Cette thèse a pour objet l'étude de la fiabilité de modules de puissance triphasés à IGBTs 200 A - 600 V, destinés à la construction d'onduleurs de traction pour des applications automobiles hybrides ou électriques. Ces travaux visent à évaluer la tenue de ces modules de puissance en régime de cyclage thermique actif à hautes température, en mettant l'accent sur leur résistance à la fatigue thermomécanique. Deux approches complémentaires ont été mises en oeuvre dans ce but: tests de vieillissement accéléré et modélisation numérique. Une compagne d'essais de vieillissement par cyclage actif a été menée avec des profils de température variés, définis par la température ambiante et la variation de température de jonction des IGBTs, utilisés comme facteurs d'accélération des contraintes. Au cours de ces tests, les composants ont électriquement fonctionné dans des conditions semblables à une application réelle (commande MLI). L'objectif était d'identifier les modes de défaillance, d'estimer l'influence des facteurs d'accélération du vieillissement, et d'évaluer la pertinence des indicateurs de défaillance classiques dans ces conditions de stress thermiques sévères. Aussi, afin de mieux comprendre les mécanismes de défaillance responsables de la fatigue de l'assemblage des modules considérés, une modélisation thermomécanique visant à déterminer l'impact des modèles de comportement mécanique sur la durée de vie estimée des brasures, a été développée. La réponse de l'assemblage à des contraintes de cyclage actif similaires à celles appliquées durant les essais a été évaluée par analyse numérique. Les différentes lois de comportement ont été comparées en termes de contraintes, déformations plastiques, et densité d'énergie plastique dans les brasures. / This thesis is dedicated to reliability investigations led on three-phase 200~A~--~600~V IGBT power modules, designed for building drive inverters for hybrid or electric automotive traction applications. The objective was to evaluate the durability of the studied modules when they withstand power cycling in high temperature environments, and especially their resistance to thermo-mechanical fatigue. Two complementary approaches were considered: accelerated aging experiments and numerical modeling.A series of power cycling tests was carried out over a large range of temperature profiles, defined by the ambient temperature and IGBT junction temperature excursion. These quantities are used as thermal stress acceleration factors. Those experiments were led in realistic electrical conditions (PWM control scheme). They aimed at identifying the failure modes of the target devices, assessing the impact of the acceleration factors on their aging process, and evaluating the suitability of standard aging indicators as damage precursors in such harsh loading conditions. Besides, to better understand the failure mechanisms governing the fatigue life of the modules assembly, a thermo-mechanical modeling focusing on solder joints was built. Our simulation efforts concentrated on the appraisal of constitutive modeling effects on solder joints lifetime estimation. Numerical analysis of the assembly response to power cycling in similar operating conditions as practiced in experiments were performed. Behavior laws were then compared on stress, plastic strain, and strain energy density developed within the joints.

An IGBT/diode model with more accurate characteristics than simple switchis required to serve for EMC issues from converter valve. The purpose of thismaster thesis is to develop an IGBT and diode model to achieve both accuratetransient behavior and fast simulation time during single pulse switchingtest circuit for the 4:5 kV and 2:0 kA StakPakTM IGBT module. A gate unitwhich resembles the ABB gate unit is implemented to obtain a good agreementbetween simulation and measurement. For demonstration and verication, theIGBT/diode model is applied in a simplied arm simulation of full scale ABBGeneration 4 HVDC-VSC converter station and capable of a half cell consistingof 8 series-connected IGBTs and their anti-paralleled diodes. The arm simulationresults are analyzed further for converter station EMC studies.Convergence issue is the most important problem in the whole process of modelimplementation and application. To guarantee the convergence in simulationsome characteristics such as the tail voltage at the end of turn-o is disregarded.But overall, the model is validated and adopted successfully. / En IGBT-/diodmodell med mer exakta egenskaper an en enkel switch kravs foratt hantera EMC-problem fran omvandlarventilen. Syftet med denna magisteruppsatsar att utveckla en IGBT- och diodmodell for att uppna bade noggrantovergaende beteende och snabb simuleringstid under enkelpulsomkopplingstestkretsfor 4,5 kV och 2,0 kA-StakPak IGBT-modulen. En grindenhetsom liknar ABB-grindenheten implementeras for att fa god overensstammelsemellan simulering och matning. For demonstration och veriering, tillampasIGBT-/diodmodellen i en forenklad armsimulering av en fullskalig ABB Generation4 HVDC-VSC-omvandlarstation och med kapacitet for en halvcell bestaendeav 8 seriekopplade IGBT och deras anti-parallellkopplade dioder. Resultatenfran armsimuleringen analyseras vidare for EMC-studier av omvandlarstationen.Konvergensfragan ar det viktigaste problemet i hela processen for modellimplementeringoch -tillampning. For att garantera konvergensen i simulering ignorerasvissa egenskaper sasom svansspanningen vid slutet av avstangning. Mentotalt sett, valideras och antas modellen framgangsrikt.

Les convertisseurs de puissance structurés autour de puces de puissance (IGBT, MOSFET, diodes, ...) sont de plus en plus sollicités dans les systèmes de transport, du ferroviaire à l'aéronautique, en passant par l'automobile. Dans toutes ces applications, la fiabilité des composants constitue encore un point critique. C'est notamment le cas dans la chaîne de traction de véhicules électriques (VE) et hybrides (VH, où les puces sont souvent exposées à de fortes contraintes électriques, thermiques et mécaniques pouvant conduire à la défaillance. Dans ce contexte, l'amélioration des connaissances sur les effets des dégradations des composants semi-conducteurs de puissance et leurs assemblages dus au stress électrothermiques et thermomécaniques est incontournable. En particulier sur la puce semi-conductrice elle-même, siège d'interactions physiques importantes, et en son voisinage immédiat. Les objectifs de la thèse sont de mettre en lumière les stress électro-thermiques et mécaniques dans les puces et leurs effets sur la puce et son voisinage immédiat et à évaluer les effets de dégradations à l'aide de modèles distribués. Les travaux comportent ainsi deux volets. Un volet expérimental original visant la caractérisation électrothermique de puce de puissance (IGBT et diode) sur la base de micro-sections. La piste suivie par cette approche devrait permettre de rendre possible la caractérisation d'un certain nombre de grandeurs physiques (thermiques, électriques et mécaniques) sur les tranches sectionnées des puces sous polarisation (en statique, voire en dynamique) et ainsi contribuer à l'amélioration des connaissances de leur comportement. Ainsi, des cartographies de distributions verticales de température de puce IGBT et diode et de contraintes mécaniques sont présentées. C'est à notre connaissance une voie originale qui devrait permettre de d’ouvrir un large champ d'investigation dans le domaine de la puissance.Le second volet est théorique et consiste à mettre en place un modèle électrothermique distribué de puce IGBT. Cette modélisation comme nous l'envisageons implique de coupler dans un unique environnement (Simplorer) une composante thermique et une composant électrique. Le développement choisi passe par l'utilisation de modèle physique d'IGBT tels que celui de Hefner. Ce modèle est ensuite appliqué pour étudier le rôle et les effets du vieillissement de la métallisation de puce lors de régimes électriques extrêmes répétitifs tels que les courts-circuits. Un aspect original du travail est la démonstration par analyse numérique du mode de défaillance par latch-up dynamique à l'instant de la commande d'ouverture du courant de court-circuit. Ce phénomène bien qu'ayant été observé lors de vieillissement d'IGBT par répétition de courts-circuits n'avait à notre connaissance pas encore été simulé. La modélisation distribuée de la puce et la simulation du phénomène nous a ainsi permis de vérifier certaines hypothèses. / Power modules, organized around power chips (IGBT, MOSFET, diodes, …), are increasingly needed for transportations systems such a rail, aeronautics and automobile. In all these application, power devices reliability is still a critical point. This is particularly the case in the powertrain of hybrid or electric vehicle in which power chips are often subjected to very high electrical and thermal stress levels such as hybrid or electric vehicle, power devices are subjected to very high electrical, thermal and mechanical stress levels which may affect their reliability.Thus, the ability to analyze the coupled phenomena and to accurately predict degradation mechanisms in power semiconductors and their effects due to electro-thermal and thermo-mechanical stress is essential. Especially on the semiconductor chip where significant physical interactions occur and its immediate vicinity. The aim of this work is to highlight the electro-mechanical and thermal stress and their effects on the semiconductor chip and its immediate vicinity, by evaluating the effects of damage using distributed models. This work consists of two parts :An original experimental approach concerning the elctro-thermal characterization of cross section power chips (IGBT and diodes). In this approach, it is exposed for the first time, an original way to characterize vertical thermal distributions inside high power silicon devices under forward bias. Thus, the vertical mapping of temperature and mechanical stress of IGBT and diode chip are presented. The impact of this work that is opens a wide field of investigations in high power semiconductor devices. The second part is theoretical and aims to implementing a distributed electro-thermal model of IGBT chip.The modeling strategy consists on a discretization of the power semiconductor chip in macro-cells with a distributed electro-thermal behavior over the chip area. In case of the IGBT devices each macro-cell is governed by the Hefner model and electrically linked by their terminals. Temperature variable used in these macro-cells are obtained by a nodal 3D-RC thermal model. This allows the distributed electro-thermal problem to be solved homogeneously and simultaneously by a circuit solver such as Simplorer. The aim of this model is to allow the accurate analysis of some effects ine the electrical and thermal coupling over the chip. Especially, this model should allow explaining some effects such as the contacts position over the die metallization and the ageing of the emitter metallization of the chip. In a first step, the model is used to clarify how the current and the temperature map are distributed over the chip according to the relative positions between cells and wire bond contacts on the top-metal during short-circuit operation. In a second step, we will show how dynamic latch-up failures may occur when trying to turn-off a short circuit process.

Este trabalho visa implementar o planejamento tridimensional (3D) para tratamentos de braquiterapia ginecológica. Para isto, foram realizados testes de aceite e comissionamento do equipamento de braquiterapia para verificação de suas funções e para estabelecer um programa de garantia da qualidade periódico, assegurando assim a segurança dos pacientes e dos colaboradores. Uma etapa importante de ser realizada foi procurar um material que pudesse ser utilizado como dummy, já que os aplicadores utilizados não possuem dummy específica. Entretanto, somente com o emprego de uma biblioteca de aplicadores foi possível a reconstrução em imagens de ressonância magnética (RM) com a mesma acurácia da obtida em imagens de tomografia computadorizada (TC). Tal ferramenta torna-se assim imprescindível para a utilização clinica da braquiterapia 3D baseada em imagens de RM. Para validar o planejamento 3D realizou-se comparação das doses recebidas em pontos de avaliação de dose (ICRUBexiga, ICRUReto, Ponto Sig) utilizados em planejamento bidimensional (2D) com doses volumétricas (D0,1cc e D2cc) recebidas por órgãos adjacentes ao tumor. A relação média entre D2cc e dose em ICRUBexiga foi 1,74, que é 22% maior que a relação encontrada na literatura. Esta diferença pode ser explicada devido à diferença de volume inserido na bexiga para o planejamento, 50 cc neste estudo contra 200 cc no estudo realizado na literatura. A relação média entre a D2cc e a dose no ponto de reto, 0,85, está de acordo com o valor encontrado na literatura. A dose D2cc foi 69% maior que a dose do ponto de sigmoide utilizado, porém, não foi possível confrontar este valor, pois o ponto de sigmoide utilizado nos procedimentos com planejamento 2D no serviço não é utilizado em outros serviços. O percentual de dose em 2 cc do sigmóide encontrado foi de 57% da dose de prescrição, mesmo valor encontrado na literatura. Este trabalho possibilitou a implementação de um protocolo de braquiterapia de planejamento 3D viável, utilizando-se imagens de RM para primeira fração e imagens de TC para as frações subsequentes. / This work aims to implement the Tridimensional (3D) planning for gynecological brachytherapy treatments. For this purpose, tests of acceptance and commissioning of brachytherapy equipment were performed to establish a quality and periodic assurance program. For this purpose, an important step was searching for a material to be used as a dummy source, since the applicators dont have any specific dummy. In addition, the validation of the use of applicators library was made for reconstruction in computed tomography (CT) and magnetic resonance imaging (MRI). In order to validate 3D planning, comparison of doses in dose assessment points used in bidimensional (2D) plans have been performed with volumetric doses to adjacent organs to the tumor. Finally, a protocol was established for 3D brachytherapy planning alternately using magnetic resonance image (MRI) and CT images, making evaluation of the dose in the tumor through the recording of MR and CT images. It was not possible to find a suitable material that could be used as dummy in MRI. However, the acquisition of the licenses library for the applicators made possible the 3D planning based on MRI. No correlation was found between volumetric and specific doses analyzed, showing the importance of the implementation of 3D planning. The average ratio between D2cc and ICRUBladder dose was 1,74, 22% higher than the ratio found by others authors. For the rectum, D2cc was less than dose point for 60% of fractions; the average difference was 12,5%. The average ratio between D2cc and point dose rectum, 0,85, is equivalent to the value showed by Kim et al, 0,91. The D2cc for sigmoid was 69% higher than point dose used, unless it was not possible compare this value, since the sigmoid point used in the 2D procedures is not used in others institutes. Relative dose in 2 cc of sigmoid was 57% of the prescription dose, the same value was found by in literature. This work enabled the implementation of a viable brachytherapy 3D protocol planning, using MRI for the first fraction of the treatment and CT images for the subsequent fractions.

Este trabalho visa implementar o planejamento tridimensional (3D) para tratamentos de braquiterapia ginecológica. Para isto, foram realizados testes de aceite e comissionamento do equipamento de braquiterapia para verificação de suas funções e para estabelecer um programa de garantia da qualidade periódico, assegurando assim a segurança dos pacientes e dos colaboradores. Uma etapa importante de ser realizada foi procurar um material que pudesse ser utilizado como dummy, já que os aplicadores utilizados não possuem dummy específica. Entretanto, somente com o emprego de uma biblioteca de aplicadores foi possível a reconstrução em imagens de ressonância magnética (RM) com a mesma acurácia da obtida em imagens de tomografia computadorizada (TC). Tal ferramenta torna-se assim imprescindível para a utilização clinica da braquiterapia 3D baseada em imagens de RM. Para validar o planejamento 3D realizou-se comparação das doses recebidas em pontos de avaliação de dose (ICRUBexiga, ICRUReto, Ponto Sig) utilizados em planejamento bidimensional (2D) com doses volumétricas (D0,1cc e D2cc) recebidas por órgãos adjacentes ao tumor. A relação média entre D2cc e dose em ICRUBexiga foi 1,74, que é 22% maior que a relação encontrada na literatura. Esta diferença pode ser explicada devido à diferença de volume inserido na bexiga para o planejamento, 50 cc neste estudo contra 200 cc no estudo realizado na literatura. A relação média entre a D2cc e a dose no ponto de reto, 0,85, está de acordo com o valor encontrado na literatura. A dose D2cc foi 69% maior que a dose do ponto de sigmoide utilizado, porém, não foi possível confrontar este valor, pois o ponto de sigmoide utilizado nos procedimentos com planejamento 2D no serviço não é utilizado em outros serviços. O percentual de dose em 2 cc do sigmóide encontrado foi de 57% da dose de prescrição, mesmo valor encontrado na literatura. Este trabalho possibilitou a implementação de um protocolo de braquiterapia de planejamento 3D viável, utilizando-se imagens de RM para primeira fração e imagens de TC para as frações subsequentes. / This work aims to implement the Tridimensional (3D) planning for gynecological brachytherapy treatments. For this purpose, tests of acceptance and commissioning of brachytherapy equipment were performed to establish a quality and periodic assurance program. For this purpose, an important step was searching for a material to be used as a dummy source, since the applicators dont have any specific dummy. In addition, the validation of the use of applicators library was made for reconstruction in computed tomography (CT) and magnetic resonance imaging (MRI). In order to validate 3D planning, comparison of doses in dose assessment points used in bidimensional (2D) plans have been performed with volumetric doses to adjacent organs to the tumor. Finally, a protocol was established for 3D brachytherapy planning alternately using magnetic resonance image (MRI) and CT images, making evaluation of the dose in the tumor through the recording of MR and CT images. It was not possible to find a suitable material that could be used as dummy in MRI. However, the acquisition of the licenses library for the applicators made possible the 3D planning based on MRI. No correlation was found between volumetric and specific doses analyzed, showing the importance of the implementation of 3D planning. The average ratio between D2cc and ICRUBladder dose was 1,74, 22% higher than the ratio found by others authors. For the rectum, D2cc was less than dose point for 60% of fractions; the average difference was 12,5%. The average ratio between D2cc and point dose rectum, 0,85, is equivalent to the value showed by Kim et al, 0,91. The D2cc for sigmoid was 69% higher than point dose used, unless it was not possible compare this value, since the sigmoid point used in the 2D procedures is not used in others institutes. Relative dose in 2 cc of sigmoid was 57% of the prescription dose, the same value was found by in literature. This work enabled the implementation of a viable brachytherapy 3D protocol planning, using MRI for the first fraction of the treatment and CT images for the subsequent fractions.

Dans ce mémoire, nous proposons une structure IGBT symétrique en courant et en tension. Cet interrupteur monolithique et commandé par MOS devrait pouvoir remplacer la structure triac, actuellement le seul dispositif bidirectionnel monolithique commercialisé, dans des applications sur le réseau alternatif. En effet, le triac est un composant commandé en courant et nécessite une énergie de commande élevée par rapport aux structures commandées en tension. Nous avons dans un premier temps analysé les principales structures bidirectionnelles commandées en tension proposées dans la littérature afin de déterminer leurs avantages et leurs limitations. Nous avons ensuite étudié, conçu et réalisé la structure IGBT bidirectionnelle en courant et en tension. L'étude menée utilise des simulations 2D afin d'évaluer l'influence des paramètres technologiques et géométriques sur les performances en conduction et en commutation de l'IGBT bidirectionnel. Deux voies technologiques pour la réalisation du composant ont été proposées et intégrées dans la filière IGBT du LAAS. La première voie est basée sur l'utilisation de la technique de photolithographie double face et la deuxième est basée sur la technique de soudure directe Si/Si. Une analyse approfondie des deux techniques nous a permis de mettre en évidence les atouts et les limites de chaque technique. Enfin, nous avons proposé une autre structure bidirectionnelle en courant et en tension, commandée par MOS et à électrodes coplanaires. En effet, cette structure originale a toutes ses électrodes de puissance et de commande sur une seule face du substrat ce qui permet de remédier à la difficulté d'encapsulation rencontrée avec la plupart des structures bidirectionnelles proposées dans la littérature. Cette architecture originale devrait en outre faciliter, en utilisant des techniques d'interconnexion 3D, l'intégration in package du dispositif de puissance avec sa commande. Une analyse du fonctionnement de cette structure est effectu ée à l'aide de simulations 2D et des éléments de conception et de réalisation ont été donnés.

La fiabilité des chaînes de conversion électrique dans les systèmes embarqués est un enjeu critique dans les applications où interviennent des contraintes liées à la sécurité des personnes ou à des aspects économiques non-négligeables. La maintenance préventive permet de surveiller le bon fonctionnement des maillons faibles de la chaîne de conversion, tels que les composants de puissance à semiconducteurs (IGBT à grille en tranchée) présents dans les convertisseurs d'électronique de puissance utilisés dans le domaine du transport. L'objectif de ce travail est d'évaluer la possibilité d'utiliser l'état de l'oxyde de grille comme indicateur de l'état opérationnel du composant, lorsque celui-ci est soumis à des contraintes thermo-électriques représentatives de son fonctionnement. Les résultats obtenus par couplage de différentes techniques non destructives (méthode capacité-tension et méthode de mesure des charges d'espace) mettent en évidence des évolutions de l'oxyde liées à des effets causés par les charges électriques dans les zones de la structure les plus contraintes.L'étude et la modélisation des phénomènes diélectriques dans les couches minces d'oxyde nécessitent de nouvelles méthodes de mesure de la charge électrique à haute résolution spatiale. Dans le présent travail, nous démontrons, à travers des simulations et des résultats expérimentaux, l'applicabilité d'une de ces techniques de caractérisation, « la méthode de l'impulsion thermique », sur ce type de structures de la microélectronique. Sa sensibilité aux fines zones de champ électrique localisées au niveau des interfaces est en particulier mise en évidence, en ouvrant des voies vers la mise au point de nouvelles techniques à haute résolution spatiale, basées sur des stimuli thermiques. / The reliability of the electrical conversion chains in embedded systems is a critical issue in applica-tions where the security of persons and the economic aspects are significant. Preventive maintenance allows monitoring the proper functioning of the « weak links » in the conversion chain, such as power semiconductors components (trench gate IGBT) present in the electronic power converters used in the transport sector. The aim of the present work is to evaluate the possibility of using the gate oxide state as an indicator of the operational state of the component when it is subjected to thermo-electrical stress such as during service. The results obtained by coupled non-destructive techniques (capacitance-voltage and space charges measurement methods) bring out changes in the oxide produced by electrical charges in the most stressed areas of the structure.The study and modeling of dielectric phenomena in thin oxide layers require new high resolution methods for measuring the electric charge. In this work, simulations and experimental results have been used to demonstrate the applicability of one of these techniques, « the Thermal Pulse Method », to this type of microelectronic structures. The electric field at interfaces detected due to the sensitivity of this method is highlighted, opening ways to the development of new techniques with high spatial reso-lution, based on thermal stimuli.

The goal of this master´s thesis is primarily the theoretical analysis of three-phase inverters and subsequent familiarization of the reader with their detailed practical structure. The first part is devoted to the general definition of the power semiconductor converter as such. The following part describes the principle of three-phase pulse width modulation including the widely used principle of scalar control of induction motors. The second half of the thesis is already focused on the practical design of a three-phase inverter for a 50 kW high-speed induction motor. This section explains the problem of sizing and selecting all of the sub-elements of the inverter based on the parameters specified by the end user of the device.

This master’s thesis describes the function and realization of the laboratory test equipment designed for measuring and analysing of collector current iC and voltage uCE courses during the opening and closing process of a power IGBT transistor. The opening and closing times toff and ton of the new power transistor IGBT are changing in the range from tenths to the ones s, so the reading of current iC and voltage uCE proceeds in a very short time. The measuring circuit of this test equipment is based on a short-time discharging of a condenser battery to the inductive load over the measured transistor. Consequently it is possible to replace the power supply whose maximum output power would otherwise have to be in the range of ones MW. In the final part of this thesis there are described properties and design of a high-frequency sensor with the Rogowski coil, which can be used for reading collector current course during opening and closing time of the measured transistor IGBT. Collector current iC and voltage uCE courses can be analysed with a storage oscilloscope.

Power electronics, which fully covers the generation, conversion, transmission and usage of electrical energy, is a key technology for human welfare. With the development of technologies, the requirements on the reliability of power electronic systems are keep increasing. Long term operation under harsh environments is often accompanied by higher switching frequency and higher power density. To allow a reliable and sustainable performance of the power electronic systems, precise lifetime estimation of the power semiconductor devices is of significant importance. This work covers some aspects in the lifetime prediction of power semiconductor devices, especially IGBT and diode, in power module and transfer-molded discrete package. Difference in device temperature determination was illustrated using analytical calculation, simulation and measurement. In addition, temperature calculation in the frequency domain was demonstrated which gives benefits in the application with several hundred devices. Furthermore, different control strategies in the power cycling test were compared. The linear cumulative damage theory was validated by using the power cycling test. For the high power IGBT module used in the MMC HVDC application, power cycling lifetime with 50 Hz heating processes was investigated. For the transfer-molded discrete package, the first lifetime model with comparable scope like the lifetime model of power modules was proposed. / Leistungselektronik, welche direkt relevant für die Erzeugung, Umwandlung, Übertragung und Nutzung elektrischer Energie ist, ist eine Schlüsseltechnologie für das Wohl der Menschen. Mit der Entwicklung von Technologien steigen die Anforderungen an die Zuverlässigkeit leistungselektronischer Systeme. Der Langzeitbetrieb unter rauen Umgebungsbedingungen geht häufig mit einer höheren Schaltfrequenz und einer höheren Leistungsdichte einher. Um eine zuverlässige und nachhaltige Operation der leistungselektronischen Systeme zu ermöglichen, ist die genaue Lebensdauerabschätzung der Halbleiter-Leistungsbauelemente von großer Bedeutung. Diese Arbeit befasst sich mit einigen Aspekten der Lebensdauerabschätzung von den Halbleiter-Leistungsbauelementen. Unterschied in der Temperaturabstimmung der Halbleiter-Leistungsbauelemente wird anhand von Berechnung, Simulation und Messung veranschaulicht. Darüber hinaus bietet die Temperaturberechnung im Frequenzbereich Vorteile bei der Anwendung mit mehreren hundert Bauelementen. Darüber hinaus wurden verschiedene Regelstrategien im Lastwechseltest verglichen. Die lineare kumulative Alterungstheorie wurde unter Verwendung des Lastwechseltests validiert. Für das in der MMC-HGÜ-Anwendung verwendete Hochleistungs-IGBT-Modul wurden Alterungsprozesse bei 50 Hz Erwärmung untersucht. Für das Diskrete-Gehäuse wird das erste Lebensdauermodell vorgestellt, welches ein vergleichbares Anwendungsbereich wie das Lebensdauermodell von Leistungsmodulen hat.