Σκοπός της παρούσας διπλωματικής εργασίας είναι η μελέτη της επίδρασης της γωνίας πρόσπτωσης της ηλιακής ακτινοβολίας στη λειτουργία φωτοβολταϊκών κυττάρων, σε περιοχές μεσαίου γεωγραφικού πλάτους. Συγκεκριμένα μελετήθηκε η επίδραση της γωνίας αυτής στη λειτουργία δύο ΦΒ πλαισίων ενός μονοκρυσταλλικού πυριτίου (sc-Si) και ενός δισεληνοϊδιούχου χαλκού (CIS). Τα πλαίσια τοποθετήθηκαν σε ταράτσα κτηρίου του Τμήματος Ηλεκτρολόγων Μηχανικών και Τεχνολογίας υπολογιστών του Πανεπιστημίου Πατρών. Οι μετρήσεις ξεκίνησαν τον Οκτώβριο του 2009 και ολοκληρώθηκαν το Σεπτέμβριο του 2010. Τα ΦΒ πλαίσια είχαν νότιο προσανατολισμό δεδομένου ότι τοποθετήθηκαν σε τόπο του βόρειου ημισφαιρίου με γεωγραφικό πλάτος 38ο 32’ . Κατά την πειραματική διαδικασία οι μετρήσεις γίνονταν σε πολλαπλές κλίσεις κάθε φορά και για τα δύο πλαίσια . Μετρήθηκαν το ρεύμα βραχυκύκλωσης, η τάση ανοιχτοκυκλώσεως, η θερμοκρασία πλαισίου και η ηλιακή ακτινοβολία. Υπολογίστηκε ο βαθμός απόδοσης , ο συντελεστή ποιότητας και η γωνία πρόσπτωσης, ανά κλίση ΦΒ πλαισίου. Υλοποιήθηκε αλγόριθμος για τον θεωρητικό υπολογισμό της βέλτιστης γωνίας κλίσης έτσι ώστε η γωνία πρόσπτωσης να γίνεται ελάχιστη ανά χρονική στιγμή (μέγιστης παραγόμενης ενέργειας ) και έγινε σύγκριση της με τα πειραματικά αποτελέσματα. Διαπιστώσαμε πειραματικά την εξάρτηση της παραγόμενης ισχύος από την γωνία πρόσπτωσης της ηλιακής ακτινοβολίας . Επιπλέον μέσω της πειραματικής διαδικασίας υπολογίστηκε η βέλτιστη κλίση πλαισίων ανά εποχή για τόπους γεωγραφικού πλάτους ίδιου με τον τόπο των πειραματικών μετρήσεων . / -

Conselho Nacional de Desenvolvimento Científico e Tecnológico / In this work we describe the synthesis and characterization of the first indium and tellurium compounds in which tellurium shows metallic behavior towards indium. We have studied the coordination chemistry of indium and tellurium, in different oxidation states and in the presence of different ligands, in order to understand the interactions that occur between these species. Indium(III) halides - InX3 (X = Cl, Br) react with phenyltellurium(IV) trihalides - PhTeX3 (X = Cl, Br) and hard ligands such as OPPh3, 1,10-phenantroline and DMSO, to yield [InX2(OPPh3)4]+[PhTeX4]- (X = Br, 1; X = Cl, 2), [InBr2(1,10-phen)2]+[PhTeBr4]- (3) and [InBr2(DMSO)4]+[PhTeBr4]- (4). Differently, with soft ligands such as thioureas, the reduction reaction of Te(IV) to Te(II) is favored. When PhTeX3 is substituted by TeCl4 the Lewis acid character of In(III) prevails over the hard/soft relation between In and Te. This leads to the formation of a compound containing only In, [InCl2(OPPh3)4]+[InCl4]- (5). No reaction is observed between InX3 and Te(II) species with hard or soft ligands. The compound [InI2(DPPMO2)2]+[InI4]- (6) (DPPMO2 = bis(diphenylphosphine)methane dioxide), obtained from the reaction between InI3 and PhTeI phenyltellurium(II) iodide indicates that reaction between In(III) and Te(II) does not occur due to once more prevails the Lewis acid character of In(III) over the hard/soft relation between In and Te. / Neste trabalho estão descritas a síntese e a caracterização dos primeiros compostos envolvendo índio e telúrio nos quais o telúrio apresenta comportamento metálico frente ao índio. Foi desenvolvido um estudo da química de coordenação entre os elementos índio e telúrio em diferentes estados de oxidação, na presença de diferentes ligantes, com o intuito de compreender as interações que ocorrem entre esses elementos. Haletos de índio(III) InX3 (X = Cl, Br) reagem com haletos de feniltelúrio(IV) PhTeX3 (X = Cl, Br) na presença de ligantes duros como OPPh3, 1,10-fenantrolina e DMSO para gerar os compostos [InX2(OPPh3)4]+[PhTeX4]- (X = Br, 1; Cl, 2), [InBr2(1,10-phen)2]+[PhTeBr4]- (3) e [InBr2(DMSO)4]+[PhTeBr4]- (4). Porém, com ligantes macios como tiouréias, a reação de redução do Te(IV) para Te(II) é preferencial. Quando se substitui o PhTeX3 por TeCl4, prevalece o caráter ácido de Lewis do In(III) sobre a relação duro/macio entre In e Te, levando a formação do composto contendo apenas In, [InCl2(OPPh3)4]+[InCl4]- (5). Não é observada reação entre InX3 e espécies de Te(II) com ligantes duros ou macios. O composto [InI2(DPPMO2)2]+[InI4]- (6) (DPPMO2 = Bis(difenilfosfina)metanodióxido), obtido da reação entre InI3 e PhTeI iodeto de feniltelúrio(II) leva a crer que In(III) e Te(II) não reagem entre si pois novamente prevalece o caráter ácido de Lewis do In(III) sobre a relação duro/macio entre In e Te.

We investigate the electronic band structure of device relevant GaInNAs/GaAs multiple quantum wells (MQWs) and veitical-cavity surface-emitting laser (VCSEL) structures. We report photo-modulated reflectance (PR) studies under applied pressure and variable temperature that probe the influence of N-related states on the electronic structure of dilute nitrogen (N) III-V MQWs. The pressure and temperature dependence of the intersubband transitions within the MQWs is reduced by addition of N. By matching our experimental results with a theoretical model important predictions for the ground-state electron effective mass and conduction band offset as a function of N and pressure are made. We present results of angle- and temperature-dependent electro-reflectance (ER) measurements on a dilute-N GaInNAs VCSEL and show that these explain how the corresponding VCSEL device can operate over a such a wide range of temperatures. We argue that intrinsic properties of dilute-N QWs provide novel ways to design laser devices, especially in the crucial telecommunication range of wavelengths. We show how non-destructive ER and PR measurements can be used, in order to estimate the QW transition energy when it is coupled with the cavity mode (CM). The energy of the main exciton is determined by monitoring the amplitude and the phase of the PR spectra. The ER measurements are presented on the GaInNAs VCSEL described in the previous paragraph. Furthermore we present a growth characterisation study on a representative InGaAs/GaAs/AlAs/AlGaAs as-grown VCSEL structure, using PR spectroscopy as a function of position on a non-uniform wafer. We also show how temperature dependent PR and the appropriate lineshape model can be used to obtain a full picture of the relative movements between the gain and the CM over the full range of temperature. This information allows calculating the material gain in the temperature range of interest, independent from the effect of the CM and also provides an alternative method for characterising the growth, which can be applied to uniform wafers. PR and non-destructive ER can be used to identify regions suitable for fabrication into devices. For this reason modulation spectroscopy can be very useful for industry to reject wafers where good alignment between the CM and the QW does not occur and can thus save on the time consuming and expensive fabrication procedures.

An aim of this work is a research of a deposition process of indium tin oxide by plasma assisted methods. The thesis deals with plasma diagnostics, e.g. Langmuir probe diagnostics and optical emission spectroscopy, as well as describes experiments of film deposition including their diagnostics, e.g. absorption spectroscopy, X-ray diffractometry and atomic force microscopy.

150f. / Submitted by Ana Hilda Fonseca (anahilda@ufba.br) on 2013-04-01T15:55:02Z No. of bitstreams: 1 Tese final Danns Barbosa 08,02,11.pdf: 6113429 bytes, checksum: 69ec8ea24d6f9bf83f16a0221337ec76 (MD5) / Approved for entry into archive by Ana Hilda Fonseca(anahilda@ufba.br) on 2013-04-24T17:03:41Z (GMT) No. of bitstreams: 1 Tese final Danns Barbosa 08,02,11.pdf: 6113429 bytes, checksum: 69ec8ea24d6f9bf83f16a0221337ec76 (MD5) / Made available in DSpace on 2013-04-24T17:03:41Z (GMT). No. of bitstreams: 1 Tese final Danns Barbosa 08,02,11.pdf: 6113429 bytes, checksum: 69ec8ea24d6f9bf83f16a0221337ec76 (MD5) Previous issue date: 2011 / CAPES / O amplo uso de fertilizantes nitrogenados, bem como os sistemas de saneamento rudimentares e as atividades pecuárias, têm aumentado a contaminação das águas subterrâneas e, portanto, da água potável. Devido aos graves riscos das espécies nitrato para a saúde humana, tem sido dispensada muita atenção para o desenvolvimento de tecnologias para removê-las da água. Dessa forma, neste trabalho foram preparados catalisadores bimetálicos de paládio e estanho ou índio suportados em estireno-divinilbenzeno (Sty-DVB) sulfonado, a fim de desenvolver catalisadores eficientes para a remoção das espécies nitrato da água. O suporte foi sintetizado por polimerização em suspensão, enquanto os catalisadores bimetálicos foram preparados por dois métodos: impregnações sucessivas e redução catalítica. Foram obtidos catalisadores com 5% m/m de paládio e vários teores (0,5, 2 e 4% m/m) de estanho ou índio, que foram caracterizados por espectroscopia no infravermelho com transformada de Fourier, adsorção de nitrogênio, análise química elementar, difração de raios X, termogravimetria e microscopia eletrônica de varredura. Os catalisadores foram avaliados na redução das espécies de nitrato na água, na presença e na ausência de dióxido de carbono. Verificou-se que o suporte não adsorve nitrato, nitrito e amônia e não apresenta atividade na redução das espécies nitrato. Os catalisadores com índio foram mais ativos na redução de espécies nitrato, e menos seletivos a nitrogênio, do que os catalisadores com estanho. Além disso, os catalisadores com estanho e preparados por redução catalítica foram mais ativos do que aqueles preparados por impregnações sucessivas. Um comportamento inverso foi observado com os catalisadores contendo índio. Com a maioria das amostras, o dióxido de carbono aumentou a atividade, reduziu a seletividade a nitrito e aumentou a produção das espécies amônio. Os melhores desempenhos catalíticos foram apresentados pelas amostras 5%Pd2%Sn/Sty-DVB, (atividade=15,2 cmol. min-1.g-1; seletividade a nitrogênio = 98%) e 5%Pd0,5%In/Sty-DVB (atividade= 18,8 cmol.min-1.g-1; seletividade a nitrogênio = 89%), preparadas por impregnações sucessivas e redução catalítica , respectivamente. / Salvador

Investigations performed in order to understand the electronic and optoelectronic properties of field effect transistors based on few layers of 2D Copper Indium Selenide (CuIn7Se11) are reported. In general, field effect transistors (FETs), electric double layer field effect transistors (EDL-FETs), and photodetectors are crucial part of several electronics based applications such as tele-communication, bio-sensing, and opto-electronic industry. After the discovery of graphene, several 2D semiconductor materials like TMDs (MoS2, WS2, and MoSe2 etc.), group III-VI materials (InSe, GaSe, and SnS2 etc.) are being studied rigorously in order to develop them as components in next generation FETs. Traditionally, thin films of ternary system of Copper Indium Selenide have been extensively studied and used in optoelectronics industry as photoactive component in solar cells. Thus, it is expected that atomically thin 2D layered structure of Copper Indium Selenide can have optical properties that could potentially be more advantageous than its thin film counterpart and could find use for developing next generation nano devices with utility in opto/nano electronics. Field effect transistors were fabricated using few-layers of CuIn7Se11 flakes, which were mechanically exfoliated from bulk crystals grown using chemical vapor transport technique. Our FET transport characterization measurements indicate n-type behavior with electron field effect mobility µFE ≈ 36 cm^2 V^-1 s^-1 at room temperature when Silicon dioxide (SiO2) is used as a back gate. We found that in such back gated field effect transistor an on/off ratio of ~ 10^4 and a subthreshold swing ≈ 1 V/dec can be obtained. Our investigations further indicate that Electronic performance of these materials can be increased significantly when gated from top using an ionic liquid electrolyte [1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6)]. We found that electron field effect mobility µFE can be increased from ~ 3 cm^2 V^-1 s^-1 in SiO2 back gated device to ~ 18 cm^2 V^-1 s^-1 in top gated electrolyte devices. Similarly, subthreshold swing can be improved from ~ 30 V/dec to 0.2 V/dec and on/off ratio can be increased from 10^2 to 10^3 by using an electrolyte as a top gate. These FETs were also tested as phototransistors. Our photo-response characterization indicate photo-responsivity ~ 32 A/W with external quantum efficiency exceeding 10^3 % when excited with a 658 nm wavelength laser at room temperature. Our phototransistor also exhibit response times ~ tens of µs with specific detectivity (D*) values reaching ~ 10^12 Jones. The CuIn7Se11 phototransistor properties can be further tuned & enhanced by applying a back gate voltage along with increased source drain bias. For example, photo-responsivity can gain substantial improvement up to ~ 320 A/W upon application of a gate voltage (Vg = 30 V) and/or increased source-drain bias. The photo-responsivity exhibited by these photo detectors are at least an order of magnitude better than commercially available conventional Si based photo detectors coupled with response times that are orders of magnitude better than several other family of layered materials investigated so far. Further photocurrent generation mechanisms, effect of traps is discussed in detail.

xvi, 117 p. ; ill. (some col.) A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number. / High efficiency thin film solar cells have the potential for being a world energy solution because of their cost-effectiveness. Looking to the future of solar energy, there is the opportunity and challenge for thin film solar cells. The main theme of this research is to develop a detailed understanding of electronically active defect states and their role in limiting device performance in copper indium gallium diselenide (CIGS) solar cells. Metastability in the CIGS is a good tool to manipulate electronic defect density and thus identify its effect on the device performance. Especially, this approach keeps many device parameters constant, including the chemical composition, grain size, and interface layers. Understanding metastability is likely to lead to the improvement of CIGS solar cells. We observed systematic changes in CIGS device properties as a result of the metastable changes, such as increases in sub-bandgap defect densities and decreases in hole carrier mobilities. Metastable changes were characterized using high frequency admittance spectroscopy, drive-level capacitance profiling (DLCP), and current-voltage measurements. We found two distinctive capacitance steps in the high frequency admittance spectra that correspond to (1) the thermal activation of hole carriers into/out of acceptor defect and (2) a temperature-independent dielectric relaxation freeze-out process and an equivalent circuit analysis was employed to deduce the dielectric relaxation time. Finally, hole carrier mobility was deduced once hole carrier density was determined by DLCP method. We found that metastable defect creation in CIGS films can be made either by light-soaking or with forward bias current injection. The deep acceptor density and the hole carrier density were observed to increase in a 1:1 ratio, which seems to be consistent with the theoretical model of V Cu -V Se defect complex suggested by Lany and Zunger. Metastable defect creation kinetics follows a sub-linear power law in time and intensity. Numerical simulation using SCAPS-1D strongly supports a compensated donor- acceptor conversion model for the experimentally observed metastable changes in CIGS. This detailed numerical modeling yielded qualitative and quantitative agreement even for a specially fabricated bifacial CIGS solar cell. Finally, the influence of reduced hole carrier mobility and its role in limiting device performance was investigated. / Adviser: J. David Cohen

xx, 153 p. : ill. (some col.) A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number. / In the research area of Group 13 hydroxide clusters, progress is often hampered by difficult and inefficient synthetic procedures. This has greatly limited the numerous potential applications of Group 13 hydroxide compounds, many of which require large amounts of material. Most relevant to this dissertation is their application as precursors for high quality amorphous metal oxide thin films. Addressing this issue, this dissertation presents a series of Group 13 containing hydroxide compounds of general formula [M 13 (μ 3 -OH) 6 (μ-OH) 18 (H 2 O) 24 ](NO 3 ) 15 which are generated through an efficient, scalable synthetic procedure. Throughout this dissertation, the compounds are generally referred to by their metal content, i.e. [Ga 13 (μ 3 -OH) 6 (μ-OH) 18 (H 2 O) 24 ](NO 3 ) 15 is designated as Ga 13 . Chapter I reviews the literature of inorganic and ligand-supported Group 13 hydroxide compounds with the aim of identifying common structural trends in metal composition and coordinating ligands. This summary is limited to clusters of aluminum, gallium, and indium. Chapter II describes in detail the synthesis and characterization of one such cluster, Al 13 . Following this in Chapter III is the description of the first heterometallic Group 13 hydroxide compound, Ga 7 In 6 , which along with Ga 13 was used as a precursor material for metal oxide thin films in collaboration with Professor Doug Keszler at Oregon State University. Chapter IV describes a series of six Ga/In compounds, as well as two Al/In compounds. Included in this chapter is an analysis of the heat-induced decomposition properties of the Ga/In clusters. Understanding such thermal decomposition is particularly relevant for the use of these compounds as precursor materials, as an annealing step is used to condense the films. Chapter V addresses the potential for post-synthetic modification of the compounds through metal and ligand exchange reactions, an area that also addresses the issue of solution stability of the structures Chapter VI describes the synthesis and characterization of related Group 13 compounds, including two infinite chain structures and additional heterometallic compounds. Lastly, Chapter VII concludes this dissertation and discusses potential areas of future research. This dissertation includes co-authored material and previously published results. / Committee in charge: Victoria DeRose, Chairperson, Chemistry; Darren Johnson, Member, Chemistry; James Hutchison, Member, Chemistry; Michael Haley, Member, Chemistry; Raghuveer Parthasarathy, Outside Member, Physics

The effects of optical heating via infrared free carrier absorption on the electron magneto-transport properties of n-InSb at helium temperatures have been studied for the first time. Oscillatory photoconductivity (OPC) type structure is seen in the photon energy dependence of the transport properties. A C0₂ laser (hω = 115 to 135 meV) was used as the optical source. Concentrations between 1 x 10¹⁵ cm⁻³ and 2 x 10¹⁶ cm⁻³ were studied. The conclusions of this study are that the energy relaxation of high energy photoexcited electrons, generated by free carrier absorption of C0₂ laser radiation in degenerate n-InSb at liquid helium temperatures, is by emission of a maximum number of optical phonons, and that this relaxation mechanism produces OPC type structure in the photon energy dependence of the electron temperature of the conduction band electron gas. This structure is seen, therefore, in the transport properties of the sample, including the Shubnikovde Haas effect, the effective absorption coefficient, and the photoconductivity (mobility) response (lower concentrations only). In addition, the highest concentration studied, nₑ = ~2 x 10¹⁶ cm⁻³, sets an experimental lower limit on the concentration at which electron-electron scattering will become the dominant energy relaxation mechanism for the photoexcited electrons, since OPC effects were present in this sample.

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / The growth in the generation of electrical and electronic equipment waste (WEEE) has won global importance and cell phones are highlighted between these wastes because of short life cycle and its amounts of hazardous materials. In LCD screens, there is a mixture of indium tin oxide (ITO), typically tin oxide (10-20 %) and indium oxide (80-90 %). The indium (In) is a metal of relatively limited resources and has extensive use. Thus, this work aims to obtain an effective method for extraction of In from LCD screens of mobile phones. To this purpose, after manual separation of LCD screens followed by mechanical treatment, leaching at atmospheric pressure comparing the citric, malic and acetic acids, were carried out varying parameters like temperature, concentration of acid, solid:liquid ratio, volume peroxide hydrogen and reaction time. Therefore, the best conditions set out in the leaching at atmospheric pressure were used for extraction in supercritical CO2, where the employment of different temperatures and critical pressures were studied, in order to make the process faster and more efficient. The In concentration extracted in both cases was determined by atomic absorption (AAS). The extraction using 1M citric acid, 90 °C, 1:20 solid:liquid ratio with 5 % of the volume of H2O2 performed for 3 hours resulted in extraction of 76.5 % of In present in the LCD screens from obsolete cell phones. The leaching process using supercritical fluid in the presence of co-solvents, provided reduction in extraction time and higher percentage of metal extraction, reaching 90.2 % when were used 1 M citric acid, 80 °C, 1:20 ratio solid:liquid with 5 % v/v of H2O2, pressure of 150 bar and 30 minutes of process time. In order to transfer the obtained In in solution to a solid phase, the adsorption process was carried out with activated carbon and Spirulina as adsorbent, yielding removal 77.8 and 67.8 %, respectively. Thus, a new process for In recovery was developed, which in addition to reducing environmental pollution generated by the incorrect disposal of LCD screens of mobile phones and the employment of inorganic acids conventionally used, reduces the consumption of natural resources, making the promising process. / O crescimento na geração de resíduos de equipamentos elétricos e eletrônicos (REEE) tem ganhado importância mundial e, os telefones celulares ganham destaque entre esses resíduos pelo ciclo de vida curto e quantidade de materiais perigosos que possuem. Nas telas de LCD, presentes neste tipo de resíduo, há uma mistura de óxido de estanho (10-20 %) e índio (80-90 %), denominada ITO. O índio (In) é um metal de recursos relativamente limitados e que possui ampla utilização. Assim, o presente trabalho possui como objetivo a obtenção de um método eficaz para extração de In presente em telas de LCD de telefones celulares. Para tal, após a separação manual das telas de LCD seguido de processamento mecânico, foram realizadas lixiviações sob pressão atmosférica comparando os ácidos cítrico, málico e acético, variando parâmetros como temperatura, concentração de ácido, relação sólido:líquido, volume de peróxido de hidrogênio e tempo de reação. Logo, as melhores condições estabelecidas nas lixiviações sob pressão atmosférica foram utilizadas para extração de In com CO2 supercrítico, onde se estudou o emprego de diferentes temperaturas e pressões críticas, a fim de tornar o processo mais rápido e eficiente. A concentração de In extraída, em ambos os processos, foi determinada por absorção atômica (AAS). A extração a pressão atmosférica utilizando ácido cítrico a 1 M, 90 °C, razão sólido:líquido de 1:20, com 5 % do volume de H2O2 realizada durante 3 horas proporcionou a extração de 76,5 % de In das telas de LCD obtidas a partir de celulares obsoletos. O processo utilizando a lixiviação com fluido supercrítico, na presença de co-solventes, proporcionou redução no tempo de extração, além de maior percentual de extração do metal, chegando a 90,2 % de extração quando utilizado ácido cítrico a 1 M, 80 °C, razão sólido:líquido de 1:20, com 5 % do volume de H2O2, pressão de 150 bar e tempo de processo de 30 min. Visando a recuperação do In da fase aquosa obtida na lixiviação, realizou-se o processo de adsorção utilizando carvão ativado e Spirulina como adsorventes, obtendo-se remoção de 77,8 e 67,8 %, respectivamente. Assim, um novo processo de recuperação de In foi desenvolvido, que além de reduzir a poluição ambiental gerada pelo descarte incorreto de telas de LCD de telefones celulares e pelos ácidos inorgânicos convencionalmente utilizados, diminui o consumo de recursos naturais, tornando o processo promissor.