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1	Breakdown Characteristics in SiC and Improvement of PiN Diodes toward Ultrahigh-Voltage Applications / 超高耐圧応用を目指したSiCにおける絶縁破壊特性の基礎研究およびPiNダイオードの高性能化 Niwa, Hiroki 23 March 2016 (has links) 京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第19722号 / 工博第4177号 / 新制\|\|工\|\|1644(附属図書館) / 32758 / 京都大学大学院工学研究科電子工学専攻 / (主査)教授木本恒暢, 教授髙岡義寛, 教授山田啓文 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM Silicon Carbide Photodiode Impact ionization coefficients PiN diode Junction termination extension Merged-PiN-Schottky (MPS) diode 500
2	Implementation of high voltage Silicon Carbide rectifiers and switches / Conception et réalisation de composants unipolaires en Carbure de Silicium Berthou, Maxime 18 January 2012 (has links) Nous présentons dans ce document, notre étude de la conception et la réalisation de VMOS et de diodes Schottky et JBS en carbure de silicium. Ce travail nous a permis d'optimiser et de fabriquer des diodes utilisant une barrière Schottky en Tungsten de différentes tenues en tension entre 1,2kV et 9kV. De plus, notre étude du VMOS nous a permis d'identifier la totalité des problèmes auxquels nous faisons face. Ainsi, nous avons pu améliorer ces composants tout en essayant de nouveaux designs tels que le VIEMOS et l'intégration monolithique de capteurs de temperature et de courant. / In this document, we present ou study about the conception and realization of VMOS and Schottky and JBS Diodes on Silicon Carbide. This work allowed us optimize and fabricate diodes using Tungsten as Schottky barrier on both Schottky and JBS diodes of different blocking capability between 1.2kV and 9kV. Moreover, our study of the VMOS, by considering the overall fabrication process, has permitted to identify the totality of the problems we are facing. Thusly we could ameliorate the devices and try new designs as the VIEMOS or the monolithic integration of temperature and current sensors. Electronique de puissance Diode à barrière de Schottky Semiconducteur VMOS Haute tension Carbure de silicium Semiconducteur VDMOS Haute température Electronique de commutation Convertisseur de haute tension Convertisseur sous haute température Power Electronics Schottky Barrier Diode Silicon Carbide High temperature Electronic Commutation High Voltage Converter High Temperature Converter 621.317 072
3	Implementation of high voltage Silicon Carbide rectifiers and switches Berthou, Maxime 18 January 2012 (has links) (PDF) In this document, we present ou study about the conception and realization of VMOS and Schottky and JBS Diodes on Silicon Carbide. This work allowed us optimize and fabricate diodes using Tungsten as Schottky barrier on both Schottky and JBS diodes of different blocking capability between 1.2kV and 9kV. Moreover, our study of the VMOS, by considering the overall fabrication process, has permitted to identify the totality of the problems we are facing. Thusly we could ameliorate the devices and try new designs as the VIEMOS or the monolithic integration of temperature and current sensors. [SPI:OTHER] Engineering Sciences/Other Power Electronics Schottky Barrier Diode Silicon Carbide High temperature Electronic Commutation High Voltage Converter High Temperature Converter

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