Techn. Hochsch., Diss., 2005--Aachen.

The use of IGBT power modules in the automotive industry is becoming increasingly common as manufacturers develop more hybrid and all electric vehicles. In an industry such as this, the reliability of a component is critical and vehicle manufacturers have conducted much research into diagnostic and prognostic systems for internal combustion engines that run in real time on the vehicle to determine when components will fail. Power electronic components do not have similar prognostics available. The traditional use of power electronic modules has been in applications where their life or duty cycle is well defined, and accelerated life tests are carried out to determine a mean time to failure. This type of prognostics is not appropriate for the automotive industry because the operating cycle of the vehicle varies greatly, both in driving style, duty cycle and environment. A new type of prognostics is therefore required which will calculate the life remaining in the power module in real time as the device is being used.Because of the high robustness of IGBT power modules, testing for time to failure can be a very lengthy process. A novel procedure and test rig based on Peltier effect thermoelectric coolers was developed, which can automatically temperature cycle IGBT power modules in a very short time and determine their life expectancy, all within their operating specifications. This was tested using several power modules. The failure modes of IGBT power modules are also investigated with a view to developing a failure prediction algorithm. The causes of failure are analysed and a prognostics algorithm is proposed. This prognostics algorithm uses thermal cycle history as a means to predict the life consumed for the power module. The data obtained by the accelerated life tests is used to calculate the coefficients for the prognostic algorithm. A simulation of a vehicle drive cycle is used to show how the prognostics algorithm can be used, and a value indicating the extent to which the IGBT power module has aged is calculated. It is also proved that by intelligently controlling the heat flowing from the heat sink on which the power module is mounted, the life of the IGBT power module can be increased by approximately three times.Hardware and software were developed to implement the health monitoring algorithm. Measurement and control circuits were designed, built and tested together with software that processes the input data, records the thermal cycle history of the IGBT power modules and calculates a value of age for the IGBT power modules in real time. This was tested on several modules to prove the validity of the algorithm.The new algorithms and methodology developed could enable vehicle manufacturers to predict the failure of power modules in hybrid and all electric vehicles. This technology could also benefit other industries such as the renewables (eg wind turbines) and aerospace, where the industry is moving towards all electric aircraft.

L'influence des radiations naturelles sur les composants électroniques est un sujet qui est bien connu des acteurs du spatial et de l'aéronautique. Il n'en va pas de même pour les industries des transports (automobile, ferroviaire) alors que la vulnérabilité des composants « au sol » est bien réelle.Avec le développement massif des véhicules hybrides/électriques, les composants de puissance à semi-conducteur tels les IGBT (Transistor Bipolaire à Grille Isolée) vont être utilisés en très grand nombre dans les convertisseurs d'énergie utilisés comme maillons de fonctions critiques. La fiabilité de ces composants, basés sur des technologies récentes, contrairement à ce qui est utilisé pour les applications spatiales, doit être assurée.Le travail de thèse s'inscrit dans ce cadre et vise à identifier les phénomènes de défaillances des IGBT, composants incontournables dans les systèmes de conversion de l'énergie avec l'outil de simulation TCAD. Leur fiabilité sera estimée pour l'environnement radiatif naturel au niveau du sol afin de déterminer les probabilités de défaillances au niveau du composant et, plus tard, au niveau du système. Après avoir appréhendé les mécanismes de destruction de ces technologies pour lesquelles peu de travaux ont été effectués, il s'agira de quantifier le risque auquel sont exposés les systèmes électroniques face à l'environnement radiatif au sol. Les travaux présentés dans ce manuscrit, constituent une première étape visant à comprendre les différents mécanismes de défaillance des composants de puissance vis-à-vis des effets singuliers. L'objectif recherché à plus lointaine échéance est de déterminer dans quelle mesure ces mécanismes physiques complexes peuvent être simplifiés afin d'ouvrir la voie au développement de modèles de prédiction compactes. Un tel développement pourrait permettre de faire parvenir les outils de prédiction dédiés aux composants de puissance à la même maturité que ceux développés pour l'électronique numérique. / The influence of natural radiation on electronic devices is a topic that is well-known in the space and aeronautics areas. This is not true for the transportation industries (automotive, rail) while the vulnerability of components in "ground" is real.With the massive development of hybrid/electric vehicles, power components such as semiconductor IGBT (Insulated Gate Bipolar Transistor) and power MOS (Metal Oxide Semiconductor) will be used in large numbers in the power converters used in critical functions. The reliability of these components, based on recent technology, contrary to what is used for space applications must be assured.This work is aimed to assess the sensitivity of the investigated power devices considered as the core of the systems on energy conversion and identify physical phenomena inducing failure triggering and understand the different failure mechanisms of power components toward single event effects using TCAD simulation tool. The long term objective is to simplify these complex physical processes in order to develop prediction compact models. Such a development could be useful to achieve prediction tools dedicated to power components at the same maturity levels as those developed for digital electronics.

This work presents different novel gate drive unit (GDU) concepts for IGBT and reverse conducting IGBT (RC-IGBT). They have been experimentally tested with medium voltage class IGBT modules (1200...1700V/650…1400A) and a RC-IGBT module (1200V/200A). The switching behaviour of the RC-IGBT was investigated, and a new trigger pulse pattern to drive the RC-IGBT was developed, designed and implemented. The experimental results showed that the switching losses were reduced by 20% in the RC-IGBT compared to the switching losses of a standard diode. Two novel schemes are introduced to estimate the collector current through the IGBT, based on the measurement of the voltage across the internal stray inductance of the IGBT module. Furthermore, a GDU concept was derived to balance the on-state collector currents of parallel-connected IGBTs, reducing the current imbalance to 5%. Also, a new fast short circuit protection method (FSCP) for IGBT modules was developed, designed and implemented in another GDU, allowing turning-off the considered IGBT in less than 1μs, reducing the IGBT stress. Another scheme implemented in a GDU features an improved gate current switching profile of the IGBT, which reduces the switching losses by 25% compared to the standard switching method. In order to reduce the conduction losses, a GDU with an increased turn-on gate-emitter voltage (larger than 20 V) was investigated. In the investigated IGBT, the on-state losses were reduced by 18% when a gate-emitter voltage of 35V is used compared to when a gate-emitter voltage of 15V is used. All these new GDU concepts have been implemented with a simple and inexpensive electronic circuitry, which is an important feature for a possible industrial implementation.

Les composants semi-conducteurs de puissance sont aujourd'hui au c?ur des systèmes de conversion d'énergie et sont de plus en plus employés dans le domaine des transports, notamment dans des applications critiques induites par l'émergence des véhicules hybrides et d'avions plus électriques. Durant l'exploitation des systèmes de conversion d'énergie, des contraintes significatives sont imposées aux composants semi-conducteurs de puissance, dégradant ainsi leur fonctionnement. Dans une application critique, ces dégradations peuvent activer la défaillance d'un système électrique et ainsi avoir des conséquences graves d'un point de vue économique et de sécurité. Il existe alors une forte demande concernant une compréhension des modes de défaillances et des mécanismes de vieillissement des composants semi-conducteurs de puissance. Il en est de même pour le développement de nouvelles techniques de caractérisations pour le suivi de leur vieillissement. Le suivi de l'évolution de paramètres de l'oxyde de grille de véhicules tests par le biais de la méthode Capacité-Tension ou C(V) - couramment employée en micro-électronique - et de la méthode de l'onde thermique ou MOT - développée au sein du Groupe Énergie et Matériaux de l'IES -, ainsi que leur adaptation à des composants semi-conducteurs de puissance, constituent l'essentiel du travail de cette thèse. Le couplage de la MOT à la C(V) a permis de localiser sommairement les charges injectées dans l'oxyde de grille des véhicules tests lorsqu'ils ont été soumis à des contraintes électriques similaires à celles subies dans les systèmes de conversion d'énergie. / Power semi-conductor devices are increasingly used as key parts of embedded power conversion systems in critical applications such as aerospace industry and ground transport. In such critical applications, these devices are submitted to harsh electrical, thermal and mechanical environments stresses which may significantly alter their reliability. An embedded power conversion system failure due to a power semi-conductor device breakdown may induce catastrophic results in terms of human safety, as well as economical dimensions. There is, indeed, a continuous demand on an increasing knowledge concerning the failure modes and the ageing mechanisms of power semi-conductor devices, as well as for development of new characterization techniques for ageing monitoring. The greatest part of the present work is focused on the monitoring of gate oxide properties evolutions of samples structures using the Capacitance-Voltage method (C-V method) -mainly employed in microelectronics- and the Thermal Step Method (TSM) -developed in Energy and Materials Group of IES-, as well as applying them to power semi-conductor devices. Coupling TSM and C-V method has allowed to approximately locate injected charges in the gate oxide of sample devices when submitted to electrical stresses comparable to the ones submitted to power semi-conductor devices.

The diploma thesis is dealing with the area of controlling and safety technology for the railway transportation. The problems of the design and practical realization of an functional sample of switching unit supplying the ends of a track circuit are solved here. The switching unit enables the operation of the train control system. The outline of the design is formed by a power switch operated with a microprocessor. In addition, for the increase in safety the switching unit contains a control processor, which is controlling the right function of a work microprocessor and the failure-free state of a power switch.

This work presents different novel gate drive unit (GDU) concepts for IGBT and reverse conducting IGBT (RC-IGBT). They have been experimentally tested with medium voltage class IGBT modules (1200...1700V/650…1400A) and a RC-IGBT module (1200V/200A). The switching behaviour of the RC-IGBT was investigated, and a new trigger pulse pattern to drive the RC-IGBT was developed, designed and implemented. The experimental results showed that the switching losses were reduced by 20% in the RC-IGBT compared to the switching losses of a standard diode. Two novel schemes are introduced to estimate the collector current through the IGBT, based on the measurement of the voltage across the internal stray inductance of the IGBT module. Furthermore, a GDU concept was derived to balance the on-state collector currents of parallel-connected IGBTs, reducing the current imbalance to 5%. Also, a new fast short circuit protection method (FSCP) for IGBT modules was developed, designed and implemented in another GDU, allowing turning-off the considered IGBT in less than 1μs, reducing the IGBT stress. Another scheme implemented in a GDU features an improved gate current switching profile of the IGBT, which reduces the switching losses by 25% compared to the standard switching method. In order to reduce the conduction losses, a GDU with an increased turn-on gate-emitter voltage (larger than 20 V) was investigated. In the investigated IGBT, the on-state losses were reduced by 18% when a gate-emitter voltage of 35V is used compared to when a gate-emitter voltage of 15V is used. All these new GDU concepts have been implemented with a simple and inexpensive electronic circuitry, which is an important feature for a possible industrial implementation.

Semiconductor devices are widely used in the automotive industry, and they are key components of the inverter and the converter in an electric vehicle. Thus, the concern of protecting the inverter and the converter from damaging operation has been raised. The junction temperature is one of the main considerations. It is directly related to the inverter power loss and overheat which can lead to fatigue or even failures. Therefore, to protect the semiconductor device from thermal runaway and apply active thermal control, the junction temperature must be obtained.To derive the junction temperature of an Insulated-Gate Bipolar Transistor (IGBT) and a diode, an instant model is proposed.   The instant model updates the junction temperature at the PWM switching frequency (around 2-5 kHz in this thesis). Compared with the traditional algorithm which calculates the average temperature over one fundamental cycle, the instant algorithm can show the instant temperature swing.  A high power IGBT module, FF1200R12IE5 Infineon, is selected to verify the algorithm with temperature results from IPOSIM and Power HIL tests. The temperature deviations for different cases are below 6 ◦C and the relative errors are below 10 %.With an accurate estimation of the junction temperature, the current limit is set to avoid that average temperature, maximum temperature and temperature swing exceed their limits. The currentlimits are derived from the curve/ surface fitting method. / Halvledare används mycket i fordonsindustrin, och är viktiga komponenter i växelriktare i elektriska fordon. Vikten av att skydda växelriktarna från skadliga driftsförhållanden ökat. Övergångstempe- raturen hos halvledarna är en av de viktigaste parametern att beakta. Den är direkt relaterad till väx- elriktarens förluster, vilket kan leda till termisk utmattning, och i värsta fall haveri. För att skydda halvledarna från termisk rusning och tillämpa aktiv termisk styrning måste övergångstemperaturen kunna uppskattas.För att härleda övergångstemperaturen hos en Insulated-Gate-Bipolar Transistor (IGBT) och en diod föreslås en momentan modell. Den momentana modellen uppdaterar övergångstemperaturen vid PWM-frekvensen (cirka 2-5 kHz i denna avhandling). Jämfört med den traditionella algoritmen som beräknar medeltemperaturen under en grundtonscykel kan den momentana algoritmen visa den omedelbara temperatursvängningen. En IGBT-modul, Infineon FF1200R12IE5, valdes för att verifiera algoritmen mot resultat från simuleringar och mätningar. Temperaturavvikelserna för olika fall är under 6 ◦C och de relativa felen är under 10 %.Med en noggrann uppskattning av övergångstemperaturen kan strömgränsen ställas in för att undvika att medel- och maxtemperaturen och temperatursvängningenen överskrider sina gränser.Strömgränserna härleds genom kurv- och ytanpassning.

The use of Insulated Gate Bipolar Transistors (IGBT) have enabled better switching performance than the Metal Oxide Semiconductor Field effect Transistor (MOSFET) in medium to high power applications due to their lower on-state power loss and higher current densities. The power ratings of IGBTs are slowly increasing and are envisaged to replace thyristors in medium power applications such as High Voltage Direct Current (HVDC) inverter systems and traction drive controls. Devices such as the MOS Controlled Thyristor (MCT) and Emitter Switched Thyristor (EST) were developed in an effort to further simplify drive requirements of thyristors by incorporating a voltage controlled MOS gate into the thyristor structure. However, the MCT is unable to achieve controlled current saturation which is a desirable characteristic of power switching devices while the EST has only limited control. The IGBT can achieve current saturation, however, due to the transistor based structure it exhibits a larger on-state voltage in high power applications compared with thyristor based devices. MOS Gated Thyristor (MGT) devices are a promising alternative to transistor based devices as they exhibit a lower forward voltage drop and improved current densities. This current research focuses on the Clustered Insulated Gate Bipolar Transistor (CIGBT) whilst being operated under soft-switching regimes. The CIGBT is a MOS gated thyristor device that exhibits a unique self-clamping feature that protects cathode cells from high anode voltages under all operating conditions. The self-clamping feature also enables current saturation at high gate biases and provides low switching losses. Its low on-state voltage and high voltage blocking capabilities make the CIGBT suitable as a contender to the IGBT in medium to high power switching applications. For the first time, the CIGBT has been operated under soft-switching regimes and transient over-voltages at turn-on have been witnessed which have been found to be associated with a number of factors. The internal dynamics of the CIGBT have been analysed using 2D numerical simulations and it has been shown that a major influence on the peak voltage is the P well spacing within the CIGBT structure. For example, Small adjacent P well spacings within the device results in an inability for the CIGBT to switch iv on correctly. Further to this, implant concentrations of the n well region during device fabrication can also affect the turn-on transients. Despite this, the CIGBT has been experimental analysed under soft-switching conditions and found to outperform the IGBT by 12% and 27% for on-state voltage drop and total energy losses respectively. Turn off current bumps have been seen whilst switching the device in zero voltage and zero current switching mode of operation and the internal dynamics have been analysed to show the influence upon the current at turn off. Preliminary results on the Trench CIGBT (TCIGBT) under soft switching conditions has also been analysed for the first time and was found to have a reduced peak over-voltage and better switching performance than the planer CIGBT. Through optimisation of the CIGBT structure and fabrication process, it is seen that the device will become a suitable replacement to IGBT in medium power application.

<p>This master thesis aim to design and evaluate a high power 3-phase DC/AC and AC/AC converter. The purpose is to use it for an electric motor in an aircraft possibly driving electric actuators, a propeller in an UAV or a small vehicle. Factors such as power loss and weight are of importance and will be estimated using known models supplied by various manufacturers of components. Different topologies of semiconductors suitable for this purpose are examined and presented. Extensive resources have been put to properly select the most suitable switching device according to their power loss and weight.</p><p>The need for filters and protective circuits will be estimated according to regulations of common military avionic standards and will be included in the resulting estimation along with simulations to evaluate their need and importance. Snubber circuits will be presented and their specific ability to reduce voltage transients and switching losses will be examined along with some simulations to illustrate their performance. In the final part an estimation of efficiency and weight of higher and lower power models of the same inverter has been made using the same procedure as presented in this paper. Engineering rules have been formed from these estimations to simply be able to calculate the proportions of a future converter of arbitrary rated power.</p>