Atrial fibrillation is a cardiac condition in which the heart rate is abnormally fast and/or irregular. While not yet proven to be fatal on its own, it severely increases the probability of developing further medical conditions including a five times higher risk of getting stroke. The prevalence has, over the past decades, increased significantly across the world and was in 2014 approximated at roughly 2% in the European population. Though, this number is expected to further increase in the coming years and decades. Therefore, in order to reduce suffering and save lives, it is vital that there is an efficient way of treating this condition. Current treatment methods include medicine, cardioversion, and tissue ablation. This thesis focuses on tissue ablation, more particularly cryoballoon ablation, which is a minimally invasive procedure in which a cryoballoon catheter is guided through a blood vessel (generally accessed through an incision made in the groin area) to the heart. When inside the atrial chambers the balloon can be inflated, put into contact with the faulty tissue and then be injected with liquid nitrous oxide which vaporizes and freezes said tissue isolating the currents causing the irregular heartbeat. This thesis aims to attach flexible electronics to the outside of the cryoballoon, which should then be able to inform the operator that adequate contact has been achieved before freezing, thereby increasing the probability of successful ablation. Three prototypes were created using polyurethane balloons, flexible circuit boards and a biocompatible, flexible cyanoacrylate adhesive. The flexible circuit boards were arranged in different patterns for each prototype to see which configuration would best suit the application. It was found that narrow strips (single trace) aligned axially and spaced evenly along the circumference best accomplished the goal. The traces did, however, not adhere as well to the balloon as was hoped which likely was due to user error during the gluing procedure but a further investigation may be desired to ensure that the materials and adhesive are compatible. / Förmaksflimmer är ett hjärtfel som gör att hjärtslagen blir ovanligt snabba och/eller oregelbundna. Trots att det inte bevisats vara direkt dödligt än, ökar det kraftigt risken för att utveckla ytterligare medicinska besvär, bland annat fem gånger större risk att drabbas av stroke. Utbredningen av förmaksflimmer har under de senaste decennierna ökat avsevärt över hela världen och under 2014 uppskattades det att ungefär 2 % av den europeiska befolkning var drabbade. Den här siffran förväntas dock fortsätta öka under de kommande åren och decennierna. Därför, för att i största mån lindra smärta samt förhindra dödsfall, är det mycket viktigt att det finns ett effektivt sätt att behandla tillståndet. I nuläget innefattas behandling av medicin, elektrokonvertering eller vävnadsablation. Det här examensarbetet fokuserar på ablation, närmare bestämt kryoballongsablation, vilket är ett minimalinvasivt ingrepp som innebär att en kryoballongskateter förs in genom en blodådra (ofta via ett snitt i ljumsken) in i hjärtat. Väl inne i förmakskammarna kan ballongen blåsas upp, läggas emot den felaktiga vävnaden och sedan fyllas med flytande kväveoxid som förångas och fryser vävnaden vilket isolerar strömmarna som ger upphov till den felaktiga hjärtrytmen. Målet med det här examensarbetet är att fästa flexibla kretskort på utsidan av dessa kryoballonger, vilka då ska kunna känna av fysisk kontakt med vävnaden och informera operatören om detta innan frysningen sker. Därmed bör sannolikheten för lyckad ablation öka. Tre prototyper tillverkades med polyuretanballonger, flexibla kretskort och ett biokompatibelt, flexibelt cyanoakrylatlim. Kretskorten arrangerades i olika mönster för respektive prototyper för att undersöka vilken konfiguration som skulle passa ändamålet bäst. Det visade sig att smala kretskort placerade längs med ballongen axiellt och jämnt utspridda längs med omkretsen gav bäst resultat. Däremot höll inte limmet så bra som förväntat vilket troligtvis handlar om användarfel vid limningen men en vidare utredning kan vara att önska för att säkerställa att limmet är kompatibelt med övriga material.

The outstanding electrical and mechanical properties of single-walled carbon nanotubes (SWCNTs) may offer solutions to realizing high-mobility and high-bendability thin-film transistors (TFTs) for the emerging flexible electronics. This thesis aims to develop low-cost ink-jet printing techniques for high-performance TFTs based on pristine SWCNTs. The main challenge of this work is to suppress the effects of “metallic SWCNT contamination” and improve the device electrical performance. To this end, this thesis entails a balance between experiments and simulations.   First, TFTs with low-density SWCNTs in the channel region are fabricated by utilizing standard silicon technology. Their electrical performance is investigated in terms of throughput, transfer characteristics, dimensional scaling and dependence on electrode metals. The demonstrated insensitivity of electrical performance to the electrode metals lifts constrains on choosing metal inks for ink-jet printing.   Second, Monte Carlo models on the basis of percolation theory have been established, and high-efficiency algorithms have been proposed for investigations of large-size stick systems in order to facilitate studies of TFTs with channel length up to 1000 times that of the SWCNTs. The Monte Carlo simulations have led to fundamental understanding on stick percolation, including high-precision percolation threshold, universal finite-size scaling function, and dependence of critical conductivity exponents on assignment of component resistance. They have further generated understanding of practical issues regarding heterogeneous percolation systems and the doping effects in SWCNT TFTs.   Third, Monte Carlo simulations are conducted to explore new device structures for performance improvement of SWCNT TFTs. In particular, a novel device structure featuring composite SWCNT networks in the channel is predicted by the simulation and subsequently confirmed experimentally by another research group. Through Monte Carlo simulations, the compatibility of previously-proposed long-strip-channel SWCNT TFTs with ink-jet printing has also been demonstrated.   Finally, relatively sophisticated ink-jet printing techniques have been developed for SWCNT TFTs with long-strip channels. This research spans from SWCNT ink formulation to device design and fabrication. SWCNT TFTs are finally ink-jet printed on both silicon wafers and flexible Kapton substrates with fairly high electrical performance. / QC 20100910

This thesis examines strategies to exploit existing materials and techniques to advance organic thin film transistor (OTFT) technology in device performance, device manufacture, and device integration. To enhance device performance, optimization of plasma enhanced chemical vapor deposited (PECVD) gate dielectric thin film and investigation of interface engineering methodologies are explored. To advance device manufacture, OTFT fabrication strategies are developed to enable organic circuit integration. Progress in device integration is achieved through demonstration of OTFT integration into functional circuits for applications such as active-matrix displays and radio frequency identification (RFID) tags. OTFT integration schemes featuring a tailored OTFT-compatible photolithography process and a hybrid photolithography-inkjet printing process are developed. They enable the fabrication of fully-patterned and fully-encapsulated OTFTs and circuits. Research on improving device performance of bottom-gate bottom-contact poly(3,3'''-dialkyl-quarter-thiophene) (PQT-12) OTFTs on PECVD silicon nitride (SiNx) gate dielectric leads to the following key conclusions: (a) increasing silicon content in SiNx gate dielectric leads to enhancement in field-effect mobility and on/off current ratio; (b) surface treatment of SiNx gate dielectric with a combination of O2 plasma and octyltrichlorosilane (OTS) self-assembled monolayer (SAM) delivers the best OTFT performance; (c) an optimal O2 plasma treatment duration exists for attaining highest field-effect mobility and is linked to a “turn-around” effect; and (d) surface treatment of the gold (Au) source/drain contacts by 1-octanethiol SAM limits mobility and should be omitted. There is a strong correlation between the electrical characteristics and the interfacial characteristics of OTFTs. In particular, the device mobility is influenced by the interplay of various interfacial mechanisms, including surface energy, surface roughness, and chemical composition. Finally, the collective knowledge from these investigations facilitates the integration of OTFTs into organic circuits, which is expected to contribute to the development of new generation of all-organic displays for communication devices and other pertinent applications. A major outcome of this work is that it provides an economical means for organic transistor and circuit integration, by enabling use of the well-established PECVD infrastructure, yet not compromising the performance of electronics.

This thesis examines strategies to exploit existing materials and techniques to advance organic thin film transistor (OTFT) technology in device performance, device manufacture, and device integration. To enhance device performance, optimization of plasma enhanced chemical vapor deposited (PECVD) gate dielectric thin film and investigation of interface engineering methodologies are explored. To advance device manufacture, OTFT fabrication strategies are developed to enable organic circuit integration. Progress in device integration is achieved through demonstration of OTFT integration into functional circuits for applications such as active-matrix displays and radio frequency identification (RFID) tags. OTFT integration schemes featuring a tailored OTFT-compatible photolithography process and a hybrid photolithography-inkjet printing process are developed. They enable the fabrication of fully-patterned and fully-encapsulated OTFTs and circuits. Research on improving device performance of bottom-gate bottom-contact poly(3,3'''-dialkyl-quarter-thiophene) (PQT-12) OTFTs on PECVD silicon nitride (SiNx) gate dielectric leads to the following key conclusions: (a) increasing silicon content in SiNx gate dielectric leads to enhancement in field-effect mobility and on/off current ratio; (b) surface treatment of SiNx gate dielectric with a combination of O2 plasma and octyltrichlorosilane (OTS) self-assembled monolayer (SAM) delivers the best OTFT performance; (c) an optimal O2 plasma treatment duration exists for attaining highest field-effect mobility and is linked to a “turn-around” effect; and (d) surface treatment of the gold (Au) source/drain contacts by 1-octanethiol SAM limits mobility and should be omitted. There is a strong correlation between the electrical characteristics and the interfacial characteristics of OTFTs. In particular, the device mobility is influenced by the interplay of various interfacial mechanisms, including surface energy, surface roughness, and chemical composition. Finally, the collective knowledge from these investigations facilitates the integration of OTFTs into organic circuits, which is expected to contribute to the development of new generation of all-organic displays for communication devices and other pertinent applications. A major outcome of this work is that it provides an economical means for organic transistor and circuit integration, by enabling use of the well-established PECVD infrastructure, yet not compromising the performance of electronics.

Inkjet-printing is a technology which has for the last decade been exploited to fabricate flexible RF components such as antennas and planar circuit elements. However, the limitations of feature size and single layer fabrication prevented the demonstration of compact, and high efficiency RF components operating above 10 GHz into the mm-Wave regime which is critical to silicon integration and fully-printed modules. To overcome these limitations, a novel vertically-integrated fully inkjet-printed process has been developed and characterized up to the mm-Wave regime which incorporates up to five highly conductive metal layers, variable thickness dielectric layers ranging from 200 nm to 200 um, and low resistance through-layer via interconnects. This vertically-integrated inkjet printed electronics process, tagged VIPRE, is a first of its kind, and is utilized to demonstrate fully additive RF capacitors, inductors, antennas, and RF sensors operating up to 40 GHz. In this work, the first-ever fully inkjet printed multi-layer RF devices operating up to 40 GHz with high-performance are demonstrated, along with a demonstration of the processing techniques which have enabled the printing of multi-layer RF structures with multiple metal layers, and dielectric layers which are orders of magnitude thicker than previoulsy demonstrated inkjet-printed structures. The results of this work show the new possibilities in utilizing inkjet printing for the post-processing of high-efficiency RF inductors, capacitors, and antennas and antenna arrays on top of silicon to reduce chip area requirements, and for the production of entirely printed wireless modules.

This thesis investigates inkjet printing of fully-integrated modules fabricated on organic substrates as a system-level solution for ultra-low-cost and eco-friendly mass production of wireless sensor modules. Prototypes are designed and implemented in both traditional FR-4 substrate and organic substrate. The prototype on organic substrate is referred to as a Smart Wireless Integrated Module (SWIM). Parallels are drawn between FR-4 manufacturing and inkjet printing technology, and recommendations are discussed to enable the potential of inkjet printing technology. Finally, this thesis presents novel applications of SWIM technology in the area of wearable and implantable electronics. Chapter 1 serves as an introduction to inkjet printing technology on organic substrates, wireless sensor networks (WSNs), and the requirements for low-power consumption, low-cost, and eco-friendly technology. Chapter 2 discusses the design of SWIM and its implementation using traditional manufacturing techniques on FR-4 substrate. Chapter 3 presents a benchmark prototype of SWIM on paper substrate. Challenges in the manufacturing process are addressed, and solutions are proposed which suggest future areas of research in inkjet printing technology. Chapter 4 presents novel applications of SWIM technology in the areas of implantable and wearable electronics. Chapter 5 concludes the thesis by discussing the importance of this work in creating a bridge between current inkjet printing technology and its future.

In this thesis, we present a graphical computer-aided design (CAD) environment for the design, analysis and layout of printed electronic batteries in the first phase and the parasitic extraction of the connecting wires in the second phase. The primary motivation of our work is that this prototyping software tool so far does not exist. Our tool has been integrated within the existing CAD tool which allows quick prototyping and simplifies the interface between the system designer and the device manufacturer. This tools supports the schematic and layout entry, rule checking and netlist generation. The first phase of the device synthesis modelling is based on Enfucell printed batteries, by which using the CAD tool, the shape of the battery is optimized and designed to fit the product and is able to simulate the performance during the optimization, whereas the second phase is the parasitic extraction using an extracting tool named fasthenry, which is integrated to our CAD tool to extract unwanted resistance and inductance within the shared wires between the battery and other devices. We believe that the availability of this tool is useful to the CAD community for novel ideas in the circuit design for flexible hybrid electronics. / +46764354255, +46722694942

This dissertation studies the manipulation of particles using acoustic stimulation for applications in microfluidics and templating of devices. The term particle is used here to denote any solid, liquid or gaseous material that has properties, which are distinct from the fluid in which it is suspended. Manipulation means to take over the movements of the particles and to position them in specified locations. Using devices, microfabricated out of silicon, the behavior of particles under the acoustic stimulation was studied with the main purpose of aligning the particles at either low-pressure zones, known as the nodes or high-pressure zones, known as anti-nodes. By aligning particles at the nodes in a flow system, these particles can be focused at the center or walls of a microchannel in order to ultimately separate them. These separations are of high scientific importance, especially in the biomedical domain, since acoustopheresis provides a unique approach to separate based on density and compressibility, unparalleled by other techniques. The study of controlling and aligning the particles in various geometries and configurations was successfully achieved by controlling the acoustic waves. Apart from their use in flow systems, a stationary suspended-particle device was developed to provide controllable light transmittance based on acoustic stimuli. Using a glass compartment and a carbon-particle suspension in an organic solvent, the device responded to acoustic stimulation by aligning the particles. The alignment of light-absorbing carbon particles afforded an increase in visible light transmittance as high as 84.5%, and it was controlled by adjusting the frequency and amplitude of the acoustic wave. The device also demonstrated alignment memory rendering it energy-efficient. A similar device for suspended-particles in a monomer enabled the development of electrically conductive films. These films were based on networks of conductive particles. Elastomers doped with conductive metal particles were rendered surface conductive at particle loadings as low as 1% by weight using acoustic focusing. The resulting films were flexible and had transparencies exceeding 80% in the visible spectrum (400-800 nm) These films had electrical bulk conductivities exceeding 50 S/cm.

This thesis introduces, for the first time, a novel 4-bit, metal-oxide-metal (MOM) digital capacitor switching array (MOMDCSA) which has been implemented into a wideband CMOS voltage controlled oscillator (VCO) for 5 GHz WiMAX/WLAN applications. The proposed MOMDCSA is added both in series and parallel to nMOS varactors. For further gain linearity, a wider tuning range and minor phase noise variations, this varactor bank is connected in parallel to four nMOS varactor pairs, each of which is biased at a different voltage. Thus, VCO tuning gain reduces and optimal phase noise variation is obtained across a wide range of frequencies. Based on this premise, a wideband VCO is achieved with low phase noise variation of less than 4.7 dBc/Hz. The proposed VCO has been designed using UMC 130 nm CMOS technology. It operates from 3.45 GHz to 6.23 GHz, with a phase noise of -133.80 dBc/Hz at a 1 MHz offset, a figure of merit (FoM) of -203.5 dBc/Hz. A novel microstrip low-phase noise oscillator is based on a left-handed (LH) metamaterial bandpass filter which is embedded in the feedback loop of the oscillator. The oscillator is designed at a complex quality factor Qsc peak frequency, to achieve excellent phase noise performance. At a centre frequency of 2.05 GHz, the reported oscillator demonstrates, experimentally, a phase noise of -126.7 dBc/Hz at a 100 kHz frequency offset and a FoM of -207.2 dBc/Hz at a 1 MHz frequency offset. The increasing demands have been placed on the electromagnetic compatibility performance of VCO devices is crucial. Therefore, this thesis extends the potential of highly flexible and conductive graphene laminate to the application of electromagnetic interference (EMI) shielding. Graphene nanoflake-based conductive ink is printed on paper, and then it is compressed to form graphene laminate with a conductivity of 0.43×105 S/m. Shielding effectiveness is experimentally measured at above 32 dB as being between 12GHz and 18GHz, even though the thickness of the graphene laminate is only 7.7µm. This result demonstrates that graphene has great potential for offering lightweight, low-cost, flexible and environmentally friendly shielding materials which can be extended to offering required shielding from electromagnetic interference (EMI), not only for VCO phase noise optimisation, but also for sensitive electronic devices.

Cette thèse est consacrée à l’évaluation du potentiel d'un semi-conducteur 2D, le disulfure de molybdène (MoS2) monocouche, en tant que matériau de canal de type N pour l’électronique flexible. Ce semi-conducteur d'épaisseur nanométrique est stable chimiquement, robuste mécaniquement et possède une bande interdite directe de 1,9 eV. Le travail réalisé couvre en premier lieu la synthèse de monocouches de MoS2 par dépôt chimique en phase vapeur (CVD) et leur caractérisation. Les monocouches synthétisées ont été intégrées avec succès en tant que matériau de canal dans des transistors de type N stables à l'air. L'étude a mis en évidence l'impact sur les performances de l'environnement et des résistances aux interfaces métal/MoS2. Des mobilités électroniques de 20 cm²/(V.s) associées à des rapports ION/IOFF > 106 ont été obtenus. Ces performances ont permis l’intégration du MoS2 monocouche dans des transistors flexibles. Ce travail a été combiné à d’importants efforts sur l’intégration de films minces organiques électrogreffés en tant que diélectrique de grille, y compris sur substrat flexible. Dans un domaine encore jeune mais en rapide évolution, ces travaux montrent la viabilité de l’option MoS2 monocouche pour l’électronique flexible, notamment en combinaison avec les diélectriques minces organiques. / This PhD thesis is dedicated to the assessment of the potential of monolayers of molybdenum disulfide (MoS2) as a N-type channel material for flexible electronics. This 2D semiconductor of atomic-scale thickness is chemically stable, mechanically robust and has a direct bandgap of 1.9 eV. This work includes the synthesis of MoS2 monolayers by Chemical Vapor Deposition (CVD) and the characterization of this material. The MoS2 monolayers were integrated in air-stable N-type transistors. The study highlighted the impact on the device performances of both the environment and the resistances at the MoS2/metal interfaces. Electronic mobilities of 20 cm²/(V.s) in combination with ION/IOFF ratios > 106 were achieved. These performances allowed integrating MoS2 monolayers in flexible transistors. This work was combined with the study of electrografted organic ultrathin films used as gate dielectrics and their integration in MoS2 transistors. This thesis shows that MoS2 monolayers are a viable option for flexible electronics operating at low bias, in particular when they are associated with ultrathin organic dielectrics.