The Etching Chamber is the most important component of Etcher. It provides an environment to etch wafer and transfer wafer to another chamber by robotic arm. The purpose of this research is to solve some problem such as the huge deformation around the edge of a hole which connected with a vacuum pump. And make use of the Engineering Design Method to redesign the original Etching Chamber. In the first place, the objectives of Etching Chamber are clarified, then establish function analysis figure and set requirement to separate all problem into all sub-problem . Second, by means of determining characteristics as well as generating alternatives, we can find all sub-solutions. Finally, we combine all solutions together by evaluating alternatives and improving details. Then we can find better solutions through appropriate process as well as solve all problem. Later, we use the computer aid design tool I-DEAS to draw and analyse Etching Chamber. In the end, we display the results and discuss after analysing chamber. What is more, we prove the performance and manufacturing cost of redesign Etching Chamber is better than original Etching Chamber.

This study is focused on the technique for fabrication of high aspect ratio nanostructures by combining both the advantages of maskless patterning of focused ion beam (FIB) and anisotropic etching of inductively coupled plasma etcher (ICP) in CF4 atmosphere. The materials contain p-type (100) single crystal silicon and thermal silicon dioxide. The study details include¡G (1) The reliability of AFM when scanning isotropic and anisotropic nanostructures with high aspect ratio tip in tapping mode. (2) FIB direct writing test. (3) The influences of ICP parameters including ICP power, bias power, content of oxygen, and process pressure. After completion of above-mentioned items, an optimized condition is used to get the anisotropic Si-based high aspect ratio nanostructures of holes array, gratings and cylinder under 100nm. The smallest line width of single crystal silicon gratings is 48nm, and aspect ratio up to 2.36. The smallest line width of silicon dioxide gratings is about 100nm, height is 410nm and aspect ratio up to 2.36 measured by SEM. By combining both advantages of different systems, we can provide another simple and rapid method for nanofabrication.

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