in the range of 0.1 to 0.5 eV. Thus, this new technique provides detailed information about charge-carrier dynamics in the space-charge region of the PANI film, at equilibrium. These results have important implications for organic electronics and furthering fundamental understanding of the relationship between doping, disorder and work function in organic semiconductors.

Orientador: Marco Antonio Robert Alves / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação / Made available in DSpace on 2018-08-16T13:49:16Z (GMT). No. of bitstreams: 1 Danieli_CarlosLucianoDe_M.pdf: 1990598 bytes, checksum: 6745c93234cd7c2b42245ced236075ec (MD5) Previous issue date: 2010 / Resumo: Este trabalho de mestrado utilizou várias técnicas convencionais de microfabricação desenvolvidas nas indústrias de semicondutores e teve como objetivo fabricar microponteiras de silício com melhorias nas características geométricas e morfológicas, ou seja, microponteiras altas e com pequenos cones de abertura, relacionados ao aumento do fator de emissão de campo (?) e redução da rugosidade da superfície, relacionado à função trabalho do material (?), utilizando máscaras de DLC e plasma de SF6/O2 e SF6 puro. Além disso, este trabalho investigou minuciosamente a origem, composição e distribuição da camada residual que apareceu no topo das microponteiras através da técnica de microanálise MEV/EDS, uma vez que a ocorrência de camadas residuais nas superfícies das microponteiras não tem sido reportada na literatura e que elas influenciam nas características da superfície das mesmas (substâncias adsorvidas e rugosidade) e do substrato. Com esta análise, foi possível verificar que o aparecimento da camada residual está relacionado ao mecanismo de corrosão do plasma de SF6/O2 que foi utilizado, pois se acredita que a camada residual encontrada trata-se da camada de passivação SiOxFy, que independe do material utilizado como máscara e que apresenta enxofre adsorvido em toda amostra. A técnica de AFM foi utilizada para se estudar em alta resolução os efeitos do plasma de SF6/O2 na morfologia da superfície do substrato. Com isso, foi possível verificar a existência de uma relação linear entre a rugosidade e tempo de corrosão, para as condições de processo utilizadas / Abstract: At this work, several conventional microfabrication techniques developed in the semiconductor industry were used and aimed to make silicon microtips with improved geometrical and morphological characteristics, ie taller microtips and the aperture cones of the tip smaller, related to increased emission factor field (?) and reduced surface roughness, related to the material work function (?), using DLC masks and plasma SF6/O2 and pure SF6. In addition, this study investigated in detail, the origin, composition and distribution of residual layer that have appeared at the top of microtips, using the technique of microanalysis by SEM/EDS, since the occurrence of residual layers on the surfaces of microtips have been not reported in the literature and their influence the surface characteristics of microtips (adsorbed substances and roughness) and the substrate. With this analysis, it was observed that the occurrence of the residual layer is related to the corrosion mechanism of plasma SF6/O2 used, because it is believed that the residual layer is found from the SiOxFy passivation layer, which is independent of mask material, and has sulfur adsorbed on all sample surface. The AFM technique was used to study with high resolution the effects of plasma SF6/O2 in the morphology of the substrate. Thus it was possible to verify the existence of a linear relationship between roughness and the corrosion time for the process conditions used / Mestrado / Eletrônica, Microeletrônica e Optoeletrônica / Mestre em Engenharia Elétrica

Orientador: Vitor Baranauskas / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-06T07:59:42Z (GMT). No. of bitstreams: 1 Amorim_MauroVanderleide_M.pdf: 4658675 bytes, checksum: 1d0d3ce62cb40cd86d00a29631b96508 (MD5) Previous issue date: 2005 / Resumo: Foi desenvolvida uma câmara de vácuo para estudo das propriedades elétricas de emissão de elétrons por catodos frios de vários materiais de interesse tecnológico, por exemplo, diamante dopado, filmes de carbono diamantífero e silício. Na parte experimental realizamos um sistema de alto vácuo (bomba mecânica mais a bomba difusora), um sistema de posicionamento de 6 graus de liberdade e um sistema de medida da corrente de emissão de elétrons. A modelagem matemática da emissão foi baseada na teoria de Fowler ¿ Nordheim. Foram feitos os cálculos relativos às propriedades de vácuo do sistema utilizado e a seguir a caracterização de algumas amostras de estruturas nanométricas produzidas utilizando o processo de deposição química a partir da fase vapor do etanol (HFCVD) com altas concentrações de hélio e argônio / Abstract: A vacuum chamber was developed for study the physical properties of electron emission by cold cathodes of several materials of technological interest as for example, doped diamond, films of diamond-like carbon and silicon. In the experimental part we accomplished a system of high vacuum (mechanic and diffusion pumps), a positioning system of 6 degrees of freedom and a system to measure of the electron emission current. The mathematical modeling of the emission was based on the theory of Fowler - Nordheim. Relative calculation of the properties of vacuum in the used system was made to check the characterization of some samples of nanometric structures produced using the process of chemical deposition starting from the phase vapor of the ethanol (HFCVD) with high concentrations of helium and argon / Mestrado / Eletrônica, Microeletrônica e Optoeletrônica / Mestre em Engenharia Elétrica

Orientador: Vitor Baranauskas / Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação / Made available in DSpace on 2018-08-21T02:41:28Z (GMT). No. of bitstreams: 1 Iannini_RobertoFonseca_D.pdf: 3201679 bytes, checksum: cd82a05d0dedaa3ecc2f0ca77550b58d (MD5) Previous issue date: 2012 / Resumo: Foi projetado e desenvolvido um sistema de aquisição de dados e controle para viabilizar, de forma automatizada, a caracterização de emissividade eletrônica em catodos frios, por meio da utilização da câmara de ultra alto vácuo do Departamento de Semicondutores, Instrumentação e Fotônica - DSIF, da Faculdade de Engenharia Elétrica e Computação - FEEC/Unicamp. A instrumentação desenvolvida teve como motivação: i) aumentar a confiabilidade dos procedimentos de leitura da corrente de emissão de campo em amostras de materiais nanoestruturados produzidos no laboratório; ii) garantir a reprodutibilidade dos ensaios; iii) preservar a integridade das amostras; iv) eliminar fontes de erro existentes no processo de aquisição dos dados; v) prover uma família de curvas de forma automatizada, para cada posicionamento da amostra analisada. Os principais desafios encontrados durante os trabalhos relacionaram-se com a definição da topologia do circuito de entrada, da forma da isolação galvânica, interferências e tratamento dos dados adquiridos. Após a entrada em operação da instrumentação, foram também realizados ensaios para fins de validação da instrumentação desenvolvida e dos procedimentos adotados para sua operação / Abstract: A data acquisition and control system was designed and built in order to promote, in an automated fashion, the characterization of cold cathodes in the ultra high vacuum chamber of the DSIF, at the FEEC/Unicamp. The designed instrumentation was supposed to meet the following requirements: i) Enhance the accuracy of the field emission reading procedures for the nanostructured samples made in the same laboratory; ii) Ensure better repeatability of the tests; iii) Preserve the physical integrity of the samples; iv) Eliminate sources of error in the data acquisition process; v) Allow for automated establishment of a family of curves for each point of the sample material. The main challenges during this work were related to the circuit architecture, its input topology, galvanic isolation, interferences and data management. As the instrumentation started working, we have performed a series of tests for validation purposes, including the adopted operational proceedings / Doutorado / Eletrônica, Microeletrônica e Optoeletrônica / Doutor em Engenharia Elétrica