• Refine Query
  • Source
  • Publication year
  • to
  • Language
  • 144
  • 41
  • 40
  • 27
  • 23
  • 16
  • 6
  • 5
  • 4
  • 4
  • 3
  • 2
  • 2
  • 2
  • 2
  • Tagged with
  • 384
  • 384
  • 122
  • 108
  • 102
  • 73
  • 68
  • 47
  • 45
  • 43
  • 42
  • 38
  • 37
  • 34
  • 33
  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
51

High Voltage Pulse Measurement System

Ballungay, Angelo J 01 December 2013 (has links)
Using isolation and noise immunity techniques, this thesis designs and constructs a low cost measurement system to safely and accurately measure high voltage, high frequency pulses in harsh EM environments. High voltage pulses apply to medical, plasma, and food industries. The difficulty of accurately measuring high voltage pulses continues to pose an issue. Measuring high voltage systems can cause damage to the system, the measurement system, and the user. High voltage and high frequency pulses create a harsh environment of electromagnetic fields that can disrupt the circuitry of the measurement system and harm the user. Implementing isolation from the high voltage system protects the measurement and user. An ideal pulse has sharp rising and falling edges, introduction high frequencies that prove difficult to sense and characterize. The measurement system requires a sufficiently large bandwidth to accurately measure the pulse edges. Commercial off the shelf pulse measurement systems such as oscilloscopes and multimeters cost thousands of dollars. Cheaper but simpler designs fail to provide isolation for safety. The measurement system in this thesis addresses all of these issues, allowing people to measure and characterize high voltage pulses. Technologies used in this measurement network include optocouplers, transimpedance amplifiers, and analog-to-digital converters. The development process describes design, simulations, characterizations, construction, testing, and troubleshooting. Simulations show expected operations of components and characterizations assist in determining performance parameters of the system. Testing involves performing a low voltage test and a high voltage test and identifying limitations of the design. Finally, this thesis suggests future work to improve performance and lower cost of the measurement system.
52

Studies on Sodium-containing Transition Metal Phosphates for Sodium-ion Batteries / ナトリウムイオン電池用ナトリウム含有遷移金属リン酸塩に関する研究

Nose, Masafumi 23 March 2016 (has links)
京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第19739号 / 工博第4194号 / 新制||工||1647(附属図書館) / 32775 / 京都大学大学院工学研究科物質エネルギー化学専攻 / (主査)教授 安部 武志, 教授 陰山 洋, 教授 作花 哲夫 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM
53

Advanced Electrostatic Engineering for III-Nitride Power Devices

Rahman, Mohammad Wahidur 24 October 2022 (has links)
No description available.
54

Precision Measurement of High Direct Voltage

de Tourreil, Claude 10 1900 (has links)
<p> This thesis describes a new method to measure high direct voltage of the range of 100 KV to 200 KV with very high accuracy. The principle, based on the capacitive divider method, is presented in the first part. </p> <p>This thesis is, however, principally concerned with the design of the low voltage capacitor of the divider and its accuracy. The investigations made lead to an instrument having the accuracy required, which is 0.1 parts per million. </p> / Thesis / Master of Engineering (MEngr)
55

High Voltage DC Converter Systems Modeling, Simulation and Analysis

DALAL, MANISH A. 30 July 2009 (has links)
No description available.
56

Technology for Planar Power Semiconductor Devices Package with Improved Voltage Rating

Xu, Jing 24 March 2009 (has links)
The high-voltage SiC power semiconductor devices have been developed in recent years. They cause an urgent in the need for the power semiconductor packaging to have not only low interconnect resistance, less noise, less parasitic oscillations, improved reliability, and better thermal management, but also High-Voltage (HV) blocking capability. The existing power semiconductor packaging technologies includes wire-bonding interconnect, press pack, flip-chip technology, metal posts interconnected parallel plates structure (MIPPS), dimple array interconnection (DAI), power overlay (POL) technology, and embedded power (EP) technology. None of them meets the requirements of low profile and high voltage rating. The objective of the work in this dissertation is to propose and design a high-voltage power semiconductor device packaging method with low electric field stress and low profile to meet the requirments of high-voltage blocking capability. The main contributions of the work presented in this dissertation are: 1. Understanding the electric field distribution in the package. The power semiconductor packaging is simulated by using Finite Element Analysis (FEA) software. The electric field distribution is known and the locations of high electric field concentration are identified. 2. Development of planar high-voltage power semiconductor device packaging method With the proposed structure in the dissertation, the electric field distribution of a planar device package is improved and the high electric field intensity is relieved. 3. Development of design guidelines for the propsed planar high-voltage device packaging method. The influence of the structure dimensions and the material properties is studied. An optimal design is identified. The design guideline is given. 4. Fabrication and experimental verification of the proposed high-voltage device packaging method A detailed fabrication procedure which follows the design guideline is presented. The fabricated modules are tested by using a high power curve tracer. Test results verify the proposed method. 5. Simplification of the structure model of the proposed device package The package structure model is simplified through the elimination of power semiconductor device internal structure model. The simplified model can be simulated by a non-power device simulator. The simulation results of the simplified model match the simulation results of the complete model very well. / Ph. D.
57

Design and Validation of a High-Density 10 kV Silicon Carbide MOSFET Power Module with Reduced Electric Field Strength and Integrated Common-Mode Screen

Dimarino, Christina Marie 03 January 2019 (has links)
Electricity is the fastest-growing type of end-use energy consumption in the world, and its generation and usage trends are changing. Hence, the power electronics that control the flow and conversion of electrical energy are an important research area. Advanced power electronics with improved efficiency, power density, reliability, and functionality are critical in data center, transportation, motor drive, renewable energy, and grid applications, among others. Wide-bandgap power semiconductors are enabling power electronics to meet these growing demands, and have thus begun appearing in commercial products, such as traction and solar inverters. Looking ahead, even greater strides can be made in medium-voltage systems due to the development of silicon carbide power devices with voltage ratings exceeding 10 kV. The ability of these devices to switch higher voltages faster and with lower losses than existing semiconductor technologies will drastically reduce the size, weight, and complexity of medium-voltage systems. However, these devices also bring new challenges for designers. This dissertation will present a package for 10 kV silicon carbide power MOSFETs that addresses the enhanced electric fields, greater electromagnetic interference, worsened dynamic imbalance, and higher heat flux issues associated with the packaging of these unique devices. Specifically, due to the low and balanced parasitic inductances, the power module prototype is able to switch at record speeds of tens of nanoseconds with negligible ringing and voltage overshoot. An integrated common-mode current screen contains the current that is generated by these fast voltage transients within the power module, rather than flowing to the system ground. This screen connection simultaneously increases the partial discharge inception voltage by reducing the electric field strength at the triple point of the insulating ceramic substrate. Further, field-grading plates are used in the bus bar to reduce the electric field strength at the module terminations. The heat flux is addressed by employing direct-substrate, jet-impingement cooling. The cooler is integrated into the module housing for increased power density. / Ph. D. / Electricity is the fastest-growing type of end-use energy consumption in the world, and its generation and usage trends are changing. Hence, the power electronics that control the flow and conversion of electrical energy are an important research area. Advanced power electronics with improved efficiency, power density, reliability, and functionality are critical in data center, transportation, motor drive, renewable energy, and grid applications, among others. Wide-bandgap power semiconductors are enabling power electronics to meet these growing demands, and have thus begun appearing in commercial products, such as traction and solar inverters. Looking ahead, even greater strides can be made in medium-voltage systems due to the development of silicon carbide power devices with voltage ratings exceeding 10 kV. The ability of these devices to switch higher voltages faster and with lower losses than existing semiconductor technologies will drastically reduce the size, weight, and complexity of medium-voltage systems. However, these devices also bring new challenges for designers. This dissertation will present a package for 10 kV silicon carbide power MOSFETs that addresses the enhanced electric fields, greater electromagnetic interference, worsened dynamic imbalance, and higher heat flux issues associated with the packaging of these unique devices. Specifically, due to the low and balanced parasitic inductances, the power module prototype is able to switch at record speeds of tens of nanoseconds with negligible ringing and voltage overshoot. An integrated common-mode current screen contains the current that is generated by these fast voltage transients within the power module, rather than flowing to the system ground. This screen connection simultaneously increases the partial discharge inception voltage by reducing the electric field strength at the triple point of the insulating ceramic substrate. Further, field-grading plates are used in the bus bar to reduce the electric field strength at the module terminations. The heat flux is addressed by employing direct-substrate, jet-impingement cooling. The cooler is integrated into the module housing for increased power density.
58

Dimensioning Of Corona Control Rings For EHV/UHV Line Hardware And Substations

Chatterjee, Sreenita 10 1900 (has links) (PDF)
High voltage (EHV and UHV) transmission facilitates transfer of large amount of power over long distances. However, due to the inherent geometry, the line and substation hardware of EHV and UHV class generate high electric fields, which results in local ionisation of air called corona discharges. Apart from producing audible noise in the form of frying or hissing sound, corona produces significant electromagnetic interferences in the radio range. The limit for this corona generated Radio Interference (RI) has been stipulated by international standards, which are strictly to be followed. In line and substation hardware, corona control rings are generally employed to limit or avoid corona. Standard dimensions of corona rings are not available for EHV and UHV class. In most of the cases, their design is based on either a trial and error method or based on empirical extrapolation. Only in certain specific cases, the dimensioning of the rings is carried out using electric field calculations. In any of these approaches, the unavoidable surface abrasions, which can lead to corona, are not considered. There are also efforts to account for nominal surface irregularity by using a surface roughness factor, which is highly heuristic. In order to address this practically relevant problem, the present work was taken up. The intended exercise requires accurate field computation and a suitable criterion for checking corona onset. For the first part, the Surface Charge Simulation Method is adopted with newly proposed sub-modelling technique. The surface of the toroid is discretised into curvilinear patches with linear approximation for the surface charge density. Owing to its high accuracy, Galerkin’s method of moments formulation is employed. The problem of singularity encountered in the numerical approach is handled using a method based on Duffy’s transformation. The developed codes have also been validated with standard geometries. After a survey of relevant literature the ‘Critical Avalanche Criteria’ is chosen for its simplicity and applicability to the problem. Through a detailed simulation, the effect of avalanche space charge in reducing the corona onset voltage is found to be around 1.5% and hence it is not considered further. For utilities not interested in a detailed calculation procedure for dimensioning of corona rings, design curves are developed for circular corona rings of both 400 kV and 765 kV class with surface roughness factor in the range 0.8 – 1. In the second part of the work, a methodology for dimensioning is developed wherein the inevitable surface abrasion in the form of minute protrusions can be accounted. It is first shown that even though considerable field intensification occurs at the protrusions, such localised modification need not lead to corona. It is shown that by varying the minor radius of the corona ring, it is possible to get a design where the prescribed surface abrasion does not lead to corona onset. In summary, the present work has successfully developed a reliable methodology for the design of corona rings with prescribed surface abrasions. It involved development of an efficient field computation technique for handling minute surface protrusions and use of appropriate criteria for assessing corona inception. It has also provided design curves for EHV and UHV class corona rings with surface roughness factor specified in the range 0.8 – 1.0.
59

Novel Analytical Techniques For the Assessment of Degradation of Silicone Elastomers in High Voltage Applications

Sovar, Robert D. January 2005 (has links)
Over the last 20 years "composite" insulators have been increasingly used in high voltage applications as an alternative traditional materials. More recently, polydimethylsiloxane (PDMS) have been used as weather sheds on these composite insulators. The main attraction with PDMS is that the surface hydrophobicity can be recovered following pollution or surface discharges. Among the possible mechanisms for recovery the most likely is the migration of low molecular weight silicone oil (LMWS) from the bulk to the surface encapsulating pollutant particles. Although it is widely recognised that the migration of LMWS is the cause of this recovery of hydrophobicity, the mechanism of what actually occurs is not well understood. It is also not known for how long this process will continue. The main objective of this study program was to gain improved understanding of the surface hydrophobic recovery process that is unique to polydimethlysiloxane high-voltage insulators. Fundamental knowledge of this mechanism has been increased through the development of the Contact Angle DRIFT Electrostatic Deposition (CADED) novel analytical technique. This technique enabled study of the degradation of silicone elastomers subjected to high voltage environments by closely following LMWS migration from the bulk material to the surface and linking it to the contact angle measurements. The migration rate data showed that the aged material recovered faster that the virgin material. Differences in the rate and maximum surface levels of silicone were seen between materials from different manufacturers. This has significant implications for the life-time of these materials A model system has been developed to examine LMWS diffusion through the bulk material and into the interface of surface and pollutant. This was achieved by examining theoretical and empirically derived equations and using existing experimental data to better understand the mechanism of recovery. This diffusion was Fickian in the initial stages of recovery. X-ray photoelectron spectroscopy (XPS) and contact angle measurements were used to substantiate the degree of degradation in in-field silicone insulators by quantifying the levels of the major degradation products: silica and silica-like material and alumina.
60

An evaluation of different material line insulators under high voltage AC and bipolar DC excitation in a marine polluted environment

Mouton, Gerton Nicolaas Jacobus 12 1900 (has links)
Thesis (MScEng)--Stellenbosch University, 2012. / ENGLISH ABSTRACT: The worldwide increase in the popularity of high voltage direct current (HVDC) power transmission application has led to questions regarding the performance of high voltage alternating current (HVAC) insulators when energized under HVDC excitation. These questions have led researchers conduct numerous research projects worldwide. A particular question NamPower (the power utility in Namibia) has faced is: how do these insulators perform and age when energized under HVDC excitation in heavily polluted environments? This question was only partly answered by some insulator ageing tests conducted under laboratory conditions for HVDC excitation. However, the natural ageing tests on insulators, which are preferred, have to date been confined predominantly to HVAC excitation voltages. Thus, this research was initiated to investigate the natural ageing performance of insulators under both HVAC and HVDC excitations, when subjected to harsh marine pollution environments. This research project involved performance and ageing tests on three identical sets of line insulators made from different insulator materials, energised under HVAC and both polarities HVDC excitations respectively. The tests were conducted at Koeberg insulator pollution test station (KIPTS), which is a natural marine pollution insulator test station located near Cape Town, along the west coast of South Africa, approximately 50 m from the sea. The set of insulators consisted of EPDM silicone alloy rubber, HTV silicone rubber, RTV silicone rubber coated porcelain, Porcelain and Glass insulators. The HVAC excitation voltage was chosen as 12.7 kV r.m.s. phase-to-ground and it was decided to use a HVDC excitation voltage equal to this value. The research results showed that the insulators made from HTV silicone rubber performed better than the insulators made from EPDM silicone alloy rubber under all excitation voltages. It is also showed that RTV silicone rubber coated porcelain insulators performed better than Glass and Porcelain insulators under all excitation voltages. / AFRIKAANSE OPSOMMING: Die wêreld wye toename in gewildheid van hoë spanning gelyk stroom (HSGS) krag transmisie aplikasie het gelei na vrae oor die effektieweteit van hoë spanning wissel stroom (HSWS) insolators in HSGS aplikasies. Hierdie vrae het gelei na baie navorsings projekte. Een vraag waarmee NamPower (die krag voorsienings maatskapy in Namibia) gekonfronteer was, was hoe gaan die insolators wat onderworpe is aan ’n HSGS toevoer reageer in ’n baie besoedelde omgewing. Hierdie vraag was slegs gedeeltelik beantwoord deur verouderings toetse op insolators wat gedoen is in ’n labaratorium met ’n HSGS toevoer. Inteendeel, die meeste natuurlike verouderings toetse op insolators, soos verkies, is meestal gedoen met ’n HSWS toevoer. Om hierdie rede was hierdie navorsing begin om natuurlike verouderings toetse te doen op insolators onderworpe beide aan HSWS en HSGS toevoere binne ’n marien besoedelde omgewing. Hierdie navorsings projek gaan oor prestering en verouderings toetse op drie, identiese, transmissie lyn insolator stelle, wat onderskeidelik onderworpe was aan HSWS en beide polariteite HSGS toevoere. Die toetse was gedoen by Koeberg insolator besoedeling toets stasie (KIBTS) wat naby Kaapstad geleë is langs die weskus van Suid Africa omtrent 50 m van die see. ’n Stel toets insolators bestaan uit EPDM silikon allooi rubber, HTV silikon rubber, RTV silikon rubber bedekte porselein, Porselein en Glas insolators. Die HSWS waarde waarmee die insolators getoets was, was 12.7 kV w.g.k., fase-na-grond, en dit was besluit om ’n HSGS waarde gelyk aan hierdie spannings waarde te gebruik. Die navorsings resultate wys dat insolators wat gemaak is met HTV silikon rubber presteer beter as insolators wat met EPDM silikon allooi rubber gemaak is onder al die verskillende toevoere. Dit wys ook dat RTV silikon rubber bedekte porselein presteer beter as Porselein en Glas insolators onder al die verskillende toevoere.

Page generated in 0.0747 seconds