Les capteurs biologiques basés sur l’électronique nanométrique ont la propriété intéressante d’être à l’échelle des molécules étudiées. Plus spécifiquement, grâce à leurs propriétés électroniques exceptionnelles, les transistors à effet de champ à base de graphène (TECG) permettent des mesures électriques locales à grandes vitesses d’acquisition et sur de longues durées, offrant un cadre idéal pour la biodétection et l’étude de la cinétique moléculaire. Le présent mémoire traite de l’analyse, la mesure et la fonctionnalisation des TECG dans l’optique d’en faire des biocapteurs performants. En introduction, nous décrirons les propriétés électroniques du graphène ainsi que les principaux concepts reliés aux transistors de graphène et à la détection biologique. Puis, nous établirons les trois objectifs qui seront élaborés en autant de chapitres. Dans le premier chapitre, nous présenterons une revue de littérature critique qui cible l’analyse statistique et l’assemblage de l’interface de détection comme facteurs déterminants de la performance à l’aide d’analyses originales et d’une description approfondie de l’état du domaine. Dans le deuxième chapitre, nous présenterons des ajustements concrets aux sysèmes expérimentaux basés sur les recommandations émises dans la revue. D’abord, nous améliorons la productivité de la fabrication des transistors, puis développons une instrumentation permettant de mesurer plusieurs capteurs en parallèle. Dans le troisième chapitre, nous prendrons avantage de ces modifications pour présenter dans le deuxième article une méthode permettant une fonctionnalisation du graphène à la fois contrôlée et solide. En utilisant le voltage de grille, nous initions et suspendons la fonctionnalisation covalente du graphène aux sels de diazonium afin d’obtenir le taux de greffage désiré, tout en observant la réaction en temps-réel. Ainsi, par nos avancées méthodologiques et d’instrumentation, nous résolvons un enjeu critique du développement de la chimie de surface, centrale à la performance de biodétection. / Nanoscale electronics are a promising tool for biosensing as they fit their target’s size and allow for local, fast-paced measurements over long time scales. Because of their exceptional electronic properties, graphene field-effect transistors (GFETs) are excellent candidates for biosensing and studying molecular kinetics. This work discusses the analysis, measurement, and functionalization of GFETs as optimized biosensors. In the introduction, we describe the electronic properties of graphene and the main concepts related to GFETs and biodetection. We also establish the three aims of the project, elaborated in three chapters. The first chapter contains a critical literature review that uses original analyses and a thorough state-of-the-field to target statistical analysis and the biorecognition interface assembly as determining factors in sensing performance. In the second chapter, we present the practical adjustments to the experimental systems based on the review’s recommendations. First, we increase the productivity of device fabrication, then we develop a multiplexed electrical measurement setup. In the third chapter, we take advantage of these modifications to present in the second article a method for stable and controlled functionalization. Using the gate voltage, we start and stop the covalent functionalization of graphene with aryldiazonium salts to get the desired grafting level, while observing the reaction in real-time. Thus, with our advances in methodology and instrumentation, we solve a critical aspect of surface chemistry, central for biodetection performance

Power device robustness refers to the device capability of withstanding abnormal events in power electronics applications, which is one of the key device capabilities that are desired in numerous applications. While the current robustness test methods and qualification standards are developed across the 70 years of Silicon (Si) device history, their applicability to the recent wide bandgap (WBG) power devices is questionable. While the market of WBG power devices has exceeded $1 billion and is fast growing, there are many knowledge gaps regarding their robustness, including the failure or degradation physics, testing methods, and lifetime extraction. This dissertation work studies the robustness of Gallium Nitride (GaN) power device. The structures of many GaN power devices are fundamentally different from Si or Silicon Carbide (SiC) power devices, leading to numerous open questions on GaN power device robustness. Based on the device structure, this dissertation is divided into two parts: The first half discusses the robustness of lateral GaN high electron mobility transistor (HEMT), which recently sees rapid adoption among wide range of applications such as the power adapter and chargers, data center, and photovoltaic panels. The absence of p-n junction between the source and drain of GaN HEMT results in the lack of avalanche mechanism. This raises a concern on the device capability of withstanding surge-energy or overvoltage stress, which hinders the penetration of GaN HEMTs in broader applications. To address this concern, the study begins with conducting the single-event unclamped inductive switching (UIS) test on two mainstream commercial p-gate GaN HEMTs with the Ohmic- and Schottky-type gate contacts, where the GaN HEMT is found to withstand surge energy through a resonant energy transfer between the device capacitance and the loop inductance. The failure mechanism is identified to be a pure electrical breakdown determined by device transient breakdown voltage (BV). The BV of GaN HEMT is further found to be "dynamic" from the switching tests with various pulse widths and frequencies, which is further explained by the time-dependent buffer trapping. This dynamic BV (BVDYN) phenomenon indicates that the static or single-pulse test may not reveal the true BV of GaN HEMT in high frequency switching applications. To address this gap, a novel testbed based on a zero-voltage-switching converter with an active clamping circuit is developed to enable the stable switching with kilovolt overvoltage and megahertz frequency. The overvoltage failure boundaries and failure mechanisms of four commercial p-gate GaN HEMTs from multiple vendors are explored. In addition to the frequency-dependent BVDYN, two new failure mechanisms are observed in some devices, which are attributable to the serious carrier trapping in GaN HEMTs under the high-frequency overvoltage switching. At last, based on the findings in the high frequency overvoltage test (HFOT), a physics-based lifetime model for commercial GaN HEMTs utilizing the device on resistance (RON) shift is established and validated by experimental results. Overall, the switching-based test methodology and experimental results provide critical references for the overvoltage protection and qualification of GaN power HEMTs. The second half of the dissertation discusses the robustness of the vertical GaN fin-channel junction field effect transistor (Fin-JFET), a promising pre-commercialized GaN power device with the p-n junction embedded between the gate and drain which enables the avalanche breakdown. The robustness study on GaN JFET follows similar test approaches as Si metal-oxide-semiconductor field-effect transistor (MOSFET) with two key interests: the avalanche and short circuit capabilities. The avalanche breakdown is first explored via the single-event and repetitive UIS tests and under various gate drivers, from which an interesting "avalanche-through-fin-channel" mechanism is discovered. By leveraging this avalanche path, the electro-thermal stress migrates from the main blocking p-n junction to the n-GaN fin channel, resulting in a very favorable failure-to-open-circuit signature. The single-pulse critical avalanche energy density (EAVA) of vertical GaN Fin-JFET is measured to be as high as 10 J/cm2, which is much higher than the Si MOSFET and comparable to the SiC MOSFET. The short circuit capability is explored utilizing the hard-switching fault on the 650-V rated GaN Fin-JFET, with a gate driving circuit identical to the switching application to best mimic device operation in converters. The short circuit withstanding time is measured to be 30.5 µs at an input voltage of 400 V, 17.0 µs at 600 V, and 11.6 µs at 800 V, all among the longest reported for 600-700 V normally-off transistors. In addition, the failure-to-open-circuit signature is also shown in the single-event and repetitive short circuit tests; all devices retain the avalanche breakdown after failure, which is highly desirable for system applications. These results suggest that, while GaN HEMT is already available in market, vertical GaN Fin-JFET shows superior avalanche and short-circuit robustness and thereby can unlock great potential of GaN devices for applications like automotive powertrains, motor drives, and grids. / Doctor of Philosophy / In recent years, many power electronics applications such as data centers and electric vehicles have witnessed a rapid increase in the adoption of wide bandgap (WBG) power devices. The Gallium Nitride (GaN) device is one of the most attractive candidates in WBG devices, owing to its good tradeoff between breakdown voltage and on resistance, as well as the small gate charge that enables high frequency switching. For power devices, their robustness against overvoltage and overcurrent stresses is as important as their performance under normal operations. However, the new material, new device structure, and new device physics in GaN power devices brought up many open knowledge gaps in their robustness study, particularly under the dynamic operation in switching circuits. This dissertation presents the work in exploring the robustness of GaN power devices. Based on the device structure, the discussion is divided in two parts: The first half of the dissertation focuses on the overvoltage robustness of the lateral GaN High Electron Mobility Transistor (HEMT), the commercially available device covering 30 to 900 V voltage classes. A key feature of this device is the lack of p-n junction between source and drain, leading to an absence of avalanche capability. The study is conducted on mainstream, commercial p-gate GaN HEMTs, with a combination of circuit testing, microscale failure analysis, and physics-based device simulation. The main contribution is on three aspects: identifying the single-event and high-frequency repetitive overvoltage boundaries of GaN HEMT, unveiling the failure and degradation mechanisms under transient overvoltage conditions, and providing guidelines to GaN HEMT device users with proper robustness test methodology for device qualification and screening. The second half of the dissertation focuses on the robustness of vertical GaN fin-channel junction field effect transistor (Fin-JFET), a promising pre-commercial GaN power device with the p-n junction implemented between the source and drain. The robustness tests follow the classic approaches deployed for Silicon power devices, where both the avalanche and short circuit capabilities are investigated. From the single-event and repetitive test results, the GaN JFET shows excellent avalanche robustness with a desirable failure-to-open-circuit behavior, as well as a critical avalanche energy (EAVA) of 10 J/cm2 that is higher than the Silicon metal-oxide-semiconductor field-effect transistor (MOSFET) and comparable to the Silicon Carbide MOSFET. For a 650-V rated GaN Fin-JFET, a record high 30.5 μs short circuit time is demonstrated under the hard-switching fault condition at 400 V input voltage. Overall, the results show great potential of GaN power devices for the power electronics applications that involve more stressful operation conditions for devices.

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Ion sensitive field effect transistors (ISFETs) are semiconductor sensors that have the capability to determine the selected concentration of a specific ion in a solution. Most modern ISFETs utilize their ion selective properties for glucose monitors for diabetics. However, in this thesis, the ISFET fabricated is for the selective detection of K+. The goals of this thesis are to develop a functioning ion-selective polymer membrane, manufacture a working FET device, and implement the two aspects together into a working bench-top K+ selective ISFET device. Properties of a polymer composed of 33 wt.% polyvinyl chloride (PVC) 66 wt.% dioctyl sebacate (DOS) and 1 wt.% valinomycin applied to an ion-sensitive electrode (ISE) were investigated. The membrane generated a sensitivity value of -9.864E-08 Ω/log10(CK). Though this data set was affected by both the maximum resolution of the I-V curve tracing device and the thin-membrane effect. Selectivity tests following the IUPAC two-solution method in the presence of Na+ as the interfering ion, provided selectivity values of 0.228 and 0.443 with higher ratios of primary ion to interfering ion resulting in higher selectivity coefficients. Additionally, utilizing an illumination test, dielectric constants of 17.71 and 10.88 were calculated dependent on the amount of solvent used during formulation. Fabrication of the FET device also resulted in developments in metal contact materials, nitride film processing, and physical vapor deposition (PVD) processes. With further improvements, it is possible to fabricate a biocompatible, wearable K+-selective monitor for continuously testing dialysis patients.

Planar electronic devices represent an attractive approach towards roll-to-roll printed electronics without the need for the sequential, precisely aligned, patterning steps inherent in the fabrication of conventional ‘3D’ electronic devices. Self-switching diodes (SSDs) and in-plane-gate field-effect transistors (IPG-FETs) can be patterned using a single process into a substrate precoated with semiconductor.These devices function in depletion mode, requiring the semiconductor to be doped in order for the devices to function. To achieve this, a reliable and controllable method was developed for doping organic semiconducting polymers by the immersion of optimally deposited films in a solution of dopant. The process was shown to apply both semicrystalline and air-stable, amorphous materials indicating that the approach is broadly applicable to a wide range of organic semiconductors.Simultaneously with the development of the doping protocol specialised hot-embossing equipment was designed and constructed and a high-yielding method of patterning the structures of IPG-FETs and SSDs was arrived at. This method allowed for consistent and reliable patterning of features with a minimum line-width of 200nm.Following the development of these doping and patterning processes these were combined to fabricate controllably doped, functioning planar devices. SSDs showed true zero-threshold rectification behaviour with no observed breakdown in the reverse direction up to 100 V. IPG-FETs showed switching behaviour in response to an applied gate potential and were largely free of detectable gate leakage current, verifying the quality of the patterning process.Furthermore, high-performance semiconducting polymer PAAD was synthesised and characterised in field-effect transistors as steps towards its use in planar electronic devices. It was also shown that this material could be doped using the developed immersion doping protocol and that this protocol was compatible with top-gated device architectures and the use of fluoropolymer CYTOP as a dielectric.

Η παρούσα διπλωματική εργασία πραγματεύεται τη μελέτη, το σχεδιασμό, την πρσοομοίωση και την κατασκευή κυκλώματος για την οδήγηση και τον έλεγχο στροφών κινητήρα τύπου DC Brushless.Η εργασία αυτή εκπονήθηκε στο εργαστήριο Ηλεκτρομηχανικής Μετατροπής Ενέργειας του τμήματος Ηλεκτρολόγων Μηχανικών και Τεχνολογίας Ηλεκτρονικών Υπολογιστών. Σκοπός της παρούσας εργασίας είναι η μελέτη και η κατασκευή κυκλώματος τριφασικού αντιστροφέα ισχύος για να επιτύχουμε οδήγηση και έλεγχο κινητήρα τύπου DC Brushless. Ο κινητήρας αυτού του τύπου είναι Σύγχρονος κινητήρας Μόνιμου Μαγνήτη. Για το λόγο αυτό το πρώτο πράγμα που μελετήθηκε στην παρούσα εργασία είναι κάποιες θεμελιώδεις ιδιότητες του μαγνητικού πεδίου, καθώς και τα χαρακτηριστικά των μαγνητικών υλικών που χρησιμοποιούνται σε τέτοιους τύπους κινητήρων. Στην συνέχεια αναλύονται οι κινητήρων Brushless DC ως προς την κατασκευή τους καθώς και τη λειτουργία τους. Παρατίθενται οι εξισώσεις που περιγράφουν τη λειτουργία τους και οι χαρακτηριστικές ροπής-ταχύτητας και επιπλέον γίνεται σύγκριση αυτών με κινητήρες άλλων τύπων. Ακολουθεί η περιγραφή της προσομοίωσης του συστήματος η οποία πραγματοποιήθηκε στο πρόγραμμα προσομοίωσης ηλεκτρικών κυκλωμάτων Simulink του Matlab. Αναλύεται η λογική στην οποία βασιστήκαμε για την προσομοίωση και παρατίθενται οι κυματομορφές της τάσης και του ρεύματος σε διάφορα σημεία του κυκλώματος. Έπειτα γίνεται μια θεωρητική ανάλυση του κυκλώματος του αντιστροφέα που κατασκευάστηκε καθώς και όλων των άλλων κυκλωμάτων και στοιχείων που απαιτήθηκαν για τη λειτουργία της διάταξης. Επιπλέον περιγράφεται η μέθοδος παλμοδότησης που χρησιμοποιήθηκε για την έναυση/σβέση των διακοπτικών στοιχείων ισχύος. Τέλος γίνεται αναλυτική παράθεση του τελικού κυκλώματος που κατασκευάστηκε. Προχωράμε με την περιγραφή των ιδιοτήτων και δυνατοτήτων του μικροελεγκτή που χρησιμοποιήθηκε στην πλακέτα μας, καθώς επίσης και με τη λογική που ακολουθήθηκε κατά τον προγραμματισμό του. Τέλος παραθέτονται τα αποτελέσματα των πειραμάτων και τα παλμογραφήματα που ελήφθησαν κατά τη διεξαγωγή τους. Γίνεται σχολιασμός των αποτελεσμάτων αυτών και αξιολόγηση της κατασκευής. / This thesis is focused in the study and development of a Drive System for a DC Brushless motor. This work was conducted in the Laboratory of Electromechanical Energy Conversion, at the department of Electrical and Computer Engineering, in the University of Patras, Greece. DC Brushless motors, have been used in the last years they are used in a number of applications. They combine all the benefits of a DC motor, such as their operation simplicity and their linear characteristics, avoiding the brushes and the necessary excitation of DC motors, making them a suitable choice for low and medium power applications. The main purpose of this project is the Study and Construction of a Three-Phase Voltage Source Inverter for the control of the performance of a DC Brushless Motor by the implementation of a Scalar control. This thesis began with the simulation of the motor, since it is necessary for the understanding of its dynamic behavior. Then an analysis on the design and construction of the required circuit boards is done. Finally the used microcontroller (dsPIC family) was studied thoroughly, before writing the necessary code(C & assembly) for open and closed loop control. Finally, measurements were taken for the open loop control system. Conclusions were made as far as the behavior of the motor and ways to optimize the control were discussed.

Organic electronics based on π-conjugated semi-conductor raises new technology, such as organic film transistors, e-paper, and organic photovoltaic cells that can be implemented cost-effectively on large-area applications. Currently, the device performance is limited by low charge carrier mobility. Poly(3-hexylthiophene) (P3HT) and organic field effect transistors (OFET) is used as a model to investigate morphology of the organic film and corresponding electronic properties. In this thesis, processing parameters such as boiling points and solubility are controlled to impact the micro- and macro-morphology of the film to enhance the charge transport of the device. Alternative approach to improve ordering of polymer chains and increase in charge transport without post-treatment of P3HT solution is studied. The addition of high boiling good solvent to the relatively low boiling main solvent forms ordered packing of π-conjugated polymers during the deposition process. We show that addition of 1% of dichlorobenzene (DCB) to the chloroform based P3HT solution was sufficient to improve wetting and molecular structures of the film to increase carrier mobility. Systematic study of solvent-assisted re-annealing technique, which has potential application in OFET encapsulation and fabrication of top-contact OFET, is conducted to improve mobility of OFET, and, to suggest a cost-effective processing condition suitable for industrial application. Three process parameters: boiling point, polarity, and solubility are investigated to further understand the trend of film response to the solvent-assisted technique. We report the high boiling non-polar solvents with relatively high RED values promote highest improvement in molecular packing and formulate crystalline structure of the thin film, which increases the device performance.

The idea of utilizing nanomaterials in bio-related applications has been extensively practiced during the recent decades. Magnetic nanoparticles (MPs), especially superparamagnetic iron oxide nanoparticles have been demonstrated as promising candidates for biomedicine. A protective coating process with biocompatible materials is commonly performed on MPs to further enhance their colloidal and chemical stability in the physiological environment. Mesoporous hollow silica is another class of important nanomaterials that are extensively studied in drug delivery area for their ability to carry significant amount of guest molecules and release in a controlled manner. In this study, different synthetic approaches that are able to produce hybrid nanomaterials, constituting both mesoporous hollow silica and magnetite nanoparticles, are described. In a two-step approach, pre-synthesized magnetite nanoparticles are either covalently conjugated to the surface of polystyrene beads and coated with silica or embedded/enclosed in the porous shell during a nanosized CaCO3 templated condensation of silica precursors, followed by acid dissolution to generate the hollow structure. It was demonstrated that the hollow interior is able to load large amount of hydrophobic drugs such as ibuprofen while the mesoporous shell is capable of prolonged drug. In order to simplify the fabrication procedure, a novel in-situ method is developed to coat silica surface with magnetite nanoparticles. By refluxing the iron precursor with mesoporous hollow silica nanospheres in polyamine/polyalcohol mixed media, one is able to directly form a high density layer of magnetite nanoparticles on silica surface during the synthesis, leaving reactive amine groups for further surface functionalization such as fluorescence conjugation. This approach provides a convenient synthesis for silica nanostructures with promising potential for drug delivery and multimodal imaging. In addition to nanoparticles, nanowires also benefit the research and development of instruments in clinical diagnosis. Semiconductive nanowires have demonstrated their advantage in the fabrication of lab-on-a-chip devices to detect many charge carrying molecules such as antibody and DNA. In our study, In2O3 and silicon nanowire based field effect transistors were fabricated through bottom-up and top-down approaches, respectively, for ultrasensitive bio- detection of toxins such as ricin. The specific binding and non-specific interaction of nanowires with antibodies were also investigated.