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In this dissertation, methods to synthesize ZnO are reported. First, zinc oxide nanoparticles were synthesized with small amounts of transition metal ions to create materials called dilute magnetic semiconductors (DMS). We employed a low temperature sol-gel method that produces ZnO nanoparticles of reproducible size and incorporates cobalt, nickel, and manganese ions into the nanoparticles. Conditions were controlled such that a range of amounts of Co, Ni, and Mn were incorporated. The incorporation was tracked by color changes in the white ZnO powder to blue for Co, green for Ni and yellow for Mn. XRD measurements showed the nanoparticles were on the order of 10 nm in diameter and had a wurtzite structure. Magnetic measurements showed a change from diamagnetic to paramagnetic behavior with increasing concentration of metal dopants. Second, formation of ZnO single crystal hexagonal prisms from a sol-gel method is presented. The method required water, zinc acetate, and ethanolamine to create a gel of zinc hydroxide and zinc hydroxide acetate, which upon heating formed single crystal hexagonal prisms. Characterization of the gel was done by XRD as well as XRD high temperature chamber (HTK) to determine the role of temperature in prism formation. SEM images showed hexagonal prisms were of uniform size (0.5 × 2 µm.) TEM and electron diffraction images showed a change from randomly oriented particles to an ordered single crystal after heating. Water and the acetate salt of zinc proved to be critical to prism formation. Lastly, we report absorption and fluorescence properties of synthesized oligothiophenes and oligothiophene-ruthenium complexes that are bound to CdSe nanoparticles. Their ability to act as sensitizers and charge transfer junctions was tested. It was found that fluorescence of CdSe nanoparticles was quenched when they were bound to the oligothiophenes, and that the fluorescence of the oligothiophenes was also quenched. The fluorescence lifetimes of the quenched species were shortened.

Yes / In this article, a novel uniplanar ultra‐wideband (UWB) stop frequency selective surface (FSS) was miniaturized to maximize the gain of a compact UWB monopole antenna for microwave imaging applications. The single‐plane FSS unit cell size was only 0.095λ × 0.095λ for a lower‐operating frequency had been introduced, which was miniaturized by combining a square‐loop with a cross‐dipole on FR4 substrate. The proposed hexagonal antenna was printed on FR4 substrate with coplanar waveguide feed, which was further backed at 21.6 mm by 3 × 3 FSS array. The unit cell was modeled with an equivalent circuit, while the measured characteristics of fabricated FSS array and the antenna prototypes were validated with the simulation outcomes. The FSS displayed transmission magnitude below −10 dB and linear reflection phase over the bandwidth of 2.6 to 11.1 GHz. The proposed antenna prototype achieved excellent gain improvement about 3.5 dBi, unidirectional radiation, and bandwidth of 3.8 to 10.6 GHz. Exceptional agreements were observed between the simulation and the measured outcomes. Hence, a new UWB baggage scanner system was developed to assess the short distance imaging of simulated small metallic objects in handbag model. The system based on the proposed antenna displayed a higher resolution image than the antenna without FSS.

Contemporary diagnostics rely on expensive, time-consuming, and optically-limited mechanisms that prevent at-home point-of-care molecular diagnostics with the accuracy of laboratory tools and the convenience of affordability. In this Thesis, biosensing was explored with commercial two-dimensional (2D) materials which have been investigated extensively over the last two decades yielding a variety of sensor metrics for detecting biomolecules. 2D materials have intrinsic properties that depend on the quality of material and substrate surface being employed. Here, graphene/SiO2 and monolayer hexagonal boron nitride (hBN) capping layer on graphene/SiO2 field-effect transistors (FETs) were used. Until recently, monolayer hBN has not been commercially available at the wafer-scale and has been observed in the literature to augment the properties of graphene-based devices and better control of processing repeatability. The work in this Thesis combines biochemistry with the wafer-scale production and surface-dependent properties of graphene and monolayer hBN/graphene via a FET fabrication process circumventing the use of photoresist. This was done to avoid photoresist resin that may contaminate the transducer surface and contribute to repeatability issues when studying biochemistry with 2D materials. Briefly, surface engineering of graphene/SiO2 and hBN/graphene/SiO2 was done, and the transfer characteristics were measured as a function of either the concentration of protons, genes, or proteins. Compared to bare 2D materials, the pH sensitivity of the shift in Dirac voltage was enhanced to -99 mV/pH when using 8.6 nm of Al2O3 on hBN/graphene/SiO2 FET. Graphene devices were then engineered for sensing SARS-CoV-2 genome with a signal-to-noise ratio of 3 at 100 aM and a linearized sensitivity of +22 mV/molar decade of SARS-CoV-2 ribonucleic acid and a dynamic range of four orders of magnitude. This was done by conjugating single-stranded deoxyribonucleic acid to sub-percolation threshold gold nanofilms deposited directly on the graphene sensing mesa. Finally, the 2D devices were studied for detecting SARS-CoV-2 spike protein after being functionalized with rabbit immunoglobulin G (IgG) monoclonal antibody (mAb). Additionally, preliminary work was done regarding the partial reduction and fragmentation of anti-SARS-CoV-2 spike protein human mAb IgG in an approach to leverage gold-thiol chemistry for covalently bonding the IgG to the 2D sensing mesa. In summary, the utilization of wide- and zero-bandgap nanomaterials may have profound implications in augmenting molecular diagnosis and treatment of disease through economically decentralizing biosensing. / 2024-01-20T00:00:00Z

This work presents a step forward in the use of 2D layered materials (2DLM), specifically hexagonal boron nitride (h-BN), for the fabrication of memristors. In this study, we fabricate, characterize, and use h-BN based memristors with Ag/few-layer h-BN/Ag structure to implement a fully functioning artificial leaky integrate-and-fire neuron on hardware. The devices showed volatile resistive switching behavior with no electro-forming process required, with relatively low VSET and long endurance of beyond 1.5 million cycles. In addition, we present some of the failure mechanisms in these devices with some statistical analyses to understand the causes, as well as a statistical study of both cycle-to-cycle and device-to-device variabilities in 20 devices. Moreover, we study the use of these devices in implementing a functioning artificial leaky integrate-and-fire neuron similar to a biological neuron in the brain. We provide SPICE simulation as well as hardware implementation of the artificial neuron that are in full agreement, showing that our device could be used for such application. Additionally, we study the use of these devices as an activation function for spiking neural networks (SNNs) by providing a SPICE simulation of a fully trained network, where the artificial spiking neuron is connected to the output terminal of a crossbar array. The SPICE simulations provide a proof of concept for using h-BN based memristor for activation function for SNNs.

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The fundamental properties of hexagonal multiferric HoMnO3 films have been thoroughly investigated. The films are grown by pulsed laser deposition on Y:ZrO2(111) substrates. High quality epitaxial HoMnO3 films of 25 { 1000 nm thickness were successfully prepared. The film properties are compared to those of single-crystals. The magnetization measurements revealed that the films show a deviating magnetic behavior from the single-crystals in several ways. For instance, the films have a weakened antiferromagnetic Ho3+ order confirmed from magnetic susceptibility. The difierences are likely to be related to the modified (mostly larger) lattice parameters of films. An approximate phase diagram in comparison with the single-crystal's one is constructed. For multiferroicity investigations, Second Harmonic Generation (SHG; in collaboration with the group of M. Fiebig) has been employed. By SHG, the ferroelectric polar order of the films is obviously confirmed. The ferroelectric switching at room temperature could be clearly demonstrated, whereas leakage of films requires generally a more sophisticated approach. / Die fundamentalen Eigenschaften von hexagonalen multiferroischen HoMnO3 Schichten werden eingehend untersucht. Die dünnen Schichten wurden mittels gepulster Laserdeposition auf Y:ZrO2(111)-Substraten gewachsen. Hochwertige epitaktische HoMnO3-Dünnschichten von 25 { 1000 nm Dicke wurden erfolgreich hergestellt. Die Dünnschichteigenschaften werden mit denen von Einkristallen verglichen. Die Magnitisierungsmessungen ergeben, dass die dünnen Schichten ein von den Einkristallen in verschiedener Weise abweichendes magnetischen Verhalten zeigen. Zum Beispiel haben die dünnen Schichten eine abgeschwächte antiferromagntetische Ho3+ Ordnung, die durch die magnetische Suszeptibilität bestätigt wird. Die Unterschiede sind wahrscheinlich auf die veränderten (meistens grösseren) Gitterparameter der dünnen Schichten zurückzuführen. Ein Phasendiagramm wird zum Vergleich mit Einkristallen konstruiert. Durch Second Harmonic Generation (SHG; in Zusammenarbeit mit der Gruppe von M. Fiebig) wird die ferroelektrische Ordnung der dünnen Schichten eindeutig bestätigt. Das ferroelektrische Umschalten bei Raumtemperatur kann eindeutig nachgewiesen werden, wobei durch den Leckstrom der dünnen Schichten allgemein eine detailliertere Vorgehensweise benötigt wird.

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