The Science behind amorphous Chalcogenide materials opened up new technologies in the arena of Phase Change Memories. The Ovonic universal phase change memory is called universal because it can replace flash memory, DRAM and SRAM. These are not only basic computer memory devices but also are becoming the driving force for the ongoing revolutionary growth of cell phones and other mobile devices, which are in desperate need of memory providing higher density, faster speed and lower power consumption. In this thesis, compositional dependence of various properties of different chalcogenide glasses are investigated, to explore the possibility of their application in Phase Change Memories. Efforts are also made to understand the effect of rigidity and extended rigidity transition on the composition dependence of properties investigated. This thesis comprises of 9 chapters; a brief summary is given below. Chapter 1 deals with fundamental aspects of amorphous semiconductors with a particular reference to chalcogenide glasses. The advantages and applications of chalcogenide glasses are also described. Chapter 2 outlines preparation and characterization of the glasses investigated. The sample preparation and various experimental setup used in the present thesis work like Raman Scattering, Nanoindentation, Alternating Differential Scanning Calorimetry (ADSC), Photo-thermal Deflection Spectroscopy (PDS), Electrical Switching are summarized here. Chapter 3 deals with Micro-Raman studies in Ge15Te85-x Inx Glasses. Micro-Raman studies reveal that as-quenched Ge15Te85-xInx samples exhibit two prominent peaks, at 123 and 155 cm-1. In thermally annealed samples, the peaks at 120 cm-1 and 140 cm-1, which are due to crystalline Te, emerge as the strongest peaks. The Raman spectra of polished samples are similar to those of annealed samples, with strong peaks at 123 cm-1 and 141 cm-1. The spectra of lightly polished samples outside the thermally reversing window resemble those of thermally annealed samples; however, the spectra of glasses with compositions in the thermally reversing window resemble those of as-quenched samples. This observation confirms the earlier idea that compositions in the thermally reversing window are non-ageing and are more stable. Chapter 4 explains nanoindentation studies undertaken on Ge15Te85-xInx glasse (1 ≤ x ≤ 11). Nanoindentation studies on Ge15Te85-xInx glasses indicate that the hardness and elastic modulus of these glasses increase with indium concentration. While a pronounced plateau is seen in the elastic modulus in the composition range 3 ≤ x ≤ 7, the hardness exhibits a change in slope at compositions x = 3 and x = 7. Also, the density exhibits a broad maximum in this composition range. The observed changes in the mechanical properties and density are clearly associated with the thermally reversing window in Ge15Te85-xInx glasses in the composition range 3 ≤ x ≤ 7. In addition, a local minimum is seen in density and hardness around x = 9, the chemical threshold of the system. Chapter 5 deals with crystallization kinetics of Ge15Te85-xInx glasses. The crystallization kinetics of Ge15Te85Inx glasses have been studied by non-isothermal method. The composition dependence of Tg and Tc at different heating rates, is investigated. The activation energy of crystallization is calculated using the Kissinger’s plot. It is found that the composition dependence of the glass transition temperature, Tg and the crystallization temperature, Tc, the activation energy of crystallization, Ec, and the stability factor, (ΔT= Tc-Tg) exhibit specific signatures of intermediate phase in the composition rang 3 ≤ x ≤ 7 and Chemical Threshold at x = 9. Chapter 6 explains Alternating Differential Scanning Calorimetric and XRD studies on silver doped Ge15Te80In5 glasses. X-ray diffraction studies on quaternary Ge15Te80-xIn5Agx glasses (2 ≤ x ≤ 24) reveal the presence of Te, GeTe, Ag8GeTe6, AgTe, In2Te3 and In4Te3. Thermal studies on quaternary Ge15Te80-xIn5Agx glasses exhibit signatures of Intermediate Phase (IP) in the variation of Tg, ∆HNR and ∆Cp with Ag addition in the composition range 8 ≤ x ≤ 16. The composition x = 16 has been identified to be the Chemical Threshold (CT) based on the saturation of flexible Ag-Te bonds. Micro-Raman, molar volume, thermal diffusivity studies on Ge15Te80-xIn5Agx glasses reveal a clear evidence of intermediate phase in the composition range 8 ≤ x ≤ 16 as depicted in the ADSC studies. Chapter 7 deals with Micro-Raman studies on as-quenched Ge15Te80-xIn5Agx glasses reveal the presence of tetrahedral structural units. Further, the Raman peak positions are found to shift with silver addition. In addition, specific signatures of the Intermediate Phase (IP) are observed in the composition dependence of Raman frequencies and corresponding intensities of different modes in the composition range, 8 ≤ x ≤ 16. In thermally annealed samples, the observed Raman peaks can be attributed to crystalline tellurium and silver lattice vibrational modes; significant increase in intensity is observed at 93 and 141cm-1 with silver addition in annealed samples, suggesting an increase in silver lattice vibrational modes. Also, the compositional dependence of density, molar volume and thermal diffusivity confirms the presence of the intermediate phase. Chapter 8 contains the current-voltage characteristics and electrical switching behavior of Ge15Te80-xIn5Agx glasses. The glasses are found to exhibit memory type switching for 3mA current in the voltage range 70 -120 V, for a sample thickness 0.3 mm. But when the current is lowered to 1mA the samples exhibit threshold switching. The compositional studies indicate the presence of an intermediate phase in the composition range 8 ≤ x ≤ 16. SET-RESET studies have been carried out using a triangular pulse of 6 mA amplitude for SET and 21 mA amplitude for RESET for a sample thickness 0.3 mm. Raman studies on SET and RESET indicates SET state resemble annealed samples and RESET state resemble as-quenched samples. It is interesting to note that the samples in the intermediate phase, especially compositions at x =10, 12, 14 withstand more set-reset cycles. This indicates compositions in the intermediate phase are suitable for PCM devices. Chapter 9 summarizes the significant results obtained and explains the scope of this thesis.

Ce travail avait pour objectif de réaliser des couches minces de Zno co-dopées Cobalt et Indium en vue de la réalisation de cellules photovoltaïques. Pour la fabrication des couches minces, nous avons choisi la méthode de pulvérisation cathodique en radio fréquence. Cette méthode nous permet d'obtenir des couches ayant différentes propriétés qui dépendent des paramètres de dépôt. Les couches minces de CIZO obtenus sont recuites sous N2 et H2 pour la série 1 et O2 pour la série 2. Dans la première partie de ce travail, nous avons entrepris une étude des propriétés morphologiques, vibrationnelles et optiques.Dans la deuxième partie de ce travail, nous avons étudié l'effet de l'épaisseur et l'effet de recuit sous azote pour améliorer les différentes propriétés (structurales, morphologiques, optiques et électriques) de nos échantillons. Dans la troisième partie de ce travail, nous avons étudié l'influence de temps de recuite sur les différentes propriétés (structurales, morphologiques, optiques et électriques) de nos échantillons. / This work has a purpose to make thin layers of Zno co-dopees cobalt and indium for the production of photovoltaic cells. For the manufacture of thin layers, we have chosen the method of magnatron sputtring. This method allows we obtain layers having different properties which depend on parameters of deposition. Thick layers of cizo obtained are received inN2 and H2 for series 1 and O2 for series 2. In the first part of this work, we have undertaken a study of the morphological, vibrational and optical properties. In the second part of this work, we have experienced the effect of thickness and the effect of anneling on the different properties (structural, morphological, optical, and electrical) of our samples. In the third part of this work, we have investigated the influence of annealing time on the different properties (structural, morphological, optical and electrical) of our samples.

Naturgas är ett alternativ till oljebaserade bränslen. Ur ett miljöperspektiv är naturgasen fördelaktig eftersom den vid förbränning ger mindre utsläpp av miljöfarliga ämnen än olja. I en diesel dual-fuel motor används diesel och naturgas som bränsle. Naturgas består till största delen av metan. För att oskadliggöra den del av metangasen som inte förbränns i motorn krävs en avgaskatalysator som kan bryta ned det relativt stabila metanet vid låga temperaturer. Målet med det här kandidatexamensarbetet är att tillverka och testa tre olika avgaskatalysatorer för nedbrytning av metan. De tre katalysatorer som valdes för tillverkning och testning var Pd/Al2O3, Pd/SnO2 och In2O3/SnO2 (ITO). Valen baserade sig på att katalysatorerna som tillverkades skulle vara aktiva för nedbrytning av metan vid låga temperaturer. ITO sågs som en extra intressant kandidat eftersom In är billigare än ädelmetallen Pd. Pd/Al2O3 tillverkades med en kommersiell support och impregnering av Pd genom ”incipient wetness” (IW). Pd/SnO2 tillverkades på samma sätt. ITO tillverkades genom ”forward co-precipitation”. En monolit testades för varje katalysator. Vid ungefär 315 °C kunde 10 % omsättning av metan detekteras för alla tre katalysatorer. Pd/Al2O3 var den katalysator vars aktivitet förbättrades som mest då temperaturen ökade ytterligare. Katalysatorerna testades bara en gång. För att statistiskt säkerställa resultaten behöver upprepade tester göras. Resultaten överensstämmer delvis med tidigare studier. Slutsatsen av arbetet är att alla tre katalysatorer fungerar och att ITO skulle kunna vara en billigare men i övrigt likvärdig avgaskatalysator för en diesel dual-fuel lean burn motor vid 315 °C. Fler tester måste dock göras för att ta reda på om ITO verkligen är ett mer fördelaktigt alternativ.

Indiana University-Purdue University Indianapolis (IUPUI) / In this research thesis, copper indium gallium selenium (CIGS) nanoparticles were synthesized from metal chlorides, functionalized to disperse in water, and further used in layer by layer (LbL) nanoassembly of CIGS films. CIGS nanoparticles were synthesized through the colloidal precipitation in an organic solvent. The peak and average sizes of the synthesized particles were measured to be 68 nm and 75 nm in chloroform, and 30 nm and 115 nm in water, respectively. Two methods were used to disperse the particle in water. In the first method the stabilizing agent oleylamine (OLA) was removed through multiple cleaning processes, and in the second method ligand exchange was performed with polystyrene sulfonate (PSS). Zeta potential of CIGS nanoparticles dispersed in water was measured to be +61 mV. The surface charge of the nanoparticles was reversed by raising the pH of the solution, which was measured to be −43.3 mV at 10.5 pH. In a separate process, the CIGS nanoparticles dispersed in water were coated with PSS. The resulting dispersion was observed to be stable and the surface charge was measured to be −56.9 mV. The LbL deposition process of CIGS nanoparticles was characterized by depositing thin films on quartz crystal microbalance (QCM). LbL depositions was conducted using (i) oppositely charged CIGS nanoparticles, (ii) positively charged CIGS nanoparticles and PSS, and (iii) PSS-coated CIGS (CIGS-PSS) and polyethyleneimine (PEI). The average thickness of each bi-layer of the above mentioned depositions were measured to be 2.2 nm, 1.37 nm, and 10.12 nm, respectively. The results from the QCM have been observed to be consistent with the film thickness results obtained from atomic force microscopy (AFM). Various immersion times versus thickness of the film were also studied. For electrical characterization, the CIGS films were deposited on indium tindioxide (ITO)-coated glass substrates. Current versus voltage (I/V) measurements were carried out for each of the films using the Keithley semiconductor characterization instruments and micromanipulator probing station. It was observed that the conductivity of the films was increased with the deposition of each additional layer. The I/V characteristics were also measured under the light illumination and after annealing to study the photovoltaic and annealing effects. It was observed that under light illumination, the resistivity of a 12-layer CIGS film decreased by 93% to 0.54 MΩ.m, and that of the same number of layers of PSS-coated CIGS and PEI film decreased by 60% to 0.97 MΩ.m under illumination. The resistivity of an 8-layer CIGS and PSS film decreased by 76.4% to 0.1 MΩ.m, and that of the same layers of PSS-coated CIGS and PEI decreased by 87% to 0.07 MΩ.m after annealing. The functionalized nanoparticles and the LbL CIGS films were implemented in the solar cell devices. Several configurations of CIGS films (p-type), and ZnO and CdS films (n-type) were considered. Poly(3,4-ethylenedioxythiophene) (PEDOT), molybdenum (Mo), and ITO were used as back contacts and ITO was used as front contact for all the devices. The devices were characterized the Keithley semiconductor characterization instruments and micromanipulator probing station. For a CIGS and n-ZnO films device with PEDOT as back contact and ITO as front contact, the current density at 0 V and under light illumination was measured to be 60 nA/cm2 and the power density was measured to be 0.018 nW/cm2. For a CIGS and CdS films device with ITO as both back and front contact, the current density at 0 V and under light illumination was measured to be 50 nA/cm2 and the power density was measured to be 0.01 nW/cm2. For a drop-casted CIGS and CdS films device with Mo as back contact and ITO as front contact, the current density of 50 nA/cm2 at 0 V and power density of 0.5 nW/cm2 under light illumination was measured. For the LbL CIGS and chemical bath deposited CdS films device with ITO as both back and front contact, the current density of 0.04 mA/cm2 at 0 V and power density of 1.6 μW/cm2 under light illumination was measured. Comparing to Device-III, an increase by 99% in the power density was observed by using the CIGS LbL film in the device structure. The novel aspects of this research include, (i) functionalization of the CIGS nanoparticles to disperse in water including coating with PSS, (ii) electrostatic LbL deposition of CIGS films using oppositely charged nanoparticles and polymers, and (iii) the utilization of the fabricated LbL CIGS films to develop solar cells. In addition, the n-type cadmium sulfide film (CdS) and zinc oxide (ZnO) buffer layer were also deposited through LbL process after the respective particles were functionalized with PSS coating in separate experiments.

Systems that exhibit the extraordinary magnetoresistance (EMR) effect and other more disordered semiconductor-metal hybrid structures have been investigated numerically with the use of the finite element method (FEM). Initially, modelling focused on circular geometry EMR devices where a single metallic droplet is embedded concentrically into a larger semiconducting disk. The dependence of the magnetoresistance of such systems on the transverse magnetic field (0 5T) and filling factor (1/16 15/16) are reported and generally show a very good agreement with existing experimental data. The influence of the geometry of the conducting region of these EMR systems was then investigated. The EMR effect was found to be highly sensitive to the shape of the conducting region with a multi-branched geometry producing a four order of magnitude enhancement of the magnetoresistance over a circular geometry device of the same filling factor. Conformal mapping has previously been shown to transform a circular EMR device into an equivalent linear geometry. Such a linear EMR device has been modelled with the EMR mechanism clearly observed. The magnetoresistive response of a circular EMR device upon changes to: the mobility of the semiconducting region; the ratio of metal to semiconductor conductivity; and the introduction of a finite resistance at the semiconductor-metal interface, have also been investigated. In order for a large EMR effect to be observed the system requires: the semiconductor mobility to be large; the conductivity of the metal to be greater than two orders of magnitude larger than that of the semiconductor; and a very low interface resistance. This modelling procedure has been extended to include inhomogeneous semiconductor-metal hybrids with a more complex and disordered structure. Two models are presented, both based upon the random distribution of a small proportion of metal inside a semiconducting material. The resultant magnetoresistance in each case is found to have a quasi-linear dependence on magnetic field, similar to that observed in the silver chalcogenides.

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Chemisorption of an organic monolayer to tune the surface properties of a transparent conductive oxide (TCO) electrode can improve the performance of organic electronic devices that rely on efficient charge transfer between an organic active layer and a TCO contact. Here, a series of perylene diimides (PDIs) was synthesized and used to study relationships between monolayer structure/properties and electron transfer kinetics at PDI-modified indium-tin oxide (ITO) electrodes. In these PDI molecules, one of the imide substituents is a benzene ring bearing a phosphonic acid (PA) and the other is a bulky aryl group that is twisted out of the plane of the PDI core. The size of the bulky aryl group and the substitution of the benzene ring bearing the PA were both varied, which altered the extent of aggregation when these molecules were absorbed as monolayer films (MLs) on ITO, as revealed by both attenuated total reflectance (ATR) and total internal reflection fluorescence spectra. Polarized ATR measurements indicate that, in these MLs, the long axis of the PDI core is tilted at an angle of 33-42 degrees relative to the surface normal; the tilt angle increased as the degree of bulky substitution increased. Rate constants for electron transfer (k(s,opt)) between these redox-active modifiers and ITO were determined by potential-modulated ATR spectroscopy. As the degree of PDI aggregation was reduced, k(s,opt) declined, which is attributed to a reduction in the lateral electron self-exchange rate between adsorbed PDI molecules, as well as the heterogeneous conductivity of the ITO electrode surface. Photoelectrochemical measurements using a dissolved aluminum phthalocyanine as an electron donor showed that ITO modified with any of these PDIs is a more effective electron-collecting electrode than bare ITO.

O óxido de índio dopado com estanho é um semicondutor degenerado de alta transparência no espectro visível e alta condutância elétrica. Por suas propriedades, ele é utilizado como eletrodo transparente em diversas aplicações. Algumas destas aplicações exigem que os filmes sejam depositados sobre substratos poliméricos, que degradam em temperaturas acima de 100 °C. Por este motivo, métodos de deposição que utilizam baixas temperaturas são necessários. O objetivo deste trabalho é o desenvolvimento de técnicas de deposição de filmes de óxido de índio dopado com estanho, em baixas temperaturas (< 100 °C), pelo método de magnetron sputtering de rádio fequência. Filmes foram obtidos sobre substratos de silício, vidro e policarbonato, e suas propriedades físicas, elétricas, ópticas, químicas e estruturais foram analisadas por perfilometria, elipsometria, curvas corrente-tensão, prova de quatro pontas, medidas de efeito Hall, difratometria de raios-X e espectrofotometria. Filmes depositados sobre silício e vidro tiveram resistividade elétrica mínima da ordem de 10^-4 Ohm.cm, enquanto a resistividade do filme obtido sobre policarbonato foi da ordem de 10^-3 Ohm.cm. A transmitância óptica média no espectro visível das amostras variou de 66 a 87 %. Do ponto de vista estrutural, as amostras tenderam a apresentar fase amorfa e cristalina, com orientação preferencial ao longo da direção [100]. De modo geral, as amostras obtidas de 75 a 125 W tiveram as melhores propriedades para serem utilizadas em aplicações que exijam eletrodos transparentes, considerando aspectos elétricos e ópticos. / Indium-tin oxide is a degenerate semiconductor that shows high transmittance in the visible region of the spectrum and high electrical conductance. Because of its properties, this material is used as transparent electrode in a wide variety of applications. Some of these applications demand the indium-tin oxide layer to be deposited over polymer substrates, which degrade at temperatures above 100 °C. Because of this degradation problem, deposition methods at low temperatures are needed. The purpose of this work is the development of low temperature (< 100 °C) indium-tin oxide deposition processes by radio frequency magnetron sputtering method. Thin films were deposited over silicon, glass and polycarbonate substrates, and their physical, electrical, optical, chemical and structural properties were analyzed by surface high step meter, ellipsometry, current-voltage curves, four-point probe analysis, Hall effect measurements, X-ray diffractometry and spectrophotometry. Films deposited over silicon and glass substrates showed minimal electrical resistivity in the order of 10^-4 Ohm.cm, while the resistivity of the film obtained over polycarbonate was in the order of 10^-3 Ohm.cm. The average transmittance in the visible spectrum varied over the range 66 to 87 %. According to the structural study, the films present both amorphous and crystalline phases, with crystallites showing preferential orientation along the [100] direction. In general, films deposited with power varying over the range 75 to 125 W showed the best results to be applied as transparent electrodes, considering electrical and optical aspects.