Two dimensional (2D) materials with interesting fundamental physics and potential applications attract tremendous efforts to study. The versatile properties of 2D materials can be further tailored by tuning the electronic structure with the layer-stacking arrangement, of which the main adjustable parameters include the thickness and the in-plane twist angle between layers. The Angle-Resolved Photoemission Spectroscopy (ARPES) has become a canonical tool to study the electronic structure of crystalline materials. The recent development of ARPES with sub-micrometre spatial resolution (micro-ARPES) has made it possible to study the electronic structure of materials with mesoscopic domains. In this thesis, we use micro-ARPES to investigate the spatially-resolved electronic structure of a series of few-layer materials: 1. We explore the electronic structure of the domains with different number of layers in few-layer graphene on copper substrate. We observe a layer- dependent substrate doping effect in which the Fermi surface of graphene shifts with the increase of number of layers, which is then explained by a multilayer effective capacitor model. 2. We systematically study the twist angle evolution of the energy band of twisted few-layer graphene over a wide range of twist angles (from 5° to 31°). We directly observe van Hove Singularities (vHSs) in twisted bilayer graphene with wide tunable energy range over 2 eV. In addition, the formation of multiple vHSs (at different binding energies) is observed in trilayer graphene. The large tuning range of vHS binding energy in twisted few-layer graphene provides a promising material base for optoelectrical applications with broad-band wavelength selectivity. 3. To better extract the energy band features from ARPES data, we propose a new method with a convolutional neural network (CNN) that achieves comparable or better results than traditional derivative based methods. Besides ARPES study, this thesis also includes the study of surface reconstruction for the layered material Bi2O2Se with the analysis of Scanning Tunnelling Microscopy (STM) images. To explain the origin of the pattern, we propose a tile model that produces the identical statistics with the experiment.

This thesis reports the discovery of a wide negative di↵erential resistance (NDR) region in a graphite-silicone composite that was utilized to create a strain-tuned flexible oscillator. Encoding the strain into frequency mimics the behavior of mechanoreceptor neurons in the skin and demonstrates a flexible and electronically active material suitable for state of the art bio-electronic applications. The NDR was investigated over a range of composite filling fractions and temperatures; alongside theoretical modelling to calculate the tunneling current through a graphite-silicone barrier. This led to the understanding that the NDR is the result of a semi-metal to insulator transition of embedded graphene bilayers within the graphite nanoparticles. The transition, brought about by a transverse bias across specifically orientated particles, opens a partial band-gap at the Fermi level of the bilayer. NDR in a flexible material has not been observed before and has potential for creating a flexible active device. The electromechanical properties of the composite were considered through a bend induced bilayer strain. The piezoresistance was found to be dominated by transient resistance spiking from the breaking of conduction lines, which then reform according to the viscoelasticity of the polymer matrix. The resistance spiking was embraced as a novel method for sensitive di↵erential pressure detection, used in the development of two applications. Firstly, it was employed for the detection of ultrasound waves and found to have an acoustic pressure detection threshold as low as 48 Pa. A commensurability was observed between the composite width and ultrasound wavelength which was shown to be consistent with the formation of standing waves, described by Bragg’s law. Secondly, a differential pressure array of 64 composite pixels was fabricated and demonstrated to image pressures under 3.8 kPa at a resolution of 10 dpi. The NDR active region was incorporated into an LC circuit where it was demonstrated to sustain oscillations of up to 12.5 kHz. The composite was then strained and an intrinsic frequency was observed which had a linear dependence on the strain with a frequency shift of 84 Hz / % strain. Lastly the composite was used in a strain-tuned amplifier circuit and shown to provide a gain of up to 4.5. This thesis provided the groundwork for a completely flexible electronically active device for futuristic bio-electronic skins with resolutions and sensitivities rivalling those of human tactile sensing.

Orientador: Antonio Riul Júnior / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin / Made available in DSpace on 2018-09-02T19:37:47Z (GMT). No. of bitstreams: 1 Jimenez_MawinJavierMartinez_D.pdf: 7578838 bytes, checksum: def5bc65d8270856f55d63211e1e0f09 (MD5) Previous issue date: 2017 / Resumo: Para alcançar alto desempenho em dispositivos e aplicações faz-se necessário uma melhor compreensão do comportamento de materiais a base de grafeno em nanoescala para otimização de design e fabricação. A síntese química é uma excelente rota alternativa para produzir compósitos em nanoestruturas bem definidas de tamanhos semelhantes, garantindo propriedades elétricas reprodutíveis para aplicações confiáveis. O grafeno, na forma de pontos quânticos (QDs, do inglês quantum dots) em dimensão zero e nanofolhas (NPLs, do inglês graphene nanoplateletes) bidimensionais (2D), são materiais emergentes com funcionalidades únicas promissoras para novas aplicações. Neste trabalho apresentamos um estudo detalhado dos mecanismos de transporte em nanoestruturas formadas pela técnica de automontagem por adsorção física (LbL, do inglês Layer-by-Layer) na forma de multicamadas, com controle de espessura em nível molecular. Os filmes LbL foram formados por óxido de grafeno reduzido (rGO) funcionalizado com diferentes polieletrólitos tanto na forma de QDs quanto nanofolhas. As caracterizações elétricas indicaram corrente limitada pela carga espacial em algumas amostras, e em outras arquiteturas moleculares, mecanismo de condução via Poole-Frenkel seguindo a lei de Mott dominada por saltos variáveis. A flexibilidade da técnica LbL aliada à dimensão dos materiais utilizados foram favoravelmente exploradas como um ajuste fino para controle da mobilidade de portadores dentro das nanoestruturas formadas. Foi observado em alguns casos uma condução planar no interior da camada contendo rGOs na estrutura LbL com mobilidade eletrônica efetiva de ~ 35 cm² V^-1 s^-1. Em outros casos um mecanismo de condução 3D (interplanar ao longo de toda nanoestrutura LbL) com mobilidade eletrônica de ~ 151 cm² V^-1 s^-1. Medidas em função da temperatura indicaram alta probabilidade de saltos randômicos entre ilhas condutoras de rGO distribuídas ao longo da camada contendo os pontos quânticos, que contribui para um maior tempo de trânsito dos portadores e, consequentemente, mobilidades menores. O oposto ocorre para as nanofolhas de rGO, que requerem maiores energias de ativação devido ao tamanho e presença de defeitos, resultando em caminhos condutores maiores e com maiores mobilidades / Abstract: To achieve high-performance in devices and applications it is important a better comprehension of the behavior at nanoscale of graphene-based materials to promote a rational design and fabrication. The chemical synthesis is an excellent alternative route to optimize graphene-based composites in well-defined nanostructures of similar sizes, ensuring reproducible electrical properties for reliable applications. Graphene as quantum dots (QDs) and nanoplatelets (NPLs) presents emerging zero- and two-dimensional (2D) materials with promising unique functionalities to novel applications. We present here a detailed study of the charge transport mechanisms in multilayered nanostructures formed by physical adsorption through the layer-by-layer (LbL) technique, with molecular level thickness control. The LbL films were formed by reduced graphene oxides (rGO) functionalized with different polyelectrolytes and processed either as QDs or nanoplatelets. The electrical characterizations indicated a space-charge-limited current (SCLC) in some samples, while in other molecular architectures it was found a Poole-Frenkel conduction mechanism dominated by a Mott-variable range hoping model. The LbL assembly together with the dimensionalty of the materials could be favorably used as a fine tuning to control the charge carrier mobility inside the formed nanostructures. The flexibility of the LbL technique together with the dimensionality of the materials were favorably explored as a fine tuning of the charge carrier mobility inside the nanostructures. It was observed in some cases a 2D intra-planar conduction within the rGO layer in the LbL films, with an effective charge carrier mobility of ~ 35 cm² V-1 s-1, and in other cases a 3D conduction mechanism (interplanar along with the LbL nanostructure) with electronic mobility of ~ 151 cm² V-1 s-1. Temperature measurements indicated a higher probability of random jumps between rGO conducting "islands" distributed along with the plane layer having quantum dots, which contributes for a longer transit time of the carriers and, consequently, lower mobility values. The opposite occurred for the rGO nanoplatelets that required higher activation energy due to size and presence of defects, resulting in larger conductive pathways and higher mobilities / Doutorado / Física / Doutor em Ciências / 1247719 / CAPES / FAPESP

L’exfoliation en phase liquide du graphite est un procédé simple susceptible de produire du graphène à faible coût. Ces dernières années, de nombreuses équipes ont exploité la cavitation acoustique et la cavitation hydrodynamique comme moyen d’exfoliation. La cavitation acoustique ne peut traiter qu’une quantité limitée de fluide et génère des défauts sur la structure du graphène,tandis que la cavitation hydrodynamique dans une solution en écoulement n’agit que localement pendant une durée très brève. Les équipes de recherche utilisant ce dernier procédé compensent cette brièveté en imposant à la solution chargée en graphite des différences de pression très fortes, et utilisent alors des infrastructures macroscopiques lourdes pour lesquelles il est difficile de distinguer le rôle du cisaillement de celui de la cavitation. Nous avons cherché à développer un nouveau procédé d’exfoliation basé sur l’utilisation de microsystèmes fluidiques capables de générer un écoulementcavitant avec un débit supérieur à 10 L/h pour une différence de pression modérée n’excédant pas 10 bar. Une nouvelle génération de laboratoires ‘sur puce’ a ainsi été imaginée et réalisée, permettant de traiter des solutions surfactées chargées en microparticules de graphite. Il est apparu que laconcentration solide et la durée de traitement sont des paramètres cruciaux pour l’efficacité du procédé. Par rapport à un écoulement monophasique laminaire microfluidique, l’écoulement cavitant produit plus de produits exfoliés et de graphène, avec un rendement de l’ordre de 6%. Ceci indique que l’implosion des bulles et la turbulence favorisent également les interactions entre particules. Ce procédé d’exfoliation microfluidique, qui ne nécessite une puissance que de quelques Watts, permet d’envisager à terme une production économe et écologique de graphène en suspension. / Liquid phase exfoliation of graphite is a simple and low-cost process, that is likely to produce graphene. The last few years, many researchers have used acoustic or hydrodynamic cavitation as an exfoliating tool. Acoustic cavitation is limited to low volumes and defects are present on the graphenesheets ; hydrodynamic cavitation inside a flowing solution acts briefly. So, people are using big reactors running with high pressure drops, and it is difficult from a fundamental point of view to know the physical role of shear rate versus cavitation, in the exfoliation process. We have tried to develop a new process funded on hydrodynamic cavitation ’on a chip’, with flow rates above 10 L/h and pressure drop below 10 bar. A new generation of ’labs on a chip’ has been designed and performed, processing with aqueous surfactant graphite solutions. The solid concentration and the duration of the process have proved to be key parameters. Cavitating microflows have exhibited a better efficiency (up to ~6%) than laminar liquid microflows, for the production of graphene flakes. Collapsing bubbles and turbulence are also likely to enhance particles interactions. Such a microfluidic process, which requires an hydraulic power of a few Watt, makes possible a further low-cost and green production of graphene sheets.

O presente trabalho estuda a produção e modificações físico-químicas do grafeno frente a tratamentos térmicos. Em uma primeira etapa, foi investigada a síntese de grafeno pela técnica de Deposição Química a partir da fase Vapor (CVD) sobre fitas de cobre. Nós variamos quatro parâmetros que influenciam no crescimento de grafeno: fluxo de metano (CH4), fluxo de hidrogênio (H2), tempo de crescimento e grau de pureza do cobre. Usando as técnicas de caracterização de espectroscopia Raman e microscopia óptica, observamos que fluxo menor de H2 e fluxo intermediários de CH4 favorecem o crescimento de grafeno de alta qualidade. Além disso, vimos que 15 minutos de crescimento de grafeno é suficiente para cobertura do substrato de cobre com grafeno. Por fim, foi visto que o maior grau de pureza do cobre permite a produção de monocamadas de grafeno mais homogêneas. Numa segunda etapa, foi realizado um estudo com objetivo de entender a interação de hidrogênio com monocamadas de grafeno. Nós usamos amostras de grafeno depositadas em filmes de SiO2 (285 nm)/Si e tratadas termicamente em atmosfera controlada de deutério (99,8%) em temperaturas entre 200 e 800 °C. Nós também investigamos a dessorção de hidrogênio do grafeno usando amostras previamente tratadas em deutério a 600 °C e depois tratadas em atmosfera controlada de nitrogênio em temperaturas entre 200 e 800 °C. Após os tratamentos, análise por reação nuclear (NRA) foi realizada para quantificar o deutério, onde nós observamos uma grande incorporação de deutério no grafeno acima de 400 °C, tendo um aumento moderado até 800 °C. Nós também observamos que a dessorção do deutério do grafeno ocorre apenas em 800 °C, embora a dessorção de deutério do óxido de silício ocorra a partir de 600°C. Espectroscopia Raman também foi realizada após cada tratamento térmico. Os resultados mostram que os defeitos na estrutura do grafeno têm um grande aumento para as etapas de maior temperatura na incorporação de deutério. Análises realizadas com Espectroscopia de Fotoelétrons Induzidos por Raios X (XPS) mostraram que a incorporação de deutério para maiores temperaturas causa o "etching" do grafeno. Por fim, caracterizações usando Espectroscopia de Absorção de Raios X (NEXAFS) mostraram que o deutério liga-se ao grafeno sem orientação preferencial. / The present work studies the production and physical-chemical modifications of the graphene under thermal annealings. In a first study, the graphene synthesis by Chemical Vapor Deposition (CVD) on copper foils was investigated. We varied four parameters that influence the growth of graphene: methane flow (CH4), hydrogen flow (H2), growth time and copper purity. Using Raman spectroscopy and optical microscopy, we observed that lower flux of H2 and intermediate flux of CH4 leads to the growth of high quality graphene. In addition, we observed that 15 minutes growth of graphene is sufficient to cover the copper substrate. A higher copper purity allows the production of homogeneous graphene monolayers. In a second step, a study was carried out to understand the interaction of hydrogen with graphene monolayers. We used graphene samples deposited on SiO2 (285 nm)/Si films and annealed in a controlled atmosphere of deuterium (99.8%) at temperatures between 200 and 800 °C. We also investigated the hydrogen desorption of graphene using samples previously treated in deuterium at 600 °C and then annealed in a controlled atmosphere of nitrogen at temperatures between 200 and 800 °C. After the annealings, nuclear reaction analysis (NRA) was performed to quantify the deuterium, where we observed a large incorporation of deuterium in graphene above 400 °C, with a moderate increase up to 800 °C. We also observed that desorption of deuterium occurs only at 800 °C, although deuterium desorption from silicon oxide occurs at 600 °C. Raman spectroscopy was also performed after each annealing. The results show that defects in the structure of graphene have a large increase for deuterium incorporation. Analyzes carried out with X-ray Photoelectron Spectroscopy (XPS) showed that the deuterium incorporation at higher temperatures leads to graphene etching. Finally, characterizations using X-ray Absorption Spectroscopy (NEXAFS) showed that deuterium binds to graphene without preferential orientation.

Cette étude porte sur la production et à la caractérisation de matériaux composites à base de matrices d’époxy modifiées par incorporation de particules de caoutchouc recyclées et dévulcanisées. Ces matrices sont renforcées par des fibres d'alumine (Al2O3- FA) et/ou par des nanoplaquettes de graphène (GnPs). Principalement, la fabrication, la caractérisation générale des composites ainsi que l’identification des mécanismes de renforcement à l’échelle micro et nano ont été réalisées. En outre, la fabrication de composites multifonctionnels à base de caoutchouc dévulcanisé et d'époxy a été réalisée pour des applications diverses potentielles dans les industries aéronautique et automobile. Dans un premier temps, les propriétés mécaniques et thermomécaniques des composites ont été étudiées de manière approfondie. L’étude mécanique a consisté à mesurer le module d’élasticité, la ténacité et la température de transition vitreuse. / Recycling of rubber is gaining importance across the world in many industries due to shrinking resources, increasing cost of raw materials, growing conscious about sustainable development as well as environmental issues. In the frame of the common research program between Michigan Tech University/USA and Supmeca/Paris-FRANCE, this PhD work is devoted to the design, development and characterization of recycled rubber modified epoxy-based composites . Additionally, alumina (Al2O3) fibers (AFs) and/or graphene nano platelets (GnPs) have been used as the basic reinforcements. A detailed experimental approach was adapted to these multifunctional composites for explaining of toughening mechanisms by means of fracture toughness test methods and scanning electron microscopy (SEM) on the fracture surfaces. Also, different case studies were included at the end of this work for various potential applications in aeronautic and automotive industries.

Graphene has emerged as an appealing material for a variety of optoelectronic applications due to its unique electrical and optical characteristics. In this thesis, I will present recent advances in integrating graphene and graphene-boron nitride (BN) heterostructures with confined optical architectures, e.g. planar photonic crystal (PPC) nanocavities and silicon channel waveguides, to make this otherwise weakly absorbing material optically opaque. Based on these integrations, I will further demonstrate the resulting chip-integrated optoelectronic devices for optical interconnects. After transferring a layer of graphene onto PPC nanocavities, spectral selectivity at the resonance frequency and orders-of-magnitude enhancement of optical coupling with graphene have been observed in infrared spectrum. By applying electrostatic potential to graphene, electro-optic modulation of the cavity reflection is possible with contrast in excess of 10 dB. And furthermore, a novel and complex modulator device structure based on the cavity-coupled and BN-encapsulated dual-layer graphene capacitor is demonstrated to operate at a speed of 1.2 GHz. On the other hand, an enhanced broad-spectrum light-graphene interaction coupled with silicon channel waveguides is also demonstrated with ∼0.1 dB/μm transmission attenuation due to graphene absorption. A waveguide-integrated graphene photodetector is fabricated and shown 0.1 A/W photoresponsivity and 20 GHz operation speed. An improved version of a similar photodetector using graphene-BN heterostructure exhibits 0.36 A/W photoresponsivity and 42 GHz response speed. The integration of graphene and graphene-BN heterostructures with nanophotonic architectures promises a new generation of compact, energy-efficient, high-speed optoelectronic device concepts for on-chip optical communications that are not yet feasible or very difficult to realize using traditional bulk semiconductors.

Atomically thin quasi-two-dimensional materials like graphene and transition metal dichalcogenide (TMDC) layers exhibit extraordinary optical and electrical properties. They have not only been used as testing grounds for fundamental research but also show promise for their viability in optoelectronics, photovoltaics and photocatalysis, to name a few technological applications. In practice, seldom are these materials used in isolation. One often finds them as part of a multicomponent structure, or heterostructure. In a similar spirit as the influence of solvents on the properties of molecular complexes, nanomaterials are also affected by their dielectric environment. Engineering the effect of the surroundings on the excitations in these materials is both a challenge and an opportunity. Moreover, understanding the transport of energy and charge through these heterostructures is crucial for device design. In this dissertation I will explore the properties of excitations in zero-dimensional and two-dimensional nanostructures and their dependence on the details of the environment using optical spectroscopy. Here, I discuss three of the projects that I undertook during my graduate studies. The first project concerns the efficient near-field, non-radiative energy transfer (NRET) of photo-excited carriers from semiconductor nanocrystals to graphene and a TMDC, molybdenum disulfide. Photoluminescence quenching of single quantum dots and time-resolved photoluminescence were used to quantify the rate of energy transfer. The NRET rate exhibited surprisingly opposite trends with increasing number of layers of the acceptor 2D sheet. The rate increased with increasing thickness of adjacent graphene layers but decreased with increasing thickness of MoS₂. A model based on classical electromagnetism could successfully explain the countervailing trends in terms of the competition between the dissipative channels and reduction of the electric field within the 2D material. In the next project, the exciton binding energy and band gap in another TMDC, monolayer WS₂, were tuned via dielectric screening from the environment. Monolayers of WS₂ were capped with graphene layers of varying thickness (1 – 4 layers). The excitonic states of WS₂ in the resulting heterostructures were detected using reflectance contrast spectroscopy and theoretically studied by a semi-classical model. The binding energy of the exciton was halved to 150 meV by placement of a single layer of graphene adjacent to the WS₂. Furthermore, this dramatic decrease in the binding energy is accompanied by a reduction of the band gap by the same amount. Additionally, the average spacing between the graphene and WS₂ was also identified to be a critical parameter with respect to dielectric screening of the electron - hole interaction. This offers a flexible alternative for the external manipulation of the Coulomb interaction. In the final part, I study how excitons in WS₂ couple and scatter with the excitations of the lattice or phonons. The importance of this study stems from the contribution of the scattering rates to the spectral width of the excitonic feature, the dephasing dynamics and thermal transport. The transition from direct to indirect band gap semiconductor from mono- to bilayer is expected to add an additional scattering channel via phonon emission. Through temperature dependent reflectance contrast and photoluminescence spectroscopy, the scattering rate for the phonon emission and absorption processes have been quantified. Comparing the results to data reported in the literature, it is understood that the striking change for the scattering rates is expected only at the mono- to bilayer transition for WS₂. The results suggest material thickness as a handle for engineering exciton - phonon interactions at the nanoscale.

The ever-growing demand for higher bandwidth broadband communication has driven transistor operation to higher and higher frequencies. However, achieving cut-o frequencies in the terahertz regime have been unsuccessful with the current state-of-the-art transistors exhibiting no better than 800 GHz. While the high-frequency transistor eld is dominated by III-V semiconductors, it has been proposed that graphene may be a competitive material. Graphene exhibits electron and hole mobilities orders of magnitude larger than conventional semiconductors and has an atomically thin form factor. Despite these benets, high-frequency graphene transis tors have yet to realize high-frequency characteristics better than III-V's. This thesis expands on the current limitations of graphene transistors in terms of improved fabrication techniques (to achieve higher carrier mobilities and lower contact resistances) and fundamental, band structure limitations (like quantum capacitance and the zero energy band gap). First, graphene, fully encapsulated in hexagonal boron-nitride crystals, transistors are fabricated with self-aligned source and drain contacts with sub-100 nm gate lengths. The encapsulation technique shields the graphene from the external environment so that graphene retains its intrinsic high mobility characteristic. In this short-channel regime, transport is determined to be ballistic with an injection velocity close to the Fermi velocity of graphene. However, the transconductance and output conductance are only 0.6 mS/mm and 0.3 mS/mm, respectively. This lack-luster performance is due to a relatively thick (3.5 nm) eective oxide thickness but also due to the eects of quantum capacitance which diminishes the total gate capacitance by up to 60%. Furthermore, the output conductance is increased due to the onset of hole conduction which leads to a second linear regime in the I-V characteristic. This is a direct consequence of graphene's zero energy band gap electronic structure. Finally, the source and drain contact resistances are large, which leads to poorer output current, transconductance and output conductance. Second, improvement to the contact resistance is explored by means of using graphite as the contact metal to graphene. Since graphite is atomically smooth, a pristine graphite-graphene interface can be formed without grain asperities found in conventional metals. Graphite is also lattice matched to graphene and exhibits the same 60 symmetry. Consequently, it is discovered that the graphite-graphene contact resistance exhibits a 60 periodicity, with respect to crystal orientation. When the two lattices align, a contact resistivity under 10 Wmm² is observed. Furthermore, contact resistivity minima are observed at two of the commensurate angles of twisted bilayer graphene. Though graphene transistor performance is band structure limited, it may still be possible to achieve competitive high-frequency operation by use of h-BN encapsulation and graphite contacts.

This thesis describes studies of a two-dimensional (2D), hexagonal arrangement of carbon atoms, graphene. Because of graphene’s reduced dimensionality, the 2D material possesses many desirable mechanical and electrical properties compared to its three-dimensional (3D) counterpart, graphite. In fact, its mechanical strength and electrical mobility are one of the strongest and fastest in the world, prompting much excitements from science and engineering communities alike ever since its first experimental demonstration in 2004. The first part of this thesis deals with graphene in material level. Chapter 1 provides an introduction to graphene. Chapter 2 describes chemical vapor deposition (CVD) synthesis of graphene and various transfer techniques. Chapter 3 describes characterization of graphene using optical inspection, oxidation test, Raman spectroscopy, and electrical transport. The second part of this thesis concerns graphene in device level, electro-mechanical implementation in particular. Chapter 4 gives an introduction to graphene nano-electro- mechanical systems (GNEMS), where the material’s mechanical and electrical prowess can best be combined, and describes fabrication process as well as transduction mechanism. Chapter 5 shows how GNEMS can be used to build a pressure sensor or an accelerometer. Chapter 6 is a study of the graphene resonators for signal processing such as in RF filters or oscillators. Chapter 7 describes the graphene - silicon nitride heterostructure resonators. The third part of this thesis considers the integration of GNEMS at a system level. Chapter 8 depicts integration of graphene resonators onto a taped-out CMOS die using post-processing. This work, in conjunction with numerous other work done by fellow researchers in the field, tries to provide an overview - from the material synthesis to device fabrication and characterization, and further to system level integration - in utilizing graphene, and graphene NEMS in particular, for sensing and signal processing applications.