Objective: The cytotoxic property of anti-EGFR-1 monoclonal-antibody nimotuzumab modified with nuclear localization sequence and radiolabeled with 111In was evaluated in trastuzumab-resistant breast cancer cells. Methods: 111In-nimotuzumab-NLS was constructed and its immunoreactivity was determined. Cellular and nuclear uptake was evaluated by cell fractionation. Finally, the cytotoxicity of conjugates (111In-nimotuzumab/111In-nimotuzumab-NLS) was studied by clonogenic assays. Results: The immunoreactivity of 111In-nimotuzumab-NLS was conserved. 111In-nimotuzumab-NLS exhibited 2-fold higher nuclear translocation as compared to 111In-nimotuzumab in MDA-MB-468 cells. Nuclear importation of 111In-nimotuzumab-NLS in MDA-MB-468 cells was 4-fold and 6-fold higher than moderate and low EGFR expressing cell lines, respectively. Clonogenic survival (CS) for MDA-MB-468 cells showed 111In-nimotuzumab-NLS to be 10-folds and 60-folds more potent than 111In-nimotuzumab and nimotuzumab, respectively. Moderate killing for TrR1 and MDA-MB-231 was observed. 111In-hEGF showed significantly higher cytotoxicity and 2-fold higher γ-H2AX foci integrated density/nuclear-area as compared to 111In-nimotuzumab-NLS. Preserved selectivity of 111In-nimotuzumab-NLS makes it an excellent drug for treating cancers.

No description available.

This work focuses on a simple template assisted approach for fabricating I-III-VI semiconductor nanowire arrays. Vertically aligned nanowires of p-CIS of controllable diameter and thickness are electrodeposited, from an acidic electrolyte solution, inside porous aluminum templates using a three electrode set up with saturated calomel electrode as the reference. AAO template over ITO-glass was used as starting template for the device fabrication. The deposited CIS is annealed at different temperatures in a reducing environment (95% Ar+ 5% H2) for 30 minutes. X-ray diffraction of the nanowires showed nanocrystalline cubic phase structures with a strong orientation in the <112> direction. The effective bandgap of the deposited CIS nanowires determined using the Near Infrared (NIR) Spectrometer was found to be 1.07eV. The type of CIS electrodeposited inside the porous alumina template is determined to be p-type from the Schottky diode obtained with ITO-CIS-Au structure. Schottky diodes were characterized and analyzed at room temperature.

No description available.

No description available.

The research presented in this dissertation explores the possibility of using colloidal indium tin oxide (ITO) nanoparticle solutions to direct write transparent conducting coatings (TCCs), as an alternative route for TCC fabrication. ITO nanoparticles with narrow size distribution of 5-7 nm were synthesized using a non-aqueous synthesis technique, and fabricated into films using spin coating on substrates made from glass and fused quartz. The as-coated films were very transparent (>95% transmittance), but highly resistive, with sheet resistances around 10¹³ Ω/sq . Pre-annealing plasma treatments were investigated in order to improve the electrical properties while avoiding high temperature treatments. Composite RIE treatment recipes consisting of alternating RIE treatments in O₂ plasma and in Ar plasma were able to reduce the sheet resistance of as spin coated ITO films by 4-5 orders of magnitude, from about 10¹³ Ω/sq in as-coated films to about 3 x 10⁸ Ω/sq without any annealing. Plasma treatment, in combination with annealing treatments were able to decrease the sheet resistance by 8-9 orders of magnitude down to almost 10 kΩ/sq , equivalent to bulk resistivity of ~0.67 Ω.cm. Investigation into effectiveness of various RIE parameters in removing residual organics and in reducing the sheet resistance of colloidal ITO films suggested that while reactive ion annealing (RIE) pressure is an important parameter; parameters like plasma power, number of alternating O₂-Ar RIE cycles were also effective in reducing the residual organic content. Impedance spectroscopy analysis of the colloidal ITO films indicated the dominance of the various interfaces, such as grain boundaries, insulating secondary phases, charge traps, and others in determining the observed electrical properties.

No description available.

No description available.

n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In2O3 and discuss temperature-dependent current-voltage characteristics of Pt/In2O3 in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.

This thesis is concerned with theoretical calculations of the properties of electronic bound states in semiconductor heterostructures. The complex band structure empirical pseudopotential method (EPM) is used as the foundation of the work. Spin orbit coupling and strain effects (due to lattice mismatch) are included in familiar ways, as is the transfer matrix method, allowing the study of arbitrarily configured heterostructures. These techniques are used to investigate the unusually deep InAs/AlSb conduction band well. The strong possibility of intraband transitions at electro magnetic wavelengths around 1.55µm is predicted, with corresponding enhanced momentum matrix elements and joint density of states over interband transitions. An InAs/GaSb/AlSb asymmetric well is investigated, paying particular attention to the bound states in the vicinity of the InAs/GaSb band overlap. The electron-like states are found to cross with heavy hole and anti-cross with light hole-like states, as a function of heterostructure dimension or applied electrostatic field. This is analogous to the hybridisation of states in the in-plane band structure, except that for zero in-plane wave vector there can be no appreciable hybridisation of electron and heavy hole states. A technique is described that has been developed to extract envelope functions from heterostructure wavefunctions calculated using the realistic complex band structure EPM approach. These envelope functions conform to Burt’s theory (M. G. Burt, J. Phys.: Condens. Matt. 4, 6651 (1992)) in that they are uniquely defined, continuous and smooth over all space. Comparisons with traditional effective mass envelope functions are made. The extracted envelope functions are used to demonstrate conclusively Burt's predictions (M. G. Burt, Superlatt. Mi- crostruct. 17, 335 (1995)) concerning the inadequacy of certain approximations for the calculation of interband dipole matrix elements and charge oscillation. Finally, the issue of k • p operator ordering is convincingly settled, in favour of 'ordered' over 'symmetrised' Hamiltonians, by comparison to EPM calculations, and using EPM derived k • p parameters.