Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. Both designs have a non-selectivelydeposited SiGeC base doped with boron and a poly-crystallineemitter doped with phosphorous. Selective epitaxial growth of the collector layer has beendeveloped by using a reduced pressure chemical vapor deposition(RPCVD) technique. The incorporation of phosphorous and defectformation during selective deposition of these layers has beenstudied. A major problem of phosphorous-doping during selectiveepitaxy is segregation. Different methods, e.g. chemical orthermal oxidation, are shown to efficiently remove thesegregated dopants. Chemical-mechanical polishing (CMP) hasalso been used as an alternative to solve this problem. The CMPstep was successfully integrated in the HBT process flow. Epitaxial growth of Si1-x-yGexCy layers for base layerapplications in bipolar transistors has been investigated indetail. The optimization of the growth parameters has beenperformed in order to incorporate carbon substitutionally inthe SiGe matrix without increasing the defect density in theepitaxial layers. The thermal stability of npn SiGe-based heterojunctionstructures has been investigated. The influence of thediffusion of dopants in SiGe or in adjacent layers on thethermal stability of the structure has also been discussed. SiGeC-based transistors with both non-selectively depositedcollector and selectively grown collector have been fabricatedand electrically characterized. The fabricated transistorsexhibit electrostatic current gain values in the range of 1000-2000. The cut-off frequency and maximum oscillation frequencyvary from 40-80 GHz and 15-30 GHz, respectively, depending onthe lateral design. The leakage current was investigated usinga selectively deposited collector design and possible causesfor leakage has been discussed. Solutions for decreasing thejunction leakage are proposed. <b>Key words:</b>Silicon-Germanium-Carbon (SiGeC),Heterojunction bipolar transistor (HBT), chemical vapordeposition (CVD), selective epitaxy, non-selective epitaxy,collector design, high-frequency measurement, dopantsegregation, thermal stability.

In this thesis, RF sections of a multi tier instantaneous frequency measurement (IFM) receiver which can operate in 2 &ndash / 18 GHz frequency band is designed, simulated and partially realized. The designed structure uses one coarse tier, three medium tiers and one fine tier for frequency discrimination. A novel reflective phase shifting technique is developed which enables the design of very wideband phase shifters using stepped cascaded transmission lines. Compared to the classical phase shifters using coupled transmission lines, the new approach came out to be much easier to design and fabricate with much better responses. This phase shifting technique is used in coarse and medium tiers. In fine frequency measurement tier, I/Q discriminator approach is used because reflective phase shifters would necessitate unacceptably long delay lines. Two I/Q discriminators are designed and fabricated using Lange directional couplers that operate in 2-6 GHz and 6-18 GHz, resulting in satisfactory response. Additionally, 6 GHz HP and 6 GHz LP distributed filters are designed and fabricated to be used for these I/Q discriminators in fine tier. In order to eliminate possible ambiguities in coarse tier, a distributed element LP-HP diplexer with 10 GHz crossover frequency is designed and fabricated successfully to be used for splitting the frequency spectrum into 2-10 GHz and 10-18 GHz to ease the design and realization problems. Three power dividers operating in the ranges 2-18 GHz, 2-6 GHz and 6-18 GHz are designed for splitting incoming signals into different branches. All of these dividers are also fabricated with satisfactory response. The fabricated components are all compact and highly reproducible. The designed IFM can tolerate 48 degrees phase margin for resolving ambiguity in the tiers while special precautions are taken in fine tier to help ambiguity resolving process also. The resulting IFM provides a frequency resolution below 1 MHz in case of using an 8-bit sampler with a frequency accuracy of 0.28 MHz rms for 0 dB input SNR and 20 MHz video bandwidth.

Microwave limiting amplifiers are the key components of Instantaneous Frequency Measurement (IFM) systems. Limiting amplifiers provide constant output power level in a wide input dynamic range and over a broad frequency band. Moreover, limiting amplifiers are high gain devices that are used to bring very low input power levels to a constant output power level. Besides, limiting amplifiers are required to provide minimum small signal gain ripple in order not to reduce the sensitivity of the IFM system over the operating frequency band. In this thesis work, a high gain, medium power, 2-18 GHz limiting amplifier module is designed, simulated, fabricated and measured. First, a 3-stage cascaded amplifier with 27 dB small signal gain is designed and fabricated. The 3-stage amplifier is composed of a novel cascaded combination of negative feedback and distributed amplifiers that provides the minimum small signal gain ripple and satisfactory input and output return losses inside 2-18 GHz frequency band. Then, the designed two 3-stage amplifiers and one 4-stage amplifier are cascaded to constitute a limiting amplifier module with minimum 80 dB small signal gain. The designed 10-stage limiting amplifier module also includes an analog voltage controllable attenuator to be used for compensating the gain variations resulting from temperature changes. The fabricated 10-stage limiting amplifier module provides 20 +/- 1.2 dBm output power level and excellent small signal gain flatness, +/- 2.2 dB, over 2-18 GHz frequency range.

No description available.

<p>Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. Both designs have a non-selectivelydeposited SiGeC base doped with boron and a poly-crystallineemitter doped with phosphorous.</p><p>Selective epitaxial growth of the collector layer has beendeveloped by using a reduced pressure chemical vapor deposition(RPCVD) technique. The incorporation of phosphorous and defectformation during selective deposition of these layers has beenstudied. A major problem of phosphorous-doping during selectiveepitaxy is segregation. Different methods, e.g. chemical orthermal oxidation, are shown to efficiently remove thesegregated dopants. Chemical-mechanical polishing (CMP) hasalso been used as an alternative to solve this problem. The CMPstep was successfully integrated in the HBT process flow.</p><p>Epitaxial growth of Si1-x-yGexCy layers for base layerapplications in bipolar transistors has been investigated indetail. The optimization of the growth parameters has beenperformed in order to incorporate carbon substitutionally inthe SiGe matrix without increasing the defect density in theepitaxial layers.</p><p>The thermal stability of npn SiGe-based heterojunctionstructures has been investigated. The influence of thediffusion of dopants in SiGe or in adjacent layers on thethermal stability of the structure has also been discussed.</p><p>SiGeC-based transistors with both non-selectively depositedcollector and selectively grown collector have been fabricatedand electrically characterized. The fabricated transistorsexhibit electrostatic current gain values in the range of 1000-2000. The cut-off frequency and maximum oscillation frequencyvary from 40-80 GHz and 15-30 GHz, respectively, depending onthe lateral design. The leakage current was investigated usinga selectively deposited collector design and possible causesfor leakage has been discussed. Solutions for decreasing thejunction leakage are proposed.</p><p><b>Key words:</b>Silicon-Germanium-Carbon (SiGeC),Heterojunction bipolar transistor (HBT), chemical vapordeposition (CVD), selective epitaxy, non-selective epitaxy,collector design, high-frequency measurement, dopantsegregation, thermal stability.</p>

The main focus of this thesis is placed on high frequency PCB signal Integrity Is-sues and RF/Microwave filters using EBG structures. From the signal Integrity aspect, two topics were mainly discussed. On one hand, the effect of increasing frequency on classical design rules for crosstalk reduction in PCBs was investigated experimentally and by full-wave simulations. An emphasis was placed on the 3×W spacing rule and the use of guard traces. Single-ended and differential transmission lines were considered. S-parameter measurements and simu-lations were carried out at high-frequency (up to 20 GHz). The results emphasize the necessity to reevaluate traditional design rules for their suitability in high frequency applications. Also, the impacts of using guard traces for high frequency crosstalk re-duction were clearly pointed out. On the other hand, the effect of high loss PCB ma-terials on the signal transmission characteristics of microstrip lines at high frequency (up to 20 GHz) was treated. Comparative studies were carried out on different micro-strip configurations using standard FR4 substrate and a high frequency dielectric ma-terial from Rogers, Corporation. The experimental results highlight the dramatic im-pact of high dielectric loss materials (FR4 and solder mask) and magnetic plating metal (nickel) on the high frequency signal attenuation and loss of microstrip trans-mission lines. Besides, the epoxy-based SU8 photoresist was characterized at high frequency (up to 50 GHz) using on-wafer conductor-backed coplanar waveguide transmission lines. A relative dielectric constant of 3.2 was obtained at 30 GHz. Some issues related to the processing of this material, such as cracks, hard-skin, etc, were also discussed. Regarding RF/Microwave filters, the concept of Electromagnetic Band Gap (EBG) was used to design and fabricate novel microstrip bandstop filters using periodically modified substrate. The proposed EBG structures, which don’t suffer conductor backing issues, exhibit interesting frequency response characteristics. The limitations of modeling and simulation tools in terms of speed and accuracy are also examined in this thesis. Experiments and simulations were carried out show-ing the inadequacies of the Spice diode model for the simulations in power electronics. Also, an Artificial Neural Network (ANN) model was proposed as an alternative and a complement to full-wave solvers, for a quick and sufficiently accurate simulation of interconnects. A software implementation of this model using Matlab’s ANN toolbox was shown to considerably reduce (by over 800 times) the simulation time of microstrip lines using full-wave solvers such as Ansoft’s HFSS and CST’s MWS. Finally, a novel cooling structure using a double heatsink for high performance electronics was presented. Methods for optimizing this structure were also discussed. / QC 20100809

[EN] Microwave photonics (MWP) is a well-established research field that investigates the use of photonic technologies to generate, distribute, process and analyze RF waveforms in the optical domain. Despite its great potential to solve long-standing problems faced by both the microwave and electronics industries, MWP systems are bulky, expensive and consume a lot of power. Integrated microwave photonics (IMWP) is an emerging area of research that promises to alleviate most of these drawbacks through the use of photonic integrated circuits (PIC). In this work, we have aimed at further closing the gap between the worlds of MWP and integrated optics. In particular, we have focused on the design and experimental characterization of PICs with reconfigurable, ring-assisted Mach-Zehnder interferometer filters (RAMZI), and demonstrated its potential use in different IMWP applications. These filters consist of a symmetric MZI loaded with ring resonators, which are coupled to the MZI branches by different optical couplers. The contributions of this thesis can be split into two sections. In the first one, we demonstrate integrated optical couplers and reflectors with variable power splitting and reflections ratios. These exploit the well-known properties of tapered multimode interference couplers (MMI), and their inherent robustness makes them highly suitable for the implementation of both RAMZI and reflective filters. Besides, we study in detail the impact of manufacturing deviations in the performance of a 4x4 MMI-based 90º hybrid, which is a fundamental building block in coherent optical communication systems. In the second section, we demonstrate the use of integrated RAMZI filters for three different IMWP applications, including instantaneous frequency measurement (IFM), direct detection of frequency-modulated signals in a MWP link, as well as in tunable, coherent MWP filters. A theoretical analysis of the limits and trade-offs that exist in photonics-based IFM systems is also provided. Even though these are early proof-of-concept experiments, we hope that further technological developments in the field will finally turn MWP into a commercial reality. / [ES] La fotónica de microondas (MWP) es un campo de investigación que estudia el uso de tecnologías ópticas para generar, distribuir, procesar y analizar señales de RF. A pesar de su gran potencial para resolver algunos de los problemas a los que se enfrentan las industrias electrónica y de microondas, estos sistemas son voluminosos, caros y consumen mucha potencia. La fotónica de microondas integrada (IMWP) es un área emergente que promete solucionar todos estos inconvenientes a través de la utilización de circuitos ópticos integrados (PIC). En esta tesis, hemos pretendido avanzar un poco más en el acercamiento entre estas dos disciplinas. En concreto, nos hemos centrado en el diseño y caracterización experimental de PICs con filtros reconfigurables basados en interferómetros Mach-Zehnder cargados con anillos (RAMZI), y demostrado su potencial uso en diferentes aplicaciones de IMWP. Los filtros RAMZI están hecho básicamente de un MZI simétrico cargado con anillos, los cuales a su vez se acoplan a las ramas del interferómetro a través de distintos acopladores ópticos. Las contribuciones de este trabajo se pueden dividir en dos partes. En la primera, hemos demostrado acopladores y reflectores ópticos integrados con coeficientes de acoplo y reflexión variables. Éstos explotan las propiedades de los acopladores por interferencia multimodal (MMI), y su robustez les hace muy atractivos para la implementación de filtros RAMZI y de tipo reflectivo. Además, hemos analizado el impacto que las tolerancias de fabricación tienen en el rendimiento de un híbrido óptico de 90º basado en un MMI 4x4, el cual es un elemento fundamental en los sistemas de comunicaciones ópticas coherentes. En la segunda parte, hemos demostrado el uso de filtros RAMZI en tres aplicaciones distintas de IMWP. En concreto, hemos utilizado dichos filtros para implementar sistemas de medida de frecuencia instantánea (IFM), detección directa de señales moduladas en frecuencia para enlaces fotónicos, así como en filtros coherentes y sintonizables de MWP. También hemos desarrollado un análisis teórico de las limitaciones y problemas que existen en los sistemas IFM. A pesar de que todos los experimentos realizados han consistido en prototipos para una prueba de concepto, esperamos que futuros avances tecnológicos permitan que la fotónica de microondas se convierta algún día en una realidad comercial. / [CAT] La fotònica de microones (MWP) és un camp d'investigació que estudia l'ús de tecnologies òptiques per a generar, distribuir, processar y analitzar senyals de radiofreqüència. A pesar del seu gran potencial per a resoldre alguns dels problemes als que s'enfronten les indústries electrònica i de microones, estos sistemes son voluminosos, cars i consumixen molta potència. La fotònica de microones integrada (IMWP) és un àrea emergent que promet solucionar tots estos inconvenients a través de la utilització de circuits òptics integrats (PIC). En esta tesi, hem pretés avançar un poc més en l'acostament entre estes dos disciplines. En concret, ens hem centrat en el disseny i caracterització experimental de PICs amb filtres reconfigurables basats en interferòmetres Mach-Zehnder carregats amb anells (RAMZI), i demostrat el seu potencial en diferents aplicacions d' IMWP. Els filtres RAMZI estan fets bàsicament d'un MZI simètric carregat amb anells, els quals, al seu torn, s'acoblen a les branques del interferòmetre a través de distints acobladors òptics. Les contribucions d'este treball es poden dividir en dos parts. En la primera, hem demostrat acobladors i reflectors òptics integrats amb coeficients de transmissió i reflexió variables. Estos exploten les propietats dels acobladors per interferència multimodal (MMI), i la seua robustesa els fa molt atractius per a la implementació de filtres RAMZI i de tipo reflectiu. A més a més, hem analitzat l'impacte que les toleràncies de fabricació tenen en el rendiment d'un híbrid òptic de 90 graus basat en un MMI 4x4, el qual és un element fonamental en els sistemes de comunicacions òptiques coherents. En la segona part, hem demostrat l'ús de filtres RAMZI en tres aplicacions diferents de IMWP. En concret, hem utilitzat estos filtres per a implementar sistemes de mesura de freqüència instantània (IFM), detecció directa de senyals modulades en freqüència per a enllaços fotònics, així com en filtres coherents i sintonitzables de MWP. També hem desenvolupat una anàlisi teòrica de les limitacions i problemes que existixen en els sistemes IFM. A pesar de que tots els experiments realitzats han consistit en prototips per a una prova de concepte, esperem que futurs avanços tecnològics permeten que la fotònica de microones es convertisca algun dia en una realitat comercial. / Sánchez Fandiño, JA. (2016). Integrated Optical Filters for Microwave Photonic Applications [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/67690 / TESIS

Thesis describing design and measurement of the vector reflectometer system based on six port principle. The expectations for precision measurement in wide bandwidth system are explained. Diode linearization problem is described and the calibration method especially designed for the wide band systems is explained. And finally several data processing methods for the final result decision are compared.

<p dir="ltr">In this thesis, an experimental procedure for assessing unsteady fluctuations in flow velocity inside an annular low pressure turbine test facility using constant temperature anemometry is established. This procedure is then applied to two test cases in order to validate the methodology and build expertise with the measurement techniques involved. The results of these experiments appear to be reasonable and in good agreement with the body of literature documenting such cases. After the procedure is validated, the experiments in the annular test section are conducted and the results are processed according to the same methodology as previous. The results provide spatial and temporal understanding of the flow at a plane downstream of the blade row. The uncertainties of measured quantities are computed and the experimental results are contextualized with a comparison to a numerical study. The body of work is assessed to determine whether the research objective has been met and recommendations for future studies are given.</p>

Submitted by Marco Antonio Oliveira da Silva (maosilva@ipen.br) on 2016-08-26T12:45:07Z No. of bitstreams: 0 / Made available in DSpace on 2016-08-26T12:45:07Z (GMT). No. of bitstreams: 0 / Medidas de espectroscopia gama de alta resolução têm diversas aplicações. Aplicações envolvendo medidas de radioisótopos de meia-vida curta podem apresentar problemas de baixa precisão nas contagens quando a fonte radioativa está distante do detector e de perda de acurácia por efeitos de tempo morto e empilhamento de pulsos em situação de altas taxas de contagens. Um modo de minimizar esses problemas é alterando a posição da fonte radioativa durante o processo de medição, aproximando-a do detector conforme sua atividade diminui e assim maximizando o número de contagens medidas. Neste trabalho, foi desenvolvido o Movimentador de Amostras Radioativas Automatizado (MARA), um aparato de baixo custo, feito com materiais de baixo número atômico e leve, projetado e construído para auxiliar nas medidas de espectroscopia gama, capaz de controlar a distância entre a fonte e o detector, permitindo inclusive que ocorra alteração dessa distância durante o processo de medição. Por ser automatizado ele otimiza o tempo do operador, que tem total liberdade para criar suas rotinas de medidas no dispositivo, além de evitar que o mesmo tome uma parcela da dose radioativa. Foi também feita uma interface que permite controle do MARA e a programação do sistema de aquisição de dados. Foram realizados testes para otimização da operação do sistema MARA e foi verificada a segurança de operação do MARA, não apresentando nenhuma falha durante seus testes. Foi aplicado o teste de repetitividade, por meio de medições com uma fonte calibrada de 60Co, e verificou-se que o sistema de movimentação de prateleiras automatizado reproduziu os resultados do sistema estático com confiabilidade de 95%. / Dissertação (Mestrado em Tecnologia Nuclear) / IPEN/D / Instituto de Pesquisas Energéticas e Nucleares - IPEN-CNEN/SP