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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Anticrossing-Spektroskopie schnell bewegter Heliumatome nach Elektroneneinfang in 10 bis 50 keV HE+-He-Stößen

Ludwig, Thorsten. Unknown Date (has links) (PDF)
Techn. Universiẗat, Diss., 2005--Berlin.
2

Study on dynamics in the mesosphere, thermosphere and ionosphere with optical observations from the International Space Station / 国際宇宙ステーションからの光学観測を用いた中間圏、熱圏、電離圏のダイナミクスの研究

Hozumi, Yuta 23 March 2017 (has links)
京都大学 / 0048 / 新制・課程博士 / 博士(理学) / 甲第20186号 / 理博第4271号 / 新制||理||1614(附属図書館) / 京都大学大学院理学研究科地球惑星科学専攻 / (主査)准教授 齊藤 昭則, 教授 田口 聡, 教授 塩谷 雅人 / 学位規則第4条第1項該当 / Doctor of Science / Kyoto University / DGAM
3

Variability of the helium ion concentration in the topside ionosphere over Arecibo

Ma, Qingjin 21 July 2017 (has links)
No description available.
4

Towards saturation of detection efficiency in superconducting single-photon detectors at 4.2 K using local helium ion irradiation

Martinez, Glenn 25 September 2021 (has links)
Superconducting single-photon detectors (SSPDs) are the leading detectors in terms of high-speed single-photon counting and high detection efficiency (DE). One factor that limits the DE is the critical current Ic, which is the maximum current before the superconductor switches to the normal state. Increasing device’s bias current towards the Ic can improve the DE. However, the device’s Ic is reduced due to constriction and current crowding at the edges of the wire. Typically, this is caused by fabrication defects. Locally suppressing superconductivity at these defects can potentially lessen the occurrence of current crowding. In this thesis, we used the beam from the helium ion microscope (HIM) and measured the Ic to observe the effects of locally irradiating specific areas on a SSPD wire. Due to the HIM’s small spot size and high collimation, we can control the superconducting gap precisely at the center and edges of the wire. Suppressing the edges can potentially reduce current crowding and increase the device’s critical current while suppressing the center can improve detection sensitivity for photons incident at that location. Our results showed that the irradiated devices had reduced Ic compared to unirradiated devices for both cases. We then extend this method of local suppression of superconductivity to explore an alternative method of fabricating SSPDs by directly writing the device on the superconducting thin film. This can enable the fabrication of devices without the use of lithography resist. In our experiment, we fabricated a 3 μm wire using optical lithography that was disconnected at the center and connected it by writing a single 1 μm wire with the He+ ion beam. We measured the Ic for samples with and without the 1 μm wire pattern and observed that the Ic decreased as we increased the ion dose. Overall, this work aims to contribute to the continuing investigation of the detection mechanism for SSPDs and the improvement of nanofabrication methods using the HIM.
5

Ionenstrahlanalytik im Helium-Ionen-Mikroskop

Klingner, Nico 16 March 2017 (has links) (PDF)
Die vorliegende Arbeit beschreibt die Implementierung ionenstrahlanalytischer Methoden zur Charakterisierung der Probenzusammensetzung in einem Helium-Ionen-Mikroskop mit einem auf unter einen Nanometer fokussierten Ionenstrahl. Zur Bildgebung wird dieser im Mikroskop über Probenoberflächen gerastert und die lokale Ausbeute an Sekundärelektronen gemessen. Obwohl sich damit ein hoher topografischer Kontrast erzeugen lässt, lassen sich weder aus der Ausbeute noch aus der Energieverteilung der Sekundärelektronen verlässliche Aussagen zur chemischen Zusammensetzung der Probe treffen. Daher wurden in dieser Arbeit verschiedene ionenstrahlinduzierte Sekundärteilchen hinsichtlich ihrer Eignung für die Elementanalytik im Helium-Ionen-Mikroskop verglichen. Zur Evaluation standen der Informationsgehalt der Teilchen, deren Analysierbarkeit sowie deren verwertbare Ausbeute. Die Spektrometrie rückgestreuter Teilchen sowie die Sekundärionen-Massenspektrometrie wurden dabei als die geeignetsten Methoden identifiziert und im Detail untersucht. Gegenstand der Untersuchung waren physikalische Limitierungen und Nachweisgrenzen der Methoden sowie deren Eignung zum Einbau in ein Helium-Ionen-Mikroskop. Dazu wurden verschiedene Konzepte von Spektrometern evaluiert, erprobt und hinsichtlich ihrer Effizienz, Energieauflösung und Umsetzbarkeit im Mikroskop bewertet. Die Flugzeitspektrometrie durch Pulsen des primären Ionenstrahls konnte als die geeignetste Technik identifiziert werden und wurde erfolgreich in einem Helium-Ionen-Mikroskop implementiert. Der Messaufbau, die Signal- und Datenverarbeitung sowie vergleichende Simulationen werden detailliert beschrieben. Das Spektrometer wurde weiterhin ausführlich hinsichtlich Zeit-, Energie- und Massenauflösung charakterisiert. Es werden ortsaufgelöste Rückstreuspektren vorgestellt und damit erstmalig die Möglichkeit zur Ionenstrahlanalytik im Helium-Ionen-Mikroskop auf einer Größenskala von ≤ 60 nm aufgezeigt. Das Pulsen des primären Ionenstrahls erlaubt es zudem, die Technik der Sekundärionen-Massenspektrometrie anzuwenden. Diese Methode bietet Informationen zur molekularen Probenzusammensetzung und erreicht für einige Elemente niedrigere Nachweisgrenzen als die Rückstreuspektrometrie. Damit konnten erstmalig im Helium-Ionen-Mikroskop gemessene Sekundärionen-Massenspektren sowie die ortsaufgelöste Elementanalyse durch spektrometrierte Sekundärionen demonstriert werden. Die Ergebnisse dieser Arbeit sind in der Fachzeitschrift Ultramicroscopy Band 162 (2016) S. 91–97 veröffentlicht. Ab Oktober 2016 werden diese auch in Form eines Buchkapitels in dem Buch „Helium Ion Microscopy“, Springer Verlag Heidelberg zur Verfügung stehen. / The present work describes the implementation of ion beam analysis methods in a helium-ion-microscope for the determination of sample compositions with a focused ion beam of < 1 nm size. Imaging in the microscope is realized by scanning the focused ion beam over the sample surface while measuring the local secondary electron yield. Although this procedure leads to a high topographical contrast, neither the yield nor the energy distribution of the secondary electrons deliver reliable information on the chemical composition of the sample. For this purpose, in this work different ion beam induced secondary particles were compared with respect to their suitability for the analysis of the chemical composition in the helium-ion-microscope. In particular the information content of the particles, their analysability and their yield were evaluated. As a result, the spectrometry of backscattered particles and the mass spectrometry of sputtered secondary ions were identified as the most promising methods and regarded in detail. The investigation focused on physical limitations and detection limits of the methods as well as their implementability into a helium-ion-microscope. Therefor various concepts of spectrometers were evaluated, tested and validated in terms of their efficiency, energy resolution and practicability in the microscope. Time-of-flight spectrometry by pulsing the primary ion beam could be identified as the most suitable technique and has been successfully implemented in a helium-ion-microscope. The measurement setup, signal processing and data handling as well as comparative simulations are described in detail. Further the spectrometer was characterized explicitly in terms of time, energy and mass resolution. Spatially resolved backscattering spectra will be shown demonstrating the feasibility of performing ion beam analysis in a helium-ion-microscope for the first time on a size scale of ≤ 60 nm. By pulsing the primary ion beam the technique of secondary ion mass spectrometry becomes automatically accessible. This method provides information on the molecular composition of samples and can reach higher detection limits than those from backscattering spectrometry. For the first time, in a helium-ion-microscope measured secondary ion mass spectra and spatially resolved elemental analysis by spectrometry of secondary ions, could be demonstrated. The results of this work are published 2016 in the scientific journal Ultramicroscopy, volume 162 on pages 91 to 971. In October 2016 there will be another publication as a book chapter in „Helium Ion Microscopy“ (publisher: Springer Verlag Heidelberg).
6

Ionenstrahlanalytik im Helium-Ionen-Mikroskop

Klingner, Nico 31 January 2017 (has links)
Die vorliegende Arbeit beschreibt die Implementierung ionenstrahlanalytischer Methoden zur Charakterisierung der Probenzusammensetzung in einem Helium-Ionen-Mikroskop mit einem auf unter einen Nanometer fokussierten Ionenstrahl. Zur Bildgebung wird dieser im Mikroskop über Probenoberflächen gerastert und die lokale Ausbeute an Sekundärelektronen gemessen. Obwohl sich damit ein hoher topografischer Kontrast erzeugen lässt, lassen sich weder aus der Ausbeute noch aus der Energieverteilung der Sekundärelektronen verlässliche Aussagen zur chemischen Zusammensetzung der Probe treffen. Daher wurden in dieser Arbeit verschiedene ionenstrahlinduzierte Sekundärteilchen hinsichtlich ihrer Eignung für die Elementanalytik im Helium-Ionen-Mikroskop verglichen. Zur Evaluation standen der Informationsgehalt der Teilchen, deren Analysierbarkeit sowie deren verwertbare Ausbeute. Die Spektrometrie rückgestreuter Teilchen sowie die Sekundärionen-Massenspektrometrie wurden dabei als die geeignetsten Methoden identifiziert und im Detail untersucht. Gegenstand der Untersuchung waren physikalische Limitierungen und Nachweisgrenzen der Methoden sowie deren Eignung zum Einbau in ein Helium-Ionen-Mikroskop. Dazu wurden verschiedene Konzepte von Spektrometern evaluiert, erprobt und hinsichtlich ihrer Effizienz, Energieauflösung und Umsetzbarkeit im Mikroskop bewertet. Die Flugzeitspektrometrie durch Pulsen des primären Ionenstrahls konnte als die geeignetste Technik identifiziert werden und wurde erfolgreich in einem Helium-Ionen-Mikroskop implementiert. Der Messaufbau, die Signal- und Datenverarbeitung sowie vergleichende Simulationen werden detailliert beschrieben. Das Spektrometer wurde weiterhin ausführlich hinsichtlich Zeit-, Energie- und Massenauflösung charakterisiert. Es werden ortsaufgelöste Rückstreuspektren vorgestellt und damit erstmalig die Möglichkeit zur Ionenstrahlanalytik im Helium-Ionen-Mikroskop auf einer Größenskala von ≤ 60 nm aufgezeigt. Das Pulsen des primären Ionenstrahls erlaubt es zudem, die Technik der Sekundärionen-Massenspektrometrie anzuwenden. Diese Methode bietet Informationen zur molekularen Probenzusammensetzung und erreicht für einige Elemente niedrigere Nachweisgrenzen als die Rückstreuspektrometrie. Damit konnten erstmalig im Helium-Ionen-Mikroskop gemessene Sekundärionen-Massenspektren sowie die ortsaufgelöste Elementanalyse durch spektrometrierte Sekundärionen demonstriert werden. Die Ergebnisse dieser Arbeit sind in der Fachzeitschrift Ultramicroscopy Band 162 (2016) S. 91–97 veröffentlicht. Ab Oktober 2016 werden diese auch in Form eines Buchkapitels in dem Buch „Helium Ion Microscopy“, Springer Verlag Heidelberg zur Verfügung stehen. / The present work describes the implementation of ion beam analysis methods in a helium-ion-microscope for the determination of sample compositions with a focused ion beam of < 1 nm size. Imaging in the microscope is realized by scanning the focused ion beam over the sample surface while measuring the local secondary electron yield. Although this procedure leads to a high topographical contrast, neither the yield nor the energy distribution of the secondary electrons deliver reliable information on the chemical composition of the sample. For this purpose, in this work different ion beam induced secondary particles were compared with respect to their suitability for the analysis of the chemical composition in the helium-ion-microscope. In particular the information content of the particles, their analysability and their yield were evaluated. As a result, the spectrometry of backscattered particles and the mass spectrometry of sputtered secondary ions were identified as the most promising methods and regarded in detail. The investigation focused on physical limitations and detection limits of the methods as well as their implementability into a helium-ion-microscope. Therefor various concepts of spectrometers were evaluated, tested and validated in terms of their efficiency, energy resolution and practicability in the microscope. Time-of-flight spectrometry by pulsing the primary ion beam could be identified as the most suitable technique and has been successfully implemented in a helium-ion-microscope. The measurement setup, signal processing and data handling as well as comparative simulations are described in detail. Further the spectrometer was characterized explicitly in terms of time, energy and mass resolution. Spatially resolved backscattering spectra will be shown demonstrating the feasibility of performing ion beam analysis in a helium-ion-microscope for the first time on a size scale of ≤ 60 nm. By pulsing the primary ion beam the technique of secondary ion mass spectrometry becomes automatically accessible. This method provides information on the molecular composition of samples and can reach higher detection limits than those from backscattering spectrometry. For the first time, in a helium-ion-microscope measured secondary ion mass spectra and spatially resolved elemental analysis by spectrometry of secondary ions, could be demonstrated. The results of this work are published 2016 in the scientific journal Ultramicroscopy, volume 162 on pages 91 to 971. In October 2016 there will be another publication as a book chapter in „Helium Ion Microscopy“ (publisher: Springer Verlag Heidelberg).
7

Modification of Iron pnictide and MgB2 thin films using focused He+ ion beam irradiation for superconducting devices

Kasaei, Leila January 2019 (has links)
Continued pursuit of better superconducting devices and an understanding of how the focused ion beam evolves in a complex material are the primary motivations behind this work. The materials of interest are MgB2 and Co-doped Ba122. Superconducting properties of MgB2 were discovered in 2001. It is the first superconductor recognized as a multigap superconductor. Owing to its high Tc of ~39K, electronic circuits based on this material are expected to operate at a much higher temperature (~25 K) than low-temperature superconductors, using compact cryocoolers. Co-doped Ba122 is also a multigap superconductor which belongs to Fe-based superconductor (FeSC) family. The undoped Ba122 compound is a metal exhibiting antiferromagnetism which coexists with superconducting phase up to a certain doping level. The optimally electron-doped BaFe2As2 exhibits the transition temperature Tc of ~21 K which corresponds to the top of the “dome” in the phase diagram. While the Fe-based SC may not signify a particular advance in terms of practical applications, many unique aspects make them worth studying. In particular, the superconducting gap symmetry and structures which appear to be quite different from family to family and not yet fully understood. We report on investigating the normal-state, and superconducting properties of Co-doped BaFe2As2 and MgB2 thin films irradiated at room temperature using a 30-keV focused He+ ion beam in helium ion microscope (HIM). R-T measurement was carried out to extract the dose dependence for Tc and resistivity p0 of the irradiated region. We observed an increase in p0 and a decrease in Tc down to complete suppression of superconductivity for both materials, although the trend of the changes was quite different. In addition, for Ba122, the data for ΔTc ⁄ Tc0 versus measured change in resistivity favors s± over s++ symmetry. Using TRIM software, the projected range and the damage density distribution of the He+ ions were tracked in the samples. Single track irradiation sites for MgB2 sample were characterized using FIB extraction/TEM. The TEM micrographs reveal the subsurface damage density contours that evolve with increasing dose. The Josephson effect is a unique phenomenon that gives direct access to the phase difference �� of the macroscopic wave functions that describe the superconducting state. Josephson junction is also appealing for engineering application in superconducting electronics. Having found the dose at which complete suppression of Tc occurs from the first part of the study, a fabrication process was developed to produce planar Josephson junctions from MgB2 and Co-doped Ba122. The Josephson coupling across the barrier for both materials was observed. MgB2 Josephson junctions showed resistivity shunted junction (RSJ) I-V curve with excellent uniformity and reproducibility. We have also demonstrated tens of planar MgB2 Josephson junctions operating coherently in series arrays. 60 Josephson junction series arrays successfully developed with less than 4% spread in critical current at 12 K. Under microwave radiation, flat giant Shapiro steps up to 150 μA width appear at voltages Vn=NnΦ0f, where N is the number of junction in the array, �� is an integer representing Shapiro step index, and f is the applied microwave frequency. The uniformity and close spacing of JJs in the arrays are significantly better than MgB2 multi-junction devices made by other techniques. It has been a huge success in showing the feasibility of this technology for pursuing superconducting digital electronics, Josephson voltage standards and arbitrary function generators in particular, in MgB2 with ≥ 20K operating temperature. / Physics
8

Investigation of oxide semiconductor based thin films : deposition, characterization, functionalization, and electronic applications

Rajachidambaram, Meena Suhanya 06 January 2013 (has links)
Nanostructured ZnO films were obtained via thermal oxidation of thin films formed with metallic Zn-nanoparticle dispersions. Commercial zinc nanoparticles used for this work were characterized by microscopic and thermal analysis methods to analyze the Zn-ZnO core shell structure, surface morphology and oxidation characteristics. These dispersions were spin-coated on SiO₂/Si substrates and then annealed in air between 100 and 600 °C. Significant nanostructural changes were observed for the resulting films, particularly those from larger Zn nanoparticles. These nanostructures, including nanoneedles and nanorods, were likely formed due to fracturing of ZnO outer shell due to differential thermal expansion between the Zn core and the ZnO shell. At temperatures above 227 °C, the metallic Zn has a high vapor pressure leading to high mass transport through these defects. Ultimately the Zn vapor rapidly oxidizes in air to form the ZnO nanostructures. We have found that the resulting films annealed above 400 °C had high electrical resistivity. The zinc nanoparticles were incorporated into zinc indium oxide solution and spin-coated to form thin film transistor (TFT) test structures to evaluate the potential of forming nanostructured field effect sensors using simple solution processing. The functionalization of zinc tin oxide (ZTO) films with self-assembled monolayers (SAMs) of n-hexylphosphonic acid (n-HPA) was investigated. The n-HPA modified ZTO surfaces were characterized using contact angle measurement, x-ray photoelectron spectroscopy (XPS) and electrical measurements. High contact angles were obtained suggesting high surface coverage of n-HPA on the ZTO films, which was also confirmed using XPS. The impact of n-HPA functionalization on the stability of ZTO TFTs was investigated. The n-HPA functionalized ZTO TFTs were either measured directly after drying or after post-annealing at 140 °C for 48 hours in flowing nitrogen. Their electrical characteristics were compared with that of non-functionalized ZTO reference TFTs fabricated using identical conditions. We found that the non-functionalized devices had a significant turn-on voltage (V[subscript ON]) shift of ~0.9 V and ~1.5 V for the non-annealed and the post-annealed conditions under positive gate bias stress for 10,000 seconds. The n-HPA modified devices showed very minimal shift in V[subscript ON] (0.1 V), regardless of post-thermal treatment. The VON instabilities were attributed to the interaction of species from the ambient atmosphere with the exposed ZTO back channel during gate voltage stress. These species can either accept or donate electrons resulting in changes in the channel conductance with respect to the applied stress. / Graduation date: 2012 / Access restricted to the OSU Community at author's request from Jan. 6, 2012 - Jan. 6, 2013

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