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Thesis (M. Sc.)--University of Hong Kong, 1996. / Includes bibliographical references.

Texte remanié de: Diss.--München, 1983--Philosophische Fakultät. / Bibliogr. p. IX-XV. Index.

The aim of this work is to investigate the possibility that Francis Bacon was a contributor in the writing of three Shakespeare plays: The Comedy of Errors, Love’s Labour’s Lost, and The Tempest. In order to proceed, I develop a new Rare Collocation Profiling (RCP) method using Chadwick–Healey’s Early English Books Online (EEBO) database to identify those collocations in a target text that are rare. I then list the probable sources of a target and the writers who possibly borrowed from it. In this way, I obtain a DNA-type profile in relation to the target text for all frequently occurring writers that are returned by the searches. However, while collocation analysis is traditionally confined to a database of known dramatists, I widen the search to include all fully searchable texts in EEBO. My test case is the long poem A Funeral Elegye (1612), and my method supports Brian Vickers’ conclusion that John Ford is a better authorial candidate than William Shakespeare. I also analyse two previously unattributed pamphlets: the Gesta Grayorum (1688), an account of the 1594–5 Gray’s Inn revels; and the True Declaration (1610), a Virginia Company propaganda pamphlet, and I conclude from my method that Francis Bacon is the only candidate for having compiled the former and that he was a major contributor to the latter. Two of the Shakespeare plays, The Comedy of Errors and Love’s Labour’s Lost have previously been associated with the 1594–5 Gray’s Inn revels. I analyse the three volumes of Nelson and Elliott’s Records of Early English Drama: Inns of Court (NE) to find that the number of professional companies that played at the Inns of Court (one of which is Gray’s Inn) before 1606 has been overestimated. A document shows that Shakespeare’s company, the Lord Chamberlain’s Men, were playing at Greenwich on 28 December 1594 when, as the Gesta Grayorum reports, The Comedy of Errors was performed at Gray’s Inn, and the circumstances do not allow Shakespeare to have been present. The evidence suggests that the play was first enacted by Inns of Court players rather than the Lord Chamberlain’s Men. Inns of Court plays were often based on translations of classical works and usually commented on the succession question. I argue that The Comedy of Errors displays both of these characteristics and so was likely written with the revels in mind. Also, due to certain rare parallels between Francis Bacon’s speeches at the revels and Love’s Labour’s Lost, I claim that the play was intended for performance there but cancelled. Referring to the results of RCP, I suggest that Francis Bacon not only compiled the Gesta Grayorum but also contributed to the writing of these two plays. I also show that my new method identifies two non-members of the Inns of Court, Thomas Heywood and Thomas Dekker, as later revisers of these plays. In the final chapters, I improve on the dating evidence for The Tempest by showing that Caliban’s speech on edible items relies on knowledge of the Bermudan cahow, a bird whose behaviour was unknown in England before September 1610. The application of RCP to The Tempest confirms that William Strachey’s ‘True Reportory’, a 20,000-word secret report sent back from the Virginia colony to the London Virginia Company, was beyond reasonable doubt a source for the play. RCP also reveals Francis Bacon as a contributor to the writing of the play. I also apply the new method to the Virginia Company’s True Declaration, a pamphlet that almost certainly relied on ‘True Reportory’, and reveal Bacon as a contributor. This means that he must have inspected Strachey’s ‘True Reportory’, a source for The Tempest. I give strong reasons why Shakespeare would have been prohibited from gaining access to Strachey’s restricted company report. Finally, I suggest that The Tempest was used as a political tool to promote England’s influence in the New World, and although Strachey’s ‘True Reportory’ could not have been released for inspection, the Virginia Company must have cooperated in supplying information for the writing of the play.

No description available.

The subject of this diploma thesis is survey of former traveler´s inn called Peklo and upcoming creation of its building documentation. In the first part there is an introduction of the former pub and there is also a chapter about building measuring network. In the next chapter is described measurement and a data processing. The final part of this diploma thesis is dedicated to description of creation required documents, which are clear sketch of measuring network, floor plan, view of vertical section, outside views of the pub from two different sides and a thematical map. The final documentations will be delivered to the current owner of the house and will be used for the planned reconstruction.

This study assesses the relative strengths and weaknesses of a hotel, Holiday Inn, as viewed by two customer segments: business travelers and vacationers. The evaluation is based on the analytical framework of importance-performance analysis using 28 hotel attributes. Despite some differences, there are a number of similarities between the two segments in terms of the attributes they rely on when choosing a hotel and how they evaluate Holiday Inn on these attributes. These insights are important to the management in designing pointed strategies to better serve the needs of their guests.

This paper examines the political, economic and social influences that contributed to the development of the Madonna Inn in San Luis Obispo. I provide a brief history of the hotel industry and place the Madonna Inn within the historiography and argue that the nexus of three elements in the 1950s and 1960s led to the growth and popularity of the Madonna Inn: fear of nuclear war, growth of the middle class, and the rise of automobile culture in America.

The purpose of this thesis is to investigate the theory and practice of regenerative design and how the concepts apply to scales of design. Ultimately, it examines the applicability and limitations of these principles in a non-traditional resort development. The theories of John Lyle, Robert Thayer, and William McDonough are examined to assist in the establishment of a new framework for regenerative design which is can be used in the design process or evaluation. Case studies of the Center for Regenerative Studies, the Ford Rouge Plant and the Loreto Bay Resort were under taken to evaluate the success of current built works utilizing the new framework. Finally, the development of a regenerative resort community at Mountain Lake, in Giles County, Virginia, is undertaken as a vehicle to demonstrate the process of development and evaluation under the integrated regenerative framework. Regenerative design is a form of sustainable design which incorporates the interlocking of communities with the natural ecological cycles, the larger society and environmental costs. The overall goals for regenerative developments are to design communities which exist within natural limits and are interconnected to the regional society for needs outside the given site. Regenerative design incorporates diverse ecological, cultural, social and economical systems while maintaining their integrity within a dynamic whole. The integrated framework is an effort to direct site specific design through a flexible and extensive structure. There are two parts to this regenerative design framework. The first is a conceptual model for regenerative design, utilizing the existing idea of regenerative design rooted in sustainability, and overlays it with design driven elements of culture, experience, and education. The second element of the framework defines a set of strategies for the design process and a means of evaluating a design. / Master of Landscape Architecture

Group III-nitride semiconductors have received much research attention and witnessed a significant development due to their ample applications in solid-state lighting and high-power/high-frequency electronics. Numerous growth methods were explored to achieve device quality epitaxial III-nitride semiconductors. Among the growth methods for III-nitride semiconductors, molecular beam epitaxy provides advantages such as formation of abrupt interfaces and in-situ monitoring of growth. The present research work focuses on the growth and characterizations of III-nitride based epitaxial films, nanostructures and heterostructures on c-sapphire substrate using plasma-assisted molecular beam epitaxy system. The correlation between structural, optical and electrical properties of III-nitride semiconductors would be extremely useful. The interfaces of the metal/semiconductor and semiconductor heterostructures are very important in the performance of semiconductor devices. In this regard, the electrical transport studies of metal/semiconductor and semiconductor heterostructures have been carried out. Besides, studies involved with the defect induced room temperature ferromagnetism of GaN films and InN nano-structures have also been carried out. The thesis is organized in eight different chapters and a brief overview of each chapter is given below. Chapter 1 provides a brief introduction on physical properties of group III-nitride semiconductors. It also describes the importance of III-nitride heterostructures in the operation of optoelectronic devices. In addition, it also includes the current strategy of the emergence of room temperature ferromagnetism in III-nitride semiconductors. Chapter 2 deals with the basic working principles of molecular beam epitaxy system and different characterization tools employed in the present work. Chapter 3 describes the growth of GaN films on c-sapphire by plasma-assisted molecular beam epitaxy. The effects of N/Ga flux ratio on structural, morphological and optical properties have been studied. The flux ratio plays a major role in controlling crystal quality, morphology and emission properties of GaN films. The dislocation density is found to increase with increase in N/Ga flux ratio. The surface morphologies of the films as seen by scanning electron microscopy show pits on the surface and found that the pit density on the surface increases with flux ratio. The room temperature photoluminescence study reveals the shift in band-edge emission towards the lower energy with increase in N/Ga flux ratio. This is believed to arise from the reduction in compressive stress in the GaN films as it is evidenced by room temperature Raman study. The transport studies on the Pt/GaN Schottky diodes showed a significant increase in leakage current with an increase in N/Ga ratio and is found to be caused by the increase in dislocation density in the GaN films. Chapter 4 deals with the fabrication and characterization of Au/GaN Schottky diodes. The temperature dependent current–voltage measurements have been used to determine the current transport mechanism in Schottky diodes. The barrier height (φb) and the ideality factor (η) are estimated from the thermionic emission model and are found to be temperature dependent in nature, indicating the existence of barrier height inhomogeneities at the Au/GaN interface. The conventional Richardson plot of ln(Is/T2) versus 1/kT gives Richardson constant value of 3.23×10-5 Acm-2 K-2, which is much lower than the known value of 26.4 Acm-2 K-2 for GaN. Such discrepancy of Richardson constant value was attributed to the existence of barrier height inhomogeneities at the Au/GaN interface. The modified Richardson plot of ln(Is/T2)-q2σs2/2k2T2 versus q/kT, by assuming a Gaussian distribution of barrier heights at the Au/GaN interface, provides the Schottky barrier height of 1.47 eV and Richardson constant value of 38.8 Acm-2 K-2 which is very close to the theatrical value of Richardson constant. The temperature dependence of barrier height is interpreted on the basis of existence of the Gaussian distribution of the barrier heights due to the barrier height inhomogeneities at the Au/GaN interface. Chapter 5 addresses on the influence of GaN underlayer thickness on structural, electrical and optical properties of InN thin films grown using plasma-assisted molecular beam epitaxy. The high resolution X-ray diffraction study reveals superior crystalline quality for the InN film grown on thicker GaN film. The electronic and optical properties seem to be greatly influenced by the structural quality of the films, as can be evidenced from Hall measurement and optical absorption spectroscopy. Also, we present the studies involving the dependence of structural, electrical and optical properties of InN films, grown on thicker GaN films, on growth temperature. The optical absorption edge of InN film is found to be strongly dependent on carrier concentration. Kane’s k.p model is used to describe the dependence of optical absorption edge on carrier concentration by considering the non-parabolic dispersion relation for carrier in the conduction band. Chapter 6 deals with the analysis of the temperature dependent current transport mechanisms in InN/GaN heterostructure based Schottky junctions. The barrier height (φb) and the ideality factor (η) of the InN/GaN Schottky junctions are found to be temperature dependent. The temperature dependence of the barrier height indicates that the Schottky barrier height is inhomogeneous in nature at the heterostructure interface. The higher value of the ideality factor and its temperature dependence suggest that the current transport is primarily dominated by thermionic field emission (TFE) other than thermionic emission (TE). The room temperature barrier height and the ideality factor obtained by TFE model are 1.43 eV and 1.21, respectively. Chapter 7 focuses on the defect induced room temperature ferromagnetism in Ga deficient GaN epitaxial films and InN nano-structures grown on c-sapphire substrate by using plasma-assisted molecular beam epitaxy. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm-1 in Raman spectra confirms the existence of Ga vacancies in GaN films. The ferromagnetism in Ga deficient GaN films is believed to originate from the polarization of the unpaired 2p electrons of nitrogen surrounding the Ga vacancy. The InN nano-structures of different size are grown on sapphire substrate, the structural and magnetic properties are studied. The room temperature magnetization measurement of InN nano-structures exhibits the ferromagnetic behavior. The saturation magnetization is found to be strongly dependent on the size of the nano-structures. Finally, Chapter 8 gives the summary of the present work and the scope for future work in this area of research.