- About
-
The Global ETD Search service is a free service for researchers
to find electronic theses and dissertations. This service is
provided by the
Networked Digital Library of Theses and Dissertations.
Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
Search results
Showing 1 to 7 of 7 (0.06 seconds)Spelling suggestions: "subject:"ferroelectric capacitor"" "subject:"ferrroelectric capacitor""
| 1 |
On the relationship between field cycling and imprint in ferroelectric Hf₀.₅Zr₀.₅O₂Fengler, F. P. G., Hoffman, M., Slesazeck, S., Mikolajick, T., Schroeder, U. 17 August 2022 (has links)
Manifold research has been done to understand the detailed mechanisms behind the performance instabilities of ferroelectric capacitors based on hafnia. The wake-up together with the imprint might be the most controversially discussed phenomena so far. Among crystallographic phase change contributions and oxygen vacancy diffusion, electron trapping as the origin has been discussed recently. In this publication, we provide evidence that the imprint is indeed caused by electron trapping into deep states at oxygen vacancies. This impedes the ferroelectric switching and causes a shift of the hysteresis. Moreover, we show that the wake-up mechanism can be caused by a local imprint of the domains in the pristine state by the very same root cause. The various domain orientations together with an electron trapping can cause a constriction of the hysteresis and an internal bias field in the pristine state. Additionally, we show that this local imprint can even cause almost anti-ferroelectric like behavior in ferroelectric films.
|
| 2 |
Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitorsBuragohain, P., Richter, C., Schenk, Tony, Schroeder, Uwe, Mikolajick, Thomas, Lu, H., Gruverman, A. 27 April 2022 (has links)
Visualization of domain structure evolution under an electrical bias has been carried out in ferroelectric La:HfO2 capacitors by a combination of Piezoresponse Force Microscopy (PFM) and pulse switching techniques to study the nanoscopic mechanism of polarization reversal and the wake-up process. It has been directly shown that the main mechanism behind the transformation of the polarization hysteretic behavior and an increase in the remanent polarization value upon the alternating current cycling is electrically induced domain de-pinning. PFM imaging and local spectroscopy revealed asymmetric switching in the La:HfO2 capacitors due to a significant imprint likely caused by the different boundary conditions at the top and bottom interfaces. Domain switching kinetics can be well-described by the nucleation limited switching model characterized by a broad distribution of the local switching times. It has been found that the domain velocity varies significantly throughout the switching process indicating strong interaction with structural defects.
|
| 3 |
Fluid Imprint and Inertial Switching in Ferroelectric La:HfO2 CapacitorsBuragohain, Pratyush, Erickson, Adam, Kariuki, Pamenas, Mittmann, Terence, Richter, Claudia, Lomenzo, Patrick D., Lu, Haidong, Schenk, Tony, Mikolajick, Thomas, Schroeder, Uwe, Gruverman, Alexei 04 October 2022 (has links)
Ferroelectric (FE) HfO₂-based thin films, which are considered as one of the most promising material systems for memory device applications, exhibit an adverse tendency for strong imprint. Manifestation of imprint is a shift of the polarization–voltage (P–V) loops along the voltage axis due to the development of an internal electric bias, which can lead to the failure of the writing and retention functions. Here, to gain insight into the mechanism of the imprint effect in La-doped HfO₂ (La:HfO₂) capacitors, we combine the pulse switching technique with high-resolution domain imaging by means of piezoresponse force microscopy. This approach allows us to establish a correlation between the macroscopic switching characteristics and domain time–voltage-dependent behavior. It has been shown that the La:HfO₂ capacitors exhibit a much more pronounced imprint compared to Pb(Zr,Ti)O₃-based FE capacitors. Also, in addition to conventional imprint, which evolves with time in the poled capacitors, an easily changeable imprint, termed as “fluid imprint”, with a strong dependence on the switching prehistory and measurement conditions, has been observed. Visualization of the domain structure reveals a specific signature of fluid imprint—continuous switching of polarization in the same direction as the previously applied field that continues a long time after the field was turned off. This effect, termed as “inertial switching”, is attributed to charge injection and subsequent trapping at defect sites at the film–electrode interface.
|
| 4 |
Adoption of 2T2C ferroelectric memory cells for logic operationRavsher, Taras, Mulaosmanovic, Halid, Breyer, Evelyn T., Havel, Viktor, Mikolajick, Thomas, Slesazeck, Stefan 17 December 2021 (has links)
A 2T2C ferroelectric memory cell consisting of a select transistor, a read transistor and two ferroelectric capacitors that can be operated either in FeRAM mode or in memristive ferroelectric tunnel junction mode is proposed. The two memory devices can be programmed individually. By performing a combined readout operation, the two stored bits of the memory cells can be combined to perform in-memory logic operation. Moreover, additional input logic signals that are applied as external readout voltage pulses can be used to perform logic operation together with the stored logic states of the ferroelectric capacitors. Electrical characterization results of the logic-in-memory (LiM) functionality is presented.
|
| 5 |
DEVELOPING AN APPROACH TO IMPROVE BETA-PHASE PROPERTIES IN FERROELECTRIC PVDF-HFP THIN FILMSAshley S Dale (8771429) 02 May 2020 (has links)
Improved fabrication of poly(vinylindenefluoride)-hexafluoropropylene (PVDF-HFP) thin films is of particular interest due to the high electric coercivity found in the beta-phase structure of the thin film. We show that it is possible to obtain high-quality, beta-phase dominant PVDF-HFP thin films using a direct approach to Langmuir-Blodgett deposition without the use of annealing or additives. To improve sample quality, an automated Langmuir-Blodgett thin film deposition system was developed; a custom dipping trough was fabricated, a sample dipping mechanism was designed and constructed, and the system was automated using custom LabVIEW software. Samples were fabricated in the form of ferroelectric capacitors on substrates of glass and silicon, and implement a unique step design with a bottom electrode of copper with an aluminum wetting layer and a top electrode of gold with an aluminum wetting layer. Samples were then characterized using a custom ferroelectric measurement program implemented in LabVIEW with a Keithley picoammeter/voltage supply to confirm electric coercivity properties. Further characterization using scanning electron microscopy and atomic force microscopy confirmed the improvement in thin film fabrication over previous methods.
|
| 6 |
A 2TnC ferroelectric memory gain cell suitable for compute-in-memory and neuromorphic applicationSlesazeck, Stefan, Ravsher, Taras, Havel, Viktor, Breyer, Evelyn T., Mulaosmanovic, Halid, Mikolajick, Thomas 20 June 2022 (has links)
A 2TnC ferroelectric memory gain cell consisting of two transistors and two or more ferroelectric capacitors (FeCAP) is proposed. While a pre-charge transistor allows to access the single cell in an array, the read transistor amplifies the small read signals from small-scaled FeCAPs that can be operated either in FeRAM mode by sensing the polarization reversal current, or in ferroelectric tunnel junction (FTJ) mode by sensing the polarization dependent leakage current. The simultaneous read or write operation of multiple FeCAPs is used to realize compute-in-memory (CiM) algorithms that enable processing of data being represented by both, non-volatilely internally stored data and externally applied data. The internal gain of the cell mitigates the need for 3D integration of the FeCAPs, thus making the concept very attractive especially for embedded memories. Here we discuss design constraints of the 2TnC cell and present the proof-of-concept for realizing versatile (CiM) approaches by means of electrical characterization results.
|
| 7 |
Developing an approach to improve beta-phase properties in ferroelectric pvd-hfp thin filmsDale, Ashley S. 05 1900 (has links)
Indiana University-Purdue University Indianapolis (IUPUI) / Improved fabrication of poly(vinylindenefluoride)-hexafluoropropylene (PVDF-HFP) thin films is of particular interest due to the high electric coercivity found in the beta-phase structure of the thin film. We show that it is possible to obtain high-quality, beta-phase dominant PVDF-HFP thin films using a direct approach to Langmuir-Blodgett deposition without the use of annealing or additives. To improve sample quality, an automated Langmuir-Blodgett thin film deposition system was developed; a custom dipping trough was fabricated, a sample dipping mechanism was designed and constructed, and the system was automated using custom LabVIEW software. Samples were fabricated in the form of ferroelectric capacitors on substrates of glass and silicon, and implement a unique step design with a bottom electrode of copper with an aluminum wetting layer and a top electrode of gold with an aluminum wetting layer. Samples were then characterized using a custom ferroelectric measurement program implemented in LabVIEW with a Keithley picoammeter/voltage supply to confirm electric coercivity properties. Further characterization using scanning electron microscopy and atomic force microscopy confirmed the improvement in thin film fabrication over previous methods.
|
Page generated in 0.0662 seconds