No description available.

This thesis is concerned with the growth, electronic properties and modification of hydrogenated amorphous carbon films of a thickess range of 50-300 nm, which have been deposited using rf plasma-enhanced chemical vapour deposition. These films may be subdivided into two types according to the electrode on which they are grown and the resulting film properties. These are polymer-like amorphous carbon or PAC, and diamond-like amorphous carbon or DAC. PAC possesses a wide optical band gap (2.7 eV), high resistivity (1014 - 10 15 Ocm) and low density of paramagnetic defects (~ 10 17 spins cm-3). The dominant current transport mechanism at room temperature has been observed to be hopping conduction at low electric fields and space-charge-limited current at high electric fields. The addition of nitrogen gas to the plasma to incorporate nitrogen within the film has been shown to move the Fermi level by 1 eV, towards midgap. A mechanism of doping due to the introduction of aromatic nitrogen-containing sites has been postulated. The boron, carbon and nitrogen ion implantation of PAC has resulted in the controllable increase in conductivity from 1015 to 106 O cm as a function of ion dose, from 2 x 1012 to 2 X 1016 ions cm-2. At low ion doses (up to 6 x 1014 ions cm-2) this occurs without any change in band gap; however, at higher doses the band gap collapses as a result of graphitisation. The dependence on the implant ion shows that it is possible to move the Fermi level towards the valence band with the implantation of boron, and towards midgap with the implantation of nitrogen. A hysteresis effect is observed at intermediate ion doses, which is attributed to the trapping of holes resulting in an increase in electron current. Implanting part of the thickness of the film at this ion dose has resulted in rectification, which has not previously been reported for this type of structure in amorphous carbon. DAC has been shown to possess a smaller band gap (0.7 eV), higher density of defects (~ 1020 spins cm-3) and lower resistivity (~ 1013 O cm) than PAC. The room-temperature current transport is governed by band-tail conduction at fields below 105 V cm-1, and the Poole-Frenkel effect at higher fields. The addition of nitrogen of up to 8 at. % has been observed to increase the band gap from 0.7 to 1.0 eV and therefore decrease the magnitude of the Poole-Frenkel conductivity. The Fermi level remains pinned at midgap, however. Therefore, it appears that PAC shows advantages over DAC in terms of future device applications.

Synthesis of antiaromatic polycyclic hydrocarbons (PHs) is challenging because the high energy of their highest occupied molecular orbital and low energy of their lowest unoccupied molecular orbital cause them to be reactive and unstable. In this work, two large antiaromatic acene analogues, namely, cyclopenta[pqr]indeno[2,1,7-ijk]tetraphene (CIT, 1a) and cyclopenta[pqr]indeno[7,1,2-cde]picene (CIP, 1b), as well as a curved antiaromatic molecule with 48 πelectrons, dibenzo[a,c]diindeno[7,1,2-fgh:7′,1′,2′-mno]-phenanthro[9,10-k]tetraphene (DPT, 1c), are synthesized on the basis of the corona of indeno[1,2-b]fluorene. These three antiaromatic PHs possess a narrow energy gap down to 1.55 eV and exhibit high kinetic stability under ambient conditions. Moreover, these compounds display reversible electron transfer processes in both the cathodic and anodic regimes. Their cation and anion radicals are characterized by in situ vis−NIR absorption and electron paramagnetic resonance spectroelectrochemistry. The X-ray crystallographic analysis confirms that while CIP and CIT manifest planar structures, DPT shows a curved πconjugated carbon skeleton. The synthetic strategy starting from ortho-substituted benzene units to construct five-membered rings in this work provides a unique entry to novel pentagon-embedding or curved antiaromatic polycyclic hydrocarbons. In addition, besides the detailed chemical and physical investigations, microscale single-crystal fiber field-effect transistors were also fabricated.

[FR] L'énergie photovoltaïque se présente comme une solution primordiale dans la lutte contre le réchauffement climatique. Malgré la maturité et la fiabilité de la technologie des cellules en silicium cristallin, les défis liés à la purification énergivore du silicium restent un obstacle coûteux. Dans cette optique, les pérovskites halogénées, notamment le FAPbI3, se profilent comme des alternatives prometteuses au silicium en raison de leur capacité à être synthétisées à faible coût à température ambiante, tout en présentant des propriétés optiques et électroniques attractives. Cependant, l'instabilité des pérovskites en contact avec l'air ambiant constitue un obstacle majeur à leur utilisation comme couche absorbante. Pour surmonter ce défi, une approche a consisté à modifier la composition chimique des pérovskites en utilisant la technique du spin-coating. L'étude a révélé que les pérovskites mixtes contenant de l'iodure (I) et du brome (Br), tels que le FAPbI2Br et le FAPbBr2I, offrent un compromis intéressant entre stabilité et bande interdite. Contrairement au FAPbI3, qui perd ses propriétés optiques après un certain temps en conditions ambiantes, ces pérovskites mixtes conservent leur capacité d'absorption dans le visible même après vieillissement. De plus, le FAPbBr2I s'est avéré environ trois fois plus photoluminescent que le FAPbI3, suggérant une conversion plus efficace des photons absorbés en paires électron-trou, ce qui en fait un candidat attractif pour les applications photovoltaïques. Cependant, il convient de noter que le FAPbBr2I présente un gap énergétique trop large pour de telles applications. Pour remédier à cette limitation, le dopage du FAPbBr2I avec du bismuth a été étudié, montrant une réduction significative du gap énergétique avec l'augmentation de la concentration en bismuth. Néanmoins, il a été observé que les photons émis par photoluminescence avaient une énergie supérieure à celle des photons absorbés, ce qui pourrait être dû à la dissipation de la chaleur dans le réseau cristallin. Ce décalage anti-Stokes nécessite une enquête plus approfondie. / [ES] La energía fotovoltaica se presenta como una solución clave en la lucha contra el calentamiento global. A pesar de la madurez y confiabilidad de la tecnología de células de silicio cristalino, los desafíos de la purificación de silicio intensiva en energía siguen siendo un obstáculo costoso. Con esto en mente, las perovskitas halogenadas, especialmente FAPbI3, están emergiendo como alternativas prometedoras al silicio debido a su capacidad de ser sintetizadas a bajo costo a temperatura ambiente, aunque tiene propiedades ópticas y electrónicas atractivas. Sin embargo, la inestabilidad de las perovskitas en contacto con el aire ambiente constituye un obstáculo importante para su uso como capa absorbente. Para superar este desafío, un enfoque fue modificar la composición química de las perovskitas utilizando la técnica de recubrimiento por centrifugación. El estudio reveló que las perovskitas mixtas que contienen yoduro (I) y bromo (Br), como FAPbI2Br y FAPbBr2I, ofrecen un compromiso interesante entre la estabilidad y la brecha de banda. A diferencia de FAPbI3, que pierde sus propiedades ópticas después de un cierto tiempo en condiciones ambientales, estas perovskitas mixtas conservan su capacidad de absorción en el visible incluso después del envejecimiento. Además, se encontró que FAPbBr2I era aproximadamente tres veces más fotoluminiscente que FAPbI3, lo que sugiere una conversión más eficiente de los fotones absorbidos en pares electrón-agujero, y, esto lo convierte en un candidato atractivo para aplicaciones fotovoltaicas. Sin embargo, debe tenerse en cuenta que FAPbBr2I tiene una brecha de energía más amplia que la ideal para tales aplicaciones. Para superar esta limitación, se estudió el dopaje de FAPbBr2I con bismuto, mostrando una reducción significativa de la brecha energética con el aumento de la concentración de bismuto. Sin embargo, se ha observado que los fotones emitidos por la fotoluminiscencia tienen una energía superior a la de los fotones absorbidos, y, esto podría deberse a la disipación de calor en la red cristalina. Este retraso anti-Stokes requiere más investigación. / [EN] Photovoltaic energy emerges as a crucial solution in the fight against climate change. Despite the maturity and reliability of crystalline silicon cell technology, challenges related to the energy-intensive purification of silicon remain a costly barrier. In this context, halide perovskites, especially FAPbI3, are emerging as promising alternatives to silicon due to their ability to be synthesized cost-effectively at room temperature while exhibiting attractive optical and electronic properties. However, the instability of perovskites in contact with ambient air poses a major obstacle to their use as an absorbing layer. To overcome this challenge, one approach has been to modify the chemical composition of perovskites using the spin-coating technique. The study revealed that misted perovskites containing iodide (I) and bromide (Br), such as FAPbI2Br and FAPbBr2I, offer an interesting compromise between stability and bandgap. Unlike FAPbI3, which loses its optical properties after some time under ambient conditions, these misted perovskites retain their absorption capacity in the visible range even after aging. Furthermore, FAPbBr2I was found to be approximately three times more photoluminescent than FAPbI3, suggesting a more efficient conversion of absorbed photons into electron-hole pairs, making it an attractive candidate for photovoltaic applications. However, it is worth noting that FAPbBr2I has a wider energy gap than ideal for such applications. To address this limitation, doping FAPbBr2I with bismuth was studied, showing a significant reduction in the energy gap with increasing bismuth concentration. Nevertheless, it was observed that the photons emitted by photoluminescence had higher energy than those absorbed, which could be due to heat dissipation in the crystal lattice. This anti-Stokes shift requires further investigation. / Abdoulaye, T. (2024). Etude de stabilité des pérovskites aux halogénures mixtes plombate de Formamidinium FAPbX3 avec X={ Cl,Br,I} [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/203190

Neste trabalho filmes finos de silício amorfo hidrogenado (a-Si:H) foram depositados no reator magnetron sputtering do laboratório de sistemas integráveis (LSI), a temperaturas menores que 100 °C, pela introdução do gás hidrogênio junto com o de argônio para pulverização de um alvo de silício policristalino. As condições de deposição investigadas estão compreendidas em pressões totais de 5 e 10 mTorr para as quais a potência de RF variou de 150 a 300 W, para a menor pressão, e de 200 a 300 W, para a maior pressão, sendo que para cada condição de potência a concentração de hidrogênio nos gases de descarga variou de pelo menos 0 % a no máximo 60 %. Como os substratos utilizados foram carbono vítreo, lâminas oxidadas de silício e placas de vidro para microscópio óptico os filmes depositados sobre o carbono foram caracterizados por RBS, os depositados sobre as lâminas oxidadas de silício por FTIR e medidas IV e os depositados sobre o vidro por espectroscopia de absorção óptica na região do ultravioleta-visível. A caracterização RBS forneceu informações tanto sobre o tipo e quantidade de impurezas eventualmente incorporadas durante a deposição como sobre a densidade superficial do silício que permitiu a obtenção da densidade volumétrica pela utilização dos parâmetros de espessura obtidos pela técnica de perfilometria. Através da análise dos espectros FTIR o hidrogênio incorporado pode ser quantificado na forma de mono e polihidretos de silício. As medidas IV foram realizadas através de contatos de alumínio, evaporados sobre os filmes, para a obtenção tanto da condutividade de escuro como da fotocondutividade e a análise dos espectros de absorção óptica dos filmes permitiu a obtenção tanto dos valores de energia do gap óptico, pelo método Tauc, como do parâmetro B que é inversamente proporcional à largura da cauda das bandas de valência e de condução que por sua vez aumentam com o aumento da densidade de defeitos dos filmes. Desta forma os filmes que apresentaram as maiores fotosensibilidades (razão entre a fotocondutividade e a condutividade de escuro), consideradas para a escolha dos melhores resultados, foram os depositados a 10 mTorr uma vez que eles apresentam uma maior concentração tanto de ligações SiH 2 como de SiH 3 e menores concentrações totais de hidrogênio incorporado ao filme que os filmes depositados a 5 mTorr o que acabou contribuindo para a diminuição da densidades de estados localizados da banda de mobilidade, provavelmente devido a nucleação de cristais, o que ocorre tipicamente para filmes depositados por sistemas magnetron sputtering a grandes pressões totais e grandes pressões parciais de hidrogênio, estando, desta forma, tanto as ligações SiH 2 como SiH 3 situadas nos contornos de grão. Assim os filmes depositados a 10 mTorr apresentam concentrações quase nula de ligações SiH, mas as maiores fotosensibilidades. / In this work thin films of hydrogenated amorphous silicon (a-Si:H) were deposited in the magnetron sputtering reactor of the Laboratório de Sistemas Integráveis (LSI), at temperatures lower than 100 °C, by the introduction of hydrogen and argon gasses for the sputtering of a policrystalline silicon target. The deposition conditions investigated are total pressures of 5 and 10 mTorr for which the RF power varied from 150 to 300 W, for the lowest pressure, and from 200 to 300 W, for the highest pressure. For each power condition the hydrogen concentration in the discharge gases ranged from 0 % to maximum 60 %. The substrates used were glassy carbon, for RBS characterization, oxidized silicon wafers for FTIR and IV measurements and glass plate for optical microscope and visible-ultraviolet spectroscopy absorption. The RBS characterization provided information about both the type and quantity of impurity incorporated during the deposition and the amorphous silicon superficial density that allowed obtaining the volumetric density by the utilization of the thickness parameter obtained by the profilometry technique. Through the analyses of the FTIR spectra the hydrogen incorporated could be quantified in the form of mono and poli silicon hydrides. The IV measurements were performed, through aluminum contacts evaporated on the films, to obtain the dark and photoconductivity and the films ultraviolet-visible absorption spectra. Through ultraviolet-visible analysis was possible to obtain both the optical energy gap values, by the Tauc method, and the B parameter, which is inversely proportional to the valence and conduction tail width. The B parameter increases with the defect density of the films. Thus, the films that showed the biggest photosensitivity (relation between the photoconductivity and dark conductivity) were deposited at 10 mTorr. These films showed a higher concentration of both SiH 2 and SiH 3 bonds but a lower concentration of total hydrogen incorporated, which contributed to the decrease of the density of states in the mobility band, probably due to the nucleation of crystals typical of films deposited by the magnetron sputtering system at high pressure and high hydrogen concentration. In this way the SiH 2 and SiH 3 would be in the grain boundary. So the films deposited at 10 mTorr showed almost null concentration of SiH bonds, but the highest photosensitivities.

Neste trabalho filmes finos de silício amorfo hidrogenado (a-Si:H) foram depositados no reator magnetron sputtering do laboratório de sistemas integráveis (LSI), a temperaturas menores que 100 °C, pela introdução do gás hidrogênio junto com o de argônio para pulverização de um alvo de silício policristalino. As condições de deposição investigadas estão compreendidas em pressões totais de 5 e 10 mTorr para as quais a potência de RF variou de 150 a 300 W, para a menor pressão, e de 200 a 300 W, para a maior pressão, sendo que para cada condição de potência a concentração de hidrogênio nos gases de descarga variou de pelo menos 0 % a no máximo 60 %. Como os substratos utilizados foram carbono vítreo, lâminas oxidadas de silício e placas de vidro para microscópio óptico os filmes depositados sobre o carbono foram caracterizados por RBS, os depositados sobre as lâminas oxidadas de silício por FTIR e medidas IV e os depositados sobre o vidro por espectroscopia de absorção óptica na região do ultravioleta-visível. A caracterização RBS forneceu informações tanto sobre o tipo e quantidade de impurezas eventualmente incorporadas durante a deposição como sobre a densidade superficial do silício que permitiu a obtenção da densidade volumétrica pela utilização dos parâmetros de espessura obtidos pela técnica de perfilometria. Através da análise dos espectros FTIR o hidrogênio incorporado pode ser quantificado na forma de mono e polihidretos de silício. As medidas IV foram realizadas através de contatos de alumínio, evaporados sobre os filmes, para a obtenção tanto da condutividade de escuro como da fotocondutividade e a análise dos espectros de absorção óptica dos filmes permitiu a obtenção tanto dos valores de energia do gap óptico, pelo método Tauc, como do parâmetro B que é inversamente proporcional à largura da cauda das bandas de valência e de condução que por sua vez aumentam com o aumento da densidade de defeitos dos filmes. Desta forma os filmes que apresentaram as maiores fotosensibilidades (razão entre a fotocondutividade e a condutividade de escuro), consideradas para a escolha dos melhores resultados, foram os depositados a 10 mTorr uma vez que eles apresentam uma maior concentração tanto de ligações SiH 2 como de SiH 3 e menores concentrações totais de hidrogênio incorporado ao filme que os filmes depositados a 5 mTorr o que acabou contribuindo para a diminuição da densidades de estados localizados da banda de mobilidade, provavelmente devido a nucleação de cristais, o que ocorre tipicamente para filmes depositados por sistemas magnetron sputtering a grandes pressões totais e grandes pressões parciais de hidrogênio, estando, desta forma, tanto as ligações SiH 2 como SiH 3 situadas nos contornos de grão. Assim os filmes depositados a 10 mTorr apresentam concentrações quase nula de ligações SiH, mas as maiores fotosensibilidades. / In this work thin films of hydrogenated amorphous silicon (a-Si:H) were deposited in the magnetron sputtering reactor of the Laboratório de Sistemas Integráveis (LSI), at temperatures lower than 100 °C, by the introduction of hydrogen and argon gasses for the sputtering of a policrystalline silicon target. The deposition conditions investigated are total pressures of 5 and 10 mTorr for which the RF power varied from 150 to 300 W, for the lowest pressure, and from 200 to 300 W, for the highest pressure. For each power condition the hydrogen concentration in the discharge gases ranged from 0 % to maximum 60 %. The substrates used were glassy carbon, for RBS characterization, oxidized silicon wafers for FTIR and IV measurements and glass plate for optical microscope and visible-ultraviolet spectroscopy absorption. The RBS characterization provided information about both the type and quantity of impurity incorporated during the deposition and the amorphous silicon superficial density that allowed obtaining the volumetric density by the utilization of the thickness parameter obtained by the profilometry technique. Through the analyses of the FTIR spectra the hydrogen incorporated could be quantified in the form of mono and poli silicon hydrides. The IV measurements were performed, through aluminum contacts evaporated on the films, to obtain the dark and photoconductivity and the films ultraviolet-visible absorption spectra. Through ultraviolet-visible analysis was possible to obtain both the optical energy gap values, by the Tauc method, and the B parameter, which is inversely proportional to the valence and conduction tail width. The B parameter increases with the defect density of the films. Thus, the films that showed the biggest photosensitivity (relation between the photoconductivity and dark conductivity) were deposited at 10 mTorr. These films showed a higher concentration of both SiH 2 and SiH 3 bonds but a lower concentration of total hydrogen incorporated, which contributed to the decrease of the density of states in the mobility band, probably due to the nucleation of crystals typical of films deposited by the magnetron sputtering system at high pressure and high hydrogen concentration. In this way the SiH 2 and SiH 3 would be in the grain boundary. So the films deposited at 10 mTorr showed almost null concentration of SiH bonds, but the highest photosensitivities.

The present thesis is devoted to the investigation of novel superconductors by phase-sensitive terahertz transmission and infrared to ultraviolet spectroscopy. In particular, a nominally undoped Pr2CuO4 superconducting thin film, an FeTe0.5Se0.5 thin film, and a LiFeAs single crystal have been investigated. The emphasis is on the low-frequency part of the optical spectrum (i.e., the terahertz and infrared spectrum), as the goal of the study was to shed light on the size and symmetry of the superconducting gaps and also to determine the temperature dependences as well as the absolute values of the penetration depth, which are key input parameters for models applicable for new superconductors. In addition, niobium has been investigated as a reference, so as to see what is expected from conventional superconductors and to clarify the electrodynamics of niobium. A superconducting Nb thin film with Tc of 8.04 K has been investigated by backward wave oscillator-based (BWO-based) and time-domain terahertz (TDT) spectrometers in the frequency range between 4 and 100 cm−1 for temperatures ranging from 2 to 10 K. From these measurements an energy gap of 22.50 cm−1 = 2.79 meV = 4.02kBTc have been determined. The optical conductivity below Tc could nicely be described by calculations according to the Eliashberg theory, with the electron-phonon interaction evaluated from tunneling measurements. Absolute values of the penetration depth have been calculated from phase-sensitive terahertz measurements. The zero-temperature limit of at T = 0 is found to be 115 ± 5 nm. From this value, a London penetration depth of 43 ± 2 nm has been obtained. The overall temperature dependence of the penetration depth follows a behavior typical for conventional s-wave superconductors. A superconducting Pr2CuO4 film with T0 structure and Tc of 27 K has been investigated by use of optical methods in a wide frequency (5 – 55000 cm−1) and temperature (2 – 300 K) range. A Drude-like peak centered at zero frequency is observed in the optical conductivity below 150 K, above which it shifts to finite frequencies. The detailed analysis of the low-frequency conductivity reveals that the Drude peak and a far-infrared (FIR) peak centered at about 300 cm−1 persist at all temperatures. The FIR spectral weight is found to grow at the expense of the Drude spectral weight with increasing temperature. Absolute values of the penetration depth have been obtained from temperature and frequency-dependent measurements. The zero-temperature limit of is estimated to be 1600 ± 100 nm. The overall temperature dependence of follows a behaviour typical for cuprate superconductors. However, a closer look at the penetration depth at T 12 K reveals a flattening in the temperature dependence. A superconducting FeTe0.5Se0.5 thin film with Tc = 19 K has been investigated using a combination of BWO and TDT spectroscopy in the frequency range 4 - 80 cm−1 and between 3 and 150 K. From such measurements, a superconducting energy gap of 30 cm−1, representing a coupling strength = 2.27, is observed. Further, the penetration depth has been derived from the temperature dependence of the imaginary part of complex conductivity with the penetration depth = 530 ± 10 nm at lowest measured temperature. The temperature-dependent normalized superfluid density, just as is the case with most iron-based superconductors, could nicely be described by the so-called two-gap gamma model. Finally, a superconducting LiFeAs single crystal with Tc = 18 K has been investigated by optical spectroscopy in the frequency range 15 - 55000 cm−1 between 5 and 300 K. From these measurements, no clear signature of the superconducting energy-gap opening could be identified in spite of the spectral weight been suppressed in the infrared frequency regime below Tc. This indicates that LiFeAs single crystal is in a clean limit. With the aid of the Ferrell-Glover-Tinkham (FGT) sum rule, an absolute penetration depth of 215 nm has been calculated from the missing area at 5 K.

The present thesis is devoted to the investigation of novel superconductors by phase-sensitive terahertz transmission and infrared to ultraviolet spectroscopy. In particular, a nominally undoped Pr2CuO4 superconducting thin film, an FeTe0.5Se0.5 thin film, and a LiFeAs single crystal have been investigated. The emphasis is on the low-frequency part of the optical spectrum (i.e., the terahertz and infrared spectrum), as the goal of the study was to shed light on the size and symmetry of the superconducting gaps and also to determine the temperature dependences as well as the absolute values of the penetration depth, which are key input parameters for models applicable for new superconductors. In addition, niobium has been investigated as a reference, so as to see what is expected from conventional superconductors and to clarify the electrodynamics of niobium. A superconducting Nb thin film with Tc of 8.04 K has been investigated by backward wave oscillator-based (BWO-based) and time-domain terahertz (TDT) spectrometers in the frequency range between 4 and 100 cm−1 for temperatures ranging from 2 to 10 K. From these measurements an energy gap of 22.50 cm−1 = 2.79 meV = 4.02kBTc have been determined. The optical conductivity below Tc could nicely be described by calculations according to the Eliashberg theory, with the electron-phonon interaction evaluated from tunneling measurements. Absolute values of the penetration depth have been calculated from phase-sensitive terahertz measurements. The zero-temperature limit of at T = 0 is found to be 115 ± 5 nm. From this value, a London penetration depth of 43 ± 2 nm has been obtained. The overall temperature dependence of the penetration depth follows a behavior typical for conventional s-wave superconductors. A superconducting Pr2CuO4 film with T0 structure and Tc of 27 K has been investigated by use of optical methods in a wide frequency (5 – 55000 cm−1) and temperature (2 – 300 K) range. A Drude-like peak centered at zero frequency is observed in the optical conductivity below 150 K, above which it shifts to finite frequencies. The detailed analysis of the low-frequency conductivity reveals that the Drude peak and a far-infrared (FIR) peak centered at about 300 cm−1 persist at all temperatures. The FIR spectral weight is found to grow at the expense of the Drude spectral weight with increasing temperature. Absolute values of the penetration depth have been obtained from temperature and frequency-dependent measurements. The zero-temperature limit of is estimated to be 1600 ± 100 nm. The overall temperature dependence of follows a behaviour typical for cuprate superconductors. However, a closer look at the penetration depth at T 12 K reveals a flattening in the temperature dependence. A superconducting FeTe0.5Se0.5 thin film with Tc = 19 K has been investigated using a combination of BWO and TDT spectroscopy in the frequency range 4 - 80 cm−1 and between 3 and 150 K. From such measurements, a superconducting energy gap of 30 cm−1, representing a coupling strength = 2.27, is observed. Further, the penetration depth has been derived from the temperature dependence of the imaginary part of complex conductivity with the penetration depth = 530 ± 10 nm at lowest measured temperature. The temperature-dependent normalized superfluid density, just as is the case with most iron-based superconductors, could nicely be described by the so-called two-gap gamma model. Finally, a superconducting LiFeAs single crystal with Tc = 18 K has been investigated by optical spectroscopy in the frequency range 15 - 55000 cm−1 between 5 and 300 K. From these measurements, no clear signature of the superconducting energy-gap opening could be identified in spite of the spectral weight been suppressed in the infrared frequency regime below Tc. This indicates that LiFeAs single crystal is in a clean limit. With the aid of the Ferrell-Glover-Tinkham (FGT) sum rule, an absolute penetration depth of 215 nm has been calculated from the missing area at 5 K.

Nesta dissertação realizamos a síntese eletroquímica e a caracterização eletroquímica e óptica de polímeros conjugados eletroluminescentes no azul, como o poli(p-fenileno) (PPP) e alguns copolímeros. Filmes de PPP, poli(pirrol) (PPI), poli(3-metiltiofeno) (P3MET) e os copolímeros, copoli(p-fenileno-pirrol) (CPPI) e copoli(p-fenileno-3-metiltiofeno) (CP3MET), foram preparados por voltametria cíciica (VC) e cronoamperometria (CR) em eletrodos de óxido de estanho dopado com índio sobre vidro (ITO) em uma solução não-aquosa de acetonitrila e perclorato de tetrabutilamônio contendo os monômeros a diferentes concentrações. Durante a síntese eletroquímica dos filmes de PPP, PPI, P3MET, CPPI e CP3MET, foi usado CaC12 como agente secante em uma caixa-seca para reduzir a umidade do ar. Um tratamento de secagem permitiu um melhor controle sobre o crescimento dos filmes e a presença de umidade na síntese eletroquímica foi correlacionada as diferentes respostas eletroquímicas dos filmes. Os valores de potencial de ionização (PI) e de afinidade eletrônica (AE) foram calculados através da medida dos potenciais no início das curvas voltamétricas direta e inversa, quando foram obtidos os potenciais de oxidação e redução (Eoxd\' e Ered\'). Os valores de energia de gap eletrônico (EgapE) ara esses filmes foram também obtidos por medidas eletroquímicas. Através dos espectros de absorção no UVVIS, foi possível se calcular a energia de gap óptico (EgapO) para os diferentes filmes poliméricos. / In this work we describe the electrochemical and optical aspects of a series of electrochemically synthesized blue-electroluminescent conjugated polymers. The materials employed here comprised poly(p-phenylene) (PPP), poly(pyrro1e) (PPI), poly(3-methylthiophene) (P3MET), poly(p-pheny1ene-pyrrole) (CPPI) copolymer and poly(p-phenylene3methyIthiophene) (CP3MET) copolymer. The films were electrochemically synthesized and deposited onto indium-tin-oxide covered glass (ITO) electrodes. The latter was carried out using either cyclic voltammetry (VC) or cronoamperometry (CR) in a acetonitrile nonaqueous medium containing tetrabutilammonium perclorate and different concentration of the respective monomers. As a further film quality control, the synthesis was carried out within a glove box containing a CaCI2 salt, which acted as drying agent. The latter procedure allowed us to correlate the amount of moisture present within the glove box with the electrochemical properties of the films. The ionization potential (PI) and the electronic affinity (AE) were calculated using the oxidation and reduction on-set potentials of the films (Eoxd\' e Ered\'). The electronic gap (EgapE)d the optical gap energies were calculated using electrochemical and UV-VIS. spectroscopy respectively.

Nesta dissertação realizamos a síntese eletroquímica e a caracterização eletroquímica e óptica de polímeros conjugados eletroluminescentes no azul, como o poli(p-fenileno) (PPP) e alguns copolímeros. Filmes de PPP, poli(pirrol) (PPI), poli(3-metiltiofeno) (P3MET) e os copolímeros, copoli(p-fenileno-pirrol) (CPPI) e copoli(p-fenileno-3-metiltiofeno) (CP3MET), foram preparados por voltametria cíciica (VC) e cronoamperometria (CR) em eletrodos de óxido de estanho dopado com índio sobre vidro (ITO) em uma solução não-aquosa de acetonitrila e perclorato de tetrabutilamônio contendo os monômeros a diferentes concentrações. Durante a síntese eletroquímica dos filmes de PPP, PPI, P3MET, CPPI e CP3MET, foi usado CaC12 como agente secante em uma caixa-seca para reduzir a umidade do ar. Um tratamento de secagem permitiu um melhor controle sobre o crescimento dos filmes e a presença de umidade na síntese eletroquímica foi correlacionada as diferentes respostas eletroquímicas dos filmes. Os valores de potencial de ionização (PI) e de afinidade eletrônica (AE) foram calculados através da medida dos potenciais no início das curvas voltamétricas direta e inversa, quando foram obtidos os potenciais de oxidação e redução (Eoxd\' e Ered\'). Os valores de energia de gap eletrônico (EgapE) ara esses filmes foram também obtidos por medidas eletroquímicas. Através dos espectros de absorção no UVVIS, foi possível se calcular a energia de gap óptico (EgapO) para os diferentes filmes poliméricos. / In this work we describe the electrochemical and optical aspects of a series of electrochemically synthesized blue-electroluminescent conjugated polymers. The materials employed here comprised poly(p-phenylene) (PPP), poly(pyrro1e) (PPI), poly(3-methylthiophene) (P3MET), poly(p-pheny1ene-pyrrole) (CPPI) copolymer and poly(p-phenylene3methyIthiophene) (CP3MET) copolymer. The films were electrochemically synthesized and deposited onto indium-tin-oxide covered glass (ITO) electrodes. The latter was carried out using either cyclic voltammetry (VC) or cronoamperometry (CR) in a acetonitrile nonaqueous medium containing tetrabutilammonium perclorate and different concentration of the respective monomers. As a further film quality control, the synthesis was carried out within a glove box containing a CaCI2 salt, which acted as drying agent. The latter procedure allowed us to correlate the amount of moisture present within the glove box with the electrochemical properties of the films. The ionization potential (PI) and the electronic affinity (AE) were calculated using the oxidation and reduction on-set potentials of the films (Eoxd\' e Ered\'). The electronic gap (EgapE)d the optical gap energies were calculated using electrochemical and UV-VIS. spectroscopy respectively.