Introducing the notion of transformational silicon electronics has paved the way for integrating various applications with silicon-based, modern, high-performance electronic circuits that are mechanically flexible and optically semitransparent. While maintaining large-scale production and prototyping rapidity, this flexible and translucent scheme demonstrates the potential to transform conventionally stiff electronic devices into thin and foldable ones without compromising long-term performance and reliability. In this work, we report on the fabrication and characterization of reversibly bistable flexible electronic switches that utilize flexible n-channel metal-oxide-semiconductor field-effect transistors. The transistors are fabricated initially on rigid (100) silicon substrates before they are peeled off. They can be used to control flexible batches of light-emitting diodes, demonstrating both the relative ease of scaling at minimum cost and maximum reliability and the feasibility of integration. The peeled-off silicon fabric is about 25 µm thick. The fabricated devices are transferred to a reversibly bistable flexible platform through which, for example, a flexible smartphone can be wrapped around a user’s wrist and can also be set back to its original mechanical position. Buckling and cyclic bending of such host platforms brings a completely new dimension to the development of flexible electronics, especially rollable displays.

The majority of research on Organic Light-Emitting Diodes (OLEDs) has focused on a top-cathode, conventional bottom-emitting architecture. Yet bottom-cathode, inverted top-emitting OLEDs offer some advantages from an applications point of view. In this thesis, the development of high performance green electroluminescent inverted top-emitting diodes is first presented. The challenges in producing an inverted structure are discussed and the advantages of high efficiency inverted top-emitting OLEDs are provided. Next, the transition to a stacked architecture with separate orange and blue emitting layers is demonstrated, allowing for white emission. The pros and cons of the existing device structure is described, with an eye to future developments and proposed follow-up research.

Despite the widespread interest in graphene electronics over the last decade, high-performance graphene field-effect transistors (GFETs) on flexible substrates have been rarely achieved, even though this atomic sheet is widely understood to have greater prospects for flexible electronic systems. In this work, we investigate the realization of high-performance graphene field effect transistors implemented on flexible plastic substrates. The optimum device structure for high-mobility and high-bendability is suggested with experimental comparison among diverse structures including top-gate GFETs (TG-GFETs), single/multi-finger embedded-gate GFETs with high-k dielectrics (EG-highk/GFETs), and embedded-gate GFETs with hexagonal boron nitride (h-BN) dielectrics. Flexible graphene transistors with high-k dielectric afforded intrinsic gain, maximum carrier mobility of 8,000 cm²/V·s, and importantly 32 GHz cut-off frequency. Mechanical studies reveal robust transistor performance under repeated bending down to 0.7 mm bending radius whose tensile strain corresponds to 8.6%. Passivation techniques, with robust mechanical and chemical protection in order to operate under harsh environments, for embedded-gate structures are also covered. The integration of functional coatings such as highly hydrophobic fluoropolymers combined with the self-passivation properties of the polyimide substrate provides water-resistant protection without compromising flexibility, which is an important advancement for the realization of future robust flexible systems based on graphene. / text

Advancements in electronics research triggered a vision of a more connected world, touching new unprecedented fields to improve the quality of our lives. This vision has been fueled by electronic giants showcasing flexible displays for the first time in consumer electronics symposiums. Since then, the scientific and research communities partook on exploring possibilities for making flexible electronics. Decades of research have revealed many routes to flexible electronics, lots of opportunities and challenges. In this work, we focus on our contributions towards realizing a complimentary approach to flexible inorganic high performance electronic memories on silicon. This approach provides a straight forward method for capitalizing on the existing well-established semiconductor infrastructure, standard processes and procedures, and collective knowledge. Ultimately, we focus on understanding the reliability and functionality anomalies in flexible electronics and flexible solid state memory built using the flexible silicon platform. The results of the presented studies show that: (i) flexible devices fabricated using etch-protect-release approach (with trenches included in the active area) exhibit ~19% lower safe operating voltage compared to their bulk counterparts, (ii) they can withstand prolonged bending duration (static stress) but are prone to failure under dynamic stress as in repeated bending and re-flattening, (iii) flexible 3D FinFETs exhibit ~10% variation in key properties when exposed to out-of-plane bending stress and out-of-plane stress does not resemble the well-studied in-plane stress used in strain engineering, (iv) resistive memories can be achieved on flexible silicon and their basic resistive property is preserved but other memory functionalities (retention, endurance, speed, memory window) requires further investigations, (v) flexible silicon based PZT ferroelectric capacitors exhibit record polarization, capacitance, and endurance (1 billion write-erase cycles) values for flexible FeRAMs, uncompromised retention ability under varying dynamic stress, and a minimum bending radius of 5 mm, and (vi) the combined effect of 225 °C, 260 MPa tensile stress, 55% humidity under ambient conditions (21% oxygen), led to 48% reduction in switching coercive fields, 45% reduction in remnant polarization, an expected increase of 22% in relative permittivity and normalized capacitance, and reduced memory window (20% difference between switching and non-switching currents at 225 °C).

Compliant electronics are an emerging class of electronics which offer physical flexibility in their structure. Such mechanical flexibility opens up opportunities for wide ranging applications. Nonetheless, compliant electronics which can be functional in unusual environments are yet to be explored. Unusual environment can constitute a harsh environment where temperature and/or pressure is much higher or lower than the usual room temperature and/or pressure. Unusual environment can be an aquatic environment, such as ocean/sea/river/pond, industrial processing related liquid and bodily fluid environment, external or internal for implantable electronics. Finally, unusual environment can also be conditions when extreme physical deformation is anomalously applied to compliant electronics in order to understand their performance and reliability under such extraordinary mechanical deformations. Therefore, in this thesis, three different aspects of compliant electronics are thoroughly studied, addressing challenges of material selection/optimization for unusual environment applications, focusing on electrical performance and mechanical flexible behavior. In the first part, performance of silicon-based high-performance complementary metal oxide semiconductor (CMOS) devices are studied under severe mechanical deformation. Next, a high-volume manufacturing compatible solution is offered to reduce the usage of toxic chemicals in semiconductor device fabrication. To accomplish this, Germanium Dioxide (GeO2) is simultaneously used as transient material and dielectric layer to realize a dissolvable/bioresorbable transient electronic system which can be potentially used for implantable electronics. Finally, wide bandgap semiconductor Gallium Nitride is studied to understand its mechanical flexibility under high temperature conditions. In summary, this research contributes to the advancement of material selection, optimization and process development towards achieving compliant and transient devices for novel applications in unusual environments.

Wearables for health monitoring are rapidly advancing as evidenced by the number of wearable products on the market. More recently, the US Food and Drug Administration approved the Apple Watch for heart monitoring, indicating that wearables are going to be a part of our lives sooner than expected. However, wearables are still based on rigid, conventional electronic materials and fabrication procedures. The use of flexible conducting materials fabricated on flexible substrates allows for more comprehensive health monitoring because of the seamless integration and conformability of such devices with the human skin. Many materials can be used to fabricate flexible electronics such as thin metals, liquid metals, conducting polymers, and 1D and 2D materials. Ti3C2 MXene is a promising 2D material that shows flexibility as well as desirable electronic properties. Ti3C2 MXene is easily processable in aqueous solutions and can be an excellent functional ink for inkjet printing. Here we report the fabrication and the properties of Ti3C2 MXene films inkjet-printed from aqueous dispersions with a nonionic surfactant. The films are uniform and formed with only a few layers on glass and tattoo paper. The MXene films printed on tattoo are used to record ECG signals with comparable signal-to-noise ratio to commercial Ag/AgCl electrodes despite the absence of gels to lower skin-contact impedance. Due to their high charge storage capacity and mixed (ionic and electronic) conductivity, inkjet-printed MXene films open up a new avenue for applications beyond health monitoring.

This thesis reports on the design, fabrication, and testing of state-of-the-art, high-performance inverted top-emitting organic light-emitting diodes (OLEDs). The vast majority of research reports focuses on a device architecture referred to as a conventional OLED which has its anode on the bottom of the device and its cathode on the top. Moreover, most conventional OLEDs are bottom-emitting such that light exits the structure through both a semitransparent bottom electrode of indium-tin oxide and a glass substrate. The particular device architecture developed in this thesis is one in which the devices are inverted (i.e. their cathode is on the bottom as opposed to on top) and top-emitting. Despite the advantages that inverted top-emitting OLEDs possess over conventional bottom-emitting OLEDs, their development has been relatively slow. This is because inverted OLEDs have traditionally been hampered by the difficulty of injecting electrons effectively into the device. In this work, a novel method of injecting electrons from bottom cathodes into inverted OLEDs is discovered. In several previous reports, bottom Al/LiF cathodes had been used with the electron-transport material Alq3 to produce inverted OLEDs, but the resulting inverted OLEDs exhibited inferior performance to conventional OLEDs with top cathodes of Al/LiF. A new route for the development of highly efficient inverted OLEDs is shown through the use of electron-transport materials with high electron mobility values and large electron affinities. After systematic device optimization, inverted top-emitting OLEDs are demonstrated that currently define the state-of-the-art in terms of device efficiency. Optimized green and blue inverted top-emitting OLEDs are demonstrated that have a current efficacies of 92.5 cd/A and 32.0 cd/A, respectively, at luminance values exceeding 1,000 cd/m2. Finally, this discovery has enabled the development of the first stacked inverted top-emitting OLEDs ever made, combining all of the advantages offered by an inverted architecture, a top-emissive design, and a stacked structure. These OLEDs have a current efficacy of 200 cd/A at a luminance of 1011 cd/m2, attaining a maximum current efficacy of 205 cd/A at luminance of 103 cd/m2.

Applications such as device interconnects require thick, patterned films that are currently produced by screen printing pastes consisting of metallic particles and subsequently sintering the films. For Ag films, achieving adequate electrical conductivity requires sintering temperatures in excess of 700˚C. New applications require highly conductive films that can be processed at lower processing temperatures. Although sintering temperatures have been reduced by utilizing finer nanoparticles (NPs) in place of conventional micron-size particles (MPs), realization of theoretically achievable sintering kinetics is yet to be achieved. The major factors that inhibit NP sintering are 1) the presence of organic molecules on the NP surfaces, 2) the dominance of the non-densifying surface diffusion over grain boundary or lattice diffusion 3) agglomeration of NPs, and 4) low initial density of the NPs. Here, we report a film fabrication technique that is capable of eliminating these deleterious factors and produces near fully dense Ag films that exhibit an order of magnitude higher conductivity when compared to other film fabrication techniques at processing temperatures of 150 – 250 °C. The observed results establish the benefits of NP diffusion kinetics to be far more profound when the deleterious factors to sintering are eliminated. The sintering behavior exhibits two distinct temperature regimes – one above 150 ᵒC where grain boundary diffusion-dominated densification is dominant and one below 100 ᵒC where surface diffusion-dominated coarsening is dominant. An analytical model is developed by fitting the experimental data to the existing models of simultaneous densification and grain growth, and combining this model with existing models of the dependence of conductivity on grain boundary scattering and pore scattering. The combined model successfully describes the evolution of density, grain size and conductivity of nanoparticulate films as a function of annealing treatment, with reasonable accuracy. The model was also used to evaluate the effect of initial NP size and initial relative density of films on the final sintered properties and conductivity of films. / text

Inorganic material based electronics and photonics on unconventional substrates have shown tremendous unprecedented applications, especially in areas that traditional wafer based electronics and photonics are unable to cover. These areas range from flexible and conformal consumer products to biocompatible medical devices. This thesis presents the research on single crystal silicon nanomembrane photonics on different substrates, especially flexible substrates. A transfer method has been developed to transfer silicon nanomembrane defect-freely onto glass and flexible polyimide substrates. Using this method, intricate single crystal silicon nanomembrane device, such as photonic crystal microcavity, has been transferred onto flexible substrates. To test the device, subwavelength grating couplers are designed and implemented to couple light in and out of the transferred waveguides with high coupling efficiency. The cavity shows a quality factor ~ 9000 with water cladding and ~30000 with glycerol cladding, which is comparable to the same cavity demonstrated on silicon-on-insulator platform, indicating the high quality of the transferred silicon nanomembrane. The device could be bended to a radius less than 15 mm. The experiments show that the resonant wavelength shifts to longer wavelength under tensile stress, while it shifts to shorter wavelength under compressive stress. The sensitivity of the cavity is ~70 nm/RIU, which is independent of bending radius. This demonstration opens vast possibilities for a whole new range of high performance, light-weight and conformal silicon photonic devices. The techniques and devices (e.g. wafer bonding, stamp printing, subwavelength grating couplers, and modulator) generated in the research can also be beneficial for other research fields. / text

Smart skins are integrating an increasing number of functionalities in order to improve the interaction between the systems they equip and their ambient environment. Here we have developed an electromechanical soft actuator with controlled surface texture due to applied thermal gradient via electrical voltage. The device was fabricated and integrated with optimized process parameters for a prepared heater element [doped PEDOT: PSS (poly-(3, 4 ethylenedioxythiophene): poly (styrene sulfonic acid))], a soft actuator (Ecoflex 00-50/ethanol) and overall packaging case [PDMS (polydimethylsiloxane)]. To study a potential application of the proposed smart skin, we analyze the fluid drag reduction in a texture controlled water flow unit. As a result, we obtained a reduction of approximately 14% in the skin drag friction coefficient during the actuation. We conclude that the proposed soft actuator device is a preferred option for a texture-controlled skin that reduces the skin drag friction coefficient.