This study investigates the accuracy and efficiency of several flux splitting methods for the compressible, two-dimensional Euler equations. Steger-Warming flux vector splitting method, Van Leer flux vector splitting method, The Advection Upstream Splitting Method (AUSM), Artificially Upstream Flux Vector Splitting Scheme (AUFS) and Roe&rsquo / s flux difference splitting schemes were implemented using the first- and second-order reconstruction methods. Limiter functions were embedded to the second-order reconstruction methods. The flux splitting methods are applied to subsonic, transonic and supersonic flows over NACA0012 airfoil, as well as subsonic, transonic and supersonic flows in a channel. The comparison of the obtained results with each other and the ones in the literature is presented. The advantages and disadvantages of each scheme among others are identified.

Šis darbas yra apie įrenginį, kuris siaurina garsinio signalo dinaminį diapazoną. Darbe lyginami automatinio stiprinimo reguliavimo metodai, bei jų taikymai pramoniniuose garso kompresoriuose. Ieškoma būdų šiuos įrenginius patobulinti. / This article is about apparatus that intentionally reduces the dynamic range of audio signals. The goal is to compare methods of automatic gain reduction, talk their implementation in industry standard hardware compressors and look for possible circuit modifications.

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Recently there have been numerous advances in the development of numerical algorithms to solve conservation laws. Even though the analytical theory (existence-uniqueness) is complete in the case of scalar conservation laws, there are many numerically robust methods for which the question of convergence and error estimates are still open. Usually high order schemes are constructed to be Total Variation Diminishing (TVD) which only guarantees convergence of such schemes to a weak solution. The standard approach in proving convergence to the entropy solution is to try to establish cell entropy inequalities. However, this typically requires additional non-homogeneous limitations on the numerical method, which reduces the modified scheme to first order when the mesh is refined. There are only a few results on the convergence which do not impose such limitations and all of them assume some smoothness on the initial data in addition to L^infinity bound. The Nessyahu-Tadmor (NT) scheme is a typical example of a high order scheme. It is a simple yet robust second order non-oscillatory scheme, which relies on a non-linear piecewise linear reconstruction. A standard reconstruction choice is based on the so-called minmod limiter which gives a maximum principle for the scheme. Unfortunately, this limiter reduces the reconstruction to first order at local extrema. Numerical evidence suggests that this limitation is not necessary. By using MAPR-like limiters, one can allow local nonlinear reconstructions which do not reduce to first order at local extrema. However, use of such limiters requires a new approach when trying to prove a maximum principle for the scheme. It is also well known that the NT scheme does not satisfy the so-called strict cell entropy inequalities, which is the main difficulty in proving convergence to the entropy solution. In this work, the NT scheme with MAPR-like limiters is considered. A maximum principle result for a conservation law with any Lipschitz flux and also with any k-monotone flux is proven. Using this result it is also proven that in the case of strictly convex flux, the NT scheme with a properly selected MAPR-like limiter satisfies an one-sided Lipschitz stability estimate. As a result, convergence to the unique entropy solution when the initial data satisfies the so-called one-sided Lipschitz condition is obtained. Finally, compensated compactness arguments are employed to prove that for any bounded initial data, the NT scheme based on a MAPR-like limiter converges strongly on compact sets to the unique entropy solution of the conservation law with a strictly convex flux.

The limiter is a commonly used device in communication receiving systems to remove the amplitude variations of the received signal, but it is usually observed that limiter degrades the envelope detection performance of a single tone. In this thesis, it is demonstrated that the limiter-generated third harmonic can be used to improve the envelope detection performance of a single tone over that of the linearly processed fundamental. Differences in the probability distributions of the limiter-generated harmonics cause differences in their detection probabilities, which lead to differences in the performance of subsequent envelope detection. Comparison of the envelope detection performance of the limiter-generated third harmonic and the input to the limiter shows a maximum detection probability gain of 1.12 and also error probability gain of 2.4 in linear scale, whereas the fundamental harmonic does not show any practically significant gain. The envelope detection performance of the vector sum of the limiter-generated fundamental and third harmonics is also evaluated. This combination provides better performance than do the individual harmonics, especially for a large clipping parameter of the limiter. The combined harmonics shows a maximum detetction probability gain of 1.15 and error probability gain of 14, over that of the envelope detection performance of a tone without limiter. It is also observed that the envelope detection performance of a tone with limiter-generated higher harmonics shows non-monotonic behaviour as functions of either noise or the limiter-clipping parameter, which is a signature of stochastic resonance. The theoretical results from earlier research on the envelope detection of a single tone embedded in additive white Gaussian noise, both with and without a limiter, are presented and shown to match our simulation results. In previous work when a limiter was used in the envelope detection of a single tone, only the envelope of the fundamental harmonic was considered under very specific conditions. By contrast we also take notice of the limiter-generated higher harmonics and obtain improved envelope detection performance in the detection of a single tone.

The development of monolithic microwave integrated circuits (MMICs) has enabled the expansion of multiple circuit elements on a single piece of semiconductor, enclosed in a package with connecting leads. Attributable to the widespread use of wireless circuits and sub-systems, MMICs meet stringent demands for smaller chip area, low loss and low cost. These require highly integrated MMICs with compact features. This thesis provides valuable insight into the design of compact multifunctional MMICs using three-dimensional (3-D) multilayer technology. The proposed technology offers compact, hence low-cost solutions, where all active and passive components are fabricated vertically on the same substrate and no expensive via hole or backside processing is required. The substrate used in this work contains pre-fabricated 0.5 µm pseudomorphic High Electron Mobility Transistor (pHEMT) GaAs active devices. The performances of the uncommitted and committed pHEMTs are compared in terms of their DC, small-signal and large-signal RF measurements and modelling results. Committed pHEMT refers to the pHEMT that is connected to multilayer circuit, whereas uncommitted pHEMT is not. The effect of integrating committed pHEMTs with multilayer passive components is studied and the suitability of the multilayer fabrication processing is assessed. Using this technology, two pHEMT Schottky diodes with 120 µm and 200 µm gate widths are designed, fabricated and extensively characterised by I-V, C-V and S-parameter measurements. The information gained from the measurements is then used to extract all unknown equivalent circuit model parameters using high-frequency on-wafer microwave probing. The measured results showed good agreement with the modelled ones over the frequency range up to 40 GHz. Preliminary demonstrations of the use of these pHEMT Schottky diodes in microwave limiter and detector circuit applications are also discussed, showing promising results. Finally, the implementation of 3-D multilayer technology is shown for the first time in single-pole single-throw (SPST) and single-pole double-throw (SPDT) switches design by utilising the pre-fabricated pHEMTs. The design and analysis of the switches are demonstrated first through simulation using TriQuint's Own Model - Level 3 (TOM3). Three optimised SPST and SPDT pHEMT switching circuits which can address applications ranging from L to X bands are successfully fabricated and tested. The performance of the pHEMT switches is comparable to those of the current state-of-the-art, while simultaneously offering compact circuits with the advantages of integration with other MMIC components. All works reported in this thesis should facilitate foundry design engineers towards further development of 3-D multilayer technology.

abstract: This dissertation presents a new hybrid fault current limiter (FCL) topology that is primarily intended to protect single-phase power equipment. It can however be extended to protect three phase systems but would need three devices to protect each individual phase. In comparison against the existing fault current limiter technology, the salient fea-tures of the proposed topology are: a) provides variable impedance that provides a 50% reduction in prospective fault current; b) near instantaneous response time which is with-in the first half cycle (1-4 ms); c) the use of semiconductor switches as the commutating switch which produces reduced leakage current, reduced losses, improved reliability, and a faster switch time (ns-µs); d) zero losses in steady-state operation; e) use of a Neodym-ium (NdFeB) permanent magnet as the limiting impedance which reduces size, cost, weight, eliminates DC biasing and cooling costs; f) use of Pulse Width Modulation (PWM) to control the magnitude of the fault current to a user's desired level. g) experi-mental test system is developed and tested to prove the concepts of the proposed FCL. This dissertation presents the proposed topology and its working principle backed up with numerical verifications, simulation results, and hardware implementation results. Conclu-sions and future work are also presented. / Dissertation/Thesis / Ph.D. Electrical Engineering 2013

Thesis: Elec. E., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 1976 / Bibliography: leaves 255-263. / by Dennis V. Marsicano. / Elec. E. / Elec. E. Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science

Semiconductor devices are widely used in the automotive industry, and they are key components of the inverter and the converter in an electric vehicle. Thus, the concern of protecting the inverter and the converter from damaging operation has been raised. The junction temperature is one of the main considerations. It is directly related to the inverter power loss and overheat which can lead to fatigue or even failures. Therefore, to protect the semiconductor device from thermal runaway and apply active thermal control, the junction temperature must be obtained.To derive the junction temperature of an Insulated-Gate Bipolar Transistor (IGBT) and a diode, an instant model is proposed.   The instant model updates the junction temperature at the PWM switching frequency (around 2-5 kHz in this thesis). Compared with the traditional algorithm which calculates the average temperature over one fundamental cycle, the instant algorithm can show the instant temperature swing.  A high power IGBT module, FF1200R12IE5 Infineon, is selected to verify the algorithm with temperature results from IPOSIM and Power HIL tests. The temperature deviations for different cases are below 6 ◦C and the relative errors are below 10 %.With an accurate estimation of the junction temperature, the current limit is set to avoid that average temperature, maximum temperature and temperature swing exceed their limits. The currentlimits are derived from the curve/ surface fitting method. / Halvledare används mycket i fordonsindustrin, och är viktiga komponenter i växelriktare i elektriska fordon. Vikten av att skydda växelriktarna från skadliga driftsförhållanden ökat. Övergångstempe- raturen hos halvledarna är en av de viktigaste parametern att beakta. Den är direkt relaterad till väx- elriktarens förluster, vilket kan leda till termisk utmattning, och i värsta fall haveri. För att skydda halvledarna från termisk rusning och tillämpa aktiv termisk styrning måste övergångstemperaturen kunna uppskattas.För att härleda övergångstemperaturen hos en Insulated-Gate-Bipolar Transistor (IGBT) och en diod föreslås en momentan modell. Den momentana modellen uppdaterar övergångstemperaturen vid PWM-frekvensen (cirka 2-5 kHz i denna avhandling). Jämfört med den traditionella algoritmen som beräknar medeltemperaturen under en grundtonscykel kan den momentana algoritmen visa den omedelbara temperatursvängningen. En IGBT-modul, Infineon FF1200R12IE5, valdes för att verifiera algoritmen mot resultat från simuleringar och mätningar. Temperaturavvikelserna för olika fall är under 6 ◦C och de relativa felen är under 10 %.Med en noggrann uppskattning av övergångstemperaturen kan strömgränsen ställas in för att undvika att medel- och maxtemperaturen och temperatursvängningenen överskrider sina gränser.Strömgränserna härleds genom kurv- och ytanpassning.